CN109994926A - A kind of chip of laser, light emission component, optical module and the network equipment - Google Patents
A kind of chip of laser, light emission component, optical module and the network equipment Download PDFInfo
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
- H01S5/125—Distributed Bragg reflector [DBR] lasers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
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- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
Abstract
This application provides a kind of chip of laser, light emission component, optical module and the network equipments, the chip of laser includes: laser and monitor photo-diode, and laser and monitor photo-diode are single chip integrated integral structure, the active layer same layer setting of laser and monitor photo-diode；It is electrically isolated between laser and monitor photo-diode；Wherein, laser includes gain region and at least one optical grating reflection area, is electrically isolated between gain region and each optical grating reflection area, and the fraction of laser light that gain region emits is transmitted to monitor photo-diode by least one optical grating reflection area；Alternatively, being equipped with second groove between laser and monitor photo-diode, and it is electrically isolated by second groove, the fraction of laser light of laser transmitting is transmitted to monitor photo-diode.In the above-mentioned technical solutions, by using laser and monitor photo-diode single-chip integration, to reduce the cost of entire chip of laser, and the output power of chip of laser is improved.
Description
Technical Field
The application relates to the technical field of communication, in particular to a laser chip, an optical transmission assembly, an optical module and network equipment.
Background
With the rapid popularization of internet video applications, the continuous development of high-bandwidth services such as 4K/8K high definition, home cloud, video call and the like, and the continuous increase of bandwidth requirements of users, PON (Passive Optical Network ) gradually replaces copper wire broadband access to become a mainstream technology of a fixed access Network. A PON system typically comprises an OLT (Optical Line termination) located at a Central Office (CO), an ODN (Optical distribution Network) for branching/coupling or multiplexing/demultiplexing, and several ONUs (Optical Network units). By passive optical network is meant that the ODN between the OLT and the ONU does not have any active electronics. Generally, the downlink adopts a time division multiplexing broadcast mode, the uplink adopts a time division multiple access mode, and topological structures such as tree type, star type, bus type and the like can be flexibly formed. The typical structure is a tree structure, each ONU/ONT can share the optical fiber between the OLT and the optical splitter, the laying amount of the optical fiber is saved, the service transparency is better, the optical fiber can be used for signals of any system and speed in principle, and the network expansion and maintenance are easy. As a key component in the optical network, the optical modules in the OLT and the ONU perform the tasks of performing optical-electrical conversion and transmission on network signals, which is the basis for the normal communication of the entire network. An important component in the Optical module is an Optical Transmitter Optical Subassembly (TOSA for short), and the TOSA is used for converting an electrical signal into an Optical signal and inputting the Optical signal into an Optical fiber network for transmission. The TOSA is generally packaged in a coaxial TO-CAN form, a typical TO-CAN is assembled by a metal base with pins and a tube cap with a lens, and a signal light source (a laser chip, DML or EML) and a monitoring detector for optical communication are placed on the metal base according TO a certain form. The main optical components in current commercial TOSAs include a discrete Laser Diode (LD) and a discrete Monitoring Photodetector (MPD). Multiple chip mounting processes are required by adopting discrete device chip packaging, and alignment processes are required for optical coupling of the LD and the MPD, so that certain manufacturing cost is increased. Monolithic integrated devices of LD and MPD (Monitor photodiodes) can overcome the problems in the above discrete devices, significantly reduce the packaging cost of the devices and improve the stability of the devices. The most intuitive integration mode of LD and monitor photodiode is that the monitor photodiode is integrated at one end of LD by monolithic integration technology, and light is output through the other end. In order to reduce the influence of the end face phase on the single-mode yield of the device, antireflection films are generally plated at both ends of the integrated device. However, because the two ends of the integrated device are both plated with the anti-reflection film, the output optical power is small, and the requirement of high output optical power budget of the PON is difficult to meet. Because the monitoring photodiode is directly integrated at one end of the LD, the optical power entering the LD is larger, and the monitoring photodiode with longer cavity length is needed to ensure that the monitoring photodiode works in a linear region, thereby increasing the cost of an integrated device.
Disclosure of Invention
The application provides a laser chip, a light emitting component, an optical module and network equipment, which are used for realizing high-power work of the laser chip and reducing the cost of the laser chip.
In a first aspect, a laser chip is provided, which includes: the monitoring device comprises a laser and a monitoring photodiode, wherein the laser and the monitoring photodiode are of a monolithic integrated structure, and active layers of the laser and the monitoring photodiode are arranged on the same layer; the laser is electrically isolated from the monitor photodiode; wherein,
the laser comprises a gain area and at least one grating reflection area, the gain area is electrically isolated from each grating reflection area, and the at least one grating reflection area transmits part of laser emitted by the gain area to the monitoring photodiode; and the grating reflection area can reflect the rest laser, so that the light emitting power of the laser is increased, and the single-mode yield is improved.
Or a second groove is arranged between the laser and the monitoring photodiode, the second groove is electrically isolated, and part of laser emitted by the laser is transmitted to the monitoring photodiode.
In the technical scheme, the cost of the whole laser chip is reduced, and the output power of the laser chip is improved, so that the laser chip can be suitable for high-power operation.
In a specific embodiment, the laser includes a first grating reflection region, a gain region and a second grating reflection region, which are sequentially and electrically isolated from each other, and the monitor photodiode is located on a side of the second grating reflection region that is away from the gain region.
In a specific embodiment, the active layer is provided with a plurality of first trenches arranged at intervals, and the first grating reflection region, the gain region, the second grating reflection region and the monitor photodiode are electrically isolated by the first trenches. The electrical isolation among the first grating reflection region, the gain region, the second grating reflection region and the monitoring photodiode is realized through the trench. In a specific arrangement, the first trenches have a width of 10 to 30 microns and a depth of 0.1 to 1 micron.
In a specific embodiment, the first trench is filled with protons or inert ions. The isolation effect during electrical isolation is further improved by injecting inert ions into the first groove, and the isolation resistance is larger than 10 kilo ohms.
In a particular embodiment, the inert ions are protons or helium ions, further enhancing the electrical isolation effect.
In a specific embodiment, the monitor photodiode has a length greater than 5 microns and less than 50 microns.
In a specific embodiment, the length of the second grating reflective region is greater than 100 microns.
In a specific embodiment, the length of the first grating reflective region is less than 100 microns.
In a specific embodiment, the reflectivity of the reflective region of the first grating should be less than 30% and the reflectivity of the reflective region of the second grating should be greater than 80%.
In a specific embodiment, the gratings of the first grating reflection area and the second grating reflection area are uniform gratings, and can be manufactured by a holographic exposure method suitable for mass production.
In a specific embodiment, the grating period of the first grating reflection region and the grating period of the second grating reflection region are the same, and the grating period is between 195nm and 215nm or 235nm and 250 nm.
In a specific embodiment, the gain region has a grating, and the grating period of the gain region is the same as the grating period of the first grating reflective region and the second grating reflective region.
In a specific embodiment, the laser comprises: a gain region and a second grating reflection region;
the monitoring photodiode is positioned on one side of the second grating reflection area far away from the gain area;
the laser chip further comprises an electroabsorption modulator;
the electroabsorption modulator is located on one side of the gain region away from the monitor photodiode and is electrically isolated from the gain region. In this embodiment, the laser chip light extraction efficiency is greater than 0.25 mW/mA.
In a specific embodiment, the electroabsorption modulator has a length of 75 to 250 microns.
In a specific embodiment, the facet of the electroabsorption modulator is coated with an anti-reflective coating.
In a specific embodiment, the laser chip further comprises a semiconductor optical amplifier; the semiconductor optical amplifier is positioned on one side of the electroabsorption modulator, which is far away from the gain area, and is electrically isolated from the electroabsorption modulator; the active layer of the semiconductor optical amplifier and the active layer of the multi-section distributed feedback/distributed Bragg laser of the passive grating are arranged on the same layer.
In a specific embodiment, the cavity surface of the semiconductor optical amplifier is coated with an antireflection film. And in a particular arrangement, the length of the amplifier is from 50 microns to 300 microns.
In a specific embodiment, the laser is a distributed feedback/distributed bragg laser with a quarter-wave phase shift grating. In this embodiment, the laser chip light extraction efficiency is greater than 0.15 mW/mA.
In a specific embodiment, the second trench extends through a multiple quantum well layer of the distributed feedback laser of the quarter-wave phase shift grating.
In a particular embodiment, the cross-section of the second groove is an inverted isosceles trapezoid groove.
In a specific embodiment, the width of the bottom surface of the second trench is 2 to 100 μm, and the inclination angle of the trapezoidal bottom deviates from a right angle by more than 4 degrees.
In a specific embodiment, the second trench is filled with inert particles. The isolation effect during isolation is further improved.
In a particular embodiment, the inert particles are proton or deuterium particles. Further improving the electric isolation effect.
In a second aspect, there is provided a light emitting assembly comprising a laser chip as described in any one of the above.
In the technical scheme, the multi-section distributed feedback/distributed Bragg laser adopting the passive grating or the distributed feedback laser adopting the quarter-wavelength phase shift grating is monolithically integrated with the monitoring photodiode, so that the cost of the whole laser chip is reduced, and the output power of the laser chip is improved.
In a third aspect, there is provided a light module comprising the laser chip of any one of the above or the above light emitting assembly.
In the technical scheme, the multi-section distributed feedback/distributed Bragg laser adopting the passive grating or the distributed feedback laser adopting the quarter-wavelength phase shift grating is monolithically integrated with the monitoring photodiode, so that the cost of the whole laser chip is reduced, and the output power of the laser chip is improved.
In a fourth aspect, a network device is provided, where the network device includes the optical module described above, and the network device is an optical line terminal or a network unit.
In a fifth aspect, a passive optical network system is provided, where the passive optical network system includes an optical line terminal and an optical network unit, and at least one of the optical line terminal and the optical network unit includes the optical module.
In the technical scheme, the multi-section distributed feedback/distributed Bragg laser adopting the passive grating or the distributed feedback laser adopting the quarter-wavelength phase shift grating is monolithically integrated with the monitoring photodiode, so that the cost of the whole laser chip is reduced, and the output power of the laser chip is improved.
Drawings
Fig. 1 is a schematic structural diagram of a laser chip according to an embodiment of the present disclosure;
FIG. 2 is a graph showing the relationship between the length of the grating reflective region and the reflectivity of the laser chip shown in FIG. 1;
fig. 3 is a schematic structural diagram of another laser chip provided in an embodiment of the present application;
fig. 4 is a schematic structural diagram of another laser chip provided in an embodiment of the present application;
fig. 5 is a schematic structural diagram of another laser chip provided in an embodiment of the present application;
fig. 6 is a schematic structural diagram of another laser chip provided in an embodiment of the present application;
fig. 7 is a diagram illustrating a relationship between a back reflectivity of a monitor photodiode and a width of a second trench according to an embodiment of the present disclosure;
fig. 8 is a graph illustrating the relationship between the monitor photodiode photocurrent and the laser output power according to an embodiment of the present disclosure.
Detailed Description
In order to make the objects, technical solutions and advantages of the present application clearer, the present application will be described in further detail with reference to the accompanying drawings, and it is obvious that the described embodiments are only a part of the embodiments of the present application, and not all embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present application.
For the convenience of understanding the laser chip provided in the embodiments of the present application, the following detailed description is provided with reference to the accompanying drawings and specific embodiments, and first, as shown in fig. 1 and fig. 6, the laser chip provided in the embodiments of the present application includes two parts, respectively: a laser and a monitor photodiode 20. The laser comprises a gain area 12 and at least one grating reflection area, wherein the gain area 12 is electrically isolated from each grating reflection area, and the at least one grating reflection area transmits part of laser light emitted by the gain area 12 to a monitoring photodiode 20; alternatively, a second trench 36 is provided between the laser and the monitor photodiode 20, and is electrically isolated by the second trench 36, and a part of the laser light emitted by the laser is transmitted to the monitor photodiode 20. In a specific configuration, the laser may be a passive grating distributed feedback/distributed bragg laser 10 or a quarter-wavelength phase shift grating distributed feedback laser 80, and a laser emitted by the laser is partially transmitted to the monitor photodiode. The laser shown in fig. 1 is a passive grating multi-segment distributed feedback/distributed bragg laser 10; while the laser shown in figure 5 is a distributed feedback laser 80 of a quarter-wave phase shifted grating. However, in any of the above-mentioned lasers, the laser and the monitor photodiode 20 are fabricated in a monolithic integration manner during fabrication, wherein the active layer 30 of the laser and the monitor photodiode 20 are disposed in the same layer, and during the specific configuration, the laser and the monitor photodiode 20 are electrically isolated from each other.
As shown in fig. 1 and 5, when different lasers are used as the lasers, the structure of the corresponding whole laser chip is also different, and the following detailed structural description is respectively made on the laser chip provided in the embodiment of the present application with reference to the drawings.
First, a laser chip structure of a multi-segment dfb/dbr laser 10 using a passive grating for a laser is described, which includes a two-part passive grating multi-segment dfb/dbr laser 10 and a monitor photodiode 20.
When specifically arranged, the multi-section distributed feedback/distributed bragg laser 10 of the passive grating comprises a multi-layer structure, as shown in fig. 1, which comprises an active layer 30, a mqw layer 40 inserted in the active layer 30, and separate confinement layers 50 respectively arranged at two sides of the mqw layer 40; in a specific configuration, the multi-segment direct confinement laser may not include the separate confinement layer 50, and as in the structure shown in fig. 3, the multi-segment direct confinement laser includes the active layer 30 and the mqw layer 40 disposed in the active layer 30. And no matter the multi-sectional distributed feedback/distributed bragg laser 10 adopts the structure as shown in fig. 1 or fig. 3, the multi-sectional distributed feedback/distributed bragg laser 10 includes three parts according to the function, taking the placement direction of the laser chip shown in fig. 1 as the reference direction, from left to right, the three parts are respectively: the first grating reflection area 11, the gain area 12, the second grating reflection area 13 of the second grating reflection area, and the monitor photodiode 20 are close to the second grating reflection area 13 of the second grating reflection area, and all parts share the same active layer 30 to form an integrated device. The first grating reflection area 11 and the second grating reflection area 13 both adopt uniform gratings, so that the holographic exposure method suitable for mass production can be used for manufacturing, and when the holographic exposure method is specifically set, the grating period is 195nm to 215nm or 235nm to 250 nm. In a specific configuration, the gain region 12 may have a grating or may not have a grating, and when having a grating, the grating period of the gain region 12 is the same as the grating periods of the first grating reflection region 11 and the second grating reflection region 13. And the laser is a distributed feedback semiconductor laser when the gain region 12 has a grating, and a distributed bragg laser when the gain region 12 has no grating.
In a specific arrangement, the electrical isolation between the first grating reflective region 11, the gain region 12, and the second grating reflective region 13 and the monitor photodiode 20 is achieved by etching and ion implantation. As shown in fig. 1, the active layer 30 is provided with a plurality of three first trenches, which are respectively the first trench a31, the first trench b32 and the first trench c33, and the arrangement order of the first trenches from left to right with the placement direction of the laser chip shown in fig. 1 as a reference direction is: a first grating reflective region 11, a first trench a31, a gain region 12, a first trench b32, a second grating reflective region 13, a first trench c33, and a monitor photodiode 20; the arrangement of the three zones and the monitor photodiode 20 is: a first grating reflection area 11, a gain area 12, a second grating reflection area 13 and a monitor photodiode 20; and the electrical isolation of the first grating reflection region 11, the gain region 12, the second grating reflection region 13 and the monitor photodiode 20 is realized by the three first trenches. As shown in fig. 1, the first trench a31 electrically isolates the first grating reflective region 11 from the gain region 12, the first trench b32 electrically isolates the gain region 12 from the second grating reflective region 13, and the first trench c33 electrically isolates the second grating reflective region 13 from the monitor photodiode 20.
In the specific arrangement of the first trench a31, the first trench b32, and the first trench c33, as can be seen from fig. 1, the depths of the first trench a31, the first trench b32, and the first trench c33 do not reach the mqw layer 40, and in a specific arrangement, the width of the first trench is 10 to 30 micrometers (e.g., 10 micrometers, 15 micrometers, 20 micrometers, 30 micrometers), and the depth is 0.1 to 1 micrometer (e.g., 0.1 micrometer, 0.4 micrometer, 0.8 micrometer, 1 micrometer). And in order to improve the isolation effect, protons or inert ions are injected into the first trench, so that the isolation resistance is greater than 10 kilo-ohms, the inert particles are specifically helium, neon or argon ions and the like, and in the integrated device, the first grating reflection region 11 and the second grating reflection region 13 are both used as passive optical grating reflection regions. That is, only the gain region 12 injects current during operation, and neither the first grating reflective region 11 nor the second grating reflective region 13 injects current. Because the pumping current density of the gain region 12 is high and the photon density in the cavity is high, the first grating reflection region 11 and the second grating reflection region 13 can work in a transparent carrier state, and the loss (about 20cm < -1 >) of the first grating reflection region 11 and the second grating reflection region 13 is much smaller than the gain (100cm < -1 >) of the first grating reflection region 11 and the second grating reflection region 13. By controlling the lengths of the first grating reflective region 11 and the second grating reflective region 13 and the pumping current of the active layer 30, the first grating reflective region 11 and the second grating reflective region 13 can achieve a larger reflectivity, as shown in fig. 2, which is a relationship between the peak reflectivity of the grating reflective region and the grating length. As can be seen from fig. 2, as the lengths of the first grating reflective area 11 and the second grating reflective area 13 increase, the corresponding reflectivities also increase.
In order to obtain large light output power, the reflectivity of the first grating reflection region 11 should be less than 30%, usually less than 5%, and an anti-reflection film is plated at the front end of the gain region 12; the reflectivity of the second grating reflective area 13 is greater than 80%, so that 20% of the laser light of the gain area 12 penetrates through the second grating reflective area 13 into the monitor photodiode 20. The rear end face of the gain region 12 can be equivalently plated with a high reflection film due to the second grating reflection region 13 and the monitoring photodiode 20, the length of the monitoring photodiode 20 is controlled, and light of the rear end face can be absorbed by the monitoring photodiode 20, so that the influence of the phase of the rear end face on the single-mode characteristic of the laser can be eliminated, the single-mode yield of the device can be close to 100%, and the film plating cost of the rear end face is saved. In order to further improve the absorption effect. In a particular embodiment, the length of the first grating reflective area 11 is less than 100 microns. The gain region 12 is greater than 50 microns and less than 200 microns in length. Preferably, the length of the second grating reflective area 13 is greater than 100 microns. And the length of the monitor photodiode 20 is typically greater than 5 microns and less than 50 microns. Such as: the length of the first grating reflection region 11 is 90 micrometers, the length of the gain region 12 is 100 micrometers, the length of the second grating reflection region 13 is 150 micrometers, and the length of the monitor diode 20 is 150 micrometers.
The integrated device provided by the embodiment of the application fully combines the advantages of the distributed feedback Bragg laser and the DFB laser, the single-mode characteristic of the laser is insensitive to the face phase, high single-mode yield and high-power work can be realized at the same time, and the size of the light output power can be monitored at the same time.
The length of the first grating reflection area 11 is controlled, so that the mirror loss of the laser becomes small, and the threshold gain is reduced; since the relaxation oscillation frequency of the laser is inversely proportional to the root of the volume of the active layer 30, a large modulation bandwidth (greater than 50 microns and less than 200 microns) can be realized by using the short gain region 12, and the embodiment of the present application is not only applicable to 10G PONs but also applicable to NG-PON 2.
As can be seen from the above description, when a laser chip is manufactured, since the passive grating multi-segment distributed feedback/distributed bragg laser 10 is a laser diode and the monitor photodiode 20 is also a diode structure, when the laser chip is manufactured, monolithic integration is performed, and the two devices are electrically isolated by the first trench, so that the monolithic integration of the laser and the monitor photodiode 20 does not increase additional manufacturing difficulty and cost of the devices. The laser chip of the monolithic integrated backlight detector is used in the light emitting assembly, so that the cost of the light emitting assembly can be reduced respectively.
As shown in fig. 4, fig. 4 is a modified structure of the laser chip shown in fig. 1, and the structure of the laser chip shown in fig. 4 includes: the laser and the monitor photodiode 20, and the laser is a passive grating multi-section distributed feedback/distributed Bragg laser 10; the multi-segment distributed feedback/distributed bragg laser 10 of the passive grating includes: a gain region 12 and a second grating reflection region 13; and, when specifically arranged, the laser chip further comprises an electro-absorption modulator 60; wherein, the monitor photodiode 20 is located at a side of the second grating reflection region 13 away from the gain region 12; the electroabsorption modulator 60 is located on the side of the gain region 12 remote from the monitor photodiode 20 and is electrically isolated from the gain region 12. In particular fabrication, the electroabsorption modulator 60 has a length of 75 microns to 250 microns, such as 75 microns, 100 microns, 150 microns, 200 microns, 250 microns.
In the specific implementation of the isolation, as shown in fig. 4, the isolation is implemented by a first trench disposed on the active layer 30, and in the embodiment of the present application, three first trenches are disposed: the first trench d34, the first trench b32, and the first trench c33 are sequentially arranged from left to right with reference to the placement direction of the laser chip shown in fig. 4: an electro-absorption modulator 60, a first trench d34, a gain region 12, a first trench b32, a second grating reflective region 13, a first trench c33, and a monitor photodiode 20; wherein the first trench d34 isolates the electro-absorption modulator 60 from the gain region 12, and the first trench b32 isolates the gain region 12 from the second grating reflective region 13; the first trench c33 isolates the second grating reflective area 13 from the monitor photodiode 20.
When the first trench d34, the first trench b32, and the first trench c33 are specifically disposed, as can be seen from fig. 4, the depths of the first trench d34, the first trench b32, and the first trench c33 do not reach the multiple quantum well layer 40, and in order to improve the isolation effect, the first trench is filled with protons or inert ions, specifically helium, neon, or argon ions, and the like, in the laser chip provided in the embodiment of the present application, the electro-absorption modulator 60 is integrated at the front end of the dfb/dbr 10, and when specifically disposed, the cavity surface of the electro-absorption modulator 60 is plated with an anti-reflection film. Therefore, the front facet (front facet) phase has a substantially negligible effect on the single mode characteristics of the directly modulated laser; the influence of the back facet (front facet) phase on the single mode characteristics of the laser can also be eliminated due to the presence of the monitor photodiode 20 and the second grating reflective region 13. And the light emitting efficiency of the laser chip is more than 0.25 mW/mA.
As shown in fig. 5, fig. 5 shows another modified structure, and in the laser chip structure shown in fig. 5, the laser chip includes: a semiconductor optical amplifier 70, an electro-absorption modulator 60, a passive grating multi-section distributed feedback/distributed bragg laser 10 and a monitor photodiode 20. Wherein, in a specific embodiment, the laser chip further comprises a semiconductor optical amplifier 70; the semiconductor optical amplifier 70 is located on the side of the electroabsorption modulator 60 remote from the gain region 12 and is electrically isolated from the electroabsorption modulator 60. Wherein the length of the semiconductor optical amplifier 70 is 50 to 300 micrometers.
In a specific arrangement, the isolation of the components is achieved by first trenches, as shown in fig. 5, a plurality of first trenches are provided on the active layer 30: a first trench e35, a first trench d34, a first trench b32, and a first trench c 33; taking the laser chip placement direction shown in fig. 5 as a reference direction, from left to right, the following are performed in sequence: a semiconductor optical amplifier 70, a first trench e35, an electro-absorption modulator 60, a first trench d34, a gain region 12, a first trench b32, a second grating reflective region 13, a first trench c33, and a monitor photodiode 20; wherein the first trench separates the semiconductor optical amplifier 70 and the electro-absorption modulator 60, the first trench d34 separates the electro-absorption modulator 60 and the gain region 12, and the first trench b32 separates the gain region 12 and the second grating reflective region 13; the first trench c33 isolates the second grating reflective area 13 from the monitor photodiode 20.
In order to improve the isolation effect, the first trench is implanted with protons or inert ions, specifically helium, neon, argon, or the like.
As shown in fig. 4 and 5, to simplify the device manufacturing process, for the electro-absorption modulator 60 or the electro-absorption modulator 60/the semiconductor optical amplifier 70 and the electro-absorption modulator 60, the material of the active layer 30 of the semiconductor optical amplifier 70 is the same as that of the passive grating multi-segment dfb/dbr 10 and the electro-absorption modulator 60, and the material of the active layer 30 of the electro-absorption modulator 60 may be the same or different. For the integration of the electro-absorption modulator 60 and the monitor photodiode 20, in order to increase the light output power, it is generally required to optimize the multi-segment distributed feedback/distributed bragg laser 10 and the electro-absorption modulator 60 of the passive grating, and the materials of the active layer 30 of the multi-segment distributed feedback/distributed bragg laser 10 of the electro-absorption modulator 60 and the passive grating are different, and the integration of the two can be realized by adopting butt growth or selective area epitaxy.
As shown in fig. 6, fig. 6 shows another laser chip including a laser and a monitor photodiode 20; wherein the laser is a quarter-wavelength phase shift grating dfb laser 80, and the quarter-wavelength phase shift grating dfb laser 80 is electrically isolated from the monitor photodiode 20 by the second trench 36.
As shown in fig. 6, the laser chip is monolithically integrated by a distributed feedback laser 80 of a quarter-wave phase shift grating and a monitor photodiode 20, a second trench 36 is provided between the laser and the monitor photodiode 20, and is electrically isolated by the second trench 36, and a part of laser light emitted by the laser is transmitted to the monitor photodiode 20. The monitor photodiode 20 is close to the rear end region of the distributed feedback laser 80 of the quarter-wavelength phase shift grating, and the monitor photodiode 20 and the distributed feedback laser 80 of the quarter-wavelength phase shift grating share the same active layer 30 to form an integrated device. The light exit surface of the front end of the distributed feedback laser 80 of the quarter-wavelength phase shift grating is coated with an antireflection film, and the electrical isolation between the distributed feedback laser 80 of the quarter-wavelength phase shift grating and the monitor photodiode 20 is realized by etching through the active layer 30, as shown in fig. 6, a second trench 36 is etched on the active layer 30, and when the configuration is specific, the cross section of the second trench 36 is an inverted isosceles trapezoid trench. And when specifically arranged, the width of the bottom surface of the second trench 36 is 2 to 100 micrometers, such as 2 micrometers, 30 micrometers, 50 micrometers, 70 micrometers, 90 micrometers, 100 micrometers, and any width between 2 to 100 micrometers. Further, the trapezoid base inclination deviates from the right angle by more than 4 degrees, such as 10 degrees, 15 degrees, etc.
When the second trench 36 shown in fig. 6 is formed by dry etching, a typical waveguide angle formed by dry etching is about 10 degrees, and the reflection of the Rear facet of the distributed feedback laser 80 of the quarter-wavelength phase shift grating can be reduced, the reflection of the end facet of the monitoring photodiode 20 is related to the waveguide angle and the width of the isolation region, as shown in fig. 7, when β is 8 ℃, the reflectivity of the end facet of the monitoring photodiode 20 can be less than 0.1%, the larger the width, the lower the coupling efficiency, the larger β, the lower the coupling efficiency, the reflection (real facet) of the Rear facet of the monitoring photodiode 20 can be suppressed by increasing the length of the monitoring photodiode 20, since the whole integrated device can be equivalent to the distributed feedback laser 80 of the AR-AR quarter-wavelength phase shift grating, the single-mode yield can approach 100%, the cost of Rear facet coating is saved, and the laser chip light output efficiency is greater than 0.15 mW/mA.
The grating according to the present invention may be above the active layer 40 or below the active layer 40.
Fig. 8 is a graph of the calculated relationship between the photocurrent of the monitor photodiode 20 and the output power of the laser, and it can be seen that the two are in a linear relationship, which proves the effectiveness of the laser chip provided in the embodiment of the present application.
Furthermore, embodiments of the present application provide a light emitting assembly including the laser chip of any one of the above. The laser chip is integrally formed with the monitoring photodiode 20 by using the passive grating multi-section distributed feedback/distributed bragg laser 10 or the quarter-wavelength phase shift grating distributed feedback laser 80, so that the cost of the whole laser chip is reduced, and the output power of the laser chip is improved.
In addition, an embodiment of the present application provides an optical module, where the optical module includes any one of the foregoing optical modules, and the network device is an optical line terminal or an optical network unit. The laser chip is integrally formed with the monitoring photodiode 20 by using the passive grating multi-section distributed feedback/distributed bragg laser 10 or the quarter-wavelength phase shift grating distributed feedback laser 80, so that the cost of the whole laser chip is reduced, and the output power of the laser chip is improved.
In addition, an embodiment of the present application provides a passive optical network system network device, where the passive optical network system network device includes any one of the laser chips described above. The laser chip is integrally formed with the monitoring photodiode 20 by using the passive grating multi-section distributed feedback/distributed bragg laser 10 or the quarter-wavelength phase shift grating distributed feedback laser 80, so that the cost of the whole laser chip is reduced, and the output power of the laser chip is improved.
The integrated device scheme of the laser and the optical monitoring detector provided in the embodiment of the application can be applied to a passive optical network, especially a 10G PON sensitive to cost and the like, and is also applicable to optical modules of an optical transmission network and a data center. The monolithic integration of the laser and the optical monitoring detector can not only reduce the cost of the optical module, but also improve the stability and performance of the optical module.
The above description is only for the specific embodiments of the present application, but the scope of the present application is not limited thereto, and any person skilled in the art can easily conceive of the changes or substitutions within the technical scope of the present application, and shall be covered by the scope of the present application. Therefore, the protection scope of the present application shall be subject to the protection scope of the claims.
Claims (16)
1. A laser chip, comprising: the monitoring device comprises a laser and a monitoring photodiode, wherein the laser and the monitoring photodiode are of a monolithic integrated structure, and active layers of the laser and the monitoring photodiode are arranged on the same layer; the laser is electrically isolated from the monitor photodiode; wherein,
the laser comprises a gain area and at least one grating reflection area, the gain area is electrically isolated from each grating reflection area, and the at least one grating reflection area transmits part of laser emitted by the gain area to the monitoring photodiode; or,
and a second groove is arranged between the laser and the monitoring photodiode, and is electrically isolated through the second groove, and part of laser emitted by the laser is transmitted to the monitoring photodiode.
2. The laser chip of claim 1, wherein the laser comprises a first grating reflective region, the gain region and a second grating reflective region, which are sequentially and electrically isolated from each other, and the monitor photodiode is located on a side of the second grating reflective region away from the gain region.
3. The laser chip according to claim 1 or 2, wherein the active layer is provided with a plurality of first trenches arranged at intervals, and the first grating reflective region, the gain region, the second grating reflective region and the monitor photodiode are electrically isolated by the first trenches.
4. The laser chip of claim 3, wherein the first trench is implanted with protons or inert ions.
5. The laser chip of claim 3, wherein the gain region has a grating; and the grating period of the gain area is the same as the grating period of the first grating reflection area and the grating period of the second grating reflection area.
6. The laser chip of claim 3, wherein the gratings of the first and second grating reflective regions are uniform gratings.
7. The laser chip of claim 1, wherein the laser comprises: the gain region and the second grating reflection region;
the monitoring photodiode is positioned on one side of the second grating reflection area far away from the gain area;
the laser chip further comprises an electroabsorption modulator;
the electroabsorption modulator is located on one side of the gain region away from the monitor photodiode and is electrically isolated from the gain region.
8. The laser chip of claim 7, wherein the facets of the electro-absorption modulator are coated with an anti-reflective coating.
9. The laser chip according to claim 7 or 8, wherein the laser chip further comprises a semiconductor optical amplifier; the semiconductor optical amplifier is positioned on one side of the electroabsorption modulator, which is far away from the gain area, and is electrically isolated from the electroabsorption modulator;
the active layer of the semiconductor optical amplifier and the active layer of the multi-section distributed feedback/distributed Bragg laser of the passive grating are arranged on the same layer.
10. The laser chip of claim 1, wherein the laser is a distributed feedback laser of a quarter-wavelength phase shift grating.
11. The laser chip of claim 10, wherein the second trench extends through a MQW layer of the DFB laser of the quarter-wave phase shift grating.
12. The laser chip of claim 10, wherein the cross-section of the second trench is an inverted isosceles trapezoid trench.
13. The laser chip of claim 10, wherein the width of the bottom surface of the second trench is 2 to 100 microns.
14. A light emitting module comprising the laser chip according to any one of claims 1 to 13.
15. An optical module comprising a laser chip according to any one of claims 1 to 13 or a light emitting module according to claim 14.
16. A network device comprising the optical module according to claim 15, wherein the network device is an optical line terminal or an optical network unit.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711486328.9A CN109994926A (en) | 2017-12-29 | 2017-12-29 | A kind of chip of laser, light emission component, optical module and the network equipment |
| PCT/CN2018/107107 WO2019128341A1 (en) | 2017-12-29 | 2018-09-21 | Laser chip, light-emitting component, light module and network device |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201711486328.9A CN109994926A (en) | 2017-12-29 | 2017-12-29 | A kind of chip of laser, light emission component, optical module and the network equipment |
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| CN (1) | CN109994926A (en) |
| WO (1) | WO2019128341A1 (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110459954A (en) * | 2019-08-23 | 2019-11-15 | 福州中科光芯科技有限公司 | A kind of capsulation structure for semiconductor laser and packaging method |
| CN110534589A (en) * | 2019-08-15 | 2019-12-03 | 北京工业大学 | A kind of light emitting based on resonant cavity -- four-quadrant optical detection integrated chip |
| CN111600198A (en) * | 2020-05-26 | 2020-08-28 | 陕西源杰半导体技术有限公司 | Ultra-high-power laser for communication and preparation method thereof |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2023041171A1 (en) * | 2021-09-17 | 2023-03-23 | Huawei Technologies Co., Ltd. | Distributed feedback laser with integrated mpd |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5914977A (en) * | 1996-10-17 | 1999-06-22 | The Furukawa Electric Co., Ltd. | Semiconductor laser having a high-reflectivity reflector on the laser facets thereof, an optical integrated device provided with the semiconductor laser, and a manufacturing method therefor |
| US20050006654A1 (en) * | 2003-07-08 | 2005-01-13 | Byung-Kwon Kang | Semiconductor monolithic integrated optical transmitter |
| US20050128557A1 (en) * | 2003-12-16 | 2005-06-16 | In Kim | Electro-absorptive optical modulator module having monolithic integrated photo detector |
| US20070242919A1 (en) * | 2001-10-09 | 2007-10-18 | Infinera Corporation | MONOLITHIC TRANSMITTER PHOTONIC INTEGRATED CIRCUIT (TxPIC) WITH INTEGRATED OPTICAL COMPONENTS IN CIRCUIT SIGNAL CHANNELS |
| US20100260220A1 (en) * | 2009-03-26 | 2010-10-14 | Gideon Yoffe | Semiconductor laser device and circuit for and method of driving same |
| US20170237226A1 (en) * | 2016-02-17 | 2017-08-17 | TeraMod LLC | Temperature Insensitive Integrated Electro-Absorption Modulator and Laser |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58186986A (en) * | 1982-04-27 | 1983-11-01 | Kokusai Denshin Denwa Co Ltd <Kdd> | Distributed feedback semiconductor laser with monitor |
| US5103455A (en) * | 1990-05-09 | 1992-04-07 | Gte Laboratories Incorporated | Monolithically integrated semiconductor optical preamplifier |
| US8559478B2 (en) * | 2008-01-18 | 2013-10-15 | The Regents Of The University Of California | Hybrid silicon laser-quantum well intermixing wafer bonded integration platform for advanced photonic circuits with electroabsorption modulators |
| JP5257604B2 (en) * | 2009-01-29 | 2013-08-07 | セイコーエプソン株式会社 | Light emitting device |
-
2017
- 2017-12-29 CN CN201711486328.9A patent/CN109994926A/en active Pending
-
2018
- 2018-09-21 WO PCT/CN2018/107107 patent/WO2019128341A1/en active Application Filing
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5914977A (en) * | 1996-10-17 | 1999-06-22 | The Furukawa Electric Co., Ltd. | Semiconductor laser having a high-reflectivity reflector on the laser facets thereof, an optical integrated device provided with the semiconductor laser, and a manufacturing method therefor |
| US20070242919A1 (en) * | 2001-10-09 | 2007-10-18 | Infinera Corporation | MONOLITHIC TRANSMITTER PHOTONIC INTEGRATED CIRCUIT (TxPIC) WITH INTEGRATED OPTICAL COMPONENTS IN CIRCUIT SIGNAL CHANNELS |
| US20050006654A1 (en) * | 2003-07-08 | 2005-01-13 | Byung-Kwon Kang | Semiconductor monolithic integrated optical transmitter |
| US20050128557A1 (en) * | 2003-12-16 | 2005-06-16 | In Kim | Electro-absorptive optical modulator module having monolithic integrated photo detector |
| US20100260220A1 (en) * | 2009-03-26 | 2010-10-14 | Gideon Yoffe | Semiconductor laser device and circuit for and method of driving same |
| US20170237226A1 (en) * | 2016-02-17 | 2017-08-17 | TeraMod LLC | Temperature Insensitive Integrated Electro-Absorption Modulator and Laser |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110534589A (en) * | 2019-08-15 | 2019-12-03 | 北京工业大学 | A kind of light emitting based on resonant cavity -- four-quadrant optical detection integrated chip |
| CN110534589B (en) * | 2019-08-15 | 2020-11-27 | 北京工业大学 | Light emission-four-quadrant optical detection integrated chip based on resonant cavity |
| CN110459954A (en) * | 2019-08-23 | 2019-11-15 | 福州中科光芯科技有限公司 | A kind of capsulation structure for semiconductor laser and packaging method |
| CN110459954B (en) * | 2019-08-23 | 2024-06-07 | 福州中科光芯科技有限公司 | Semiconductor laser packaging structure and packaging method |
| CN111600198A (en) * | 2020-05-26 | 2020-08-28 | 陕西源杰半导体技术有限公司 | Ultra-high-power laser for communication and preparation method thereof |
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| WO2019128341A1 (en) | 2019-07-04 |
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