KR20170024635A - Method for manufacturing mold using embossed pattern by laser - Google Patents
Method for manufacturing mold using embossed pattern by laser Download PDFInfo
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- KR20170024635A KR20170024635A KR1020150119502A KR20150119502A KR20170024635A KR 20170024635 A KR20170024635 A KR 20170024635A KR 1020150119502 A KR1020150119502 A KR 1020150119502A KR 20150119502 A KR20150119502 A KR 20150119502A KR 20170024635 A KR20170024635 A KR 20170024635A
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- South Korea
- Prior art keywords
- thin film
- pattern
- mold
- polymer thin
- laser beam
- Prior art date
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- 238000000034 method Methods 0.000 title claims abstract description 38
- 238000004519 manufacturing process Methods 0.000 title abstract description 38
- 239000010409 thin film Substances 0.000 claims abstract description 77
- 229920000642 polymer Polymers 0.000 claims abstract description 62
- 239000000758 substrate Substances 0.000 claims abstract description 25
- 238000002679 ablation Methods 0.000 claims abstract description 12
- 238000005530 etching Methods 0.000 claims abstract description 12
- 230000001678 irradiating effect Effects 0.000 claims description 7
- 230000007261 regionalization Effects 0.000 claims description 5
- 239000002904 solvent Substances 0.000 claims description 5
- 229920000144 PEDOT:PSS Polymers 0.000 claims description 3
- MCEWYIDBDVPMES-UHFFFAOYSA-N [60]pcbm Chemical compound C123C(C4=C5C6=C7C8=C9C%10=C%11C%12=C%13C%14=C%15C%16=C%17C%18=C(C=%19C=%20C%18=C%18C%16=C%13C%13=C%11C9=C9C7=C(C=%20C9=C%13%18)C(C7=%19)=C96)C6=C%11C%17=C%15C%13=C%15C%14=C%12C%12=C%10C%10=C85)=C9C7=C6C2=C%11C%13=C2C%15=C%12C%10=C4C23C1(CCCC(=O)OC)C1=CC=CC=C1 MCEWYIDBDVPMES-UHFFFAOYSA-N 0.000 claims description 3
- 229920000301 poly(3-hexylthiophene-2,5-diyl) polymer Polymers 0.000 claims description 3
- 239000010408 film Substances 0.000 abstract 1
- 238000004049 embossing Methods 0.000 description 25
- 230000003287 optical effect Effects 0.000 description 7
- 238000003754 machining Methods 0.000 description 6
- 238000000206 photolithography Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 238000002360 preparation method Methods 0.000 description 3
- 229910003460 diamond Inorganic materials 0.000 description 2
- 239000010432 diamond Substances 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 241001270131 Agaricus moelleri Species 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 229920001940 conductive polymer Polymers 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000002105 nanoparticle Substances 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 238000007493 shaping process Methods 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Images
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
- B29C33/00—Moulds or cores; Details thereof or accessories therefor
- B29C33/38—Moulds or cores; Details thereof or accessories therefor characterised by the material or the manufacturing process
- B29C33/3842—Manufacturing moulds, e.g. shaping the mould surface by machining
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
- B29C33/00—Moulds or cores; Details thereof or accessories therefor
- B29C33/38—Moulds or cores; Details thereof or accessories therefor characterised by the material or the manufacturing process
- B29C33/3807—Resin-bonded materials, e.g. inorganic particles
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
- B29C59/00—Surface shaping of articles, e.g. embossing; Apparatus therefor
- B29C59/16—Surface shaping of articles, e.g. embossing; Apparatus therefor by wave energy or particle radiation, e.g. infrared heating
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/0002—Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Mechanical Engineering (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Shaping Of Tube Ends By Bending Or Straightening (AREA)
Abstract
Description
BACKGROUND OF THE
Semiconductors, liquid crystal devices and flat panel display devices using organic light emitting devices, which are currently used in the digital age, include a plurality of thin film patterns.
The thin film pattern is mainly formed by using a photolithography process, an imprint process, or the like. In the photolithography process, a photoresist pattern is formed through an exposure and development process using a photomask, and then an etching process is performed to form a pattern. Complex, and hence time and cost.
In the imprint process, it is important to form a fine pattern on the surface of a mold in order to manufacture an electronic device or manufacture a metal wiring or the like. Typical methods for forming the pattern are etching, e-beam machining, and diamond lathe machining. In the case of the etching method, since the pattern is formed by etching the metal after coating the metal and the photosensitive agent, the depth is limited. In the case of e-beam machining, it is possible to form fine patterns, but there is a problem that a fine pattern can not be formed in a large area due to a long processing time and a limited amount of processing. In the case of diamond lathe machining, there is a problem that it is difficult to perform two-dimensional freeform machining due to the machining characteristics.
In the method of manufacturing the mold used in the imprinting process, there is a method of using laser processing. However, in most cases, the mask must be re-manufactured every time the pattern is changed in the method of utilizing the mask, There is a problem that it is difficult to form a fine pattern on the mold due to the limitation of the spot size of the laser beam or the like.
SUMMARY OF THE INVENTION Accordingly, it is an object of the present invention to solve the above-mentioned problems of the prior art, and an object of the present invention is to provide a method of manufacturing a micro- The present invention provides a mold manufacturing method using a laser embossing pattern capable of finely forming the shape of a pattern to be formed on a mold and shortening the entire process time.
According to another aspect of the present invention, there is provided a method of manufacturing a mold using a laser embossing pattern, comprising: forming a polymer thin film on a substrate; An emboss pattern forming step of irradiating the polymer thin film with a laser beam having an energy density lower than an ablation threshold point at which the polymer thin film is ablated to form a relief pattern expanding from the surface of the polymer thin film; And a mold pattern forming step of forming a mold pattern having a size smaller than the relief pattern on the substrate by etching the polymer thin film, wherein the mold pattern is formed by etching the relief pattern .
In the method of manufacturing a mold using a laser positive pattern according to the present invention, the energy density of the laser beam may be set in a range of 40% to 95% of the ablation critical point.
In the method of manufacturing a mold using a laser positive pattern according to the present invention, the energy density of the laser beam may be set in a range of 80% to 90% of the ablation critical point.
In the method of manufacturing a mold using the laser positive pattern according to the present invention, the polymer thin film may include PEDOT: PSS or P3HT: PCBM.
The method may further include forming a conductive thin film on the upper surface of the substrate, wherein the conductive thin film is formed before the thin film forming step in the method of manufacturing a mold using the laser positive pattern according to the present invention.
In the method for manufacturing a mold using a laser positive pattern according to the present invention, in the forming of the positive pattern, the positive pattern may be formed by a laser direct writing method of directly irradiating the polymer thin film with a laser beam have.
In the method for manufacturing a mold using a laser positive pattern according to the present invention, in the pattern forming step for the mold, the polymer thin film may be etched by a solvent or a plasma.
According to the mold manufacturing method using the laser embossing pattern of the present invention, the shape of the pattern to be formed on the mold can be finely formed.
Further, according to the mold manufacturing method using the laser embossing pattern of the present invention, it is possible to easily manufacture the mold without complicated processes such as photolithography process, and the whole process time and cost can be saved.
In addition, according to the mold manufacturing method using the laser embossing pattern of the present invention, even if the pattern to be formed on the mold is changed, it is possible to do without adding the cost to reproduce the mask. You can draw patterns of varying heights while changing the density.
FIG. 1 is a view showing an example of a laser processing apparatus for implementing a mold manufacturing method using the laser embossing pattern of the present invention,
2 is a flowchart of a method of manufacturing a mold using a laser embossing pattern according to an embodiment of the present invention,
FIG. 3 is a view schematically showing a mold manufacturing method using the laser positive pattern of FIG. 2,
4 is a view for explaining the polymer chain arrangement in the polymer thin film before and after the irradiation of the laser beam,
5 is a graph showing a change in the height of the embossed pattern according to the energy density of the laser beam,
6 is a view schematically showing a step of forming a relief pattern in a mold manufacturing method using a laser emboss pattern according to another embodiment of the present invention.
DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, embodiments of a method for manufacturing a mold using a laser embossing pattern according to the present invention will be described in detail with reference to the accompanying drawings.
1 is a view showing an example of a laser processing apparatus for implementing a mold manufacturing method using the laser embossing pattern of the present invention.
1, a
The
The beam transmitting
The
The shape of the grating formed on the diffractive optical element, the interval of the gratings, the shape of the cross section, and the like can be variously modified as needed. The number of the laser beams L passing through the diffractive optical element is divided according to the interval or the specific shape of the gratings formed in the diffractive optical element, and it is determined at which interval the laser beam L is divided.
Since the plurality of light beams are generated by dividing the laser beam L by the diffractive optical element, a plurality of spot-shaped laser beams L are irradiated to the
The
The
The
FIG. 2 is a flowchart of a method of manufacturing a mold using a laser embossing pattern according to an embodiment of the present invention, FIG. 3 is a view schematically showing a mold making method using the laser embossing pattern of FIG. 2, FIG. 5 is a graph showing changes in the height of the embossed pattern according to the energy density of the laser beam. FIG. 5 is a graph showing the arrangement of the polymer chains in the polymer thin film before and after irradiation.
2 to 5, a method of manufacturing a mold using a laser embossing pattern according to this embodiment includes forming a
In the substrate preparation step (S10), a conductive thin film (21) is formed on the upper surface of the substrate (20).
When the polymer
Therefore, it is preferable that the conductive
The
The thin film forming step (S20) forms the polymer thin film (30) on the substrate (20).
The polymer
The relief pattern forming step S30 irradiates the polymer
The polymer
The
As shown in FIG. 4 (a), the polymer chain C and the nanoparticles P in the polymer
Therefore, the portion of the polymer
The laser beam L has an energy density less than an ablation threshold E1 that the polymer
The ablation critical point E1 is an energy density of the laser beam L from which the polymer
The polymer
At this time, the laser beam L may be a Gaussian beam in which the intensity distribution of the cross section of the laser beam is high at the center portion and lower at the peripheral portion. In addition, the laser beam L may be another type of laser beam, such as a flat-top, and similar characteristics can be obtained even when irradiated with a laser beam output different from that of a Gaussian beam.
The laser beam L is a very short pulse with a pulse duration of less than 1 ns and the wavelength can be less than 3,000 nm. Preferably, the pulse duration of the laser beam L is an ultrashort pulse of less than 100 ps, and the wavelength may be between 250 nm and 2,100 nm. At this time, in order to reduce the processing time of the
In the embossed pattern forming step S30 of the present embodiment, it is preferable to form the
In the pattern forming step S40 for the mold, the polymer
The
Some of the
As the technique is gradually developed, a fine pattern size smaller than the
The size of the
Meanwhile, FIG. 6 is a view schematically showing a step of forming an emboss pattern in a mold manufacturing method using a laser embossing pattern according to another embodiment of the present invention.
In Fig. 6, the members denoted by the same reference numerals as those shown in Figs. 1 to 5 have the same configuration and function, and a detailed description thereof will be omitted.
Referring to FIG. 6, in the method of fabricating a mold using the laser embossing pattern according to the present embodiment, the embossing patterns 40 'may be formed in a plurality of dot shapes spaced apart by a predetermined distance.
When the laser beam L is irradiated while being jumped while advancing the laser beam L in one direction, the polymer
In the method of manufacturing a mold using the laser embossing pattern of the present invention constructed as described above, a laser beam is irradiated to a polymer thin film to expand a polymer thin film to form a positive embossing pattern, and then the positive embossing pattern is etched to form a fine mold pattern , It is possible to obtain an effect that the shape of the pattern formed on the mold can be finely formed.
In addition, the mold manufacturing method using the laser embossing pattern of the present invention constructed as described above can easily manufacture a mold without complicated processes such as a photolithography process, and can reduce the entire process time and cost Effect can be obtained.
Further, in the mold manufacturing method using the laser embossing pattern of the present invention constructed as described above, even if the pattern to be formed on the mold is changed by forming the relief pattern by the laser direct drawing method, In addition, it is possible to draw patterns of various heights while changing patterns of various shapes and energy density of the laser beam even in one mold.
The scope of the present invention is not limited to the above-described embodiments and modifications, but can be implemented in various forms of embodiments within the scope of the appended claims. It will be understood by those skilled in the art that various changes in form and details may be made therein without departing from the spirit and scope of the present invention as defined by the appended claims.
S10: Substrate preparation step
S20: thin film forming step
S30: Embossed pattern formation step
S40: pattern formation step for mold
20: substrate
30: polymer thin film
40: Embossed pattern
50: pattern for mold
Claims (7)
An emboss pattern forming step of irradiating the polymer thin film with a laser beam having an energy density lower than an ablation threshold point at which the polymer thin film is ablated to form a relief pattern expanding from the surface of the polymer thin film; And
And forming a mold pattern having a size smaller than the relief pattern on the substrate by etching the polymer thin film,
Wherein the mold pattern is formed by etching the relief pattern.
Wherein the energy density of the laser beam is set in a range of 40% to 95% of the ablation critical point.
Wherein the energy density of the laser beam is set in a range of 80% to 90% of the ablation critical point.
Wherein the polymer thin film comprises PEDOT: PSS or P3HT: PCBM.
And forming a conductive thin film on the upper surface of the substrate, wherein the conductive thin film is formed before the thin film forming step.
In the embossed pattern forming step,
Wherein the positive pattern is formed by a laser direct writing method for directly irradiating a laser beam onto the polymer thin film.
In the pattern formation step for the mold,
Wherein the polymer thin film is etched by a solvent or a plasma.
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KR1020150119502A KR101765325B1 (en) | 2015-08-25 | 2015-08-25 | Method for manufacturing mold using embossed pattern by laser |
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KR1020150119502A KR101765325B1 (en) | 2015-08-25 | 2015-08-25 | Method for manufacturing mold using embossed pattern by laser |
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KR101765325B1 KR101765325B1 (en) | 2017-08-09 |
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2019240820A1 (en) * | 2018-06-15 | 2019-12-19 | Hewlett-Packard Development Company, L.P. | Radiation embossable coated print media |
WO2019240813A1 (en) * | 2018-06-15 | 2019-12-19 | Hewlett-Packard Development Company, L.P. | Radiative embossing detailing fluid |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100815361B1 (en) | 2007-01-31 | 2008-03-19 | 삼성전기주식회사 | Process for manufacturing printed circuit board |
-
2015
- 2015-08-25 KR KR1020150119502A patent/KR101765325B1/en active IP Right Grant
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100815361B1 (en) | 2007-01-31 | 2008-03-19 | 삼성전기주식회사 | Process for manufacturing printed circuit board |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2019240820A1 (en) * | 2018-06-15 | 2019-12-19 | Hewlett-Packard Development Company, L.P. | Radiation embossable coated print media |
WO2019240813A1 (en) * | 2018-06-15 | 2019-12-19 | Hewlett-Packard Development Company, L.P. | Radiative embossing detailing fluid |
Also Published As
Publication number | Publication date |
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KR101765325B1 (en) | 2017-08-09 |
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