CN110379777A - A kind of spring packaging structure for semiconductor chip - Google Patents
A kind of spring packaging structure for semiconductor chip Download PDFInfo
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- CN110379777A CN110379777A CN201910519900.XA CN201910519900A CN110379777A CN 110379777 A CN110379777 A CN 110379777A CN 201910519900 A CN201910519900 A CN 201910519900A CN 110379777 A CN110379777 A CN 110379777A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/065—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L27/00
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
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Abstract
The present invention provides a kind of spring packaging structure for semiconductor chip, including top electrode, lower electrode, annular packaging structure and multiple chip subelements；Multiple chip subelements are set between top electrode and lower electrode；Annular packaging structure is sealed at top electrode, lower electrode side and constitutes closed shell structure with top electrode, lower electrode.The present invention can be effectively reduced packaging cost, the environmental suitability of semiconductor chip is improved, and extends the service life of semiconductor chip, it is versatile, and the packaging cost of semiconductor chip failure can be utmostly reduced, significantly improve the yield of semiconductor chip packaging.Shell structure is sealing structure in the present invention, semiconductor chip can be substantially improved to the adaptability of application environment, shell structure inside is filled with Silica hydrogel, can greatly improve semiconductor chip insulation voltage endurance capability, so that the voltage class of semiconductor chip is higher, reliability is stronger.
Description
Technical field
The present invention relates to power semiconductor technologies fields, and in particular to a kind of spring packaging knot for semiconductor chip
Structure.
Background technique
Rigidity encapsulation and spring packaging are divided into the encapsulating structure pressing force way of contact of semiconductor chip.Rigidity therein
In encapsulation, chip two sides are metallic hard deck contact, and such structure type is simple, but equal to chip thickness consistency and pressure
Even property requires height, and the spreader surface requirement on machining accuracy selected when to inner structural members and application is stringent.With device capacitance
It improves, the increase of inside chip quantity, pressure and compression joint area can also increase accordingly, and large area high-precision processing is realized more tired
It is difficult.Since chip contacts firmly with metal structure, the pressure difference that the position of different thin and thicks is born in press fitting is very big, and pressure is not
The difference that contact resistance and thermal resistance can be caused makes device inside region is warm-natured to spend high phenomenon, final to accelerate chip old
Change failure.If stress is concentrated seriously, chip will be damaged by pressure by directly abrasion.In spring packaging therein, inside configuration increases
Spring mechanism, contacting from crimping firmly with each chip in structure becomes Elastic Contact.Since camber of spring power is much smaller than material
Self-deformation internal stress, under external pressure effect, inevitable dimensional discrepancy can be transformed into spring deflection, can be preferable
Thickness error between ground compatible chip keeps the equilibrium of chip pressure.But matches between general spring and be combined into line contact, spring
Cannot function as the water conservancy diversion carrier of chip Yu dispatch from foreign news agency interpolar, in addition device in press fitting in use, since spring is compressed, internal structure
Biggish displacement can be generated, therefore under the premise of not influencing device reliability, need the water conservancy diversion carrier of chip Yu dispatch from foreign news agency interpolar
It is adapted to deformation displacement, and has good conductive characteristic.
In the prior art in the spring packaging structure of semiconductor chip, more semiconductor chips to be welded on same simultaneously
On block molybdenum plate, subelement is constituted, if any semiconductor chip fails in subelement, causes the subelement to fail, therefore
Extremely stringent to cDNA microarray during spring packaging, packaging cost is high, and uses Open architecture, and external environment is to inside
Each components are affected, and cause the environmental suitability of semiconductor chip poor, especially under salt fog state, greatly shorten
The service life of semiconductor chip.
Summary of the invention
In order to overcome the shortcomings of that high above-mentioned packaging cost in the prior art, environmental suitability difference and service life are short, this hair
It is bright that a kind of spring packaging structure for semiconductor chip, including top electrode, lower electrode, annular packaging structure and multiple cores are provided
Piece subelement；Multiple chip subelements are set between the top electrode and lower electrode；Annular packaging structure is sealed at
Electrode, lower electrode side and closed shell structure is constituted with top electrode, lower electrode, can be effectively reduced packaging cost, improve
The environmental suitability of semiconductor chip, and extend the service life of semiconductor chip.
In order to achieve the above-mentioned object of the invention, the present invention adopts the following technical scheme that:
The present invention provides a kind of spring packaging structure for semiconductor chip, including top electrode, lower electrode, annular encapsulation
Structure and multiple chip subelements；
The multiple chip subelement is set between the top electrode and lower electrode；
The annular packaging structure is sealed at the top electrode, lower electrode side, and with the top electrode, lower electrode
Constitute closed shell structure.
It further include upper flange and lower flange；
The top electrode is welded by upper flange and annular packaging structure, and the lower electrode passes through lower flange and annular encapsulation
Structure welding.
The annular packaging structure is ceramic ring.
The cross section of the ceramic ring is round, oval or rectangular.
The spring packaging structure further includes limiter；
The limiter is located inside ceramic ring, and the inner wall of the outer wall fitting ceramic ring of the limiter.
The chip subelement includes bipolar cake core subelement and three-level cake core subelement in parallel.
The bipolar cake core subelement includes the first pole C molybdenum sheet, bipolar cake core, the first pole E molybdenum sheet, the first disc spring group
Part and first annular positioning framework；
First pole C molybdenum sheet upper surface is contacted with the base pressure of top electrode, both ends and first annular positioning framework
It is fixed；
The collector of the bipolar cake core and the lower surface of the first pole C molybdenum sheet are fixed, emitter and the first pole E molybdenum sheet
Upper surface pressure contact, the upper end of the lower surface of the first pole E molybdenum sheet and the first dished spring assembly contacts with pressure, described first
The lower end of dished spring assembly and the upper surface of lower electrode contact with pressure.
The number of the bipolar cake core, the first pole E molybdenum sheet number, the first dished spring assembly number are equal；
The number of the bipolar cake core is more than or equal to 1 and is less than or equal to 2.
The three-level cake core subelement includes the 2nd pole C molybdenum sheet, triple-pole type chip, the 2nd pole E molybdenum sheet, the second disc spring group
Part, third dished spring assembly, the second circular orientation frame, bonding line, DBC liner plate and grid circuit plate；
The upper surface of 2nd pole C molybdenum sheet is contacted with the base pressure of top electrode, both ends and the second circular orientation frame
Frame is fixed；The collector of the three-level cake core and the lower surface of the 2nd pole C molybdenum sheet are fixed, emitter and the 2nd pole E molybdenum sheet
Upper surface pressure contact, the upper end of the lower surface of the 2nd pole E molybdenum sheet and the second dished spring assembly contacts with pressure, described second
The lower end of dished spring assembly and the upper surface of lower electrode contact with pressure；
The upper surface of the DBC liner plate is connect with the bottom of the 2nd pole C molybdenum plate, and lower surface is upper with third dished spring assembly
End pressure contact, and lower surface connects the grid of three-level cake core by bonding line；The lower end of the third dished spring assembly and grid
The upper surface of polar circuit plate contacts with pressure, and the upper surface of the lower surface of the grid circuit plate and lower electrode contacts with pressure.
The number of the triple-pole type chip, the 2nd pole E molybdenum sheet number, the second dished spring assembly number are equal；
The number of the triple-pole type chip is more than or equal to 1 and is less than or equal to 2.
Between the bipolar cake core and first annular positioning framework, the triple-pole type chip and the second circular orientation frame
Between fill Silica hydrogel.
The first annular positioning framework and the second circular orientation frame are all made of flame-retarded resin class modified plastics；
The grid circuit plate uses polyimides bottom plate, and its upper and lower surfaces covers copper.
First pole C molybdenum sheet is fixed by viscose glue and first annular positioning framework, and two C pole molybdenum sheet passes through viscose glue and second
Circular orientation frame is fixed；
Pass through between the bipolar cake core and the first pole C molybdenum sheet, between the three-level cake core and the 2nd pole C molybdenum sheet
Welding or sintering process are fixed；
It is welded to connect between DBC liner plate and the 2nd pole C molybdenum plate or is fixed by sintering process.
First dished spring assembly, the second dished spring assembly and third dished spring assembly include multiple disc springs, multiple disc springs with
Pairing mode combines.
The quantity and model of the disc spring are determined according to the area, deflection and pressure value of single semiconductor chip；
The deflection is more than or equal to 1mm and is less than or equal to 3mm, and the pressure value is more than or equal to 800N and is less than or equal to
1000N。
The limiter uses SMC composite material, and the upper end is fixed by screw or bonding with top electrode, and lower end is under
Electrode keeps pre-determined distance, and the pre-determined distance is equal to the decrement inside chip subelement under dished spring assembly working condition.
The number of the bipolar cake core subelement and three-level cake core subelement by the spring packaging structure electric current
Grade determines.
Compared with the immediate prior art, technical solution provided by the invention is had the advantages that
Spring packaging structure provided by the present invention for semiconductor chip includes top electrode, lower electrode, annular encapsulation knot
Structure and multiple chip subelements；Multiple chip subelements are set between top electrode and lower electrode；Annular packaging structure sealing is set
It is placed in top electrode, lower electrode side and constitutes closed shell structure with top electrode, lower electrode, can be effectively reduced and be packaged into
This, improves the environmental suitability of semiconductor chip, and extend the service life of semiconductor chip；
The present invention can be increased and decreased by the quantity to chip subelement and rearrange combination, flexibly realize semiconductor core
The different current class of piece, it is versatile；
Bipolar cake core subelement and three-level cake core subelement in the present invention only include 1~2 semiconductor chip,
When semiconductor chip fails, the chip subelement of the failure need to only be rejected, remaining normal chip subelement can be with
It reuses, can utmostly reduce the packaging cost of semiconductor chip failure, significantly improve the yield of semiconductor chip packaging；
Shell structure is sealing structure in the present invention, and semiconductor chip can be substantially improved to the adaptability of application environment, pipe
It is filled with Silica hydrogel inside shell structure, semiconductor chip insulation voltage endurance capability can be greatly improved, so that the voltage of semiconductor chip
Higher grade, and reliability is stronger；
When spring packaging structure provided by the invention does not install compression, there is pre-determined distance between limiter and lower electrode, when
When applying pressure more than rated operating pressure, limiter is in contact with electrode is given, and excess pressure can apply on the stopper,
To guarantee that chip subelement will not cross load, internal semiconductor chip is not subject to crushing；
In spring packaging structure provided by the invention, by increasing the deflection of dished spring assembly, each part size is reduced
Influence of the deviation to pressure distributing homogeneity, guarantees the pressure consistency of each semiconductor chip, and thermal expansion overstress is avoided to ask
Topic reduces the difficulty to internal structure external structure processing, compact-sized, is easily installed.
Detailed description of the invention
Fig. 1 is the spring packaging structural schematic diagram that semiconductor chip is used in the embodiment of the present invention；
Fig. 2 is chip subelement schematic layout pattern in the embodiment of the present invention；
In figure, 1, top electrode；2, lower electrode；3, limiter；4, chip subelement；5, grid circuit plate；6, the 2nd pole C molybdenum
Piece；7, three-level cake core；8, the 2nd pole E molybdenum sheet；9, the second dished spring assembly；10, bonding line；11, DBC liner plate；12, the second annular
Positioning framework；13, Silica hydrogel；14, third dished spring assembly, the 15, the first pole C molybdenum sheet, 16, bipolar cake core；17, the first pole E molybdenum
Piece；18, the first dished spring assembly；19, first annular positioning framework；20, annular packaging structure；21, upper flange；22, lower flange.
Specific embodiment
The present invention is described in further detail below in conjunction with the accompanying drawings.
The embodiment of the present invention provides a kind of spring packaging structure for semiconductor chip, as shown in Figure 1 comprising power on
Pole 1, lower electrode 2, annular packaging structure 20 and multiple chip subelements 4；
Multiple chip subelements 4 are set between top electrode 1 and lower electrode 2；Annular packaging structure 20 is sealed at
Electrode 1,2 side of lower electrode and closed shell structure is constituted with top electrode 1, lower electrode 2.
Spring packaging structure provided in an embodiment of the present invention further includes upper flange 21 and lower flange 22；
Top electrode 1 is welded by upper flange 21 and annular packaging structure 20, and lower electrode 2 passes through lower flange 22 and annular encapsulation
Structure 20 is welded.Top electrode 1 and lower connecting flange material are oxygen-free copper, and 20 material of ceramic ring is Al2O3Ceramics, to meet high pressure
Multiple full skirts are arranged in creepage distance and electric clearance requirement, ceramic ring 20, have high insulating property.Chip is completed inside shell structure
After subelement 4 assembles, using cold welding, argon arc welding or laser welding process, upper flange 21 and lower flange 22 are welded together,
Complete encapsulation.
Annular packaging structure 20 is ceramic ring, and the cross section of ceramic ring is round, oval or rectangular.
Spring packaging structure further includes limiter 3；
Limiter 3 is located inside ceramic ring, and the inner wall of the outer wall fitting ceramic ring of limiter 3.
Limiter 3 has high insulation and high mechanical strength using SMC composite material is used.Bullet is carried out to semiconductor chip
Property encapsulation when, top electrode 1 and lower 2 surface of electrode apply installation pressure, and dished spring assembly reaches specified deflection, at this time limiter 3
It is in contact with lower electrode 2, plays position-limiting action, prevent dished spring assembly further occurrence from deforming, extra pressure is by limiter 3
It undertakes, prevents chip stress is excessive from leading to semiconductor chip failure.The upper end of limiter 3 passes through screw or bonding and top electrode 1
Fixed, lower end and lower electrode 2 keep pre-determined distance, and pre-determined distance is equal to 4 inside dished spring assembly working condition of chip subelement
Under decrement.Chip subelement 4 realizes horizontal direction positioning by limiter 3, through the top electrode 1 in shell structure under
Electrode 2 realizes vertical direction positioning.
Semiconductor chip is divided into bipolar cake core 16 and three-level cake core 7 according to type；There are two bipolar cake cores 16
Electrode is located at the tow sides of chip, such as FRD chip；There are three electrode, two of them electrodes to be located at same for triple-pole type chip
On one side, third electrode is located at another side, such as igbt chip.
Said chip subelement 4 according to packed semiconductor chip types include in parallel bipolar cake core subelement and
Three-level cake core subelement, bipolar cake core subelement and the respective specific number of three-level cake core subelement are by spring packaging knot
The current class of structure determines, guarantees the current class of bipolar cake core subelement and the current class phase of three-level cake core subelement
Deng, be not limited to Fig. 2 be 4 schematic layout pattern of chip subelement, the arrangement of bipolar cake core subelement and three-level cake core subelement
Mode is not limited to Fig. 2.
Bipolar cake core subelement therein includes the first pole C molybdenum sheet 15, bipolar cake core 16, the first pole E molybdenum sheet 17, the
One dished spring assembly 18 and first annular positioning framework 19；
First pole C molybdenum sheet, 15 upper surface is contacted with the base pressure of top electrode 1, both ends and first annular positioning framework 19
It is fixed；
The collector of bipolar cake core 16 and the lower surface of the first pole C molybdenum sheet 15 are fixed, emitter and the first pole E molybdenum sheet
The upper end of 17 upper surface pressure contact, the lower surface of the first pole E molybdenum sheet 17 and the first dished spring assembly 18 contacts with pressure, and described the
The lower end of one dished spring assembly 18 and the upper surface of lower electrode 2 contact with pressure.
18 number of bipolar cake core 16, the first 17 numbers of the pole E molybdenum sheet, the first dished spring assembly numbers are equal；Ambipolar core
The number of piece 16 is more than or equal to 1 and is less than or equal to 2.
Three-level cake core subelement includes the 2nd pole C molybdenum sheet 6, triple-pole type chip, the 2nd pole E molybdenum sheet 8, the second dished spring assembly
9, third dished spring assembly 14, the second circular orientation frame 12, bonding line 10,11 He of DBC (Direct Bond Copper) liner plate
Grid circuit plate 5；
The upper surface of 2nd pole C molybdenum sheet 6 is contacted with the base pressure of top electrode 1, both ends and the second circular orientation frame
12 is fixed；The collector of three-level cake core 7 and the lower surface of the 2nd pole C molybdenum sheet 6 are fixed, emitter and the 2nd pole E molybdenum sheet 8
Upper surface pressure contact, the lower surface of the 2nd pole E molybdenum sheet 8 and the upper end of the second dished spring assembly 9 contact with pressure, the second dished spring assembly
9 lower end and the upper surface of lower electrode 2 contact with pressure；
The upper surface of DBC liner plate 11 is connect with the bottom of the 2nd pole C molybdenum plate, and lower surface is upper with third dished spring assembly 14
End pressure contact, and lower surface connects the grid of three-level cake core 7 by bonding line 10；The lower end of third dished spring assembly 14 and grid
The upper surface of polar circuit plate 5 contacts with pressure, and the upper surface of the lower surface of grid circuit plate 5 and lower electrode 2 contacts with pressure.
9 number of triple-pole type chip, the 2nd 8 numbers of the pole E molybdenum sheet, the second dished spring assembly numbers are equal；Triple-pole type chip
Number is more than or equal to 1 and is less than or equal to 2.
Between bipolar cake core 16 and first annular positioning framework 19, triple-pole type chip and the second circular orientation frame 12 it
Between fill Silica hydrogel 13, improve the external insulation ability of bipolar 16/ three-level cake core 7 of cake core, prevent bipolar cake core 16/ 3
Sparking breakdown occurs for the terminal of grade cake core 7.
First annular positioning framework 19 and the second circular orientation frame 12 are all made of flame-retarded resin class modified plastics, can adopt
Pass through injection molding process, 12 main function of first annular positioning framework 19 and the second circular orientation frame with high temperature flame-proof nylon
For position components and high-voltage isulation.
Grid circuit plate 5 uses polyimides bottom plate, and its upper and lower surfaces covers copper, 5 cabling cloth of grid circuit plate
Office is according to the arrangement mode optimization design of chip subelement 4.
First pole C molybdenum sheet 15 is fixed by viscose glue and first annular positioning framework 19, and two pole C molybdenum sheets pass through viscose glue and second
Circular orientation frame 12 is fixed, and viscose glue prevents Silica hydrogel 13 from revealing from shell structure, glue in addition to being bonded also Packed effect
Glue ingredient is silicon rubber series, is resistant to 150 DEG C or more high temperature.
2nd pole E molybdenum sheet 8, the second dished spring assembly 9 are limited by the second circular orientation frame 12, the 2nd pole E molybdenum sheet
8, the center and 7 center of three-level cake core of both second dished spring assemblies 9 are consistent.Under normal use operating condition, the second disc spring
9 deflection of component is greater than 1mm, three-level cake core subelement whole height deviation is balanced by large deformation, so that each three-level type
Chip subelement is more uniformly stressed.
Pass through weldering between bipolar cake core 16 and the first pole C molybdenum sheet 15, between three-level cake core 7 and the 2nd pole C molybdenum sheet 6
It connects or sintering process is fixed, the positioning to bipolar 16/ three-level cake core 7 of cake core on the one hand can be achieved, on the other hand can drop
Low thermal contact resistance improves bipolar 16/ three-level cake core of cake core, 7 mechanical strength, prevents bipolar 16/ three-level cake core 7 of cake core
It is broken in a compressed state.
DBC liner plate 11 is that upper and lower surface covers the aluminium nitride liner plate of copper, the upper surface of DBC liner plate 11 and the 2nd pole C molybdenum plate it
Between be welded to connect or fixed by sintering process.
First dished spring assembly 18, the second dished spring assembly 9 and third dished spring assembly 14 have high current ducting capacity, have simultaneously
There is larger elastic deformation space.Three includes multiple disc springs, and multiple disc springs are combined in a manner of pairing.The quantity and model of disc spring
It is determined according to the area, deflection and pressure value of single semiconductor chip；
Deflection is more than or equal to 1mm and is less than or equal to 3mm, and pressure value is more than or equal to 800N and is less than or equal to 1000N.
First pole C molybdenum sheet 15, the 2nd pole C molybdenum sheet 6, the first pole E molybdenum sheet 17 and 8 material of the 2nd pole E molybdenum sheet are metal molybdenum,
Overlay coating processing plates ruthenium using entirety PVD, and single side PVD is silver-plated.Since the thermal expansion coefficient and silicon of metal molybdenum are close, molybdenum is selected
Abrasion of the temperature cycles to chip can be significantly reduced as chip two sides buffer metal layer.Molybdenum sheet can be improved in molybdenum sheet electroplate
Ruthenium is plated on solderability, surface, improves molybdenum sheet stability.
The different current classes of spring packaging structure provided in an embodiment of the present invention can by adjusting chip subelement 4 and
Join quantity to realize, in application to ensure to work normally, top electrode 1 and lower 2 two sides of electrode are both needed to radiator, and are applied certain
Pressure integral pressure is adjusted according to 4 quantity of parallel chip subelement.The spring packaging structural behaviour is stablized, and pressure is uniform,
Meet electrical limiting behaviour and reliability requirement.
Finally it should be noted that: the above embodiments are merely illustrative of the technical scheme of the present invention and are not intended to be limiting thereof, institute
The those of ordinary skill in category field can still modify to a specific embodiment of the invention referring to above-described embodiment or
Equivalent replacement, these are applying for this pending hair without departing from any modification of spirit and scope of the invention or equivalent replacement
Within bright claims.
Claims (17)
1. a kind of spring packaging structure for semiconductor chip, which is characterized in that including top electrode, lower electrode, annular encapsulation
Structure and multiple chip subelements；
The multiple chip subelement is set between the top electrode and lower electrode；
The annular packaging structure is sealed at the top electrode, lower electrode side, and constitutes with the top electrode, lower electrode
Closed shell structure.
2. the spring packaging structure according to claim 1 for semiconductor chip, which is characterized in that further include upper flange
And lower flange；
The top electrode is welded by upper flange and annular packaging structure, and the lower electrode passes through lower flange and annular packaging structure
Welding.
3. the spring packaging structure according to claim 2 for semiconductor chip, which is characterized in that the annular encapsulation
Structure is ceramic ring.
4. the spring packaging structure according to claim 3 for semiconductor chip, which is characterized in that the cross of the ceramic ring
Section is round, oval or rectangular.
5. the spring packaging structure according to claim 3 for semiconductor chip, which is characterized in that the spring packaging
Structure further includes limiter；
The limiter is located inside ceramic ring, and the inner wall of the outer wall fitting ceramic ring of the limiter.
6. the spring packaging structure according to claim 1 for semiconductor chip, which is characterized in that chip is single
Member includes bipolar cake core subelement and three-level cake core subelement in parallel.
7. the spring packaging structure according to claim 6 for semiconductor chip, which is characterized in that the ambipolar core
Piece subelement includes the first pole C molybdenum sheet, bipolar cake core, the first pole E molybdenum sheet, the first dished spring assembly and first annular posting
Frame；
First pole C molybdenum sheet upper surface is contacted with the base pressure of top electrode, and both ends are fixed with first annular positioning framework；
The collector of the bipolar cake core and the lower surface of the first pole C molybdenum sheet are fixed, and emitter is upper with the first pole E molybdenum sheet
Surface pressing contact, the lower surface of the first pole E molybdenum sheet and the upper end of the first dished spring assembly contact with pressure, first disc spring
The lower end of component and the upper surface of lower electrode contact with pressure.
8. the spring packaging structure according to claim 7 for semiconductor chip, which is characterized in that the ambipolar core
The number of piece, the first pole E molybdenum sheet number, the first dished spring assembly number are equal；
The number of the bipolar cake core is more than or equal to 1 and is less than or equal to 2.
9. the spring packaging structure according to claim 7 for semiconductor chip, which is characterized in that the three-level type core
Piece subelement includes the 2nd pole C molybdenum sheet, triple-pole type chip, the 2nd pole E molybdenum sheet, the second dished spring assembly, third dished spring assembly, second
Circular orientation frame, bonding line, DBC liner plate and grid circuit plate；
The upper surface of 2nd pole C molybdenum sheet is contacted with the base pressure of top electrode, and both ends and the second circular orientation frame are solid
It is fixed；The collector of the three-level cake core and the lower surface of the 2nd pole C molybdenum sheet are fixed, and emitter is upper with the 2nd pole E molybdenum sheet
Surface pressing contact, the lower surface of the 2nd pole E molybdenum sheet and the upper end of the second dished spring assembly contact with pressure, second disc spring
The lower end of component and the upper surface of lower electrode contact with pressure；
The upper surface of the DBC liner plate is connect with the bottom of the 2nd pole C molybdenum plate, the upper side pressure of lower surface and third dished spring assembly
Power contact, and lower surface connects the grid of three-level cake core by bonding line；The lower end of the third dished spring assembly and grid electricity
The upper surface of road plate contacts with pressure, and the upper surface of the lower surface of the grid circuit plate and lower electrode contacts with pressure.
10. the spring packaging structure according to claim 9 for semiconductor chip, which is characterized in that the triple-pole type
The number of chip, the 2nd pole E molybdenum sheet number, the second dished spring assembly number are equal；
The number of the triple-pole type chip is more than or equal to 1 and is less than or equal to 2.
11. the spring packaging structure according to claim 9 for semiconductor chip, which is characterized in that described ambipolar
Silica hydrogel is filled between chip and first annular positioning framework, between the triple-pole type chip and the second circular orientation frame.
12. the spring packaging structure according to claim 9 for semiconductor chip, which is characterized in that first ring
Shape positioning framework and the second circular orientation frame are all made of flame-retarded resin class modified plastics；
The grid circuit plate uses polyimides bottom plate, and its upper and lower surfaces covers copper.
13. the spring packaging structure according to claim 9 for semiconductor chip, which is characterized in that the first pole C molybdenum sheet
It is fixed by viscose glue and first annular positioning framework, two C pole molybdenum sheet is fixed by viscose glue and the second circular orientation frame；
Pass through welding between the bipolar cake core and the first pole C molybdenum sheet, between the three-level cake core and the 2nd pole C molybdenum sheet
Or sintering process is fixed；
It is welded to connect between the DBC liner plate and the 2nd pole C molybdenum plate or is fixed by sintering process.
14. the spring packaging structure according to claim 9 for semiconductor chip, which is characterized in that first dish
Spring component, the second dished spring assembly and third dished spring assembly include multiple disc springs, and multiple disc springs are combined in a manner of pairing.
15. the spring packaging structure according to claim 14 for semiconductor chip, which is characterized in that the disc spring
Quantity and model are determined according to the area, deflection and pressure value of single semiconductor chip；
The deflection is more than or equal to 1mm and is less than or equal to 3mm, and the pressure value is more than or equal to 800N and is less than or equal to 1000N.
16. the spring packaging structure according to claim 5 for semiconductor chip, which is characterized in that the limiter
Using SMC composite material, the upper end is fixed by screw or bonding with top electrode, and lower end and lower electrode keep pre-determined distance,
The pre-determined distance is equal to the decrement inside chip subelement under dished spring assembly working condition.
17. the spring packaging structure according to claim 6 for semiconductor chip, which is characterized in that described ambipolar
The number of chip subelement and three-level cake core subelement is determined by the current class of the spring packaging structure.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910519900.XA CN110379777A (en) | 2019-06-17 | 2019-06-17 | A kind of spring packaging structure for semiconductor chip |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910519900.XA CN110379777A (en) | 2019-06-17 | 2019-06-17 | A kind of spring packaging structure for semiconductor chip |
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| Publication Number | Publication Date |
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| CN110379777A true CN110379777A (en) | 2019-10-25 |
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| CN201910519900.XA Pending CN110379777A (en) | 2019-06-17 | 2019-06-17 | A kind of spring packaging structure for semiconductor chip |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112086420A (en) * | 2020-09-21 | 2020-12-15 | 南瑞联研半导体有限责任公司 | Elastic component for internal connection of power device |
| CN115621232A (en) * | 2022-11-10 | 2023-01-17 | 北京智慧能源研究院 | Power semiconductor device packaging structure and power semiconductor device module |
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2019
- 2019-06-17 CN CN201910519900.XA patent/CN110379777A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112086420A (en) * | 2020-09-21 | 2020-12-15 | 南瑞联研半导体有限责任公司 | Elastic component for internal connection of power device |
| CN115621232A (en) * | 2022-11-10 | 2023-01-17 | 北京智慧能源研究院 | Power semiconductor device packaging structure and power semiconductor device module |
| CN115621232B (en) * | 2022-11-10 | 2024-04-12 | 北京智慧能源研究院 | Power semiconductor device packaging structure and power semiconductor device module |
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