CN107611547A - A kind of millimeter wave power synthesizer - Google Patents
A kind of millimeter wave power synthesizer Download PDFInfo
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- CN107611547A CN107611547A CN201710823574.2A CN201710823574A CN107611547A CN 107611547 A CN107611547 A CN 107611547A CN 201710823574 A CN201710823574 A CN 201710823574A CN 107611547 A CN107611547 A CN 107611547A
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Abstract
The invention discloses a kind of millimeter wave power synthesizer, it is related to millimeter wave power device arts；The power synthesis device includes first layer silicon chip and second layer silicon chip, and first layer silicon chip top surface is together with second layer silicon chip back side wafer-level packaging gold gold bonding；The first layer silicon chip is provided with power distributing network, power amplifier chip and the power synthesis network that through hole is formed, and the back side power distributing network of first layer silicon chip and the bifurcation mouth of power synthesis network are provided with the blind slot of wet processing etching；First layer silicon chip passes through wet etching blind slot, place amplifier chip, power distributing network and power synthesis network form substrate integrated wave guide structure using silicon substrate MEMS technology etching vias and realized, the power synthesis device is easy to integrate with the amplifier circuit of plane, with larger quality factor, so that loss is smaller, combined coefficient is high, and wide band matching can be achieved.
Description
Technical field
The present invention relates to millimeter wave power device arts.
Background technology
Millimeter wave refers to that frequency is 30GHz-300GHz, and wavelength is 10mm-1mm electromagnetic wave.Because millimeter wave frequency band has
There are the characteristics such as the short, bandwidth of wavelength, so being widely used in various fields.Especially in terms of guidance technology, because millimeter
The frequency of wave frequency section is higher, also has certain photoelectric guidance characteristic while possessing microwave guidance characteristic, so millimeter wave
The characteristics of guidance technology can be strong by microwave guidance technology penetrability, and photoelectric guidance device volume is small, angular resolution is high combines
Get up, there is very excellent guidance performance.And a key technology in millimeter-wave systems design is exactly the big work(of high efficiency
The design of the power device of rate.But with the rise of frequency, the power synthetic technique form of traditional microstrip line and metal case
Many problems are encountered in millimeter wave frequency band.
For example, using the power synthetic technique of microstrip line mode, because quality factor are low, insertion loss is big, influences power
The efficiency of synthesis；And although the power combiner combined coefficient of use metal waveguide form is high, in millimeter wave frequency band, low essence
The method of the intermetallic composite coating waveguide of degree does not use, and high-precision intermetallic composite coating waveguide involves great expense, in addition the physical dimension
Greatly, section is high, it is difficult to reaches modern mm wave RF front end miniaturization and the requirement being easily integrated.
The content of the invention
The technical problem to be solved in the present invention is to be directed to above-mentioned the deficiencies in the prior art, there is provided a kind of millimeter wave power synthesis
Device, there are larger quality factor so that loss is smaller, and combined coefficient is high, and it is small to easily reach modern mm wave RF front end
Typeization and the requirement being easily integrated.
In order to solve the above technical problems, the technical solution used in the present invention is：Including first layer silicon chip and second layer silicon
Piece, first layer silicon chip top surface and second layer silicon chip back side by wafer-level packaging gold gold bonding together with；The first layer silicon chip
It is provided with power distributing network, power amplifier places column and power synthesis network；Second layer silicon chip back side is provided with and first
Layer silicon chip identical power distributing network and power synthesis network；It is provided with and the between power distributing network and power synthesis network
One layer of silicon on-chip power amplifier places the groove that column is engaged；The back side whole plating metal of first layer silicon chip, described
Power distributing network, the power amplifier of the top surface of one layer of silicon chip place column and power synthesis network parcel plating metal；Institute
State the power distributing network and power synthesis network plating metal of second layer silicon chip back side, second layer silicon chip summit portion plating gold
The electric-adding point of amplifier chip is connected and is drawn out to the energized position of second layer silicon chip, power amplifier core by category by silicon hole
The grid of piece is connected with grid, drains and is connected with drain electrode, for being powered up to power amplifier chip；It is characterized in that：Described
It is by some independences first that one layer of silicon chip, which is provided with power distributing network, power amplifier placement column and power synthesis network,
What arrays of openings was formed, plating metal on the inside of first through hole, form substrate integrated planar transmission waveguide structure.
Preferably, first layer silicon chip back side power distributing network and power synthesis network bifurcation mouth be provided with blind slot and
Second through hole；To realize wide band matching and power distribution.
Preferably, power distributing network structure is：The input of power distributing network is divided into two-way first order branch, its
In per first order branch road be all the way divided into two-way second level branch road, be divided into two-way third level branch road again per second level branch road all the way, the
Each pass goes out all to be converted to CPWG interfaces in three-level branch road, and amplifier is bakeed by conducting resinl high temperature and is bonded in power amplifier
Place on column, the rf inputs of CPWG interfaces and amplifier device chip are bonded together by Micro-package technique；The work(
Rate synthesizes network structure：It is connected in third level branch road per the RF output end all the way all with a power amplifier, the third level
Be also CPWG forms per port all the way in branch road, in third level branch road per port all the way by Micro-package technique by amplifier
The RF output end of chip is bonded in third level branch road on per CPWG ports all the way, two-way third level branch road synthesis all the way the
Two level branch road, the synthesis of two-way second level branch road all the way first order branch road so as to exporting.
Preferably, first through hole and the second through hole are formed by dry etching.
Preferably, blind slot is formed by wet etching.
Preferably, blind slot is rectangle.
Preferably, the corner of power distributing network and power synthesis network is provided with third through-hole.
It is using beneficial effect caused by above-mentioned technical proposal：The present invention is simple in construction, has broadband, low damage
Consumption, low section, the power combining structures being easily integrated；First through hole forms power distributing network, power amplifier places column
And power synthesis network, first through hole inner metalization form substrate integrated wave guide structure, the structure is planar transmission structure, easily
Integrated in the amplifier circuit with plane；The power distribution of power division network and matching can be real by adjusting the position of the second through hole 12
Existing, the ratio of the position-adjustable power distribution of the second through hole 12 in the horizontal direction, the second through hole 12 is in the position of vertical direction
The matching of adjustable power splitter；Third through-hole is in order that electromagnetic transmission eliminates discontinuous caused mismatch；Wide band
With by having expanded bandwidth of operation in first layer silicon chip back side wet etching blind slot and realization of metallizing, blind slot；Turned round in waveguide
Local dry-etched through-holes and metallize, can be achieved wide band matching；In terms of machining accuracy, using semiconductor machining skill
Art, it is ensured that machining accuracy；In terms of loss is reduced, the power combining structures because with waveguide structure, therefore with compared with
Big quality factor so that loss is smaller, and combined coefficient is high.
Brief description of the drawings
Fig. 1 is the CPWG-SIW-CPWG of the present invention（Coplanar waveguide ground-substrate integration wave-guide-coplanar waveguide ground）Cross
Cross structural plan schematic diagram；
Fig. 2 is the schematic rear view of first layer silicon chip of the present invention；
Fig. 3 is the top schematic diagram of first layer silicon chip of the present invention；
Fig. 4 is the schematic rear view of second layer silicon chip of the present invention；
Fig. 5 is the top schematic diagram of second layer silicon chip of the present invention.
In figure：1st, power distributing network；2nd, power synthesis network；3rd, power amplifier places column；4th, blind slot；5th, first
Through hole；6th, first order branch road；7th, second level branch road；8th, third level branch road；9th, electric-adding point；10th, groove；11st, energized position；12、
Second through hole；13rd, third through-hole.
Embodiment
The present invention is further detailed explanation with reference to the accompanying drawings and detailed description.
As Figure 1-5, it is a kind of one embodiment of millimeter wave power synthesizer of the present invention, including first layer silicon chip
With second layer silicon chip, first layer silicon chip top surface and second layer silicon chip back side by wafer-level packaging gold gold bonding together with；It is described
First layer silicon chip is provided with power distributing network 1, power amplifier places column 3 and power synthesis network 2；Second layer silicon chip is carried on the back
Face is provided with and first layer silicon chip identical power distributing network 1 and power synthesis network 2；Second layer silicon chip will draw amplifier core
The energized position of piece, the difficulty that probe powers up when reducing test；It is provided between power distributing network 1 and power synthesis network 2
The groove 10 being engaged with first layer silicon on-chip power amplifier placement column 3；The back side whole plating metal of first layer silicon chip,
Power distributing network 1, the power amplifier of the top surface of the first layer silicon chip place column 3 and the part of power synthesis network 2 electricity
Plate metal；The power distributing network 1 and the plating metal of power synthesis network 2 of the second layer silicon chip back side, second layer silicon chip top
The electric-adding point 9 of amplifier chip is connected and is drawn out to the energized position of second layer silicon chip by face part plating metal by silicon hole
11, the grid of power amplifier chip is connected with grid, drains and is connected with drain electrode, for being powered up to power amplifier chip；Its
It is characterised by：The first layer silicon chip is provided with power distributing network 1, power amplifier places column 3 and power synthesis network 2
It is by some independent arrangement forms of first through hole 5, the inner side plating metal of first through hole 5, forms the transmission of substrate integrated planar
Waveguiding structure.
First layer silicon chip top surface and second layer silicon chip back side by golden gold bonding together with；Power point on first layer silicon chip
Distribution network 1 and power synthesis network 2 are all combined by many first through hole 5, and the inner metal of first through hole 5 is formed
Substrate integrated wave guide structure, the structure are planar transmission structures, are easy to integrate with the amplifier circuit of plane, power distributing network
1 connection power amplifier places column 4, and power amplifier places column 4 and connects power synthesis network 2, and power amplifier is placed
Column 4 is used to place power amplifier chip.
In terms of machining accuracy, using semiconductor processing technology, it is ensured that machining accuracy；In terms of loss is reduced, the work(
Rate composite structure is because have the structure of waveguide, therefore have larger quality factor so that loss is smaller, and combined coefficient is high.
The transmission of microwave signal uses substrate integrated wave guide structure, has higher quality factor, can reduce power combing
Loss, improve power combining efficiency；The silicon chip for being coated with metal bonding is formed using silicon substrate MEMS technology, power can be realized
The miniaturization of synthesizer and low section, are easily integrated.
Embodiment 1：
First layer silicon chip and second layer silicon chip structure are same as described above.
The back side power distributing network 1 of first layer silicon chip and the bifurcation mouth of power synthesis network 2 are logical provided with blind slot 4 and second
Hole 12；To realize wide band matching and power distribution.In terms of broadband matching, the power combining structures are in first layer silicon chip
Back side wet etching blind slot, and metallize, in the second through hole of waveguide corner dry etching 12 and metallize, can be achieved
Wide band matching, blind slot have expanded bandwidth of operation.
The power distribution of power division network and matching can realize that the second through hole 12 is in level by adjusting the position of the second through hole 12
The ratio of the position-adjustable power distribution in direction, matching of second through hole 12 in the position-adjustable power splitter of vertical direction.
Embodiment 2：
First layer silicon chip and second layer silicon chip structure are same as described above.
The structure of power distributing network 1 is：The input of power distributing network 1 is divided into two-way first order branch, each of which
Road first order branch road, which has, is divided into two-way second level branch road 7, is divided into two-way third level branch road 8 again per second level branch road 7 all the way, and the 3rd
Each pass goes out all to be converted to CPWG in level branch road 8（Co-plane waveguide）Interface, amplifier are bakeed viscous by conducting resinl high temperature
It is connected on power amplifier to place on column 3, the rf inputs of CPWG interfaces and amplifier device chip pass through Micro-package technique key
It is combined；The structure of power synthesis network 2 is：Per the radio frequency all with a power amplifier all the way in third level branch road 8
Output end is connected.Every port all the way is also CPWG forms in third level branch road 8, is led in third level branch road 8 per port all the way
Cross Micro-package technique the RF output end of amplifier chip is bonded in third level branch road 8 on every CPWG ports all the way, two
Road third level branch road 8 synthesizes second level branch road 7 all the way, and two-way branch road 7 is synthesized all the way so as to export.Power synthesis network 2 and work(
Rate distribution network 1 is all 8 tunnels.
The back side power distributing network 1 of first layer silicon chip and the bifurcation mouth of power synthesis network 2 are provided with blind slot and second and led to
Hole 12.
The power amplifier of the top surface of first layer silicon chip places column 4, the groove 10 and second of second layer silicon chip back side
The same position of groove 10 of layer silicon chip top surface is provided with electric-adding point 9, for being powered up to power amplifier chip.
The power distributing network 1 and power synthesis network 2 of second layer silicon chip back side are identical with first layer silicon chip, because silicon substrate
MEMS metal bondings technique needs have certain facing area between two layers of silicon chip metal.
Embodiment 3：
First layer silicon chip and second layer silicon chip structure are same as described above.
The through hole 12 of first through hole 5 and second is formed by dry etching.
Embodiment 4：
First layer silicon chip and second layer silicon chip structure are same as described above.
Blind slot 4 is formed by wet etching.
Embodiment 5：
First layer silicon chip and second layer silicon chip structure are same as described above.
Blind slot 4 is rectangle.By adjust the position of blind slot 4, the depth adjustment power distributing network of length and width and blind slot and
The Broadband Matching of power synthesis network.
Embodiment 6：
The corner of power distributing network 1 and power synthesis network 2 is provided with third through-hole 13, and third through-hole 13 can eliminate electromagnetism
The mismatch phenomenon caused by discontinuous in ripple transmitting procedure.
The foregoing is merely illustrative of the preferred embodiments of the present invention, is not intended to limit the invention, all essences in the present invention
All any modification, equivalent and improvement made within refreshing and principle etc., should be included in the scope of the protection.
Claims (7)
- A kind of 1. millimeter wave power synthesizer, it is characterised in that：Including first layer silicon chip and second layer silicon chip, first layer silicon chip Top surface and second layer silicon chip back side by wafer-level packaging gold gold bonding together with；The first layer silicon chip is provided with power distribution Network（1）, power amplifier place column（3）And power synthesis network（2）；Second layer silicon chip back side is provided with and first layer silicon chip Identical power distributing network（1）And power synthesis network（2）；Power distributing network（1）And power synthesis network（2）Between set Have and place column with first layer silicon on-chip power amplifier（3）The groove being engaged（10）；The back side of first layer silicon chip is all electric Plate metal, the power distributing network of the top surface of the first layer silicon chip（1）, power amplifier place column（3）And power combing Network（2）Parcel plating metal；The power distributing network of the second layer silicon chip back side（1）And power synthesis network（2）Plating Metal, second layer silicon chip summit portion plating metal is by silicon hole by the electric-adding point of amplifier chip（9）It is connected and is drawn out to The energized position of second layer silicon chip（11）；The grid of power amplifier chip is connected with grid, drain with drain electrode be connected, for Power amplifier chip powers up；It is characterized in that：The first layer silicon chip is provided with power distributing network（1）, power amplifier Place column（3）And power synthesis network（2）It is by some independent first through hole（5）Arrangement form, first through hole（5）It is interior Side plating metal, form substrate integrated planar transmission waveguide structure.
- A kind of 2. millimeter wave power synthesizer according to claim 1, it is characterised in that the back of the body of the first layer silicon chip Face power distributing network（1）And power synthesis network（2）Bifurcation mouth be provided with blind slot（4）With the second through hole（12）；To realize width The matching of frequency band and power distribution.
- A kind of 3. millimeter wave power synthesizer according to claim 1 or 2, it is characterised in that the power distributing network （1）Structure is：Power distributing network（1）Input be divided into two-way first order branch（6）, each of which road first order branch road （6）It is divided into two-way second level branch road（7）, per second level branch road all the way（7）It is divided into two-way third level branch road again（8）, third level branch Road（8）In each pass go out all to be converted to CPWG interfaces, amplifier is bakeed by conducting resinl high temperature to be bonded in power amplifier and puts Put column（3）On, the rf inputs of CPWG interfaces and amplifier device chip are bonded together by Micro-package technique；The work( Rate synthesizes network（2）Structure is：Third level branch road（8）In be connected per RF output end all the way all with a power amplifier, Third level branch road（8）In be also CPWG forms per port all the way, third level branch road（8）In filled per port all the way by micro-group The RF output end of amplifier chip is bonded in third level branch road by technology（8）In per CPWG ports all the way on, two-way the 3rd Level branch road（8）Synthesize second level branch road all the way（7）, two-way second level branch road（7）Synthesize first order branch road all the way（6）So as to defeated Go out.
- A kind of 4. millimeter wave power synthesizer according to claim 1, it is characterised in that the first through hole（5）With Two through holes（12）It is to be formed by dry etching.
- A kind of 5. millimeter wave power synthesizer according to claim 2, it is characterised in that the blind slot（4）It is by wet Method etches what is formed.
- A kind of 6. millimeter wave power synthesizer according to claim 2 or 5, it is characterised in that the blind slot（4）For length It is square.
- A kind of 7. millimeter wave power synthesizer according to claim 1, it is characterised in that the power distributing network（1） And power synthesis network（2）Corner be provided with third through-hole（13）.
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| CN201710823574.2A CN107611547B (en) | 2017-09-13 | 2017-09-13 | Millimeter wave power synthesis device |
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| CN201710823574.2A CN107611547B (en) | 2017-09-13 | 2017-09-13 | Millimeter wave power synthesis device |
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| CN107611547B CN107611547B (en) | 2019-12-17 |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109755697A (en) * | 2018-11-27 | 2019-05-14 | 西安电子科技大学 | Substrate based on through silicon via integrates folded waveguide filter and preparation method thereof |
| CN110380178A (en) * | 2019-07-29 | 2019-10-25 | 中国电子科技集团公司第五十五研究所 | Millimeter wave radial direction multipath power distributor based on micromachining processing |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101621149A (en) * | 2008-07-01 | 2010-01-06 | 电子科技大学 | Method for designing microwave and millimeter-wave spatial power synthesis amplifier |
| CN105826275A (en) * | 2016-03-21 | 2016-08-03 | 中国电子科技集团公司第五十五研究所 | Silicon-based multichannel TR assembly and design method |
-
2017
- 2017-09-13 CN CN201710823574.2A patent/CN107611547B/en active Active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101621149A (en) * | 2008-07-01 | 2010-01-06 | 电子科技大学 | Method for designing microwave and millimeter-wave spatial power synthesis amplifier |
| CN105826275A (en) * | 2016-03-21 | 2016-08-03 | 中国电子科技集团公司第五十五研究所 | Silicon-based multichannel TR assembly and design method |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109755697A (en) * | 2018-11-27 | 2019-05-14 | 西安电子科技大学 | Substrate based on through silicon via integrates folded waveguide filter and preparation method thereof |
| CN110380178A (en) * | 2019-07-29 | 2019-10-25 | 中国电子科技集团公司第五十五研究所 | Millimeter wave radial direction multipath power distributor based on micromachining processing |
| CN110380178B (en) * | 2019-07-29 | 2021-07-13 | 中国电子科技集团公司第五十五研究所 | Millimeter wave radial multi-path power divider based on silicon micromachining |
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