CN110459469B - 太阳能电池的烧结方法、制备方法、太阳能电池和烧结炉 - Google Patents
太阳能电池的烧结方法、制备方法、太阳能电池和烧结炉 Download PDFInfo
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- CN110459469B CN110459469B CN201811112644.4A CN201811112644A CN110459469B CN 110459469 B CN110459469 B CN 110459469B CN 201811112644 A CN201811112644 A CN 201811112644A CN 110459469 B CN110459469 B CN 110459469B
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic System
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
- H01L31/1868—Passivation
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
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CN201811112644.4A CN110459469B (zh) | 2018-09-25 | 2018-09-25 | 太阳能电池的烧结方法、制备方法、太阳能电池和烧结炉 |
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CN201811112644.4A CN110459469B (zh) | 2018-09-25 | 2018-09-25 | 太阳能电池的烧结方法、制备方法、太阳能电池和烧结炉 |
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CN114639754B (zh) * | 2020-12-15 | 2024-03-15 | 一道新能源科技股份有限公司 | 一种N-TOPCon电池及其烧结方法 |
CN113465402B (zh) * | 2021-06-21 | 2023-10-03 | 广东爱旭科技有限公司 | 降低烧结炉的炉温差异的控制方法和控制系统 |
CN115332390A (zh) * | 2022-08-12 | 2022-11-11 | 通威太阳能(安徽)有限公司 | 太阳能电池及其制备方法 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
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CN201837238U (zh) * | 2010-10-12 | 2011-05-18 | 东莞市科隆威自动化设备有限公司 | 光伏太阳能硅板烧结炉 |
CN102347377A (zh) * | 2010-07-29 | 2012-02-08 | 比亚迪股份有限公司 | 太阳能电池背电场、其制作方法和电池片及其制作方法 |
CN102916087A (zh) * | 2012-11-09 | 2013-02-06 | 上饶光电高科技有限公司 | 太阳能电池及其制作方法 |
CN107993940A (zh) * | 2017-10-31 | 2018-05-04 | 泰州隆基乐叶光伏科技有限公司 | p型太阳能电池的制备方法 |
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CN202973867U (zh) * | 2012-11-27 | 2013-06-05 | 西安大昱光电科技有限公司 | 一种太阳能电池片烧结炉的烧结区结构 |
CN207852709U (zh) * | 2017-12-27 | 2018-09-11 | 南通苏民新能源科技有限公司 | 一种太阳能电池烧结炉 |
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Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
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CN102347377A (zh) * | 2010-07-29 | 2012-02-08 | 比亚迪股份有限公司 | 太阳能电池背电场、其制作方法和电池片及其制作方法 |
CN201837238U (zh) * | 2010-10-12 | 2011-05-18 | 东莞市科隆威自动化设备有限公司 | 光伏太阳能硅板烧结炉 |
CN102916087A (zh) * | 2012-11-09 | 2013-02-06 | 上饶光电高科技有限公司 | 太阳能电池及其制作方法 |
CN107993940A (zh) * | 2017-10-31 | 2018-05-04 | 泰州隆基乐叶光伏科技有限公司 | p型太阳能电池的制备方法 |
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