CN110349886A - Large-area perovskite solar cell preparation device and preparation method - Google Patents

Large-area perovskite solar cell preparation device and preparation method Download PDF

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CN110349886A
CN110349886A CN201910529572.1A CN201910529572A CN110349886A CN 110349886 A CN110349886 A CN 110349886A CN 201910529572 A CN201910529572 A CN 201910529572A CN 110349886 A CN110349886 A CN 110349886A
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module
perovskite
solar cell
cavity
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CN110349886B (en
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丁建宁
袁宁一
王书博
程广贵
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Jiangsu University
Yangzhou University
Changzhou University
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
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    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/40—Thermal treatment, e.g. annealing in the presence of a solvent vapour
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/40—Thermal treatment, e.g. annealing in the presence of a solvent vapour
    • H10K71/421—Thermal treatment, e.g. annealing in the presence of a solvent vapour using coherent electromagnetic radiation, e.g. laser annealing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/811—Controlling the atmosphere during processing
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

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Abstract

The invention provides a preparation device and a preparation method of a large-area perovskite solar cell, wherein the device sequentially comprises the following components: FTO marking off P1 module, electron transport layer coating module, infrared radiation module, electron transport layer cooling module, perovskite precursor solution slit coating module, perovskite wet film vacuum distillation module, compound light wave annealing module, perovskite layer cooling module, hole transport layer coating module, hole layer weathers module, machinery marking off P2 module, electrode evaporation module and machinery marking off P3 module, wherein, perovskite wet film vacuum distillation module includes: the solar cell comprises a cavity, a first transfer door, a second transfer door, a pneumatic piston and a plurality of groups of booster pump devices connected in parallel, wherein the first transfer door and the second transfer door are respectively arranged on two sides of the cavity and used for an FTO glass carrier to pass through, the pneumatic piston is hermetically connected with the cavity, and the plurality of groups of booster pump devices connected in parallel are communicated with the cavity.

Description

A kind of large area perovskite solar cell preparation facilities and preparation method
Technical field
The present invention relates to solar cell technology preparation field more particularly to a kind of large area perovskite solar cell preparation dresses It sets and preparation method.
Background technique
10 year of photoelectric conversion efficiency of perovskite solar cell rises to 24.2% from 3.8%, has industry The value of change, still, the preparation method of most of perovskite solar cell, especially photoelectric conversion efficiency are more than in current experiment 20% perovskite solar cell preparation method is mostly a step anti-solvent method, two step spin-coating methods etc., however spin-coating method be can not be real Existing large area production.The preparation method of some large area perovskites, such as CVD method, slot coated method, knife coating, Solution extrusion Method etc. is developed, although these methods, which can be realized large area, prepares perovskite thin film, film quality still is below rotation Coating, such as the controllable precise requirement that CVD method grows film are very high, and the coating class method based on solution, wet film can not The use anti-solvent of large area promotes crystallization, therefore, lacks the method that can be mass-produced and corresponding equipment at present.
The prior art provides a kind of applied to preparing the blade coating equipment of perovskite battery and preparing the method for film, can use In the film or layer structure of preparation large area；The prior art additionally provides a kind of flexible large area calcium titanium based on roller coating technology The preparation method of mine solar cell realizes the preparation of flexible large area perovskite solar cell by adjusting roller coating technology；So And above two preparation method is not referred to for how coating handles wet film this critical issue later.The prior art also mentions A kind of device for being used to prepare calcium titanium ore bed has been supplied, fast vacuum has been realized using vacuum buffer tank, although fast prompt drop may be implemented Low pressure improves film quality, and still, according to equation for ideal gases, if atmospheric pressure is reduced to 10Pa, surge tank is at least wanted 10,000 times bigger than vacuum cavity volume, so huge surge tank is evacuated down to the 10Pa order of magnitude, takes a long time, it is clear that no Suitable for industrialized production.
Summary of the invention
In response to the deficiencies in the existing technology, the present invention provides a kind of large area perovskite solar cell preparation facilities and Preparation method is capable of handling wet film, and can be realized the large-scale production of perovskite solar cell.
The present invention achieves the above technical objects by the following technical means.
A kind of large area perovskite solar cell preparation facilities successively includes:
FTO scribing line P1 module, electron transfer layer are coated with module, infra-red radiation module, electron transfer layer refrigerating module, calcium titanium Mine precursor solution slot coated module, perovskite wet film vacuum distillation module, compound light wave annealing module, the cooling mould of calcium titanium ore bed Block, hole transmission layer coating module, cavitation layer drying module, mechanical scribing line P2 module, electrode evaporation module and mechanical scribing line P3 Module, FTO glass carrier successively pass through modules；
Wherein, first transfer gate and second transfer gate are separately positioned on the two sides of the cavity, for for FTO Glass carrier passes through；The air rammer and the cavity are tightly connected, and can be moved up and down along the inner wall of the cavity, institute Multiple groups parallel connection booster pump device is stated to be connected to the cavity.
Preferably, it is equipped with perforated baffle in the perovskite wet film vacuum distillation module, the perforated baffle is located at described Between the bottom interior wall of cavity and the air rammer.
Preferably, the infra-red radiation module includes infrared lamp array device, and the infrared lamp array device includes several Infrared lamp.
Preferably, the compound light wave annealing module includes compound light wave plate, and the compound light wave plate can issue at least The infrared light of two kinds of wavelength.
Preferably, the FTO scribing line P1 module includes the laser for FTO glass carrier described in scribing.
Preferably, the electron transfer layer coating module and hole transmission layer coating module include slot coated dress It sets.
Preferably, the electron transfer layer refrigerating module, the calcium titanium ore bed refrigerating module and the cavitation layer dry up mould Block includes cooling device.
Preferably, the cooling device is cooling using high speed nitrogen.
Preferably, the electrode evaporation module uses linear evaporation source.
A method of perovskite solar cell being prepared using above-mentioned preparation facilities, is included the following steps:
S1, the FTO glass carrier is placed on transmitting idler wheel, delineates the FTO glass with FTO scribing line P1 module The P1 shielding wire of glass carrier；
FTO glass carrier after S2, delineation P1 shielding wire moves to slot coated device, on the surface of FTO glass carrier Then coating electronic transport layer is annealed by infra-red radiation module, then by electron transfer layer refrigerating module to electron transfer layer It is cooled down to obtain sample I；
S3, sample I move to the perovskite precursor solution slot coated module, carry out the coating of perovskite precursor solution After operation, perovskite wet film is obtained in electron-transport layer surface, then FTO glass carrier enters the chamber by the first transfer gate In vivo, multiple groups parallel connection booster pump device rapid vacuumizing is opened, after a period of time, the air rammer is quickly moved up, and one After the section time, the perovskite wet film becomes intermediate state perovskite thin film, obtains sample II；
S4, sample II move to compound light wave annealing module, and the compound light wave annealing module issues infrared light and moved back Fire, II surface of sample forms perovskite thin film, and is cooled down using calcium titanium ore bed refrigerating module to perovskite thin film, obtains To sample III；
S5, sample III move to hole transmission layer coating module, are coated with hole transmission layer on perovskite thin film surface, then Hole transmission layer is dried up to obtain sample IV using cavitation layer drying module；
S6, sample IV move to mechanical scribing line P2 module, and delineation P2 shielding wire obtains sample V；
S7, sample V move to electrode evaporation module, and electrode evaporation module obtains sample using linear evaporation source evaporation electrode Product VI；
S8, sample VI move to mechanical scribing line P3 module, delineate P3 shielding wire.
Beneficial effects of the present invention:
1) present invention is evaporated under reduced pressure module using perovskite wet film, which can be realized rapid vacuumizing, thus more preferably Perovskite wet film is handled, while realizing the large-scale production of perovskite solar cell, it is easy to operate, when saving technological operation Between, high production efficiency.
2) perforated baffle is arranged in perovskite wet film vacuum distillation module in the present invention, and it is true to can be realized uniformly quick pumping Sky, to reduce or eliminate the damage of perovskite wet film.
3) infra-red radiation module of the invention uses infrared lamp array device, and the thermal efficiency that multiple infrared lamps generate is higher, The more conducively rapid draing of electron transfer layer.
4) compound light wave of the invention annealing module can at least emit the infrared light of two kinds of wavelength, be conducive to perovskite wet film Faster, slot coated device is convenient for the thickness and uniformity of control film for annealing.
Detailed description of the invention
Fig. 1 is that a kind of structure of a preferred embodiment of large area perovskite solar cell preparation facilities of the present invention is shown It is intended to.
1.FTO scribing line P1 module；2. electron transfer layer is coated with module；3. infra-red radiation module；4. electron transfer layer is cooling Module；5. perovskite precursor solution slot coated module；6. perovskite wet film is evaporated under reduced pressure module；The mould 7. compound light wave is annealed Block；8. calcium titanium ore bed refrigerating module；9. hole transmission layer is coated with module；10. cavitation layer dries up module；11. machinery scribing line P2 mould Block；12. electrode evaporates module；13. machinery scribing line P3 module；101. transmitting idler wheel；102.FTO glass carrier；103. laser； 201. slot coated devices；301. infrared lamp array devices；401. cooling device；601. cavity；602. first transfer gates；603. Multiple groups parallel connection is pressurized pump group；604. corrugated flexible hose；605. air rammer；606. perforated baffle；607. second transfer gates；701. multiple Light combination wave plate.
Specific embodiment
Present invention will be further explained with reference to the attached drawings and specific examples, but protection scope of the present invention is simultaneously It is without being limited thereto.
A kind of large area perovskite solar cell preparation facilities of the present invention successively includes: FTO scribing line P1 module 1, electricity Sub- transport layer is coated with module 2, infra-red radiation module 3, electron transfer layer refrigerating module 4, perovskite precursor solution slot coated mould Block 5, perovskite wet film vacuum distillation module 6, compound light wave annealing module 7, calcium titanium ore bed refrigerating module 8, hole transmission layer apply Cloth module 9, cavitation layer drying module 10, mechanical scribing line P2 module 11, electrode evaporation module 12 and mechanical scribing line P3 module 13, FTO glass carrier 102 passes sequentially through each procedure module using transmitting idler wheel 101.
FTO crosses P1 module 1 using 103 scribing FTO glass carrier 102 of laser, and electron transfer layer is coated with module 2 and institute State hole transmission layer coating module 9 include slot coated device 201, slot coated device 201 convenient for control film thickness and Uniformity.
Infra-red radiation module 3 includes infrared lamp array device 301, and infrared lamp arrays array apparatus 301 is assembled by multiple groups infrared lamp It forms, the thermal efficiency is higher, and electron transfer layer can be made more rapidly to complete to anneal, and annealing efficiency is higher, and the source of infrared radiation can be halogen Plain lamp, nickel chromium triangle aluminium heating wire, carbon crystal heating wire etc..
Electron transfer layer refrigerating module 4, calcium titanium ore bed refrigerating module 8 and cavitation layer drying module 10 include cooling device 401.Preferably, cooling device 401 is to be cooled down using high speed nitrogen, is cooled down and dried up using high speed nitrogen, made Electron transfer layer, calcium titanium ore bed and cavitation layer cooling velocity is fast, rate of drying is fast.
Perovskite wet film vacuum distillation module 6 include: cavity 601, the first transfer gate 602, the second transfer gate 607, Air rammer 605 and multiple groups parallel connection booster pump device 603, first transfer gate 602 and second transfer gate 607 are set respectively It sets in the two sides of the cavity 601, can be slided up and down along cavity 601, for passing through for FTO glass carrier 102, when FTO glass When glass carrier 102 needs to enter in cavity 601,602 upward sliding of the first transfer gate, so that FTO glass carrier 102 passes through, so First transfer gate, 602 slide downward afterwards, so that cavity sliding 601 is closed, similarly, when FTO glass carrier 102 needs cavity 601 When interior output, 607 upward sliding of the second transfer gate, so that FTO glass carrier 102 passes through, then the second transfer gate 607 is to downslide It is dynamic, so that cavity sliding 601 is closed,；The air rammer 605 is tightly connected with the cavity 601, and can be along the cavity 601 inner wall moves up and down, and the multiple groups parallel connection booster pump device 603 passes through the air rammer 605 by corrugated flexible hose 604 It is connected to the cavity 601.
It is equipped with perforated baffle 606 in the perovskite wet film vacuum distillation module 6, the perforated baffle 606 is located at described Between the bottom interior wall of cavity 601 and the air rammer 605, the aperture on perforated baffle 606 is 2~10mm, is had more The effect of good Ground Split air flowing.
The electrode evaporation module 12 uses linear evaporation source.
The compound light wave annealing module 7 includes compound light wave plate 701, and the compound light wave plate 701 can issue at least The infrared light of two kinds of wavelength possesses two different heating elements in compound light wave plate 701 in the present embodiment, and passes through specific filter Wave plate realizes compound light wave, and annealing process is intermittent.In compound light wave plate 701 comprising 3um nearby and two near 5.7um The light source of kind wavelength is, it can be achieved that short annealing, promotes the generation of black phase perovskite thin film.
A kind of large area perovskite solar cell preparation method comprising following steps:
S1. one piece 30*60 centimetres of FTO glass carrier 102 is subjected to laser grooving and scribing P1 shielding wire, line with laser 103 Width is 100um, and line spacing is 1 centimetre.
S2. the FTO glass carrier 102 cut out is sent into electron transfer layer and is coated with module 2 by transmitting idler wheel 101, passes through slit Coating electronic transport layer precursor solution, precursor solution are the stannum oxide nano-crystal aqueous solution of 3%wt, and nanocrystalline size is 10- 15nm, after coating is completed, substrate enters infra-red radiation module 3 and carries out infrared annealing, radiates the electricity of removal in 10s seconds using infrared lamp The solvent of pond electron transfer layer later cools down electron transfer layer using the cooling device 401 with high speed nitrogen.
S3. the FTO glass carrier 102 for being coated with electron transfer layer transmitting idler wheel 101 is transferred to perovskite precursor solution Slot coated module 5 is coated with perovskite precursor solution by slot coated method, and perovskite precursor liquid solvent is DMF:DMSO= 4:1, solute are MAI (1.2M), and PbI2 (1.2M) is sent into cavity 601 after the completion of coating, opens multiple groups parallel connection booster pump device 603 rapid vacuumizings, after 10S, air rammer 605 is quickly moved up to air pressure decrease speed in accelerating cavity body, after 15S, 601 pressure of cavity drops to about 5Pa, at this point, coated wet film becomes a kind of perovskite thin film of intermediate state, decompression is steamed later It evaporates chamber and deflates at once and reach atmospheric pressure, and substrate is transferred to compound light wave annealing module 7 and carries out compound light wave annealing operation.
S4. compound light wave lamp opens 5S and closes 10S in compound light wave plate 701, so recycles, totally 4 circulations, forms calcium titanium Mine film is quickly cooled down by the cooling device 401 with high speed nitrogen later.
S5. the painting work of hole transmission layer is carried out with slot coated device 201, perovskite thin film passes through slot coated sky Cave material precursor solution, such as Sprio, concentration 1M, later by the cooling device 401 with high speed nitrogen to hole transport Layer is dried up.
S6. with transmitting idler wheel 101 transmitting such as mechanical scribing line P2 module 11, it is transferred to mechanical liner agency, with P1 shielding wire Interval 100um portrays Article 2 P2 shielding wire, and P2 shielding wire will carve electron transfer layer, calcium titanium ore bed and hole transmission layer, and Retain FTO layers
S7. finally, evaporating module 12 into electrode, using a linear evaporation source evaporated metal electrode,
S8. shielding wire P3 being delineated with the interval P2 100um, P3 will carve power down pond transport layer, calcium titanium ore bed and hole transmission layer, Electrode, and retain FTO, encapsulation forms perovskite component.
The embodiment is a preferred embodiment of the present invention, but present invention is not limited to the embodiments described above, not In the case where substantive content of the invention, any conspicuous improvement that those skilled in the art can make, replacement Or modification all belongs to the scope of protection of the present invention.

Claims (10)

1. a kind of large area perovskite solar cell preparation facilities, which is characterized in that successively include:
FTO crosses P1 module (1), electron transfer layer is coated with module (2), infra-red radiation module (3), electron transfer layer refrigerating module (4), perovskite precursor solution slot coated module (5), perovskite wet film vacuum distillation module (6), compound light wave annealing module (7), calcium titanium ore bed refrigerating module (8), hole transmission layer coating module (9), cavitation layer drying module (10), mechanical scribing line P2 mould Block (11), electrode evaporation module (12) and mechanical scribing line P3 module (13), FTO glass carrier (102) successively pass through modules；
Wherein, perovskite wet film vacuum distillation module (6) includes:
Cavity (601), the first transfer gate (602), the second transfer gate (607), air rammer (605) and multiple groups parallel connection booster pump dress It sets (603), first transfer gate (602) and second transfer gate (607) are separately positioned on the two of the cavity (601) Side, for passing through for FTO glass carrier (102)；The air rammer (605) and the cavity (601) are tightly connected, and can Inner wall along the cavity (601) moves up and down, and the multiple groups parallel connection booster pump device (603) is connected to the cavity (601).
2. large area perovskite solar cell preparation facilities according to claim 1, which is characterized in that the perovskite is wet Film is evaporated under reduced pressure in module (6) and is equipped with perforated baffle (606), and the perforated baffle (606) is located at the bottom of the cavity (601) Between inner wall and the air rammer (605).
3. large area perovskite solar cell preparation facilities according to claim 1, which is characterized in that the infra-red radiation Module (3) includes infrared lamp array device (301), and the infrared lamp array device (301) includes several infrared lamps.
4. large area perovskite solar cell preparation facilities according to claim 1, which is characterized in that the compound light wave Annealing module (7) includes compound light wave plate (701), and the compound light wave plate (701) can issue the infrared of at least two wavelength Light.
5. large area perovskite solar cell preparation facilities according to claim 1, which is characterized in that the FTO scribing line P1 module (1) includes the laser (103) for FTO glass carrier (102) described in scribing.
6. large area perovskite solar cell preparation facilities according to claim 1, which is characterized in that the electron-transport Layer coating module (2) and hole transmission layer coating module (9) include slot coated device (201).
7. large area perovskite solar cell preparation facilities according to claim 1, which is characterized in that the electron-transport Layer refrigerating module (4), the calcium titanium ore bed refrigerating module (8) and cavitation layer drying module (10) include cooling device (401)。
8. large area perovskite solar cell preparation facilities according to claim 7, which is characterized in that the cooling device (401) cooling using high speed nitrogen.
9. large area perovskite solar cell preparation facilities according to claim 1, which is characterized in that the electrode evaporation Module (12) uses linear evaporation source.
10. a kind of method using the preparation perovskite solar cell of preparation facilities described in claim 1, which is characterized in that including Following steps:
S1, the FTO glass carrier (102) is placed in transmitting idler wheel (101), with FTO scribing line P1 module (1) delineation The P1 shielding wire of the FTO glass carrier (102)；
FTO glass carrier (102) after S2, delineation P1 shielding wire moves to slot coated device (201), in FTO glass carrier (102) surface coating electronic transport layer, is then annealed by infra-red radiation module (3), then by the cooling mould of electron transfer layer Block (4) cools down electron transfer layer to obtain sample I；
S3, sample I move to the perovskite precursor solution slot coated module (5), carry out the coating of perovskite precursor solution After operation, perovskite wet film is obtained in electron-transport layer surface, then FTO glass carrier (102) passes through the first transfer gate (602) In into the cavity (601), multiple groups parallel connection booster pump device (603) rapid vacuumizing is opened, it is described pneumatic after a period of time Piston (605) quickly moves up, and after a period of time, the perovskite wet film becomes intermediate state perovskite thin film, obtains sample Ⅱ；
S4, sample II move to compound light wave annealing module (7), and compound light wave annealing module (7) issues infrared light and carry out Annealing, II surface of sample form perovskite thin film, and cold to perovskite thin film progress using calcium titanium ore bed refrigerating module (8) But, sample III is obtained；
S5, sample III move to hole transmission layer coating module (9), are coated with hole transmission layer on perovskite thin film surface, then Hole transmission layer is dried up to obtain sample IV using cavitation layer drying module (10)；
S6, sample IV move to mechanical scribing line P2 module (11), and delineation P2 shielding wire obtains sample V；
S7, sample V move to electrode evaporation module (12), and electrode evaporation module (12) is obtained using linear evaporation source evaporation electrode To sample VI；
S8, sample VI move to mechanical scribing line P3 module (13), delineate P3 shielding wire.
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Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112467042A (en) * 2020-11-25 2021-03-09 西南石油大学 Intelligent automatic production system for perovskite solar cell module
CN113130786A (en) * 2019-12-31 2021-07-16 Tcl集团股份有限公司 Light emitting diode and preparation method thereof
CN113571648A (en) * 2021-07-02 2021-10-29 常州大学 Device and method for preparing flexible perovskite and all-perovskite laminated solar cell in roll-to-roll mode
CN113644209A (en) * 2021-08-11 2021-11-12 无锡极电光能科技有限公司 Preparation method and preparation device of perovskite film layer and perovskite solar cell
CN114388701A (en) * 2022-01-17 2022-04-22 华能新能源股份有限公司 Manufacturing method of perovskite battery
CN115915875A (en) * 2022-05-05 2023-04-04 四川大学 Preparation method of full-slit coating large-area perovskite solar cell
WO2024018908A1 (en) * 2022-07-21 2024-01-25 東レエンジニアリング株式会社 Method for forming perovskite film and apparatus for forming perovskite film
WO2024099521A1 (en) * 2022-11-09 2024-05-16 Hanwha Q Cells Gmbh Method for producing a solar cell

Citations (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000348908A (en) * 1999-06-09 2000-12-15 Matsushita Electric Ind Co Ltd Manufacture of thermistor thin film
CN101356620A (en) * 2005-10-11 2009-01-28 阿维扎技术有限公司 Positive displacement pumping chamber
CN102157375A (en) * 2005-04-13 2011-08-17 应用材料公司 Dual wavelength thermal flux laser anneal
CN104157794A (en) * 2014-07-03 2014-11-19 苏州大学 Method for preparing transitional metal oxide thin film with adjustable thickness and work function
CN204189772U (en) * 2014-12-03 2015-03-04 苏州德龙激光股份有限公司 Dual-wavelength laser annealing device
CN107275523A (en) * 2017-06-13 2017-10-20 苏州大学 A kind of preparation method of purely inorganic perovskite LED device
CN107335919A (en) * 2016-04-29 2017-11-10 上海微电子装备（集团）股份有限公司 A kind of laser package device and method for packing
CN107452620A (en) * 2016-05-31 2017-12-08 上海微电子装备（集团）股份有限公司 A kind of IGBT silicon chip back sides method for annealing
CN108447996A (en) * 2018-02-07 2018-08-24 友达光电股份有限公司 Perovskite structure, electronic device using same, and method for manufacturing photoelectric conversion layer
CN108677169A (en) * 2018-05-17 2018-10-19 天津理工大学 A kind of preparation facilities of organic ammonium metal halide film and preparation and characterizing method
CN109155366A (en) * 2016-03-18 2019-01-04 洛桑联邦理工学院 High efficiency large area perovskite solar battery and its production technology

Patent Citations (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000348908A (en) * 1999-06-09 2000-12-15 Matsushita Electric Ind Co Ltd Manufacture of thermistor thin film
CN102157375A (en) * 2005-04-13 2011-08-17 应用材料公司 Dual wavelength thermal flux laser anneal
CN101356620A (en) * 2005-10-11 2009-01-28 阿维扎技术有限公司 Positive displacement pumping chamber
CN104157794A (en) * 2014-07-03 2014-11-19 苏州大学 Method for preparing transitional metal oxide thin film with adjustable thickness and work function
CN204189772U (en) * 2014-12-03 2015-03-04 苏州德龙激光股份有限公司 Dual-wavelength laser annealing device
CN109155366A (en) * 2016-03-18 2019-01-04 洛桑联邦理工学院 High efficiency large area perovskite solar battery and its production technology
CN107335919A (en) * 2016-04-29 2017-11-10 上海微电子装备（集团）股份有限公司 A kind of laser package device and method for packing
CN107452620A (en) * 2016-05-31 2017-12-08 上海微电子装备（集团）股份有限公司 A kind of IGBT silicon chip back sides method for annealing
CN107275523A (en) * 2017-06-13 2017-10-20 苏州大学 A kind of preparation method of purely inorganic perovskite LED device
CN108447996A (en) * 2018-02-07 2018-08-24 友达光电股份有限公司 Perovskite structure, electronic device using same, and method for manufacturing photoelectric conversion layer
CN108677169A (en) * 2018-05-17 2018-10-19 天津理工大学 A kind of preparation facilities of organic ammonium metal halide film and preparation and characterizing method

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
XIONG LI ET AL: "A vacuum flash–assisted solution process for high-efficiency large-area perovskite solar cells", 《SCIENCE》 *

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113130786A (en) * 2019-12-31 2021-07-16 Tcl集团股份有限公司 Light emitting diode and preparation method thereof
CN112467042A (en) * 2020-11-25 2021-03-09 西南石油大学 Intelligent automatic production system for perovskite solar cell module
CN113571648A (en) * 2021-07-02 2021-10-29 常州大学 Device and method for preparing flexible perovskite and all-perovskite laminated solar cell in roll-to-roll mode
WO2023273879A1 (en) * 2021-07-02 2023-01-05 常州大学 Device and method for roll-to-roll preparation of flexible perovskite and full-perovskite laminated solar cells
CN113571648B (en) * 2021-07-02 2023-08-22 常州大学 Device and method for preparing flexible perovskite and full perovskite laminated solar cell from reel to reel
CN113644209A (en) * 2021-08-11 2021-11-12 无锡极电光能科技有限公司 Preparation method and preparation device of perovskite film layer and perovskite solar cell
CN113644209B (en) * 2021-08-11 2024-02-02 无锡极电光能科技有限公司 Perovskite film layer preparation method and device and perovskite solar cell
CN114388701A (en) * 2022-01-17 2022-04-22 华能新能源股份有限公司 Manufacturing method of perovskite battery
CN115915875A (en) * 2022-05-05 2023-04-04 四川大学 Preparation method of full-slit coating large-area perovskite solar cell
CN115915875B (en) * 2022-05-05 2023-08-29 四川大学 Preparation method of full-slit coated large-area perovskite solar cell
WO2024018908A1 (en) * 2022-07-21 2024-01-25 東レエンジニアリング株式会社 Method for forming perovskite film and apparatus for forming perovskite film
WO2024099521A1 (en) * 2022-11-09 2024-05-16 Hanwha Q Cells Gmbh Method for producing a solar cell

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