CN110459954B - Semiconductor laser packaging structure and packaging method - Google Patents
Semiconductor laser packaging structure and packaging method Download PDFInfo
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- CN110459954B CN110459954B CN201910785087.0A CN201910785087A CN110459954B CN 110459954 B CN110459954 B CN 110459954B CN 201910785087 A CN201910785087 A CN 201910785087A CN 110459954 B CN110459954 B CN 110459954B
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- chip
- pin
- heat sink
- laser
- semiconductor laser
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- 238000004806 packaging method and process Methods 0.000 title claims abstract description 27
- 239000004065 semiconductor Substances 0.000 title claims abstract description 24
- 238000000034 method Methods 0.000 title claims abstract description 12
- 230000005496 eutectics Effects 0.000 claims description 13
- 238000012544 monitoring process Methods 0.000 claims description 4
- 238000004519 manufacturing process Methods 0.000 abstract description 5
- 238000011161 development Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000012858 packaging process Methods 0.000 description 3
- 238000012360 testing method Methods 0.000 description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 230000005693 optoelectronics Effects 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000013100 final test Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/023—Mount members, e.g. sub-mount members
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/0233—Mounting configuration of laser chips
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/0235—Method for mounting laser chips
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/0235—Method for mounting laser chips
- H01S5/02355—Fixing laser chips on mounts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/024—Arrangements for thermal management
- H01S5/02469—Passive cooling, e.g. where heat is removed by the housing as a whole or by a heat pipe without any active cooling element like a TEC
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
Abstract
The invention relates to a semiconductor laser packaging structure and a packaging method, wherein the packaging structure comprises a tube seat provided with a pin, a first heat sink and a second heat sink are arranged in front of and behind a boss on the tube seat, a first laser chip LD1 and a second laser chip LD2 are respectively arranged on the first heat sink and the second heat sink, an LD1 chip for emitting laser and an LD2 chip for receiving laser are packaged on the same plane, and the LD1 chip and an emergent ridge of the LD2 chip are coaxial within a certain space range. The packaging structure and the packaging method are simple in structure, easy to realize and low in production cost.
Description
Technical Field
The invention relates to the technical field of semiconductor laser packaging, in particular to a semiconductor laser packaging structure and a packaging method.
Background
The semiconductor laser is a type of laser with early maturity and rapid progress, and has the advantages of wide wavelength range, simple manufacture, low cost, easy mass production, small volume, light weight and long service life, so that the variety development is rapid, and the application range is wide and exceeds 300 types. The most important application area of the semiconductor laser is a Gb local area network, a semiconductor laser with a wavelength of 850nm is suitable for a 1Gb local area network, and a semiconductor laser with a wavelength of 1260nm to 1650nm is suitable for a 10Gb local area network system. The application range of the semiconductor laser covers the whole optoelectronics field, and since the advent of the semiconductor laser, the semiconductor laser has obtained extensive attention and research in all countries of the world, becomes the laser which has the fastest development in the world, has the most wide application range, and has the earliest output from a laboratory to realize commercialization and has the largest output value, and becomes the core technology of the current optoelectronics science.
The development of the Chinese optical communication device market has already entered the golden period, and for the core device semiconductor lasers of optical modules, the annual demand of the semiconductor lasers reaches tens of millions or more, the market prospect is optimistic, the capacity is huge, and the manufacturing process of the devices is necessarily required to be processed and manufactured through a packaging process. The general flow of a conventional TO package with monitor current is as follows: 1. firstly, a silver paste die bonding PD cushion block is arranged on a TO tube seat on a PD die bonding machine, then a silver paste die bonding PD chip is arranged on a PD cushion block on another PD die bonding machine, and the PD cushion block is baked and cured TO finish the packaging of a PD procedure; 2. eutectic LD heat sink and LD chip on LD eutectic machine; 3. and (5) sending the product prepared above TO wire bonding and capping, and thus completing the short packaging of the TO. In the packaging process, an LD laser chip is combined with a PD photodiode for packaging. The front light of the LD laser chip is used for laser transmission, and the backlight surface is responsible for receiving laser by the PD photodiode and generating corresponding current, so that the front light output power of the LD laser is indirectly monitored.
Disclosure of Invention
The invention aims to provide a semiconductor laser packaging structure and a packaging method, which have the advantages of simple structure, easy realization and low production cost.
In order to achieve the above purpose, the invention adopts the following technical scheme: the utility model provides a semiconductor laser packaging structure, includes the tube socket of installing the pin, preceding, the back is provided with first heat sink and second heat sink on the boss on the tube socket, be provided with first laser chip LD1 and second laser chip LD2 on first heat sink and the second heat sink respectively for the LD1 chip and the LD2 chip encapsulation that is used for receiving laser that send out are on the coplanar, just the light-emitting ridge of LD1 chip and LD2 chip is coaxial in certain spatial range.
Further, the positive electrode of the LD2 chip is connected with the third pin, the negative electrode of the LD2 chip is connected with the second pin, the positive electrode of the LD1 chip is connected with the second pin, and the negative electrode of the LD1 chip is connected with the fourth pin.
Further, the coaxiality error of the light-emitting ridge of the LD1 chip and the light-emitting ridge of the LD2 chip is not more than +/-40 um.
The invention also provides a semiconductor laser packaging method, which comprises the following steps:
step 1) eutectic first heat sink and first laser chip LD1 at the set position on boss on tube base;
Step 2) eutectic-forming a second heat sink and a second laser chip LD2 at a set position in front of the first heat sink and the LD1 chip on the boss, and ensuring that light emergent ridge strips of the LD1 chip and the LD2 chip are coaxial within a certain space range;
step 3) performing wire bonding, namely bonding the anode of the LD2 chip on the third pin, bonding the cathode of the LD2 chip on the second pin, and bonding the LD1 chip in a conventional manner, namely bonding the anode of the LD1 chip on the second pin and bonding the cathode of the LD1 chip on the fourth pin.
Further, the backlight current is increased by reducing the coaxiality error and the distance between the LD1 chip and the LD2 chip so as to meet the monitoring requirement.
Compared with the prior art, the invention has the following beneficial effects: the structure is characterized in that the PD chip is not used in the packaging process, the LD chip is used for coaxial packaging, the LD chip used for emitting light is arranged in front, and the LD chip used for realizing the function of the original PD chip is arranged behind, so that the stimulated absorption of the LD chip is utilized to realize photoelectric conversion to generate current.
Drawings
Fig. 1 is a schematic diagram of a package structure according to an embodiment of the invention.
Fig. 2 is a diagram showing a test effect of a package structure according to an embodiment of the present invention.
Detailed Description
The invention will be described in further detail with reference to the accompanying drawings and specific examples.
The invention provides a semiconductor laser packaging structure suitable for packaging products such as TO-56, TO-46, TO-38 and the like, which uses an LD chip TO replace a PD chip TO realize the monitoring of backlight current. As shown in fig. 1, the package structure includes a tube base 5 with a pin, a boss 6 on the tube base 5 is provided with a first heat sink 7 and a second heat sink 8 at the front and back, the first heat sink and the second heat sink are respectively provided with a first laser chip LD1 and a second laser chip LD2, the LD1 chip for emitting laser and the LD2 chip for receiving laser are packaged on the same plane, and the LD1 chip and the light-emitting ridge of the LD2 chip are coaxial within a certain space range.
In order to keep the final test performance of the two LD chips consistent with the existing package, in particular in terms of pin definition, the anode of the LD2 chip is connected to the third pin 3, the cathode of the LD2 chip is connected to the second pin 2, the anode of the LD1 chip is connected to the second pin 2, and the cathode of the LD1 chip is connected to the fourth pin 4.
Wherein, the coaxiality error of the light-emitting ridge of the LD1 chip and the LD2 chip is not more than +/-40 um. The invention develops eutectic on the existing eutectic machine, the precision of the existing eutectic machine is X, Y um plus or minus 20um, the precision of the existing eutectic machine is actually plus or minus 15um, the Z axis is the same tube seat plane, the same heat sink is used, the Z axis is coaxial within plus or minus 20um, and the coaxial requirement is met.
In the original packaging structure based on the LD and the PD chip, the test backlight current is mainly determined by the coaxiality between the LD and the PD, the size and the responsivity of the PD photosensitive surface and the size of the LD backlight, and the backlight current of the PD chip (when the working condition of the LD chip is if=ith+20mA) is generally controlled to be 100-1000uA according to the requirement. Fig. 2 is a test effect diagram of the package structure of the present invention, which is a typical TO packaged laser characteristic, where the Im line corresponds TO the value of the right coordinate axis Im, and the parameter shows that the current of the LD2 chip (when the working condition of the LD1 chip is if=ith+20ma) is about 260uA, which meets the parameter design requirement of the TO laser.
In order to ensure that two LD chips are not interfered with each other on the package, the outer diameter size of a suction nozzle of a packaged eutectic machine is changed from the conventional 300um to less than or equal to 250um (the size of the LD chip is 250 um), and the protruding part in the suction nozzle eutectic process is reduced so as to prevent interference to the eutectic position of the other LD chip close to the suction nozzle.
The invention also provides a semiconductor laser packaging method, which comprises the following steps:
step 1) eutectic the first heat sink and the first laser chip LD1 at set positions on the boss on the header.
Step 2) eutectic a second heat sink and a second laser chip LD2 at a set position in front of the first heat sink and the LD1 chip on the boss, and ensure that light emergent ridge strips of the LD1 chip and the LD2 chip are coaxial within a certain space range. In the process, the backlight current is increased by reducing the coaxiality error and the distance between the LD1 chip and the LD2 chip so as to meet the monitoring requirement.
Step 3) performing wire bonding, namely bonding the anode of the LD2 chip on the third pin, bonding the cathode of the LD2 chip on the second pin, and bonding the LD1 chip in a conventional manner, namely bonding the anode of the LD1 chip on the second pin and bonding the cathode of the LD1 chip on the fourth pin.
The above is a preferred embodiment of the present invention, and all changes made according to the technical solution of the present invention belong to the protection scope of the present invention when the generated functional effects do not exceed the scope of the technical solution of the present invention.
Claims (3)
1. The semiconductor laser packaging structure comprises a tube seat provided with a pin, and is characterized in that a boss on the tube seat is provided with a first heat sink and a second heat sink at the front and the back, the first heat sink and the second heat sink are respectively provided with a first laser chip LD1 and a second laser chip LD2, an LD1 chip for emitting laser and an LD2 chip for receiving laser are packaged on the same plane, and the LD1 chip and an emergent ridge of the LD2 chip are coaxial within a certain space range;
the positive electrode of the LD2 chip is connected with the third pin, the negative electrode of the LD2 chip is connected with the second pin, the positive electrode of the LD1 chip is connected with the second pin, and the negative electrode of the LD1 chip is connected with the fourth pin;
The semiconductor laser packaging method for realizing the semiconductor laser packaging structure comprises the following steps:
step 1) eutectic first heat sink and first laser chip LD1 at the set position on boss on tube base;
Step 2) eutectic-forming a second heat sink and a second laser chip LD2 at a set position in front of the first heat sink and the LD1 chip on the boss, and ensuring that light emergent ridge strips of the LD1 chip and the LD2 chip are coaxial within a certain space range;
step 3) performing wire bonding, namely bonding the anode of the LD2 chip on the third pin, bonding the cathode of the LD2 chip on the second pin, and bonding the LD1 chip in a conventional manner, namely bonding the anode of the LD1 chip on the second pin and bonding the cathode of the LD1 chip on the fourth pin.
2. The semiconductor laser package structure according to claim 1, wherein the coaxiality error of the light-emitting ridge of the LD1 chip and the LD2 chip is not more than ±40um.
3. The semiconductor laser package structure according to claim 1, wherein the backlight current is increased by reducing the coaxiality error and the pitch of the LD1 chip and the LD2 chip to meet the monitoring requirement.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910785087.0A CN110459954B (en) | 2019-08-23 | 2019-08-23 | Semiconductor laser packaging structure and packaging method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910785087.0A CN110459954B (en) | 2019-08-23 | 2019-08-23 | Semiconductor laser packaging structure and packaging method |
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| Publication Number | Publication Date |
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| CN110459954A CN110459954A (en) | 2019-11-15 |
| CN110459954B true CN110459954B (en) | 2024-06-07 |
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| CN201910785087.0A Active CN110459954B (en) | 2019-08-23 | 2019-08-23 | Semiconductor laser packaging structure and packaging method |
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Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN111786256B (en) * | 2020-08-26 | 2021-10-29 | 广东瑞谷光网通信股份有限公司 | TO-can packaging structure of light emitting laser and packaging method thereof |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001345507A (en) * | 2000-06-01 | 2001-12-14 | Rohm Co Ltd | Semiconductor laser and optical pickup |
| EP1624541A1 (en) * | 2004-08-06 | 2006-02-08 | Arima Optoelectronics Corporation | Laser diode device |
| CN106785904A (en) * | 2017-01-17 | 2017-05-31 | 中国科学院福建物质结构研究所 | A kind of DFB semiconductor laser preparation method and laser |
| CN109994926A (en) * | 2017-12-29 | 2019-07-09 | 西安华为技术有限公司 | A kind of chip of laser, light emission component, optical module and the network equipment |
| CN210577010U (en) * | 2019-08-23 | 2020-05-19 | 福州中科光芯科技有限公司 | Semiconductor laser packaging structure |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4031605B2 (en) * | 2000-03-13 | 2008-01-09 | ローム株式会社 | Surge-protected semiconductor laser and optical pickup |
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- 2019-08-23 CN CN201910785087.0A patent/CN110459954B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001345507A (en) * | 2000-06-01 | 2001-12-14 | Rohm Co Ltd | Semiconductor laser and optical pickup |
| EP1624541A1 (en) * | 2004-08-06 | 2006-02-08 | Arima Optoelectronics Corporation | Laser diode device |
| CN106785904A (en) * | 2017-01-17 | 2017-05-31 | 中国科学院福建物质结构研究所 | A kind of DFB semiconductor laser preparation method and laser |
| CN109994926A (en) * | 2017-12-29 | 2019-07-09 | 西安华为技术有限公司 | A kind of chip of laser, light emission component, optical module and the network equipment |
| CN210577010U (en) * | 2019-08-23 | 2020-05-19 | 福州中科光芯科技有限公司 | Semiconductor laser packaging structure |
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| CN110459954A (en) | 2019-11-15 |
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