CN110346857A - Utilize the method for multi beam ultrafast laser production diffraction optical device - Google Patents
Utilize the method for multi beam ultrafast laser production diffraction optical device Download PDFInfo
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- CN110346857A CN110346857A CN201910635590.8A CN201910635590A CN110346857A CN 110346857 A CN110346857 A CN 110346857A CN 201910635590 A CN201910635590 A CN 201910635590A CN 110346857 A CN110346857 A CN 110346857A
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- Prior art keywords
- photoresist
- optical device
- diffraction optical
- laser
- multi beam
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Classifications
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/18—Diffraction gratings
- G02B5/1847—Manufacturing methods
- G02B5/1857—Manufacturing methods using exposure or etching means, e.g. holography, photolithography, exposure to electron or ion beams
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/0005—Production of optical devices or components in so far as characterised by the lithographic processes or materials used therefor
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2051—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source
- G03F7/2053—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source using a laser
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70408—Interferometric lithography; Holographic lithography; Self-imaging lithography, e.g. utilizing the Talbot effect
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Diffracting Gratings Or Hologram Optical Elements (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
Abstract
The present invention provides a kind of methods using multi beam ultrafast laser production diffraction optical device, comprising: photoresist is coated in transparent wafer material surface；Using multi beam ultrafast laser in photoresist surface or internal generation interference point or striped, two-photon absorption, the polymerization, solidification of photoresist are generated at interference point or striped, forms cured pattern；Uncured photoresist is washed away using organic solvent；By way of chemistry or plasma etching, grating is processed on wafer material surface, will be etched without cured photoresist；Remaining solidification photoresist is washed away, diffraction optical device is obtained；Diffraction optical device is cut by the cutting mode of laser or machinery, obtains single diffraction optical device.The resolution ratio for the diffraction optical device that the present invention makes, between several hundred nanometers, is applicable in different required precisions at several nanometers, and relative to conventional laser processing mode, the diffraction optical device process velocity processed using this method is faster.
Description
Technical field
The present invention relates to a kind of optical device production methods, refer in particular to a kind of utilization multi beam ultrafast laser production diffraction light
The method for learning device.
Background technique
Diffraction optical element is what the diffraction theory based on light wave designed, it refers to surface with ladder-like diffraction structure
Optical element.There are many production method of diffraction optical element, and initial, standard diffraction element production method is by two meta templates
Step relief surface is formed through the transfer of multiple figure, alignment；Second class is emerging direct write method, without utilize mask plate,
Continuous relief profile directly only is formed in element surface by changing exposure intensity, mainly includes that laser beam direct write and electron beam are straight
It writes；Third class gray-tone mask figure transfer printing, mask used plate transmissivity distribution are multi-level, Jing Yici figure transfer i.e. shapes
At continuous or ledge surface structure.It, can be direct using optical material later due to the development of ultraprecise diamond chip equipment
High-precision diffraction element is manufactured using Ultraprecision Machining.Further, it is also possible to utilize the high-precision mold pressure first made
Produce large batch of diffraction optical element.But as the requirement of the production precision to diffraction element is higher and higher, it is necessary to mention
A kind of new diffraction optical element production method out.
Summary of the invention
A kind of multi beam ultrafast laser production diffraction optical device is utilized the technical problems to be solved by the present invention are: providing
Method, it is intended to improve the production precision and rate of diffraction optical device.
In order to solve the above-mentioned technical problem, the technical solution adopted by the present invention are as follows: a kind of to be made using multi beam ultrafast laser
The method of diffraction optical device, including,
Step 1: photoresist is coated in transparent wafer material surface；
Step 2: using multi beam ultrafast laser photoresist surface or it is internal generate interference point or striped, in interference point or
Two-photon absorption, the polymerization, solidification that photoresist is generated at striped, form cured pattern；
Step 3: uncured photoresist is washed away using organic solvent；
Step 4: processing grating by way of chemistry or plasma etching on wafer material surface, not solidifying
Photoresist etching；
Step 5: remaining solidification photoresist is washed away, diffraction optical device is obtained；
Step 6: cutting by the cutting mode of laser or machinery to diffraction optical device, single diffraction light is obtained
Learn device.
Further, in the step 2, for the wavelength of the laser used from dark purple to far infrared, pulsewidth is less than 10ps, sharp
Light number of beams is 2-4 beam.
Further, in the step 3, the organic solvent used is acetone.
Further, in the step 3, the temperature of the organic solvent is heated to 50 degrees Celsius.
Further, in the step 1, transparent wafer material includes glass or plastics.
Further, in the step 2, exposure mask is used in photoresist curing operation, block partial coherence point or striped and
It allows specific interference point or striped to pass through, cooperates the movement of laser board or galvanometer, produce cured pattern.
Further, in the step 5, remaining solidification photoresist is washed away, including wet process is removed photoresist and dry method is removed photoresist；
The wet process removes photoresist to remove cured photoresist by organic solvent or inorganic solvent；
The dry method removes photoresist to remove cured photoresist using plasma.
Further, in the step 6, machine cuts mode is specially split using diamond cutter on sample surfaces edge
The scribing line of piece path, then imposes external force for wafer and splits into single diffraction optical device；
The laser cutting mode is specially directly cut off along sliver path using laser light source or is drawn with laser light source
External force sliver is utilized after line, obtains single diffraction optical device, the wavelength of the laser light source is from deep ultraviolet to far infrared, pulsewidth
From 100fs to 100ns.
The beneficial effects of the present invention are: the resolution ratio for the diffraction optical device that the present invention makes is received at several nanometers to several hundred
Between rice, it is applicable in different required precisions, relative to conventional laser processing mode, the diffraction optics processed using this method
Device fabrication speed is faster；This method is suitable for a variety of different wafer materials simultaneously, convenient, efficient.
Detailed description of the invention
Specific structure of the invention is described in detail with reference to the accompanying drawing.
Fig. 1 is the method flow that diffraction optical device is made using multi beam ultrafast laser of a specific embodiment of the invention
Figure.
Specific embodiment
In order to describe the technical content, the structural feature, the achieved object and the effect of this invention in detail, below in conjunction with embodiment
And attached drawing is cooperated to be explained in detail.
Refering to fig. 1, a specific embodiment of the invention are as follows: a kind of to make diffraction optical device using multi beam ultrafast laser
Method, comprising:
S10, photoresist is coated in transparent wafer material surface；
In this step, photoresist is the high-molecular compound that can have resistance to corrosion after illumination, according in developing process
The removal or reservation of middle exposure area can be divided into positive photoresist and negative photo degree, and light occurs for the exposed portion of positive photoresist
Chemical reaction can be dissolved in cleaning solution, and unexposed part does not dissolve in cleaning solution, remains on substrate, will be identical as on exposure mask
Graph copying to substrate on；The exposed portion of negative photoresist does not dissolve in cleaning solution because of crosslinking curing, and unexposed portion
It is dissolved in cleaning solution, by the graph copying to substrate opposite on exposure mask, following steps are illustrated by taking negative photoresist as an example.
S20, interference point/striped is generated in photoresist surface/inside using multi beam ultrafast laser, at interference point/striped
Two-photon absorption, the polymerization, solidification for generating photoresist, form cured pattern；
In this step, photoresist does not absorb the laser of the wavelength；Multiple laser beam is in photoresist surface and/or inside
Specific position generates interference point/striped, and then two-photon absorption, the polymerization, solidification of photoresist are generated at interference point/striped；
Particularly, special exposure mask can be used in the process, block partial coherence point/striped and make specific interference point/striped logical
It crosses, cooperates the movement of board or galvanometer, to realize the production of complex pattern；
S30, uncured photoresist is washed away using organic solvent；
In this step, cleaning liquid is usually organic solvent, such as acetone；To accelerate cleaning process, may be selected to be heated to
Certain temperature, such as 50 degrees Celsius.
S40, chemistry or plasma etching by way of, wafer material surface process grating, will be not cured
Photoresist etching；
In this step, conventional chemistry or plasma etching generally include 4 steps: 1) cleaning treatment；2) at corrosion protection
Reason；3) lithography；4) lumarith is removed；This process of step 3 lithography is related generally to herein, it is dense by control corrosion rate agent
Degree, etching temperature and time etc., the pattern needed for being completed in sample surfaces.
S50, remaining solidification photoresist is washed away, obtains diffraction optical device；
In this step, the step for include that wet process is removed photoresist and dry method is removed photoresist two ways.Wherein, it is that selection is closed that wet process, which is removed photoresist,
Suitable organic solvent or inorganic solvent removes cured photoresist；It is to utilize plasma by cured photoresist that dry method, which is removed photoresist,
Removal.
S60, diffraction optical device is cut by the cutting mode of laser or machinery, obtains single diffraction optics device
Part.
In this step, mechanical system cutting generally uses diamond cutter (or similar means) in sample surfaces along sliver road
Diameter scribing line, then imposes external force and wafer is split into required single component；Laser mode cutting then utilizes suitable laser
Light source (for wavelength from deep ultraviolet to far infrared, pulsewidth is from 100fs to 100ns) directly cuts off along sliver path or such as mechanical cutting
It equally first crosses and utilizes external force sliver afterwards.
The technical program has the technical effect that the resolution ratio of diffraction optical device that the present invention makes at several nanometers to several
Between hundred nanometers, it is applicable in different required precisions, relative to conventional laser processing mode, the diffraction processed using this method
Optical device process velocity is faster；This method is suitable for a variety of different wafer materials simultaneously, convenient, efficient.
In one embodiment, in the step 2, from dark purple to far infrared, pulsewidth is less than for the wavelength of the laser used
10ps, laser beam quantity are 2-4 beam.
In one embodiment, in the step 3, the organic solvent used is acetone.
In one embodiment, in the step 3, the temperature of the organic solvent is heated to 50 degrees Celsius.
In one embodiment, in the step 1, transparent wafer material includes glass or plastics.
In one embodiment, in the step 2, exposure mask is used in photoresist curing operation, blocks partial coherence point
Or striped and allow specific interference point or striped to pass through, cooperate the movement of laser board or galvanometer, produce cured pattern.
In one embodiment, in the step 5, remaining solidification photoresist is washed away, including wet process is removed photoresist and done
Method is removed photoresist；
The wet process removes photoresist to remove cured photoresist by organic solvent or inorganic solvent；
The dry method removes photoresist to remove cured photoresist using plasma.
In one embodiment, in the step 6, machine cuts mode, specially using diamond cutter in sample
Surface is crossed along sliver path, is then imposed external force for wafer and is split into single diffraction optical device；
The laser cutting mode is specially directly cut off along sliver path using laser light source or is drawn with laser light source
External force sliver is utilized after line, obtains single diffraction optical device, the wavelength of the laser light source is from deep ultraviolet to far infrared, pulsewidth
From 100fs to 100ns.
Herein first, second ... only represents the differentiation of its title, not representing their significance level and position has what
It is different.
Herein, up, down, left, right, before and after only represents its relative position without indicating its absolute position.The foregoing is merely
The embodiment of the present invention is not intended to limit the scope of the invention, all to utilize description of the invention and accompanying drawing content institute
The equivalent structure or equivalent flow shift of work is applied directly or indirectly in other relevant technical fields, and is similarly included in
In scope of patent protection of the invention.
Claims (8)
1. a kind of method using multi beam ultrafast laser production diffraction optical device, it is characterised in that: including,
Step 1: photoresist is coated in transparent wafer material surface；
Step 2: using multi beam ultrafast laser in photoresist surface or internal generation interference point or striped, in interference point or striped
Place generates the two-photon absorption of photoresist, polymerization, solidification, forms cured pattern；
Step 3: uncured photoresist is washed away using organic solvent；
Step 4: grating is processed on wafer material surface by way of chemistry or plasma etching, it will be without cured light
Photoresist etching；
Step 5: remaining solidification photoresist is washed away, diffraction optical device is obtained；
Step 6: cutting by the cutting mode of laser or machinery to diffraction optical device, single diffraction optics device is obtained
Part.
2. utilizing the method for multi beam ultrafast laser production diffraction optical device as described in claim 1, it is characterised in that: described
In step 2, the wavelength of the laser used is from dark purple to far infrared, and for pulsewidth less than 10ps, laser beam quantity is 2-4 beam.
3. utilizing the method for multi beam ultrafast laser production diffraction optical device as described in claim 1, it is characterised in that: described
In step 3, the organic solvent used is acetone.
4. utilizing the method for multi beam ultrafast laser production diffraction optical device as described in claim 1, it is characterised in that: described
In step 3, the temperature of the organic solvent is heated to 50 degrees Celsius.
5. utilizing the method for multi beam ultrafast laser production diffraction optical device as described in claim 1, it is characterised in that: described
In step 1, transparent wafer material includes glass or plastics.
6. utilizing the method for multi beam ultrafast laser production diffraction optical device as described in claim 1, it is characterised in that: described
In step 2, exposure mask is used in photoresist curing operation, is blocked partial coherence point or striped and is allowed specific interference point or striped
Pass through, cooperates the movement of laser board or galvanometer, produce cured pattern.
7. utilizing the method for multi beam ultrafast laser production diffraction optical device as described in claim 1, it is characterised in that: described
In step 5, remaining solidification photoresist is washed away, including wet process is removed photoresist and dry method is removed photoresist；
The wet process removes photoresist to remove cured photoresist by organic solvent or inorganic solvent；
The dry method removes photoresist to remove cured photoresist using plasma.
8. utilizing the method for multi beam ultrafast laser production diffraction optical device as described in claim 1, it is characterised in that: described
In step 6, machine cuts mode is specially crossed along sliver path in sample surfaces using diamond cutter, is then imposed outer
Wafer is split into single diffraction optical device by power；
The laser cutting mode, after specially directly cutting off along sliver path or crossed with laser light source using laser light source
Using external force sliver, obtain single diffraction optical device, the wavelength of the laser light source from deep ultraviolet to far infrared, pulsewidth from
100fs to 100ns.
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114660686A (en) * | 2022-03-02 | 2022-06-24 | 武汉光谷信息光电子创新中心有限公司 | Method for preparing microlens set and semiconductor structure |
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