CN102722091A - Two-beam interference photoetching method and system - Google Patents
Two-beam interference photoetching method and system Download PDFInfo
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- CN102722091A CN102722091A CN2012102296754A CN201210229675A CN102722091A CN 102722091 A CN102722091 A CN 102722091A CN 2012102296754 A CN2012102296754 A CN 2012102296754A CN 201210229675 A CN201210229675 A CN 201210229675A CN 102722091 A CN102722091 A CN 102722091A
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Abstract
The invention discloses a two-beam interference photoetching method and a two-beam interference photoetching system. The method comprises the following step of: realizing N times of interference exposure of two paths of beams on the surface of a processed workpiece, wherein the staggering value between two adjacent exposure positions is dI/N; N is more than or equal to 2; dI is the period of exposed light strength distribution; and the light field complex amplitude distribution after interference of the two paths of beams is a cosine function. According to the two-beam interference photoetching method disclosed by the invention, a big-width precision multi-step structure can be directly prepared on a photoresist, and the processing efficiency is high; and moreover, an adopted device is easy to obtain, and is low in cost.
Description
Technical field
The invention belongs to the interference lithography field, relate in particular to a kind of two-beam interference photoetching method and system.
Background technology
Many ledge structures are a kind of typical case and basic three-dimensional structure, have widespread use at numerous areas such as semiconductor, micro-optical device, MEMS (MEMS) and FPD.In these application scenarios; The requirement of step number, dimensional accuracy and the surfaceness of many ledge structures is all very low: the step number is generally 2 to 4 steps; The accuracy requirement of bench height size is about several microns to several microns of zero points, and the ledge surface roughness required about several microns of zero points.On job operation, can adopt accomplished in many ways such as mask lithography and laser direct-writing.
But, for some special applications, for example optical device with show field mutually such as vision, many ledge structures of the high precision ultra-smooth that needs to make below describe binary optical device and interference modulations display device.
Binary optical device is meant to have two embossment structures that reach with the degree of depth of topping bar, the one type of diffraction optical element that forms pure phase place, coaxial reproduction, has high diffraction efficiency.Binary optical device is the emerging field in the optical device; Realizing having the unapproachable excellent performance of many traditional optical devices in the light wave conversion, comprising high-diffraction efficiency, unique dispersion, huge design freedom, the material washability of broadness and special optical function.Simultaneously, binary optical device also is convenient to realize microminiaturization, the array and integrated of optical system.The step precision and the surfaceness of binary optical device have direct influence to its output light field distribution, diffraction efficiency and signal to noise ratio (S/N ratio).Analyze with typical 2 ledge structures: design wavelength is taken as 532 nanometers; The material refractive index is got representative value 1.5; Air refraction is 1.0, and then the ladder height of step is 532 nanometers, if permissible error is 10%; Then the scale error of bench height requires less than 53.2 nanometers, and the visible ten minutes that requires is harsh.
The interference modulations display device.Interference modulations display technique IMOD (Interferometric modulator display) is a kind of novel display technique; Do not need backlight based on this technological display device and display device; Have significant low power capabilities; And can under wide in range light environment, use, even if under strong solar radiation, the still clear Ruili of its display effect.The elementary cell of IMOD display device is the microstructure that two minute surfaces clip a space, the color that is reflected during this space decision irradiate light display.When the gauge in space equals a half of red light wavelength, then the ruddiness through the reflection of space upper and lower surfaces obtains to interfere and strengthens, and other color then is attenuated, thereby makes the redness that demonstrates of this unit.Utilize identical principle, the method through photoetching can realize colored no ink printing at many ledge structures of making wavelength magnitude.Obviously, the interference modulations display device also is that very high requirement is arranged to the dimensional accuracy and the surfaceness of many ledge structures.
Existing photoetching technique (comprising mask lithography, laser direct-writing and beamwriter lithography) only can be made many ledge structures of micron and sub-micrometer scale, is difficult to realize the control of the step degree of depth and the surfaceness requirement of tens nanometer scale.Main cause is that these photoetching techniques are difficult to the exposure light intensity is carried out so accurate control.Make a concrete analysis of as follows:
At first analyze mask lithography.Mask lithography adopts mercury lamp and LED as light emitting source, and light source is incident upon and carries out photoetching on the mask plate after carrying out the light field homogenising through devices such as collimated and microlens arrays.Usually the light intensity uniformity parameter of mask plate upper surface is about about 95%, and in theory, if photoresist thickness is 2um, then the theoretical numerical value of the step dimension precision of photoetching acquisition is about 100nm, and obtainable precision is lower under the actual conditions.Because in the near field transmission process of light field behind mask plate, the unevenness of light distribution sharply increases.In addition, because the luminophor of mercury lamp and LED is filament and fluorescent powder, small speckle and particle in its light field can't thoroughly be improved by light balancing device, and therefore the surfaceness of exposure is difficult to reach near the 20nm.In addition, mask lithography is as a kind of duplication process based on masterplate, and its processing flexibility is relatively poor.
Next analyzes laser direct-writing.First kind laser direct writing system adopts LASER Light Source, spatial light modulator and imaging optical path.Shown in ginseng Fig. 1 a and Fig. 1 b, because the limited aperture of its imaging optical path, the high-frequency information of its input light field is by filtering, and when causing its exposure to generate many ledge structures, the edge of step and end face all have ripple and fluctuating, and this phenomenon is called as the optics Gibbs phenomenon.
According to the information optics theoretical analysis; After increasing the aperture of optical system, the flatness of step only can obtain limited improvement, is embodied in; The ripple magnitude at step middle part reduces; Ripple finer and closely woven (cycle diminishes), ripple distribute and to shrink to step edge gradually, but the amplitude of ripple basicly stable total amplitude 10% near.Obviously, this is difficult to accept for the ledge structure of precision.What deserves to be mentioned is, increase the aperture of optical system, mean the rapid increase of system cost.
If, change the light source of system incoherent lights such as into mercury lamp and LED by laser, then run into the same problem of mask lithography.In addition, this moment, the steep property in edge of step was relatively poor, so the dutycycle of the obtainable ledge structure of photoetching is lower.
Another kind of laser direct writing system adopts LASER Light Source, beam flying device (deflection device in other words) and focused light passages.Its output light field is single focus point, and the accurate evenly stack through to focus point can realize above-mentioned accurate many ledge structures in theory.But its subject matter is the simple scan processing mode, and working (machining) efficiency is very low, and the equipment cost of the precision optics scanning device that adopts is very high.
At last, analytical electron bundle photoetching.The cost of electron-beam lithography system is very high, and working (machining) efficiency is extremely low.In addition, because the singularity of the exposure principle of electron beam, its exposure technology is unfavorable for obtaining the smooth finish surface of minute surface level.
Because photoetching technique is difficult to directly make the many ledge structures of above-mentioned precision, at present, the main stream approach of the actual employing of industrial circle is the method that lithography process combines chemical etching.This method; Control the X-Y scheme shape of step through the method (comprising mask lithography and laser direct-writing) of photoetching; And pass through chemical etching method; For example the degree of depth of the accurate control of reactive ion etching RIE (Reactive Ion Etching) step can obtain surface of good smooth finish simultaneously.The main deficiency of this method is: 1, two need repeatedly alignment to top bar, and technology is loaded down with trivial details; 2, the process time of chemical etching very long, efficient is low; 3, chemical etching needs vacuum environment, because the volume restrictions of vacuum cavity, its processing breadth is very limited.
In a word, existing job operation can't be made accurate many ledge structures of large format directly, efficiently, at low cost.
Summary of the invention
The present invention proposes a kind of two-beam interference photoetching method and system, can on photoresist, directly prepare accurate many ledge structures of large format, working (machining) efficiency is high, and cost is low, and the ledge surface of acquisition is smooth.
To achieve these goals, the technical scheme that provides of the application is following:
A kind of two-beam interference photoetching method, wherein, the two-way light beam realizes N time to interfere exposure on the processing work surface, the dislocation value between the adjacent double exposure position is d
I/ N, wherein, N>=2, d
IBe the cycle of the light distribution after the exposure, the light field COMPLEX AMPLITUDE behind the said two-way beam interference is a cosine function.
Correspondingly, the application also provides a kind of two-beam interference etching system, comprising:
LASER Light Source;
The beam-expanding collimation optical element will become directional light from the laser beam datum of LASER Light Source;
The optics template is in order to the size and the shape of control exposure area;
Beam splitter carries out beam split to laser beam;
Projection optics mirror group receives the laser beam after the said beam split and it is converged to the processing work surface and realizes interfering exposure, and the light field COMPLEX AMPLITUDE after the interference is a cosine function;
The wedge shape phase board, the dislocation value of controlling between the adjacent double exposure position is d
I/ N, wherein, N>=2, d
IBe the cycle of the light distribution after the exposure.
As a further improvement on the present invention, said optics template is mask or spatial light modulator.
As further improvement of the present invention, said beam splitter comprises phase grating.
As further improvement of the present invention, said phase grating suppresses 0 grade of light beam.
As further improvement of the present invention, said beam splitter also comprises diaphragm, and said diaphragm blocks 0 grade of light beam from said phase grating.
As further improvement of the present invention; Said projection optics mirror group comprises the first projection optics mirror group and the second projection optics mirror group; Said wedge shape phase board is between the said first projection optics mirror group and the second projection optics mirror group, and said wedge shape phase board is positioned on the light path of one of said two-way light beam.
As further improvement of the present invention, said two-beam interference system also comprises the Piezoelectric Ceramic device, and said wedge shape phase board is driven by this Piezoelectric Ceramic device.
Compared with prior art, the present invention adopts optics template projection-phase grating spectral interference light path.Phase grating will be imported directional light and carry out beam splitting, and multiple beam makes public on photoresist through projection optical system.Interfere the COMPLEX AMPLITUDE of exposure back light field to approach desirable cosine function, the influence that receives the optical system finite aperture is very little.Through the contraposition stack of multiexposure, multiple exposure, the total exposure intensity on photoresist is that flat-top distributes, and the ripple of total light intensity can be controlled in below 1%, thereby can obtain accurate ledge structure.On the roughness of the depth dimensions precision of step and ledge surface, obviously be superior to existing method.Through two-beam interference photoetching method of the present invention, can be on photoresist direct accurate many ledge structures of preparation large format, working (machining) efficiency is high, and the components and parts that adopted obtain easily, cost is low.
Description of drawings
In order to be illustrated more clearly in the embodiment of the invention or technical scheme of the prior art; To do to introduce simply to the accompanying drawing of required use in embodiment or the description of the Prior Art below; Obviously, the accompanying drawing in describing below only is some embodiments of the present invention, for those of ordinary skills; Under the prerequisite of not paying creative work, can also obtain other accompanying drawing according to these accompanying drawings.
Fig. 1 a is depicted as the optical field distribution figure that imports in the first kind laser direct writing system spatial light modulator in the prior art;
Fig. 1 b is depicted as the optical field distribution figure that is used for the actual output of photoetching in the prior art in the first kind laser direct writing system;
Shown in Figure 2 is the synoptic diagram of two-beam interference etching system in the first embodiment of the invention;
Shown in Figure 3 is the surface of intensity distribution of the double exposure of first embodiment of the invention two-beam interference etching system;
Shown in Figure 4 is the synoptic diagram of two-beam interference etching system in the second embodiment of the invention.
Embodiment
The present invention proposes a kind of job operation based on interference lithography and multiexposure, multiple exposure stack; Its basic thought is to utilize interference lithography to obtain the light distribution near desirable cosine type; Make the light intensity staggered superposition of cosine type through multiexposure, multiple exposure then; Thereby make that total light distribution is a horizontal linear, thereby obtain the ledge structure of flat-top.
In order to achieve the above object, the embodiment of the invention discloses a kind of two-beam interference photoetching method, the two-way light beam realizes N time to interfere exposure on the processing work surface, and the dislocation value between the adjacent double exposure position is d
I/ N, wherein, N>=2, d
IBe the cycle of the light distribution after the exposure, the light field COMPLEX AMPLITUDE behind the said two-way beam interference is a cosine function.
Correspondingly, the invention also discloses a kind of two-beam interference etching system, comprising:
LASER Light Source;
The beam-expanding collimation optical element will become directional light from the laser beam datum of LASER Light Source;
The optics template is in order to the size and the shape of control exposure area;
Beam splitter carries out beam split to laser beam;
Projection optics mirror group receives the laser beam after the said beam split and it is gathered the processing work surface realize interfering exposure, and the light field COMPLEX AMPLITUDE after the interference is a cosine function;
The wedge shape phase board, the dislocation value of controlling between the adjacent double exposure position is d
I/ N, wherein, N>=2, d
IBe the cycle of the light distribution after the exposure.
Two-beam interference photoetching method of the present invention and system, can be on photoresist direct accurate many ledge structures of preparation large format, working (machining) efficiency is high, cost is low, the ledge surface of acquisition is smooth.
In order to make those skilled in the art person understand the technical scheme among the application better; To combine the accompanying drawing among the application embodiment below; Technical scheme among the application embodiment is carried out clear, intactly description; Obviously, described embodiment only is the application's part embodiment, rather than whole embodiment.Based on the embodiment among the application, those of ordinary skills are not making the every other embodiment that is obtained under the creative work prerequisite, all should belong to the scope of the application's protection.
Shown in Figure 2 is the synoptic diagram of two-beam interference etching system in the first embodiment of the invention.
Join shown in Figure 2ly, two-beam interference etching system 10 comprises LASER Light Source (figure do not show), beam-expanding collimation optical element (figure does not show), optics template 11, beam splitter 12, projection optics mirror group 13 and wedge shape phase board 14.
Adopt laser as light source, its advantage is that laser has good coherence, is suitable for carrying out interference lithography.In addition, compare ordinary light source, laser has good light field homogeneity.
The beam-expanding collimation optical element will be in order to becoming directional light from the laser beam datum of LASER Light Source.
Adopt 121 pairs of laser beam of phase grating to carry out beam split, be easy to realize the interference lithography of stable and controllable.Advantage one, two-way light+1 that can guarantee to participate in interfering grade equates that with the energy of-1 grade of light beam is strict initial phase is identical, thereby can guarantee to obtain the light distribution of desirable cos profile; Advantage two, very low to coherence's requirement of LASER Light Source, go for multiple laser type.
Phase grating 121, the preferred bigger numerical of its spatial frequency, for example 300 lines right/millimeter more than.The inferior light beam of a plurality of levels after the beam split is difficult for mutual aliasing like this, and the inferior output beam grazing of each level is better, thereby makes through after the projection optical system, finally can enough obtain the interference light intensity distribution that approaching desirable cos distributes at finished surface.But the spatial frequency of phase grating 121 also should not be too big, otherwise the cycle of interference fringe corresponding reducing, the accuracy requirement of multiexposure, multiple exposure staggered superposition is improved.
Projection optics mirror group 13 is also gathered processing work 15 surfaces with this two light beams with-1 grade of light beam for+1 grade in order to reception and is realized the interference exposure.Projection optics mirror group 13 comprises the first projection optics mirror group 131 and the second projection optics mirror group 132, and laser beam realizes interfering exposure through the first projection optics mirror group 131 and the second projection optics mirror group, 132 backs on processing work 15 surfaces respectively.Diaphragm 122 and is positioned on the light path of 0 grade of light beam between the first projection optics mirror group 131 and the second projection optics mirror group 132.
Wedge shape phase board 14 is used for realizing high-speed, high precision exposure staggered superposition.It is positioned at+the intersection point place of 1 grade of light path (perhaps-1 grade light path) and the second projection optics mirror group, 132 front focal planes.Move wedge shape phase board 14, can change the initial bit phase of '+1 ' grade of light path, thereby make the interference fringe on the processing work 15 move, and then realize the staggered superposition of multiexposure, multiple exposure along horizontal direction.Wedge shape phase board 14 can directly be driven by the Piezoelectric Ceramic device.
This phase board move mode, it is with the obvious advantage to compare the platform move mode.Wedge shape phase board 14 is compared platform, and quality is light, thereby corresponding fast, and bearing accuracy is high.Moreover wedge structure has how much effects of amplifying, and can the moving of microcosmic magnitude be enlarged into moving of macroscopical magnitude, thereby bearing accuracy be improved significantly.
The mode of the exposure of two-beam interference etching system 10 stack, can based on classics+1 ' grade with ' 1 ' grade two-beam interference realization, specifically implementation method is following:
1, adopt typical two-beam interference light path, the light field COMPLEX AMPLITUDE of exposure is classical cos function, can be designated as:
Light distribution is a COMPLEX AMPLITUDE square:
2, in order to obtain the light distribution of flat-top, need the exposure of two-beam interference repeatedly be superposeed, concrete mode is:
1, adopts+1 grade and-1 grade of two-beam interference exposure;
2, the exposure stacking fold is N time, N >=2;
3, the dislocation value of each time exposure position is d
I/ N.Here, d
IBe cycle of light distribution of exposure light field.
In most preferred embodiment, adopt double exposure, i.e. N=2,, d
I/ 2 staggered superposition.Total light intensity of double exposure stack can be expressed as:
Expression formula according to I can be known, has finally obtained the flat-top lithographic results.
Join shown in Figure 3, fine line I
1With fine dotted line I
2Be the light distribution of double exposure successively, heavy line I is the total light distribution after superposeing.
Utilize above-mentioned two-beam interference etching system 10 to control the height of step, need the different exposure dose of realization of each exposure area of control, here exposure dose=exposure light intensity * time shutter.Two kinds of implementations specifically can be arranged:
One, the control exposure frequency is realized multistage exposure dose
This processing mode for different bench heights, adopts different exposure frequencies.Step is high more, and exposure frequency is many more.Under the not many situation of step number,, can adopt the mode of branch layer photoetching to realize like 2 steps ~ 4 steps.With two steps is example, the concrete detailed description:
Two ledge structures are divided into two layer photoetchings.Ground floor, photoetching are accomplished the exposure of the first half of a step cutting pattern and two step cutting patterns.The second layer, photoetching are accomplished the back half the exposure of two step cutting patterns.Owing in the photoetching, all be the isodose exposure of monopulse in each layer, thereby can adopt flight exposure (lining by line scan), thereby can obtain high operational efficiency and bearing accuracy.As previously mentioned, the photoetching of each layer here is not once to accomplish, and be divided into N time and carry out.
The control exposure frequency specifically also comprises two kinds of implementation methods:
1, the multiplicity of control exposure cycle.
2, control the size of N in each exposure cycle.
So-called exposure cycle is meant, through the limited number of time of interfering exposure is superposeed, to obtain the process of flat-top light intensity.Particularly: comprise N time in each exposure cycle and interfere exposure, the dislocation value between the adjacent double exposure is d
I/ N, wherein, N>=2, d
IBe cycle of light distribution of exposure light field, the dislocation value between the adjacent exposure cycle is 0.
Two, the control time shutter is realized multistage exposure dose
This processing mode for different bench heights, adopts the different time shutter.Step is high more, and the time shutter is long more.
The photoetching degree of depth and the exposure dose that it is noted that photoresist in the actual light carving technology are not the linear relationships of a strictness.Response curve according to typical photoresist can find out that when exposure dose was very little and very big, the linearity was the poorest; And in medium exposure dose interval, the linearity is good.In the actual process, need select suitable exposure dose based on the response curve of the photoresist that is adopted, to obtain maximum linear response.
Photoresist non-linear corresponding can be ignored to the influence of the flatness of step, but influential to the relative ladder height of many steps.In case of necessity, can carry out the precorrection of exposure dose according to the response curve of photoresist.
Shown in Figure 4 is the synoptic diagram of two-beam interference etching system in the second embodiment of the invention.
Join shown in Figure 4ly, in the two-beam interference etching system 20, beam splitter 22 can directly curb 0 grade of light beam through the optimal design of grooved, so need not to be provided with diaphragm.
Other structures of two-beam interference etching system 20 are identical with first embodiment with principle, repeat no more.
In sum, the present invention adopts optics template projection phase grating spectral interference light path.Phase grating will be imported directional light and carry out beam splitting, and multiple beam makes public on photoresist through projection optical system; Interfering the COMPLEX AMPLITUDE of exposure back light field is cosine function; Through the contraposition stack of multiexposure, multiple exposure, the total exposure intensity on photoresist is that flat-top distributes, thereby can obtain accurate ledge structure; On the roughness of the depth dimensions precision of step and ledge surface, obviously be superior to existing method.Through two-beam interference photoetching method of the present invention, can be on photoresist direct accurate many ledge structures of preparation large format, working (machining) efficiency is high, and the components and parts that adopted obtain easily, cost is low.
To those skilled in the art, obviously the invention is not restricted to the details of above-mentioned example embodiment, and under the situation that does not deviate from spirit of the present invention or essential characteristic, can realize the present invention with other concrete form.Therefore; No matter from which point; All should regard embodiment as exemplary; And be nonrestrictive, scope of the present invention is limited accompanying claims rather than above-mentioned explanation, therefore is intended to the implication of the equivalents that drops on claim and all changes in the scope are included in the present invention.Should any Reference numeral in the claim be regarded as limit related claim.
In addition; Describing according to embodiment though should be appreciated that this instructions, is not that each embodiment only comprises an independently technical scheme; This narrating mode of instructions only is for clarity sake; Those skilled in the art should make instructions as a whole, and the technical scheme among each embodiment also can form other embodiments that it will be appreciated by those skilled in the art that through appropriate combination.
Claims (8)
1. a two-beam interference photoetching method is characterized in that, the two-way light beam realizes N time to interfere exposure on the processing work surface, and the dislocation value between the adjacent double exposure position is d
I/ N, wherein, N>=2, d
IBe the cycle of the light distribution after the exposure, the light field COMPLEX AMPLITUDE behind the said two-way beam interference is a cosine function.
2. an application rights requires the system of 1 said two-beam interference photoetching method, it is characterized in that, comprising:
LASER Light Source;
The beam-expanding collimation optical element will become directional light from the laser beam datum of LASER Light Source;
The optics template is in order to the size and the shape of control exposure area;
Beam splitter carries out beam split to laser beam;
Projection optics mirror group receives the laser beam after the said beam split and it is converged to the processing work surface and realizes interfering exposure, and the light field COMPLEX AMPLITUDE after the interference is a cosine function;
The wedge shape phase board, the dislocation value of controlling between the adjacent double exposure position is d
I/ N, wherein, N>=2, d
IBe the cycle of the light distribution after the exposure.
3. two-beam interference according to claim 2 system is characterized in that said optics template is mask or spatial light modulator.
4. two-beam interference according to claim 2 system is characterized in that said beam splitter comprises phase grating.
5. two-beam interference according to claim 4 system is characterized in that, said phase grating suppresses 0 grade of light beam.
6. two-beam interference according to claim 4 system is characterized in that said beam splitter also comprises diaphragm, and said diaphragm blocks 0 grade of light beam from said phase grating.
7. two-beam interference according to claim 2 system; It is characterized in that; Said projection optics mirror group comprises the first projection optics mirror group and the second projection optics mirror group; Said wedge shape phase board is between the said first projection optics mirror group and the second projection optics mirror group, and said wedge shape phase board is positioned on the light path of one of said two-way light beam.
8. two-beam interference according to claim 2 system is characterized in that, said two-beam interference system also comprises the Piezoelectric Ceramic device, and said wedge shape phase board is driven by this Piezoelectric Ceramic device.
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| CN103424996B (en) * | 2013-09-03 | 2016-03-02 | 苏州大学 | A kind of optical machining system and method |
| CN106451063A (en) * | 2016-11-15 | 2017-02-22 | 北京工业大学 | Manufacturing method of distributed feedback type polymer laser based on beat frequency structure |
| CN110346857A (en) * | 2019-07-15 | 2019-10-18 | 英诺激光科技股份有限公司 | Utilize the method for multi beam ultrafast laser production diffraction optical device |
| CN112731776A (en) * | 2021-01-14 | 2021-04-30 | 之江实验室 | Double-mask high-flux laser super-resolution laser direct writing method and device |
| CN114002918A (en) * | 2021-10-12 | 2022-02-01 | 清华大学 | Method, device, equipment, control system and medium for measuring and calculating photoetching exposure dose |
| CN114002918B (en) * | 2021-10-12 | 2022-07-15 | 清华大学 | Method, device, equipment, control system and medium for measuring and calculating photoetching exposure dose |
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