CN110400769A - The saturation process and graphite frame of graphite frame - Google Patents
The saturation process and graphite frame of graphite frame Download PDFInfo
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- CN110400769A CN110400769A CN201910650066.8A CN201910650066A CN110400769A CN 110400769 A CN110400769 A CN 110400769A CN 201910650066 A CN201910650066 A CN 201910650066A CN 110400769 A CN110400769 A CN 110400769A
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- graphite frame
- graphite
- frame
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- drying
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- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 title claims abstract description 139
- 229910002804 graphite Inorganic materials 0.000 title claims abstract description 139
- 239000010439 graphite Substances 0.000 title claims abstract description 139
- 238000000034 method Methods 0.000 title claims abstract description 38
- 238000002161 passivation Methods 0.000 claims abstract description 36
- 238000001035 drying Methods 0.000 claims abstract description 34
- 239000012535 impurity Substances 0.000 claims abstract description 5
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 14
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims description 8
- 229910000077 silane Inorganic materials 0.000 claims description 8
- 238000005229 chemical vapour deposition Methods 0.000 claims description 7
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 6
- 229910021529 ammonia Inorganic materials 0.000 claims description 6
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 6
- 239000004575 stone Substances 0.000 claims description 3
- 230000002708 enhancing effect Effects 0.000 claims 1
- 239000000126 substance Substances 0.000 claims 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 23
- 229910052710 silicon Inorganic materials 0.000 abstract description 23
- 239000010703 silicon Substances 0.000 abstract description 23
- 230000002159 abnormal effect Effects 0.000 abstract description 8
- 230000000694 effects Effects 0.000 abstract description 5
- 229920006395 saturated elastomer Polymers 0.000 description 6
- 238000000151 deposition Methods 0.000 description 5
- 230000008021 deposition Effects 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/673—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic System
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Carbon And Carbon Compounds (AREA)
Abstract
The present invention relates to the saturation process of graphite frame and graphite frames, wherein the saturation process of graphite frame includes the following steps: step S1, removes the surface impurity of the graphite frame (10) and is washed；Step S2 carries out first time drying and processing to the graphite frame, and the temperature of the drying and processing is 150-200 DEG C；Step S3 carries out second of drying and processing to the graphite frame, and the temperature of the drying and processing is 400-450 DEG C；Passivation film is arranged on the surface of the graphite frame in step S4.Graphite frame made from saturation process using the graphite frame of the embodiment of the present invention is for being passivated silicon wafer, and the quantity of the biggish silicon wafer for reducing abnormal appearance improves the passivation effect of silicon wafer, and the saturation process shortens the saturation time of graphite frame.
Description
Technical field
The present invention relates to technical field of solar batteries, and in particular to a kind of saturation process and graphite frame of graphite frame.
Background technique
After carrying out saturated process to graphite frame at present, silicon wafer is placed in graphite frame silicon wafer is passivated it is obtained blunt
The periphery of silicon wafer after change is easy to appear red side, influences the passivation effect of silicon wafer.
Summary of the invention
In order to solve the above technical problems, being used it is an object of the present invention to provide a kind of saturation process of graphite frame
For being passivated to silicon wafer, the quantity of the biggish silicon wafer for reducing abnormal appearance changes graphite frame made from the saturation process
The passivation effect of silicon wafer has been apt to it, and the saturation process shortens the saturation time of graphite frame.
It is another object of the present invention to provide a kind of surfaces to be provided with the stone of passivation film by above-mentioned saturation process
Black frame.
In order to achieve the above objectives, the present invention adopts the following technical scheme:
The saturation process of the graphite frame of embodiment according to a first aspect of the present invention, includes the following steps:
Step S1 removes the surface impurity of the graphite frame (10) and is washed；
Step S2 carries out first time drying and processing to the graphite frame, and the temperature of the drying and processing is 150-200 DEG C；
Step S3 carries out second of drying and processing to the graphite frame, and the temperature of the drying and processing is 400-450 DEG C；
Passivation film is arranged on the surface of the graphite frame in step S4.
Preferably, the graphite frame is old graphite frame, and the step S1 includes:
Step S11 removes the passivation layer on the surface of the graphite frame；
Hereafter step S12 washes the graphite frame.
Preferably, in the step S3, is carried out not less than 1h the time of second of drying and processing to the graphite frame.
Preferably, in the step S3, the is carried out to the graphite frame in plasma reinforced chemical vapour deposition equipment
Secondary drying processing.
It is further preferred that the step S4 is specifically included:
After carrying out second of drying and processing to the graphite frame in plasma reinforced chemical vapour deposition equipment, it is passed through ammonia
Gas and silane, in the surface deposited silicon nitride passivation film of the graphite frame.
It is further preferred that the gas flow of the ammonia is 1800-2000mL/min, the gas flow of the silane
For 500-700mL/min.
It is further preferred that in the technological parameter of the surface of graphite frame setting passivation film are as follows: temperature 400-450
DEG C, radio-frequency power supply power 3700-3900W, radio frequency duty-cycle 4:15-4:20.
It is further preferred that being 0.5-1.5h in the time of the surface of graphite frame setting passivation film.
Preferably, in the step S2, the first time drying and processing carried out to the graphite frame using baking oven, when processing
Between be 5-7h.
The surface of the graphite frame of embodiment according to a second aspect of the present invention, the graphite frame passes through any of the above-described embodiment institute
The saturation process for the graphite frame stated is provided with passivation film.
The beneficial effects of the present invention are:
By carrying out second of drying and processing sufficiently to remove the moisture in graphite frame, then in graphite frame to graphite frame
Passivation film is arranged in surface, is saturated the surface of graphite frame sufficiently, and the passivation film of graphite frame surface deposition is uniform, from
And use graphite frame made from the saturation process for being passivated to silicon wafer, the number of the biggish silicon wafer for reducing abnormal appearance
Amount, improves the passivation effect of silicon wafer, and the saturation process shortens the saturation time of graphite frame.In addition graphite frame is extended
Cleaning frequency reduces manufacturing cost to increase equipment capacity.
The above description is only an overview of the technical scheme of the present invention, in order to better understand the technical means of the present invention,
And can be implemented in accordance with the contents of the specification, the following is a detailed description of the preferred embodiments of the present invention and the accompanying drawings.
Detailed description of the invention
Fig. 1 is the flow chart of the saturation process of the graphite frame of the embodiment of the present invention；
Fig. 2 is the structural schematic diagram of the graphite frame of the embodiment of the present invention.
Specific embodiment
With reference to the accompanying drawings and examples, specific embodiments of the present invention will be described in further detail.Implement below
Example is merely to illustrate the present invention, but is not intended to limit the scope of the invention.
As depicted in figs. 1 and 2, the saturation process of graphite frame 10 according to an embodiment of the present invention, includes the following steps:
Step S1 removes the surface impurity of the graphite frame (10) and is washed.
It should be noted that the surface impurity of removal graphite frame (10) refers to removal graphite for new graphite frame 10
The dust on the surface of frame 10 and other dirts refer to the passivation layer on removal 10 surface of graphite frame for old graphite frame 10,
In, old graphite frame 10 refers to that, for being passivated the graphite frame 10 using certain time to silicon wafer, the surface of old graphite frame 10 is heavy
Product has thicker passivation layer, to be unfavorable for being passivated silicon wafer, needs again to its saturated process to reach requirement,
New graphite frame 10 refers to the original graphite frame 10 for needing to carry out it saturated process to reach requirement.
According to some embodiments of the present invention, graphite frame 10 is old graphite frame 10, and step S1 includes:
Step S11 removes the passivation layer on the surface of the graphite frame 10；
Hereafter step S12 washes the graphite frame 10.
Step S2 carries out first time drying and processing to the graphite frame 10, and the temperature of the drying and processing is 150-200
℃.To remove the moisture on the surface of graphite frame 10.
According to some embodiments of the present invention, in step S2, first time drying and processing is carried out to graphite frame 10 using baking oven,
The processing time is 5-7h.For the purpose of the moisture on surface for sufficiently removing graphite frame 10.
Step S3 carries out second of drying and processing to the graphite frame 10, and the temperature of the drying and processing is 400-450
℃.For the purpose of further removing the moisture inside graphite frame 10.
According to some embodiments of the present invention, in step S3, second of drying and processing is carried out to the graphite frame 10
Time be not less than 1h.To ensure sufficiently to remove the moisture inside graphite frame 10, to further ensure the table of graphite frame 10
Face is sufficiently saturated and the passivation film of 10 surface of graphite frame deposition is uniform.
According to some embodiments of the present invention, in step S3, to graphite in plasma reinforced chemical vapour deposition equipment
Frame 10 carries out second of drying and processing.
Passivation film is arranged on the surface of the graphite frame 10 in step S4.
According to some embodiments of the present invention, step S4 is specifically included:
After carrying out second of drying and processing to graphite frame 10 in plasma reinforced chemical vapour deposition equipment, it is passed through ammonia
And silane, in the surface deposited silicon nitride passivation film of the graphite frame 10.
Preferably, the gas flow of ammonia is 1800-2000mL/min, and the gas flow of silane is 500-700mL/min.
It is further preferred that in the technological parameter of the surface of graphite frame (10) setting passivation film are as follows: temperature 400-450
DEG C, radio-frequency power supply power 3700-3900W, radio frequency duty-cycle 4:15-4:20.
It is further preferred that being 0.5-1.5h in the time of the surface of the graphite frame (10) setting passivation film.
By carrying out second of drying and processing sufficiently to remove the moisture in graphite frame 10, then in graphite to graphite frame 10
Passivation film is arranged in the surface of frame 10, is saturated the surface of graphite frame 10 sufficiently, and the passivation of 10 surface of graphite frame deposition
Even film layer, thus using graphite frame 10 made from the saturation process for being passivated to silicon wafer, it is biggish to reduce appearance
The quantity of abnormal silicon wafer, improves the passivation effect of silicon wafer, and the saturation process shortens the saturation time of graphite frame.In addition
The cleaning frequency for extending graphite frame 10 extended to 20 days by original 15 days, to increase equipment capacity, reduces manufacture
Cost.
Surface is provided with the stone of passivation film by the saturation process of above-mentioned graphite frame 10 according to an embodiment of the present invention
Black frame 10.
The present invention is described below by specific embodiment.
Embodiment 1
(1) old graphite frame 10 is taken, 8 hours removal graphite frames 10 are cleaned to graphite frame 10 using 5%~15% hydrofluoric acid
The silicon nitride passivation of surface deposition；
(2) rinsing 0.5 hour is carried out to the graphite frame 10 after removal passivation layer using pure water；
(3) graphite frame 10 is impregnated 4 hours using pure water；
(4) first time drying and processing is carried out to graphite frame 10 using baking oven, treatment temperature is 150 DEG C~200 DEG C, and the time is
6 hours；
(5) second of drying and processing is carried out to graphite frame 10 in board-like plasma reinforced chemical vapour deposition equipment, dried
The temperature of dry-cure is 400-450 DEG C, and the time of drying and processing is 1h；
(6) it after carrying out second of drying and processing to graphite frame 10 in plasma reinforced chemical vapour deposition equipment, is passed through
Ammonia and silane open radio-frequency power supply, in the surface deposited silicon nitride passivation film of graphite frame 10, wherein the gas stream of ammonia
Amount is 1800-2000mL/min, and the gas flow of silane is 500-700mL/min, 400-450 DEG C of temperature, radio-frequency power supply power
3700-3900W, radio frequency duty-cycle 4:15-4:20, the time for depositing passivation film is 1h, obtains to surface that be provided with silicon nitride blunt
Change the graphite frame 10 of film layer.
Graphite frame 10 made from the saturation process of the graphite frame of the embodiment of the present invention is obtained as a result,.
Meanwhile in order to compare, graphite frame 10 is made also according to the saturation process of existing graphite frame 10.
Graphite frame 10 made from the saturation process of graphite frame 10 and existing graphite frame 10 made from embodiment 1 is respectively used to
Silicon wafer is passivated, produces 6 hours respectively, the quantity of the silicon wafer of the abnormal appearance produced is as shown in table 1 below；
The quantity of the silicon wafer for the abnormal appearance that 1 two kinds of graphite frames of table produce
As shown in Table 1, preceding 3 hours of production, graphite frame 10 made from embodiment 1 produce the silicon of obtained abnormal appearance
The quantity of piece is obviously less, with the extension of time, graphite frame 10 made from the saturation process of existing graphite frame 10 also obtains
Abundant saturation is remained basically stable using the quantity that two kinds of graphite frames 10 produce the silicon wafer of obtained abnormal appearance.
Each technical characteristic of embodiment described above can be combined arbitrarily, for simplicity of description, not to above-mentioned reality
It applies all possible combination of each technical characteristic in example to be all described, as long as however, the combination of these technical characteristics is not deposited
In contradiction, all should be considered as described in this specification.
The embodiments described above only express several embodiments of the present invention, and the description thereof is more specific and detailed, but simultaneously
It cannot therefore be construed as limiting the scope of the patent.It should be pointed out that coming for those of ordinary skill in the art
It says, without departing from the inventive concept of the premise, various modifications and improvements can be made, these belong to protection of the invention
Range.Therefore, the scope of protection of the patent of the invention shall be subject to the appended claims.
Claims (10)
1. a kind of saturation process of graphite frame (10), which comprises the steps of:
Step S1 removes the surface impurity of the graphite frame (10) and is washed；
Step S2 carries out first time drying and processing to the graphite frame (10), and the temperature of the drying and processing is 150-200 DEG C；
Step S3 carries out second of drying and processing to the graphite frame (10), and the temperature of the drying and processing is 400-450 DEG C；
Passivation film is arranged on the surface of the graphite frame (10) in step S4.
2. the saturation process of graphite frame (10) according to claim 1, which is characterized in that the graphite frame (10) is old stone
Black frame (10), the step S1 include:
Step S11 removes the passivation layer on the surface of the graphite frame (10)；
Hereafter step S12 washes the graphite frame (10).
3. the saturation process of graphite frame (10) according to claim 1, which is characterized in that in the step S3, to described
The time that graphite frame (10) carries out second of drying and processing is not less than 1h.
4. the saturation process of graphite frame (10) according to claim 1, which is characterized in that in the step S3, Yu Dengli
Second of drying and processing is carried out to the graphite frame (10) in son enhancing chemical vapor depsotition equipment.
5. the saturation process of graphite frame (10) according to claim 4, which is characterized in that the step S4 is specifically included:
After carrying out second of drying and processing to the graphite frame (10) in plasma reinforced chemical vapour deposition equipment, it is passed through ammonia
Gas and silane, in the surface deposited silicon nitride passivation film of the graphite frame (10).
6. the saturation process of graphite frame (10) according to claim 5, which is characterized in that the gas flow of the ammonia is
1800-2000mL/min, the gas flow of the silane are 500-700mL/min.
7. the saturation process of graphite frame (10) according to claim 6, which is characterized in that the table in the graphite frame (10)
The technological parameter of face setting passivation film are as follows: 400-450 DEG C of temperature, radio-frequency power supply power 3700-3900W, radio frequency duty-cycle 4:
15-4:20。
8. the saturation process of graphite frame (10) according to claim 7, which is characterized in that the table in the graphite frame (10)
The time that passivation film is arranged in face is 0.5-1.5h.
9. the saturation process of graphite frame (10) according to claim 1, which is characterized in that in the step S2, use baking
Case carries out the first time drying and processing to the graphite frame (10), and the processing time is 5-7h.
10. a kind of graphite frame (10), which is characterized in that the surface of the graphite frame (10) passes through any one of claim 1-9
The saturation process of the graphite frame (10) is provided with passivation film.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201910650066.8A CN110400769B (en) | 2019-07-18 | 2019-07-18 | Graphite frame saturation method and graphite frame |
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| CN201910650066.8A CN110400769B (en) | 2019-07-18 | 2019-07-18 | Graphite frame saturation method and graphite frame |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112404022A (en) * | 2020-11-20 | 2021-02-26 | 苏州镓港半导体有限公司 | Method for cleaning graphite disc for MOCVD equipment |
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