CN110370480A - The method of cutting silicon rod - Google Patents

The method of cutting silicon rod Download PDF

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Publication number
CN110370480A
CN110370480A CN201910672370.2A CN201910672370A CN110370480A CN 110370480 A CN110370480 A CN 110370480A CN 201910672370 A CN201910672370 A CN 201910672370A CN 110370480 A CN110370480 A CN 110370480A
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China
Prior art keywords
silicon rod
diamond wire
cutting
cutting fluid
cut
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Granted
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CN201910672370.2A
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Chinese (zh)
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CN110370480B (en
Inventor
卢健平
郑加镇
高海棠
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Zhonghuan Leading Xuzhou Semiconductor Materials Co ltd
Zhonghuan Advanced Semiconductor Materials Co Ltd
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Xuzhou Xinjing Semiconductor Technology Co Ltd
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Application filed by Xuzhou Xinjing Semiconductor Technology Co Ltd filed Critical Xuzhou Xinjing Semiconductor Technology Co Ltd
Priority to CN201910672370.2A priority Critical patent/CN110370480B/en
Publication of CN110370480A publication Critical patent/CN110370480A/en
Priority to US17/279,600 priority patent/US20220134600A1/en
Priority to PCT/CN2020/104070 priority patent/WO2021013238A1/en
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    • BPERFORMING OPERATIONS; TRANSPORTING
    • B28WORKING CEMENT, CLAY, OR STONE
    • B28DWORKING STONE OR STONE-LIKE MATERIALS
    • B28D5/00Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
    • B28D5/0058Accessories specially adapted for use with machines for fine working of gems, jewels, crystals, e.g. of semiconductor material
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B28WORKING CEMENT, CLAY, OR STONE
    • B28DWORKING STONE OR STONE-LIKE MATERIALS
    • B28D5/00Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
    • B28D5/0058Accessories specially adapted for use with machines for fine working of gems, jewels, crystals, e.g. of semiconductor material
    • B28D5/0076Accessories specially adapted for use with machines for fine working of gems, jewels, crystals, e.g. of semiconductor material for removing dust, e.g. by spraying liquids; for lubricating, cooling or cleaning tool or work
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B28WORKING CEMENT, CLAY, OR STONE
    • B28DWORKING STONE OR STONE-LIKE MATERIALS
    • B28D5/00Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
    • B28D5/04Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by tools other than rotary type, e.g. reciprocating tools
    • B28D5/045Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by tools other than rotary type, e.g. reciprocating tools by cutting with wires or closed-loop blades

Abstract

The invention discloses a kind of methods of cutting silicon rod, comprising: supplies cutting fluid to diamond wire using cooling tube, is cut using the diamond wire to the silicon rod, wherein the supply position of the cutting fluid is 10~20mm away from the silicon rod Edge Distance.The silicon wafer quality with higher that cutting obtains can be guaranteed using this method.

Description

The method of cutting silicon rod
Technical field
The invention belongs to crystal bars to cut field, specifically, the present invention relates to the methods of cutting silicon rod.
Background technique
Mortar multi-wire saw is to generate cutting power by carborundum powder and the mutual opposite grinding of silicon rod at present, so needing to control Process stream it is more a variety of and process time demand is long, and diamond multi-wire saw mode mainly will by diamond Silicon material on silicon rod excavates generation cutting power, can simplify process conditions and substantially shortens the process time of cutting, but technique The shortening of time also results in the unstability of cutting, and photovoltaic material is relatively low for the requirement of its flatness of flat column, so Diamond multi-wire saw can import completely and have no effect on yield, but semiconductor silicon rod be it is cylindric, can be with when cutting production Time, which generates significantly to change via cutting contact area, causes cutting stability worse, and causes the influence of yield, so The multi-wire saw of semiconductor silicon rod imports diamond multi-line cutting process and needs further Improvement.
Summary of the invention
The present invention is directed to solve at least some of the technical problems in related technologies.For this purpose, of the invention One purpose is a kind of method for proposing cutting silicon rod, and the silicon wafer that can guarantee that cutting obtains using this method is with higher Quality.
In one aspect of the invention, the invention proposes a kind of methods of cutting silicon rod.According to an embodiment of the invention, The described method includes: supplying cutting fluid to diamond wire using cooling tube, the silicon rod is cut using the diamond wire It cuts, wherein the supply position of the cutting fluid is 10~20mm away from the silicon rod Edge Distance.
The method of cutting silicon rod according to an embodiment of the present invention supplies the supply of cutting fluid by cooling tube to diamond wire The position i.e. contact position of supply cutting fluid and diamond wire is 10~20mm away from silicon rod Edge Distance, guarantees cutting fluid and cuts Silicon wafer contact area is maximum, diamond wire when effectively avoiding cutting caused by formation ocean current phenomenon between diamond wire and silicon rod Be swung left and right, thus reduce cutting silicon wafer TTV or angularity, improve cutting silicon wafer quality.
In addition, the method for cutting silicon rod according to the above embodiment of the present invention can also have following additional technology special Sign:
In some embodiments of the invention, cutting fluid is supplied to the diamond wire using two cooling tubes.By This, can be improved the quality of cutting silicon wafer.
In some embodiments of the invention, described two cooling tubes are arranged symmetrically relative to the silicon rod.Thus, it is possible to Improve the quality of cutting silicon wafer.
In some embodiments of the invention, the cooling tube is equipped with flow control valve.
In some embodiments of the invention, the cooling tube is equipped with bearing assembly, described in the bearing assembly is fixed Cooling tube.
In some embodiments of the invention, institute is supplied to the diamond wire by the way that nozzle is arranged on the cooling tube Cutting fluid is stated, during the cutting process, passes through the flow of the Jet control cutting fluid, wherein the cutting of the diamond wire is deep When degree is lower than the 1/4 of the silicon rod diameter, when preferably shorter than 1/8, the flow of the cutting fluid is 25~30L/min;The gold When the depth of cut of hard rock line is greater than the 3/4 of the silicon rod diameter, when preferably greater than 7/8, the flow of the cutting fluid is 25~ 30L/min;It is described when preferably 1/8~7/8 when the depth of cut of the diamond wire is the 1/4~3/4 of the silicon rod diameter The flow of cutting fluid is 20~25L/min.Thus, it is possible to guarantee the quality of cutting silicon wafer.
In some embodiments of the invention, the cooling tube exit be arranged deflector, the one of the deflector End is connected with the cooling tube exit, and the other end of the deflector is located at the supply position of the cutting fluid, is cutting Cheng Zhong controls the flow of cutting fluid by the deflector, in which: the depth of cut of the diamond wire is straight lower than the silicon rod Diameter 1/4 when, when preferably shorter than 1/8, the flow of the cutting fluid is 100~120L/min;The cutting of the diamond wire is deep When degree is greater than the 3/4 of the silicon rod diameter, when preferably greater than 7/8, the flow of the cutting fluid is 100~120L/min;It is described When the depth of cut of diamond wire is the 1/4~3/4 of the silicon rod diameter, when preferably 1/8~7/8, the flow of the cutting fluid For 50~70L/min.Thus, it is possible to guarantee the quality of cutting silicon wafer.
In some embodiments of the invention, the bearing support is the adjustment component that can be moved forward and backward up and down, passes through tune The sprinkling position of the angle control cutting fluid of the whole adjustment component.
In some embodiments of the invention, the angle of the adjustment component adjusts according to the following formula:
Wherein, θ is to adjust the angle, and unit is degree, and y is between two cooling tubes Distance, unit mm, Z are cooling tube and spool motor height, and unit mm, R are silicon rod diameter, and unit mm, x are diamond The depth of cut of line, unit mm.
In some embodiments of the invention, the cutting fluid is water.Thus, it is possible to while raising equipment cleaning is spent Guarantee the quality of cutting silicon wafer.
In some embodiments of the invention, it is supplied by the cooling tube to the diamond wire using automatic water-replenishing device Water supply.Thus, it is possible to guarantee the quality of cutting silicon wafer.
In some embodiments of the invention, the tension of diamond wire described in the cutting process is 23~25N, described Diamond wire spool motor linear velocity is 700~1500m/min, 0.6~1.2mm/min of cutting speed.
Additional aspect and advantage of the invention will be set forth in part in the description, and will partially become from the following description Obviously, or practice through the invention is recognized.
Detailed description of the invention
Above-mentioned and/or additional aspect of the invention and advantage will become from the description of the embodiment in conjunction with the following figures Obviously and it is readily appreciated that, in which:
Fig. 1 is the method process structure diagram of cutting silicon rod according to an embodiment of the invention;
Fig. 2 is the method process structure diagram of the cutting silicon rod of further embodiment according to the present invention;
Fig. 3 is the method process structure diagram of the cutting silicon rod of another embodiment according to the present invention;
Fig. 4 is the method process structure diagram of the cutting silicon rod of another embodiment according to the present invention;
Fig. 5 is the method process structure diagram of the cutting silicon rod of another embodiment according to the present invention;
Fig. 6 is the method process structure diagram of the cutting silicon rod of another embodiment according to the present invention.
Specific embodiment
The embodiment of the present invention is described below in detail, examples of the embodiments are shown in the accompanying drawings, wherein from beginning to end Same or similar label indicates same or similar element or element with the same or similar functions.Below with reference to attached The embodiment of figure description is exemplary, it is intended to is used to explain the present invention, and is not considered as limiting the invention.
In the present invention unless specifically defined or limited otherwise, term " installation ", " connected ", " connection ", " fixation " etc. Term shall be understood in a broad sense, for example, it may be being fixedly connected, may be a detachable connection, or integral;It can be mechanical connect It connects, is also possible to be electrically connected;It can be directly connected, can also can be in two elements indirectly connected through an intermediary The interaction relationship of the connection in portion or two elements, unless otherwise restricted clearly.For those of ordinary skill in the art For, the specific meanings of the above terms in the present invention can be understood according to specific conditions.
In the present invention unless specifically defined or limited otherwise, fisrt feature in the second feature " on " or " down " can be with It is that the first and second features directly contact or the first and second features pass through intermediary mediate contact.Moreover, fisrt feature exists Second feature " on ", " top " and " above " but fisrt feature be directly above or diagonally above the second feature, or be merely representative of First feature horizontal height is higher than second feature.Fisrt feature can be under the second feature " below ", " below " and " below " One feature is directly under or diagonally below the second feature, or is merely representative of first feature horizontal height less than second feature.
In one aspect of the invention, the invention proposes a kind of methods of cutting silicon rod.According to an embodiment of the invention, This method comprises: supplying cutting fluid to diamond wire using cooling tube, silicon rod is cut using diamond wire, wherein institute It is 10~20mm that the supply position of cutting fluid, which is stated, away from the silicon rod Edge Distance.
In the step, silicon rod to be cut is fixed on board, it should be noted that the process is that this field is routinely grasped Make, details are not described herein again, then supplies cutting fluid to diamond wire using cooling tube, is cut using diamond wire to silicon rod Cut, wherein the supply position of cutting fluid away from silicon rod Edge Distance be 10~20mm, such as 10mm, 11mm, 12mm, 13mm, 14mm, 15mm, 16mm, 17mm, 18mm, 19mm and 20mm.Inventors have found that supplying cutting fluid to diamond wire by cooling tube Supply position be that supply the contact position of cutting fluid and diamond wire away from silicon rod Edge Distance be 10~20mm, guarantee cutting fluid It is maximum with cutting silicon wafer contact area, gold when effectively avoiding cutting caused by formation ocean current phenomenon between diamond wire and silicon rod Hard rock line is swung left and right, to reduce the TTV or angularity of cutting silicon wafer, improves the quality of cutting silicon wafer.
Further, cutting fluid is supplied to diamond wire using two cooling tubes, preferably two cooling tubes are relative to silicon rod It is arranged symmetrically.Cutting fluid is supplied from two side of silicon rod to cutting silicon rod simultaneously by two cooling tubes of setting as a result, improves cutting silicon The quality of piece.
Specifically, diamond wire 2 is driven to run back and forth by two spool motors 1 and cut to silicon rod 3 with reference to Fig. 1 It cuts, the tension of diamond wire maintains 23~25N, such as 23N, 24N and 25N in cutting process, and spool motor maintains linear velocity For 700~1500m/min, such as 700m/min, 800m/min, 900m/min, 1000m/min, 1100m/min, 1200m/ Min, 1300m/min, 1400m/min and 1500m/min, 0.6~1.2mm/min of cutting speed, such as 0.6mm/min, 0.7mm/min, 0.8mm/min, 0.9mm/min, 1.0mm/min, 1.1mm/min and 1.2mm/min.It and is being cooling tube 4 (bearing support 5 can be any component that fixed function may be implemented in the prior art, this field to upper setting bearing support 5 Technical staff can select according to actual needs), which can fix cooling tube 4, so that cooling tube 4 Edge of the supply position of middle cutting fluid when silicon rod 3 cuts to maximum area.Simultaneously inventors have found that because of cutting fluid adhesion It is very low, chip removal effect is formed inside silicon rod so need to be easier to be brought by diamond wire apart from the closer distance of silicon rod, and need Cooperate the cutting fluid of appropriate flow to be cut, and excessive cutting fluid be easy to cause liquid reunite silicon rod edge formation disturb Stream, beat when diamond wire being caused to rapidly enter silicon rod.The application supplies cutting fluid to diamond wire by cooling tube as a result, Supply position contact position away from silicon rod Edge Distance be 10~20mm, guarantee cutting fluid and cutting silicon wafer contact area most Greatly, it effectively avoids being formed diamond wire when cutting caused by ocean current phenomenon between diamond wire and silicon rod to be swung left and right, from And the TTV or angularity of cutting silicon wafer are reduced, improve the quality of cutting silicon wafer.
In another aspect of the invention, above-mentioned bearing support 5 is the adjustment component that can be moved forward and backward up and down, by adjusting The sprinkling position of the angle control cutting fluid of component is adjusted, to guarantee that the supply position of cutting fluid away from silicon rod Edge Distance is 10 ~20mm.Specifically, the angle adjustment of the adjustment component can be as follows with reference to Fig. 2:θ is to adjust the angle, and y is distance mm between two cooling tubes, and Z is cooling tube and spool Motor height mm, R are silicon rod diameter mm, and x is the depth of cut mm of diamond wire.It should be noted that herein " diamond wire For depth of cut " it is to be understood that along cut direction, diamond wire 2 enters the depth in silicon rod 3.
It should be noted that " cutting fluid supply position " P herein can be understood as spraying from cooling tube 4 with reference to Fig. 3 The position that is contacted with diamond wire 2 of cutting fluid.
Further, in cooling tube cutting fluid supply to diamond wire can using sprinkling and/or water conservancy diversion by the way of.
Such as with reference to Fig. 4, use spray pattern for nozzle 6 is arranged on two cooling tubes 4, inventors have found that spraying In the process, cutting flow quantity is bigger, and impact force is stronger, and the position of sprinkling is remoter, therefore just by adjusting the flow of cutting fluid The supply position of cutting fluid be can achieve from 10~20mm of silicon rod edge.Specifically, with reference to Fig. 4, by two cooling tubes 4 Equipped with flow control valve 7, in cutting process, when the depth of cut of diamond wire is lower than the 1/4 of silicon rod diameter, preferably shorter than It is 25~30L/min by the flow that flow control valve 7 adjusts cutting fluid, such as the flow of adjustment cutting fluid is 25L/ when 1/8 The supply position p of cutting fluid can be realized from silicon rod 3 in min, 26L/min, 27L/min, 28L/min, 29L/min and 30L/min Edge length H1 is 10~20mm;And when the depth of cut of diamond wire is the 1/4~3/4 of silicon rod diameter, preferably 1/8~7/ When 8, by flow control valve 7 adjust cutting fluid flow be 20~25L/min, such as 20L/min, 21L/min, 22L/min, 23L/min, 24L/min and 25L/min, it is 10~20mm that the supply position of cutting fluid, which can be realized, from silicon rod edge length H1; When the depth of cut of diamond wire is greater than the 3/4 of silicon rod diameter, when preferably greater than 7/8, pass through the adjustment cutting of flow control valve 7 The flow of liquid be 25~30L/min, such as adjustment cutting fluid flow be 25L/min, 26L/min, 27L/min, 28L/min, 29L/min and 30L/min, it is 10~20mm that the supply position of cutting fluid, which can be realized, from silicon rod edge length H1, is effectively avoided It forms caused by ocean current phenomenon diamond wire when cutting between diamond wire and silicon rod to be swung left and right, to reduce cutting silicon The TTV or angularity of piece improve the quality of cutting silicon wafer.
Such as with reference to Fig. 5, use diversion mode to be arranged deflectors 8 in two 4 exits of cooling tube, the one of deflector 8 End is connected with 4 exit of cooling tube, and the other end of deflector 8 is located at the supply position P of cutting fluid, similarly, during water conservancy diversion, Cutting flow quantity is bigger, and impact force is stronger, and the position of sprinkling is remoter, therefore can reach by adjusting the flow of cutting fluid The supply position of cutting fluid is 10~20mm from silicon rod edge length H1.With reference to Fig. 5, by being equipped with stream on two cooling tubes 4 Adjustable valve 7, in cutting process, when the depth of cut of diamond wire is lower than the 1/4 of silicon rod diameter, when preferably shorter than 1/8, It is 100~120L/min by the flow that flow control valve 7 adjusts cutting fluid, such as the flow of adjustment cutting fluid is 100L/ min、101L/min、102L/min、103L/min、104L/min、105L/min、106L/min、107L/min、108L/min、 109L/min、110L/min、111L/min、112L/min、113L/min、114L/min、115L/min、116L/min、117L/ Min, 118L/min, 119L/min and 120L/min, it is 10 that the supply position of cutting fluid, which can be realized, from silicon rod edge length H1 ~20mm;And when the depth of cut of diamond wire is the 1/4~3/4 of silicon rod diameter, when preferably 1/8~7/8, pass through flow tune Saving valve 7 and adjusting the flow of cutting fluid is 50~70L/min, such as 50L/min, 51L/min, 52L/min, 53L/min, 54L/ min、55L/min、56L/min、57L/min、58L/min、59L/min、60L/min、61L/min、62L/min、63L/min、 The supply of cutting fluid can be realized in 64L/min, 65L/min, 66L/min, 67L/min, 68L/min, 69L/min and 70L/min Position is 10~20mm from silicon rod edge length H1;When the depth of cut of diamond wire is greater than the 3/4 of silicon rod diameter, preferably greatly It is 100~120L/min by the flow that flow control valve 7 adjusts cutting fluid when 7/8, such as the flow of adjustment cutting fluid is 100L/min、101L/min、102L/min、103L/min、104L/min、105L/min、106L/min、107L/min、108L/ min、109L/min、110L/min、111L/min、112L/min、113L/min、114L/min、115L/min、116L/min、 117L/min, 118L/min, 119L/min and 120L/min, can be realized the supply position of cutting fluid from silicon rod edge 10~ 20mm effectively avoids being formed diamond wire when cutting caused by ocean current phenomenon between diamond wire and silicon rod and is swung left and right, To reduce the TTV or angularity of cutting silicon wafer, the quality of cutting silicon wafer is improved.
Further, above-mentioned cutting fluid is water.Inventors have found that by using water as cutting fluid and coolant liquid, and Water after cutting supplies always fresh water as cutting fluid and coolant liquid, on the one hand, can guarantee to cut without being recycled Liquid is cut with stable temperature and cleanliness, effectively avoids cutting fluid concentration liter caused by using cutting fluid to be recycled at present It is high and the problem of reduce the cutting efficiency of silicon rod, and without being both needed to carry out clearly board Cutting Room after every crystal bar cut It is clean, while being effectively improved cutting fluid and being recycled and residual silicon powder is caused to adhere to asking for the stability on hardware and influencing hardware Topic extends service life of equipment, assists liquid to cool down cutting fluid after filtering in another aspect, not having to addition circulating cooling, Processing cost is reduced, on the other hand, the cutting fluid ingredient after direct emission is silicon powder, diamond and water, and it is useless to significantly simplify factory service Water process process.
Further, it with reference to Fig. 6, can be supplied by two cooling tubes 4 to diamond wire 2 using automatic water-replenishing device 9 Water.Specifically, the water inlet end of cooling tube 4 is connected with automatic water-replenishing device 9, and it is equipped with liquid level in automatic water-replenishing device 9 and perceives Device or float-ball type valve group, the liquid level in real-time detection automatic water-replenishing device 9, and the water being replenished in time in automatic water-replenishing device 9 Amount, to guarantee the continuous supply of water in cooling tube 4.
Below with reference to specific embodiment, present invention is described, it should be noted that these embodiments are only to describe Property, without limiting the invention in any way.
Embodiment 1
(1) silicon rod to be cut is fixed on board;
(2) two cooling tubes be all made of spray pattern to diamond wire supply cutting fluid, using diamond wire to silicon rod into Row cutting, wherein when the depth of cut of diamond wire is lower than the 1/4 of silicon rod diameter, cutting fluid is adjusted by flow control valve Flow be 25L/min, realize that the supply position of cutting fluid from silicon rod edge length H1 is 16mm;And work as the cutting of diamond wire When depth is the 1/4~3/4 of silicon rod diameter, it is 20L/min by the flow that flow control valve adjusts cutting fluid, realizes cutting fluid Supply position from silicon rod edge length H1 be 16mm;When the depth of cut of diamond wire is greater than the 3/4 of silicon rod diameter, pass through The flow that flow control valve adjusts cutting fluid is 25L/min, realizes that the supply position of cutting fluid is from silicon rod edge length H1 16mm, meanwhile, the tension of diamond wire maintains 23N in cutting process, and it is 700m/min, cutting that spool motor, which maintains linear velocity, Speed 0.6mm/min.
Embodiment 2
(1) silicon rod to be cut is fixed on board;
(2) two cooling tubes be all made of spray pattern to diamond wire supply cutting fluid, using diamond wire to silicon rod into Row cutting, wherein when the depth of cut of diamond wire is lower than the 1/8 of silicon rod diameter, cutting fluid is adjusted by flow control valve Flow be 28L/min, realize that the supply position of cutting fluid from silicon rod edge length H1 is 16mm;And work as the cutting of diamond wire When depth is the 1/8~7/8 of silicon rod diameter, it is 25L/min by the flow that flow control valve adjusts cutting fluid, realizes cutting fluid Supply position from silicon rod edge length H1 be 18mm;When the depth of cut of diamond wire is greater than the 7/8 of silicon rod diameter, pass through The flow that flow control valve adjusts cutting fluid is 28L/min, realizes that the supply position of cutting fluid is from silicon rod edge length H1 16mm, meanwhile, the tension of diamond wire maintains 24N in cutting process, and it is 800m/min, cutting that spool motor, which maintains linear velocity, Speed 0.8mm/min.
Embodiment 3
(1) silicon rod to be cut is fixed on board;
(2) two cooling tubes are all made of spray pattern and supply water to diamond wire, are cut using diamond wire to silicon rod It cuts, wherein when the depth of cut of diamond wire is lower than the 3/16 of silicon rod diameter, be by the flow that flow control valve adjusts water 29L/min realizes that the supply position of water from silicon rod edge length H1 is 17mm;And when the depth of cut of diamond wire is that silicon rod is straight Diameter 3/16~13/16 when, by flow control valve adjust water flow be 24L/min, realize the supply position of water from silicon rod Edge length H1 is 17mm;When the depth of cut of diamond wire is greater than the 13/16 of silicon rod diameter, adjusted by flow control valve The flow of water is 30L/min, realizes that the supply position of water from silicon rod edge length H1 is 17mm, meanwhile, Buddha's warrior attendant in cutting process The tension of stone line maintains 25N, and it is 1000m/min, cutting speed 1.2mm/min that spool motor, which maintains linear velocity,.
Embodiment 4
(1) silicon rod to be cut is fixed on board;
(3) two cooling tubes are all made of deflector diversion mode and supply cutting fluid to diamond wire, using diamond wire pair Silicon rod is cut, wherein in cutting process, when the depth of cut of diamond wire is lower than the 1/8 of silicon rod diameter, passes through stream The flow that adjustable valve adjusts cutting fluid is 100L/min, realizes that the supply position of cutting fluid is from silicon rod edge length H1 15mm;And when the depth of cut of diamond wire is the 1/8~7/8 of silicon rod diameter, cutting fluid is adjusted by flow control valve Flow is 50L/min, realizes that the supply position of cutting fluid from silicon rod edge length H1 is 15mm;When the depth of cut of diamond wire Greater than silicon rod diameter 7/8 when, by flow control valve adjust cutting fluid flow be 100L/min, realize the supply of cutting fluid Position is 15mm from silicon rod edge length H1, meanwhile, the tension of diamond wire maintains 24N, spool motor dimension in cutting process Holding linear velocity is 1300m/min, cutting speed 0.9mm/min.
Embodiment 5
(1) silicon rod to be cut is fixed on board;
(2) two cooling tubes are all made of deflector diversion mode and supply cutting fluid to diamond wire, using diamond wire pair Silicon rod is cut, wherein in cutting process, when the depth of cut of diamond wire is lower than the 1/4 of silicon rod diameter, passes through stream The flow that adjustable valve adjusts cutting fluid is 110L/min, realizes that the supply position of cutting fluid is from silicon rod edge length H1 19mm;And when the depth of cut of diamond wire is the 1/4~3/4 of silicon rod diameter, cutting fluid is adjusted by flow control valve Flow is 60L/min, realizes that the supply position of cutting fluid from silicon rod edge length H1 is 19mm;When the depth of cut of diamond wire Greater than silicon rod diameter 3/4 when, by flow control valve adjust cutting fluid flow be 110L/min, realize the supply of cutting fluid Position is 19mm from silicon rod edge length H1, meanwhile, the tension of diamond wire maintains 24N, spool motor dimension in cutting process Holding linear velocity is 1100m/min, cutting speed 0.6mm/min.
Embodiment 6
(1) silicon rod to be cut is fixed on board;
(2) two cooling tubes are all made of deflector diversion mode and supply water to diamond wire, using diamond wire to silicon rod It is cut, wherein in cutting process, when the depth of cut of diamond wire is lower than the 3/16 of silicon rod diameter, pass through flow The flow that regulating valve adjusts water is 120L/min, realizes that the supply position of water from silicon rod edge length H1 is 19mm;And work as Buddha's warrior attendant It is 70L/min by the flow that flow control valve adjusts water when the depth of cut of stone line is the 3/16~13/16 of silicon rod diameter, The supply position of realization water is 19mm from silicon rod edge length H1;When the depth of cut of diamond wire is greater than the 13/ of silicon rod diameter When 16, the flow that water is adjusted by flow control valve is 120L/min, realizes that the supply position of water is from silicon rod edge length H1 19mm, meanwhile, the tension of diamond wire maintains 25N in cutting process, and it is 1200m/min that spool motor, which maintains linear velocity, cuts Cut speed 0.7mm/min.
Embodiment 7
(1) silicon rod to be cut is fixed on board;
(2) water is supplied to diamond wire using nozzles spray mode, silicon rod is cut using diamond wire, wherein The flow for keeping cutting fluid is 25L/min.Using the fixed cooling tube of the adjustment component that can be moved forward and backward up and down, adjusted by control The angle of component, so that cutting fluid is 15mm apart from silicon rod edge H1.Meanwhile the tension of diamond wire maintains in cutting process 24N, it is 750m/min, cutting speed 0.8mm/min that spool motor, which maintains linear velocity,.
Embodiment 8
(1) silicon rod to be cut is fixed on board;
(2) cutting fluid is supplied to diamond wire using deflector diversion mode, silicon rod is cut using diamond wire, Wherein, the flow for keeping cutting fluid is 70L/min.Using the fixed cooling tube of the adjustment component that can be moved forward and backward up and down, pass through control The angle of system adjustment component, so that cutting fluid is 18mm apart from silicon rod edge H1.Meanwhile in cutting process diamond wire tension 25N is maintained, it is 850m/min, cutting speed 1.0mm/min that spool motor, which maintains linear velocity,.
Comparative example
(1) silicon rod to be cut is fixed on board;
(2) cutting fluid Synergy DWS 260 is supplied to diamond wire using using spray pattern, using diamond wire pair Silicon rod is cut, wherein in cutting process, keeping the flow of cutting fluid is 25L/min.Meanwhile Buddha's warrior attendant in cutting process The tension of stone line maintains 24N, and it is 1000m/min, cutting speed 1.0mm/min that spool motor, which maintains linear velocity,.
Evaluation:
1, (silicon chip surface is relative to back side desired reference by the TTV of the silicon wafer obtained respectively to the method using embodiment 1-8 Maximum gauge when plane and minimum thickness difference) and angularity (the opposite highest point with the back side plane of reference of silicon wafer median surface with The variation range of minimum point) it is tested.
2, test method:
TTV test method: GB/T29507-2013 evenness of silicon wafer, thickness and total thickness variations test automatically non-contact sweep Retouch method.
Angularity test method: GB/T32280-2015 silicon warp degree tests automatic non-contact scanning method.
Test result such as table 1.
The TTV and angularity for the silicon wafer that the method for 1 embodiment 1-8 of table and comparative example obtains
TTV(μm) Angularity (μm)
Embodiment 1 8~13 9~15
Embodiment 2 10~14 10~15
Embodiment 3 9~15 11~16
Embodiment 4 10~16 10~17
Embodiment 5 11~17 10~18
Embodiment 6 13~20 11~17
Embodiment 7 8~11 9~17
Embodiment 8 12~19 11~18
Comparative example 10~57 11~45
In the description of this specification, reference term " one embodiment ", " some embodiments ", " example ", " specifically show The description of example " or " some examples " etc. means specific features, structure, material or spy described in conjunction with this embodiment or example Point is included at least one embodiment or example of the invention.In the present specification, schematic expression of the above terms are not It must be directed to identical embodiment or example.Moreover, particular features, structures, materials, or characteristics described can be in office It can be combined in any suitable manner in one or more embodiment or examples.In addition, without conflicting with each other, the skill of this field Art personnel can tie the feature of different embodiments or examples described in this specification and different embodiments or examples It closes and combines.
Although the embodiments of the present invention has been shown and described above, it is to be understood that above-described embodiment is example Property, it is not considered as limiting the invention, those skilled in the art within the scope of the invention can be to above-mentioned Embodiment is changed, modifies, replacement and variant.

Claims (12)

1. a kind of method of cutting silicon rod characterized by comprising
Cutting fluid is supplied to diamond wire using cooling tube, silicon rod is cut using the diamond wire,
Wherein, the supply position of the cutting fluid is 10~20mm away from the silicon rod Edge Distance.
2. the method according to claim 1, wherein being supplied using two cooling tubes to the diamond wire Cutting fluid.
3. according to the method described in claim 2, it is characterized in that, described two cooling tubes are relative to the symmetrical cloth of the silicon rod It sets.
4. according to the method described in claim 2, it is characterized in that, the cooling tube is equipped with flow control valve.
5. according to the method described in claim 2, it is characterized in that, the cooling tube is equipped with bearing support, the carrying branch The fixed cooling tube of frame.
6. method according to claims 1 to 4, which is characterized in that by the way that nozzle is arranged on the cooling tube to described Diamond wire supplies the cutting fluid and passes through the flow of the Jet control cutting fluid during the cutting process, in which:
When the depth of cut of the diamond wire is lower than the 1/4 of the silicon rod diameter, when preferably shorter than 1/8, the cutting fluid Flow is 25~30L/min;
When the depth of cut of the diamond wire is greater than the 3/4 of the silicon rod diameter, when preferably greater than 7/8, the cutting fluid Flow is 25~30L/min;
When the depth of cut of the diamond wire is the 1/4~3/4 of the silicon rod diameter, the flow of the cutting fluid is 20~ 25L/min。
7. method according to claims 1 to 4, which is characterized in that deflector, institute is arranged in the exit of the cooling tube The one end for stating deflector is connected with the cooling tube exit, and the other end of the deflector is located at the supply position of the cutting fluid It sets, during the cutting process, the flow of cutting fluid is controlled by the deflector, in which:
When the depth of cut of the diamond wire is lower than the 1/4 of the silicon rod diameter, when preferably shorter than 1/8, the cutting fluid Flow is 100~120L/min;
When the depth of cut of the diamond wire is greater than the 3/4 of the silicon rod diameter, when preferably greater than 7/8, the cutting fluid Flow is 100~120L/min;
It is described to cut when preferably 1/8~7/8 when the depth of cut of the diamond wire is the 1/4~3/4 of the silicon rod diameter The flow for cutting liquid is 50~70L/min.
8. according to the method described in claim 5, it is characterized in that, the bearing support is the adjustment group that can be moved forward and backward up and down Part, by adjusting the sprinkling position of the angle control cutting fluid of the adjustment component.
9. according to the method described in claim 8, it is characterized in that, the angle of the adjustment component adjusts according to the following formula:
Wherein, θ is to adjust the angle, and unit is degree, and y is distance between two cooling tubes, and unit mm, Z are cooling tube and spool Motor height, unit mm, R are silicon rod diameter, and unit mm, x are the depth of cut of diamond wire, unit mm.
10. the method according to claim 1, wherein the cutting fluid is water.
11. according to the method described in claim 10, it is characterized in that, passing through the cooling tube to institute using automatic water-replenishing device State diamond wire supply water.
12. the method according to claim 1, wherein the tension of diamond wire described in the cutting process is 23~25N, the diamond wire spool motor linear velocity are 700~1500m/min, 0.6~1.2mm/min of cutting speed.
CN201910672370.2A 2019-07-24 2019-07-24 Method for cutting silicon rod Active CN110370480B (en)

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CN201910672370.2A CN110370480B (en) 2019-07-24 2019-07-24 Method for cutting silicon rod
US17/279,600 US20220134600A1 (en) 2019-07-24 2020-07-24 Method for cutting silicon rod and apparatus for dimaond multi-wire cutting
PCT/CN2020/104070 WO2021013238A1 (en) 2019-07-24 2020-07-24 Method for cutting silicon rod and diamond multi-wire cutting device

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Publication number Priority date Publication date Assignee Title
WO2021013238A1 (en) * 2019-07-24 2021-01-28 徐州鑫晶半导体科技有限公司 Method for cutting silicon rod and diamond multi-wire cutting device
CN113601741A (en) * 2021-08-09 2021-11-05 西安奕斯伟硅片技术有限公司 Device for supplying mortar to a plurality of cutting lines for cutting silicon rods and silicon rod cutting apparatus
CN113799277A (en) * 2021-08-10 2021-12-17 威科赛乐微电子股份有限公司 Multi-line cutting method for crystal
CN113799277B (en) * 2021-08-10 2024-04-19 威科赛乐微电子股份有限公司 Crystal multi-line cutting method

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CN207535114U (en) * 2017-12-01 2018-06-26 江西福璟新能源科技有限公司 A kind of silicon rod slicing device
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CN203409906U (en) * 2013-08-07 2014-01-29 晶伟电子材料有限公司 Cutting fluid circulating and guiding device for multi-wire cutting machine
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Publication number Priority date Publication date Assignee Title
WO2021013238A1 (en) * 2019-07-24 2021-01-28 徐州鑫晶半导体科技有限公司 Method for cutting silicon rod and diamond multi-wire cutting device
CN113601741A (en) * 2021-08-09 2021-11-05 西安奕斯伟硅片技术有限公司 Device for supplying mortar to a plurality of cutting lines for cutting silicon rods and silicon rod cutting apparatus
CN113799277A (en) * 2021-08-10 2021-12-17 威科赛乐微电子股份有限公司 Multi-line cutting method for crystal
CN113799277B (en) * 2021-08-10 2024-04-19 威科赛乐微电子股份有限公司 Crystal multi-line cutting method

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