CN110400696A - A kind of manufacturing process of the single-layer capacitor with golden tin solder - Google Patents
A kind of manufacturing process of the single-layer capacitor with golden tin solder Download PDFInfo
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- CN110400696A CN110400696A CN201910693598.XA CN201910693598A CN110400696A CN 110400696 A CN110400696 A CN 110400696A CN 201910693598 A CN201910693598 A CN 201910693598A CN 110400696 A CN110400696 A CN 110400696A
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- tin solder
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- golden
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- 229910000679 solder Inorganic materials 0.000 title claims abstract description 60
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 title claims abstract description 59
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 26
- 239000003990 capacitor Substances 0.000 title claims abstract description 25
- 239000002356 single layer Substances 0.000 title claims abstract description 25
- 239000010410 layer Substances 0.000 claims abstract description 71
- 239000000758 substrate Substances 0.000 claims abstract description 32
- 238000004544 sputter deposition Methods 0.000 claims abstract description 25
- 239000000919 ceramic Substances 0.000 claims abstract description 24
- JVPLOXQKFGYFMN-UHFFFAOYSA-N gold tin Chemical compound [Sn].[Au] JVPLOXQKFGYFMN-UHFFFAOYSA-N 0.000 claims abstract description 23
- 238000000034 method Methods 0.000 claims abstract description 22
- 238000004140 cleaning Methods 0.000 claims abstract description 9
- 238000005476 soldering Methods 0.000 claims abstract description 7
- 238000001035 drying Methods 0.000 claims abstract description 6
- 238000012360 testing method Methods 0.000 claims abstract description 6
- 238000001755 magnetron sputter deposition Methods 0.000 claims abstract description 5
- 239000010931 gold Substances 0.000 claims description 16
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 15
- 229910052737 gold Inorganic materials 0.000 claims description 15
- 238000010438 heat treatment Methods 0.000 claims description 14
- 238000012544 monitoring process Methods 0.000 claims description 14
- 229910001128 Sn alloy Inorganic materials 0.000 claims description 10
- 238000005245 sintering Methods 0.000 claims description 8
- 229910045601 alloy Inorganic materials 0.000 claims description 7
- 239000000956 alloy Substances 0.000 claims description 7
- 238000005520 cutting process Methods 0.000 claims description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N nitrogen Substances N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 4
- 230000001681 protective effect Effects 0.000 claims description 4
- 229910052757 nitrogen Inorganic materials 0.000 claims description 3
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 claims description 2
- 238000005516 engineering process Methods 0.000 abstract description 9
- 238000004806 packaging method and process Methods 0.000 abstract description 6
- 238000005538 encapsulation Methods 0.000 abstract description 4
- 230000009286 beneficial effect Effects 0.000 abstract description 2
- 239000000047 product Substances 0.000 description 7
- 238000005530 etching Methods 0.000 description 5
- 239000007789 gas Substances 0.000 description 3
- 238000001259 photo etching Methods 0.000 description 3
- 229920002120 photoresistant polymer Polymers 0.000 description 3
- 238000002360 preparation method Methods 0.000 description 3
- 238000004891 communication Methods 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 230000000149 penetrating effect Effects 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- 238000003466 welding Methods 0.000 description 2
- 229910000967 As alloy Inorganic materials 0.000 description 1
- 229910015363 Au—Sn Inorganic materials 0.000 description 1
- -1 Ni Layer Substances 0.000 description 1
- 238000013475 authorization Methods 0.000 description 1
- 239000003985 ceramic capacitor Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 230000005496 eutectics Effects 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 239000004615 ingredient Substances 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 239000011265 semifinished product Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 239000013077 target material Substances 0.000 description 1
- 229910000648 terne Inorganic materials 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/002—Details
- H01G4/005—Electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/002—Details
- H01G4/005—Electrodes
- H01G4/008—Selection of materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/002—Details
- H01G4/224—Housing; Encapsulation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/002—Details
- H01G4/018—Dielectrics
- H01G4/06—Solid dielectrics
- H01G4/08—Inorganic dielectrics
- H01G4/12—Ceramic dielectrics
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
Abstract
A kind of manufacturing process of the single-layer capacitor with golden tin solder, belongs to capacitor and its manufacturing process technology field.Technical scheme steps are as follows: preparing ceramic substrate and cleaning, drying；Lower surface forms electrode layer on a ceramic substrate；Golden tin solder layer is formed using the method for magnetron sputtering in electrode layer upper surface；Cut simultaneously testing, sorting.Beneficial effect is: the manufacturing process of the single-layer capacitor of the present invention with golden tin solder, the technique are used to improve the packaging efficiency of single-layer capacitor, reduce the cost of encapsulation golden tin solder used；Using gold tin solder made of sputtering technology, simple process, speed is controllable, and production cost is low, and whole pollution-free and made golden tin solder function admirable in high-temperature soldering ensure that the stability of product, be suitable for industrialized production.
Description
Technical field
The invention belongs to capacitor and its manufacturing process technology field more particularly to a kind of single layer electricity with golden tin solder
The manufacturing process of container is the important process method for guaranteeing microelectronic product assembly welding reliability.
Background technique
Single-layer capacitor has the characteristics that small in size, capacity is big, applying frequency is high, is widely used in electronics, radar, navigation
With satellite communication etc..It is dielectric layer among traditional single-layer capacitor, each one layer of electrode layer, lower electrode pass through golden tin up and down
The solders such as alloy or terne metal are welded in circuit, and top electrode is connected by gold wire bonding technology with other circuit elements.When
When Jin Yuxi mass ratio is 80:20 in golden tin solder, it is in Au-Sn eutectic position, at this point, the temperature of very little can just make solder
It melts and infiltrates, be therefore widely used in communication, satellite, aviation, the device welding and encapsulation in the fields such as radar.
At present gold tin solder preparation process there is several methods that: application publication number be CN109628885A Chinese invention it is special
Benefit application discloses a kind of preset golden tin solder production method based on ceramics, using evaporation coating method, but the method
Stock utilization is too low, considerably increases production cost；Authorization Notice No. is the Chinese utility model patent of CN 207743077U
It disclosing a kind of golden soldering disk single-layer ceramic capacitor but electroplating technology is used to prepare golden soldering disk, technology difficulty coefficient is high,
The problems such as very high to the control requirement of bath solution composition and temperature, and there are electroplate liquid pollutions, it is difficult to meet environmental requirements.
Summary of the invention
In order to solve above-mentioned problems of the prior art, the present invention provides a kind of single layer capacitor with golden tin solder
The manufacturing process of device, the technique are used to improve the packaging efficiency of single-layer capacitor, reduce the cost of encapsulation golden tin solder used；It adopts
The gold tin solder made of sputtering technology, simple process, speed is controllable, and production cost is low, whole pollution-free and made
Golden tin solder function admirable in high-temperature soldering, ensure that the stability of product, be suitable for industrialized production.
Technical solution is as follows:
A kind of manufacturing process of the single-layer capacitor with golden tin solder, steps are as follows:
S1, ceramic substrate and cleaning, drying are prepared；
S2, on a ceramic substrate lower surface form electrode layer；
S3, golden tin solder layer is formed using the method for magnetron sputtering in electrode layer upper surface；
S4, cutting and testing, sorting.
Further, the golden tin solder layer is formed using the method for magnetron sputtering, is directly sputtered gold-tin alloy layer or is divided
Not Jian She layer gold, tin layers carry out alloy treatment again.
Further, the golden tin solder layer uses the quality of Jin Yuxi using gold-tin alloy mode, target is directly sputtered
Than the gold-tin alloy for 80:20, cavity heating temperature is 100 DEG C -500 DEG C, vacuum degree 10-6-10-7MTorr, power are
500W-4000W, time 50s-1000s, the substrate speed of service are 50-300cm/min, while being supervised using X-Ray or step instrument
Survey sputtering film thickness.
Further, the golden tin solder layer using layer gold, tin layers mode is sputtered respectively, wherein the target purity of gold and tin
It is all 99.99%, cavity heating temperature is 100 DEG C -500 DEG C, vacuum degree 10-6-10-7MTorr, power 500W-4000W,
Time is 50s-1000s, and the substrate speed of service is 50-300cm/min, while sputtering film thickness using X-Ray or step instrument monitoring,
Repeat the above steps n circulation, and wherein the value range of n is 1-10.
Further, one layer of gold is sputtered in layer gold and tin layers and does protective film, and cavity heating temperature is 100-500 DEG C, very
Reciprocal of duty cycle is 10-6-10-7MTorr, power 500W-4000W, time 50s-1000s.
Further, multilayer film is subjected to high temperature alloy sintering, and then forms golden tin soldering alloys, wherein sintering temperature is
300-400 DEG C, sintering time is 1-10 minutes, and atmosphere is nitrogen protection.
Further, golden tin solder layer is sputtered in the up or down electrode surface single side of ceramic substrate, or in upper and lower electricity
Pole surface double-faced sputter gold tin solder layer.
The beneficial effects of the present invention are:
The manufacturing process of single-layer capacitor of the present invention with golden tin solder, the technique are used to improve single layer capacitor
The packaging efficiency of device reduces the cost of encapsulation golden tin solder used；Using gold tin solder made of sputtering technology, simple process,
Speed is controllable, and production cost is low, and whole pollution-free and made golden tin solder function admirable in high-temperature soldering guarantees
The stability of product is suitable for industrialized production.
Detailed description of the invention
Fig. 1 is the structure chart of single-layer capacitor in the present invention；
Wherein appended drawing reference is as follows in figure: electrode, 4- gold tin solder layer under 1- top electrode, 2- ceramic dielectric, 3-.
Specific embodiment
The manufacturing process of 1 pair of single-layer capacitor with golden tin solder is described further with reference to the accompanying drawing.
Embodiment 1
A kind of single-layer capacitor with golden tin solder, including golden tin solder layer, lower electrode layer, dielectric layer, upper electrode layer.
Gold tin solder layer therein is formed using sputtering technology, is attached to upper electrode layer or lower electrode layer or upper and lower two electrodes
On layer, golden tin solder layer with a thickness of 0.1-100um, the preparation method is as follows:
If gold tin solder layer therein, which uses, directly sputters gold-tin alloy technique, following steps:
Step 1 prepares ceramic substrate and cleaning, drying；
Lower surface forms electrode layer to step 2 on a ceramic substrate by the way of vapor deposition or sputtering；
The ceramic substrate for forming upper/lower electrode is put into vacuum magnetic-control sputtering machine by step 3, by the way of d.c. sputtering
Golden tin solder layer is sputtered, substrate is using rotation and revolution mode；
Step 4 sputters golden tin solder layer: target uses the mass ratio of Jin Yuxi for the gold-tin alloy of 80:20, cavity heating
Temperature is 100-500 DEG C, vacuum degree 10-6-10-7MTorr, power 500W-4000W, time 50s-1000s, using X-
Ray or step instrument monitoring sputtering film thickness are 0.1-100um, while using on-line monitoring system, and real-time monitoring sputters film thickness；
For step 5 according to the requirement of different ceramic substrate performances, partial substrate only need to be in top electrode or lower electrode surface single side
Golden tin solder layer is sputtered, partial substrate needs tow sides to sputter；
Step 6 gold tin solder layer turns off heating device after sputtering, and is filled with gas, takes out workpiece；
Above-mentioned semi-finished product are carried out the process such as conventional photoetching, etching, plating, cleaning by step 7；
Step 8 cuts testing, sorting；
Step 9 product packaging.
Embodiment 2
If gold tin solder layer therein carries out heat treatment process using gold and tin layering sputtering again, following steps:
Step 1 prepares ceramic substrate and cleaning, drying；
Lower surface forms electrode layer to step 2 on a ceramic substrate by the way of vapor deposition or sputtering；
The ceramic substrate for forming upper/lower electrode is put into vacuum magnetic-control sputtering machine by step 3, by the way of d.c. sputtering
Golden tin solder layer is sputtered, substrate is using rotation and revolution mode；
Step 4 sputters layer gold: target uses purity for 99.99% gold target material.Cavity heating temperature is 100-500 DEG C, very
Reciprocal of duty cycle is 10-6-10-7MTorr, power 500W-4000W, time 50s-1000s are splashed using X-Ray or step instrument monitoring
Penetrating film thickness is 0.1-100um, while using on-line monitoring system, and real-time monitoring sputters film thickness；
Step 5 sputters tin layers: target uses purity for 99.99% tin target.Cavity heating temperature is 100-500 DEG C, very
Reciprocal of duty cycle is 10-6-10-7MTorr, power 500W-4000W, time 50s-1000s are splashed using X-Ray or step instrument monitoring
Penetrating film thickness is 0.1-100um, while using on-line monitoring system, and real-time monitoring sputters film thickness；
Step 6 repeats Step 4: step 5 n circulation, wherein n is 1-10；
Step 7 sputters protective film: sputtering one layer of gold again on gold and multilayer tin film and does protective film, cavity heating temperature is
100-500 DEG C, vacuum degree 10-6-10-7MTorr, power 500W-4000W, time 50s-1000s；
For step 8 according to the requirement of different ceramic substrate performances, partial substrate only need to be in top electrode or lower electrode surface single side
Golden tin solder layer is sputtered, partial substrate needs tow sides to sputter；
Step 9 takes out multilayer film and carries out high temperature alloy sintering, and temperature is 300-400 DEG C, preferably 320-380 DEG C, is sintered
Time is 1-10 minutes, and preferably 6 minutes, atmosphere was nitrogen protection；
Above-mentioned half product is carried out the process such as conventional photoetching, etching, plating, cleaning by step 10；
Step 11 cutting and testing, sorting；
Step 12 product packaging.
Embodiment 3
A kind of single-layer capacitor with golden tin solder, including golden tin solder layer, lower electrode layer, dielectric layer, upper electrode layer.
It is as follows using directly sputtering gold-tin alloy preparation process:
1. preparing ceramic substrate: ceramic powder pass through ingredient, be cast, cut, sintering, grinding etc. techniques be made 60mm ×
60mm × 0.5mm size substrate；
2. cleaning, drying ceramic substrate: substrate is 30 minutes ultrasonic in 65 DEG C of water bath；It is then placed in constant temperature oven
In 200 DEG C dry 30 minutes；
3. preparing upper/lower electrode layer: ceramic substrate surface sputtering or electrode evaporation layer after cleaning, respectively TiW layers, Ni
Layer, Au layers, with a thickness of
4. sputtering golden tin solder layer: the ceramic substrate for forming upper/lower electrode being put into vacuum magnetic-control sputtering machine, using straight
The mode of stream sputtering sputters golden tin solder layer, and substrate uses the mass ratio of Jin Yuxi for 80 using rotation and revolution mode, target:
20 gold-tin alloy, cavity heating temperature are 400 DEG C, vacuum degree 10-5Pa, time 500s, while using on-line monitoring system
System, it is 6um that real-time monitoring, which sputters film thickness, only carries out one side sputtering.After turn off heating device, be filled with gas, take out workpiece；
5. heat treatment: the ceramic substrate after metallization is put into baking oven, in air atmosphere, 350 DEG C of temperature setting, the time 3
Hour, it is heat-treated；
6. photoetching: photoresist is positive photoresist, thickness 3um, time for exposure 10s, after developing, removing photoresist
7. etching: etching the figure of needs with etching liquid；
8. cutting: will be affixed on UV film and cut using automatic gas cutting machine；
9. product packaging after testing, sorting.
The foregoing is only a preferred embodiment of the present invention, but scope of protection of the present invention is not limited thereto,
Anyone skilled in the art within the technical scope of the present disclosure, according to the technique and scheme of the present invention and its
Inventive concept is subject to equivalent substitution or change, should be covered by the protection scope of the present invention.
Claims (7)
1. a kind of manufacturing process of the single-layer capacitor with golden tin solder, which is characterized in that steps are as follows:
S1, ceramic substrate and cleaning, drying are prepared；
S2, on a ceramic substrate lower surface form electrode layer；
S3, golden tin solder layer is formed using the method for magnetron sputtering in electrode layer upper surface；
S4, cutting and testing, sorting.
2. the manufacturing process of the single-layer capacitor as described in claim 1 with golden tin solder, which is characterized in that the gold tin
Solder layer is formed using the method for magnetron sputtering, is directly sputtered gold-tin alloy layer or is sputtered layer gold respectively, tin layers carry out alloy again
Processing.
3. the manufacturing process of the single-layer capacitor as claimed in claim 2 with golden tin solder, which is characterized in that the gold tin
Solder layer uses the mass ratio of Jin Yuxi for the gold-tin alloy of 80:20 using gold-tin alloy mode, target is directly sputtered, and cavity adds
Hot temperature is 100 DEG C -500 DEG C, vacuum degree 10-6-10-7MTorr, power 500W-4000W, time 50s-1000s, base
The piece speed of service is 50-300cm/min, while using X-Ray or step instrument monitoring sputtering film thickness.
4. the manufacturing process of the single-layer capacitor as claimed in claim 2 with golden tin solder, which is characterized in that the gold tin
Solder layer is using sputtering layer gold, tin layers mode respectively, wherein the target purity of gold and tin is all 99.99%, cavity heating temperature
It is 100 DEG C -500 DEG C, vacuum degree 10-6-10-7MTorr, power 500W-4000W, time 50s-1000s, substrate operation
Speed is 50-300cm/min, while using X-Ray or step instrument monitoring sputtering film thickness, repeat the above steps n circulation, wherein
The value range of n is 1-10.
5. the manufacturing process of the single-layer capacitor with golden tin solder as claimed in claim 4, which is characterized in that in layer gold and
One layer of gold is sputtered in tin layers and does protective film, and cavity heating temperature is 100-500 DEG C, vacuum degree 10-6-10-7MTorr, power are
500W-4000W, time 50s-1000s.
6. the manufacturing process of the single-layer capacitor as claimed in claim 5 with golden tin solder, which is characterized in that by multilayer film
High temperature alloy sintering is carried out, and then forms golden tin soldering alloys, wherein sintering temperature is 300-400 DEG C, sintering time 1-10
Minute, atmosphere is nitrogen protection.
7. the manufacturing process of the single-layer capacitor as described in claim 1 with golden tin solder, which is characterized in that in ceramic base
The up or down electrode surface single side of piece sputters golden tin solder layer, or in upper and lower electrode surface double-faced sputter gold tin solder layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910693598.XA CN110400696A (en) | 2019-07-29 | 2019-07-29 | A kind of manufacturing process of the single-layer capacitor with golden tin solder |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910693598.XA CN110400696A (en) | 2019-07-29 | 2019-07-29 | A kind of manufacturing process of the single-layer capacitor with golden tin solder |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN110400696A true CN110400696A (en) | 2019-11-01 |
Family
ID=68326578
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201910693598.XA Pending CN110400696A (en) | 2019-07-29 | 2019-07-29 | A kind of manufacturing process of the single-layer capacitor with golden tin solder |
Country Status (1)
| Country | Link |
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| CN (1) | CN110400696A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112259377A (en) * | 2020-09-16 | 2021-01-22 | 大连达利凯普科技股份公司 | Process for solving burr problem after single-layer ceramic capacitor scribing |
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|---|---|---|---|---|
| CN1601673A (en) * | 2004-08-31 | 2005-03-30 | 梁颖光 | Method for preparing single-layer capacitor element and its products |
| CN103170765A (en) * | 2013-03-05 | 2013-06-26 | 中国工程物理研究院应用电子学研究所 | Preparation method for gold-tin eutectic solder |
| CN207743077U (en) * | 2017-12-26 | 2018-08-17 | 广州天极电子科技有限公司 | A kind of gold soldering disk single-layer ceramic capacitor |
-
2019
- 2019-07-29 CN CN201910693598.XA patent/CN110400696A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1601673A (en) * | 2004-08-31 | 2005-03-30 | 梁颖光 | Method for preparing single-layer capacitor element and its products |
| CN103170765A (en) * | 2013-03-05 | 2013-06-26 | 中国工程物理研究院应用电子学研究所 | Preparation method for gold-tin eutectic solder |
| CN207743077U (en) * | 2017-12-26 | 2018-08-17 | 广州天极电子科技有限公司 | A kind of gold soldering disk single-layer ceramic capacitor |
Non-Patent Citations (3)
| Title |
|---|
| 王培章等: "《微波射频技术电路设计与分析》", 31 August 2012 * |
| 王昭等: "Au80Sn20合金焊料制备工艺", 《强激光与粒子束》 * |
| 高宏伟等: "《电子制造装备技术》", 30 September 2015 * |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112259377A (en) * | 2020-09-16 | 2021-01-22 | 大连达利凯普科技股份公司 | Process for solving burr problem after single-layer ceramic capacitor scribing |
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Application publication date: 20191101 |