TWI606466B - Nuclear layer technology anisotropic conductive film - Google Patents

Nuclear layer technology anisotropic conductive film Download PDF

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TWI606466B
TWI606466B TW104119316A TW104119316A TWI606466B TW I606466 B TWI606466 B TW I606466B TW 104119316 A TW104119316 A TW 104119316A TW 104119316 A TW104119316 A TW 104119316A TW I606466 B TWI606466 B TW I606466B
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adhesive layer
resin
layer
conductive
conductive film
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TW201643897A (en
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Zi-Wei Zhou
Ting-Guang Liang
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核層技術異方性導電膠膜 Nuclear layer technology anisotropic conductive film

本發明係有關於一種異方性導電膠膜及其製作方法,尤其是被包夾在上部膠層以及下部膠層之間的導電膠層包含絕緣基材及多個導電顆粒,且是以單一顆粒厚度的方式分佈在絕緣基材內或在絕緣基材的表面上。 The invention relates to an anisotropic conductive adhesive film and a manufacturing method thereof, in particular, the conductive adhesive layer sandwiched between the upper adhesive layer and the lower adhesive layer comprises an insulating substrate and a plurality of conductive particles, and is a single The particle thickness is distributed in the insulating substrate or on the surface of the insulating substrate.

不同電子元件之間的實體連接最常使用焊接方式,主要是利用具較低熔點的鉛錫合金當作焊料,在適當加熱下瞬間熔化焊料以接觸二電子元件的接腳,當移除加熱時,焊料即可固化而穩固的連接二電子元件。另一方式是使用高溫錫爐,將表面黏著技術(Surface-mount technology,SMT)的電子元件事先安置在具有焊料的電氣電路上,再經高溫爐的瞬間加熱、冷卻後,焊料即可連接所有電子元件。 The physical connection between different electronic components is most commonly used by soldering, mainly by using a tin-tin alloy with a lower melting point as a solder, and melting the solder instantaneously under appropriate heating to contact the pins of the two electronic components when the heating is removed. The solder can be solidified and firmly connected to the two electronic components. Another way is to use a high-temperature tin furnace to place the surface-mount technology (SMT) electronic components on the electrical circuit with solder beforehand. After the instant heating and cooling of the high-temperature furnace, the solder can be connected. Electronic component.

不過傳統的鍚鉛迴焊製程無法適用於需要輕薄短小且較低耗電量的應用領域,比如薄膜電晶體液晶顯示器(Thin Film Transistor Liquid Crystal Display,TFT-LCD)中驅動(Integrated Circuit,IC)與基板的連接,因為驅動IC中用以連接外部電路的金凸塊(Gold Bumping)的間距一般較小,約20um~40um,且金凸塊的熔點相對與錫鉛凸塊高很多。因此,目前主要是使用異方性導電膠膜(ACF:Anisotropic Conductive Film)的接合方式。 However, the traditional lead-lead reflow process cannot be applied to applications that require thin, short, and low power consumption, such as Thin Film Transistor Liquid Crystal Display (TFT-LCD) (Integrated Circuit, IC). The connection to the substrate is because the pitch of the gold bumps used to connect the external circuits in the driver IC is generally small, about 20 um to 40 um, and the melting point of the gold bumps is relatively higher than that of the tin-lead bumps. Therefore, at present, a bonding method using an anisotropic conductive film (ACF: Anisotropic Conductive Film) is mainly used.

ACF的組成主要包含導電粒子及絕緣膠材,導電粒子包含在絕緣膠材內,由於絕緣膠材在加熱下具有黏滯性,且在外來垂直壓力下,其中的導電粒子向受壓方向上移動,進而相互接觸或擠壓變形,因而形成受壓垂直縱方向上具有電氣導通的效應,但在未受擠壓的水平橫方向上因導電粒子仍被絕緣膠材隔離開而形成絕緣性的電氣狀態,當經過一段時間使絕緣膠材固化後,導電粒子便不再受外力而移動而形成垂直導通但水平 絕緣的穩定結構。因此,使TFT-LCD驅動IC與基板形成良好的電氣連接。 The composition of ACF mainly comprises conductive particles and insulating rubber materials. The conductive particles are contained in the insulating rubber material. Because the insulating rubber material has viscosity under heating, and under the external vertical pressure, the conductive particles move in the pressure direction. Further, they are in contact with each other or are pressed and deformed, thereby forming an electrical conduction effect in the vertical direction of the pressed, but the electrically conductive particles are still separated by the insulating rubber in the horizontal direction of the uncompressed to form an insulating electrical. State, when the insulating rubber is cured after a period of time, the conductive particles are no longer moved by external force to form a vertical conduction but horizontal Stable structure with insulation. Therefore, the TFT-LCD driver IC is formed into a good electrical connection with the substrate.

導電粒子的種類可分為碳黑、金屬球及外鍍金屬之樹脂球等。碳黑為早期產品,目前使用已不多。金屬球則以鎳球為大宗,優點在於其高硬度、低成本,尖角狀突起可插入接點中以增加接觸面積;缺點則在其可能破壞脆弱的接點、容易氧化而影響導通等。為克服鎳球之氧化問題,可在鎳球表面鍍金而成為鍍金鎳球。目前鎳球之導電粒子多用於與PCB之連接,LCD面板之ITO電極連接則不適用,主要原因在於金屬球質硬且多尖角,怕其對ITO線路造成損傷。因此,用於TFT-LCD的ACF是以鍍金鎳之樹脂球為主流,由於樹脂球具彈性,不但不會傷害ITO線路,且在加壓膠合的過程中,球體將變形呈橢球狀以增加接觸面積。 The types of conductive particles can be classified into carbon black, metal balls, and resin balls coated with metal. Carbon black is an early product and is currently not used much. The metal ball is made of nickel balls. The advantage is that it has high hardness and low cost. The sharp-angled protrusions can be inserted into the joint to increase the contact area. The disadvantage is that it may damage the weak joint, easily oxidize and affect the conduction. In order to overcome the oxidation problem of the nickel ball, the surface of the nickel ball can be plated with gold to become a gold-plated nickel ball. At present, the conductive particles of the nickel sphere are mostly used for connection with the PCB, and the ITO electrode connection of the LCD panel is not applicable. The main reason is that the metal sphere is hard and has many sharp corners, which may cause damage to the ITO line. Therefore, the ACF used for TFT-LCD is mainly made of gold-plated nickel resin ball. Because the resin ball has elasticity, it will not damage the ITO circuit, and in the process of pressure bonding, the sphere will be deformed into an ellipsoid to increase Contact area.

ACF中之導電粒子扮演垂直導通的關鍵角色,絕緣膠材中導電粒子數目越多或導電粒子的體積越大,垂直方向的接觸電阻越小,導通效果也就越好。然而,過多或過大的導電粒子可能會在熱壓合時,橫向的金凸塊間容易彼此接觸而造成橫向導通的短路,使得電氣功能不正常或甚至失效而導致整個TFT-LCD損壞。尤其是,TFT-LCD解析度要求日益提高,驅動IC的接腳數目也隨著增加,而相對地金凸塊與基板上連接墊片的尺寸就愈來愈細窄化,亦即朝向細小間距(fine pitch)。 The conductive particles in ACF play a key role in vertical conduction. The more the number of conductive particles in the insulating rubber or the larger the volume of the conductive particles, the smaller the contact resistance in the vertical direction, and the better the conduction effect. However, excessive or excessive conductive particles may be easily contacted with each other when the thermal bonding is performed, causing a short-circuit of the lateral conduction, causing an electrical function to be abnormal or even failing to cause damage to the entire TFT-LCD. In particular, TFT-LCD resolution requirements are increasing, and the number of pins of the driver IC is also increasing, and the size of the gold bumps and the connection pads on the substrate is increasingly narrower, that is, toward a fine pitch. (fine pitch).

為了在接觸面積縮小的情況下能維持住足夠的導通電量,就必須提高導電粒子的捕捉率,因而須增加導電粒子的添加量,這不僅會增加製造成本而不利於市場競爭,還會增加導電粒子的添加量而降低橫向電氣絕緣,因為橫向的導電粒子有可能因垂直加壓產生橫向推擠的效應而相互接觸形成電氣導通,甚至造成相鄰接腳或金凸塊發生短路而失效的嚴重後果。 In order to maintain a sufficient amount of conduction and conduction in the case where the contact area is reduced, it is necessary to increase the trapping rate of the conductive particles, and thus it is necessary to increase the amount of the conductive particles added, which not only increases the manufacturing cost but is not conducive to market competition, and also increases the conductivity. The amount of particles added reduces the lateral electrical insulation, because the lateral conductive particles may contact each other due to the effect of lateral pressing to form electrical conduction, and even cause short-circuiting of adjacent pins or gold bumps. as a result of.

此外,習用技術中導電膠膜內的導電粒子是自由散亂分佈,因此當熱壓合時,如果部分位置偏移之導電粒子未被補捉到而無法產生導電作用,或是補捉到的導電粒子數目不足都會造成導電效果不良而影響電氣品質。 In addition, in the conventional technology, the conductive particles in the conductive film are freely scattered, so when the heat is pressed, if the partially displaced conductive particles are not captured, the conductive effect cannot be obtained, or the trapping is not possible. Insufficient number of conductive particles can cause poor electrical conductivity and affect electrical quality.

因此,很需要一種創新的核層技術異方性導電膠膜,利用上部膠層及下部膠層上、下包夾住包含絕緣基材及導電顆粒的導電膠層,且 上部膠層及下部膠層在受熱加壓時的流動性是大於絕緣基材,尤其是導電膠層的導電顆粒是以單一顆粒厚度的方式分佈在絕緣基材內或在絕緣基材的表面上,使得在絕緣基材的垂直方向上最多只有單一導電顆粒,避免積體電路中間距小的接腳因堆積過多的導電顆粒而短路,可大幅提高良率,藉以解決上述習用技術的問題。 Therefore, there is a need for an innovative nuclear layer technology anisotropic conductive film, which utilizes an upper adhesive layer and a lower adhesive layer to sandwich a conductive adhesive layer comprising an insulating substrate and conductive particles. The fluidity of the upper adhesive layer and the lower adhesive layer when heated and pressurized is greater than that of the insulating substrate, and particularly the conductive particles of the conductive adhesive layer are distributed in the insulating substrate or on the surface of the insulating substrate in a single particle thickness. Therefore, at most only a single conductive particle in the vertical direction of the insulating substrate, to avoid short-circuiting of the pin with small pitch in the integrated circuit due to accumulation of excessive conductive particles, the yield can be greatly improved, thereby solving the problem of the above-mentioned conventional technology.

本發明之主要目的在提供一種核層技術異方性導電膠膜,主要是包括依序堆疊的上部膠層、導電膠層以及下部膠層,其中上部膠層以及下部膠層為相同或不相同的電氣絕緣材料構成,而導電膠層是由絕緣基材以及多個導電顆粒構成,且該等導電顆粒是以單一顆粒厚度的方式分佈在絕緣基材內或在絕緣基材的表面上,亦即,在絕緣基材的垂直方向上最多只有單一導電顆粒。 The main purpose of the present invention is to provide a core layer technology anisotropic conductive film, which mainly comprises an upper adhesive layer, a conductive adhesive layer and a lower adhesive layer which are sequentially stacked, wherein the upper adhesive layer and the lower adhesive layer are the same or different. The electrical insulating material is composed of an insulating substrate and a plurality of conductive particles, and the conductive particles are distributed in the insulating substrate or on the surface of the insulating substrate in a single particle thickness. That is, there is at most a single conductive particle in the vertical direction of the insulating substrate.

上部膠層以及下部膠層在受熱加壓時的流動性是大於導電膠層中絕緣基材的在受熱加壓時的流動性,使得整個核層技術異方性導電膠膜在受熱加壓時,上部膠層以及下部膠層的流動速率或變形程度會大於絕緣基材。 The fluidity of the upper adhesive layer and the lower adhesive layer when heated and pressurized is greater than the flowability of the insulating substrate in the conductive adhesive layer under heat and pressure, so that the entire nuclear layer technical anisotropic conductive film is heated and pressurized. The upper adhesive layer and the lower adhesive layer may have a higher rate of flow or deformation than the insulating substrate.

上述的電氣絕緣材料可包含熱固性、熱可塑樹脂,例如環氧樹脂、苯酚樹脂、矽氧樹脂、丙烯酸樹脂、苯氧樹脂、聚脂樹脂、聚胺脂樹脂、聚醯胺樹脂、聚烯烴樹脂、丙烯酸橡膠、合成橡膠、天然橡膠。而導電膠層的絕緣基材可包含感壓膠、熱固性或熱可塑樹脂,例如環氧樹脂、苯酚樹脂、矽氧樹脂、丙烯酸樹脂、苯氧樹脂、聚脂樹脂、聚胺脂樹脂、聚醯胺樹脂、聚烯烴樹脂、丙烯酸橡膠、合成橡膠、天然橡膠。 The above electrical insulating material may comprise a thermosetting, thermoplastic resin such as an epoxy resin, a phenol resin, a silicone resin, an acrylic resin, a phenoxy resin, a polyester resin, a polyurethane resin, a polyamide resin, a polyolefin resin, Acrylic rubber, synthetic rubber, natural rubber. The insulating substrate of the conductive adhesive layer may comprise pressure sensitive adhesive, thermosetting or thermoplastic resin, such as epoxy resin, phenol resin, epoxy resin, acrylic resin, phenoxy resin, polyester resin, polyurethane resin, polyfluorene. Amine resin, polyolefin resin, acrylic rubber, synthetic rubber, natural rubber.

導電顆粒可為樹脂鍍鎳金球,主要是包含樹脂核心、鍍鎳層及金層,其中鍍鎳層包覆樹脂核心,而金層包覆鍍鎳層,因此導電顆粒的表面金層,具有優異的導電性。 The conductive particles may be nickel-plated gold balls of a resin, mainly comprising a resin core, a nickel plating layer and a gold layer, wherein the nickel plating layer covers the resin core, and the gold layer covers the nickel plating layer, so the surface gold layer of the conductive particles has Excellent electrical conductivity.

因此,本發明的核層技術異方性導電膠膜很適合應用於電氣連接積體電路以及電路板,尤其是將間距較小的積體電路接腳連接到玻璃基板上的薄狀銦錫氧化物(ITO)層,使得被積體電路的接腳以及銦錫氧化物層上下壓合的導電顆粒可同時接觸到接腳以及銦錫氧化物層,達到電氣連 接的目的,其中部分的部膠層以及下部膠層會在壓合時被推擠而填滿相鄰接腳之間的空隙以及銦錫氧化物層的空隙,而未被接腳以及銦錫氧化物層上下壓合到的導電顆粒則保持原有狀態而不與任何接腳或銦錫氧化物層接觸,形成電氣絕緣。 Therefore, the core layer technology anisotropic conductive film of the present invention is suitable for electrical connection integrated circuit and circuit board, especially thin indium tin oxide which is connected to a glass substrate by a small pitch integrated circuit pin. The (ITO) layer enables the conductive particles of the integrated circuit and the indium tin oxide layer to be contacted to the pin and the indium tin oxide layer simultaneously to reach the electrical connection. For the purpose of connection, part of the adhesive layer and the lower adhesive layer are pushed at the time of pressing to fill the gap between the adjacent pins and the void of the indium tin oxide layer, and are not pinned and indium tin The conductive particles pressed up and down by the oxide layer remain in their original state without being in contact with any pins or indium tin oxide layers to form electrical insulation.

10‧‧‧上部膠層 10‧‧‧Upper glue layer

20‧‧‧導電膠層 20‧‧‧conductive adhesive layer

21‧‧‧絕緣基材 21‧‧‧Insulation substrate

22‧‧‧導電顆粒 22‧‧‧Electrical particles

30‧‧‧下部膠層 30‧‧‧Under layer

40‧‧‧積體電路 40‧‧‧Integrated circuit

42‧‧‧接腳 42‧‧‧ feet

50‧‧‧電路板 50‧‧‧ boards

52‧‧‧電路圖案 52‧‧‧ circuit pattern

第一圖顯示依據本發明實施例核層技術異方性導電膠膜的示意圖。 The first figure shows a schematic diagram of an anisotropic conductive film of a core layer technique in accordance with an embodiment of the present invention.

第二圖顯示依據本發明核層技術異方性導電膠膜的應用實例示意圖。 The second figure shows a schematic diagram of an application example of an anisotropic conductive film according to the core layer technique of the present invention.

以下配合圖示及元件符號對本發明之實施方式做更詳細的說明,俾使熟習該項技藝者在研讀本說明書後能據以實施。 The embodiments of the present invention will be described in more detail below with reference to the drawings and the reference numerals, which can be implemented by those skilled in the art after having studied this specification.

請參閱第一圖,本發明實施例核層技術異方性導電膠膜的示意圖。如第一圖所示,本發明實施例的核層技術異方性導電膠膜主要包括上部膠層10、導電膠層20以及下部膠層30,是依序由上而下堆疊,形成膜狀的堆疊結構,其中導電膠層20是由絕緣基材21以及多個導電顆粒22構成,且該等導電顆粒22是以單一顆粒厚度的方式分佈在絕緣基材21內或在絕緣基材22的表面上,圖中為顯示導電顆粒22是分佈在絕緣基材21內的實例,亦即,在絕緣基材21的垂直方向上最多只有單一導電顆粒22。 Please refer to the first figure, a schematic diagram of an anisotropic conductive film of a core layer technology according to an embodiment of the invention. As shown in the first figure, the core layer technical anisotropic conductive film of the embodiment of the invention mainly comprises an upper adhesive layer 10, a conductive adhesive layer 20 and a lower adhesive layer 30, which are sequentially stacked from top to bottom to form a film. a stacked structure in which the conductive adhesive layer 20 is composed of an insulating substrate 21 and a plurality of conductive particles 22, and the conductive particles 22 are distributed in the insulating substrate 21 or in the insulating substrate 22 in a single particle thickness manner. On the surface, the figure shows an example in which the conductive particles 22 are distributed in the insulating substrate 21, that is, at most only a single conductive particle 22 in the vertical direction of the insulating substrate 21.

上部膠層10以及下部膠層30可為相同或不相同的電氣絕緣材料構成包含熱固性、熱塑性樹脂,比如環氧樹脂、苯酚樹脂、矽氧樹脂、丙烯酸樹脂、苯氧樹脂、聚脂樹脂、聚胺脂樹脂、聚醯胺樹脂、聚烯烴樹脂、丙烯酸橡膠、合成橡膠、天然橡膠,而導電膠層20的絕緣基材21可包含感壓膠、熱固性、熱塑性樹脂,比如環氧樹脂、苯酚樹脂、矽氧樹脂、丙烯酸樹脂、苯氧樹脂、聚脂樹脂、聚胺脂樹脂、聚醯胺樹脂、聚烯烴樹脂、丙烯酸橡膠、合成橡膠、天然橡膠。 The upper adhesive layer 10 and the lower adhesive layer 30 may be made of the same or different electrical insulating materials, including a thermosetting, thermoplastic resin such as an epoxy resin, a phenol resin, a silicone resin, an acrylic resin, a phenoxy resin, a polyester resin, and a poly An amine resin, a polyamide resin, a polyolefin resin, an acrylic rubber, a synthetic rubber, a natural rubber, and the insulating substrate 21 of the conductive adhesive layer 20 may contain a pressure sensitive adhesive, a thermosetting resin, a thermoplastic resin such as an epoxy resin or a phenol resin. , enamel resin, acrylic resin, phenoxy resin, polyester resin, polyurethane resin, polyamide resin, polyolefin resin, acrylic rubber, synthetic rubber, natural rubber.

導電顆粒22為具有導電性的微粒,其顆粒大小(Particle Size)約為2.5至10um,而具體實例可為樹脂鍍鎳金球,主要是包含樹脂核心、鍍鎳層及金層,其中鍍鎳層包覆樹脂核心,而金層包覆鍍鎳層,因此導電顆粒的表面為金層,具有優異的導電性。 The conductive particles 22 are conductive particles having a particle size of about 2.5 to 10 um, and a specific example may be a resin nickel-plated gold ball, mainly comprising a resin core, a nickel plating layer and a gold layer, wherein nickel plating The layer is coated with a resin core, and the gold layer is coated with a nickel plating layer, so that the surface of the conductive particles is a gold layer and has excellent electrical conductivity.

具體而言,上述的導電膠層20可利用轉印的方式而實現,也可直接將絕緣基材21以及導電顆粒22進行混合攪拌的混膠處理,再經噴塗或塗佈處理而形成。 Specifically, the conductive paste layer 20 described above may be realized by a transfer method, or may be formed by directly mixing the insulating base material 21 and the conductive particles 22 by mixing and stirring, and then spraying or coating.

此外,上部膠層10以及下部膠層30在受熱加壓時的流動性是大於導電膠層20中絕緣基材21在受熱加壓時的流動性,使得整個核層技術異方性導電膠膜在受熱加壓時,上部膠層10以及下部膠層30的流動速率或變形程度會大於絕緣基材21。 In addition, the fluidity of the upper rubber layer 10 and the lower rubber layer 30 when heated and pressurized is greater than the fluidity of the insulating substrate 21 in the conductive adhesive layer 20 when heated and pressurized, so that the entire nuclear layer technology is anisotropic conductive film. When heated and pressurized, the flow rate or degree of deformation of the upper subbing layer 10 and the lower subbing layer 30 may be greater than that of the insulating substrate 21.

為進一步顯示本發明的特徵,可參考第二圖,本發明核層技術異方性導電膠膜的應用實例示意圖。如第二圖所示,本發明的核層技術異方性導電膠膜是被積體電路40以及電路板50在加熱下以上下壓合的結合成一體,其中積體電路40包含多個接腳42,而電路板50具有電路圖案52,比如電路板50可為電氣絕緣的玻璃基板,而電路圖案52為導電的薄狀銦錫氧化物(ITO)層。 In order to further illustrate the features of the present invention, reference may be made to the second figure, which is a schematic diagram of an application example of the anisotropic conductive film of the core layer technology of the present invention. As shown in the second figure, the core layer technology anisotropic conductive film of the present invention is a combination of the integrated circuit 40 and the circuit board 50 under the heating and pressing, wherein the integrated circuit 40 includes a plurality of connections. The foot 42 and the circuit board 50 have a circuit pattern 52, such as the circuit board 50 being an electrically insulating glass substrate and the circuit pattern 52 being a conductive, thin indium tin oxide (ITO) layer.

由於被積體電路40的接腳42以及路圖案52上下壓合的導電顆粒22會直接接觸到接腳42以及路圖案52,因而相對應的接腳42以及電路圖案52形成電氣連接,而上部膠層10以及下部膠層30會因受熱擠壓而變形、流動,進而填滿相鄰接腳42之間的空隙,同時也填滿電路圖案52的空隙。此外,未被接腳42以及電路圖案52壓合到的導電顆粒22則仍保持原有的狀態而不與任何接腳42以及電路圖案52直接接觸,亦即形成電氣絕緣。 Since the conductive particles 22 which are pressed up and down by the pin 42 of the integrated circuit 40 and the road pattern 52 directly contact the pin 42 and the road pattern 52, the corresponding pin 42 and the circuit pattern 52 form an electrical connection, and the upper portion The glue layer 10 and the lower glue layer 30 are deformed and flow by being pressed by heat, thereby filling the gap between the adjacent pins 42 and filling the gap of the circuit pattern 52 at the same time. In addition, the conductive particles 22 that are not pressed by the pins 42 and the circuit pattern 52 remain in their original state without being in direct contact with any of the pins 42 and the circuit pattern 52, that is, electrical insulation is formed.

因此,相對應的接腳42以及電路圖案52可經由被擠壓的導電顆粒22而正確的電氣連接,並具有很低的接面電阻,因為實際接觸到接腳42以及電路圖案52是導電顆粒22最外面的金層。再者,上部膠層10以及下部膠層30的受熱擠壓、變形、流動的程度是大於導電膠層20的絕緣基材21,所以絕緣基材21可幾乎保持不動,而其中的相對應導電顆粒22仍是在原有位置,使得變形、流動的上部膠層10及下部膠層3分別填滿相鄰接腳42之間的空隙以及電路圖案52的空隙。 Accordingly, the corresponding pins 42 and circuit patterns 52 can be properly electrically connected via the extruded conductive particles 22 and have a very low junction resistance because the actual contacts to the pins 42 and the circuit pattern 52 are conductive particles. 22 outermost gold layer. Moreover, the upper adhesive layer 10 and the lower adhesive layer 30 are heated to be extruded, deformed, and flowed to a greater extent than the insulating base material 21 of the conductive adhesive layer 20, so the insulating substrate 21 can be kept almost stationary, and the corresponding conductive therein The particles 22 are still in the original position such that the deformed, flowing upper rubber layer 10 and the lower rubber layer 3 fill the gap between the adjacent pins 42 and the gap of the circuit pattern 52, respectively.

綜上所述,本發明核層技術異方性導電膠膜的主要特點在於 很適合應用於電氣連接積體電路以及電路板,尤其是接腳間距(Pitch)小的積體電路,比如間距小於40um,或間距為15um,可很精確的經由導電顆粒而電氣連接到電路板的電路圖案或玻璃基板的透明導電層,比如ITO層,大幅提高電氣連接的良率,可避免積體電路的接腳或電路板的電路圖案因過多的導電顆粒之堆積而短路。 In summary, the main feature of the anisotropic conductive film of the core layer technology of the present invention is that It is suitable for electrical connection integrated circuits and circuit boards, especially integrated circuits with small pitch (Pitch), such as pitch less than 40um, or 15um pitch, which can be electrically connected to the board via conductive particles. The circuit pattern or the transparent conductive layer of the glass substrate, such as the ITO layer, greatly improves the yield of the electrical connection, and can avoid short circuit of the circuit of the integrated circuit or the circuit pattern of the circuit board due to the accumulation of excessive conductive particles.

由於本發明的技術內並未見於已公開的刊物、期刊、雜誌、媒體、展覽場,因而具有新穎性,且能突破目前的技術瓶頸而具體實施,確實具有進步性。此外,本發明能解決習用技術的問題,改善整體使用效率,而能達到具產業利用性的價值。 Since the technology of the present invention is not found in published publications, periodicals, magazines, media, exhibition venues, and thus is novel, and can be implemented by breaking through the current technical bottlenecks, it is indeed progressive. In addition, the present invention can solve the problems of the conventional technology, improve the overall use efficiency, and can achieve the value of industrial utilization.

以上所述者僅為用以解釋本發明之較佳實施例,並非企圖據以對本發明做任何形式上之限制,是以,凡有在相同之發明精神下所作有關本發明之任何修飾或變更,皆仍應包括在本發明意圖保護之範疇。 The above is only a preferred embodiment for explaining the present invention, and is not intended to limit the present invention in any way, and any modifications or alterations to the present invention made in the spirit of the same invention. All should still be included in the scope of the intention of the present invention.

10‧‧‧上部膠層 10‧‧‧Upper glue layer

20‧‧‧導電膠層 20‧‧‧conductive adhesive layer

21‧‧‧絕緣基材 21‧‧‧Insulation substrate

22‧‧‧導電顆粒 22‧‧‧Electrical particles

30‧‧‧下部膠層 30‧‧‧Under layer

Claims (7)

一種核層技術異方性導電膠膜,包括:一上部膠層,具電氣絕緣性,是由一電氣絕緣材料構成;一導電膠層,包含一絕緣基材以及多個導電顆粒,且該等導電顆粒是以單一顆粒厚度的方式分佈在該絕緣基材的一表面上,使得該絕緣基材在垂直方向上最多只有單一導電顆粒;以及一下部膠層,具電氣絕緣性,是由相同於或不相同於該上部膠層的電氣絕緣材料所構成,其中該上部膠層、該導電膠層以及該下部膠層是依序由上而下堆疊以形成膜狀的一堆疊結構,且該上部膠層及該下部膠層是分開獨立製程,該導電膠層的絕緣基材包含合成橡膠或天然橡膠、感壓膠、熱固性樹脂或熱塑性樹脂進行混參。 A core layer technology anisotropic conductive film, comprising: an upper adhesive layer, electrically insulating, is composed of an electrical insulating material; a conductive adhesive layer comprising an insulating substrate and a plurality of conductive particles, and the like The conductive particles are distributed on a surface of the insulating substrate in a single particle thickness such that the insulating substrate has at most only a single conductive particle in the vertical direction; and the lower adhesive layer is electrically insulated and is the same as Or an electrically insulating material different from the upper adhesive layer, wherein the upper adhesive layer, the conductive adhesive layer and the lower adhesive layer are sequentially stacked from top to bottom to form a film-like stacked structure, and the upper portion The adhesive layer and the lower adhesive layer are separately and independently processed, and the insulating base material of the conductive adhesive layer comprises synthetic rubber or natural rubber, pressure sensitive adhesive, thermosetting resin or thermoplastic resin for mixing. 依據申請專利範圍第1項之核層技術異方性導電膠膜,其中該上部膠層及該下部膠層的電氣絕緣材料包含熱固性樹脂、熱塑性樹脂。 The nuclear layer technical anisotropic conductive film according to the first aspect of the patent application, wherein the upper adhesive layer and the electrical insulating material of the lower adhesive layer comprise a thermosetting resin and a thermoplastic resin. 依據申請專利範圍第2項之核層技術異方性導電膠膜,其中該上部膠層及該下部膠層的電氣絕緣材料包含環氧樹脂、苯酚樹脂、矽氧樹脂、丙烯酸樹脂、苯氧樹脂、聚脂樹脂、聚胺脂樹脂、聚醯胺樹脂、聚烯烴樹脂、合成橡膠或天然橡膠。 The nuclear layer technical anisotropic conductive film according to claim 2, wherein the upper adhesive layer and the electrical insulating material of the lower adhesive layer comprise epoxy resin, phenol resin, epoxy resin, acrylic resin, phenoxy resin , polyester resin, polyurethane resin, polyamide resin, polyolefin resin, synthetic rubber or natural rubber. 依據申請專利範圍第1項之核層技術異方性導電膠膜,其中該導電顆粒的顆粒大小(Particle Size)為2.5至10um。 The core layer technical anisotropic conductive film according to claim 1 of the patent application, wherein the conductive particles have a particle size of 2.5 to 10 um. 依據申請專利範圍第1項之核層技術異方性導電膠膜,其中該等導電顆粒是利用一轉印的方式而配置在絕緣基材上。 The nuclear layer technical anisotropic conductive film according to claim 1 of the patent application, wherein the conductive particles are disposed on the insulating substrate by means of a transfer. 依據申請專利範圍第1項之核層技術異方性導電膠膜,其中該絕緣基材及該等導電顆粒是藉進行混合攪拌的混膠處理,再經噴塗或塗佈處理而形成該導電膠層。 According to the nuclear layer technical anisotropic conductive film of claim 1, wherein the insulating substrate and the conductive particles are mixed by mixing, and then sprayed or coated to form the conductive adhesive. Floor. 依據申請專利範圍第1項之核層技術異方性導電膠膜,其中該上部膠層以及該下部膠層在受熱加壓時的流動性是大於該導電膠層中該絕緣基材在受熱加壓時的流動性。 According to the nuclear layer technical anisotropic conductive film of claim 1, wherein the upper adhesive layer and the lower adhesive layer have a fluidity greater than that of the conductive adhesive layer in the conductive adhesive layer. Mobility during pressure.
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