CN110380178B - Millimeter wave radial multi-path power divider based on silicon micromachining - Google Patents
Millimeter wave radial multi-path power divider based on silicon micromachining Download PDFInfo
- Publication number
- CN110380178B CN110380178B CN201910690193.0A CN201910690193A CN110380178B CN 110380178 B CN110380178 B CN 110380178B CN 201910690193 A CN201910690193 A CN 201910690193A CN 110380178 B CN110380178 B CN 110380178B
- Authority
- CN
- China
- Prior art keywords
- waveguide
- radial
- silicon
- silicon wafer
- output transmission
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P5/00—Coupling devices of the waveguide type
- H01P5/12—Coupling devices having more than two ports
- H01P5/16—Conjugate devices, i.e. devices having at least one port decoupled from one other port
Landscapes
- Micromachines (AREA)
- Drying Of Semiconductors (AREA)
Abstract
The invention discloses a millimeter wave radial multi-path power distributor based on silicon micromachining, which consists of an upper silicon wafer and a lower silicon wafer, wherein the upper silicon wafer comprises an input transmission line based on a circular waveguide higher order mode, a radial waveguide upper wafer, an output transmission waveguide upper wafer and a plurality of output rectangular waveguide ports; the lower silicon wafer comprises a cylindrical boss, a radial waveguide lower wafer and an output waveguide lower wafer; the upper silicon wafer and the lower silicon wafer realize a complete radial power divider through a micro-mechanical bonding process. The millimeter wave radial power divider based on silicon micromachining has higher machining precision and more compact structure, is suitable for being installed subsequently by adopting a micro-assembly technology, can obtain higher integration level, and is mainly used for power distribution and synthesis of millimeter waves and above frequency bands.
Description
Technical Field
The invention relates to a power divider, in particular to a millimeter wave radial multi-path power divider based on silicon micromachining.
Background
In various millimeter wave systems, a high-power solid-state power amplifier is an important component. The output power of a single millimeter wave power device is limited, and larger power is obtained by means of power synthesis.
The power divider/synthesizer is the most basic synthesis unit, and in millimeter wave and higher frequency bands, the loss of the traditional plane synthesis structure and the traditional metal waveguide synthesis structure is obviously increased, so that the synthesis efficiency is influenced.
Disclosure of Invention
The invention aims to provide a silicon micro-machining-based millimeter wave radial multi-path power divider which is high in machining precision, small in loss, high in integration level and convenient to assemble.
The technical solution for realizing the purpose of the invention is as follows: a millimeter wave radial multi-path power distributor based on silicon micromachining comprises an upper silicon wafer and a lower silicon wafer, wherein the upper silicon wafer and the lower silicon wafer are connected in a micromechanical bonding mode;
the upper silicon slice comprises a high-order mode circular waveguide input transmission line, a radial waveguide upper slice concentric with the circular waveguide, a plurality of output transmission waveguide upper slices and a plurality of output rectangular waveguide ports; the input high-order mode circular waveguide input transmission line is directly connected with the center of the upper piece of the radial waveguide; the upper piece of the output transmission waveguide is radially distributed by taking the circular waveguide as the center;
the lower silicon chip comprises a cylindrical boss, a radial waveguide lower piece concentric with the circular waveguide and a plurality of output transmission waveguide lower pieces; the cylindrical boss is positioned in the center of the lower radial waveguide sheet and is positioned right below the high-order mode circular waveguide input transmission line; the output transmission waveguide lower piece is radially distributed by the center of the cylindrical boss.
Compared with the prior art, the invention has the following remarkable advantages: (1) the invention adopts the high-order mode circular waveguide as an input transmission line and the rectangular waveguide as an output transmission line, thereby realizing the multi-path power divider of any path; (2) in the invention, both the upper silicon wafer and the lower silicon wafer adopt a silicon wet etching or dry plasma etching technology to carry out deep silicon etching to form a waveguide cavity structure on the surface of the silicon; (3) the upper silicon chip and the lower silicon chip are combined into a whole by utilizing a micro-mechanical bonding technology; because the precision of silicon micro-machining can reach micron level, compared with the existing similar scheme, the precision of the power divider can be obviously improved, and the insertion loss of the power divider is reduced; meanwhile, the manufacturing cost is lower by adopting a silicon micro-machining process; the subsequent use can be assembled in a micro-assembly mode, and extremely high integration level is realized.
Drawings
Fig. 1 is a schematic view of the internal structure of the present invention.
Fig. 2(a), 2(b), and 2(c) are top, side, and three-dimensional structural views of the present invention.
FIG. 3 is a graph of standing wave coefficients for an embodiment of the present invention.
Fig. 4 is a graph of insertion loss for an embodiment of the present invention.
Detailed Description
As shown in fig. 1, fig. 2(a), fig. 2(b), and fig. 2(c), a silicon micromachining based millimeter wave radial multi-path power divider is suitable for millimeter wave and above frequency bands, and the whole divider is composed of an upper silicon wafer 1 and a lower silicon wafer 2, and the upper silicon wafer 1 and the lower silicon wafer 2 form a complete divider in a micromechanical bonding manner;
the upper silicon slice 1 comprises a higher mode circular waveguide input transmission line 3, a radial waveguide upper slice 4 concentric with the circular waveguide, a plurality of output transmission waveguide upper slices 5 and a plurality of output rectangular waveguide ports 6; the input high-order mode circular waveguide input transmission line 3 is arranged along the Z direction of the cylindrical coordinate system and is directly connected with the center of the radial waveguide upper piece 4; the plurality of output transmission waveguide upper pieces 5 are radially distributed along the r direction by taking a circular waveguide as a center;
the lower silicon wafer 2 comprises a cylindrical boss 7 and a radial waveguide lower piece 8 concentric with the circular waveguide, and a plurality of output waveguide transmission line lower pieces 9 along the r direction are uniformly arranged around the radial waveguide lower piece 8. The cylindrical boss 7 is positioned at the center of the lower radial waveguide sheet and is positioned right below the high-order mode circular waveguide input transmission line 3.
The input circular waveguide port 3 and all output rectangular waveguide ports 6 are on the same face of the splitter.
The operation mode of the circular waveguide of the high-order mode circular waveguide input transmission line 3 is a TM01 mode.
The operation mode of the circular waveguide of the high-order mode circular waveguide input transmission line 3 is the TE01 mode.
And both the upper silicon wafer and the lower silicon wafer adopt a silicon wet etching or dry plasma etching technology to carry out deep silicon etching to form a waveguide cavity structure on the surface of the silicon.
The number of the output transmission waveguide upper sheets 5 is the same as that of the output rectangular waveguide ports 6, and the output rectangular waveguide ports 6 are arranged at the end portions of the corresponding output transmission waveguide upper sheets 5.
The number of the output transmission waveguide upper sheets 5 is the same as that of the output transmission waveguide lower sheets 9, and the positions of the output transmission waveguide upper sheets and the output transmission waveguide lower sheets correspond to each other.
The output transmission waveguide upper plates 5 are uniformly distributed on the periphery of the radial waveguide upper plate 4.
The output transmission waveguide lower sheets 9 are uniformly distributed on the periphery of the radial waveguide lower sheet 8.
The upper silicon chip and the lower silicon chip are combined into a whole by utilizing a micro-mechanical bonding technology, a complete radial waveguide structure and N output waveguide transmission lines can be formed, and N output waveguide ports of the upper silicon chip structure are used as the output of the power divider at the outer end of each waveguide transmission line.
In the finally formed power divider, the N output waveguide transmission lines are all connected with the extension of the radial waveguide, and the included angle between adjacent output waveguide transmission lines is 360/N, where N may be equal to 2, or may be an integer greater than 2.
The invention is further elucidated with reference to the figures and examples.
Examples
A radial 8-way power divider based on a W wave band machined by silicon micromachining has an internal structure shown in figure 1. The input port is a circular waveguide transmission line working in a TM01 mode, impedance matching is achieved by the cylindrical boss, and 8-path rectangular waveguide port output is finally achieved through the radial waveguide. The distributor is composed of an upper structure and a lower structure, wherein the upper structure and the lower structure both adopt high-resistance silicon wafers with the thickness of 0.8mm as substrate materials, an upper waveguide cavity structure and a lower waveguide cavity structure are formed through a plasma etching technology, sputtering and metal layer electroplating processes are carried out in the upper silicon waveguide cavity structure and the lower silicon waveguide cavity structure, and finally the upper silicon wafer and the lower silicon wafer are combined into a whole through a micro-mechanical bonding process, so that the complete 8-path power distributor is realized. The size of the W-waveband radial 8-path power divider based on silicon micromachining is only 20mm multiplied by 0.8mm, and the subsequent assembly can realize extremely high integration level through a micro-assembly mode.
The results of electromagnetic simulation of the W-band radial 8-way power divider based on silicon micromachining in this embodiment are shown in fig. 3 and 4, where fig. 3 is a graph of simulation results of output standing waves, and the simulation results of the output standing waves are less than 1.2 in a frequency band of 90 to 100 GHz. FIG. 4 is a simulation result diagram of port isolation, where the insertion loss simulation result is less than 0.2dB in a frequency band of 90-100 GHz.
Claims (6)
1. A millimeter wave radial multi-path power distributor based on silicon micromachining is characterized in that the whole distributor consists of an upper silicon wafer (1) and a lower silicon wafer (2), and the upper silicon wafer (1) and the lower silicon wafer (2) are connected in a micromechanical bonding mode;
the upper silicon wafer (1) comprises a higher-order mode input circular waveguide (3), a radial waveguide upper plate (4) concentric with the circular waveguide, a plurality of output transmission waveguide upper plates (5) and a plurality of output rectangular waveguide ports (6); the higher-order mode input circular waveguide (3) is directly connected with the center of the radial waveguide upper piece (4); the output transmission waveguide upper piece (5) is radially distributed by taking the circular waveguide as the center;
the lower silicon wafer (2) comprises a cylindrical boss (7), a radial waveguide lower sheet (8) concentric with the circular waveguide and a plurality of output transmission waveguide lower sheets (9); the cylindrical boss (7) is positioned at the center of the lower radial waveguide sheet and is positioned right below the high-order mode input circular waveguide (3); the output transmission waveguide lower sheets (9) are radially distributed by taking the cylindrical boss (7) as a center; the input port of the higher-order mode input circular waveguide (3) and all the output rectangular waveguide ports (6) are on the same surface of the distributor;
the number of the output rectangular waveguide ports (6) is the same as that of the output transmission waveguide upper sheets (5) and the output transmission waveguide lower sheets (9); one end of each output transmission waveguide upper piece (5) is communicated with one output rectangular waveguide port (6), the other end of each output transmission waveguide upper piece is communicated with the radial waveguide upper piece (4), and each output transmission waveguide upper piece (5) is communicated with one output transmission waveguide lower piece (9); one end of each output transmission waveguide lower piece (9) is communicated with the radial waveguide lower piece (8), and the radial waveguide lower piece (8) is communicated with the radial waveguide upper piece (4).
2. The silicon micromachining based millimeter wave radial multiple power divider according to claim 1, characterized in that the higher order mode input circular waveguide (3) operates in the TM01 mode.
3. The silicon micromachining based millimeter wave radial multiple power divider according to claim 1, characterized in that the higher order mode input circular waveguide (3) operates in the TE01 mode.
4. The silicon micromachining based millimeter wave radial multi-path power divider according to claim 1, wherein the upper silicon wafer (1) and the lower silicon wafer (2) both adopt a silicon wet etching or dry plasma etching technology to perform deep silicon etching to form a waveguide cavity structure on the silicon surface.
5. The silicon micromachining based millimeter wave radial multiple power splitter according to claim 1, characterized in that the output transmission waveguide upper plate (5) is uniformly distributed on the periphery of the radial waveguide upper plate (4).
6. The silicon micromachining based millimeter wave radial multiple power splitter according to claim 1, characterized in that the output transmission waveguide lower plate (9) is evenly distributed on the periphery of the radial waveguide lower plate (8).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910690193.0A CN110380178B (en) | 2019-07-29 | 2019-07-29 | Millimeter wave radial multi-path power divider based on silicon micromachining |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910690193.0A CN110380178B (en) | 2019-07-29 | 2019-07-29 | Millimeter wave radial multi-path power divider based on silicon micromachining |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN110380178A CN110380178A (en) | 2019-10-25 |
| CN110380178B true CN110380178B (en) | 2021-07-13 |
Family
ID=68256834
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201910690193.0A Active CN110380178B (en) | 2019-07-29 | 2019-07-29 | Millimeter wave radial multi-path power divider based on silicon micromachining |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN110380178B (en) |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7385462B1 (en) * | 2005-03-18 | 2008-06-10 | The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration | Wideband radial power combiner/divider fed by a mode transducer |
| CN105322266A (en) * | 2015-11-17 | 2016-02-10 | 电子科技大学 | Circular waveguide higher mode TM01 based radial waveguide power synthesis/distributor |
| JP2016040858A (en) * | 2014-08-12 | 2016-03-24 | 日本高周波株式会社 | Waveguide type electric power synthesizing/distributing unit |
| CN106099288A (en) * | 2016-07-13 | 2016-11-09 | 西北核技术研究所 | It is applied to the compact five-port junction structure of three tunnel efficient high-isolation power combing |
| CN107611547A (en) * | 2017-09-13 | 2018-01-19 | 中国电子科技集团公司第十三研究所 | A kind of millimeter wave power synthesizer |
| CN107706493A (en) * | 2017-09-15 | 2018-02-16 | 电子科技大学 | High-isolation is the same as Axial and radial power divider |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003163509A (en) * | 2001-11-28 | 2003-06-06 | Murata Mfg Co Ltd | Dielectric line non-reciprocal circuit element and radio device |
| AU2003280468A1 (en) * | 2002-06-27 | 2004-01-19 | Memgen Corporation | Miniature rf and microwave components and methods for fabricating such components |
| CN102509840B (en) * | 2011-10-31 | 2014-02-26 | 华南理工大学 | High-isolation radial power synthesis amplifier with broadband air micro-strips |
| CN104051835B (en) * | 2014-07-04 | 2016-06-22 | 中国电子科技集团公司第五十四研究所 | Millimeter wave radial waveguide space power divider/combiner |
-
2019
- 2019-07-29 CN CN201910690193.0A patent/CN110380178B/en active Active
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7385462B1 (en) * | 2005-03-18 | 2008-06-10 | The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration | Wideband radial power combiner/divider fed by a mode transducer |
| JP2016040858A (en) * | 2014-08-12 | 2016-03-24 | 日本高周波株式会社 | Waveguide type electric power synthesizing/distributing unit |
| CN105322266A (en) * | 2015-11-17 | 2016-02-10 | 电子科技大学 | Circular waveguide higher mode TM01 based radial waveguide power synthesis/distributor |
| CN106099288A (en) * | 2016-07-13 | 2016-11-09 | 西北核技术研究所 | It is applied to the compact five-port junction structure of three tunnel efficient high-isolation power combing |
| CN107611547A (en) * | 2017-09-13 | 2018-01-19 | 中国电子科技集团公司第十三研究所 | A kind of millimeter wave power synthesizer |
| CN107706493A (en) * | 2017-09-15 | 2018-02-16 | 电子科技大学 | High-isolation is the same as Axial and radial power divider |
Also Published As
| Publication number | Publication date |
|---|---|
| CN110380178A (en) | 2019-10-25 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US11108124B2 (en) | Filter antenna | |
| KR101527247B1 (en) | Radial power amplification device with phase dispersion compensation of the amplification paths | |
| CN105304998B (en) | Novel broadband radial curve gradual change ridge space power distribution/synthesizer | |
| CN107275741B (en) | Novel millimeter wave waveguide radial power synthesis circuit | |
| CN108539338B (en) | A kind of a quarter mould substrate integral wave guide filter based on notching construction | |
| CN113517527B (en) | Single-sided double-ridge double-probe waveguide power divider, power combiner and synthesis method | |
| CN106532215B (en) | High-isolation multi-path radial power divider/synthesizer | |
| CN111668593A (en) | E-plane waveguide full-parallel feed broadband high-gain slot antenna and design method | |
| CN103943928A (en) | Plane balun with filter and power dividing characteristics | |
| US5229728A (en) | Integrated waveguide combiner | |
| CN104577268A (en) | Planar lowpass-bandpass triplexer | |
| CN101436581A (en) | Microwave low-waveband submicron hybrid integrated circuit and preparation technique thereof | |
| CN110380178B (en) | Millimeter wave radial multi-path power divider based on silicon micromachining | |
| CN102324615A (en) | Microwave millimeter wave planar broadband high-power micro-strip power synthesizer | |
| CN104577349A (en) | High out-of-band rejection cavity filter antenna array | |
| CN104466316B (en) | A kind of X-band defect ground structure half-modular substrate integral wave guide filter | |
| CN110600415B (en) | Three-dimensional stacking alignment method | |
| CN112768863A (en) | HMSIW-based K-waveband novel power divider and design method thereof | |
| CN107799859B (en) | Non-cascaded arbitrary odd-path microstrip power divider | |
| CN110739517B (en) | One-to-three single-ended-balanced microwave filtering power distribution system | |
| CN115064851A (en) | Rectangular cavity and round cavity multimode coupled substrate integrated waveguide duplexer | |
| CN103746163A (en) | Air-medium strip-line Wilkinson large-power synthesizer | |
| CN110473756B (en) | Plane integratable slow wave structure and manufacturing method thereof | |
| CN110299897B (en) | Vector synthesis based miniaturized multimodal equalizer | |
| KR20070016970A (en) | RF matching network of a vacuum processing chamber and configuration methods |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |