CN110400769B - Graphite frame saturation method and graphite frame - Google Patents
Graphite frame saturation method and graphite frame Download PDFInfo
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- CN110400769B CN110400769B CN201910650066.8A CN201910650066A CN110400769B CN 110400769 B CN110400769 B CN 110400769B CN 201910650066 A CN201910650066 A CN 201910650066A CN 110400769 B CN110400769 B CN 110400769B
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- graphite frame
- graphite
- frame
- drying treatment
- saturating
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- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 title claims abstract description 134
- 229910002804 graphite Inorganic materials 0.000 title claims abstract description 134
- 239000010439 graphite Substances 0.000 title claims abstract description 134
- 238000000034 method Methods 0.000 title claims abstract description 36
- 238000002161 passivation Methods 0.000 claims abstract description 36
- 238000001035 drying Methods 0.000 claims abstract description 27
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 7
- 239000012535 impurity Substances 0.000 claims abstract description 5
- 238000005406 washing Methods 0.000 claims abstract description 4
- 238000009738 saturating Methods 0.000 claims description 11
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 8
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims description 8
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 8
- 229910000077 silane Inorganic materials 0.000 claims description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 23
- 229910052710 silicon Inorganic materials 0.000 abstract description 23
- 239000010703 silicon Substances 0.000 abstract description 23
- 235000012431 wafers Nutrition 0.000 abstract description 23
- 230000002159 abnormal effect Effects 0.000 abstract description 8
- 230000000694 effects Effects 0.000 abstract description 5
- 229920006395 saturated elastomer Polymers 0.000 description 6
- 229910052581 Si3N4 Inorganic materials 0.000 description 5
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 5
- 238000000151 deposition Methods 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 238000004140 cleaning Methods 0.000 description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 230000002035 prolonged effect Effects 0.000 description 2
- 239000000428 dust Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000002791 soaking Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/673—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic System
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention relates to a graphite frame and a saturation method thereof, wherein the saturation method of the graphite frame comprises the following steps: step S1, removing impurities on the surface of the graphite frame (10) and washing with water; step S2, performing primary drying treatment on the graphite frame, wherein the temperature of the drying treatment is 150-200 ℃; step S3, performing secondary drying treatment on the graphite frame, wherein the temperature of the drying treatment is 400-450 ℃; and step S4, arranging a passivation film layer on the surface of the graphite frame. The graphite frame prepared by the graphite frame saturation method provided by the embodiment of the invention is used for passivating silicon wafers, so that the number of the silicon wafers with abnormal appearances is greatly reduced, the passivation effect of the silicon wafers is improved, and the saturation time of the graphite frame is shortened by the saturation method.
Description
Technical Field
The invention relates to the technical field of solar cells, in particular to a graphite frame and a saturation method thereof.
Background
At present, after the graphite frame is subjected to saturation treatment, a silicon wafer is placed in the graphite frame to passivate the silicon wafer, so that the periphery of the passivated silicon wafer is easy to have red edges, and the passivation effect of the silicon wafer is influenced.
Disclosure of Invention
In order to solve the above technical problems, an object of the present invention is to provide a method for saturating a graphite frame, in which the graphite frame manufactured by the method is used for passivating silicon wafers, the number of the silicon wafers with abnormal appearance is greatly reduced, the passivation effect of the silicon wafers is improved, and the saturation time of the graphite frame is shortened by the method.
Another object of the present invention is to provide a graphite frame having a surface provided with a passivation film layer by the above-mentioned saturation method.
In order to achieve the purpose, the invention adopts the following technical scheme:
the method for saturating the graphite frame according to the embodiment of the first aspect of the present invention includes the steps of:
step S1, removing impurities on the surface of the graphite frame (10) and washing with water;
step S2, performing primary drying treatment on the graphite frame, wherein the temperature of the drying treatment is 150-200 ℃;
step S3, performing secondary drying treatment on the graphite frame, wherein the temperature of the drying treatment is 400-450 ℃;
and step S4, arranging a passivation film layer on the surface of the graphite frame.
Preferably, the graphite frame is an old graphite frame, and the step S1 includes:
step S11, removing the passivation layer on the surface of the graphite frame;
step S12, after which the graphite frame is water-washed.
Preferably, in step S3, the time for performing the second drying process on the graphite frame is not less than 1 h.
Preferably, in step S3, the graphite frame is dried for the second time in a plasma enhanced chemical vapor deposition apparatus.
Further preferably, the step S4 specifically includes:
and after the graphite frame is dried for the second time in plasma enhanced chemical vapor deposition equipment, introducing ammonia gas and silane, and depositing a silicon nitride passivation film layer on the surface of the graphite frame.
Still more preferably, the gas flow rate of the ammonia gas is 1800-2000mL/min, and the gas flow rate of the silane gas is 500-700 mL/min.
Still further preferably, the process parameters for disposing the passivation film layer on the surface of the graphite frame are as follows: the temperature is 400-.
Still more preferably, the time for disposing the passivation film layer on the surface of the graphite frame is 0.5-1.5 h.
Preferably, in step S2, the first drying treatment is performed on the graphite frame by using an oven, and the treatment time is 5 to 7 hours.
According to the graphite frame of the second aspect of the present invention, the surface of the graphite frame is provided with the passivation film layer by the saturation method of the graphite frame according to any one of the above embodiments.
The invention has the beneficial effects that:
the second drying treatment is carried out on the graphite frame to fully remove the moisture in the graphite frame, then the passivation film layer is arranged on the surface of the graphite frame, so that the surface of the graphite frame is fully saturated, and the passivation film layer deposited on the surface of the graphite frame is uniform, therefore, the graphite frame prepared by the saturation method is used for passivating the silicon wafers, the number of the silicon wafers with abnormal appearances is greatly reduced, the passivation effect of the silicon wafers is improved, and the saturation time of the graphite frame is shortened by the saturation method. In addition, the cleaning period of the graphite frame is prolonged, so that the equipment capacity is increased, and the manufacturing cost is reduced.
The foregoing description is only an overview of the technical solutions of the present invention, and in order to make the technical solutions of the present invention more clearly understood and to implement them in accordance with the contents of the description, the following detailed description is given with reference to the preferred embodiments of the present invention and the accompanying drawings.
Drawings
FIG. 1 is a flow chart of a method of saturating a graphite frame in accordance with an embodiment of the present invention;
fig. 2 is a schematic structural view of a graphite frame according to an embodiment of the present invention.
Detailed Description
The following detailed description of embodiments of the present invention is provided in connection with the accompanying drawings and examples. The following examples are intended to illustrate the invention, but are not intended to limit the scope of the invention.
As shown in fig. 1 and 2, a method for saturating a graphite frame 10 according to an embodiment of the present invention includes the steps of:
and step S1, removing impurities on the surface of the graphite frame (10) and washing with water.
The method for removing the impurities on the surface of the graphite frame (10) includes the steps of removing dust and other dirt on the surface of the graphite frame (10) for a new graphite frame (10), and removing a passivation layer on the surface of the graphite frame (10) for an old graphite frame (10), wherein the old graphite frame (10) is the graphite frame (10) used for passivating a silicon wafer for a certain time, the thick passivation layer is deposited on the surface of the old graphite frame (10), so that the passivation layer is not beneficial to passivating the silicon wafer and needs to be saturated again to meet the use requirement, and the new graphite frame (10) is the unused graphite frame (10) which needs to be saturated to meet the use requirement.
According to some embodiments of the present invention, the graphite frame 10 is an old graphite frame 10, and the step S1 includes:
step S11, removing the passivation layer on the surface of the graphite frame 10;
in step S12, the graphite frame 10 is washed with water.
Step S2, performing a first drying process on the graphite frame 10, where the temperature of the drying process is 150-. To remove moisture from the surface of the graphite frame 10.
According to some embodiments of the present invention, in step S2, the graphite frame 10 is first dried by using an oven for 5-7 hours. The purpose is to sufficiently remove moisture on the surface of the graphite frame 10.
Step S3, performing a second drying process on the graphite frame 10, where the temperature of the drying process is 400-450 ℃. The purpose is to further remove moisture inside the graphite frame 10.
According to some embodiments of the present invention, in step S3, the time for performing the second drying process on the graphite frame 10 is not less than 1 h. To ensure that the moisture inside the graphite frame 10 is sufficiently removed, thereby further ensuring that the surface of the graphite frame 10 is sufficiently saturated and the passivation film layer deposited on the surface of the graphite frame 10 is uniform.
According to some embodiments of the present invention, in step S3, the graphite frame 10 is dried in a plasma enhanced chemical vapor deposition apparatus.
Step S4, a passivation film layer is disposed on the surface of the graphite frame 10.
According to some embodiments of the present invention, step S4 specifically includes:
and after the graphite frame 10 is dried for the second time in plasma enhanced chemical vapor deposition equipment, introducing ammonia gas and silane, and depositing a silicon nitride passivation film layer on the surface of the graphite frame 10.
Preferably, the gas flow rate of the ammonia gas is 1800-2000mL/min, and the gas flow rate of the silane gas is 500-700 mL/min.
Further preferably, the process parameters for arranging the passivation film layer on the surface of the graphite frame (10) are as follows: the temperature is 400-.
Still more preferably, the time for disposing the passivation film layer on the surface of the graphite frame (10) is 0.5-1.5 h.
The second drying treatment is carried out on the graphite frame 10 to fully remove the moisture in the graphite frame 10, and then the passivation film layer is arranged on the surface of the graphite frame 10, so that the surface of the graphite frame 10 is fully saturated, and the passivation film layer deposited on the surface of the graphite frame 10 is uniform, therefore, the graphite frame 10 prepared by the saturation method is used for passivating the silicon wafer, the number of the silicon wafers with abnormal appearances is greatly reduced, the passivation effect of the silicon wafers is improved, and the saturation time of the graphite frame is shortened by the saturation method. In addition, the cleaning period of the graphite frame 10 is prolonged from 15 days to 20 days, so that the equipment productivity is increased, and the manufacturing cost is reduced.
The graphite frame 10 having the passivation film layer provided on the surface thereof is manufactured by the above-described saturation method of the graphite frame 10 according to the embodiment of the present invention.
The invention is described below by means of specific examples.
Example 1
(1) Taking an old graphite frame 10, cleaning the graphite frame 10 for 8 hours by using 5-15% hydrofluoric acid to remove a silicon nitride passivation layer deposited on the surface of the graphite frame 10;
(2) rinsing the graphite frame 10 with the passivation layer removed for 0.5 hour by using pure water;
(3) soaking the graphite frame 10 for 4 hours by using pure water;
(4) drying the graphite frame 10 for the first time by using an oven, wherein the treatment temperature is 150-200 ℃ and the time is 6 hours;
(5) carrying out secondary drying treatment on the graphite frame 10 in plate type plasma enhanced chemical vapor deposition equipment, wherein the temperature of the drying treatment is 400-450 ℃, and the time of the drying treatment is 1 h;
(6) and after the graphite frame 10 is dried for the second time in plasma enhanced chemical vapor deposition equipment, introducing ammonia gas and silane, turning on a radio frequency power supply, and depositing a silicon nitride passivation film layer on the surface of the graphite frame 10, wherein the gas flow of the ammonia gas is 1800 plus 2000mL/min, the gas flow of the silane is 500 plus 700mL/min, the temperature is 400 plus 450 ℃, the power of the radio frequency power supply is 3700 plus 3900W, the radio frequency duty ratio is 4:15-4:20, and the time for depositing the passivation film layer is 1h, so that the graphite frame 10 with the silicon nitride passivation film layer on the surface is obtained.
Thus, the graphite frame 10 obtained by the graphite frame saturation method of the example of the present invention was obtained.
Meanwhile, for comparison, the graphite frame 10 was also manufactured according to the conventional saturation method of the graphite frame 10.
The graphite frame 10 manufactured in the embodiment 1 and the graphite frame 10 manufactured by the existing saturation method of the graphite frame 10 are respectively used for passivating silicon wafers and are respectively produced for 6 hours, and the number of the silicon wafers with abnormal appearances obtained by production is shown in the following table 1;
TABLE 1 number of silicon wafers produced with two types of graphite frames and having abnormal appearance
As can be seen from table 1, the number of silicon wafers having an abnormal appearance produced from the graphite frame 10 obtained in example 1 was significantly small in the first 3 hours of production, and the graphite frame 10 obtained by the conventional saturation method for the graphite frame 10 was sufficiently saturated as time passed, and the number of silicon wafers having an abnormal appearance produced from the two kinds of graphite frames 10 was almost equal.
The technical features of the embodiments described above may be arbitrarily combined, and for the sake of brevity, all possible combinations of the technical features in the embodiments described above are not described, but should be considered as being within the scope of the present specification as long as there is no contradiction between the combinations of the technical features.
The above-mentioned embodiments only express several embodiments of the present invention, and the description thereof is more specific and detailed, but not construed as limiting the scope of the invention. It should be noted that, for a person skilled in the art, several variations and modifications can be made without departing from the inventive concept, which falls within the scope of the present invention. Therefore, the protection scope of the present patent shall be subject to the appended claims.
Claims (7)
1. A method of saturating a graphite frame (10), comprising the steps of:
step S1, removing impurities on the surface of the graphite frame (10) and washing with water;
step S2, performing primary drying treatment on the graphite frame (10), wherein the temperature of the drying treatment is 150-200 ℃;
step S3, performing secondary drying treatment on the graphite frame (10) in plasma enhanced chemical vapor deposition equipment, wherein the temperature of the drying treatment is 400-450 ℃;
step S4, after the graphite frame (10) is dried for the second time, ammonia gas and silane are introduced, a passivation film layer is arranged on the surface of the graphite frame (10), and the process parameters of the passivation film layer arranged on the surface of the graphite frame (10) are as follows: the temperature is 400-.
2. The method for saturating a graphite frame (10) according to claim 1, wherein said graphite frame (10) is an old graphite frame (10), said step S1 comprising:
step S11, removing the passivation layer on the surface of the graphite frame (10);
step S12, thereafter, the graphite frame (10) is water-washed.
3. The method for saturating the graphite frame (10) according to claim 1, wherein in step S3, the time for performing the second drying process on the graphite frame (10) is not less than 1 h.
4. The method for saturating the graphite frame (10) according to claim 1, wherein in step S3, the graphite frame (10) is subjected to a second baking process in a plasma enhanced chemical vapor deposition apparatus.
5. The method for saturating a graphite frame (10) according to claim 1, wherein the gas flow rate of the ammonia gas is 1800-2000mL/min, and the gas flow rate of the silane gas is 500-700 mL/min.
6. The method for saturating the graphite frame (10) according to claim 1, wherein the time for disposing the passivation film layer on the surface of the graphite frame (10) is 0.5-1.5 h.
7. The method for saturating the graphite frame (10) according to claim 1, wherein in said step S2, said first drying process is performed on said graphite frame (10) by using an oven, and the processing time is 5-7 h.
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| CN201910650066.8A CN110400769B (en) | 2019-07-18 | 2019-07-18 | Graphite frame saturation method and graphite frame |
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| CN201910650066.8A CN110400769B (en) | 2019-07-18 | 2019-07-18 | Graphite frame saturation method and graphite frame |
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| CN112404022B (en) * | 2020-11-20 | 2022-09-09 | 苏州镓港半导体有限公司 | Method for cleaning graphite disc for MOCVD equipment |
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| CN102280396B (en) * | 2011-09-14 | 2013-04-10 | 江阴鑫辉太阳能有限公司 | Graphite boat saturated treating technology |
| CN103579057A (en) * | 2012-08-07 | 2014-02-12 | 浙江鸿禧光伏科技股份有限公司 | Method for improving graphite boat processing effect |
| CN104064503A (en) * | 2014-06-19 | 2014-09-24 | 奉化拓升商贸有限公司 | Graphite boat cleaning process |
| CN105112888B (en) * | 2015-08-27 | 2017-12-08 | 常州天合光能有限公司 | A kind of saturation process of graphite boat |
| CN105470344B (en) * | 2015-09-28 | 2017-04-26 | 阳光中科（福建）能源股份有限公司 | Method for prolonging service lifetime of graphite boat |
| CN106952805B (en) * | 2017-04-11 | 2019-12-13 | 东方日升新能源股份有限公司 | graphite boat cleaning process |
| CN107256898B (en) * | 2017-05-18 | 2018-08-03 | 广东爱旭科技股份有限公司 | Tubular type PERC double-sided solar batteries and preparation method thereof and special equipment |
| CN107287579B (en) * | 2017-06-07 | 2018-09-14 | 广东爱旭科技股份有限公司 | The filming equipment and film plating process of tubular type PERC solar cells |
| CN107564844A (en) * | 2017-07-28 | 2018-01-09 | 韩华新能源（启东）有限公司 | A kind of graphite boat saturation double membrane structure and coating process and graphite boat |
| CN107742603A (en) * | 2017-10-19 | 2018-02-27 | 西安黄河光伏科技股份有限公司 | A kind of crystal silicon solar battery graphite boat and its saturated process method |
| CN109183000B (en) * | 2018-08-20 | 2020-07-28 | 常州亿晶光电科技有限公司 | Graphite boat saturation process |
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