CN110423985A - One kind reducing Sr in impulse laser deposition system2RuO4The method of film preparation temperature - Google Patents
One kind reducing Sr in impulse laser deposition system2RuO4The method of film preparation temperature Download PDFInfo
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- CN110423985A CN110423985A CN201910861462.5A CN201910861462A CN110423985A CN 110423985 A CN110423985 A CN 110423985A CN 201910861462 A CN201910861462 A CN 201910861462A CN 110423985 A CN110423985 A CN 110423985A
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- laser deposition
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/08—Oxides
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
- C23C14/28—Vacuum evaporation by wave energy or particle radiation
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Abstract
The invention discloses one kind, and Sr is reduced in impulse laser deposition system2RuO4The method of film preparation temperature, the invention belong to technical field of material.It is filled with nitrogen in impulse laser deposition system vacuum chamber, to realize the Sr for preparing high quality while reducing preparation temperature2RuO4Film.This method solve pulse laser deposition preparation Sr under traditional oxygen environment2RuO4Superelevation growth temperature problem required for film.Furthermore laser energy used in this method is lower, and simple process is high-efficient, strong operability.
Description
Technical field
The present invention relates to one kind, and Sr is reduced in impulse laser deposition system2RuO4The method of film preparation temperature, the invention
Belong to technical field of material.
Background technique
With the development of microelectronic industry, demand of the people to miniaturisation high-performance integrated-optic device increasingly increases, because
This needs to research and develop and prepares high performance thin-film material to meet the market demand.Sr2RuO4By feat of its changeable structure and excellent
Magnetics and electronic transport performance, become and study most popular one of electronic material instantly.Sr2RuO4It is a kind of while there is calcium
A kind of material of perovskite like structure and halite layer structure, its performance most outstanding are that have superconductivity at low temperature, are to have now been found that
The superconductors without copper few in number.Its resistivity is varied with temperature less, while being shown at room temperature
Excellent electric conductivity.In addition, Sr2RuO4Structure it is also highly stable in the high temperature environment, so being usually used in microelectronics and height
In the fields such as warm electrode.
Pulsed laser deposition technique is as a kind of advanced novel thin film preparation most popular in current world wide
Technology has been widely used in the preparation of high performance thin film material.Oxide is being prepared using pulsed laser deposition technique
It is usually all the sull for guaranteeing to obtain high quality using oxygen atmosphere when film.When using SrRuO3Target, benefit
Sr is prepared under oxygen atmosphere with pulsed laser deposition technique2RuO4When film, only when the temperature of preparation reach 1100 DEG C with
On, it can just prepare the Sr of high quality2RuO4Film.But the heating device of most of impulse laser deposition system is electric heating
Silk heating, is unable to satisfy and is heated to 900 DEG C or more of high temperature requirement.This problem makes in the pulsed laser deposition technique system of utilization
Standby Sr2RuO4Very big constraint is received when film.
Summary of the invention:
1. goal of the invention:
In order to solve the above technical problems, the purpose of the invention patent is to provide one kind to be reduced in impulse laser deposition system
Sr2RuO4The method of film preparation temperature can use SrRuO in impulse laser deposition system3Target is at a lower temperature
To prepare the Sr of high quality2RuO4Film solves pulse laser deposition preparation Sr under traditional oxygen environment2RuO4Required for film
Superelevation growth temperature problem.
2. technical solution:
One kind reducing Sr in impulse laser deposition system2RuO4The method of film preparation temperature, it is characterised in that in pulse
It is filled with nitrogen in laser deposition system vacuum chamber, prepares Sr in dynamic nitrogen atmosphere2RuO4Film.
Preferably, a kind of to reduce Sr in impulse laser deposition system2RuO4The method of film preparation temperature swashs pulse
Light deposition system vacuum chamber vacuumizes, and promotes heating device to specific temperature, then in pulse laser after reaching specific vacuum degree
It is filled with nitrogen in depositing system vacuum chamber, in dynamic nitrogen atmosphere, with pulsed laser ablation target, prepares Sr2RuO4Film.
Preferably, the specific vacuum degree is < 2 × 10-5Pa。
Preferably, the target is SrRuO3Target.
Preferably, the specific temperature is 800-900 DEG C
Preferably, being filled with nitrogen gas purity in the impulse laser deposition system vacuum chamber is > 99.99%.
Preferably, the dynamic nitrogen atmosphere air pressure is 1.0-30.0Pa.
Preferably, the laser light source of the pulse laser deposition is KrF excimer laser, optical maser wavelength 248nm, laser arteries and veins
Wide 10ns, specific laser energy density are 1.0J/cm2-4.0J/cm2Laser frequency is 1Hz-10Hz.
Prepare Sr2RuO4It is each in the plumage brightness formed after the required growth temperature of film and high energy laser ablation target
The kinetic energy of plasma is closely related.If the kinetic energy of the plasma in material prepared plumage brightness is very big, just need very
High growth temperature (i.e. underlayer temperature), therefore ensure that plasma reach substrate when can have enough energy be diffused and at
Core eventually forms high-quality thin film.SrRuO3This target is easier build-up of luminance under oxygen atmosphere, cause in plumage brightness it is each it is equal from
The kinetic energy of daughter is very big.So being grown under traditional oxygen atmosphere, it is necessary to very high temperature come guarantee plasma reach
Can there are enough temperature and energy when substrate and further spread and be nucleated to complete.On the contrary, if underlayer temperature is too low, it is made
The problems such as plasma can not be spread will occur in standby material, and cause the film that cannot be nucleated and crystallize.If using nitrogen atmosphere instead
Afterwards, will occur two kinds of plumage brightness (the plasma plume brightness of plumage brightness and nitrogen including target) during pulsed laser deposition.Wherein
The plasma plume brightness of nitrogen is larger, has wrapped up plumage brightness caused by target.Therefore, in the plasma of nitrogen and target plumage brightness etc.
Mutually collision occurs for gas ions, reduces the kinetic energy of various plasmas (especially Ru) in target plumage brightness to a certain extent,
So as to realize the Sr for successfully preparing high quality at a lower temperature2RuO4Film.
3. the utility model has the advantages that
Simple process of the invention, strong operability.In pulsed laser deposition technique, can in nitrogen atmosphere environment,
Utilize SrRuO3Target can prepare the Sr of high quality under 800 DEG C of lower temperature conditions2RuO4Film, it is ensured that it is micro-
There is very big application value in electric thin material and high-temperature electrode material.
Detailed description of the invention
Fig. 1 is in the oxygen atmosphere of 20Pa, the XRD schematic diagram for the film that heating device is prepared under the conditions of 800 DEG C.
Fig. 2 is in the nitrogen atmosphere of 20Pa, the XRD schematic diagram for the film that heating device is prepared under the conditions of 800 DEG C.
Specific embodiment
Below by embodiment, the present invention will be described in detail, these embodiments are only because the mesh that exemplary illustrates
, and it is not intended to limit the present invention.
One kind reducing Sr in impulse laser deposition system2RuO4The method of film preparation temperature, is deposited by pulse laser
Technology utilizes SrRuO3Target prepares Sr2RuO4Film.When vacuum chamber in impulse laser deposition system vacuum degree be 2 ×
10-5When Pa, the temperature of heating device is promoted to 800 DEG C, being then charged with purity is 99.99% nitrogen, by dynamic nitrogen pressure
Power is maintained 20Pa, prepares Sr in dynamic nitrogen atmosphere2RuO4Film.The laser light source of impulse laser deposition system when preparation
For KrF excimer laser, optical maser wavelength 248nm, laser pulse width 10ns, specific laser energy density is 1.0J/cm2-4.0J/
cm2, laser frequency 1Hz-10Hz.During the deposition process, since the plasma in the plumage brightness of nitrogen and target occurs mutually
Collision, reduces the kinetic energy of various plasmas in target plumage brightness, to a certain extent so as to successfully realize lower
At a temperature of prepare the Sr of high quality2RuO4Film.
According to the conventional method, when the vacuum degree in impulse laser deposition system vacuum chamber is 2 × 10-5When Pa, then to chamber
It is inside passed through oxygen, holding oxygen pneumatic is 20Pa.When the heating devices heat of pulsed laser deposition system (is less than to limiting temperature
900 DEG C) when, it can only obtain SrRuO3Film, as shown in Figure 1.Under 20Pa oxygen atmosphere, only the temperature of heating device is mentioned
When rising to 1100 DEG C, the Sr of high quality can be just obtained under same preparation condition2RuO4Film.
In the present embodiment, when the vacuum degree in impulse laser deposition system vacuum chamber is 2 × 10-5Pa, by intracavitary oxygen
Atmosphere, which is enclosed, changes into nitrogen atmosphere, and holding nitrogen pressure is 20Pa, then keeps other preparation conditions, can be in lower temperature
The lower Sr for realizing high quality2RuO4Film preparation, as shown in Figure 2.
The preferred embodiment of the present invention above described embodiment only expresses, the description thereof is more specific and detailed, but simultaneously
Limitations on the scope of the patent of the present invention therefore cannot be interpreted as.It should be pointed out that for those of ordinary skill in the art
For, without departing from the inventive concept of the premise, several deformations can also be made, improves and substitutes, these belong to this hair
Bright protection scope.Therefore, the scope of protection of the patent of the invention shall be subject to the appended claims.
Claims (8)
1. one kind reduces Sr in impulse laser deposition system2RuO4The method of film preparation temperature, it is characterised in that swash in pulse
Light deposition system vacuum is intracavitary to be filled with nitrogen, prepares Sr in dynamic nitrogen atmosphere2RuO4Film.
2. a kind of method that Sr2RuO4 film preparation temperature is reduced in impulse laser deposition system as described in claim 1,
It is characterized in that: impulse laser deposition system vacuum chamber is vacuumized, promote heating device to specific temperature after reaching specific vacuum degree
Degree, is then filled with nitrogen in impulse laser deposition system vacuum chamber, in dynamic nitrogen atmosphere, with pulsed laser ablation target
Material prepares Sr2RuO4Film.
3. a kind of method that Sr2RuO4 film preparation temperature is reduced in impulse laser deposition system as described in claim 1,
Be characterized in that: the specific vacuum degree is < 2 × 10-5Pa。
4. a kind of method that Sr2RuO4 film preparation temperature is reduced in impulse laser deposition system as described in claim 1,
Be characterized in that: the target is SrRuO3Target.
5. a kind of method that Sr2RuO4 film preparation temperature is reduced in impulse laser deposition system as described in claim 1,
Be characterized in that: the specific temperature is 800-900 DEG C.
6. a kind of method that Sr2RuO4 film preparation temperature is reduced in impulse laser deposition system as described in claim 1,
Be characterized in that: being filled with nitrogen gas purity in the impulse laser deposition system vacuum chamber is > 99.99%.
7. a kind of method that Sr2RuO4 film preparation temperature is reduced in impulse laser deposition system as described in claim 1,
Be characterized in that: the dynamic nitrogen atmosphere air pressure is 1.0-30.0Pa.
8. a kind of method that Sr2RuO4 film preparation temperature is reduced in impulse laser deposition system as described in claim 1,
Be characterized in that: the laser light source of the pulse laser deposition is KrF excimer laser, optical maser wavelength 248nm, laser pulse width
10ns, specific laser energy density are 1.0J/cm2-4.0J/cm2Laser frequency is 1Hz-10Hz.
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104480433A (en) * | 2014-12-31 | 2015-04-01 | 中国科学院上海硅酸盐研究所 | Method for regulating curie temperature of ferromagnetic ruthenic acid strontiam epitaxy film on silicon substrate |
| CN106784279A (en) * | 2016-12-22 | 2017-05-31 | 北京科技大学 | A kind of preparation method of high-performance doped strontium titanates oxide thermoelectricity film |
| CN109628890A (en) * | 2019-01-10 | 2019-04-16 | 河北大学 | A kind of ruthenic acid strontium/lanthanum strontium manganese oxygen transition metal oxide hetero-junctions and preparation method thereof |
| WO2019079062A1 (en) * | 2017-10-16 | 2019-04-25 | Drexel University | Mxene layers as substrates for growth of highly oriented perovskite thin films |
-
2019
- 2019-09-12 CN CN201910861462.5A patent/CN110423985B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104480433A (en) * | 2014-12-31 | 2015-04-01 | 中国科学院上海硅酸盐研究所 | Method for regulating curie temperature of ferromagnetic ruthenic acid strontiam epitaxy film on silicon substrate |
| CN106784279A (en) * | 2016-12-22 | 2017-05-31 | 北京科技大学 | A kind of preparation method of high-performance doped strontium titanates oxide thermoelectricity film |
| WO2019079062A1 (en) * | 2017-10-16 | 2019-04-25 | Drexel University | Mxene layers as substrates for growth of highly oriented perovskite thin films |
| CN109628890A (en) * | 2019-01-10 | 2019-04-16 | 河北大学 | A kind of ruthenic acid strontium/lanthanum strontium manganese oxygen transition metal oxide hetero-junctions and preparation method thereof |
Non-Patent Citations (4)
| Title |
|---|
| K.R.BALASUBRAMANIAM ET AL.: ""Phase and structural characterization of Sr2Nb2O7 and SrNbO3 thin films grown via pulsed laser ablation in O2 or N2 atmospheres"", 《JOURNAL OF SOLID STATE CHEMISTRY 》 * |
| R.CHMIELOWSKI ET AL.: ""Sr2RuO4 films grown by pulsed laser deposition"", 《JOURNAL OF CRYSTAL GROWTH》 * |
| S.MADHAVAN ET AL.: ""Growth of epitaxial Sr2RuO4 films and YBa2Cu3O7-δ/Sr2RuO4 heterostructures"", 《JOURNAL OF CRYSTAL GROWTH》 * |
| TUSYOOSHI OHNISHI ET AL.: ""Epitaxial thin-film growth of SrRuO3,Sr3Ru2O7,and Sr2RuO4 from a SrRuO3 target by pulsed laser deposition"", 《APPLIED PHYSICS EXPRESS》 * |
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Application publication date: 20191108 Assignee: CHUNG TING ALFA ELECTRONIC TECHNOLOGY (SHENZHEN) Co.,Ltd. Assignor: SHENZHEN University Contract record no.: X2023980033988 Denomination of invention: A Method of Reducing the Preparation Temperature of Sr2RuO4 Thin Films in Pulsed laser deposition System Granted publication date: 20210625 License type: Common License Record date: 20230323 |