CN110491852A - Bonding structure and preparation method thereof, display panel - Google Patents

Bonding structure and preparation method thereof, display panel Download PDF

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Publication number
CN110491852A
CN110491852A CN201910710976.0A CN201910710976A CN110491852A CN 110491852 A CN110491852 A CN 110491852A CN 201910710976 A CN201910710976 A CN 201910710976A CN 110491852 A CN110491852 A CN 110491852A
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China
Prior art keywords
electrode
substrate
groove
conducting particles
display panel
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CN201910710976.0A
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Chinese (zh)
Inventor
刘宇
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Wuhan China Star Optoelectronics Semiconductor Display Technology Co Ltd
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Wuhan China Star Optoelectronics Semiconductor Display Technology Co Ltd
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Application filed by Wuhan China Star Optoelectronics Semiconductor Display Technology Co Ltd filed Critical Wuhan China Star Optoelectronics Semiconductor Display Technology Co Ltd
Priority to CN201910710976.0A priority Critical patent/CN110491852A/en
Priority to PCT/CN2019/107515 priority patent/WO2021022642A1/en
Publication of CN110491852A publication Critical patent/CN110491852A/en
Pending legal-status Critical Current

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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/10Bump connectors ; Manufacturing methods related thereto
    • H01L24/15Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L24/17Structure, shape, material or disposition of the bump connectors after the connecting process of a plurality of bump connectors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/81Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/15Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/17Structure, shape, material or disposition of the bump connectors after the connecting process of a plurality of bump connectors
    • H01L2224/171Disposition
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/81Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • H01L2224/8112Aligning
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/81Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • H01L2224/812Applying energy for connecting
    • H01L2224/81201Compression bonding
    • H01L2224/81203Thermocompression bonding, e.g. diffusion bonding, pressure joining, thermocompression welding or solid-state welding

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Combinations Of Printed Boards (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Liquid Crystal (AREA)

Abstract

The present invention discloses a kind of bonding structure and preparation method thereof, display panel, the bonding structure includes: first substrate, equipped with multiple first grooves and multiple first electrodes, first electrode is set to one by one in the first groove and its thickness is less than or equal to the depth of the first groove;The second substrate is equipped with multiple second grooves and multiple second electrodes, and second electrode is set to one by one in the second groove and its thickness is less than or equal to the depth of the second groove;Anisotropy conductiving glue, including resin gel and the conducting particles being distributed in resin gel, resin gel is provided between first substrate and the second substrate, and conducting particles provides and conducts path between first electrode and second electrode.Bonding structure in the present invention and preparation method thereof, display panel, when can be avoided the electrode on first substrate and the second substrate and being electrically conducted by ACF, there is a situation where short circuits to occur for the electrode of opposite dislocation.

Description

Bonding structure and preparation method thereof, display panel
Technical field
The present invention relates to field of display technology, in particular to a kind of bonding structure and preparation method thereof, display panel.
Background technique
With the development of science and technology, display panel has penetrated into the every field of our work and life, made of Display terminal generates tremendous influence to our work and life, our work and life has be unable to do without display terminal, such as We connect the mobile phone used each other daily, the TV etc. that the computer used of handling official business, amusement use.
Display panel generally includes operating space and bonding area, in the bonding area, the IC chip of display panel (Integrated Circuit, IC) by ACF (Anisotropic Conductive Film, anisotropy conductiving glue) with Based on COP (Chip On PI, the encapsulation of polyimides flip), COF (Chip On Film, flip chip) or COG (Chip On Glass, glass flip chip encapsulation) technique panel electrode bonding.ACF is made of conducting particles and resin gel, conducting particles Usually conductive metal, the effect for the guiding path that electrifies, resin gel then play bonding invigoration effect.Ideal bonding the result is that Conducting particles is fully utilized, and is filled only in corresponding panel electrode and IC/COF/FPC (Flexible Printed Circuit, flexible circuit board) electrode between, upper/lower electrode is connected efficiently.
However, can be heated to ACF, pressure makes due to the cementitiousness for reaching resin gel during crimping Solid resin gel becomes rubbery state, the flowing dislocation of the fluxion strap moving conductive particle of rubbery state resin gel, so as to cause mistake The panel electrode of position and the electrode fault of IC/COF/FPC (Flexible Printed Circuit, flexible circuit board) are electrically led Lead to and short circuit occurs.
Summary of the invention
The object of the present invention is to provide a kind of bonding structures and preparation method thereof, display panel, to solve in the prior art Electrode fault caused by the conducting particles of ACF misplaces electrically conducts due to the problem of short circuit.
To reach above-mentioned purpose, the present invention provides a kind of bonding structure, and the bonding structure includes:
First substrate, is equipped with multiple first grooves and multiple first electrodes, and the first electrode is set to described first one by one In groove and its thickness is less than or equal to the depth of first groove;
The second substrate, is equipped with multiple second grooves and multiple second electrodes, and the second electrode is set to described second one by one In groove and its thickness is less than or equal to the depth of second groove;
Anisotropy conductiving glue, including resin gel and the conducting particles being distributed in the resin gel, the resin Gel is provided between the first substrate and the second substrate, and the conducting particles is provided between first electrode and second electrode Conduct path.
In one embodiment of the invention, the conducting particles be only arranged at the first groove aligned and the second groove it Between.
In one embodiment of the invention, the first groove and the second groove aligned is identical.
In one embodiment of the invention, the difference of the opening size of the first groove and the second groove that align is less than described The maximum radial dimension of conducting particles.
In one embodiment of the invention, the side for the first electrode that the cell wall of first groove is accommodated with it offsets It connects, the side for the second electrode that the cell wall of second groove is accommodated with it abuts against.
To reach above-mentioned purpose, the present invention additionally provides a kind of display panel, the display panel includes display unit, drives Moving cell and bonding structure described above, the display unit are connect with the first electrode, the driving unit and institute State second electrode connection.
In one embodiment of the invention, the first substrate includes display panel substrate, and the first electrode is located at the face The bonding area of plate substrate, the second substrate are ic core plate base or flexible printed circuit substrate.
To reach above-mentioned purpose, the present invention also provides a kind of preparation methods of bonding structure, which comprises
The first substrate with multiple first grooves and multiple first electrodes is provided, the first electrode is set to described one by one In first groove and its thickness is less than or equal to the depth of first groove;
The second substrate with multiple second grooves and multiple second electrodes is provided, the second electrode is set to described one by one In second groove and its thickness is less than or equal to the depth of second groove;
Anisotropy conductiving glue is coated on the first substrate, and covers first groove, the anisotropy Conducting resinl includes resin gel and the conducting particles that is distributed in resin gel;
The second substrate is placed in the anisotropy conductiving glue to coat, and makes the first electrode and described second Electrode is aligned one by one;
Hot pressing simultaneously solidifies the resin gel so that the conducting particles the first electrode and second electrode aligned it Between provide conduct path.
In one embodiment of the invention, while the step for executing the hot pressing and solidifying the resin gel, institute The method of stating includes:
Apply electric field make the conducting particles of the resin gel be only arranged at the first electrode aligned and second electrode it Between.
In one embodiment of the invention, the first substrate includes display panel substrate, and the first electrode is located at the face The bonding area of plate substrate, the second substrate be ic core plate base or flexible printed circuit substrate,
The step for anisotropy conductiving glue is coated on the first substrate, comprising:
Anisotropy conductiving glue is coated on to the bonding area of the first substrate.
Above-mentioned bonding structure and preparation method thereof, display panel, by the way that multiple first grooves are arranged in first substrate, and And first electrode is filled in every one first groove, multiple second grooves, and each second groove are set in the second substrate Interior to be filled with second electrode, the upper surface of first electrode is lower than or is parallel to first substrate, and the upper surface of second electrode is less than Or be parallel to the second substrate, to make first substrate and the second substrate when through ACF bonding, ACF be heated and apply pressure it Afterwards, since resin gel is flowable and conducting particles is driven to flow to two sides, between the first electrode and second electrode of sequence It cannot be continuously filled with conducting particles, and be filled with conducting particles between completely opposite first electrode and second electrode, from And the conducting particles in ACF just provides the path that conducts between opposite first electrode and second electrode, avoids when electricity When pole protrudes from substrate, the first electrode and second electrode of dislocation are connected by conducting particles and there is a situation where short circuits to occur.
Detailed description of the invention
Fig. 1 is the structural schematic diagram of ideal bonding structure in the prior art;
Fig. 2 is the structural schematic diagram of the bonding structure of conducting particles dislocation in the prior art;
Fig. 3 is the structural schematic diagram of an embodiment of bonding structure of the invention;
Fig. 4 is the structural schematic diagram of an embodiment of display panel of the invention;
Fig. 5 is the flow diagram of one embodiment of preparation method of bonding structure of the invention.
Main element symbol description
Display panel substrate 10 Panel electrode 11
IC circuit board 20 Driving electrodes 21
Conducting particles 30 Bonding structure 100
First substrate 40 The second substrate 50
First groove 41 First electrode 42
Second groove 51 Second electrode 52
Display unit 60 Driving unit 70
Display panel 200
Specific embodiment
The explanation of following embodiment is referred to the additional illustration, the particular implementation that can be used to implement to illustrate the present invention Example.The direction term that the present invention is previously mentioned, such as [on], [under], [preceding], [rear], [left side], [right side], [interior], [outer], [side] Deng being only the direction with reference to annexed drawings.Therefore, the direction term used be to illustrate and understand the present invention, rather than to The limitation present invention.The similar unit of structure is with being given the same reference numerals in the figure.
In order to make the objectives, technical solutions, and advantages of the present invention clearer, with reference to the accompanying drawings and embodiments, right The present invention is further elaborated.It should be appreciated that described herein, specific examples are only used to explain the present invention, not For limiting the present invention.In the absence of conflict, following each embodiments and its technical characteristic can be combined with each other.
Referring to Fig. 1, being the structural schematic diagram of bonding structure ideally in the prior art, including display panel substrate 10 and the panel electrode 11 on display panel substrate 10, panel electrode 11 protrude from the surface of display panel substrate 10;It further include IC 20 (or COF or FPC) and the driving electrodes 21 on IC20, while driving electrodes 21 also protrude from the surface of IC 20, IC 20 play conductive path by conducting particles 30 (usually metallic) of the ACF bonding in the bonding area of display panel substrate 10, ACF Diameter effect, so that 21 mutual conduction of panel electrode 11 and driving electrodes aligned.
Referring to Fig. 2, the structural schematic diagram of the bonding structure for conducting particles in the prior art dislocation.Because using ACF When carrying out bonding, ACF can be heated, ACF includes conducting particles 30 and resin gel, and heating pressure makes solid resin gel Become rubbery state, rubbery state resin flows the flowing that will drive conducting particles 30, makes the conductive particle originally between the two electrode Son 30 is squeezed into electrode gap, and resin gel is restored by rubbery state to solid-state when restoring room temperature, and conducting particles position is no longer It changes, the panel electrode 11 of dislocation and driving electrodes 21 is connected, causes short circuit.
Therefore, the present invention provides the bonding structure after a kind of improvement, to solve the electrode of display panel substrate in the prior art The technical problem that short circuit occurs easily is connected by ACF conducting particles with the IC/COF/FPC electrode of dislocation.
Referring to Fig. 3, the structural schematic diagram of the embodiment for bonding structure 100 of the invention, including first substrate 40 With the second substrate 50.Wherein:
Multiple first grooves 41 and multiple first electrodes 42 are equipped in first substrate 40, first electrode 42 is set to described one by one In first groove 41, i.e., a first electrode 42 is correspondingly provided in each first groove 41.
Multiple second grooves 51 and multiple second electrodes 52 are equipped in the second substrate 50, second electrode 52 is set to described one by one In second groove 51, i.e., a second electrode 52 is correspondingly provided in each second groove 51.
In the present embodiment, the thickness of first electrode 42 is equal to the depth of the first groove 41, the i.e. upper table of first electrode 42 Face and the upper surface of the first groove 41 are at the same level.Likewise, depth of the thickness of second electrode 52 equal to the second groove 51, second The upper surface of electrode 52 and the upper surface of the second groove 51 are at the same level.Anisotropy between first substrate 40 and the second substrate 50 The conducting of first electrode 42 and second electrode 52 may be implemented in conducting particles 30 in conducting resinl.
For example, referring to Fig. 3, two adjacent first electrode 42a on first substrate 40 and first electrode 42b, second Two electrodes opposite with first electrode 42b with two first electrode 42a on first substrate 40 are respectively second on substrate 50 Electrode 52a and second electrode 52b.When filling anisotropy conductiving glue between first substrate 40 and the second substrate 50, to each After anisotropy conducting resinl is heated and pressed, resin gel is in flowable state, and conducting particles 30 is driven to transport to two sides Dynamic, due to the upper surface of first electrode 42a and first electrode 42b and first substrate 40 maintains an equal level and the electricity of second electrode 52a and second The upper surface of pole 52b and the second substrate 50 maintain an equal level, resin gel and conducting particles 30 not will receive the obstruction of electrode and can be smoothly Moved to two sides, make between the first electrode 42a and second electrode 52b of dislocation and first electrode 42b and second electrode 52a it Between cannot link up filled with conducting particles 30, and between opposite first electrode 42a and second electrode 52a and first electrode Conducting particles 30 is filled between 42b and second electrode 52b, to realize that conducting particles 30 is provided on opposite first substrate 40 First electrode 42 and the second substrate 50 on second electrode 52 between conduct path, be not in the comparative electrode of dislocation Between conducting happen.
That is, when first substrate 40 and the second substrate 50 are in opposite state, and first substrate 40 and the second base When plate 50 has certain distance (between be provided with anisotropy conductiving glue), first electrode 42 in first substrate 40 only can be with the Second electrode 52 aligned therewith is connected in two substrates 50, without with the second electrode 52 that is misaligned therewith in the second substrate 50 It connects, thus the case where avoiding dislocation electrode conduction.
On aforementioned base, to the ACF heating particulates between first substrate 40 and the second substrate 50 and after applying pressure, It is in electrical contact conducting particles 30 and first electrode 42 and second electrode 52 in ACF, it can be by first substrate 40 and Apply voltage between two substrates 50, under the tractive force effect of voltage, is provided only on conducting particles 30 in ACF and aligns Between first groove 41 and the second groove 51, to realize the first electrode 42 and the second groove in the first groove 41 aligned The mutual conduction between second electrode 52 in 51 will not generate the conducting phenomenon of dislocation electrode.
In other embodiments, the thickness of first electrode 42 can less than the depth of the first groove 41, second electrode 52 Thickness might be less that the depth of the second groove 51.Conduction when first substrate 40 and the second substrate 50 carry out bonding, in ACF Particle 30 can be partially housed in the first groove 41 and the second groove 51, and realize leading for first electrode 42 and second electrode 52 It is logical.It is also noteworthy that first electrode 42 in first substrate 40 only can be in the second substrate 50 aligned therewith second Electrode 42 is connected, without connecting with the second electrode 42 being misaligned therewith in the second substrate 50, so that dislocation electrode be avoided to lead Logical situation.
Further, when specific setting, the first groove 41 of first substrate 40 and 51 phase of the second groove of the second substrate 50 Together namely the width and depth of the first groove 41 of first substrate 40 and the second groove 51 of the second substrate 50 are all the same, pass through The setting of identical groove is arranged the conducting particles 30 of ACF only in alignment between the first groove 41 and the second groove 42, not only It is convenient to form the groove of the two, using one set of die, meanwhile, when being also convenient to the filling conducting particles 30 of filling ACF Operation.
In other embodiments, the size of the first groove 41 and the second groove 51 that align can be inconsistent, but phase The difference of the opening size of the first groove 41 and the second groove 51 of alignment is less than the maximum radial dimension of conducting particles 30, Ye Ji The quantity of determining conducting particles 30 is equipped between the first groove 41 and the second groove 51 aligned, conducting particles 30 will not be more For two staggered electrodes of substrate above and below between two electrodes being separated by same substrate, avoiding the occurrence of by conducting particles 30 It is connected and short circuit occurs.
Further, when filling respective electrode inside 41 the inside of the first groove and the second groove 51, the first groove The side for the first electrode 42 that 41 cell wall is accommodated with it abuts against, the cell wall of the second groove 51 and its second electricity accommodated The side of pole 52 abuts against.Namely first filled by respective electrode in groove 41 and the second groove 51 it is full, in height and wide It is filled full on degree, does not interspace inside slot.The design method, the conducting particles 30 for avoiding ACF are fallen in slot, Keep the arrangement of conducting particles 30 not easy to control.
Above-mentioned bonding structure, by the way that multiple first grooves 41, and every one first groove 41 are arranged in first substrate 40 It is interior to be filled with first electrode 42, multiple second grooves 51, and filling in each second groove 51 are set in the second substrate 50 There is second electrode 52, the upper surface of first electrode 42 is lower than or is parallel to first substrate 40, and the upper surface of second electrode 52 is low In or be parallel to the second substrate 50, to make first substrate 40 and the second substrate 50 when through ACF bonding, ACF is heated and applies After plus-pressure, since resin gel is flowable and conducting particles 30 is driven to flow to two sides, 42 He of first electrode of sequence Cannot continuously be filled with conducting particles 30 between second electrode 52, and completely opposite first electrode 42 and second electrode 52 it Between be filled with conducting particles 30, so that the conducting particles 30 in ACF just provides opposite first electrode 42 and second electrode 52 Between conduct path, avoid when electrode protrudes from substrate, the first electrode 42 and second electrode 52 of dislocation are conductive Particle 30 is connected and there is a situation where short circuits to occur.
It should be pointed out that the bonding structure in the present embodiment can be applied in display panel, display panel can be with For panel of LCD, Field Emission Display panel, plasm display panel, Organic Light Emitting Diode (OLED) display The organic luminous panel of device or any suitable display device panel.This display panel include viewing area (namely operation Area) and bonding area, bonding area is equipped with first electrode 41 and second electrode 52 passes through the conducting particles 30 of ACF and is conducted.
Below to be described for being suitable for the application scenarios of display panel.
Referring to Fig. 4, the structural schematic diagram of the embodiment for display panel 200 of the invention, including display unit 60, Driving unit 70 and above-mentioned bonding structure 100, display unit 60 and first electrode 42 are electrically connected, driving unit 70 and the Two electrodes 52 are electrically connected.
Specifically, first substrate 40 includes display panel substrate 43, and the first electrode 42 is located at the nation of the display panel substrate 43 Determine area, the second substrate 50 can be IC chip substrate (such as IC) or flexible printed circuit substrate (such as COF or FPC).Its Middle display panel substrate 43 can be sub- for glass or poly terephthalic acid class film (PET film) or cyclo-olefin-polymer films (COP film) or polyamides The materials such as amine film (PI film) are made.
When actual production, bonding area is set at the frame of touch screen or display screen.First substrate 40 includes display panel substrate 43 With the display unit being set on display panel substrate 43, display panel substrate 33 is equipped with bonding area, and first electrode 42 is set in bonding area, and First electrode 42 and display unit are electrically connected.Specifically, first electrode 42 may include the first metal layer, second metal layer with Third metal layer.The metal material of the first metal layer and third metal layer uses the material with preferable corrosion resistance Material, and the preferable material of second metal layer electric conductivity.As the metal material of the first metal layer and third metal layer can be adopted With molybdenum, nickel, palladium, cobalt, tungsten, rhodium, titanium, chromium, gold, silver, platinum etc., gold, silver, copper, aluminium, iron is can be used in the metal material of second metal layer Deng.Need to have the good of good combination and metal lead wire between second metal layer and the first metal layer, third metal layer Electric conductivity, can be used the three-layer metal structure of molybdenum, aluminium, the three-layer metal structure of molybdenum or nickel, copper, nickel, molybdenum, copper, three layers of molybdenum The three-layer metal structure of metal structure or nickel, aluminium, nickel.By three layers of metallic conduction structure of setting, first electrode is avoided 32 corrosion-vulnerable problems, and also guarantee to have good conductive property.
The second substrate 50 can be the electrode of IC or COF or FPC.COF is the flexible circuit after IC is fixed on FPC Plate, can also free bend, the bonding process of COF reduces the lower frame of display screen, used in the display screen for being suitble to large screen Technique.After IC is potted directly on FPC by COF, since FPC can be folded to glass back with free bend, from And realize the purpose for reducing lower frame.IC or COF or FPC make electrode when, groove need to be set on IC or COF or FPC, Electrode is filled in groove again, finally carries out bonding with the first electrode 42 of first substrate 40 again.
Above-mentioned display panel 200, by the way that bonding is arranged between the display unit 60 and driving unit 70 of display panel 200 Structure 100, the first electrode 42 of the first substrate 40 of bonding structure 100 are set in the first groove 41 of first substrate 40, the The second electrode 52 of two substrates 50 is set in the second groove 51 of the second substrate 50, thus the first electrode of bonding structure 100 When passing through ACF bonding between 42 and second electrode 52, the conducting particles in ACF just provides the under the effect of voltage tractive force Path is conducted between one electrode 42 and second electrode 52, is not in that the electrode of the dislocation of two substrates is led by conducting particles Situation that is logical and that short circuit occur occurs.
Referring to Fig. 5, the flow diagram of the embodiment for the preparation method of bonding structure of the invention, including step S31 to S35.
S31, provides the first substrate with multiple first grooves and multiple first electrodes, and the first electrode is set to one by one In first groove and its thickness is less than or equal to the depth of first groove.
Wherein, first substrate may include display panel substrate, and first electrode is located at the bonding area of display panel substrate.Display panel substrate Material can be for by glass or poly terephthalic acid class film (PET film) or cyclo-olefin-polymer films (COP film) or polyimide film Materials such as (PI films) are made.Display unit is additionally provided on display panel substrate, bonding area is located at the side of display unit, and shows single Member is electrically connected with first electrode.
After first groove is set on the first substrate, a first electrode is correspondingly arranged in each groove.Specific setting When, the thickness of first electrode can be less than or equal to the depth of the first groove.
S32, provides the second substrate with multiple second grooves and multiple second electrodes, and the second electrode is set to one by one In second groove and its thickness is less than or equal to the depth of second groove.
Wherein, the second substrate is IC chip (IC) substrate or flexible printed circuit substrate (including FPC and by IC COF substrate of the bonding after FPC).It is recessed that multiple second are arranged on ic core plate base or flexible printed circuit substrate After slot, it is correspondingly provided with a second electrode in every one second groove, specifically when setting, the thickness of second electrode can be less than or wait In the depth of the second groove.
Anisotropy conductiving glue is coated on the first substrate by S33, and covers first groove, it is described respectively to Anisotropic conductive adhesive includes resin gel and the conducting particles that is distributed in resin gel.
After the completion of above-mentioned two step, this step will carry out bonding to first substrate and the second substrate.Specific bonding When, anisotropy conductiving glue is coated on the first substrate, and cover first groove.
Further, first substrate includes display panel substrate, and first electrode is located at the bonding area of the display panel substrate, the second base Plate is ic core plate base or flexible printed circuit substrate.And anisotropy conductiving glue is coated on the first substrate Bonding area.
Anisotropy conductiving glue includes resin gel and the conducting particles that is distributed in resin gel.Resin gel includes heat Plastic resin and thermosetting resin two major classes.Thermoplastic resin mainly has by thermal softening, the performance of hardening by cooling, and repeats It is repeatedly unaffected, but have the shortcomings that high thermal expansivity and high-hygroscopicity simultaneously, it is under high temperature and easily deteriorates, can not meet Reliability, the demand of reliability.And thermosetting resin such as epoxy resin (Epoxy), polyimides (Polyimide) etc., then have There is high temperatrue stability and the advantages such as thermal expansivity and hygroscopicity are low, but processing temperature is high and is not easy heavy industry as its disadvantage, but comprehensive For the advantages of its reliability is high be still current to use most extensive material.Conducting particles is usually conductive metal powder, can also Think high molecule plastic ball surface coating metal powder both.The common metal used include powder nickel (Ni), golden (Au), on nickel Plate the metals such as gold, silver and tin alloy.
The second substrate is placed in the anisotropy conductiving glue and coated by S34, and makes the first electrode and described Second electrode is aligned one by one.
After completion above-mentioned steps coat anisotropy conductiving glue on the first substrate, in this step, by the second substrate It is placed in the anisotropy conductiving glue to coat, and makes a first electrode and two electrodes one by one as alignment, so that Path is conducted by the offer of corresponding ACF conducting particles between each first electrode aligned and second electrode.
S35, hot pressing simultaneously solidify the resin gel, so that the conducting particles is in the first electrode aligned and the second electricity It is provided between pole and conducts path.
Resin gel is in solid-state, in order to reach the cementitiousness of resin gel, can ACF be heated and be pressed, made Solid resin gel becomes rubbery state.Apply voltage simultaneously, under the tractive force effect of voltage, makes leading in the resin gel Charged particle is only arranged between the first electrode and second electrode aligned, and the first electrode and the second substrate of first substrate are adjacent Second electrode between be not present conducting particles so that the conducting particles is between the first electrode and second electrode aligned Offer conducts path, while avoiding the electrode of dislocation from being conducted by conducting particles and occurring there is a situation where short-circuit.
The preparation method of above-mentioned bonding structure, by the way that multiple first grooves, and every one first are arranged in first substrate It is filled with first electrode in groove, multiple second grooves are set in the second substrate, and filled with the in each second groove The upper surface of two electrodes, first electrode is lower than or is parallel to first substrate, and the upper surface of second electrode is less than or is parallel to Two electrodes, to make first substrate and the second substrate when through ACF bonding, the conducting particles in ACF is under the action of voltage It just provides between first electrode and second electrode and conducts path, avoid when electrode protrudes from substrate, the of dislocation One electrode and second electrode are connected by conducting particles and short circuit occur.
Each technical characteristic of embodiment described above can be combined arbitrarily, for simplicity of description, not to above-mentioned reality It applies all possible combination of each technical characteristic in example to be all described, as long as however, the combination of these technical characteristics is not deposited In contradiction, all should be considered as described in this specification.
The several embodiments of the application above described embodiment only expresses, the description thereof is more specific and detailed, but simultaneously It cannot therefore be construed as limiting the scope of the patent.It should be pointed out that coming for those of ordinary skill in the art It says, without departing from the concept of this application, various modifications and improvements can be made, these belong to the protection of the application Range.Therefore, the scope of protection shall be subject to the appended claims for the application patent.

Claims (10)

1. a kind of bonding structure, which is characterized in that the bonding structure includes:
First substrate, is equipped with multiple first grooves and multiple first electrodes, and the first electrode is set to first groove one by one Interior and its thickness is less than or equal to the depth of first groove;
The second substrate, is equipped with multiple second grooves and multiple second electrodes, and the second electrode is set to second groove one by one Interior and its thickness is less than or equal to the depth of second groove;
Anisotropy conductiving glue, including resin gel and the conducting particles being distributed in the resin gel, the resin gel It provides between the first substrate and the second substrate, the conducting particles provides the conductance between first electrode and second electrode Path.
2. bonding structure according to claim 1, which is characterized in that the conducting particles is only arranged at first aligned Between groove and the second groove.
3. bonding structure according to claim 1, which is characterized in that the first groove and the second groove aligned is identical.
4. bonding structure according to claim 1, which is characterized in that the opening of the first groove and the second groove that align The difference of size is less than the maximum radial dimension of the conducting particles.
5. bonding structure according to claim 1, which is characterized in that the cell wall of first groove and its accommodated the The side of one electrode abuts against, and the side for the second electrode that the cell wall of second groove is accommodated with it abuts against.
6. a kind of display panel, which is characterized in that the display panel includes display unit, driving unit and claim 1 ~5 described in any item bonding structures, the display unit are connect with the first electrode, the driving unit and described second Electrode connection.
7. display panel according to claim 6, which is characterized in that the first substrate includes display panel substrate, and described One electrode is located at the bonding area of the display panel substrate, and the second substrate is ic core plate base or flexible print circuit base Plate.
8. a kind of preparation method of bonding structure, which is characterized in that the described method includes:
The first substrate with multiple first grooves and multiple first electrodes is provided, the first electrode is set to described first one by one In groove and its thickness is less than or equal to the depth of first groove;
The second substrate with multiple second grooves and multiple second electrodes is provided, the second electrode is set to described second one by one In groove and its thickness is less than or equal to the depth of second groove;
Anisotropy conductiving glue is coated on the first substrate, and covers first groove, the anisotropic conductive Glue includes resin gel and the conducting particles that is distributed in resin gel;
The second substrate is placed in the anisotropy conductiving glue to coat, and makes the first electrode and the second electrode It is aligned one by one;
Hot pressing simultaneously solidifies the resin gel, conducts so that the conducting particles provides between the first electrode and the second electrode Path.
9. the preparation method of bonding structure according to claim 8, which is characterized in that execute described in the hot pressing and solidification While the step for resin gel, which comprises
Applying electric field is only arranged at the conducting particles in the resin gel between the first electrode and second electrode aligned.
10. the preparation method of bonding structure according to claim 8, which is characterized in that the first substrate includes panel Substrate, the first electrode are located at the bonding area of the display panel substrate, and the second substrate is ic core plate base or soft Property printed circuit board,
The step for anisotropy conductiving glue is coated on the first substrate, comprising:
Anisotropy conductiving glue is coated on to the bonding area of the first substrate.
CN201910710976.0A 2019-08-02 2019-08-02 Bonding structure and preparation method thereof, display panel Pending CN110491852A (en)

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