CN113707206B - Data protection method and device of FLASH memory, electronic equipment and storage medium - Google Patents
Data protection method and device of FLASH memory, electronic equipment and storage medium Download PDFInfo
- Publication number
- CN113707206B CN113707206B CN202110533052.5A CN202110533052A CN113707206B CN 113707206 B CN113707206 B CN 113707206B CN 202110533052 A CN202110533052 A CN 202110533052A CN 113707206 B CN113707206 B CN 113707206B
- Authority
- CN
- China
- Prior art keywords
- data
- flash memory
- erasing
- abrasion
- wear
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000000034 method Methods 0.000 title claims abstract description 22
- 238000005299 abrasion Methods 0.000 claims abstract description 59
- 230000006870 function Effects 0.000 claims abstract description 48
- 238000012360 testing method Methods 0.000 claims abstract description 45
- 125000004122 cyclic group Chemical group 0.000 claims abstract description 26
- 238000013500 data storage Methods 0.000 claims description 12
- 238000004590 computer program Methods 0.000 claims description 10
- 238000012546 transfer Methods 0.000 claims description 10
- 238000011156 evaluation Methods 0.000 claims description 9
- 238000010586 diagram Methods 0.000 description 6
- 230000009286 beneficial effect Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000002035 prolonged effect Effects 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005389 magnetism Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
- G11C16/349—Arrangements for evaluating degradation, retention or wearout, e.g. by counting erase cycles
- G11C16/3495—Circuits or methods to detect or delay wearout of nonvolatile EPROM or EEPROM memory devices, e.g. by counting numbers of erase or reprogram cycles, by using multiple memory areas serially or cyclically
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
- G11C16/3436—Arrangements for verifying correct programming or erasure
- G11C16/3468—Prevention of overerasure or overprogramming, e.g. by verifying whilst erasing or writing
Abstract
The invention provides a data protection method of a FLASH memory, wherein the FLASH memory comprises a plurality of FLASH memory units, and the method comprises the following steps: performing a cyclic erasing test on each FLASH memory unit, and recording the erasing times and the duration of each erasing time; establishing a data abrasion function of each FLASH storage unit according to the cyclic erasing test result; respectively establishing a data abrasion lookup table according to each data abrasion function, and storing each data abrasion lookup table into a corresponding FLASH storage unit; and recording the erasing times when each FLASH memory unit is erased, comparing and evaluating the data wear degree with the data wear lookup table of the FLASH memory unit, and transferring the data from the FLASH memory unit with high wear to the FLASH memory unit with low wear. According to the invention, the abrasion degree of the FLASH storage unit is estimated, so that the data is transferred to the FLASH storage unit with low abrasion in advance, and the safety of the data is ensured.
Description
Technical Field
The present invention relates to the field of storage technologies, and in particular, to a method and apparatus for protecting data in a FLASH memory, an electronic device, and a storage medium.
Background
The development of computers has been accompanied by continuous updating of storage technologies, which play an increasingly important role and gradually become a bottleneck restricting the overall performance of the computer. In particular to the times of the rising of big data and cloud storage, the performance requirements of the system on the memory are higher and higher. FLASH is outstanding as the memory, has the advantages of low production and manufacturing cost, shock resistance, magnetism resistance, nonvolatile data and the like.
In the system-level application, a FLASH chip is generally adopted to form a medium for storing data of the main control chip. When the abrasion times of the FLASH memory cells reach the service life, the situation of data loss can occur. This can lead to errors in the chip read data after the FLASH chip is powered up again.
Currently, the abrasion degree of a chip storage unit is mainly estimated in a board-level system according to a linear region, but an estimation result often does not accord with the actual situation, and data cannot be well protected.
Disclosure of Invention
Aiming at the defects of the prior art, the invention provides a data protection method, a device, electronic equipment and a storage medium of a FLASH memory, and aims to solve the problem that the wear degree of a FLASH memory unit cannot be accurately estimated to cause the loss of stored data.
In order to solve the technical problems, the invention adopts the following technical scheme:
in a first aspect, a data protection method of a FLASH memory is provided, where the FLASH memory includes a plurality of FLASH memory units, and the method includes:
performing a cyclic erasing test on each FLASH memory unit, and recording the erasing times and the duration of each erasing time;
establishing a data abrasion function of each FLASH storage unit according to the cyclic erasing test result;
respectively establishing a data abrasion lookup table according to each data abrasion function, and storing each data abrasion lookup table into a corresponding FLASH storage unit;
and recording the erasing times when each FLASH memory unit is erased, comparing and evaluating the data wear degree with the data wear lookup table of the FLASH memory unit, and transferring the data from the FLASH memory unit with high wear to the FLASH memory unit with low wear.
The method for performing the cyclic erasing test on each FLASH memory unit and recording the erasing times and the erasing time length of each time specifically comprises the following steps:
and selecting a plurality of sectors of the FLASH memory units as erasure test areas, respectively performing cyclic erasure test on the erasure test areas of the FLASH memory units, and recording the erasure times and the erasure time of each time.
The data wear function of each FLASH memory cell is as follows:
P(t)＝EXP(-Ct)(0<t<T1)；
P(t)＝EXP(-Ct 2 )(T1<t<T2)；
wherein P is the total erasing time, T is the erasing times, T1 is the turning point of the function curve from the linear change region to the nonlinear change region, and T2 is one point of the function curve in the nonlinear change region.
The step of recording the erasing times when each FLASH memory unit is erased, and comparing the erasing times with the data abrasion lookup table of the FLASH memory unit to evaluate the data abrasion degree, and the step of transferring the data from the FLASH memory unit with high abrasion to the FLASH memory unit with low abrasion specifically comprises the following steps:
and when the DATA storage areas of the FLASH storage units are erased, the erasing times are respectively recorded, the DATA wear degree of the DATA storage areas is compared and evaluated by the DATA wear lookup tables corresponding to the FLASH storage units, and the DATA of the FLASH storage units in the nonlinear change area are transferred to the FLASH storage units in the linear change area.
In a second aspect, a data protection device of a FLASH memory is provided, where the FLASH memory includes a plurality of FLASH memory units, and the device includes:
the erasing test module is used for carrying out cyclic erasing test on each FLASH storage unit and recording the erasing times and the duration of each erasing time;
the abrasion function module is used for establishing a data abrasion function of each FLASH storage unit according to the cyclic erasing test result;
the abrasion table module is used for respectively establishing data abrasion lookup tables according to the data abrasion functions and storing the data abrasion lookup tables into corresponding FLASH storage units;
and the evaluation and transfer module is used for recording the erasing times when each FLASH storage unit is erased, comparing the erasing times with the data abrasion lookup table of the evaluation and transfer module, and transferring the data from the FLASH storage unit with high abrasion to the FLASH storage unit with low abrasion.
The erasing test module is specifically configured to:
and selecting a plurality of sectors of the FLASH memory units as erasure test areas, respectively performing cyclic erasure test on the erasure test areas of the FLASH memory units, and recording the erasure times and the erasure time of each time.
The data wear function of each FLASH memory cell is as follows:
P(t)＝EXP(-Ct)(0<t<T1)；
P(t)＝EXP(-Ct 2 )(T1<t<T2)；
wherein P is the total erasing time, T is the erasing times, T1 is the turning point of the function curve from the linear change region to the nonlinear change region, and T2 is one point of the function curve in the nonlinear change region.
Wherein, the evaluation and transfer module is specifically configured to:
and when the DATA storage areas of the FLASH storage units are erased, the erasing times are respectively recorded, the DATA wear degree of the DATA storage areas is compared and evaluated by the DATA wear lookup tables corresponding to the FLASH storage units, and the DATA of the FLASH storage units in the nonlinear change area are transferred to the FLASH storage units in the linear change area.
In a third aspect, an electronic device is provided, comprising: a memory, a processor and a computer program stored on the memory and executable on the processor, the processor implementing the steps of the method according to any one of the first aspects when the computer program is executed.
In a fourth aspect, there is provided a computer readable storage medium having stored thereon a computer program which, when executed by a processor, implements the steps of the method according to any of the first aspects.
The invention has the beneficial effects that:
according to the invention, the cyclic erasing test is carried out on each FLASH storage unit, the erasing times and the erasing time length of each time are recorded, the data abrasion function of each FLASH storage unit is established according to the cyclic erasing test result, the data abrasion lookup tables are respectively established according to each data abrasion function, each data abrasion lookup table is stored in the corresponding FLASH storage unit, the erasing times are recorded when each FLASH storage unit is erased, the data abrasion degree is compared with the data abrasion lookup tables of the FLASH storage units, the service lives of the FLASH storage units can be estimated in advance, and the data is transferred from the FLASH storage units with high abrasion to the FLASH storage units with low abrasion, so that the safety of the data is ensured, the loss of each FLASH storage unit is balanced, and the service life is prolonged.
Drawings
The following details the specific construction of the present invention with reference to the accompanying drawings
Fig. 1 is a flow chart of a data protection method of a FLASH memory according to an embodiment of the present invention;
FIG. 2 is a data wear function diagram of a FLASH memory cell according to an embodiment of the present invention;
fig. 3 is a module connection diagram of a data protection device of a FLASH memory according to an embodiment of the present invention;
fig. 4 is a schematic structural diagram of an electronic device according to an embodiment of the present invention.
Detailed Description
In order to describe the technical content, the constructional features, the achieved objects and effects of the present invention in detail, the following description is made in connection with the embodiments and the accompanying drawings.
Embodiments of the present invention are described in detail below, examples of which are illustrated in the accompanying drawings, wherein like or similar reference numerals refer to like or similar elements or elements having like or similar functions throughout. The embodiments described below by referring to the drawings are illustrative and intended to explain the present invention and should not be construed as limiting the invention.
Referring to fig. 1, fig. 1 is a flow chart of a data protection method of a FLASH memory according to an embodiment of the invention. As shown in fig. 1, a data protection method of a FLASH memory, where the FLASH memory includes a plurality of FLASH memory units, includes:
step S101, performing a cyclic erasing test on each FLASH memory cell, and recording the erasing times and the erasing time duration of each time.
Step S102, a data abrasion function of each FLASH storage unit is established according to the cyclic erasing test result.
Specifically, the erasing times are taken as the abscissa, and the sum of the duration of each erasing, namely the total duration of the erasing, is taken as the ordinate to carry out fitting to establish a data abrasion function.
Step S103, respectively establishing a data abrasion lookup table according to each data abrasion function, and storing each data abrasion lookup table into a corresponding FLASH storage unit.
Specifically, the data wear lookup table is a set of points with natural numbers on the abscissa of the corresponding data wear function, and the total erasing time length corresponding to the erasing times can be quickly checked by reading the data wear lookup table, so that the data wear degree of the FLASH memory cell is evaluated.
And step S104, when each FLASH memory unit is erased, the erasing times are recorded, and the data wear degree is compared with the data wear lookup table of the FLASH memory unit, so that the data is transferred from the FLASH memory unit with high wear to the FLASH memory unit with low wear.
The invention has the beneficial effects that:
according to the invention, the cyclic erasing test is carried out on each FLASH storage unit, the erasing times and the erasing time length of each time are recorded, the data abrasion function of each FLASH storage unit is established according to the cyclic erasing test result, the data abrasion lookup tables are respectively established according to each data abrasion function, each data abrasion lookup table is stored in the corresponding FLASH storage unit, the erasing times are recorded when each FLASH storage unit is erased, the data abrasion degree is compared with the data abrasion lookup tables of the FLASH storage units, the service lives of the FLASH storage units can be estimated in advance, and the data is transferred from the FLASH storage units with high abrasion to the FLASH storage units with low abrasion, so that the safety of the data is ensured, the loss of each FLASH storage unit is balanced, and the service life is prolonged.
Further, the step S101 specifically includes:
step S1011, selecting a plurality of sectors of the FLASH memory cells as erasure test areas, respectively performing cyclic erasure test on the erasure test areas of the FLASH memory cells, and recording the erasure times and the erasure time duration of each time.
Specifically, the FLASH memory unit includes a BOOT memory area, a DATA memory area, an erase test area, and a DATA wear lookup table area.
Further, referring to fig. 2, fig. 2 is a data wear function diagram of a FLASH memory unit according to an embodiment of the present invention. As shown in fig. 2, the data wear function of each FLASH memory cell is:
P(t)＝EXP(-Ct)(0<t<T1)；
P(t)＝EXP(-Ct 2 )(T1<t<T2)；
wherein P is the total erasing time, T is the erasing times, T1 is the turning point of the function curve from the linear change region to the nonlinear change region, and T2 is one point of the function curve in the nonlinear change region. In fig. 2, the actual intersection point of the function t=t2 and the data wear function is P2, and P1 is the intersection point of the function t=t2 and the wear function estimated according to the linear change in the industry. The performance degradation change of the FLASH memory unit in the nonlinear change area is aggravated, the data erasing time is gradually increased, and the service life of the FLASH memory unit is greatly shortened.
Further, the step S104 specifically includes:
in step S1041, when erasing the DATA storage area of each FLASH storage unit, the erasing times are recorded, and the DATA wear lookup table corresponding to each FLASH storage unit is used for comparing and evaluating the DATA wear degree of the DATA storage area, so as to transfer the DATA of the FLASH storage unit in the nonlinear variation area to the FLASH storage unit in the linear variation area.
Referring to fig. 3, fig. 3 is a schematic diagram illustrating a data protection device of a FLASH memory according to an embodiment of the present invention. As shown in fig. 3, a data protection device of a FLASH memory, where the FLASH memory includes a plurality of FLASH memory units, the device includes:
the erasing test module 10 is used for performing a cyclic erasing test on each FLASH memory unit, and recording the erasing times and the erasing time duration of each time.
And the wear function module 20 is used for establishing a data wear function of each FLASH memory cell according to the cyclic erasing test result.
The wear table module 30 is configured to establish a data wear lookup table according to each data wear function, and store each data wear lookup table in a corresponding FLASH memory unit.
The evaluation and transfer module 40 is used for recording the erasing times when each FLASH memory cell is erased, comparing the data wear degree with the data wear lookup table of the evaluation and transfer module, and transferring the data from the FLASH memory cell with high wear to the FLASH memory cell with low wear.
Further, the erasing test module 10 is specifically configured to:
and selecting a plurality of sectors of the FLASH memory units as erasure test areas, respectively performing cyclic erasure test on the erasure test areas of the FLASH memory units, and recording the erasure times and the erasure time of each time.
Further, the data wear function of each FLASH memory cell is:
P(t)＝EXP(-Ct)(0<t<T1)；
P(t)＝EXP(-Ct 2 )(T1<t<T2)；
wherein P is the total erasing time, T is the erasing times, T1 is the turning point of the function curve from the linear change region to the nonlinear change region, and T2 is one point of the function curve in the nonlinear change region.
Further, the evaluation and transfer module 40 is specifically configured to:
and when the DATA storage areas of the FLASH storage units are erased, the erasing times are respectively recorded, the DATA wear degree of the DATA storage areas is compared and evaluated by the DATA wear lookup tables corresponding to the FLASH storage units, and the DATA of the FLASH storage units in the nonlinear change area are transferred to the FLASH storage units in the linear change area.
Referring to fig. 4, fig. 4 is a schematic structural diagram of an electronic device according to an embodiment of the present invention. As shown in fig. 4, an electronic device includes:
memory 301, processor 302, bus 303, and a computer program stored on memory 301 and executable on processor 302, memory 301 and processor 302 being connected by bus 303. When the processor 302 executes the computer program, the data protection method of the FLASH memory in the foregoing embodiment is implemented. Wherein the number of processors may be one or more.
The memory 301 may be a high-speed random access memory (RAM, random Access Memory) memory or a non-volatile memory (non-volatile memory), such as a disk memory. The memory 301 is used for storing executable program code, and the processor 302 is coupled to the memory 301.
Further, the present invention also provides a computer readable storage medium, which may be a data protection device provided in the FLASH memory in each of the above embodiments, and the computer readable storage medium may be a memory in the embodiment shown in fig. 4.
The computer readable storage medium stores a computer program which, when executed by a processor, implements the data protection method of the FLASH memory in the foregoing embodiment. Further, the computer-readable medium may be any medium capable of storing a program code, such as a usb (universal serial bus), a removable hard disk, a Read-Only Memory (ROM), a RAM, a magnetic disk, or an optical disk.
The foregoing description is only illustrative of the present invention and is not intended to limit the scope of the invention, and all equivalent structures or equivalent processes or direct or indirect application in other related technical fields are included in the scope of the present invention.
Claims (8)
1. The data protection method of the FLASH memory comprises a plurality of FLASH storage units, and is characterized by comprising the following steps:
performing a cyclic erasing test on each FLASH memory unit, and recording the erasing times and the duration of each erasing time;
establishing a data abrasion function of each FLASH storage unit according to the cyclic erasing test result; the data wear function is:
P(t)=EXP(-Ct)(0<t<T1)；
P(t)=EXP(-Ct 2 )(T1<t<T2)；
wherein P is the total erasing time, T is the erasing times, T1 is the turning point of the function curve from the linear change region to the nonlinear change region, and T2 is one point of the function curve in the nonlinear change region;
respectively establishing a data abrasion lookup table according to each data abrasion function, and storing each data abrasion lookup table into a corresponding FLASH storage unit;
recording the erasing times when each FLASH memory unit is erased, comparing and evaluating the data wear degree with the data wear lookup table of the FLASH memory unit, and transferring the data from the FLASH memory unit with high wear to the FLASH memory unit with low wear; wherein high wear corresponds to a non-linear change region and low wear corresponds to a linear change region.
2. The method for protecting data of FLASH memory according to claim 1, wherein the performing a cyclic erasing test on each FLASH memory cell and recording the number of erasing times and the duration of each erasing specifically comprises:
and selecting a plurality of sectors of the FLASH memory units as erasure test areas, respectively performing cyclic erasure test on the erasure test areas of the FLASH memory units, and recording the erasure times and the erasure time of each time.
3. The method for protecting data of FLASH memory according to claim 1, wherein,
the step of recording the erasing times when each FLASH memory unit is erased, and comparing the data wear degree with the data wear lookup table of the FLASH memory unit to evaluate the data wear degree, and the step of transferring the data from the FLASH memory unit with high wear to the FLASH memory unit with low wear specifically comprises the following steps:
and when the DATA storage areas of the FLASH storage units are erased, the erasing times are respectively recorded, the DATA wear degree of the DATA storage areas is compared and evaluated by the DATA wear lookup tables corresponding to the FLASH storage units, and the DATA of the FLASH storage units in the nonlinear change area are transferred to the FLASH storage units in the linear change area.
4. A data protection device for a FLASH memory, the FLASH memory comprising a plurality of FLASH memory cells, the data protection device comprising:
the erasing test module is used for carrying out cyclic erasing test on each FLASH storage unit and recording the erasing times and the duration of each erasing time;
the abrasion function module is used for establishing a data abrasion function of each FLASH storage unit according to the cyclic erasing test result; the data wear function is:
P(t)=EXP(-Ct)(0<t<T1)；
P(t)=EXP(-Ct 2 )(T1<t<T2)；
wherein P is the total erasing time, T is the erasing times, T1 is the turning point of the function curve from the linear change region to the nonlinear change region, and T2 is one point of the function curve in the nonlinear change region;
the abrasion table module is used for respectively establishing data abrasion lookup tables according to the data abrasion functions and storing the data abrasion lookup tables into corresponding FLASH storage units;
the evaluation and transfer module is used for recording the erasing times when each FLASH memory unit is erased, comparing the erasing times with the data abrasion lookup table of the evaluation and transfer module, and transferring the data from the FLASH memory unit with high abrasion to the FLASH memory unit with low abrasion; wherein high wear corresponds to a non-linear change region and low wear corresponds to a linear change region.
5. The data protection device of the FLASH memory according to claim 4, wherein the erasure testing module is specifically configured to:
and selecting a plurality of sectors of the FLASH memory units as erasure test areas, respectively performing cyclic erasure test on the erasure test areas of the FLASH memory units, and recording the erasure times and the erasure time of each time.
6. The data protection device of claim 4, wherein,
the evaluation and transfer module is specifically configured to:
and when the DATA storage areas of the FLASH storage units are erased, the erasing times are respectively recorded, the DATA wear degree of the DATA storage areas is compared and evaluated by the DATA wear lookup tables corresponding to the FLASH storage units, and the DATA of the FLASH storage units in the nonlinear change area are transferred to the FLASH storage units in the linear change area.
7. An electronic device, comprising: memory, a processor and a computer program stored on said memory and running on said processor, characterized in that the steps of the data protection method according to any one of claims 1 to 3 are realized when said computer program is executed by said processor.
8. A computer-readable storage medium, on which a computer program is stored, characterized in that the computer program, when being executed by a processor, implements the steps of the data protection method according to any one of claims 1 to 3.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110533052.5A CN113707206B (en) | 2021-05-17 | 2021-05-17 | Data protection method and device of FLASH memory, electronic equipment and storage medium |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110533052.5A CN113707206B (en) | 2021-05-17 | 2021-05-17 | Data protection method and device of FLASH memory, electronic equipment and storage medium |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN113707206A CN113707206A (en) | 2021-11-26 |
| CN113707206B true CN113707206B (en) | 2024-03-22 |
Family
ID=78648205
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202110533052.5A Active CN113707206B (en) | 2021-05-17 | 2021-05-17 | Data protection method and device of FLASH memory, electronic equipment and storage medium |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN113707206B (en) |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20130027153A (en) * | 2011-09-07 | 2013-03-15 | 삼성전자주식회사 | Control method of nonvolitile memory device |
| CN110399094A (en) * | 2019-06-06 | 2019-11-01 | 浙江大华技术股份有限公司 | Block processing method, device, solid state hard disk and the storage medium of solid state hard disk |
| CN110851079A (en) * | 2019-10-28 | 2020-02-28 | 华中科技大学 | Adaptive storage device loss balancing method and system |
| CN111009281A (en) * | 2019-12-06 | 2020-04-14 | 北京航空航天大学 | Method for evaluating erasing and writing performance of Flash memory under thermoelectric stress |
| CN111435403A (en) * | 2018-12-26 | 2020-07-21 | 深圳市中兴微电子技术有限公司 | Wear leveling method and device for flash memory system |
| WO2020248798A1 (en) * | 2019-06-14 | 2020-12-17 | 北京忆芯科技有限公司 | Method and device for intelligently identifying unreliable block in non-volatile storage medium |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8356152B2 (en) * | 2006-12-27 | 2013-01-15 | Intel Corporation | Initiative wear leveling for non-volatile memory |
| US9063874B2 (en) * | 2008-11-10 | 2015-06-23 | SanDisk Technologies, Inc. | Apparatus, system, and method for wear management |
| US10079068B2 (en) * | 2011-02-23 | 2018-09-18 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Devices and method for wear estimation based memory management |
-
2021
- 2021-05-17 CN CN202110533052.5A patent/CN113707206B/en active Active
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20130027153A (en) * | 2011-09-07 | 2013-03-15 | 삼성전자주식회사 | Control method of nonvolitile memory device |
| CN111435403A (en) * | 2018-12-26 | 2020-07-21 | 深圳市中兴微电子技术有限公司 | Wear leveling method and device for flash memory system |
| CN110399094A (en) * | 2019-06-06 | 2019-11-01 | 浙江大华技术股份有限公司 | Block processing method, device, solid state hard disk and the storage medium of solid state hard disk |
| WO2020248798A1 (en) * | 2019-06-14 | 2020-12-17 | 北京忆芯科技有限公司 | Method and device for intelligently identifying unreliable block in non-volatile storage medium |
| CN110851079A (en) * | 2019-10-28 | 2020-02-28 | 华中科技大学 | Adaptive storage device loss balancing method and system |
| CN111009281A (en) * | 2019-12-06 | 2020-04-14 | 北京航空航天大学 | Method for evaluating erasing and writing performance of Flash memory under thermoelectric stress |
Also Published As
| Publication number | Publication date |
|---|---|
| CN113707206A (en) | 2021-11-26 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US8909982B2 (en) | System and method for detecting copyback programming problems | |
| US9189313B2 (en) | Memory system having NAND-type flash memory and memory controller with shift read controller and threshold voltage comparison module | |
| WO2013132532A1 (en) | Semiconductor storage device having nonvolatile semiconductor memory | |
| US10613943B2 (en) | Method and system for improving open block data reliability | |
| TWI545572B (en) | Memory cell programming method, memory control circuit unit and memory storage apparatus | |
| US9881682B1 (en) | Fine grained data retention monitoring in solid state drives | |
| CN103955431A (en) | Data management method and apparatus in flash memory storage device | |
| US10126970B2 (en) | Paired metablocks in non-volatile storage device | |
| US11688483B2 (en) | Managing block retirement for temporary operational conditions | |
| KR20140133427A (en) | Method for managing data stored in flash memory and associated memory device and controller | |
| KR101005002B1 (en) | A method, system and computerreadable code for testing of flash memory | |
| CN105005450A (en) | Data writing method, memory storage device, and memory control circuit unit | |
| US20210081314A1 (en) | Unretiring memory device blocks | |
| US10340025B2 (en) | Data-storage device and block-releasing method | |
| CN102237139B (en) | Method for computing offset voltage and adjusting threshold voltage and memory device and controller | |
| CN116204126A (en) | Data read-write method and device for solid state disk, solid state disk and storage medium | |
| CN102789813B (en) | Method and device for controlling use of non-least significant bit page in storage device | |
| CN114063906A (en) | Management method and device for physical blocks in NAND flash memory and SSD (solid State disk) equipment | |
| CN113707206B (en) | Data protection method and device of FLASH memory, electronic equipment and storage medium | |
| US20100049904A1 (en) | Storage device using a multi-level flash memory as a single flash memory and method for the same | |
| WO2020015128A1 (en) | Method for identifying type of block in flash memory | |
| US9007829B2 (en) | Memory repairing method, and memory controller and memory storage apparatus using the same | |
| US8885406B2 (en) | Memory device, memory control device, and memory control method | |
| CN112433959A (en) | Method and device for realizing data storage processing, computer storage medium and terminal | |
| CN113409872B (en) | Method and device for inhibiting flash over-erasure, electronic equipment and storage medium |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |