KR101765325B1 - Method for manufacturing mold using embossed pattern by laser - Google Patents

Method for manufacturing mold using embossed pattern by laser Download PDF

Info

Publication number
KR101765325B1
KR101765325B1 KR1020150119502A KR20150119502A KR101765325B1 KR 101765325 B1 KR101765325 B1 KR 101765325B1 KR 1020150119502 A KR1020150119502 A KR 1020150119502A KR 20150119502 A KR20150119502 A KR 20150119502A KR 101765325 B1 KR101765325 B1 KR 101765325B1
Authority
KR
South Korea
Prior art keywords
pattern
thin film
mold
polymer thin
laser beam
Prior art date
Application number
KR1020150119502A
Other languages
Korean (ko)
Other versions
KR20170024635A (en
Inventor
최지연
김효정
채상민
임선종
정준호
Original Assignee
한국기계연구원
부산대학교 산학협력단
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 한국기계연구원, 부산대학교 산학협력단 filed Critical 한국기계연구원
Priority to KR1020150119502A priority Critical patent/KR101765325B1/en
Publication of KR20170024635A publication Critical patent/KR20170024635A/en
Application granted granted Critical
Publication of KR101765325B1 publication Critical patent/KR101765325B1/en

Links

Images

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
    • B29C33/00—Moulds or cores; Details thereof or accessories therefor
    • B29C33/38—Moulds or cores; Details thereof or accessories therefor characterised by the material or the manufacturing process
    • B29C33/3842—Manufacturing moulds, e.g. shaping the mould surface by machining
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
    • B29C33/00—Moulds or cores; Details thereof or accessories therefor
    • B29C33/38—Moulds or cores; Details thereof or accessories therefor characterised by the material or the manufacturing process
    • B29C33/3807—Resin-bonded materials, e.g. inorganic particles
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
    • B29C59/00—Surface shaping of articles, e.g. embossing; Apparatus therefor
    • B29C59/16—Surface shaping of articles, e.g. embossing; Apparatus therefor by wave energy or particle radiation, e.g. infrared heating
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0002—Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Mechanical Engineering (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Shaping Of Tube Ends By Bending Or Straightening (AREA)

Abstract

The present invention relates to a method of manufacturing a mold using a laser positive pattern, and includes a thin film forming step, a positive pattern forming step, and a pattern forming step for a mold. The thin film forming step forms a polymer thin film on a substrate. The embossing pattern forming step irradiates the polymer thin film with a laser beam having an energy density lower than the ablation threshold point at which the polymer thin film is ablated to form a relief pattern expanding from the surface of the polymer thin film. In the pattern formation step for the mold, the polymer thin film is etched to form a pattern for a mold having a size smaller than the relief pattern on the substrate, and the pattern for the mold is formed while the relief pattern is etched.

Description

BACKGROUND OF THE INVENTION 1. Field of the Invention [0001] The present invention relates to a method of manufacturing a mold using a laser embossed pattern,

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method of manufacturing a mold using a laser positive pattern and a method of manufacturing a mold using a laser positive pattern for manufacturing a mold used in an imprint process using a positive pattern formed on a polymer thin film irradiated with a laser beam.

Semiconductors, liquid crystal devices and flat panel display devices using organic light emitting devices, which are currently used in the digital age, include a plurality of thin film patterns.

The thin film pattern is mainly formed by using a photolithography process, an imprint process, or the like. In the photolithography process, a photoresist pattern is formed through an exposure and development process using a photomask, and then an etching process is performed to form a pattern. Complex, and hence time and cost.

In the imprint process, it is important to form a fine pattern on the surface of a mold in order to manufacture an electronic device or manufacture a metal wiring or the like. Typical methods for forming the pattern are etching, e-beam machining, and diamond lathe machining. In the case of the etching method, since the pattern is formed by etching the metal after coating the metal and the photosensitive agent, the depth is limited. In the case of e-beam machining, it is possible to form fine patterns, but there is a problem that a fine pattern can not be formed in a large area due to a long processing time and a limited amount of processing. In the case of diamond lathe machining, there is a problem that it is difficult to perform two-dimensional freeform machining due to the machining characteristics.

In the method of manufacturing the mold used in the imprinting process, there is a method of using laser processing. However, in most cases, the mask must be re-manufactured every time the pattern is changed in the method of utilizing the mask, There is a problem that it is difficult to form a fine pattern on the mold due to the limitation of the spot size of the laser beam or the like.

Korean Registered Patent No. 0815361 (registered on Mar. 13, 2008, entitled "

SUMMARY OF THE INVENTION Accordingly, it is an object of the present invention to solve the above-mentioned problems of the prior art, and an object of the present invention is to provide a method of manufacturing a micro- The present invention provides a mold manufacturing method using a laser embossing pattern capable of finely forming the shape of a pattern to be formed on a mold and shortening the entire process time.

According to another aspect of the present invention, there is provided a method of manufacturing a mold using a laser embossing pattern, comprising: forming a polymer thin film on a substrate; Irradiating the polymer thin film with a laser beam having an energy density exceeding an expansion critical point at which the polymer thin film is inflated and an energy density lower than an ablation critical point at which the polymer thin film is ablated, An embossed pattern forming step of forming an embossed pattern; And forming a pattern for a mold having a size smaller than the relief pattern on the substrate by etching the polymer thin film and the relief pattern, wherein in the pattern formation step for the mold, the relief pattern is partially And is converted into the pattern for a mold while being etched.

In the method of manufacturing a mold using a laser positive pattern according to the present invention, the energy density of the laser beam may be set in a range of 40% to 95% of the ablation critical point.

In the method of manufacturing a mold using a laser positive pattern according to the present invention, the energy density of the laser beam may be set in a range of 80% to 90% of the ablation critical point.

In the method of manufacturing a mold using the laser positive pattern according to the present invention, the polymer thin film may include PEDOT: PSS or P3HT: PCBM.

The method may further include forming a conductive thin film on the upper surface of the substrate, wherein the conductive thin film is formed before the thin film forming step in the method of manufacturing a mold using the laser positive pattern according to the present invention.

In the method for manufacturing a mold using a laser positive pattern according to the present invention, in the forming of the positive pattern, the positive pattern may be formed by a laser direct writing method of directly irradiating the polymer thin film with a laser beam have.

In the method of manufacturing a mold using a laser positive pattern according to the present invention, in the pattern forming step for the mold, the polymer thin film and the relief pattern may be etched by a solvent or a plasma.

According to the mold manufacturing method using the laser embossing pattern of the present invention, the shape of the pattern to be formed on the mold can be finely formed.

Further, according to the mold manufacturing method using the laser embossing pattern of the present invention, it is possible to easily manufacture the mold without complicated processes such as photolithography process, and the whole process time and cost can be saved.

In addition, according to the mold manufacturing method using the laser embossing pattern of the present invention, even if the pattern to be formed on the mold is changed, it is possible to do without adding the cost to reproduce the mask. You can draw patterns of varying heights while changing the density.

FIG. 1 is a view showing an example of a laser processing apparatus for implementing a mold manufacturing method using the laser embossing pattern of the present invention,
2 is a flowchart of a method of manufacturing a mold using a laser embossing pattern according to an embodiment of the present invention,
FIG. 3 is a view schematically showing a mold manufacturing method using the laser positive pattern of FIG. 2,
4 is a view for explaining the polymer chain arrangement in the polymer thin film before and after the irradiation of the laser beam,
5 is a graph showing a change in the height of the embossed pattern according to the energy density of the laser beam,
6 is a view schematically showing a step of forming a relief pattern in a mold manufacturing method using a laser emboss pattern according to another embodiment of the present invention.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, embodiments of a method for manufacturing a mold using a laser embossing pattern according to the present invention will be described in detail with reference to the accompanying drawings.

1 is a view showing an example of a laser processing apparatus for implementing a mold manufacturing method using the laser embossing pattern of the present invention.

1, a laser processing apparatus 10 for implementing a mold manufacturing method using a laser embossing pattern according to the present invention includes a laser output unit 11, a beam transmitting optical system 12, A galvanometer scanner 14, a condenser lens 15, and a substrate support 16, as shown in FIG.

The laser output unit 11 is a device for outputting a laser beam L. The power and frequency of the laser beam L output under the control of a control unit (not shown) are adjusted.

The beam transmitting optical system 12 may include a mirror for reflecting the laser beam L to change its path, a beam expander for enlarging the beam size, a beam attenuator for attenuating the power of the laser beam L, and the like .

The beam deforming unit 13 is a beam shaping optical system for transmitting the laser beam L to the galvanometer scanner 14 and changing the energy distribution of the laser beam L or a single laser beam L ) Into a plurality of laser beams (L).

The shape of the grating formed on the diffractive optical element, the interval of the gratings, the shape of the cross section, and the like can be variously modified as needed. The number of the laser beams L passing through the diffractive optical element is divided according to the interval or the specific shape of the gratings formed in the diffractive optical element, and it is determined at which interval the laser beam L is divided.

Since the plurality of light beams are generated by dividing the laser beam L by the diffractive optical element, a plurality of spot-shaped laser beams L are irradiated to the work 1 to form a plurality of patterns at the same time, have.

The galvanometer scanner 14 generally comprises a mirror for reflecting the laser beam L and a mirror rotating means for rotating the mirror. The galvanometer scanner 14 reflects a laser beam L transmitted from the outside using a mirror rotated by a mirror rotating means and irradiates the laser beam L at a desired position on the work 1. [

The galvanometer scanner 14 typically includes a pair of galvanometer scanners, that is, an x-axis galvanometer scanner 14a capable of processing a continuous pattern on the x-axis, and a continuous pattern on the y- And a y-axis galvanometer scanner 14b which can be machined. It is possible to irradiate the laser beam L to a desired position on two axes using the two galvanometer scanners 14. [

The condenser lens 15 is for collecting the light transmitted from the galvanometer scanner 14 and irradiating the work 1 placed on the substrate supporter 16 with an F-setter lens or an F-setter telecentric f lt; RTI ID = 0.0 > telecentric < / RTI >

FIG. 2 is a flowchart of a method of manufacturing a mold using a laser embossing pattern according to an embodiment of the present invention, FIG. 3 is a view schematically showing a mold making method using the laser embossing pattern of FIG. 2, FIG. 5 is a graph showing changes in the height of the embossed pattern according to the energy density of the laser beam. FIG. 5 is a graph showing the arrangement of the polymer chains in the polymer thin film before and after irradiation.

2 to 5, a method of manufacturing a mold using a laser embossing pattern according to this embodiment includes forming a relief pattern 40 by irradiating the polymer thin film 30 with a laser beam L, A thin film forming step S20, an embossing pattern forming step S30, and a mold pattern forming step S30 to form a mold pattern 50 by etching the substrate 40, Forming step S40.

In the substrate preparation step (S10), a conductive thin film (21) is formed on the upper surface of the substrate (20).

When the polymer thin film 30 is formed directly on the substrate 20 without the conductive thin film 21 and then the laser beam L is irradiated on the surface of the polymer thin film 30 depending on the material of the polymer thin film 30, The relief pattern 40 may not be formed from the relief pattern 40 and may not be formed at a desired height even if the relief pattern 40 is formed.

Therefore, it is preferable that the conductive thin film 21 is formed on the upper surface of the substrate 20, and then the polymer thin film 30 is formed on the conductive thin film 21. The conductive thin film 21 formed in the substrate preparation step S10 of the present embodiment may be formed of a material such as ITO.

The substrate 20 of this embodiment can be a variety of substrates that can be used in a semiconductor device such as a glass substrate, a silicon substrate, a flat panel display device, and the like.

The thin film forming step (S20) forms the polymer thin film (30) on the substrate (20).

The polymer thin film 30 formed on the substrate 20 is a thin film formed by irradiating a laser beam L to form a relief pattern 40. The thin film 30 is made of a conductive polymer such as P3HT: PCBM or PEDOT: PSS .

The relief pattern forming step S30 irradiates the polymer thin film 30 with a laser beam L to form a relief pattern 40 that expands from the surface of the polymer thin film 30. [

The polymer thin film 30 in the region irradiated with the laser beam L is expanded, and the expanded portion becomes the boss pattern 40 immediately. 3, when the linear positive embossing pattern 40 is formed and irradiated while advancing the laser beam L in one direction, the laser beam L is irradiated along the direction in which the laser beam L advances, The polymer thin film 30 in the irradiated region expands and protrudes to form a linear positive embossing pattern 40.

The relief pattern 40 may vary depending on the energy density and time of the laser beam L to be irradiated and the height of the relief pattern 40 may be varied from below the thickness of the polymer thin film 30 to several times the thickness of the polymer thin film 30. [ Can be protruded.

As shown in FIG. 4 (a), the polymer chain C and the nanoparticles P in the polymer thin film 30 may be randomly dispersed before the laser beam L is irradiated, After the laser beam L is irradiated, the polymer chains C are aligned in one direction to form a plurality of linear polymer groups G aligned in one direction as shown in (b) of FIG.

Therefore, the portion of the polymer thin film 30 irradiated with the laser beam L is protruded from the portion to which the laser beam L is not irradiated while the arrangement form of the polymer chain C changes, have.

The laser beam L has an energy density less than an ablation threshold E1 that the polymer thin film 30 is ablated and an expansion threshold E2 or more at which the polymer thin film 30 can be expanded The polymer thin film 30 is irradiated at an energy density.

The ablation critical point E1 is an energy density of the laser beam L from which the polymer thin film 30 starts to be removed and may vary depending on the reflectance, absorption rate or bonding structure of the material of the polymer thin film 30 and strength. The expansion critical point E2 is the energy density of the laser beam L at which the polymer thin film 30 starts to expand and is the energy density of the laser beam L having an energy density lower than the expansion critical point E2 as shown in Fig. When the polymer thin film 30 is irradiated, the relief pattern 40 can not be formed from the polymer thin film 30.

The polymer thin film 30 is removed at the energy density equal to or higher than the ablation threshold point E1 so that the energy density of the ablation critical point E1 is 100% The thin film 30 is irradiated. Preferably, the polymer thin film 30 is irradiated with 80% to 90% of the energy density of the ablation critical point E1.

At this time, the laser beam L may be a Gaussian beam in which the intensity distribution of the cross section of the laser beam is high at the center portion and lower at the peripheral portion. In addition, the laser beam L may be another type of laser beam, such as a flat-top, and similar characteristics can be obtained even when irradiated with a laser beam output different from that of a Gaussian beam.

The laser beam L is a very short pulse with a pulse duration of less than 1 ns and the wavelength can be less than 3,000 nm. Preferably, the pulse duration of the laser beam L is an ultrashort pulse of less than 100 ps, and the wavelength may be between 250 nm and 2,100 nm. At this time, in order to reduce the processing time of the relief pattern 40, it is preferable to irradiate so as to have a pulse repetition rate of 100 kHz or more.

In the embossed pattern forming step S30 of the present embodiment, it is preferable to form the relief pattern 40 by a laser direct writing method in which the polymer thin film 30 is directly irradiated with the laser beam L . When the laser beam L is irradiated using the mask, it is inconvenient to re-manufacture the mask every time the pattern is changed. However, when the positive pattern 40 is formed by the laser direct imaging system, And it is also possible to draw patterns of various heights while changing the energy density of the laser beam L and patterns of various shapes in one mold.

In the pattern forming step S40 for the mold, the polymer thin film 30 is etched to form a mold pattern 50 having a size smaller than the relief pattern 40 on the substrate 20. [

The embossed pattern 40 formed in the embossing pattern forming step S30 is cured by light while the laser beam L is irradiated and the physical and chemical properties are changed. In this state, when the relief pattern 40 and the portion of the polymer thin film 30 on which the relief pattern 40 is not formed are etched by using the solvent or the plasma, the polymer thin film 30, which is not irradiated with the laser beam L, The portion is entirely removed, and the relief pattern 40 is partially removed, but the remaining portion is not removed.

Some of the relief patterns 40 left unremoved in this manner can be pattern patterns 50 of a smaller size than the relief patterns 40 formed in the relief pattern formation step S30. The mold pattern 50 thus formed can be a protrusion of the mold that can be used in the imprint process.

As the technique is gradually developed, a fine pattern size smaller than the relief pattern 40, which can be formed in the relief pattern formation step S30 of the present embodiment, may be technically required. In this embodiment, a mold having a fine size pattern can be easily manufactured by sequentially performing the relief pattern forming step (S30) and the mold pattern forming step (S40).

The size of the pattern 50 for the mold can be adjusted by adjusting the concentration of the solvent used for etching, the intensity of the plasma, the time for which the positive pattern 40 is exposed to the solvent or the plasma, and the like.

Meanwhile, FIG. 6 is a view schematically showing a step of forming an emboss pattern in a mold manufacturing method using a laser embossing pattern according to another embodiment of the present invention.

In Fig. 6, the members denoted by the same reference numerals as those shown in Figs. 1 to 5 have the same configuration and function, and a detailed description thereof will be omitted.

Referring to FIG. 6, in the method of fabricating a mold using the laser embossing pattern according to the present embodiment, the embossing patterns 40 'may be formed in a plurality of dot shapes spaced apart by a predetermined distance.

When the laser beam L is irradiated while being jumped while advancing the laser beam L in one direction, the polymer thin film 30 is expanded only at the portion irradiated with the laser beam L along the direction in which the laser beam L advances, The embossed pattern 40 'of the point shape can be formed.

In the method of manufacturing a mold using the laser embossing pattern of the present invention constructed as described above, a laser beam is irradiated to a polymer thin film to expand a polymer thin film to form a positive embossing pattern, and then the positive embossing pattern is etched to form a fine mold pattern , It is possible to obtain an effect that the shape of the pattern formed on the mold can be finely formed.

In addition, the mold manufacturing method using the laser embossing pattern of the present invention constructed as described above can easily manufacture a mold without complicated processes such as a photolithography process, and can reduce the entire process time and cost Effect can be obtained.

Further, in the mold manufacturing method using the laser embossing pattern of the present invention constructed as described above, even if the pattern to be formed on the mold is changed by forming the relief pattern by the laser direct drawing method, In addition, it is possible to draw patterns of various heights while changing patterns of various shapes and energy density of the laser beam even in one mold.

The scope of the present invention is not limited to the above-described embodiments and modifications, but can be implemented in various forms of embodiments within the scope of the appended claims. It will be understood by those skilled in the art that various changes in form and details may be made therein without departing from the spirit and scope of the present invention as defined by the appended claims.

S10: Substrate preparation step
S20: thin film forming step
S30: Embossed pattern formation step
S40: pattern formation step for mold
20: substrate
30: polymer thin film
40: Embossed pattern
50: pattern for mold

Claims (7)

A thin film forming step of forming a polymer thin film on a substrate;
Irradiating the polymer thin film with a laser beam having an energy density exceeding an expansion critical point at which the polymer thin film is inflated and an energy density lower than an ablation critical point at which the polymer thin film is ablated, An embossed pattern forming step of forming an embossed pattern; And
And forming a mold pattern having a size smaller than the relief pattern on the substrate by etching the polymer thin film and the relief pattern,
Wherein the positive pattern is partially etched and converted into the pattern for the mold in the pattern forming step for the mold. The method according to claim 1,
Wherein the energy density of the laser beam is set in a range of 40% to 95% of the ablation critical point. 3. The method of claim 2,
Wherein the energy density of the laser beam is set in a range of 80% to 90% of the ablation critical point. The method according to claim 1,
Wherein the polymer thin film comprises PEDOT: PSS or P3HT: PCBM. The method according to claim 1,
And forming a conductive thin film on the upper surface of the substrate, wherein the conductive thin film is formed before the thin film forming step. The method according to claim 1,
In the embossed pattern forming step,
Wherein the positive pattern is formed by a laser direct writing method for directly irradiating a laser beam onto the polymer thin film. The method according to claim 1,
In the pattern formation step for the mold,
Wherein the polymer thin film and the relief pattern are etched by a solvent or a plasma.
KR1020150119502A 2015-08-25 2015-08-25 Method for manufacturing mold using embossed pattern by laser KR101765325B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1020150119502A KR101765325B1 (en) 2015-08-25 2015-08-25 Method for manufacturing mold using embossed pattern by laser

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020150119502A KR101765325B1 (en) 2015-08-25 2015-08-25 Method for manufacturing mold using embossed pattern by laser

Publications (2)

Publication Number Publication Date
KR20170024635A KR20170024635A (en) 2017-03-08
KR101765325B1 true KR101765325B1 (en) 2017-08-09

Family

ID=58403975

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020150119502A KR101765325B1 (en) 2015-08-25 2015-08-25 Method for manufacturing mold using embossed pattern by laser

Country Status (1)

Country Link
KR (1) KR101765325B1 (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20210069961A1 (en) * 2018-06-15 2021-03-11 Hewlett-Packard Development Company, L.P. Radiative embossing detailing fluid
WO2019240820A1 (en) * 2018-06-15 2019-12-19 Hewlett-Packard Development Company, L.P. Radiation embossable coated print media

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100815361B1 (en) 2007-01-31 2008-03-19 삼성전기주식회사 Process for manufacturing printed circuit board

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100815361B1 (en) 2007-01-31 2008-03-19 삼성전기주식회사 Process for manufacturing printed circuit board

Also Published As

Publication number Publication date
KR20170024635A (en) 2017-03-08

Similar Documents

Publication Publication Date Title
JP4180654B2 (en) Method and apparatus for step-and-repeat exposure
US6783920B2 (en) Photosensitive glass variable laser exposure patterning method
US7482052B2 (en) Method for processing by laser, apparatus for processing by laser, and three-dimensional structure
JP5000603B2 (en) Nano pattern forming apparatus and nano pattern forming method using the same
Naessens et al. Flexible fabrication of microlenses in polymer layers with excimer laser ablation
CN105549328B (en) The method that three-dimensional structure is manufactured in material is etched
JP4158481B2 (en) Laser processing method and apparatus, and drilling method using the apparatus
WO2009070434A1 (en) Methods for forming sheeting with a composite image that floats and a master tooling
US20150301444A1 (en) Systems and methods for dry processing fabrication of binary masks with arbitrary shapes for ultra-violet laser micromachining
JP2008126283A (en) Manufacturing method of microstructure and exposure method
JP2007527326A (en) Ultrafast laser direct writing method to modify existing submicron scale microstructures
JP2006068762A (en) Method and apparatus of laser beam machining
CN1259171C (en) Femtosecond frequency multiplication laser direct writing system and micromachining method
KR101765325B1 (en) Method for manufacturing mold using embossed pattern by laser
CN102950382A (en) Laser direct writing etching system for etching electronically-controlled diffraction optical devices, and method thereof
JP2006110587A (en) Laser interference machining method and device
Lim et al. Sub-micron surface patterning by laser irradiation through microlens arrays
Zimmer et al. Combination of different processing methods for the fabrication of 3D polymer structures by excimer laser machining
US8585390B2 (en) Mold making system and mold making method
Schmidt Laser-based micro-and nano-fabrication of photonic structures
Zaverton et al. Maskless lithography tool for fabrication and inspection of diffractive optical elements and computer generated holograms
JP2002292488A (en) Laser processing apparatus and laser processing method
JP2008003502A (en) Exposure method, method for forming pattern and method for manufacturing optical element
KR101200484B1 (en) Mask for projection ablation and manufacturing method thereof
JP2006227609A (en) Exposure method, method for forming irregular pattern, and method for manufacturing optical element

Legal Events

Date Code Title Description
A201 Request for examination
E902 Notification of reason for refusal
E701 Decision to grant or registration of patent right