CN110010769B - Preparation method of oriented growth organic-inorganic hybrid perovskite film - Google Patents
Preparation method of oriented growth organic-inorganic hybrid perovskite film Download PDFInfo
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- CN110010769B CN110010769B CN201910234418.1A CN201910234418A CN110010769B CN 110010769 B CN110010769 B CN 110010769B CN 201910234418 A CN201910234418 A CN 201910234418A CN 110010769 B CN110010769 B CN 110010769B
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- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/12—Deposition of organic active material using liquid deposition, e.g. spin coating
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- H—ELECTRICITY
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- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/40—Thermal treatment, e.g. annealing in the presence of a solvent vapour
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- Y02E10/00—Energy generation through renewable energy sources
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Abstract
The invention discloses a preparation method of an oriented growth organic-inorganic hybrid perovskite film. The method mainly comprises the following steps: mixing a certain amount of lead iodide and methyl ammonium iodide, dissolving in N, N-dimethylformamide, fully and uniformly oscillating to form a solution, dripping a proper amount of the solution on a graphene/copper substrate, carrying out spin coating by using a spin coater, and finally carrying out vacuum heat treatment to obtain the oriented growth organic-inorganic hybrid perovskite thin film. The method has the advantages of obvious effect, low cost, simple process and strong practicability.
Description
Technical Field
The invention relates to a preparation method of an oriented growth organic-inorganic hybrid perovskite film, belonging to the field of organic-inorganic hybrid semiconductor nano material manufacture.
Background
In recent years, with the intensive research on perovskite materials, researchers find that perovskite materials have a very great application prospect in the field of solar cells. Short years, organic-inorganic hybrid perovskites (CH)3NH3PbI3) The photoelectric conversion efficiency of the solar cell is rapidly increased, the efficiency of the solar cell is similar to that of the traditional solar cell or even higher than that of the traditional solar cell, and the solar cell has huge development potential in the future. The organic-inorganic hybrid perovskite used as a solar cell material has the advantages of large light absorption range, capability of covering the whole visible light wave band, large light absorption amount, long exciton diffusion distance, long service life of a photon-generated carrier and the like, can effectively reduce the production cost and pollution of the solar cell industry, and improves the photoelectric conversion efficiency.
The research is dedicated to obtaining an oriented-grown organic-inorganic hybrid perovskite thin film with high crystallinity, and we can expect that the oriented perovskite thin film can further enhance the separation efficiency of photogenerated carriers and better mechanical properties and the like while keeping the original excellent photoelectric properties of the organic-inorganic hybrid perovskite, thereby realizing large-scale application. Therefore, it is very significant to develop a preparation method of oriented growth organic-inorganic hybrid perovskite thin film with simple process, low cost and obvious effect.
Disclosure of Invention
The invention provides a preparation method of an oriented growth organic-inorganic hybrid perovskite film, which comprises the following steps:
1) dissolving lead iodide and methyl ammonium iodide in N, N-dimethylformamide solvent, and sufficiently oscillating and ultrasonically dispersing for at least 20min to form a uniform solution.
2) Dripping the mixed solution obtained in the step 1) on a graphene/copper substrate, and performing spin coating by using a spin coater.
3) And putting the spin-coated substrate into a vacuum drying oven for annealing treatment.
The substrate must be a graphene/copper substrate.
The molar weight ratio of the lead iodide to the methyl ammonium iodide is 1: 1.
The annealing treatment condition is 100 ℃, and the temperature is kept for at least 10 min.
The preparation process is simple, the process is easy to control, and the obtained organic-inorganic hybrid perovskite thin film has the phenomenon of large-area oriented texture arrangement, and is different from the phenomenon that only small crystals or particles are randomly arranged on other substrates (ITO glass substrates, Si substrates, copper substrates and the like) under the same condition. And a large number of development experiments show that the ordered arrangement of polar molecules such as organic and inorganic hybrid perovskite is driven by dipole moment formed by charge transfer between graphene and copper.
Drawings
FIG. 1 is an SEM image of an oriented-growth organic-inorganic hybrid perovskite thin film prepared in example 1;
FIG. 2 is an XRD pattern of an oriented growth organic-inorganic hybrid perovskite thin film prepared in example 1.
Fig. 3 is an SEM image of a non-oriented organic-inorganic hybrid perovskite thin film prepared on a general Cu substrate.
Detailed Description
The technical scheme of the invention is further illustrated by the following examples.
Example 1
1) 0.578g of lead iodide and 0.2g of methyl ammonium iodide are dissolved in 1mL of N, N-dimethylformamide solvent, and the mixture is fully oscillated and ultrasonically dispersed for 20min to form a yellow uniform clear solution.
2) And dripping 50 mu L of solution on a graphene/copper substrate, and carrying out spin coating by using a spin coater for 5000-30 s.
3) And putting the spin-coated substrate into a vacuum drying oven for vacuum annealing treatment, and heating at 100 ℃ for 10 min.
The SEM image and XRD image of the prepared oriented organic-inorganic hybrid perovskite thin film are respectively shown in figure 1 and figure 2, and the oriented organic-inorganic hybrid perovskite thin film realizes large-area one-dimensional oriented texture arrangement.
Example 2
1) 0.578g of lead iodide and 0.3g of methyl ammonium iodide are dissolved in 1mL of N, N-dimethylformamide solvent, and the mixture is fully oscillated and ultrasonically dispersed for 20min to form a yellow uniform clear solution.
2) And dripping 50 mu L of solution on a graphene/copper substrate, and carrying out spin coating by using a spin coater for 5000-30 s.
3) And putting the spin-coated substrate into a vacuum drying oven for vacuum annealing treatment, and heating at 100 ℃ for 10 min.
Example 3
1) 0.578g of lead iodide and 0.2g of methyl ammonium iodide are dissolved in 1mL of N, N-dimethylformamide solvent, and the mixture is fully oscillated and ultrasonically dispersed for 20min to form a yellow uniform clear solution.
2) And dripping 50 mu L of solution on a graphene/copper substrate, and carrying out spin coating by using a spin coater for 5000-30 s.
3) And (3) putting the spin-coated substrate into a vacuum drying oven for vacuum annealing treatment, and heating at 100 ℃ for 40 min.
Claims (1)
1. A preparation method of an oriented growth organic-inorganic hybrid perovskite thin film is characterized by comprising the following steps:
1) dissolving lead iodide and methyl ammonium iodide in N, N-dimethylformamide solvent, and fully oscillating and ultrasonically dispersing for at least 20min to form a uniform solution; the molar weight ratio of the lead iodide to the methyl ammonium iodide is 1: 1;
2) dripping the mixed solution obtained in the step 1) on a graphene/copper substrate, and performing spin coating by using a spin coater;
3) putting the spin-coated substrate into a vacuum drying oven for annealing treatment, wherein the annealing treatment condition is 100 ℃, and the temperature is kept for at least 10 min; preparing an organic-inorganic hybrid perovskite thin film with oriented texture arrangement; the charge transfer between graphene and copper forms dipole moment to drive the ordered arrangement of the polar molecules of organic-inorganic hybrid perovskite.
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CN110808335B (en) * | 2019-11-04 | 2022-11-15 | 吉林师范大学 | Preparation method and application of tin-lead binary perovskite film with preferred orientation growth |
CN113471369B (en) * | 2020-03-31 | 2022-06-17 | 浙江大学 | Light emitting device and method for manufacturing light emitting device |
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