CN110413142A - Contact panel sensor structure and preparation method thereof - Google Patents
Contact panel sensor structure and preparation method thereof Download PDFInfo
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- CN110413142A CN110413142A CN201810501808.6A CN201810501808A CN110413142A CN 110413142 A CN110413142 A CN 110413142A CN 201810501808 A CN201810501808 A CN 201810501808A CN 110413142 A CN110413142 A CN 110413142A
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- Prior art keywords
- layer
- transparency conducting
- polyimide
- contact panel
- panel sensor
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- 238000002360 preparation method Methods 0.000 title abstract description 5
- 239000004642 Polyimide Substances 0.000 claims abstract description 108
- 229920001721 polyimide Polymers 0.000 claims abstract description 106
- 230000009477 glass transition Effects 0.000 claims abstract description 12
- 229910052751 metal Inorganic materials 0.000 claims description 23
- 239000002184 metal Substances 0.000 claims description 22
- 239000000463 material Substances 0.000 claims description 20
- 238000004519 manufacturing process Methods 0.000 claims description 15
- 239000011521 glass Substances 0.000 claims description 14
- 150000001875 compounds Chemical class 0.000 claims description 8
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- 239000002904 solvent Substances 0.000 claims description 6
- 150000002894 organic compounds Chemical class 0.000 claims description 5
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- NLUNLVTVUDIHFE-UHFFFAOYSA-N cyclooctylcyclooctane Chemical compound C1CCCCCCC1C1CCCCCCC1 NLUNLVTVUDIHFE-UHFFFAOYSA-N 0.000 description 2
- JAONJTDQXUSBGG-UHFFFAOYSA-N dialuminum;dizinc;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Al+3].[Al+3].[Zn+2].[Zn+2] JAONJTDQXUSBGG-UHFFFAOYSA-N 0.000 description 2
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- ZZMOAXANMUHBCH-UHFFFAOYSA-N cyclohexane-1,4-diamine Chemical compound NC1CCC(N)CC1.NC1CCC(N)CC1 ZZMOAXANMUHBCH-UHFFFAOYSA-N 0.000 description 1
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- 238000010422 painting Methods 0.000 description 1
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 1
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- 239000010703 silicon Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
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Classifications
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
- G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
- G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
- G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
- G06F3/0412—Digitisers structurally integrated in a display
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F2203/00—Indexing scheme relating to G06F3/00 - G06F3/048
- G06F2203/041—Indexing scheme relating to G06F3/041 - G06F3/045
- G06F2203/04103—Manufacturing, i.e. details related to manufacturing processes specially suited for touch sensitive devices
Landscapes
- Engineering & Computer Science (AREA)
- General Engineering & Computer Science (AREA)
- Theoretical Computer Science (AREA)
- Human Computer Interaction (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Laminated Bodies (AREA)
- Macromolecular Compounds Obtained By Forming Nitrogen-Containing Linkages In General (AREA)
- Position Input By Displaying (AREA)
Abstract
The invention discloses a kind of contact panel sensor structures and preparation method thereof, and wherein the contact panel sensor structure includes a polyimide layer, one first transparency conducting layer and one first insulating layer.Polyimide layer with a thickness of 5 μm to 15 μm, polyimide layer is 20nm to 100nm in the optically uniaxial phase difference value of its vertical surface direction, polyimide layer is 85% to 95% to the penetrance of 550nm visible light wavelengths, and the glass transition temperature of polyimide layer is 250 °C to 280 °C.First transparency conducting layer is arranged on polyimide layer, and the first transparency conducting layer includes an at least touch control component.First insulating layer is covered on the first transparency conducting layer.Whereby, contact panel sensor structure of the invention has and good flexility and can not rebound after destroying or force to yield.
Description
Technical field
It is (flexible to refer in particular to a kind of flexibility about a kind of contact panel sensor structure and preparation method thereof by the present invention
Property) contact panel sensor structure and preparation method thereof.
Background technique
The substrate of rigid contact panel sensor on the market is at present with thinning glass or hard (hard coat) ethylene pair
Phthalic acid ester (polyethylene terephthalate, PET) is material.Wherein, using thinning glass as the touch-control of substrate
Although panel sensors are had excellent performance, but can not be as the substrate of flexible contact panel sensor, and using dura mater PET material as base
Although the contact panel sensor of material have can flexility, its number that can destroy or force to yield is limited, and destroys or force to yield or have rebound when crimping
Situation, hence limit the wide cut of the metal line of contact panel sensor, do not meet flexible contact panel sensor
Specification demands.Therefore, how to produce the specification demands for meeting flexible contact panel sensor and can be thinned, lightweight and
Non-breakable substrate is the project that industry needs to study.
Summary of the invention
The present invention provide a kind of contact panel sensor structure, including a polyimide layer, one first transparency conducting layer with
And one first insulating layer.Polyimide layer with a thickness of 5 microns (μm) to 15 μm, polyimide layer is in its vertical surface direction
Optically uniaxial phase difference value (retardation) is 20 nanometers (nm) to 100nm, and polyimide layer is to 550nm visible light wavelengths
Penetrance be 85% to 95%, and the glass transition temperature of polyimide layer be 250 °C to 280 °C.First transparency conducting layer is set
It sets on polyimide layer, and the first transparency conducting layer includes an at least touch control component.It is transparent that first insulating layer is covered in first
On conductive layer.
The present invention also provides a kind of production methods of contact panel sensor structure, comprising: a support plate is provided, on support plate
One release layer is set, then forms a polyimide layer on release layer.The method for forming polyimide layer includes: by a polyamides
Imines constituent is dissolved to form a polyimide solution in a solvent, and it is release that the polyimide solution is then applied to this
On layer, then solidify the polyimide solution on the release layer to form the polyimide layer.Later, on polyimide layer
One first transparency conducting layer is set, one first insulating layer is covered on the first transparency conducting layer, wherein the first transparency conducting layer packet
An at least touch control component is included, release layer is then removed and separates polyimide layer with release layer.Wherein, the thickness of polyimide layer
Degree is 5 μm to 15 μm, and polyimide layer is 20nm to 100nm in the optically uniaxial phase difference value of its vertical surface direction.It is poly-
Imide layer is 85% to 95% to the penetrance of 550nm visible light wavelengths, and glass transition temperature is 250 °C to 280 °C.
Detailed description of the invention
Fig. 1 is the schematic top plan view of the specific example of contact panel sensor structure of the present invention.
Fig. 2 is partial cutaway schematic of the contact panel sensor structure shown in FIG. 1 along tangent line A-A '.
Fig. 3 to Fig. 6 shows the cross-section structure of component in processing procedure, and profile position corresponds to the A-A ' tangent line in Fig. 1.
Fig. 7 is the diagrammatic cross-section of another specific example of contact panel sensor structure of the present invention.
Symbol description in attached drawing:
100 contact panel sensor structures；102 polyimide layers；104 transparent areas；106 shading regions；108 first is transparent
Conductive layer；110 first insulating layers；112 second transparency conducting layers；114X, 114Y touch control electrode are serial；The second electricity of 114X1
Pole；The second connecting line of 114X2；114Y1 first electrode；The first connecting line of 114Y2；116 metal layers；The periphery 116a cabling；
118 second insulating layers；120 support plates；122 release layers；CU curing process；D1 first direction；D2 second direction.
Specific embodiment
In order to enable the usual skill in this field to understand and implement the present invention, it will hereinafter cooperate schema, this is described in detail
The production method of the contact panel sensor structure and contact panel sensor structure of invention.It is noted that guarantor of the invention
Shield range, which is worked as, is subject to what appended claim was defined, rather than is limited with being exposed in following Examples.Therefore, In
Without prejudice under the situation of spirit and range of the invention, when can make change and modify to following embodiments.In addition, for letter
It is clean with it is clear for the sake of, same or similar component or device be is indicated with identical component symbol, and structure known to part with
Process details will not be exposed in hereinafter.It is noted that schema is for the purpose of description, not completely in accordance with full size
It draws.
It please refers to shown in Fig. 1 and Fig. 2, Fig. 1 is the schematic top plan view of the specific example of contact panel sensor of the present invention, figure
2 be contact panel sensor shown in Fig. 1 along the partial cutaway schematic of tangent line A-A '.Specific example according to the present invention, touching
Control panel sensors structure 100 is exemplified as a single substrate type contact panel sensor structure, and contact panel sensor structure
100 touch-control structure is designed as mutual capacitance type design, and but not limited to this, can also be for certainly in other change shapes of the invention
Appearance formula contact panel sensor structure.Contact panel sensor structure 100 has a transparent area 104 and is located at transparent area 104
An at least shading region 106 of side, the shading region 106 of specific example of the present invention around surrounding transparent area 104, but not as
Limit.Contact panel sensor structure 100 include polyimide layer 102, the first transparency conducting layer 108, the first insulating layer 110 and
Second transparency conducting layer 112.Wherein, polyimide layer 102 is the substrate as contact panel sensor structure 100, for holding
Carry touch control component.Polyimide layer 102 is clear, colorless, and the thickness range of polyimide layer 102 is 5 microns (μm) to 15 μ
m.Polyimide layer 102 is 20nm to 100nm in the optically uniaxial phase difference value (retardation) of its vertical surface direction.
Furthermore polyimide layer 102 is 85% to 95% to the penetrance of 550 nanometers of (nm) visible light wavelengths, and glass transition temperature is
250 °C to 280 °C.In specific example of the present invention, the tensile strength of polyimide layer 102 is 100Mpa to 180Mpa, poplar
Family name's modulus (Young ' s modulus) is 2Gpa to 6Gpa, and polyimide layer 102 is laterally extended rate (MD-
It elongation) is 10% to 50%, but not limited to this.First transparency conducting layer 108 is arranged on polyimide layer 102, and
Including an at least touch control component.In specific example of the present invention, the touch control component in the first transparency conducting layer 108 is via pattern
Change processing procedure (such as lithographic and etch process) and formed, for example including the serial 114Y of several touch control electrodes, wherein each touch control electrode
Serial 114Y further includes several first electrode 114Y1 and several first connecting line 114Y2.First connecting line 114Y2 is for even
Meet the first electrode 114Y1 in the serial 114Y of same touch control electrode.First electrode 114Y1 and the first connecting line 114Y2 are each other
It is arranged alternately and D1 extends arrangement along a first direction.On the other hand, the second transparency conducting layer 112 is arranged in the first insulating layer
On 110, including an at least touch control component.In specific example of the present invention, the second transparency conducting layer 112 can be via patterning process
(such as lithographic and etch process) and formed, for example including the serial 114X of several touch control electrodes, the wherein serial 114X of touch control electrode
It further include several second electrode 114X1 and several second connecting line 114X2.Second connecting line 114X2 is for connection to same
Second electrode 114X1 in the serial 114X of touch control electrode.Second electrode 114X1 is alternately arranged with the second connecting line 114X2
And extends along second direction D2 and arrange.The contact panel sensor structure 100 of specific example of the present invention, which utilizes, to be arranged to count
Edge effect Come between the multiple first electrode 114Y1 and multiple second electrode 114X1 of group carries out touch-control sensing.In the present invention
In specific example, the material of the first transparency conducting layer 108 and the second transparency conducting layer 112 is exemplified as tin indium oxide (indium
Tin oxide, ITO), indium zinc oxide (indium zinc oxide, IZO) and aluminum zinc oxide (aluminum zinc
Oxide, AZO), but not limited to this.Also, the thickness of the first transparency conducting layer 108 and the second transparency conducting layer 112 is distinguished
For 50nm to 150nm, the sheet resistance of the first transparency conducting layer 108 and the second transparency conducting layer 112 is respectively 100 Ω/cm2Extremely
300Ω/cm2, and the first transparency conducting layer 108 and the second transparency conducting layer 112 divide the penetrance of the visible light of 550nm wavelength
It Wei not 70% to 90%.In addition, the first insulating layer 110 is covered on first transparency conducting layer 108.In some specific examples,
First insulating layer 110 is at least partially disposed on the first transparency conducting layer 108 between the second transparency conducting layer 112, such as shape
At collets, setting is in place of the first transparency conducting layer 108 and the second transparency conducting layer 112 overlap each other so that first transparent leads
Electric layer 108 is electrically insulated from the second transparency conducting layer 112, or is arranged in the first connecting line 114Y2 and the second connecting line 114X2
So that the first connecting line 114Y2 is electrically insulated from the second connecting line 114X2 in place of overlapping each other, but not limited to this.At other
In specific example, the first insulating layer 110 can be the insulation system of a Like or whole face is covered in transparent area 104.For example, the
The first transparency conducting layer 108 is completely covered to one insulating layer, 110 property of can choose, that is to say, that the serial 114Y of touch control electrode with
The serial 114X of touch control electrode can be completely set up on different horizontal plane, but not limited to this.
In addition, the thickness range of the first insulating layer 110 is exemplified as 20nm to 50nm, the material of the first insulating layer 110 can be with
For organic compound material, for example including the compound containing pentacene (pentacene), contain phthalocyanine
(phthalocyanine) compound, the compound containing 3- hexyl thiophene (3-hexylthiophene) contain 9,9- bis-
The chemical combination of octyl fluorenes and diazosulfide copolymer (poly (9,9-dioctylfluorene-co-benzothiadiazole))
Object, but not limited to this.Wherein, the compound containing pentacene (pentacene) is, for example, that there are five phenyl ring and straight lines for a kind of tool
Shape condenses the polycyclic aromatic hydrocarbons (PAH) of (condensed) composition, but not limited to this.In some specific examples, the first insulating layer 110
Material may be inorganic material, material such as silica (SiO2), silicon nitride (SiNx) or silicon oxynitride (SiOxNy).
The contact panel sensor structure 100 of specific example of the present invention can also also comprise metal layer 116 and be arranged in polyamides
On imine layer 102.Wherein, metal layer 116 forms an at least periphery cabling 116a via patterning process and is located at shading region
106, and it is electrically connected to each corresponding touch control electrode serial 114X or 114Y or first electrode 114Y1 or second electrode
114X1.The thickness range of metal layer 116 is exemplified as 5nm to 50nm, and material citing, which includes that copper, aluminium, gold or silver etc. are good, to be led
Electric metal, but not limited to this.The other end of periphery cabling 116a can be electrically connected with external drive circuit (not shown).The present invention
The contact panel sensor structure 100 of specific example further includes second insulating layer 118, is covered on that metal layer 116, second is transparent to lead
In electric layer 112 and the first insulating layer 110, but not limited to this.The thickness range of second insulating layer 118 is exemplified as 20nm extremely
50nm, and the material of second insulating layer 118 can be identical or not identical with the material of above-mentioned first insulating layer 110.
It please refers to shown in Fig. 3 to Fig. 6.Fig. 3 to Fig. 6 is the specific of the production method of contact panel sensor structure of the present invention
The processing procedure schematic diagram of example, and Fig. 3 to Fig. 6 shows the cross-section structure of component in processing procedure, profile position corresponds to the A- of Fig. 1
A ' tangent line.As shown in figure 3, providing a support plate 120 first, it is exemplified as a glass substrate or plastic base, but not limited to this.It connects
, a release layer 122 is set on support plate 120.In this specific example, release layer 122 includes thermoplastics type (thermal
Plastic) polyimides as has the polyimides glue of adherence, and but not limited to this.It is release in other specific examples
Layer 122 can also be any sticker or adhesion coating with temporary adherence.Wherein, polyimides is made of polyimides
Object reaction is formed, which includes one or more diamine monomers and one or more dianhydride monomers.Wherein,
Diamine monomer citing in polyimides constituent may include 1,2- cyclohexanediamine (1,2-Cyclohexanediamine), 1,4-
Bis- (aminomethyl) hexamethylene (1,3-Bis (aminomethyl) of cyclohexanediamine (1,4-Cyclohexanediamine), 1,3-
Cyclohexane), Isosorbide-5-Nitrae-diaminobenzene (Isosorbide-5-Nitrae-Phenylenediamine, abbreviation PDA), 3,3'- dimethylbenzidine (3,
3'-Dimethylbenzidine) and bis- (3- amino-benzene oxygen) benzene of 1,3- (1,3-Bis (3-aminophenoxy) benzene)
One of or it is a variety of, but not limited to this.Dianhydride monomer in polyimides constituent for example may include cyclobutanetetracarboxylic
Dianhydride (Cyclobutane-1,2,3,4-tetracarboxylic dianhydride, abbreviation CBDA)
、
Bicyclooctane tetracarboxylic dianhydride (Bicyclooctanetetracarboxylic dianhydride, abbreviation BODA)
、
Tetrahydro -5,9- first bridge -1H- pyrans simultaneously -1,3,6,8 (4H)-tetrone (Tetrahydro-5,9- of [3,4-D] oxa- Zhuo
Methano-1H-pyrano [3,4-d]-oxepin-1, -3,6,8 (4H)-tetrone, abbreviation TAC)
、
1,2,3,4- butane tetracarboxylic acid dianhydride (1,2,3,4-Butanetetracarbox-ylic dianhydride, referred to as
BDA)
、
Pyromellitic acid anhydride (Pyromellitic dianhydride, abbreviation PMDA)
、
(N,N'-(5,5'-(Perfluoropropane-2,2-diyl)bis(2-hydroxy-5,1-phenylene))bis
(1,3-dioxo-1,3-dihydroisobenzofuran-5-carboxamide), abbreviation 6-FAP-ATA)
、
N, N'- (4,4'- (piperazine -1,4- diyl) two (4,1- phenylene)) two (1,3- dioxy -1,3- dihydroisobenzofurans -
5- formamide
(N,N'-(4,4'-(Piperazine-1,4-diyl)bis(4,1-phenylene))bis(1,3-di-oxo-1,3-
Dihydroisobenzofuran-5-carboxamide), abbreviation DA-PDAA)
、
N, N'- (4,4'- (bis- croak pyridine -1,1'- two of 4,4'-) two (4,1- phenylenes)) two (different benzos of 1,3- dioxy -1,3- dihydro
Furans -5- formamide
(N,N'-(4,4'-(4,4'-Bipiperidine-1,1'-diyl)bis(4,1-phenylene))bis-(1,3-
Dioxo-1,3-dihydroisobenzofuran-5-carboxamide), abbreviation DA-BPPDA)
、
N, N'- (4,4'- (9H- fluorenyl -9,9- two) two (4,1- phenylene)) two (1,3- dioxy -1,3- dihydroisobenzofurans -
5- formamide)
(N,N'-(4,4'-(9H-Fluorene-9,9-diyl)bis(4,1-phenylene))bis(1,3-dioxo-1,3-
Dihydroisobenzofuran-5-carboxamide), abbreviation FDA-ATA)
、
5- isobenzofuran carboxylic acid, 1,3- dihydro -1,3- dioxy, 1,4- phenylene ester (5-
Isobenzofurancarboxylic acid, 1,3-dihydro-1,3-dioxo-, Isosorbide-5-Nitrae-phenylene ester, referred to as
TAHQ)
、
Hexamethylene -1,4- diyl two (methylene) two [1,3- dihydro -1,3- dioxo isobenzofuran -5- carboxylate]
(Cyclohexane-1,4-diylbis(methylene)bis(1,3-dioxo-1,3-dihy-droisobenzofuran-5-
Carboxylate), abbreviation TA-CHDM)
、
(1,3- dioxane -5,5- diyl) two (methylene) two [1,3- dihydro -1,3- dioxo isobenzofuran -5- carboxylic acid
Ester] ((1,3-Dioxane-5,5-diyl) bis (methylene) bis (1,3-dioxo-1,3-
Dihydroisobenzofuran-5-carboxylate), abbreviation TA-CMF)
、
1,4- bis- (3,4- di carboxyl phenyloxy) phthalate anhydride (1,4-Bis (3,4-dicarboxyphen-oxy) benzene
Dianhydride, abbreviation HQDA)
And
4,4'- bis- (phthalic anhydride) thioethers (4,4'-Bis (phthalic anhydride) sulfide, abbreviation TPDA)
One of or it is a variety of.In addition, release layer 122 with a thickness of
0.5 μm to 1.0 μm, release layer 122 is 300g/cm to 1000g/cm, release layer to the 180 degree peel strength of smooth alkali-free glass
122 tensile strength is 50Mpa to 100Mpa, and the young's modulus of release layer 122 is 1Gpa to 2Gpa, the transverse direction of release layer 122
Elongation percentage is 50% to 100%, and release layer 122 is 20% to 30% to the penetrance of the visible light of 308nm.
Then, a polyimide layer 102 is formed on release layer 122.It is worth noting that, forming polyimide layer 102
The step of include first a soluble polyimides constituent being dissolved in a solvent to form a polyimide solution, then will
The polyimide solution is applied on release layer 122, is then solidified to the polyimide solution being coated on release layer 122
Processing procedure CU, so that it is formed by curing polyimide layer 102, curing process CU is exemplified as irradiation or baking etc., and but not limited to this.
Polyimide solution of the present invention also optionally includes bridging agent, initiator or solvent, but not limited to this.Wherein, described molten
Agent is, for example, any solvent well known to person with usual knowledge in their respective areas, including but not limited to: cyclohexanone N- methyl pyrrole
Pyrrolidone (NMP), dimethyl acetamide (DMAC), propylene glycol methyl ether acetate (PGMEA), gamma-butyrolacton (GBL) or its mixing
Object.Polyimides constituent includes one or more diamine monomers and one or more dianhydride monomers, those diamine monomers and two
The selection of anhydride monomer can be with the selected diamine monomer of thermoplastic polyimides and dianhydride monomer phase in above-mentioned release layer 122
With or it is not identical.Wherein, the diamine monomer citing in polyimides constituent may include 1,2- cyclohexanediamine (1,2-
Cyclohexanediamine), bis- (aminomethyl) hexamethylenes of 1,4- cyclohexanediamine (1,4-Cyclohexanediamine), 1,3-
(1,3-Bis (aminomethyl) cyclohexane), Isosorbide-5-Nitrae-diaminobenzene (Isosorbide-5-Nitrae-Phenylenediamine, abbreviation PDA),
3,3'- dimethylbenzidine (3,3'-Dimethylbenzidine) and bis- (3- amino-benzene oxygen) benzene (1,3-Bis (3- of 1,3-
Aminophenoxy) benzene) one of or it is a variety of, but not limited to this.Dianhydride monomer example in polyimides constituent
It such as may include cyclobutanetetracarboxylic dianhydride (Cyclobutane-1,2,3,4-tetracarboxylic dianhydride, abbreviation
CBDA)
、
Bicyclooctane tetracarboxylic dianhydride (Bicyclooctanetetracarboxylic dianhydride, abbreviation BODA)
、
Tetrahydro -5,9- first bridge -1H- pyrans simultaneously -1,3,6,8 (4H)-tetrone (Tetrahydro-5,9- of [3,4-D] oxa- Zhuo
Methano-1H-pyrano [3,4-d]-oxepin-1, -3,6,8 (4H)-tetrone, abbreviation TAC)
、
1,2,3,4- butane tetracarboxylic acid dianhydride (1,2,3,4-Butanetetracarbox-ylic dianhydride, referred to as
BDA)
、
Pyromellitic acid anhydride (Pyromellitic dianhydride, abbreviation PMDA)
、
(N,N'-(5,5'-(Perfluoropropane-2,2-diyl)bis(2-hydroxy-5,1-phenylene))bis
(1,3-dioxo-1,3-dihydroisobenzofuran-5-carboxamide), abbreviation 6-FAP-ATA)
、
N, N'- (4,4'- (piperazine -1,4- diyl) two (4,1- phenylene)) two (1,3- dioxy -1,3- dihydroisobenzofurans -
5- formamide (N, N'- (4,4'- (Piperazine-1,4-diyl) bis (4,1-phenylene)) bis (1,3-di-oxo-1,
3-dihydroisobenzofuran-5-carboxamide), abbreviation DA-PDAA)
、
N, N'- (4,4'- (bis- croak pyridine -1,1'- two of 4,4'-) two (4,1- phenylenes)) two (different benzos of 1,3- dioxy -1,3- dihydro
Furans -5- formamide (N, N'- (4,4'- (4,4'-Bipiperidine-1,1'-diyl) bis (4,1-phenylene)) bis-
(1,3-dioxo-1,3-dihydroisobenzofuran-5-carboxamide), abbreviation DA-BPPDA)
、
N, N'- (4,4'- (9H- fluorenyl -9,9- two) two (4,1- phenylene)) two (1,3- dioxy -1,3- dihydroisobenzofurans -
5- formamide) (N, N'- (4,4'- (9H-Fluorene-9,9-diyl) bis (4,1-phenylene)) bis (1,3-dioxo-
1,3-dihydroisobenzofuran-5-carboxamide), abbreviation FDA-ATA)
、
5- isobenzofuran carboxylic acid, 1,3- dihydro -1,3- dioxy, 1,4- phenylene ester (5-
Isobenzofurancarboxylic acid, 1,3-dihydro-1,3-dioxo-, Isosorbide-5-Nitrae-phenylene ester, letter
Claim TAHQ)
、
Hexamethylene -1,4- diyl two (methylene) two [1,3- dihydro -1,3- dioxo isobenzofuran -5- carboxylate]
(Cyclohexane-1,4-diylbis(methylene)bis(1,3-dioxo-1,3-dihy-droisobenzofuran-5-
Carboxylate), abbreviation TA-CHDM)
、
(1,3- dioxane -5,5- diyl) two (methylene) two [1,3- dihydro -1,3- dioxo isobenzofuran -5- carboxylic acid
Ester] ((1,3-Dioxane-5,5-diyl) bis (methylene) bis (1,3-dioxo-1,3-
Dihydroisobenzofuran-5-carboxylate), abbreviation TA-CMF)
、
1,4- bis- (3,4- di carboxyl phenyloxy) phthalate anhydride (1,4-Bis (3,4-dicarboxyphen-oxy) benzene
Dianhydride, abbreviation HQDA)
And
4,4'- bis- (phthalic anhydride) thioethers (4,4'-Bis (phthalic anhydride) sulfide, abbreviation TPDA)
One of or it is a variety of.In some other specific examples, on
It is identical with the selected diamine monomer of polyimide layer 102 and dianhydride monomer to state release layer 122.In addition, the polyimide solution
Coating method include but is not limited to scraper type coating, bar formula coating or screen painting.It is noted that the present invention is mentioned
The polyimide layer 102 of confession, can optionally demand due to being applied on release layer 122 using the polyimide solution of liquid
Flatness, uniformity and the compactness on 102 surface of thickness and polyimide layer of polyimide layer 102 required for adjusting,
And can avoid generating bubble when coating, therefore polyimide layer 102 can be applied to the substrate of various different touch control components, more
After can effectively improve each transparency conducting layer in follow-up process, metal sputtering layer, organic insulator or inorganic insulation layer etc.
The flatness and yield of continuous production film layer.In comparison, traditionally common mode is by the substrate diaphragm of full wafer (such as polyamides
Imines diaphragm) support plate is directly attached in the form of membranaceous, and release layer can't be first coated with before attaching substrate diaphragm.Cause
This, substrate diaphragm after overbaking, will adhere well to support plate and be difficult to separate with support plate, but also be easy to produce bubble or
Other attach bad problem.In addition, larger size can also be made using polyimide layer 102 made by polyimide solution
Contact panel sensor structure, such as size be greater than or equal to 1200 millimeters of (mm) x1300mm contact panel sensor knot
Structure.In this specific example, polyimide layer 102 with a thickness of 5 microns (μm) to 15 μm, polyimide layer 102 it is vertical its
The optically uniaxial phase difference value (retardation) of surface direction is 20nm to 100nm, and polyimide layer 102 is to 550 nanometers
(nm) penetrance of visible light wavelengths is 85% to 95%, and glass transition temperature (Tg) is 250 °C to 280 °C.
It please refers to shown in Fig. 4.Polyimide layer 102 is being formed after the step on release layer 122, in the polyimide layer
One first transparency conducting layer 108 is set on 102, and the first transparency conducting layer 108 includes an at least touch control component.The present invention is specific
In example, the first transparency conducting layer 108 is to be fabricated to the serial 114Y of several touch control electrodes via patterning process, each touch-control electricity
Extremely serial 114Y includes several first electrode 114Y1 (as shown in Figure 1) and several first connecting line 114Y2.Wherein, the first connection
Line 114Y2 is for connection to the first electrode 114Y1 of the serial 114Y of same touch control electrode.
It please refers to shown in Fig. 5, after the first transparency conducting layer 108 is arranged on polyimide layer 102, in the first electrically conducting transparent
The first insulating layer 110 is formed on layer 108.As shown in Fig. 1 and Fig. 4, the first insulating layer 110 of specific example of the present invention is exemplified as figure
Pattern film covers the first connecting line 114Y2 in the first transparency conducting layer 108 including multiple collets.It is specific real at other
In example, the serial 114Y of touch control electrode as produced by the first transparency conducting layer 108 can also be completely covered in the first insulating layer 110,
But not limited to this.Then, the second transparency conducting layer 112 is formed on the first insulating layer 110 comprising an at least touch control component,
As previously mentioned, the second transparency conducting layer 112 of specific example of the present invention includes the serial 114X of multiple touch control electrodes, and each touch-control is electric
Extremely serial 114X includes second electrode 114X1 and the second connecting line 114X2, wherein the second connecting line 114X2 is for connection to
The second electrode 114X1 of the serial 114X of same touch control electrode.In some specific examples, the second transparency conducting layer of part
112 be to be arranged on the first insulating layer 110, and second transparency conducting layer 112 of another part is arranged in multiple first electrodes
Between 114Y1.In specific example of the present invention, the second transparency conducting layer 112 is to be fabricated to several touch-controls via patterning process
The serial 114X of electrode.
Then, patterned metal layer 116 is formed on the polyimide layer 102 of shading region 106 comprising one or more
Periphery cabling 116a.The thickness range of metal layer 116 is 5nm to 50nm, and the material of metal layer 116 includes copper, aluminium, gold or silver
Etc. good conductive metal, but not limited to this.Wherein, cabling 116a in periphery is that directly to contact corresponding touch control electrode serial
114X and 114Y, or it is electrically connected to each corresponding second electrode 114X1 and first electrode 114Y1.In addition, periphery cabling
The other end of 116a can be then electrically connected with external drive circuit (not shown).
It please refers to shown in Fig. 6, then in the first transparency conducting layer 108, the first insulating layer 110, the second transparency conducting layer 112
And second insulating layer 118 is formed on metal layer 116, so that second insulating layer 118 is covered the serial 114X, 114Y of touch control electrode, the
One insulating layer 110 and periphery cabling 116a.Then, a removing processing procedure is carried out, such as release using the light irradiation of specific wavelength
Layer 122, so that release layer 122 is removed from polyimide layer 102, or is removed from support plate 120.In a specific example,
The step of removing release layer 122 includes that the light of 308nm wavelength is irradiated release layer 122, so that release layer 122 is generated solution viscous
(debond) effect, but not limited to this.That is, after via above-mentioned light irradiation, 120 meeting of support plate and polyimide layer
102 are separated from each other, and form contact panel sensor structure 100 of the invention.
The characteristic of polyimide layer used in above-mentioned specific example arranges such as following table 1.The explanation of main method for measurement
As follows: the method for measurement of polyimides thickness of dry film is to measure method according to JIS K5600.The method for measurement of uniaxial phase difference value is
According to JIS B 7071-1:2015 mensuration.The method for measurement of light transmittance is according to JIS K7361 mensuration.Gamma transition
The method for measurement of temperature (Tg) is according to JIS K7121;2012 mensurations.Tensile strength (Tensile Strength), Young
Modulus and the method for measurement for being laterally extended rate are according to JIS J7127 mensuration.
Table 1
| Polyimides property | |
| Viscosity (cps) | 2000-10000 |
| Solid content (%) | 5-35 |
| Polyimides thickness of dry film (dry thickness) (μm) | 5-15 |
| Optically uniaxial phase difference value (Retardation) (nm) at 10 μm of film thickness | 20-100 |
| CIE color space b* value at 10 μm of film thickness | <1.5 |
| It is set in glass support plate, to the penetrance (%) of 550 nano wave length visible lights at 10 μm of film thickness | 85-95 |
| Cracking temperature (°C) | >400 |
| Glass transition temperature (°C) | 250-280 |
| Thermal expansion coefficient (at 100 °C ~ 200 °C) | <40 |
| Tensile strength (Mpa) | 100-180 |
| Young's modulus (Gpa) | 2-6 |
| It is laterally extended rate (%) | 10-50 |
| Solvent type | NMP, DMAC, GBL or PGMEA |
In other specific examples, polyimide layer 102 of the invention is in addition to as production projected capacitive (Projected
Capacitive) contact panel sensor structure and surface capacitance type (Surface Capacitive) contact panel sensor
Except the flexible base board of structure, it also can be applied to various contact panel sensors known to the usual skill in other this fields
In structure, such as resistance-type (Resistive) contact panel sensor structure, infrared-type (Infrared) touch panel sensing
Device structure, optical image formula contact panel sensor structure, surface acoustic wave type touch control panel sensor structure and electromagnetic touch-control
Panel sensors structure etc., but not limited to this.As shown in fig. 7, Fig. 7 is another tool of contact panel sensor structure of the present invention
The diagrammatic cross-section of body example, wherein Fig. 7 show electric resistance touch-control panel sensor structure.Form specific reality shown in Fig. 7
The method of the contact panel sensor structure 100 of example can refer to aforementioned Fig. 3 of the present invention to production method shown in fig. 6, no longer go to live in the household of one's in-laws on getting married
It states.Specific example of the present invention is unlike Fig. 3 to production method shown in fig. 6, wherein the first transparency conducting layer 108 and second
Transparency conducting layer 112 can be respectively the touch control component of a flood.In addition, the first insulating layer 110 is for example comprising multiple particle branch
Point (Spacer), and there are gap between multiple particle fulcrums, but not limited to this.
Using polyimide layer 102 provided by the present invention as contact panel sensor knot produced by flexible base board
Structure can also arrange in pairs or groups flat screens (panel display), such as arrange in pairs or groups Thin Film Transistor-LCD (TFT-LCDs), have
Machine light emitting diode (OLEDs) display and quantum dot (QD) display etc. and be fabricated to touch control display flexible, but not
It is limited to this.
Hereinafter, providing the embodiment of the present invention and comparative example, to be compared with the embodiment of the present invention, and illustrate of the invention
The technical characteristic of contact panel sensor structure.
Embodiment:
Firstly, glass substrate needed for providing a production contact panel sensor structure.Release layer is formed on the glass substrate, and
And polyimide, the first transparency conducting layer, the first insulating layer, the second transparency conducting layer, metal are sequentially formed on from formation
Layer and second insulating layer, the production method of these film layers can refer to earlier embodiments.Wherein, release layer with a thickness of 0.8 μ
m.Release layer is 500g/cm to the peel strength of the 180 degree of smooth glass.The tensile strength of release layer is 50Mpa.Release layer
Young's modulus is 2Gpa.The rate that is laterally extended of release layer is 50%.Release layer is 25% for 308nm visible wavelength penetrance.
Polyimide is clear, colorless, with a thickness of 10 μm.First transparency conducting layer and the second transparency conducting layer thickness are respectively
100nm, sheet resistance are respectively 120 Ω/cm2It and is respectively 85% to 550nm visible light wavelengths penetrance.First electrically conducting transparent
Layer and the second transparency conducting layer thickness material are indium tin oxide (ITO), the first organic compound layer and the second organic compound
The material of layer is the organic compound of F8BT, with a thickness of 50nm.Metal layer with a thickness of 10nm.Then, by a 308nm wavelength
Light irradiates release layer, keeps release layer solution viscous, and then form contact panel sensor structure of the invention.
Comparative example:
Firstly, polyethylene terephthalate thin film (PET) substrate needed for providing a production contact panel sensor structure.It connects
, one first conductive layer is made using print process on the pet substrate.Wherein, the first conductive layer includes metal grill pattern, example
Multiple strip shaped electric poles are such as formed, material is copper or silver, and with a thickness of 0.001 μm, sheet resistance is 200 Ω/cm2And it is right
550nm visible light wavelengths penetrance is 88%.Then, the first insulating layer and the second conduction are sequentially made on the first conductive layer
Layer.The material of first insulating layer is epoxy resin, and covers the first conductive layer, and by the first conductive layer and the second conductive layer that
This is electrically insulated.First insulating layer with a thickness of 1 μm, and to 550nm visible light wavelengths penetrance be 85%.Second conductive layer
Including metal grill pattern, such as multiple strip shaped electric poles are formed, and material is copper or silver, with a thickness of 0.001 μm, sheet resistance
It is 200 Ω/cm2It and is 88% to 550nm visible light wavelengths penetrance.Then, production periphery cabling with by the first conductive layer with
And second conductive layer be electrically connected to external drive circuit, the control panel construction of comparative example is completed with this.
Prepare main material used in the contact panel sensor structure of above-described embodiment and comparative example information and
Method for measurement is as follows.
Embodiment:
Glass substrate: Japan AGC glass, AN100 alkali-free glass.
Release layer: platform rainbow science and technology, LAC-231.
Polyimide: platform rainbow science and technology, CXQ-103H.
First transparency conducting layer: Japanese TOSOH Co., Ltd, ITO-HR.
Second transparency conducting layer: Japanese TOSOH Co., Ltd, ITO-HR.
First insulating layer: chemical industry society, OFPR-800 are answered in Tokyo.
Second insulating layer: chemical industry society, OFPR-800 are answered in Tokyo.
Metal layer: Japanese JX metal Co., Ltd., SR copper.
Comparative example:
Polyethylene terephthalate substrate: Japanese Japan's weaving, A4100.
First silver metal grid conducting layer: Taiwan causes good science and technology, TP-7025.
First insulating layer: Taiwan Changxing chemical industry, 8300-M11.
Second insulating layer: Taiwan Changxing chemical industry, 8300-M11.
About the present embodiment and comparative example, that respectively tests is described as follows: the method for measurement of polyimides thickness of dry film be according to
Method is measured according to JIS K5600.The method for measurement of light transmittance is according to JIS K7361 mensuration.The measurement of uniaxial phase difference value
Method is according to JIS B 7071-1:2015 mensuration.The method for measurement of glass transition temperature (Tg) is according to JIS K7121;
2012 mensurations.The method for measurement of peel strength is according to JIS K6854-3:1999 mensuration.Tensile strength, young's modulus
And being laterally extended the method for measurement of rate is according to JIS J7127 mensuration.The method for measurement of sheet resistance is according to JIS K6911
Mensuration.For the measurement of the pet substrate in the polyimide and comparative example in the present embodiment, such as following table 2 is arranged.
Table 2
| Property comparison | Embodiment | Comparative example |
| For 550nm visible wavelength penetrance | 90% | 88% |
| Glass transition temperature (Tg) | 280°C | 78°C |
| Tensile strength | 150MPa | 200Mpa |
| Young's modulus | 3.5Gpa | >6Gpa |
| It is laterally extended rate | 20% | 40% |
| Process conditions | It is difficult | In |
| Price | In | It is low |
| Penetrance | It is high | In |
| Curved surface characteristic | It is excellent | Commonly |
| Can destroy or force to yield characteristic | It is excellent | Difference |
| It destroys or force to yield number | It is high | It is low |
As shown in table 2, the optical characteristics of the present embodiment polyimide layer, such as 550nm visible wavelength at 10 μm of film thickness
Penetrance is 90% and the optically uniaxial phase difference value of its vertical surface direction is 50nm, can satisfy the usual skill in this field
The specification demands of known flexible contact panel sensor structure.Also, the glass of the present embodiment polyimide layer converts temperature
Degree is 280 °C, therefore can bear annealing (annealing) temperature of follow-up process.In comparison, the pet substrate of comparative example
Glass transition temperature only have 78 °C, be not easy to bear subsequent annealing temperature.In addition, the main machine of the present embodiment polyimide layer
Tool property can also meet the specification demands of flexible contact panel sensor structure, such as tensile strength is 150Mpa, Young mould
Number is 3.5Gpa, and the rate that is laterally extended is 20%.About curved surface characteristic, the characteristic that can destroy or force to yield and number of destroying or force to yield, used test method
It is that the pet substrate of the present embodiment polyimides laminar substrate and comparative example is carried out to repeating doubling respectively to observe destroying or force to yield for substrate
Characteristic, wherein being watched when each doubling with the broken line direction of doubling, minimum radius of circle (the most Chinese yeast of the inner surface tangent line of fold position
Rate radius) it is 3mm.After carrying out 2000 doublings, structure is still kept completely the present embodiment polyimide layer, therefore can be destroyed or force to yield
Property it is good, can destroy or force to yield number height, have and good curved surface characteristic and do not rebound after bending, can meet flexible touch panel and pass
The specification demands of sensor structure.In comparison, the pet substrate of comparative example starts fatigue occur after carrying out doubling 100 times
(fatigue) phenomenon, and the case where destroy or force to yield or have rebound when crimping.Therefore, the characteristic of destroying or force to yield of the pet substrate of comparative example
Bad with fatigue resistance, the number that can destroy or force to yield is low, and curved surface characteristic is bad, and the case where destroy or force to yield or have rebound when crimping.It can not
Reach the specification demands of flexible contact panel sensor structure.
In conclusion the polyimides of contact panel sensor structure of the present invention has good light transmittance, and compare
Thinning glass baseplate or PET base material known to the usual skill in this field, have it is good can flexility, can destroy or force to yield number
And it does not rebound after destroying or force to yield.In addition, polyimide layer glass transition temperature with higher provided by the present invention, Neng Goucheng
By subsequent high temperature process, reliability is preferable.The present invention also provides a kind of production sides of above-mentioned contact panel sensor structure
Method can be directly applied on support plate using polyimide solution or in releasing layer and carry out curing process to form polyimides
Layer, therefore optionally demand can adjust thickness and preferable flatness and uniformity.
The foregoing is merely presently preferred embodiments of the present invention, all equivalent changes done according to scope of the present invention patent with
Modification, is all covered by the present invention.
Claims (13)
1. a kind of contact panel sensor structure characterized by comprising
One polyimide layer, wherein the polyimide layer with a thickness of 5 μm to 15 μm, the polyimide layer is in its vertical surface side
To optically uniaxial phase difference value be 20nm to 100nm, which is 85% to the penetrances of 550nm visible light wavelengths
To 95%, and glass transition temperature is 250 °C to 280 °C；
One first transparency conducting layer is arranged on the polyimide layer, and first transparency conducting layer includes an at least touch-control group
Part；And
One first insulating layer, covering are set on first transparency conducting layer.
2. contact panel sensor structure as described in claim 1, which is characterized in that wherein the tension of the polyimide layer is strong
Degree is 100Mpa to 180Mpa, and the young's modulus of the polyimide layer is 2Gpa to 6Gpa, and the transverse direction of the polyimide layer is prolonged
Stretching rate is 10% to 50%.
3. contact panel sensor structure as described in claim 1, which is characterized in that further include:
One second transparency conducting layer is arranged on first insulating layer；
One metal layer is arranged on the polyimide layer；And
One second insulating layer is covered on the metal layer, second transparency conducting layer and first insulating layer.
4. contact panel sensor structure as claimed in claim 3, which is characterized in that wherein second transparency conducting layer includes
At least one touch control component.
5. contact panel sensor structure as claimed in claim 3, which is characterized in that wherein second transparency conducting layer includes
At least one connecting line.
6. contact panel sensor structure as claimed in claim 3, which is characterized in that wherein first transparency conducting layer and should
The thickness of second transparency conducting layer is respectively 50nm to 150nm, the table of first transparency conducting layer and second transparency conducting layer
Surface resistance is respectively 100 Ω/cm2To 300 Ω/cm2, and first transparency conducting layer and second transparency conducting layer are to 550nm wave
The penetrance of long visible light is respectively 70% to 90%.
7. contact panel sensor structure as claimed in claim 3, which is characterized in that wherein first insulating layer and this second
Insulating layer includes organic compound material.
8. contact panel sensor structure as claimed in claim 3, which is characterized in that wherein first insulating layer and this second
Insulating layer includes the compound containing pentacene, the compound containing phthalocyanine, the compound containing 3- hexyl thiophene or contains 9,
The compound of 9- dioctyl fluorene and diazosulfide copolymer.
9. contact panel sensor structure as claimed in claim 3, which is characterized in that wherein first insulating layer and this second
The thickness range of insulating layer is respectively 20nm to 50nm.
10. a kind of production method of contact panel sensor structure, including:
One support plate is provided；
One release layer is set on the support plate；
A polyimide layer is formed on the release layer, which is characterized in that the step of a polyimide layer is formed on the release layer
Suddenly include:
One polyimides constituent is dissolved in a solvent to form a polyimide solution；
The polyimide solution is applied on the release layer；And
Solidify the polyimide solution on the release layer to form the polyimide layer, wherein the thickness of the polyimide layer
It is 5 μm to 15 μm, which is 20nm to 100nm in the optically uniaxial phase difference value of its vertical surface direction, this is poly-
Imide layer is 85% to 95% to the penetrance of 550nm visible light wavelengths, and glass transition temperature is 250 °C to 280 °C；
One first transparency conducting layer is set on the polyimide layer, and first transparency conducting layer includes an at least touch-control group
Part；
One first insulating layer is covered on first transparency conducting layer；And
The release layer is removed, separates the polyimide layer with the release layer.
11. the production method of contact panel sensor structure as claimed in claim 10, which is characterized in that further include:
One second transparency conducting layer is set on first insulating layer；
One metal layer is set on the polyimide layer；And
A second insulating layer is covered on the metal layer, second transparency conducting layer and first insulating layer.
12. the production method of contact panel sensor structure as claimed in claim 10, which is characterized in that wherein removing should be from
The step of type layer includes irradiating the light of a 308nm wavelength after the release layer to glue the release layer solution.
13. the production method of contact panel sensor structure as claimed in claim 10, which is characterized in that the wherein release layer
With a thickness of 0.5 μm to 1.0 μm, it is 300g/cm to 1000g/cm which, which dials from intensity the 180 degree of smooth glass, should
The tensile strength of release layer is 50Mpa to 100Mpa, and the young's modulus of the release layer is 1Gpa to 2Gpa, the cross of the release layer
It is 50% to 100% to elongation percentage, and the release layer is 20% to 30% to the penetrance of the visible light of 308nm.
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| CN111338503A (en) * | 2020-02-12 | 2020-06-26 | 业成科技（成都）有限公司 | Single-layer design touch display panel and manufacturing method thereof |
| CN114779964A (en) * | 2022-05-20 | 2022-07-22 | 安徽繁盛显示科技有限公司 | Touch panel manufacturing method based on ultrathin glass and touch panel thereof |
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| Publication number | Publication date |
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| TWI673553B (en) | 2019-10-01 |
| TW201945815A (en) | 2019-12-01 |
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