CN110400851A - 一种高稳定性的钙钛矿太阳能电池 - Google Patents
一种高稳定性的钙钛矿太阳能电池 Download PDFInfo
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- 230000008859 change Effects 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 208000032953 Device battery issue Diseases 0.000 description 1
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 1
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- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 230000002441 reversible effect Effects 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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Abstract
本发明公开了一种高稳定性的钙钛矿太阳能电池，包括基底，电子传输层，钙钛矿层，氧化锆层，空穴传输层和电极；所述基底上设置有电子传输层；所述电子传输层上设置有钙钛矿层；所述钙钛矿层上设置有空穴传输层；所述空穴传输层上设置有电极；所述氧化锆层设置在钙钛矿层和空穴传输层之间或空穴传输层和电极之间或电极顶部。本案氧化锆层保护钙钛矿层不受水汽入侵，进而提高稳定性；便于生产，实用性强。
Description
技术领域
本发明涉及钙钛矿太阳能电池领域，尤其是涉及一种高稳定性的钙钛矿太阳能电池结构。
背景技术
钙钛矿太阳能电池是由于其价格便宜，制造工艺简单以及带宽可调利于做叠层太阳能电池上电池等优点，近年来受到了很大的关注。
但是钙钛矿电池的稳定性依然是一个很大的问题。传统钙钛矿太阳能电池的活性层主要使用有机阳离子作为AB钙钛矿结构中的A位置，如甲胺（MA）离子和甲脒（FA）离子，但是这种材料在水汽的作用下会降解，从而使钙钛矿电池失效。并且，其热稳定性一般，在120摄氏度左右会发生降解。
而使用全无机的CsPb材料作为钙钛矿活性层能够提高其稳定性。此材料的退火温度达到300摄氏度左右，热稳定性优异，其次在水汽作用下只会造成可逆的相变，退火后电池性能能够恢复。然而为了使其钙钛矿结构稳定在黑相，提高器件结构的水汽阻隔率依旧非常重要，因此需要采取介入阻水薄膜及后封装等方法提高其稳定性。
发明内容
本发明目的是：提供了一种采用无机钙钛矿材料且在设置氧化锆层，以保护钙钛矿层不受水汽入侵，稳定性好的钙钛矿太阳能电池。
本发明的技术方案是：一种高稳定性的钙钛矿太阳能电池，包括基底，电子传输层，钙钛矿层，氧化锆层，空穴传输层和电极；所述基底上设置有电子传输层；所述电子传输层上设置有钙钛矿层；所述钙钛矿层上设置有空穴传输层；所述空穴传输层上设置有电极；所述氧化锆层设置在钙钛矿层和空穴传输层之间或空穴传输层和电极之间或电极顶部。
优选的，所述氧化锆层设置在钙钛矿层和空穴传输层之间或空穴传输层和电极之间；所述氧化锆层厚度为1-3nm。
优选的，所述氧化锆层设置在电极顶部；所述氧化锆层厚度为100-500nm。
优选的，所述基底为透明导电玻璃基底。
优选的，所述钙钛矿层为利用无机钙钛矿材料作为活性层；无机钙钛矿材料分子式为CsPb。
优选的，所述电极为金属电极或有机材料电极。
优选的，所述氧化锆层原子层沉积法或等离子体增强化学的气相沉积法制备。
本发明的优点是：
1、氧化锆层保护钙钛矿层不受水汽入侵，进而提高稳定性；
2、便于生产，实用性强。
附图说明
下面结合附图及实施例对本发明作进一步描述：
图1本案所述一种高稳定性的钙钛矿太阳能电池的实施例1的结构示意图；
图2本案所述一种高稳定性的钙钛矿太阳能电池的实施例2的结构示意图；
图3本案所述一种高稳定性的钙钛矿太阳能电池的实施例3的结构示意图；
其中：1、基底；2、电子传输层；3、钙钛矿层；4、氧化锆层；5、空穴传输层；6、电极。
具体实施方式
实施例1：
如附图1所示，一种高稳定性的钙钛矿太阳能电池，基底1，电子传输层2，钙钛矿层3，氧化锆层4，空穴传输层5和电极6；所述基底1上设置有电子传输层2；所述电子传输层2上设置有钙钛矿层3；所述钙钛矿层3上设置有空穴传输层5；所述空穴传输层5上设置有电极6；所述氧化锆层4设置在钙钛矿层3和空穴传输层5之间；所述氧化锆层4厚度为1nm；所述基底1为透明导电玻璃基底；所述钙钛矿层3为利用无机钙钛矿材料作为活性层；无机钙钛矿材料分子式为CsPb；所述电极6为金属电极或有机材料电极；所述氧化锆层4原子层沉积法（ALD）或等离子体增强化学的气相沉积法（PECVD）制备；其电子传输层2（ETL）及空穴传输层5（HTL）可为任何能够充当其功能的材料。
实施例2：
如附图2所示，一种高稳定性的钙钛矿太阳能电池，包括基底1，电子传输层2，钙钛矿层3，氧化锆层4，空穴传输层5和电极6；所述基底1上设置有电子传输层2；所述电子传输层2上设置有钙钛矿层3；所述钙钛矿层3上设置有空穴传输层5；所述空穴传输层5上设置有电极6；所述氧化锆层4设置在空穴传输层5和电极6之间；所述氧化锆层4厚度为1nm；所述基底1为透明导电玻璃基底；所述钙钛矿层3为利用无机钙钛矿材料作为活性层；无机钙钛矿材料分子式为CsPb；所述电极6为金属电极或有机材料电极；所述氧化锆层4原子层沉积法或等离子体增强化学的气相沉积法制备；其电子传输层2（ETL）及空穴传输层5（HTL）可为任何能够充当其功能的材料。
实施例3：
如附图3所示，一种高稳定性的钙钛矿太阳能电池，包括基底1，电子传输层2，钙钛矿层3，氧化锆层4，空穴传输层5和电极6；所述基底1上设置有电子传输层2；所述电子传输层2上设置有钙钛矿层3；所述钙钛矿层3上设置有空穴传输层5；所述空穴传输层5上设置有电极6；所述氧化锆层4设置在电极6顶部；所述氧化锆层4厚度为300nm；所述基底1为透明导电玻璃基底；所述钙钛矿层3为利用无机钙钛矿材料作为活性层；无机钙钛矿材料分子式为CsPb；所述电极6为金属电极或有机材料电极；所述氧化锆层4原子层沉积法或等离子体增强化学的气相沉积法制备；其电子传输层2（ETL）及空穴传输层5（HTL）可为任何能够充当其功能的材料。
上述实施例仅例示性说明本发明的原理及其功效，而非用于限制本发明的。任何熟悉此技术的人士皆可在不违背本发明的精神及范畴下，对上述实施例进行修饰或改变。因此，举凡所属技术领域中具有通常知识者在未脱离本发明的所揭示的精神与技术思想下所完成的一切等效修饰或改变，仍应由本发明的权利要求所涵盖。
Claims (7)
1.一种高稳定性的钙钛矿太阳能电池，其特征在于：包括基底，电子传输层，钙钛矿层，氧化锆层，空穴传输层和电极；所述基底上设置有电子传输层；所述电子传输层上设置有钙钛矿层；所述钙钛矿层上设置有空穴传输层；所述空穴传输层上设置有电极；所述氧化锆层设置在钙钛矿层和空穴传输层之间或空穴传输层和电极之间或电极顶部。
2.根据权利要求1所述的一种高稳定性的钙钛矿太阳能电池，其特征在于：所述氧化锆层设置在钙钛矿层和空穴传输层之间或空穴传输层和电极之间；所述氧化锆层厚度为1-3nm。
3.根据权利要求1所述的一种高稳定性的钙钛矿太阳能电池，其特征在于：所述氧化锆层设置在电极顶部；所述氧化锆层厚度为100-500nm。
4.根据权利要求1所述的一种高稳定性的钙钛矿太阳能电池，其特征在于：所述基底为透明导电玻璃基底。
5.根据权利要求1所述的一种高稳定性的钙钛矿太阳能电池，其特征在于：所述钙钛矿层为利用无机钙钛矿材料作为活性层；无机钙钛矿材料分子式为CsPb。
6.根据权利要求1所述的一种高稳定性的钙钛矿太阳能电池，其特征在于：所述电极为金属电极或有机材料电极。
7.根据权利要求1所述的一种高稳定性的钙钛矿太阳能电池，其特征在于：所述氧化锆层原子层沉积法或等离子体增强化学的气相沉积法制备。
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| CN207068927U (zh) * | 2017-08-17 | 2018-03-02 | 苏州协鑫纳米科技有限公司 | 钙钛矿太阳能电池 |
| CN109390425A (zh) * | 2018-11-28 | 2019-02-26 | 中国华能集团有限公司 | 一种高稳定性太阳能电池 |
| CN109994608A (zh) * | 2017-12-29 | 2019-07-09 | 比亚迪股份有限公司 | 一种钙钛矿电池及其制备方法 |
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| CN207068927U (zh) * | 2017-08-17 | 2018-03-02 | 苏州协鑫纳米科技有限公司 | 钙钛矿太阳能电池 |
| CN109994608A (zh) * | 2017-12-29 | 2019-07-09 | 比亚迪股份有限公司 | 一种钙钛矿电池及其制备方法 |
| CN109390425A (zh) * | 2018-11-28 | 2019-02-26 | 中国华能集团有限公司 | 一种高稳定性太阳能电池 |
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