CN109390425A - 一种高稳定性太阳能电池 - Google Patents
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Abstract
本发明公开了一种高稳定性太阳能电池，包括封装层、玻璃层、阻隔层、第一电极层、电子传输层、无机钙钛矿活性层、空穴传输层及第二电极层，其中，玻璃层、第一电极层、电子传输层、无机钙钛矿活性层、空穴传输层、阻隔层及第二电极层自下到上依次分布，封装层位于玻璃层上，且封装层包覆于阻隔层、第一电极层、电子传输层、无机钙钛矿活性层、空穴传输层及第二电极层外，该电池的稳定性较好。
Description
技术领域
本发明属于薄膜太阳能电池器件设计及制备领域，涉及一种高稳定性太阳能电池。
背景技术
随着化石能源的日益枯竭和其使用所带来的高昂的环境成本，可再生清洁能源的开发和利用受到广泛的关注。太阳能光伏发电技术和产品在全球范围内得到了高速增长，成为最具潜力的清洁能源。近年来发现的钙钛矿型太阳能电池由于高转换效率、低成本、环境友善、可挠式产品化等优点备受关注。
不过，在目前国内外的研发过程中，人们发现大部分结构的钙钛矿型太阳能电池虽然能够较为容易的获得较高的光电转换效率，但是，在测试和保存较长一段时间之后，电池器件的效能会发生明显的下降。因此稳定性差是影响钙钛矿型太阳能电池走向实际化应用的最大阻碍之一。钙钛矿型太阳能电池稳定性不佳，至少受到以下几个因素的综合影响：首先是通常使用较多的钙钛矿材料本身为无机-有机杂化结构，其中的有机基团易受到环境中水、氧及紫外光辐射等影响而发生老化、变质；其次，高效率电池的空穴传输层多使用有机材料如Spiro-OMeTAD等，而实际上这种材料的耐候性也欠佳，而如果使用CuSCN等无机材料，则需要在电池结构上进行优化，降低势垒的同时保证金、银等金属不与其发生电化学反应。
发明内容
本发明的目的在于克服上述现有技术的缺点，提供了一种高稳定性太阳能电池，该电池的稳定性较好。
为达到上述目的，本发明所述的高稳定性太阳能电池包括封装层、玻璃层、阻隔层、第一电极层、电子传输层、无机钙钛矿活性层、空穴传输层及第二电极层，其中，玻璃层、第一电极层、电子传输层、无机钙钛矿活性层、空穴传输层、阻隔层及第二电极层自下到上依次分布，封装层位于玻璃层上，且封装层包覆于阻隔层、第一电极层、电子传输层、无机钙钛矿活性层、空穴传输层及第二电极层外。
电子传输层采用原子沉积、气相沉积、磁控溅射或溶液旋涂的方法制备而成，其中，电子传输层的厚度为25nm。
无机钙钛矿活性层的材质为CsPbI3，无机钙钛矿活性层采用溶液旋涂法、气相沉积、磁控溅射或卷对卷工艺制备而成，且无机钙钛矿活性层的厚度为600nm。
空穴传输层的材质为硫氰化亚铜或碘化亚铜，且空穴传输层采用溶液旋涂法制备而成，空穴传输层的厚度为50nm。
第二电极层的材质为碳、金、银或铜，其中，当第二电极层的材质为金、银或铜时，第二电极层与空穴传输层之间设置有阻隔层，阻隔层采用溶液旋涂法制备而成，阻隔层的厚度为5-20nm。
第二电极层的厚度为60-200nm。
封装层的材质为氧化铝，封装层采用原子层沉积法制备而成，封装层的厚度为15-20nm。
本发明具有以下有益效果：
本发明所述的高稳定性太阳能电池包括封装层、玻璃层、阻隔层、第一电极层、电子传输层、无机钙钛矿活性层、空穴传输层及第二电极层，其中，阻隔层位于空穴传输层与第二电极层之间，以阻隔空穴传输层与第二电极层，保证第二电极层不与空穴传输层发生电化学反应，另外，本发明中封装层位于玻璃层上，且包覆于第一电极层、电子传输层、无机钙钛矿活性层、空穴传输层及第二电极层外，从而起到最终封装的效果，为整个器件阻隔水、氧等易于引起电池老化的因素，进一步提高太阳能电池的稳定性。
附图说明
图1为本发明的结构示意图。
其中，1为玻璃层、2为第一电极层、3为电子传输层、4为无机钙钛矿活性层、5为空穴传输层、6为阻隔层、7为第二电极层、8为封装层。
具体实施方式
下面结合附图对本发明做进一步详细描述：
如图1所示，本发明所述的高稳定性太阳能电池包括封装层8、玻璃层1、阻隔层6、第一电极层2、电子传输层3、无机钙钛矿活性层4、空穴传输层5及第二电极层7，其中，玻璃层1、第一电极层2、电子传输层3、无机钙钛矿活性层4、空穴传输层5、阻隔层6及第二电极层7自下到上依次分布，封装层8位于玻璃层1上，且封装层8包覆于阻隔层6、第一电极层2、电子传输层3、无机钙钛矿活性层4、空穴传输层5及第二电极层7外。
第一电极层2的材质为ITO、FTO或AZO，并且采用沉积法在玻璃层1上制备而成。
电子传输层3的材质为氧化锡或氧化钛，其中，氧化锡可以较为容易的制备成为平面薄膜，厚度均一且电子传导性好，与无机钙钛矿活性层4的能级更为匹配，可提高电池的最终效率。此外，相对于常用的氧化钛，电子传输层3的性质稳定，而氧化钛易受到紫外线的影响而导致性能下降，因此优选氧化锡作为电子传输层3的材料，并且电子传输层3采用原子沉积、气相沉积、磁控溅射或溶液旋涂的方法制备而成，优选的，采用溶液旋涂方法制备电子传输层3，在制备时，将商品化的氧化锡纳米粒子(直径2-20nm)悬浮液直接作为旋涂液，在第一电极层2上以2000-6000rpm，30-80s的旋涂参数进行电子传输层3的制备，其中，电子传输层3的厚度为10-45nm，优选的，采用3500rpm，60s的旋涂参数获得厚度为25nm的电子传输层3，另外，商品化的氧化锡纳米粒子易于大规模、低成本地合成，同时可以利用卷对卷制备技术，如狭缝涂布、刮刀涂布、丝网印刷、凹版印刷、喷墨涂布及喷墨印刷等进行大规模生产。
无机钙钛矿活性层4的材质为ABXnY3-n，其中，A＝Cs或Rb；B＝Pb或Sn；X＝I、Cl或Br；Y＝I、Cl或Br；n为0-3的实数，无机钙钛矿活性层材料相对于传统的有机-无机杂化钙钛矿活性层材料，由于不含稳定性差并易受水、氧及紫外光影响的有机基团，稳定性较高；同时由于选用能级合适且匹配的电子/空穴传输层材料，光电转换性能也很优秀。优选的，无机钙钛矿活性层4的材质为CsPbI3，通常采用旋涂法、气相沉积或磁控溅射方法制备而成，也可以采用适用于大规模制备的卷对卷工艺进行制备，即将活性材料的浆料通过狭缝涂布、刮刀涂布、丝网印刷、凹版印刷、喷墨涂布或喷墨印刷的方法形成。优选的，在溶液旋涂方法中其溶剂为DMF/DMSO，DMF/DMSO的体积比4:1，将钙钛矿配成质量分数为30-55％的浆料，优选的为40％；在基底上以1500-3500rpm，40-80s的旋涂参数进行不同厚度钙钛矿层的制备，优选的，采用2500rpm，60s的旋涂参数可以获得厚度为600nm左右的钙钛矿层，然后经100-165℃退火30min，优选的为135℃，得无机钙钛矿活性层4。
空穴传输层5的材质为与钙钛矿活性材料能级相匹配的无机空穴传输材料，例如一价亚铜离子的无机盐化合物，如硫氰化亚铜及碘化亚铜等，优选硫氰化亚铜。相对本领域常见的Spiro-OMeTAD、PEDOT：PSS等空穴传输层5材料，无机盐的物理及化学性质更加稳定，在强紫外光环境下的耐候性明显增强，且成本很低，同时最终电池效率并无显著降低。在制备时，硫氰化亚铜材质的空穴传输层5可采用溶液旋涂法进行制备，具体的，将硫氰化亚铜配成质量分数为2-10％的浆料，优选3％，溶剂为二乙基硫；在基底上以3000-6000rpm，30-60s的旋涂参数进行该空穴传输层5的制备，空穴传输层5的厚度为30-100nm，优选的，采用5000rpm，45s的旋涂参数获得厚度为50nm的空穴传输层5。
当第二电极层7的材质为金、银或铜时，为防止金属与硫氰化亚铜发生电化学氧化还原反应，需要在第二电极层7与空穴传输层5之间设置阻隔层6；当第二电极层7的材质为碳时，则不需要制备该阻隔层6。其中，阻隔层6的材料为经还原的石墨烯氧化物(r-GO)，经还原的石墨烯氧化物具有良好的导电性和物理、化学、电学惰性，在常规条件下性质非常稳定，可以非常有效地阻止金、银等金属单质与内层物质(如硫元素等)在通电情况下发生氧化还原反应，同时经过调控，其能级介于空穴传输层和金属电极之间，对电流传输的效率影响很小；阻隔层6可采用溶液旋涂法进行制备，具体的，将r-GO(直径0.1-1μm，厚度小于2nm)配成0.5-3mg/mL的浆料，优选1mg/mL，溶剂为氯苯；在基底上以2000-4000rpm，30-60s的旋涂参数进行阻隔层6的制备，阻隔层6的厚度为5-20nm；特别的，采用3000rpm，60s的旋涂参数获得厚度为10nm的阻隔层6。
第二电极层7的材质为银、金、铜或碳，优选银，当第二电极层7选用银材质时，则可直接使用热蒸镀法制备，第二电极层7的厚度可选60-200nm，优选为100nm。
封装层8位于玻璃层1上，且包覆于第一电极层2、电子传输层3、无机钙钛矿活性层4、空穴传输层5及第二电极层7外，封装层8起到最终的封装效果，为整个器件阻隔水、氧等易于引起电池老化的因素，进一步提高整体器件的稳定性，封装层8的材质为氧化铝，且封装层8采用原子层沉积法制备而成，具体的，两种反应气体分别为氮气(N2，纯度≥99.999％)载三甲基铝(Al(CH3)3)和水(H2O)，将两者交替以脉冲的形式充入反应室，脉冲时间优选0.015s，停留时间60s，交替一次为一个循环，使用50-300次循环制备不同厚度的氧化铝层，优选100次，制得厚度为15-20nm的封装层8。另外，封装层8可结合EVA、紫外封装胶、有机硅胶等常规封装材料进行进一步封装，相对于常规封装方法将显著提高封装效果。
Claims (7)
1.一种高稳定性太阳能电池，其特征在于，包括封装层(8)、玻璃层(1)、第一电极层(2)、电子传输层(3)、无机钙钛矿活性层(4)、空穴传输层(5)及第二电极层(7)，其中，玻璃层(1)、第一电极层(2)、电子传输层(3)、无机钙钛矿活性层(4)、空穴传输层(5)及第二电极层(7)自下到上依次分布，封装层(8)位于玻璃层(1)上，且封装层(8)包覆于第一电极层(2)、电子传输层(3)、无机钙钛矿活性层(4)、空穴传输层(5)及第二电极层(7)外；
第二电极层(7)的材质为碳、金、银或铜，其中，当第二电极层(7)的材质为金、银或铜时，第二电极层(7)与空穴传输层(5)之间设置有阻隔层(6)。
2.根据权利要求1所述的高稳定性太阳能电池，其特征在于，电子传输层(3)采用原子沉积、气相沉积、磁控溅射或溶液旋涂的方法制备而成，其中，电子传输层(3)的厚度为25nm。
3.根据权利要求1所述的高稳定性太阳能电池，其特征在于，无机钙钛矿活性层(4)的材质为CsPbI3，无机钙钛矿活性层(4)采用溶液旋涂法、气相沉积、磁控溅射或卷对卷工艺制备而成，且无机钙钛矿活性层(4)的厚度为600nm。
4.根据权利要求1所述的高稳定性太阳能电池，其特征在于，空穴传输层(5)的材质为硫氰化亚铜或碘化亚铜，且空穴传输层(5)采用溶液旋涂法制备而成，空穴传输层(5)的厚度为50nm。
5.根据权利要求1所述的高稳定性太阳能电池，其特征在于，阻隔层(6)采用溶液旋涂法制备而成，阻隔层(6)的厚度为5-20nm。
6.根据权利要求1所述的高稳定性太阳能电池，其特征在于，第二电极层(7)的厚度为60-200nm。
7.根据权利要求1所述的高稳定性太阳能电池，其特征在于，封装层(8)的材质为氧化铝，封装层(8)采用原子层沉积法制备而成，封装层(8)的厚度为15-20nm。
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110400851A (zh) * | 2019-07-31 | 2019-11-01 | 西交利物浦大学 | 一种高稳定性的钙钛矿太阳能电池 |
| CN111129183A (zh) * | 2019-12-27 | 2020-05-08 | 太原理工大学 | 一种宽带光吸收体结构及其制备方法 |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101313426A (zh) * | 2005-08-09 | 2008-11-26 | 波利普拉斯电池有限公司 | 用于被保护的活性金属阳极的适应性密封结构 |
| CN204885220U (zh) * | 2015-09-06 | 2015-12-16 | 辽宁工业大学 | 一种锡钙钛矿无机空穴太阳能电池 |
| CN107408631A (zh) * | 2015-03-16 | 2017-11-28 | 积水化学工业株式会社 | 太阳能电池 |
| CN107658387A (zh) * | 2017-09-22 | 2018-02-02 | 中国华能集团公司 | 一种使用多功能透明电极的太阳能电池及其制备方法 |
| CN208923169U (zh) * | 2018-11-28 | 2019-05-31 | 中国华能集团有限公司 | 一种高稳定性太阳能电池 |
-
2018
- 2018-11-28 CN CN201811436864.2A patent/CN109390425A/zh active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101313426A (zh) * | 2005-08-09 | 2008-11-26 | 波利普拉斯电池有限公司 | 用于被保护的活性金属阳极的适应性密封结构 |
| CN107408631A (zh) * | 2015-03-16 | 2017-11-28 | 积水化学工业株式会社 | 太阳能电池 |
| CN204885220U (zh) * | 2015-09-06 | 2015-12-16 | 辽宁工业大学 | 一种锡钙钛矿无机空穴太阳能电池 |
| CN107658387A (zh) * | 2017-09-22 | 2018-02-02 | 中国华能集团公司 | 一种使用多功能透明电极的太阳能电池及其制备方法 |
| CN208923169U (zh) * | 2018-11-28 | 2019-05-31 | 中国华能集团有限公司 | 一种高稳定性太阳能电池 |
Non-Patent Citations (1)
| Title |
|---|
| NEHA ARORA ET AL.: "Perovskite solar cells with CuSCN hole extraction layers yield stabilized efficiencies greater than 20%", 《SCIENCE》, vol. 358, no. 6364, 28 September 2017 (2017-09-28), pages 768 - 771 * |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110400851A (zh) * | 2019-07-31 | 2019-11-01 | 西交利物浦大学 | 一种高稳定性的钙钛矿太阳能电池 |
| CN111129183A (zh) * | 2019-12-27 | 2020-05-08 | 太原理工大学 | 一种宽带光吸收体结构及其制备方法 |
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