CN110484761B - Method for refining and spheroidizing primary silicon in high-silicon aluminum alloy - Google Patents

Method for refining and spheroidizing primary silicon in high-silicon aluminum alloy Download PDF

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CN110484761B
CN110484761B CN201910915134.9A CN201910915134A CN110484761B CN 110484761 B CN110484761 B CN 110484761B CN 201910915134 A CN201910915134 A CN 201910915134A CN 110484761 B CN110484761 B CN 110484761B
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闫国庆
林毛古
李智生
潘欢欢
柴海俊
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Shanxi Regal Metal New Material Co ltd
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    • C22METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
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    • C22C1/00Making non-ferrous alloys
    • C22C1/02Making non-ferrous alloys by melting
    • C22C1/026Alloys based on aluminium
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    • C22METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22CALLOYS
    • C22C1/00Making non-ferrous alloys
    • C22C1/02Making non-ferrous alloys by melting
    • C22C1/03Making non-ferrous alloys by melting using master alloys
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    • C22METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22CALLOYS
    • C22C1/00Making non-ferrous alloys
    • C22C1/06Making non-ferrous alloys with the use of special agents for refining or deoxidising
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    • C22METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
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    • C22C21/00Alloys based on aluminium
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    • C22C21/04Modified aluminium-silicon alloys

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Abstract

The invention relates to a method for refining and spheroidizing primary crystal silicon in a high-silicon aluminum alloy, wherein in the related high-silicon aluminum alloy, the mass percent of Si is 18-50%, the mass percent of P is 0.003-0.02%, and the method for refining and spheroidizing the primary crystal silicon comprises the effective combination of the following methods, namely high-temperature melt overheating treatment, P salt modification treatment and thermal diffusion treatment.

Description

Method for refining and spheroidizing primary silicon in high-silicon aluminum alloy
Technical Field
The invention relates to the technical field of casting, in particular to a method for refining and spheroidizing primary silicon in a high-silicon aluminum alloy.
Background
The cast aluminum-silicon alloy has the advantages of good casting performance, high specific strength, excellent cutting performance and the like, is one of the most commonly used aluminum alloy series in cast aluminum alloys, particularly hypereutectic aluminum-silicon alloy, and has the characteristics of small linear expansion coefficient, good wear resistance and the like due to the higher silicon content, so that the cast aluminum-silicon alloy has wide application range, such as pistons, brake discs, swash plates of air-conditioning compressors, special fasteners, high-precision instruments, electronic packaging materials and the like.
When the silicon content in the aluminum alloy is too high, the precipitated primary crystal silicon is easy to form large-size, irregular-shape plate-like, five-petal-like, pyramid-like, octahedral and other shapes, the irregular large-size primary crystal silicon enables the performance of the material to be reduced, and the strength and the toughness of the alloy are obviously reduced. Many existing aluminum alloy grades, such as AC9A, A390, LM29, ZL117 and the like, contain high-content Si, so how to obtain fine and uniformly distributed primary crystal silicon is the key point for preparing high-performance hypereutectic aluminum-silicon alloy.
Scholars at home and abroad make a great deal of basic theoretical research on how to refine primary silicon in hypereutectic aluminum-silicon alloy, such as high-low temperature melt treatment, ultrasonic vibration, rapid cooling casting, melt semi-solid treatment and the like, but the industrial batch production is difficult at present due to the limitations of complicated and complicated process operation or overhigh production technology and equipment cost and the like. At present, the method is more economical and effective to modify the alloy, and many scholars invent various novel modifiers and modification methods, such as P-S (patent CN 101368237A), P-Re (patent CN 1392277A), P-Sr (patent CN 1408132A), Al-P (patent CN109280823A), Al-B-P (patent CN109913675A), Al-Mg-P (patent CN 102329998B), Cu-P, etc., adopt novel modification elements, such as Be (patent CN 107190183B), P, Ca composite modification (patent CN 103361524B), Zn and S composite modification (CN 104384482B), and adopt novel high-low temperature melt mixing methods, but the methods have some defects, such as adopting rare earth with higher price, Be adopting harmful elements, S generating more pollution, and the like Cu-P alloy can also bring a large amount of Cu elements into target materials, so the method is only suitable for preparing some specific alloys, Or the preparation process involved is strict, etc.
Disclosure of Invention
In the high-silicon aluminum alloy, the morphology of primary crystal silicon is influenced by a production mode, and the formation mechanism of the primary crystal silicon comprises a twin crystal reentrant angle growth mechanism (TPRE), a dislocation step growth mechanism, a lamella stacking growth mechanism and the like. From the viewpoint of heterogeneous nucleation, whenHigh-temperature heterogeneous nucleation particles with a similar Si lattice structure are added into the AlSi alloy melt, so that the nucleation rate is improved, and the primary crystal silicon phase is fine and uniform. Since Al-P has the same lattice constant (a) as SiAlP=0.546nm,aSi=0.54 nm), both of which are sphalerite structures, and the degree of mismatching is 1.1%, so that AlP clusters are easy to serve as effective nucleation cores of primary silicon, and the P salt is one of the most effective modifiers for refining the primary silicon at present.
The primary crystal silicon is mainly in the shape of a large block, a lath, a star petal, a polyhedron and a pyramid, and is more beneficial to the performance of the material when the primary crystal silicon is uniformly dispersed and the shape tends to be more spherical. When the alloy material with uniform distribution of primary crystal silicon and small size is obtained by means of metamorphism and the like in the earlier stage, the spheroidization process of the primary crystal silicon in the structure can be realized by thermal diffusion treatment.
The invention relates to a method for refining and spheroidizing primary silicon in a high-silicon aluminum alloy, wherein in the high-silicon aluminum alloy, Si accounts for 18-50% by mass, and P accounts for 0.003-0.03% by mass; the method for refining and spheroidizing the primary crystal silicon is an effective combination of the following methods:
(1) carrying out high-temperature overheating treatment on the melt;
(2) modification treatment of phosphorus salt;
(3) carrying out thermal diffusion treatment;
the combinations are as follows: carrying out high-temperature overheating treatment on the high-silicon aluminum alloy, and then adopting phosphorus salt modification treatment;
carrying out high-temperature overheating treatment on the high-silicon aluminum alloy, then adopting phosphorus salt modification treatment, and then adopting thermal diffusion treatment;
carrying out high-temperature overheating treatment on the high-silicon aluminum alloy, and then carrying out thermal diffusion treatment;
the high-silicon aluminum alloy is subjected to phosphorus salt modification treatment and then thermal diffusion treatment.
(1) Carrying out high-temperature overheating treatment on the melt;
the operation is carried out in the following specific mode: preparing a high-silicon aluminum alloy melt, heating the melt to 1000-1200 ℃, and preserving heat for 20-40 min;
the equipment for high-temperature overheating treatment of the high-silicon aluminum alloy melt is a fuel gas heat accumulating type smelting furnace, a power frequency furnace and a high-frequency furnace, and the high-frequency furnace is optimally selected.
(2) Modification treatment of phosphorus salt;
the operation is carried out in the following specific mode: controlling the temperature of the high-silicon aluminum alloy melt at 800-900 ℃; completely pressing the phosphate into the aluminum alloy melt by using a bell jar, and taking out the bell jar after complete reaction; removing dross on the surface of the aluminum liquid; controlling the temperature of the melt to 760-780 ℃, and casting to obtain the target alloy.
(3) Carrying out thermal diffusion treatment;
the operation is carried out in the following specific mode: placing the high-silicon aluminum alloy material in a heat treatment furnace for heat diffusion treatment, heating the sample to 540 ℃ and 560 ℃ along with the furnace, and preserving the heat for 12-24 h; taking out the sample and then cooling in air; placing the cooled sample in a heat treatment furnace for secondary heat treatment, heating the sample to 600-620 ℃ along with the furnace, and preserving heat for 5-20 min; taking out the sample and then cooling in air;
the invention is shown in figure 1, which is a metallographic structure photograph of AlSi20 alloy without any treatment, wherein the photograph shows that primary silicon presents massive polygonal blocky particles with the particle size of more than 50 um;
the material is processed by high-temperature overheating of melt at 1000-1200 ℃ for 20-40min, most of the precipitated primary crystal silicon is in a branch petal shape, because only when the temperature is increased to more than 1000 ℃, as for the high-silicon aluminum alloy, the high-silicon aluminum alloy is in a true melting state, Si-Si bonds are broken, Si-Si atomic groups are reduced, uniform, beneficial and metastable Al-Si atomic clusters are formed, the melt structure becomes uniform and disordered, under the condition of no modification treatment, Si grows along 111 preferentially in the solidification process because of no existence of inhibiting elements, and is easy to grow into dendrite, as shown in the attached figure 2, the metallographic structure of the AlSi20 alloy after being subjected to the high-temperature overheating treatment of the melt in the embodiment 1 of the invention is shown, primary crystal silicon in the metallographic structure has obvious star petal shape and a certain refining effect on the primary crystal silicon, and some of the primary crystal silicon is granular;
when the aluminum-silicon alloy is subjected to high-temperature overheating treatment on the melt and then is subjected to P salt modification treatment, more dispersed Al-P clusters can be formed in the melt, and more heterogeneous nucleation points can be formed, so that primary silicon is in a smaller granular shape, as shown in figure 3, a metallographic structure of the AlSi20 alloy is obtained after the primary silicon is subjected to the P salt modification treatment in example 1 and then is subjected to high-temperature overheating treatment on the melt, the size of the primary silicon in a metallographic photograph is obviously reduced, and the size of the granules can reach about 20 mu m;
after the aluminum-silicon alloy is subjected to high-temperature overheating treatment of a melt, or P salt modification treatment, or combined treatment of high-temperature overheating and P salt modification of the melt to obtain an alloy material with small primary crystal silicon size, the morphology of the primary crystal silicon tends to be spheroidized through thermal diffusion treatment. FIG. 4 shows the metallographic structure of AlSi20 alloy after the high temperature overheating treatment of the melt, the P salt modification treatment and the thermal diffusion treatment in example 2. in the metallographic photograph, it can be seen that the morphology of primary silicon tends to be spherical, the distribution is uniform, and the size can reach about 15 μm, in the invention, the thermal diffusion treatment is divided into two-stage thermal treatment, the first stage adopts 540-; after the first stage treatment, the Si phase in the structure is gradually dissolved in the α -Al matrix, as shown in fig. 5, the shape of the eutectic silicon in the AlSi20 alloy metallographic structure after the high temperature overheating treatment of the melt, the modification treatment of the P salt, and the thermal diffusion treatment in this embodiment 2 is shown, the melting phenomenon of the long strip eutectic silicon occurs, the second stage treatment is at 600-.
The invention mainly adopts a mode of combining high-temperature overheating of a melt, P salt composite alterant and thermal diffusion treatment, can have better refining and spheroidizing effects on primary crystal silicon with the mass percentage of Si of 18-50 percent, the size of the refined primary crystal silicon can be about 15 mu m, and the refined primary crystal silicon has better spheroidizing effect, is not limited by use due to the requirements of material components, can not bring other impurity elements into the melt, has low operation cost and can be produced in an industrialized batch production mode.
Drawings
FIG. 1 is a metallographic structure of an AlSi20 alloy without any treatment;
FIG. 2 is the metallographic structure of the AlSi20 alloy of example 1 after only being subjected to high-temperature melt overheating treatment;
FIG. 3 is the metallographic structure of AlSi20 alloy after the high-temperature overheat treatment of the melt and the P salt modification treatment in example 1;
FIG. 4 shows the metallographic structure of AlSi20 alloy in example 2 after high-temperature molten metal overheating treatment, P salt modification treatment and thermal diffusion treatment;
FIG. 5 shows the metallographic structure of the AlSi20 alloy, i.e., the morphology of eutectic silicon, after the high-temperature overheating treatment, the P salt modification treatment and the thermal diffusion treatment of the melt in this example 2;
FIG. 6 is a heat treatment schedule of the heat diffusion treatment in example 2.
Detailed Description
The following are specific embodiments of the invention. The examples given in the embodiments are merely examples, and the present invention is not limited to the materials described in the following embodiments.
Example 1:
(1) preheating an aluminum alloy ingot, a bell jar and a slag removing tool at the temperature of 200 ℃;
(2) loading the aluminum alloy ingot into a power frequency furnace at normal temperature, and heating until the aluminum ingot is completely melted;
(3) adding 20 mass percent of metallic silicon into the aluminum melt obtained in the step (2);
(4) stirring for 20min after the metallic silicon is completely melted, and keeping the temperature for 25min after stirring;
(5) degassing the solution, and removing the surface scum after degassing;
(6) setting the temperature of the power frequency furnace to 1100 ℃, heating, starting heat preservation timing after the temperature of the power frequency furnace is increased to 1100 ℃, and preserving heat for 20 min;
(7) controlling the temperature of the high-silicon aluminum alloy melt of the step (6) at 800 ℃;
(8) completely pressing the phosphate into the aluminum alloy melt by using a bell jar to ensure that the residual P amount in the final alloy is 0.003 percent, and taking out the bell jar after complete reaction;
(9) removing dross on the surface of the aluminum liquid;
(10) controlling the temperature of the melt to be 760 ℃, and casting to obtain the target alloy.
Example 2:
(1) preheating an aluminum alloy ingot, a bell jar and a slag removing tool at the temperature of 200 ℃;
(2) loading the aluminum alloy ingot into a power frequency furnace at normal temperature, and heating until the aluminum ingot is completely melted;
(3) adding 20 mass percent of metallic silicon into the aluminum melt obtained in the step (2);
(4) stirring for 25min after the metallic silicon is completely melted, and preserving heat for 20min after stirring;
(5) degassing the solution, and removing the surface scum after degassing;
(6) setting the temperature of the power frequency furnace to 1150 ℃, raising the temperature, starting heat preservation and timing after the temperature of the power frequency furnace is raised to 1150 ℃, and preserving the heat for 20 min;
(7) controlling the temperature of the high-silicon aluminum alloy melt of the step (6) at 800 ℃;
(8) completely pressing the phosphate into the aluminum alloy melt by using a bell jar to ensure that the residual P amount in the final alloy is 0.003 percent, and taking out the bell jar after complete reaction;
(9) removing dross on the surface of the aluminum liquid;
(10) controlling the temperature of the melt to be 760 ℃, and casting to obtain an aluminum alloy intermediate alloy;
(11) placing the high-silicon aluminum alloy material obtained in the step (10) in a heat treatment furnace for heat diffusion treatment, heating the sample to 540 ℃ along with the furnace, and preserving heat for 24 hours;
(12) taking out the sample, and placing the sample in air to cool to room temperature;
(13) placing the sample in a heat treatment furnace for secondary heat treatment, heating the sample to 610 ℃ along with the furnace, and preserving heat for 15 min;
(14) and taking out the sample, and cooling the sample in the air to room temperature to obtain the target alloy.
Example 3:
(1) preheating an aluminum alloy ingot, a bell jar and a slag removing tool at the temperature of 200 ℃;
(2) loading the aluminum alloy ingot into a power frequency furnace at normal temperature, and heating until the aluminum ingot is completely melted;
(3) adding 22 mass percent of metal silicon into the aluminum melt obtained in the step (2);
(4) stirring for 30min after the metallic silicon is completely melted, and preserving heat for 20min after stirring;
(5) degassing the solution, and removing the surface scum after degassing;
(6) setting the temperature of the industrial frequency furnace to be 1155 ℃, heating, starting heat preservation timing after the temperature of the industrial frequency furnace is raised to be 1155 ℃, and preserving heat for 25 min;
(7) controlling the temperature of the melt to 770 ℃, and casting to obtain the high-silicon aluminum alloy;
(8) placing the high-silicon aluminum alloy material obtained in the step (7) in a heat treatment furnace for heat diffusion treatment, heating the sample to 550 ℃ along with the furnace, and preserving heat for 12 hours;
(12) taking out the sample, and placing the sample in air to cool to room temperature;
(13) placing the sample in a heat treatment furnace for secondary heat treatment, heating the sample to 615 ℃ along with the furnace, and preserving heat for 15 min;
(14) and taking out the sample, and cooling the sample in the air to room temperature to obtain the target alloy.
Example 4:
(1) preheating an aluminum alloy ingot, a bell jar and a slag removing tool at the temperature of 200 ℃;
(2) loading the aluminum alloy ingot into a power frequency furnace at normal temperature, and heating until the aluminum ingot is completely melted;
(3) adding 30 mass percent of metallic silicon into the aluminum melt obtained in the step (2);
(4) stirring for 30min after the metallic silicon is completely melted, and preserving heat for 25min after stirring;
(5) degassing the solution, and removing the surface scum after degassing;
(6) controlling the temperature of the high-silicon aluminum alloy melt of (5) at 855 ℃;
(7) completely pressing the phosphorus salt into the aluminum alloy melt by using a bell jar to ensure that the residual P amount in the final alloy is 0.006 percent, and taking out the bell jar after complete reaction;
(8) removing dross on the surface of the aluminum liquid;
(9) controlling the temperature of the melt to 765 ℃, and casting to obtain the high-silicon aluminum alloy;
(10) placing the high-silicon aluminum alloy material obtained in the step (9) in a heat treatment furnace for heat diffusion treatment, heating the sample to 545 ℃ along with the furnace, and preserving heat for 18 hours;
(11) taking out the sample, and placing the sample in air to cool to room temperature;
(12) placing the sample in a heat treatment furnace for secondary heat treatment, heating the sample to 620 ℃ along with the furnace, and preserving heat for 10 min;
(13) and taking out the sample, and cooling the sample in the air to room temperature to obtain the target alloy.
Example 5:
(1) preheating an aluminum alloy ingot, a bell jar and a slag removing tool at the temperature of 200 ℃;
(2) putting the aluminum alloy ingot into a high-frequency furnace at normal temperature, and heating until the aluminum ingot is completely melted;
(3) adding 35 mass percent of metallic silicon into the aluminum melt obtained in the step (2);
(4) stirring for 30min after the metallic silicon is completely melted, and preserving heat for 25min after stirring;
(5) degassing the solution, and removing the surface scum after degassing;
(6) heating the industrial frequency furnace at 1160 ℃, starting heat preservation timing after the temperature of the industrial frequency furnace is raised to 1160 ℃, and preserving heat for 25 min;
(7) controlling the temperature of the high-silicon aluminum alloy melt of the step (6) at 860 ℃;
(8) completely pressing the phosphorus salt into the aluminum alloy melt by using a bell jar to ensure that the P residual quantity in the final alloy is 0.0075 percent, and taking out the bell jar after complete reaction;
(9) removing dross on the surface of the aluminum liquid;
(10) controlling the temperature of the melt to 770 ℃, and casting to obtain the high-silicon aluminum alloy;
(11) placing the high-silicon aluminum alloy material obtained in the step (10) in a heat treatment furnace for heat diffusion treatment, heating the sample to 545 ℃ along with the furnace, and preserving heat for 24 hours;
(12) taking out the sample, and placing the sample in air to cool to room temperature;
(13) placing the sample in a heat treatment furnace for secondary heat treatment, heating the sample to 610 ℃ along with the furnace, and preserving heat for 15 min;
(14) and taking out the sample, and cooling the sample in the air to room temperature to obtain the target alloy.
Example 6:
(1) preheating an aluminum alloy ingot, a bell jar and a slag removing tool at the temperature of 200 ℃;
(2) putting the aluminum alloy ingot into a high-frequency furnace at normal temperature, and heating until the aluminum ingot is completely melted;
(3) adding 40 mass percent of metal silicon into the aluminum melt obtained in the step (2);
(4) stirring for 30min after the metallic silicon is completely melted, and preserving heat for 30min after stirring;
(5) degassing the solution, and removing the surface scum after degassing;
(6) heating the industrial frequency furnace at 1180 ℃, starting heat preservation and timing when the temperature of the industrial frequency furnace is increased to 1180 ℃, and preserving heat for 35 min;
(7) controlling the temperature of the high-silicon aluminum alloy melt of the step (6) at 850 ℃;
(8) completely pressing the phosphate into the aluminum alloy melt by using a bell jar to ensure that the residual P amount in the final alloy is 0.02 percent, and taking out the bell jar after complete reaction;
(9) removing dross on the surface of the aluminum liquid;
(10) controlling the temperature of the melt to be 780 ℃, and casting to obtain an aluminum alloy intermediate alloy;
(11) placing the high-silicon aluminum alloy material obtained in the step (10) in a heat treatment furnace for heat diffusion treatment, heating the sample to 545 ℃ along with the furnace, and preserving heat for 24 hours;
(12) taking out the sample, and placing the sample in air to cool to room temperature;
(13) placing the sample in a heat treatment furnace for secondary heat treatment, heating the sample to 620 ℃ along with the furnace, and preserving heat for 20 min;
(14) and taking out the sample, and cooling the sample in the air to room temperature to obtain the target alloy.
The following table is the main idea flow in the examples:
Figure 349652DEST_PATH_IMAGE001

Claims (3)

1. a method for refining and spheroidizing primary silicon in a high-silicon aluminum alloy is characterized in that Si accounts for 18-50% of the high-silicon aluminum alloy by mass percent; the method for refining and spheroidizing the primary crystal silicon is an effective combination of the following methods:
(1) carrying out high-temperature overheating treatment on the melt;
(2) modification treatment of phosphorus salt;
(3) carrying out thermal diffusion treatment;
the combinations are as follows: carrying out high-temperature overheating treatment on the high-silicon aluminum alloy, then adopting phosphorus salt modification treatment, and then adopting thermal diffusion treatment;
carrying out high-temperature overheating treatment on the high-silicon aluminum alloy, and then carrying out thermal diffusion treatment;
the high-temperature overheating treatment of the melt is operated in the following specific manner: preparing a high-silicon aluminum alloy melt, heating the melt to 1000-1200 ℃, and preserving heat for 20-40 min;
the phosphate modification treatment comprises the following specific steps:
(1) preheating a required bell jar and a slag removing tool;
(2) controlling the temperature of the high-silicon aluminum alloy melt at 800-900 ℃;
(3) completely pressing the required phosphorus salt into the aluminum alloy melt by using a bell jar, and taking out the bell jar after complete reaction; p accounts for 0.003 to 0.03 percent of the aluminum alloy by mass;
(4) removing dross on the surface of the aluminum liquid;
the thermal diffusion treatment comprises the following specific steps:
(1) placing the high-silicon aluminum alloy material in a heat treatment furnace for heat diffusion treatment, heating the sample to 540 ℃ and 560 ℃ along with the furnace, and preserving the heat for 12-24 h;
(2) taking out the sample, and placing the sample in air to cool to room temperature;
(3) placing the high-silicon aluminum alloy material obtained in the step (2) in a heat treatment furnace for secondary heat treatment, heating the sample to 600-620 ℃ along with the furnace, and preserving heat for 5-20 min;
(4) the sample was removed and allowed to cool to room temperature in air.
2. The method for refining and spheroidizing primary silicon in the high-silicon aluminum alloy according to claim 1, wherein the equipment for the high-temperature overheating treatment of the high-silicon aluminum alloy melt is a gas regenerative furnace, a power frequency furnace and a high-frequency furnace.
3. The method for refining and spheroidizing primary silicon in the high-silicon aluminum alloy according to claim 2, wherein the equipment for carrying out high-temperature overheating treatment on the high-silicon aluminum alloy melt is a high-frequency furnace.
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