CN110399094A - Block processing method, device, solid state hard disk and the storage medium of solid state hard disk - Google Patents
Block processing method, device, solid state hard disk and the storage medium of solid state hard disk Download PDFInfo
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- 239000007787 solid Substances 0.000 title claims abstract description 68
- 238000003672 processing method Methods 0.000 title claims abstract description 16
- 239000002356 single layer Substances 0.000 claims abstract description 96
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- 238000004590 computer program Methods 0.000 claims description 13
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Classifications
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- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
- G06F3/06—Digital input from, or digital output to, record carriers, e.g. RAID, emulated record carriers or networked record carriers
- G06F3/0601—Interfaces specially adapted for storage systems
- G06F3/0602—Interfaces specially adapted for storage systems specifically adapted to achieve a particular effect
- G06F3/0614—Improving the reliability of storage systems
- G06F3/0616—Improving the reliability of storage systems in relation to life time, e.g. increasing Mean Time Between Failures [MTBF]
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
- G06F3/06—Digital input from, or digital output to, record carriers, e.g. RAID, emulated record carriers or networked record carriers
- G06F3/0601—Interfaces specially adapted for storage systems
- G06F3/0628—Interfaces specially adapted for storage systems making use of a particular technique
- G06F3/0629—Configuration or reconfiguration of storage systems
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
- G06F3/06—Digital input from, or digital output to, record carriers, e.g. RAID, emulated record carriers or networked record carriers
- G06F3/0601—Interfaces specially adapted for storage systems
- G06F3/0628—Interfaces specially adapted for storage systems making use of a particular technique
- G06F3/0646—Horizontal data movement in storage systems, i.e. moving data in between storage devices or systems
- G06F3/0647—Migration mechanisms
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
- G06F3/06—Digital input from, or digital output to, record carriers, e.g. RAID, emulated record carriers or networked record carriers
- G06F3/0601—Interfaces specially adapted for storage systems
- G06F3/0628—Interfaces specially adapted for storage systems making use of a particular technique
- G06F3/0646—Horizontal data movement in storage systems, i.e. moving data in between storage devices or systems
- G06F3/0652—Erasing, e.g. deleting, data cleaning, moving of data to a wastebasket
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- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
- G06F3/06—Digital input from, or digital output to, record carriers, e.g. RAID, emulated record carriers or networked record carriers
- G06F3/0601—Interfaces specially adapted for storage systems
- G06F3/0668—Interfaces specially adapted for storage systems adopting a particular infrastructure
- G06F3/0671—In-line storage system
- G06F3/0673—Single storage device
- G06F3/0679—Non-volatile semiconductor memory device, e.g. flash memory, one time programmable memory [OTP]
Abstract
This application involves block processing method, device, solid state hard disk and the storage mediums of a kind of solid state hard disk.The described method includes: counting the erasable number of each flash block in multilayered memory unit area, whether the erasable number for judging flash block is more than preset threshold, when being more than, trigger preset pattern switching instruction, execution pattern switching command, the memory module of flash block is switched to single layer memory module, predetermined registration operation is carried out to flash block under single layer memory module.The service life that solid state hard disk can be increased using this method reduces the hardware cost of solid state hard disk.
Description
Technical field
This application involves technical field of data storage, more particularly to a kind of block processing method of solid state hard disk, device, consolidate
State hard disk and storage medium.
Background technique
Solid state hard disk (Solid State Drives, SSD) is made of main control chip and flash memory, and flash memory is divided into NOR flash memory
And nand flash memory, the storage unit in nand flash memory can be divided into single-layer memory cell (Single Level according to type
Cell, SLC) and multilayered memory unit, multilayered memory unit again include MLC, TLC and QLC etc..Compared to multilayered memory unit,
The performance of single-layer memory cell is good, it is erasable often, but single-layer memory cell is higher than multilayered memory unit cost.
Flash block mostly uses greatly multilayered memory unit, and with increasing for hard disk write-in data, the erasable number of flash block will
Reach itself permitted erasable number of maximum, can not continue to use, the active volume inside SSD is caused to gradually decrease.Needle
To above situation, SSD marks off a part of memory space as reserved space on flash memory, when some flash block reaches maximum can
Erasable number and it is unavailable when, by the flash block in reserved space replace not available flash block continue work.However, pre-
Flash block in spacing can be also gradually consumed.In particular, in real time solid-state is written in a large amount of monitoring data by monitoring device
In hard disk, cause the solid state hard disk service life in monitoring device extremely limited.
Summary of the invention
Based on this, it is necessary in view of the above technical problems, provide a kind of solid-state that can be improved solid state hard disk service life
Block processing method, device, solid state hard disk and the storage medium of hard disk.
A kind of block processing method of solid state hard disk, which comprises
Count the erasable number of each flash block in multilayered memory unit area；
Whether the erasable number for judging the flash block is more than preset threshold；
When the erasable number of the flash block is more than the threshold value, preset pattern switching instruction is triggered；
The pattern switching instruction is executed, the memory module of the flash block is switched to single layer memory module；
Predetermined registration operation is carried out to the flash block under the single layer memory module.
It is described by the flash block in one of the embodiments, after the preset pattern switching instruction of the triggering
Memory module the step of being switched to single layer memory module before, the method also includes:
It detects in the flash block with the presence or absence of valid data；
When, there are when valid data, the valid data being migrated to the multilayered memory unit area in the flash block
In other interior flash blocks；
Erasing operation is carried out to the flash block after valid data has been migrated.
Described the step of erasing operation is carried out to the flash block in one of the embodiments, comprising:
The flash block is tentatively wiped with the multilayered memory mode；
It is described to be stored in the single layer after the memory module by the flash block is switched to single layer memory module
Before the step of carrying out predetermined registration operation to the flash block under mode, the method also includes:
The flash block after memory module switching is wiped again with the single layer memory module.
The step for carrying out predetermined registration operation to the flash block under single layer memory module in one of the embodiments,
Suddenly, comprising:
Read operation, write operation and/or erasing operation are carried out to the flash block with single layer memory module.
The step of single layer memory module is switched in the memory module by the flash block in one of the embodiments,
After rapid, before described the step of carrying out predetermined registration operation to the flash block under the single layer memory module, the method is also
Include:
Update the memory module mark of the flash block；
The method also includes:
When detecting that solid state hard disk powers on, the memory module of the flash block and the memory module of the flash block are judged
It identifies whether consistent；
When the memory module of the memory module of the flash block and flash block mark is inconsistent, by the flash block
Memory module be switched to the memory module and identify corresponding memory module.
Described the step of predetermined registration operation is carried out to the flash block under single layer memory module in one of the embodiments,
Later, the method also includes:
When detecting that the predetermined registration operation is completed, the memory module of the flash block and the storage of the flash block are judged
Whether pattern identification is consistent；
When the memory module of the memory module of the flash block and flash block mark is inconsistent, by the flash block
Memory module be switched to the corresponding memory module of memory module mark.
A kind of block processing unit of solid state hard disk, described device include:
Number statistical module, for counting each piece in multilayered memory unit area of erasable number；
Number judgment module, for judging whether the erasable number of the flash block is more than preset threshold；
Instruction triggers module, for triggering preset mode when the erasable number of the flash block is more than the threshold value
Switching command；
Mode switch module is used for execution pattern switching command, the memory module of the flash block is switched to single layer and is deposited
Storage mode；And
Flash block operation module, for carrying out predetermined registration operation to the flash block under the single layer memory module.
A kind of solid state hard disk, the solid state hard disk include main control chip and flash memory, and the main control chip includes processor, institute
Stating flash memory storage has computer program, and the processor performs the steps of when executing the computer program
Count the erasable number of each flash block in multilayered memory unit area；
Whether the erasable number for judging the flash block is more than preset threshold；
When the erasable number of the flash block is more than the threshold value, preset pattern switching instruction is triggered；
The pattern switching instruction is executed, the memory module of the flash block is switched to single layer memory module；
Predetermined registration operation is carried out to the flash block under the single layer memory module.
A kind of solid state hard disk, comprising:
Flash memory, the flash memory include multiple flash blocks, for storing data and are instructed；
Main control chip is attached, for counting each flash memory in multilayered memory unit area by bus with the flash memory
The erasable number of block judges whether the erasable number of the flash block is more than preset threshold, when the erasable number of the flash block
When more than the threshold value, preset pattern switching instruction is triggered, the pattern switching instruction is executed, by the storage of the flash block
Pattern switching is single layer memory module, carries out predetermined registration operation to the flash block under the single layer memory module.
A kind of computer readable storage medium, is stored thereon with computer program, and the computer program is held by processor
It is performed the steps of when row
Count the erasable number of each flash block in multilayered memory unit area；
Whether the erasable number for judging the flash block is more than preset threshold；
When the erasable number of the flash block is more than the threshold value, preset pattern switching instruction is triggered；
The pattern switching instruction is executed, the memory module of the flash block is switched to single layer memory module；
Predetermined registration operation is carried out to the flash block under the single layer memory module.
Block processing method, device, solid state hard disk and the storage medium of above-mentioned solid state hard disk, when in multilayered memory unit area
When the erasable number of flash block is more than preset threshold, mode switching command is triggered, by the memory module of flash block from multilayered memory
Pattern switching is single layer memory module, increases the erasable number of maximum of flash block, and the hardware of no replacement is required flash block, from
And the service life of solid state hard disk is increased, reduce the hardware cost of solid state hard disk.
Detailed description of the invention
Fig. 1 is the flow diagram of the block processing method of solid state hard disk in one embodiment；
Fig. 2 is the flow diagram of the block processing method of solid state hard disk in another embodiment；
Fig. 3 is the structural block diagram of the block processing unit of solid state hard disk in one embodiment；And
Fig. 4 is the structural schematic diagram of solid state hard disk in one embodiment.
Specific embodiment
It is with reference to the accompanying drawings and embodiments, right in order to which the objects, technical solutions and advantages of the application are more clearly understood
The application is further elaborated.It should be appreciated that specific embodiment described herein is only used to explain the application, not
For limiting the application.
In one embodiment, as shown in Figure 1, providing a kind of block processing method of solid state hard disk, this method is applied to
Solid state hard disk, comprising the following steps:
Step 102, the erasable number of each flash block in multilayered memory unit area is counted.
Wherein, the storage unit of each flash block is multilayered memory unit in multilayered memory unit area, and each flash block is deposited
Storage mode is multilayered memory mode.The same time storage of the multilayered memory mode, that is, each storage unit at least data of 2bit, packet
MLC mode, TLC mode and QLC mode etc. are included, for example, each storage unit same time stores the number of 2bit in MLC mode
According to the data of each same time storage 3bit of storage unit in TLC mode.
Single-layer memory cell region also may be present in solid state hard disk, the storage unit of each flash block in single layer storage region
For single-layer memory cell, the memory module of each flash block is single layer memory module.Single layer memory module, that is, each storage unit is same
The data of one time storage 1bit.
Specifically, flash block carries out erasable counting how many times in every progress erasing operation or write operation.In real time or
The erasable number of each flash memory block count in multilayered memory unit area is obtained, periodically to count and monitor multilayered memory unit
The erasable number of each flash block in region.
Step 104, whether the erasable number for judging flash block is more than preset threshold.
Step 106, when the erasable number of flash block is more than the threshold value, preset pattern switching instruction is triggered.
Specifically, increasing with the erasable number of flash block, the service life of flash block continues decaying, when erasable number
When reaching the maximum erasable number of flash block, flash block can not be reused.In order to improve the service life of flash block, set in advance
Preset threshold is set, when the erasable number of flash block is more than preset threshold, mode switching command is triggered, to be more than to erasable number
The flash block of the threshold value carries out memory module switching, otherwise continues the erasable number for counting flash block.Wherein, the tool of preset threshold
Body value and the type of flash memory particle, quality etc. are information-related.
Step 108, the memory module of flash block is switched to single layer memory module by execution pattern switching command.
Specifically, number in multilayered memory unit area, erasable is more than preset threshold by execution pattern switching command
Flash block is single layer memory module from multilayered memory pattern switching.Flash block is that single layer stores mould from multilayered memory pattern switching
After formula, although memory space reduces but erasable number greatly increases, for example, maximum when flash block is using single layer memory module
Erasable number is 30000 times, and the erasable number of maximum will dodge when using multilayered memory mode (such as TLC mode) for 1500 times
For counterfoil from TLC pattern switching to single layer memory module, the capacity of flash block is reduced into original one third, the residue of flash block
Erasable number improves general 20 times, in this way, the total amount of the writable data of flash block improves general 7 times.On the whole, it dodges
The remaining erasable number of counterfoil and writable total amount of data greatly increase, and the service life of flash block is improved, and nothing
Hardware replacement need to be carried out to solid state hard disk, reduce the cost of solid state hard disk.
Step 110, predetermined registration operation is carried out to flash block under single layer memory module.
Specifically, right under single layer memory module by flash block after from multilayered memory pattern switching to multilayer memory module
Flash block carries out read operation, write operation and/or erasing operation.
In the block processing method of above-mentioned solid state hard disk, the erasable number of flash block is more than pre- in multilayered memory unit area
If when threshold value, triggering mode switching command, the memory module of flash block being switched to single layer memory module, in switching memory module
Predetermined registration operation is carried out in flash block afterwards, the erasable number of maximum of flash block greatly increases, the writable number of residue of flash block
According to total amount be also improved, and the hardware of no replacement is required flash block reduces to increase the service life of solid state hard disk
The cost of solid state hard disk.
In another embodiment, as shown in Fig. 2, providing a kind of block processing method of solid state hard disk, this method application
In solid state hard disk, comprising the following steps:
Step 202, the erasable number of each flash block in multilayered memory unit area is counted.
Specifically, flash block carries out erasable counting how many times in every progress erasing operation or write operation.In real time or
The erasable number of each flash memory block count in multilayered memory unit area is obtained, periodically to count and monitor multilayered memory unit
The erasable number of each flash block in region.
Step 204, whether the erasable number for judging flash block is more than preset threshold.
Step 206, when the erasable number of flash block is more than the threshold value, preset pattern switching instruction is triggered.
Specifically, preset threshold is preset, when the erasable number of flash block is more than preset threshold, triggers pattern switching
Instruction carries out memory module switching with the flash block for erasable number being more than the threshold value, otherwise continues to count the erasable of flash block
Number.
Step 208, it detects in flash block and valid data is migrated to multilayer and are deposited when it is present with the presence or absence of valid data
In other flash blocks in storage unit region.
Specifically, it after triggering mode switching command, needs to be implemented the memory module of flash block from multilayered memory mould
Formula is switched to the operation of single layer memory module, original in flash block to store under multilayered memory mode after memory module switching
Data, may there is a phenomenon where data entanglements when reading under single layer memory module.Therefore, before memory module switching,
These valid data are migrated to multilayer memory cell region when it is present with the presence or absence of valid data in detection flash block
Other flash blocks in, while updating the storage index of these valid data, the memory modules of these other flash blocks is multilayer
Memory module, to guarantee that the storage format of valid data and the memory module of the flash block of write-in are consistent.
Step 210, erasing operation is carried out to having migrated the flash block after valid data.
Specifically, after the valid data in flash block migrate out, flash block is wiped using multilayered memory mode
Operation carries out data erasing to flash block by erasing order that is, under multilayered memory mode.
Step 212, the memory module of flash block is switched to single layer memory module by execution pattern switching command.
Specifically, number in multilayered memory unit area, erasable is more than preset threshold by execution pattern switching command
Flash block is single layer memory module from multilayered memory pattern switching.Flash block is that single layer stores mould from multilayered memory pattern switching
After formula, although memory space reduces but erasable number greatly increases, and the total amount of the writable data of flash block is improved, from
And the service life of flash block is improved, and without carrying out hardware replacement to solid state hard disk, reduce the cost of solid state hard disk.
Specifically, it when by the memory module of flash block from multilayered memory pattern switching to single layer memory module, can be used
SET FEATURE order, SLC MODE ENABLE order or A2h order are realized.The different flash block pair of flash memory particle type
The switching command answered is different, for example, the adoptable switching command of flash block that flash memory particle is magnesium light particle is SET FEATURE
Order or SLC MODE ENABLE order, flash memory particle are that the adoptable switching command of flash block of Hynix particle is A2h life
It enables.
Step 214, the flash block after memory module switching is wiped again with single layer memory module.
Specifically, by the memory module of flash block after from multilayered memory pattern switching to single layer memory module, with single layer
Memory module wipes flash block again, i.e., carries out data wiping to flash block by erasing order under single layer memory module
It removes, flash block is carried out again under single layer memory module by carrying out preliminary erasing to flash block under multilayered memory mode
The cooperation of erasing improves the erasing effect of flash block.
Step 216, predetermined registration operation is carried out to the flash block under the single layer memory module.
Specifically, right under single layer memory module by flash block after from multilayered memory pattern switching to single layer memory module
Flash block carries out read operation, write operation and/or erasing operation.
In one embodiment, it is equipped with memory module in flash block to identify, flash block is recorded by memory module mark
Memory module, to solve the problems, such as that flash memory particle itself can not remember the memory module of flash block.For example, depositing when flash block
When storage mode is multilayered memory mode, memory module is identified as 1, when the memory module of flash memory is single layer memory module, storage
Pattern identification is 0.By the memory module of flash block from multilayered memory pattern switching be single layer memory module after, update the flash memory
The memory module of block identifies.
In one embodiment, flash block is after from multilayered memory pattern switching to single layer memory module, when solid state hard disk is sent out
When raw power-off, the memory module that solid state hard disk powers on rear flash block is possible to restore automatically to default storage mode, multilayered memory
The default storage mode of flash block is multilayered memory mode in unit area.Therefore after detecting that solid state hard disk powers on, judgement
The memory module of flash block and the memory module of flash block indicate whether unanimously in multilayered memory unit area, if inconsistent,
The memory module of flash block is switched to memory module and identifies corresponding memory module, so that the memory module in flash block is unexpected
Pattern switching is carried out to flash block in time when recovery to multilayer memory module, is avoided under multilayered memory mode to flash block in list
The data stored under layer memory module are operated, and the effect of flash block pattern switching is improved.Since the data of flash block are disconnected
It is stored under single layer memory module before electric, without carrying out data erasing to flash block before and after pattern switching at this time.
In one embodiment, read operation, write operation and/or wiping are carried out in the flash block for switching to single layer memory module
After operation, flash block is possible to automatically switch to default storage mode (i.e. multilayered memory mode) from single layer memory module, because
This judges the memory module of flash block and the memory module mark of flash block when detecting that the predetermined registration operation in flash block is completed
Whether knowledge is consistent, when there is inconsistency, the memory module of flash block is switched to and is deposited corresponding to the memory module mark of flash block
Storage mode is cut to carry out mode to flash block in time when the memory module of flash block is restored suddenly to multilayer memory module
It changes, the data stored under single layer memory module under multilayered memory mode to flash block is avoided to operate, improve flash block
The effect of pattern switching.
It should be understood that although each step in the flow chart of Fig. 1-2 is successively shown according to the instruction of arrow,
These steps are not that the inevitable sequence according to arrow instruction successively executes.Unless expressly stating otherwise herein, these steps
Execution there is no stringent sequences to limit, these steps can execute in other order.Moreover, at least one in Fig. 1-2
Part steps may include that perhaps these sub-steps of multiple stages or stage are not necessarily in synchronization to multiple sub-steps
Completion is executed, but can be executed at different times, the execution sequence in these sub-steps or stage is also not necessarily successively
It carries out, but can be at least part of the sub-step or stage of other steps or other steps in turn or alternately
It executes.
In one embodiment, as shown in figure 3, providing a kind of block processing unit 300 of solid state hard disk, comprising: number
Statistical module 302, number judgment module 304, instruction triggers module 306, mode switch module 308 and flash block operation module
310, in which:
Number statistical module 302, for counting each piece in multilayered memory unit area of erasable number.
Number judgment module 304, for judging whether the erasable number of flash block is more than preset threshold.
Instruction triggers module 306, for triggering preset pattern switching when the erasable number of flash block is more than the threshold value
Instruction.
Mode switch module 308 is used for execution pattern switching command, and the memory module of flash block is switched to single layer storage
Mode.
Flash block operation module 310, for carrying out predetermined registration operation to flash block under single layer memory module.
Specifically, number statistical module 302, number judgment module 304, instruction triggers module 306, mode switch module
308 and flash block operation module 310 specific implementation content can refer to step 102 in the block processing method of above-mentioned solid state hard disk~
Step 110 or step 202~step 214 detailed description, details are not described herein.
In one embodiment, the block processing unit 300 of solid state hard disk further include:
Valid data detection module, for detecting in flash block with the presence or absence of valid data；
Data Migration module, for when, there are when valid data, valid data being migrated to multilayered memory list in flash block
In other memory blocks in first region；And
Flash block wipes module, for carrying out erasing operation to having migrated the flash block after valid data.
Specifically, it after triggering mode switching command, needs to be implemented the memory module of flash block from multilayered memory mode
It is switched to the operation of single layer memory module, after memory module switching, original number stored under multilayered memory mode in flash block
According to may there is a phenomenon where data entanglements when being read under single layer memory module.Therefore, before memory module switching, inspection
It surveys in flash block and when it is present migrates these valid data to multilayer memory cell region with the presence or absence of valid data
In other flash blocks, while the storage index of these valid data is updated, the memory module of these other flash blocks is deposited for multilayer
Storage mode, to guarantee that the storage format of valid data and the memory module of the flash block of write-in are consistent.Having in flash block
After effect Data Migration is gone out, data erasing is carried out to flash block, to improve the pattern switching effect of subsequent flash block.
In one embodiment, flash block erasing module includes:
Preliminary erasing module, for tentatively being wiped with multilayered memory mode flash block.
Specifically, flash block carry out pattern switching before be multilayered memory mode, with multilayered memory mode to flash block into
The preliminary erasing of row, i.e., carry out data erasing to flash block under multilayered memory mode, effectively to remove the data in flash block.
In one embodiment, the block processing unit 300 of solid state hard disk further include:
Module is wiped again, for being wiped again with single layer memory module the flash block after memory module switching.
Specifically, by the memory module of flash block after from multilayered memory pattern switching to single layer memory module, with single layer
Memory module wipes flash block again, i.e., carries out data wiping to flash block by erasing order under single layer memory module
It removes, flash block is carried out again under single layer memory module by carrying out preliminary erasing to flash block under multilayered memory mode
The cooperation of erasing improves the erasing effect of flash block.
In one embodiment, the block processing unit 300 of solid state hard disk further include:
Pattern identification update module, the memory module for updating flash block identify；
First mode judgment module, for when detecting that solid state hard disk powers on, judging the memory module and sudden strain of a muscle of flash block
The memory module of counterfoil identifies whether unanimously；
First mode identifies unified modules, and the memory module for the memory module and flash block of working as flash block identifies different
When cause, the memory module of flash block is switched to memory module and identifies corresponding memory module.
Specifically, it is equipped with memory module in flash block to identify, the storage mould of flash block is recorded by memory module mark
Formula, to solve the problems, such as that flash memory particle itself can not remember the memory module of flash block.By the memory module of flash block from more
After layer memory module is switched to single layer memory module, the memory module mark of the flash block is updated.
Specifically, flash block is after from multilayered memory pattern switching to single layer memory module, when solid state hard disk powers off,
The memory module that solid state hard disk powers on rear flash block is possible to restore automatically to default storage mode, in multilayered memory unit area
The default storage mode of flash block is multilayered memory mode.Therefore after detecting that solid state hard disk powers on, judge multilayered memory list
The memory module of flash block and the memory module of flash block indicate whether unanimously in first region, if inconsistent, by flash block
Memory module is switched to memory module and identifies corresponding memory module, so that the memory module in flash block is restored suddenly to multilayer
Pattern switching is carried out to flash block in time when memory module, is avoided under multilayered memory mode to flash block in single layer memory module
The data of lower storage are operated, and the effect of flash block pattern switching is improved.In single layer before being powered off due to the data of flash block
It is stored under memory module, without carrying out data erasing to flash block before and after pattern switching at this time.
In one embodiment, the block processing unit 300 of solid state hard disk further include:
Second mode judgment module, for judging the memory module and sudden strain of a muscle of flash block when detecting that predetermined registration operation is completed
The memory module of counterfoil identifies whether unanimously；
Second mode identifies unified modules, and the memory module for the memory module and flash block of working as flash block identifies different
When cause, the memory module of flash block is switched to the corresponding memory module of memory module mark.
Specifically, read operation, write operation and/or erasing operation are carried out in the flash block for switching to single layer memory module
Afterwards, therefore flash block, which is possible to automatically switch to default storage mode (i.e. multilayered memory mode) from single layer memory module, is examining
When measuring the predetermined registration operation completion in flash block, the memory module of the memory module and flash block that judge flash block identifies whether one
It causes, when there is inconsistency, the corresponding memory module of the memory module mark that the memory module of flash block is switched into flash block, from
And pattern switching is carried out to flash block in time when the memory module of flash block is restored suddenly to multilayer memory module, it avoids more
The data stored under single layer memory module under layer memory module to flash block operate, and improve the effect of flash block pattern switching
Fruit.
The specific of block processing unit about solid state hard disk limits the block processing that may refer to above for solid state hard disk
The restriction of method, details are not described herein.Modules in the block processing unit of above-mentioned solid state hard disk can be fully or partially through
Software, hardware and combinations thereof are realized.Above-mentioned each module can be embedded in the form of hardware or independently of the place in computer equipment
It manages in device, can also be stored in a software form in the memory in computer equipment, in order to which processor calls execution or more
The corresponding operation of modules.
In one embodiment, as shown in figure 4, providing a kind of solid state hard disk 400, including main control chip 402 and flash memory
404, main control chip 402 includes processor 406, and flash memory 404 is stored with computer program, which executes the computer
The step of a kind of block processing method of the solid state hard disk provided in the various embodiments described above is provided when program.
In one embodiment, a kind of solid state hard disk is provided, comprising:
Flash memory, including multiple flash blocks for storing data and instruct；
Main control chip is attached with flash memory by bus, for counting each flash block in multilayered memory unit area
Erasable number judges whether the erasable number of flash block is more than preset threshold, when being more than, triggers preset pattern switching and refers to
It enables, the memory module of flash block is switched to single layer memory module, to sudden strain of a muscle under single layer memory module by execution pattern switching command
Counterfoil carries out predetermined registration operation.
Wherein, a part of memory space has been reserved in flash memory in advance for storing the instruction of solid state hard disk, at runtime by
Processor in main control chip reads and executes these instructions.
In one embodiment, after triggering mode switching command, the memory module of flash block is switched to single layer storage mould
Before formula, main control chip is also used to detect in flash block with the presence or absence of valid data, when it is present, at most by valid data migration
In other flash blocks in layer memory cell region, erasing operation is carried out to the flash block after valid data has been migrated, to avoid
Because the memory module of legacy data storage format and flash block is inconsistent, there is a situation where data read errors after pattern switching.
In one embodiment, when carrying out erasing operation to flash block, main control chip is with multilayered memory mode to flash memory
Block is tentatively wiped, and the flash block tentatively wiped is switched to single layer memory module, is stored with multilayered memory mode to switching
Flash block after mode is wiped again, thus by carrying out preliminary erasing to flash block under multilayered memory mode and in list
The cooperation wiped again under layer memory module flash block, improves the erasing effect of flash block.
In one embodiment, it is equipped with memory module in flash block to identify, sudden strain of a muscle can not be remembered to solve flash memory particle itself
The problem of memory module of counterfoil.By the memory module of flash block from multilayered memory pattern switching be single layer memory module after,
Main control chip updates the memory module mark of the flash block, and the memory module of flash block is recorded by memory module mark, real
It is existing storage pattern identification and memory module it is consistent.
In one embodiment, main control chip is when detecting that solid state hard disk powers on, judge the memory module of flash block with
The memory module of flash block identifies whether unanimously, if inconsistent, the memory module of flash block is switched to memory module mark pair
The memory module answered, to carry out mould to flash block in time when the memory module of flash block is restored suddenly to multilayer memory module
Formula switching, avoids the data stored under single layer memory module under multilayered memory mode to flash block from operating, and improves and dodges
The effect of counterfoil pattern switching.
In one embodiment, main control chip judges flash block when detecting that the predetermined registration operation in flash block is completed
The memory module of memory module and flash block identifies whether unanimously, if inconsistent, the memory module of flash block is switched to storage
The corresponding memory module of pattern identification, thus when the memory module of flash block is restored suddenly to multilayer memory module in time to sudden strain of a muscle
Counterfoil carries out pattern switching, and the data stored under single layer memory module under multilayered memory mode to flash block is avoided to grasp
Make, improves the effect of flash block pattern switching.
In one embodiment, a kind of computer readable storage medium is provided, computer program is stored thereon with, is calculated
The step of a kind of block processing method of the solid state hard disk provided in the various embodiments described above is provided when machine program is executed by processor.
Those of ordinary skill in the art will appreciate that realizing all or part of the process in above-described embodiment method, being can be with
Relevant hardware is instructed to complete by computer program, the computer program can be stored in a non-volatile computer
In read/write memory medium, the computer program is when being executed, it may include such as the process of the embodiment of above-mentioned each method.Wherein,
To any reference of memory, storage, database or other media used in each embodiment provided herein,
Including non-volatile and/or volatile memory.Nonvolatile memory may include read-only memory (ROM), programming ROM
(PROM), electrically programmable ROM (EPROM), electrically erasable ROM (EEPROM) or flash memory.Volatile memory may include
Random access memory (RAM) or external cache.By way of illustration and not limitation, RAM is available in many forms,
Such as static state RAM (SRAM), dynamic ram (DRAM), synchronous dram (SDRAM), double data rate sdram (DDRSDRAM), enhancing
Type SDRAM (ESDRAM), synchronization link (Synchlink) DRAM (SLDRAM), memory bus (Rambus) direct RAM
(RDRAM), direct memory bus dynamic ram (DRDRAM) and memory bus dynamic ram (RDRAM) etc..
Each technical characteristic of above embodiments can be combined arbitrarily, for simplicity of description, not to above-described embodiment
In each technical characteristic it is all possible combination be all described, as long as however, the combination of these technical characteristics be not present lance
Shield all should be considered as described in this specification.
The several embodiments of the application above described embodiment only expresses, the description thereof is more specific and detailed, but simultaneously
It cannot therefore be construed as limiting the scope of the patent.It should be pointed out that coming for those of ordinary skill in the art
It says, without departing from the concept of this application, various modifications and improvements can be made, these belong to the protection of the application
Range.Therefore, the scope of protection shall be subject to the appended claims for the application patent.
Claims (10)
1. a kind of block processing method of solid state hard disk, which is characterized in that the described method includes:
Count the erasable number of each flash block in multilayered memory unit area；
Whether the erasable number for judging the flash block is more than preset threshold；
When the erasable number of the flash block is more than the threshold value, preset pattern switching instruction is triggered；
The pattern switching instruction is executed, the memory module of the flash block is switched to single layer memory module；
Predetermined registration operation is carried out to the flash block under the single layer memory module.
2. the method according to claim 1, wherein after the triggering preset pattern switching instruction, institute
Before stating the step of memory module of the flash block is switched to single layer memory module, the method also includes:
It detects in the flash block with the presence or absence of valid data；
When, there are when valid data, the valid data being migrated to the multilayered memory unit area in the flash block
In other flash blocks；
Erasing operation is carried out to the flash block after valid data has been migrated.
3. method according to claim 2, which is characterized in that described the step of carrying out erasing operation to the flash block, packet
It includes:
The flash block is tentatively wiped with the multilayered memory mode；
It is described in the single layer memory module after the memory module by the flash block is switched to single layer memory module
Under to the flash block carry out predetermined registration operation the step of before, the method also includes:
The flash block after memory module switching is wiped again with the single layer memory module.
4. the method according to claim 1, wherein described carry out the flash block under single layer memory module
The step of predetermined registration operation, comprising:
Read operation, write operation and/or erasing operation are carried out to the flash block with single layer memory module.
5. the method according to claim 1, wherein being switched to list in the memory module by the flash block
After layer memory module, before described the step of carrying out predetermined registration operation to the flash block under the single layer memory module, institute
State method further include:
Update the memory module mark of the flash block；
The method also includes:
When detecting that solid state hard disk powers on, the memory module of the memory module and the flash block that judge the flash block is identified
It is whether consistent；
When the memory module of the memory module of the flash block and flash block mark is inconsistent, by depositing for the flash block
Storing up pattern switching is that the memory module identifies corresponding memory module.
6. according to the method described in claim 5, it is characterized in that, described carry out the flash block under single layer memory module
After the step of predetermined registration operation, the method also includes:
When detecting that the predetermined registration operation is completed, the memory module of the flash block and the memory module of the flash block are judged
It identifies whether consistent；
When the memory module of the memory module of the flash block and flash block mark is inconsistent, by depositing for the flash block
Storing up pattern switching is the corresponding memory module of memory module mark.
7. a kind of block processing unit of solid state hard disk, which is characterized in that described device includes:
Number statistical module, for counting each piece in multilayered memory unit area of erasable number；
Number judgment module, for judging whether the erasable number of the flash block is more than preset threshold；
Instruction triggers module, for triggering preset pattern switching when the erasable number of the flash block is more than the threshold value
Instruction；
Mode switch module is used for execution pattern switching command, and the memory module of the flash block is switched to single layer storage mould
Formula；And
Flash block operation module, for carrying out predetermined registration operation to the flash block under the single layer memory module.
8. a kind of solid state hard disk, the solid state hard disk includes main control chip and flash memory, and the main control chip includes processor, described
Flash memory storage has computer program, which is characterized in that the processor realized when executing the computer program claim 1 to
The step of any one of 6 the method.
9. a kind of solid state hard disk characterized by comprising
Flash memory, the flash memory include multiple flash blocks, for storing data and are instructed；
Main control chip is attached, for counting each flash block in multilayered memory unit area by bus with the flash memory
Erasable number judges whether the erasable number of the flash block is more than preset threshold, when the erasable number of the flash block is more than
When the threshold value, preset pattern switching instruction is triggered, the pattern switching instruction is executed, by the memory module of the flash block
It is switched to single layer memory module, predetermined registration operation is carried out to the flash block under the single layer memory module.
10. a kind of computer readable storage medium, is stored thereon with computer program, which is characterized in that the computer program
The step of method described in any one of claims 1 to 6 is realized when being executed by processor.
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| CN201910492020.8A CN110399094A (en) | 2019-06-06 | 2019-06-06 | Block processing method, device, solid state hard disk and the storage medium of solid state hard disk |
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