CN106451063A - Manufacturing method of distributed feedback type polymer laser based on beat frequency structure - Google Patents

Manufacturing method of distributed feedback type polymer laser based on beat frequency structure Download PDF

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CN106451063A
CN106451063A CN201611022568.9A CN201611022568A CN106451063A CN 106451063 A CN106451063 A CN 106451063A CN 201611022568 A CN201611022568 A CN 201611022568A CN 106451063 A CN106451063 A CN 106451063A
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beat frequency
laser
frequency structure
organic semiconductor
distributed feedback
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CN106451063B (en
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翟天瑞
吴晓锋
张新平
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Beijing University of Technology
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Beijing University of Technology
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H01S5/1237—Lateral grating, i.e. grating only adjacent ridge or mesa
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/041—Optical pumping

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)

Abstract

The invention relates to a manufacturing method of a distributed feedback type polymer laser based on a beat frequency structure and belongs to the field of organic semiconductor micro-cavity lasers. The manufacturing method includes: spin coating a glass substrate with a layer of photoresist film, using a double-beam interference method to perform n exposure on the film, wherein the cycle of n interference patterns is respectively A1, A2...An, n grating are parallelly superimposed, and n is not smaller than 2; developing a sample after the exposure, and displaying a beat frequency structure after the development; spin coating the sample with the beat frequency structure with a layer of organic semiconductor film at the rotation speed of 800-4000r/second, and dissolving an organic semiconductor in an organic solvent with the concentration being 10-30mg/ml to complete laser manufacturing. The manufacturing method has the advantages that etching equipment is not needed, and the method is low in cost, capable of manufacturing the beat frequency structure in a large-area and fast manner, good in repeatability and high in manufacturing efficiency.

Description

The preparation method of the distributed feedback polymer laser based on beat frequency structure
Technical field
The invention belongs to organic semiconductor micro-cavity laser field, relate to the use of Ultra-Violet Laser photoetching method in glass substrate On make feedback cavity be beat frequency structure organic distributed feedback (DFB) Laser Devices.
Background technology
Distributed feedback (DFB) organic semiconductor laser generally comprises substrate (can no), photonic crystal feedback cavity, organic Luminescent layer three part.Luminescent layer forms laser after amplifying through feedback cavity oscillations through the fluorescence that pumping sends.Substrate can be glass, Optical fiber, polyethylene terephthalate (PET), air.The cycle of different photonic crystals can amplify in the range of fluorescence Spectra The light of corresponding wavelength forms laser.So organic semiconductor Distributed Feedback Laser has the advantages that flexibility height, wide gain spectrum.Integrated Change is also that people pursue always, and the feedback cavity of current organic semiconductor Distributed Feedback Laser part mainly has grating, two-dimensional rectangle brilliant Lattice, triangular crystal lattice, they launch Single wavelength, dual wavelength, three wavelength lasers respectively.Be conducive to organic semiconductor micro-cavity laser device Integrated innovative approach is significant.
Content of the invention
The present invention efficiently method makes the organic semiconductor laser part that feedback cavity is beat frequency structure, and beat frequency structure is The pattern of the modulation depth periodic law change that multiple parallel gratings are formed when being superimposed together.The beat frequency knot that two gratings are formed Structure launches dual-wavelength laser as the Laser Devices of feedback cavity after pumping.The beat frequency structure of three grating formation is as feedback cavity Laser Devices launch three wavelength lasers after pumping.Their laser facula is to be made up of multi-stripe laser line.
Distributed feedback polymer laser based on beat frequency structure is not it is characterised in that beat frequency structure is at least two not Synperiodic parallel gratings are superimposed together and form the pattern of modulation depth periodic law change, and beat frequency structure has been evenly coated with Machine semiconductive thin film such as F8BT, PFO, MEH-PPV etc., the thickness of film is preferably 100nm-600nm.
In the present invention, the organic semiconductor Distributed Feedback Laser part technology of preparing concrete scheme based on beat frequency structure is as follows：
(1) with one layer of photoresist film of 800-4000 revolutions per second of rotating speed spin coating in substrate, using double beam interferometry (light Road figure is as shown in Figure 1) expose n time on film, the cycle of n interference figure is respectively A1, A2 ... An, n parallel gratings It is superimposed together, n is more than or equal to 2；
(2) by the sample development after exposure, after development, beat frequency structure exhibits are out (if Fig. 2 and Fig. 3 is re-expose respectively Side and cross sectional scanning electron microscope figure (SEM))；
(3) carry in step (2) on the sample of beat frequency structure with one layer of organic semiconductor thin-film of 800-4000 revolutions per second of spin coating As F8BT, PFO, MEH-PPV etc., organic semiconductor dissolves in organic solvent, organic semiconductor concentration in organic solvent 10-30mg/ml；Laser instrument preparation completes.
Twice, laser instrument, through pumping source pumping, sends dual-wavelength laser, and laser facula is made up of multi-stripe laser line for exposure, Fig. 4 is its laser facula photo.
If exposure three times in above-mentioned 1), three interference figure cycles are respectively A1, A2, A3, then can be made into three gratings Beat frequency structure, Fig. 5 and Fig. 6 is its side and section electronic scanner microscope figure respectively.In pumping, device transmitting three wavelength swashs Light, Fig. 7 is its laser facula photo.
Above-mentioned substrate is selected from glass, ito glass, FTO glass, quartz plate or silicon chip, PET etc.；Described organic solvent For one of dimethylbenzene, toluene, chlorobenzene；A1, A2, A3 ... An cycle is selected from the value in 270nm-400nm, A1, A2, A3 ... An is different, and using double exposure or three exposures, A1, A2, A3 preferably employ 350nm, 362nm, 374nm to the present invention； Pumping source is psec or the femto-second laser of 400-600nm.
Double beam interferometry light path：The laser that laser instrument (1) sends is via expanding with becoming expand flat after lens group (3) Row light beam, after the collimated light beam expanding is via one or more first mediums film total reflective mirror (2), then will swash through beam splitter (4) Light is divided into two bundle laser, and the laser collective effect that two bundle laser reflect via second medium film total reflective mirror (2 ') respectively is in be processed Sample (5) on.
The advantageous feature of the present invention：
1) the inventive method is without using etching apparatus, with low cost, can large area, quickly prepare beat frequency structure, repeat Property good, preparation efficiency is high.
2) Laser Devices of the present invention can launch multi-wavelength, a plurality of parallel laser rays.
Brief description
Fig. 1, Ultra-Violet Laser optical graving are for the light path schematic diagram of beat frequency structure.
Wherein, 1 is laser instrument (preferably ultraviolet laser, this patent selects laser wavelength 360nm)；2 is first medium Film total reflective mirror；3 is to expand to use lens group；4 is beam splitter；5 is sample to be processed；2 ' is second medium film total reflective mirror.
Beat frequency texture edge SEM (SEM) photo that Fig. 2, double grating are formed.
Wherein, modulation depth is essentially 0 at 6, and at 7, modulation depth is diminished from centre to both sides.
Beat frequency structural section SEM (SEM) photo that Fig. 3, double grating are formed.
The laser facula photo that Fig. 4, double grating beat frequency structure send as feedback cavity Laser Devices.
Wherein, 8 optical maser wavelength 564nm, 9 optical maser wavelengths 570nm.
Beat frequency texture edge SEM (SEM) photo that Fig. 5, three gratings are formed.
Beat frequency structural section SEM (SEM) photo that Fig. 6, three gratings are formed.
The laser facula photo that Fig. 7, three grating beat frequency structures send as feedback cavity Laser Devices.
Wherein, 10 optical maser wavelength 569nm, 11 optical maser wavelengths 558nm, 12 optical maser wavelengths 565nm.
Specific embodiment
With reference to embodiment, the invention will be further described, but the present invention is not limited to following examples.
Embodiment 1：Double grating beat frequency structure is prepared as the organic semiconductor laser part of feedback cavity.
1) photoresist is spun in substrate of glass with 2500 revolutions per seconds of rotating speed, forms the film of 150nm；
2) sample that spin coating is had photoresist film is positioned in heating plate, heats 1 minute at 110 DEG C, obtains thickness Uniformly, continuous photoresist film structure sample；
3) the photoresist film sample of above-mentioned preparation is placed in optical interference circuit, as shown in figure 1, half folder of wherein two light beams Angle θ=30.95 °.Make sample exposure 6 seconds using shutter (and sample reception arrive energy, sample developing time coupling), this cycle For 350nm；
4) in the case that sample is motionless, adjust θ=29.82 °, make sample exposure 6 seconds, this cycle is 362nm；
5) exposed sample develop 5 seconds in developer solution take out immediately in deionized water will remain in aobvious on sample Shadow liquid rinses out, then dries up the preparation completing beat frequency structure with hair-dryer.As Fig. 2 and Fig. 3 is respectively double grating beat frequency structure Side and cross sectional scanning electron microscope (SEM) photo.
6) with one layer of F8BT of 1500 revolutions per seconds of spin coatings, F8BT film thickness about 180nm, laser on the sample of beat frequency structure Device preparation completes.
7) use pumping source pumping laser device, device sends dual wavelength multiple laser line, such as Fig. 4.
Above-mentioned photoresist model Allresist AR-P 3170, developer solution is Allresist AR 300-47.
Embodiment 2：Three grating beat frequency structures are prepared as the organic semiconductor laser part of feedback cavity.
Embodiment 2
In embodiment 1 4) after step, θ=28.77 ° are adjusted, this cycle is 374nm, then to sample exposure 6 seconds, then Carry out above-mentioned steps 5) and 6) preparation of three grating beat frequency structures can be completed.As Fig. 5 and Fig. 6 is respectively three grating beat frequency structures Side and cross sectional scanning electron microscope (SEM) photo.With pumping source pumping laser device, it is sharp that device sends three wavelength multi beams Light, such as Fig. 7.

Claims (10)

1. a kind of organic semiconductor Distributed Feedback Laser part preparation method based on beat frequency structure is it is characterised in that include following walking Suddenly：
(1) on the glass substrate with 800-4000 revolutions per second one layer of photoresist film of rotating speed spin coating, existed using double beam interferometry Expose n time on film, the cycle of n interference figure is respectively A1, A2 ... An, and n parallel gratings are superimposed together, and n is more than Equal to 2；
(2) by the sample development after exposure, after development, beat frequency structure exhibits are out；
(3) carry in step (2) on the sample of beat frequency structure with one layer of organic semiconductor thin-film of 800-4000 revolutions per second of spin coating, have Machine semiconductor dissolves in organic solvent, organic semiconductor concentration 10-30mg/ml in organic solvent；Prepared by laser instrument Become.
2., according to a kind of organic semiconductor Distributed Feedback Laser part preparation method based on beat frequency structure described in claim 1, it is special Levy and be, substrate is selected from glass, ito glass, FTO glass, quartz plate or silicon chip, PET.
3., according to a kind of organic semiconductor Distributed Feedback Laser part preparation method based on beat frequency structure described in claim 1, it is special Levy and be, organic solvent is one of dimethylbenzene, toluene, chlorobenzene, organic semiconductor is selected from F8BT, PFO, MEH-PPV.
4., according to a kind of organic semiconductor Distributed Feedback Laser part preparation method based on beat frequency structure described in claim 1, it is special Levy and be, concentration 10-30mg/ml of solutions of organic semiconductors.
5., according to a kind of organic semiconductor Distributed Feedback Laser part preparation method based on beat frequency structure described in claim 1, it is special Levy and be, A1, A2, A3 ... An cycle is selected from the value in 270nm-400nm, A1, A2, A3 ... An is different.
6., according to a kind of organic semiconductor Distributed Feedback Laser part preparation method based on beat frequency structure described in claim 1, it is special Levy and be, using double exposure or three exposures, A1, A2, A3 adopt 350nm, 362nm, 374nm.
7., according to a kind of organic semiconductor Distributed Feedback Laser part preparation method based on beat frequency structure described in claim 1, it is special Levy and be, double beam interferometry light path：The laser that laser instrument (1) sends is via expanding with becoming expand flat after lens group (3) Row light beam, after the collimated light beam expanding is via one or more first mediums film total reflective mirror (2), then will swash through beam splitter (4) Light is divided into two bundle laser, and the laser collective effect that two bundle laser reflect via second medium film total reflective mirror (2 ') respectively is in be processed Sample (5) on.
8., according to a kind of organic semiconductor Distributed Feedback Laser part preparation method based on beat frequency structure described in claim 1, it is special Levy and be, twice, gained laser instrument, through pumping source pumping, sends dual-wavelength laser, and laser facula is by multi-stripe laser line structure for exposure Become；
If exposure three times, make three grating beat frequency structure laser parts in above-mentioned 1), in pumping, three wavelength launched by device Laser.
9. the distributed feedback polymer laser based on beat frequency structure is it is characterised in that beat frequency structure is at least two differences The parallel gratings in cycle are superimposed together and form the pattern of modulation depth periodic law change, and beat frequency structure is evenly coated with F8BT, PFO or MEH-PPV organic semiconductor thin-film.
10. the distributed feedback polymer laser based on beat frequency structure is it is characterised in that F8BT, PFO, MEH-PPV's is organic The thickness of semiconductive thin film is preferably 100nm-600nm.
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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110429470A (en) * 2019-05-29 2019-11-08 北京工业大学 A kind of adjustable chamber coupled mode Distributed Feedback Laser of shoot laser polarization state
WO2021135862A1 (en) * 2019-12-29 2021-07-08 Hong Kong Baptist University Tunable laser materials comprising solid-state blended polymers

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102722091A (en) * 2012-07-04 2012-10-10 苏州大学 Two-beam interference photoetching method and system
CN103235417A (en) * 2013-04-23 2013-08-07 太原理工大学 Thin film type optical collimator on basis of surface plasmon polaritons
CN103762497A (en) * 2013-11-06 2014-04-30 南京大学 Reconstruction-equivalent chirp and equivalent half apodization-based DFB semiconductor laser and preparation method thereof
CN105207055A (en) * 2015-10-08 2015-12-30 南京大学（苏州）高新技术研究院 Half-edge apodized sampling grating based on reconstruction-equivalence chirp and DFB laser

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102722091A (en) * 2012-07-04 2012-10-10 苏州大学 Two-beam interference photoetching method and system
CN103235417A (en) * 2013-04-23 2013-08-07 太原理工大学 Thin film type optical collimator on basis of surface plasmon polaritons
CN103762497A (en) * 2013-11-06 2014-04-30 南京大学 Reconstruction-equivalent chirp and equivalent half apodization-based DFB semiconductor laser and preparation method thereof
CN105207055A (en) * 2015-10-08 2015-12-30 南京大学（苏州）高新技术研究院 Half-edge apodized sampling grating based on reconstruction-equivalence chirp and DFB laser

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110429470A (en) * 2019-05-29 2019-11-08 北京工业大学 A kind of adjustable chamber coupled mode Distributed Feedback Laser of shoot laser polarization state
CN110429470B (en) * 2019-05-29 2021-07-30 北京工业大学 Cavity coupling DFB laser with adjustable emergent laser polarization state
WO2021135862A1 (en) * 2019-12-29 2021-07-08 Hong Kong Baptist University Tunable laser materials comprising solid-state blended polymers
US11837842B2 (en) 2019-12-29 2023-12-05 Hong Kong Baptist University Tunable laser materials comprising solid-state blended polymers

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