CN110504347A - 一种深紫外led封装支架 - Google Patents
一种深紫外led封装支架 Download PDFInfo
- Publication number
- CN110504347A CN110504347A CN201910872261.5A CN201910872261A CN110504347A CN 110504347 A CN110504347 A CN 110504347A CN 201910872261 A CN201910872261 A CN 201910872261A CN 110504347 A CN110504347 A CN 110504347A
- Authority
- CN
- China
- Prior art keywords
- box dam
- pedestal
- boss
- deep ultraviolet
- ultraviolet led
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 claims abstract description 34
- 239000011230 binding agent Substances 0.000 claims abstract description 14
- 239000000463 material Substances 0.000 claims description 9
- 229920001343 polytetrafluoroethylene Polymers 0.000 claims description 6
- 239000004810 polytetrafluoroethylene Substances 0.000 claims description 6
- 229910017083 AlN Inorganic materials 0.000 claims description 5
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 claims description 5
- 239000000919 ceramic Substances 0.000 claims description 5
- -1 polytetrafluoroethylene Polymers 0.000 claims description 3
- 239000003795 chemical substances by application Substances 0.000 claims description 2
- 238000009825 accumulation Methods 0.000 abstract description 3
- 230000003287 optical effect Effects 0.000 abstract description 3
- 238000006243 chemical reaction Methods 0.000 abstract description 2
- 230000009466 transformation Effects 0.000 abstract description 2
- 230000000694 effects Effects 0.000 description 4
- 239000004809 Teflon Substances 0.000 description 2
- 229920006362 Teflon® Polymers 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 238000004659 sterilization and disinfection Methods 0.000 description 2
- 238000005336 cracking Methods 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000001954 sterilising effect Effects 0.000 description 1
- 238000009281 ultraviolet germicidal irradiation Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/483—Containers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/54—Encapsulations having a particular shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/56—Materials, e.g. epoxy or silicone resin
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
- H01L33/60—Reflective elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
- H01L33/641—Heat extraction or cooling elements characterized by the materials
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
Abstract
一种深紫外LED封装支架，属于深紫外LED技术领域，解决现有深紫外LED电光转化效率低、芯片性能易受热量积聚影响、光功率低等技术问题。本发明采用的技术方案为：一种深紫外LED封装支架，包括底座、围坝和设在底座和围坝之间的粘结剂，其中：所述底座顶面中部设有凸台；所述围坝中部为中空结构，所述中空结构下部设有与凸台相配合的过孔，所述中空结构上部四周均为斜面；所述围坝设在底座上方，所述凸台顶部设在围坝的过孔中。本发明具有电光转化效率高、导热性能好、结构稳定等优点。
Description
技术领域
本发明属于深紫外LED技术领域，具体涉及一种深紫外LED封装支架。
背景技术
深紫外LED的应用非常广泛，如杀菌、消毒、水净化、医疗等。高功率的深紫外LED灯珠能达到更好的使用要求。但是深紫外LED电光转换效率很低，热量积聚影响芯片的性能，而且深紫外LED发出的紫外光很容易被吸收或阻挡,对光功率影响很大，所以需要高导热性能且有很好反射功能的支架。
发明内容
本发明的目的在于克服现有技术的缺点，提供一种深紫外LED封装支架，解决现有深紫外LED电光转化效率低、芯片性能易受热量积聚影响、光功率低等技术问题。
为解决上述技术问题，本发明采用的技术方案为：
一种深紫外LED封装支架，包括底座、围坝和设在底座和围坝之间的粘结剂，其中：
所述底座顶面中部设有凸台，所述底座顶面、凸台的四周设有粘结台面；
所述围坝中部为中空结构，所述中空结构下部设有与凸台相配合的过孔，所述中空结构上部四周均为斜面，所述中空结构上部尺寸大于中空结构下部尺寸；
所述围坝设在底座上方，所述凸台顶部设在围坝的过孔中，所述粘结剂设在围坝底面与底座粘结台面之间；所述围坝外边缘与底座外边缘平齐；
所述围坝与粘结剂结合的界面低于凸台顶面。
进一步，所述围坝的制作材料为聚四氟乙烯；底座制作材料为氮化铝陶瓷。
进一步，所述凸台根据深紫外LED芯片尺寸大小做成圆形或方形。
本发明中围坝与粘结剂结合的界面低于凸台顶面，使得深紫外线照射不到粘结剂上，粘结剂不会因紫外线作用发生黄化和开裂，可以保证围坝和底座的结合强度；围坝采用新型聚四氟乙烯材料，对深紫外光有很好的反射效果，而且不吸收紫外线，很大程度上保证深紫外芯片的出光；深紫外芯片侧面发出的光全部被斜面反射，达到更高的出光效果；底座采用氮化铝陶瓷制成，具有高导热特性。与现有技术相比，本发明具有电光转化效率高、导热性能好、结构稳定等优点。
附图说明
图1是本发明的俯视图；
图2是本发明的剖面结构示意图；
图3是本发明的分解状态示意图。
具体实施方式
下面结合附图和实施例对本发明作进一步说明。
如图1至图3所示，本实施例中一种深紫外LED封装支架，包括底座1、围坝2和设在底座1和围坝2之间的粘结剂3，其中：
所述底座1顶面中部设有凸台1-1，所述底座1顶面、凸台1-1的四周设有粘结台面1-2；
所述围坝2中部为中空结构，所述中空结构下部设有与凸台1-1相配合的过孔2-1，所述中空结构上部四周均为斜面2-2，所述中空结构上部尺寸大于中空结构下部尺寸；
所述围坝2设在底座1上方，所述凸台1-1顶部设在围坝2的过孔2-1中，所述粘结剂3设在围坝2底面与底座1粘结台面1-2之间，所述围坝2外边缘与底座1外边缘平齐；
所述围坝2与粘结剂3结合的界面低于凸台1-1顶面。
进一步，所述围坝2的制作材料为聚四氟乙烯；底座1制作材料为氮化铝陶瓷。
进一步，所述凸台1-1根据深紫外LED芯片尺寸大小做成圆形或方形。
本发明的使用过程：
使用时，将深紫外芯片放置在位于围坝2中部的凸台1-1顶面上，由于围坝2与粘结剂3结合的界面低于凸台1-1顶面，深紫外线照射不到粘结剂3上，不能对粘结剂3造成破坏，保证了围坝2和底座1之间的粘结强度；围坝2采用新型聚四氟乙烯材料，对深紫外光有很好的反射效果，而且不吸收紫外线，很大程度上保证深紫外芯片的出光，因此深紫外芯片发出的光全部被斜面2-2反射，具有更高的出光效果；底座1采用氮化铝陶瓷制成，具有高导热特性。
Claims (3)
1.一种深紫外LED封装支架，包括底座(1)、围坝(2)和设在底座(1)和围坝(2)之间的粘结剂(3)，其特征在于：
所述底座(1)顶面中部设有凸台(1-1)，所述底座(1)顶面、凸台(1-1)的四周设有粘结台面(1-2)；
所述围坝(2)中部为中空结构，所述中空结构下部设有与凸台(1-1)相配合的过孔(2-1)，所述中空结构上部四周均为斜面(2-2)，所述中空结构上部尺寸大于中空结构下部尺寸；
所述围坝(2)设在底座(1)上方，所述凸台(1-1)顶部设在围坝(2)的过孔(2-1)中，所述粘结剂(3)设在围坝(2)底面与底座(1)粘结台面(1-2)之间；所述围坝(2)外边缘与底座(1)外边缘平齐；
所述围坝(2)与粘结剂(3)结合的界面低于凸台(1-1)顶面。
2.根据权利要求1所述的一种深紫外LED封装支架，其特征在于：所述围坝(2)的制作材料为聚四氟乙烯；底座(1)制作材料为氮化铝陶瓷。
3.根据权利要求1所述的一种深紫外LED封装支架，其特征在于：所述凸台(1-1)根据深紫外LED芯片尺寸大小做成圆形或方形。
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910872261.5A CN110504347A (zh) | 2019-09-16 | 2019-09-16 | 一种深紫外led封装支架 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910872261.5A CN110504347A (zh) | 2019-09-16 | 2019-09-16 | 一种深紫外led封装支架 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN110504347A true CN110504347A (zh) | 2019-11-26 |
Family
ID=68591974
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201910872261.5A Pending CN110504347A (zh) | 2019-09-16 | 2019-09-16 | 一种深紫外led封装支架 |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN110504347A (zh) |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106328799A (zh) * | 2016-10-19 | 2017-01-11 | 青岛杰生电气有限公司 | 一种深紫外led封装支架 |
| US20170162767A1 (en) * | 2015-12-04 | 2017-06-08 | Industrial Technology Research Institute | Package structure of an ultraviolet light emitting diode |
| CN108231973A (zh) * | 2017-12-08 | 2018-06-29 | 开发晶照明（厦门）有限公司 | 封装支架 |
| CN109888079A (zh) * | 2019-01-22 | 2019-06-14 | 圆融光电科技股份有限公司 | 一种深紫外发光二极管封装 |
| CN210167379U (zh) * | 2019-09-16 | 2020-03-20 | 北京中科优唯科技有限公司 | 一种深紫外led封装支架 |
-
2019
- 2019-09-16 CN CN201910872261.5A patent/CN110504347A/zh active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20170162767A1 (en) * | 2015-12-04 | 2017-06-08 | Industrial Technology Research Institute | Package structure of an ultraviolet light emitting diode |
| CN106328799A (zh) * | 2016-10-19 | 2017-01-11 | 青岛杰生电气有限公司 | 一种深紫外led封装支架 |
| CN108231973A (zh) * | 2017-12-08 | 2018-06-29 | 开发晶照明（厦门）有限公司 | 封装支架 |
| CN109888079A (zh) * | 2019-01-22 | 2019-06-14 | 圆融光电科技股份有限公司 | 一种深紫外发光二极管封装 |
| CN210167379U (zh) * | 2019-09-16 | 2020-03-20 | 北京中科优唯科技有限公司 | 一种深紫外led封装支架 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| TWI619268B (zh) | 紫外光發光二極體的封裝結構 | |
| CN211605189U (zh) | 一种紫外led封装结构 | |
| CN101539250A (zh) | 一种大功率led灯 | |
| CN104534421A (zh) | 高光功率密度led光源模块 | |
| CN102903710A (zh) | 高光功率密度紫外线led固化光源及其制备方法 | |
| CN109817591A (zh) | 一种高功率密度igbt模块的双面水冷散热结构及加工工艺 | |
| CN110504347A (zh) | 一种深紫外led封装支架 | |
| CN102738375A (zh) | Led光源模组 | |
| CN201749868U (zh) | 一种液冷led封装器件 | |
| CN211907434U (zh) | 深紫外led流体杀菌模组 | |
| CN102354693B (zh) | 一种含有多个反射杯的面光源封装结构 | |
| CN102610737A (zh) | 一种大功率led散热装置 | |
| CN210167379U (zh) | 一种深紫外led封装支架 | |
| CN207320153U (zh) | 一种高功率密度紫外led封装模组 | |
| CN203167505U (zh) | 具散热功能的电子装置及其散热模块 | |
| CN109585633A (zh) | 一种led封装结构及led器件 | |
| CN102593093A (zh) | 双芯片在to-220封装中引线框架的结构 | |
| CN206236704U (zh) | Led倒装基板的结构 | |
| CN106898684A (zh) | 一种多芯片并串联uvled阵列式支架 | |
| CN203103348U (zh) | 具有cob基板结构的led灯源 | |
| CN103346243A (zh) | 承载散热板和远程荧光粉结构的led光源及其生产方法 | |
| CN205231044U (zh) | 一种风冷散热一体的uvled大功率封装模块 | |
| CN203774371U (zh) | 一种荧光透镜应用于大功率led的封装结构 | |
| CN206947336U (zh) | 小尺寸emc封装灯珠 | |
| CN201910442U (zh) | 紫外大功率led器件 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination |