CN1595232A - A method and apparatus for producing three-dimensional photon crystal structure - Google Patents
A method and apparatus for producing three-dimensional photon crystal structure Download PDFInfo
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- CN1595232A CN1595232A CN 200410019728 CN200410019728A CN1595232A CN 1595232 A CN1595232 A CN 1595232A CN 200410019728 CN200410019728 CN 200410019728 CN 200410019728 A CN200410019728 A CN 200410019728A CN 1595232 A CN1595232 A CN 1595232A
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Abstract
This invention discloses a three-dimensional photon crystal method and its apparatus, which belongs to the photon technique field. The method is the following: to form non-vertical irradiation light-sensitive thin film plane by the angular bisector crossed light beams and the light-sensitive thin film; to turn the light-sensitive thin film plane with 120 degrees after the first exposure; then to go with second exposure to turn the plane 120 degrees to make third exposure to change the size inside the angle control thin film plane between the two light beams and to change the size along the direction of the angle control thin film thickness of angular bisector and the light-sensitive thin film normal line. The apparatus is characterized by the following: the base pad is supported by the rotation plat; the front surface of the base pad is located with a lens; to fill reflection matching liquid in the clearance between the lens and light-sensitive thin film.
Description
Technical field
The present invention relates to a kind of method and apparatus that produces three-dimensional photon crystal structure, particularly a kind of device that utilizes laser interference and method for multiple exposures with multiple to produce three-dimensional photon crystal structure belongs to the photon technology field.
Background technology
Photonic crystal is to be the artificial material that periodically variable dielectric material constitutes by two kinds of specific inductive capacity.Similar to common crystal, photonic crystal also can be described with notions such as energy band, energy gap, energy state density, defect states.Can be as common crystal to the effect and the control of electron production, photonic crystal can be controlled the motion of photon, as the transmission direction of control light, filtering or the like.Potential application prospect makes theoretical research, related experiment and the practical application of photonic crystal obtain developing rapidly, and this field has become the focus of research in world today's scope.Press the Spatial Dimension that space periodicity changes and photonic bandgap occurs of specific inductive capacity, photonic crystal can be divided into one dimension (1D), two dimension (2D) and three-dimensional (3D) photonic crystal.As its name suggests, one dimension, two and three dimensions photonic crystal refer to have the space periodicity variation of specific inductive capacity and the material of photon frequency forbidden band characteristic respectively on one dimension, two and three dimensions space all directions.Photonic crystal is since being born, and theoretical research is comparatively ripe, confirms with the technical microwave region experiment that is easier to realize earlier but the result of the Theoretical Calculation of photonic crystal is most, so the majority report of experiment making aspect is all at microwave, millimeter wave.Its phase constant of the application requirements of photonic crystal aspect optics will be the hundreds of nanometer scale in sub-micron.And also there are a lot of difficulties in the three-D photon crystal that the present manual manufacture cycle is micron, submicron order, so the manufacturing of the photonic crystal of optical region scope remains a very big challenge.Existing photonic crystal method for making comprises the precision optical machinery processing method, semiconductor microactuator autofrettage (laser ablation, electron beam lithography, reactive ion beam etching (RIBE)), colloid self-assembly method and laser hologram photoetching process etc.The laser hologram photoetching technique is to utilize the 3D hologram pattern of the interference generation of multiple laser, exposes to being coated in on-chip emulsion, obtains three-dimensional photon crystal structure after treatment.Because this method single exposure can form three-dimensional structure, and can change the structure and the size of three-D photon crystal by the space geometry relation that changes light beam, so the laser hologram photoetching technique provides a kind of effective method for the three-D photon crystal of making submicron-scale, thereby be subjected to paying attention to widely.But there is defective in existent method, at first owing to adopt multiple-beam interference, light channel structure complexity.In addition, the yardstick of formed three-dimensional structure is interrelated, and to polarization of incident light state sensitivity.
Summary of the invention
Purpose of the present invention just provides a kind of method and apparatus that produces three-dimensional photon crystal structure.Procedure is simple, and device is compact.
The present invention is realized by following technical proposals.The coating photosensitive material forms film on substrate, adopts two-beam interference then, and generation intensity is Sine distribution, and the equal strength face is that the 3D hologram pattern on plane exposes to the photosensitive material film.Handle by rights to photosensitive material the exposure back, generate the method for three-dimensional photon crystal structure, it is characterized in that comprising following operating procedure: the angular bisector with the twin-beam junction becomes non-perpendicular direction irradiation photosensitive material thin film planar with the photosensitive material thin film planar, and after exposure for the first time, with the photosensitive material thin film planar behind its central axis rotation 120 degree, carry out the exposure second time, afterwards, the photosensitive material thin film planar is exposed behind its central axis rotation 120 degree for the third time, three times exposure is equal fully, the total exposure amount is determined according to the luminous sensitivity of photosensitive material, and changing two angle of beams control three-dimensional photon crystal structure yardstick in thin film planar, control yardstick on the film thickness direction with the angular bisector and the angle of photosensitive material film normal direction that change twin-beam.
Realize the device of above-mentioned generation three-dimensional photon crystal structure method, this device comprises laser instrument, the one dimension phase grating, the light hurdle, plane mirror constitutes, and it is characterized in that the substrate that scribbles photosensitive material is supported by a universal stage, and the frontal plane at substrate is provided with prism, fills index-matching fluid in the gap between prism and photosensitive material film.
Characteristics of the present invention: 1) light channel structure of two-beam interference is simple, and as if the plane of incident beam polarization direction perpendicular to two light beam places, then the formed 3D hologram pattern of two-beam interference has maximum-contrast; 2) can regulate respectively three-dimensional photon crystal structure in thin film planar and the film thickness direction on yardstick.
Description of drawings
Accompanying drawing 1 produces the device block diagram of three-dimensional photon crystal structure for the present invention.Among Fig. 1,101 is laser instrument; 102 is laser beam; 103 is the one dimension phase grating; 104,105,106 be respectively that the one dimension phase grating produces+1 grade, 0 grade and-1 order diffraction light; 107 is the light hurdle; 108,109 is plane mirror; 110,111 for being used to produce the incident beam of holographic interference pattern; 112 is the angular bisector of two incident beams; 113 is prism; 114 is index-matching fluid; 115 is photosensitive material; 116 is substrate; 117 is universal stage; 118 is the normal of photosensitive material and the turning axle of universal stage.
The three-dimensional photon crystal structure figure of accompanying drawing 2 for adopting method and apparatus of the present invention to produce.
Embodiment
Below in conjunction with accompanying drawing the specific embodiment of the present invention is elaborated.As shown in Figure 1, the laser beam of being sent by laser instrument 101 102 incides one dimension phase grating 103, produces multi-level diffraction light.When phase grating 103 during with the optical maser wavelength coupling, the energy of diffraction light mainly concentrates on+1 grade and-1 grade on, appear on a small quantity on 0 grade.Because have only+1 grade and-1 grade be used for two-beam interference, make to comprise 0 grade inferior the filtering of other order of diffraction with light hurdle 107.+ 1 grade and-1 order diffraction light obtain incident beam 110,111 through plane mirror 108,109 reflections.Incident beam 110,111 intersects in its plane, place, produces to interfere, and formation intensity is Sine distribution, and the equal strength face is the 3D hologram pattern on plane.Spacing between the equal strength plane is determined by the angle between optical maser wavelength and the incident beam 110,111.The film of being made by photosensitive material 115 places the intersection of incident beam 110,111.The angular bisector 112 of two incident beams is not parallel with the turning axle 118 of the normal of photosensitive material and universal stage, but at angle.In this case, enter into photosensitive material 115 effectively for making incident beam 110,111, the angular bisector 112 that a prism 113, two incident beams are set is vertical or approaching vertical with the plane of incidence of prism 113.Between prism 113 and the photosensitive material 115 very little gap is arranged, index-matching fluid 114 is wherein arranged.Photosensitive material 115 is coated in substrate 116 surfaces, and substrate 116 is installed on the universal stage 117.
The step of being made three-dimensional photon crystal structure by said apparatus is as follows: will be coated on the substrate 116 by sol evenning machine with the emulsion that used optical maser wavelength is complementary, and drying etc. is handled and formed certain thickness light-sensitive surface 115.The substrate 116 that scribbles light-sensitive surface 115 is fixed on the universal stage 117.Choose the phase grating in suitable cycle according to the yardstick of want three-dimensional photon crystal structure.Under fixing situation of cycle of phase grating, the logical plane mirror 108,109 of regulating can also change angle between the incident beam 110,111 within the specific limits.Adjust the angle between the turning axle 118 of the normal of the angular bisector 112 of two incident beams and light-sensitive surface and universal stage at the yardstick of film thickness direction according to want three-dimensional photon crystal structure.According to the requirement of light-sensitive surface 115 luminous sensitivities, determine time shutter or umber of pulse according to laser power or pulse energy.Start 101 pairs of light-sensitive surfaces of laser instrument 115 and carry out the exposure first time, exposure is 1/3rd of a required total exposure amount.Afterwards, control universal stage 117 is with turning axle 118 rotations 120 degree of light-sensitive surface 115 along its normal direction and universal stage.Start 101 pairs of light-sensitive surfaces of laser instrument 115 and carry out the exposure second time, exposure is 1/3rd of a required total exposure amount.At last, control universal stage 117 again, light-sensitive surface 115 is rotated 120 degree again along the turning axle 118 of its normal direction and universal stage, start 101 pairs of light-sensitive surfaces 115 of laser instrument and expose for the third time, exposure is 1/3rd of a required total exposure amount.After finishing exposure, use corresponding irrigation that light-sensitive surface 115 is washed and other processing, can obtain three-dimensional photon crystal structure.The three-dimensional photon crystal structure of accompanying drawing 2 for adopting method and apparatus of the present invention to produce.
Above-mentioned emulsion can be a positive photoetching rubber, also can be negative photoresist, but resulting structure is different, and both are complementary.The SU8 that MicroChem Corp produces is a kind of negative photoresist to ultraviolet sensitivity commonly used, can use the laser of the wavelength of frequency tripling YAG laser instrument generation as 355nm.Adopt the device shown in the accompanying drawing 1, under the situation that plane mirror 108,109 is parallel to each other, the spacing between the formed equal strength of the two-beam interference plane is 1/2nd of used 103 cycles of phase grating.
Those skilled in the art are clear, and thought of the present invention can adopt the alternate manner beyond the above-named embodiment to realize.
Claims (2)
1, a kind of method that produces three-dimensional photon crystal structure, this method is that the coating photosensitive material forms film on substrate, adopt two-beam interference then, generation intensity is Sine distribution, the equal strength face is that the 3D hologram pattern on plane exposes to the photosensitive material film, handle by rights to photosensitive material the exposure back, generate three-dimensional photon crystal structure, it is characterized in that comprising following operating procedure: the angular bisector with the twin-beam junction becomes non-perpendicular direction irradiation photosensitive material thin film planar with the photosensitive material thin film planar, and after exposure for the first time, with the photosensitive material thin film planar behind its central axis rotation 120 degree, carry out the exposure second time, afterwards, the photosensitive material thin film planar is exposed behind its central axis rotation 120 degree for the third time, three times exposure is equal fully, the total exposure amount is determined according to the luminous sensitivity of photosensitive material, and changing two angle of beams control three-dimensional photon crystal structure yardstick in thin film planar, control yardstick on the film thickness direction with the angular bisector and the angle of photosensitive material film normal direction that change twin-beam.
2, a kind of device of realizing producing three-dimensional photon crystal structure by the method for claim 1, this device comprises laser instrument, the one dimension phase grating, the light hurdle, plane mirror constitutes, it is characterized in that: the substrate that scribbles photosensitive material is supported by a universal stage, and at the frontal plane of substrate prism is set, and fills index-matching fluid in the gap between prism and photosensitive material film.
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| CNB2004100197285A CN100337145C (en) | 2004-06-22 | 2004-06-22 | A method and apparatus for producing three-dimensional photon crystal structure |
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| CNB2004100197285A CN100337145C (en) | 2004-06-22 | 2004-06-22 | A method and apparatus for producing three-dimensional photon crystal structure |
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| CN100337145C CN100337145C (en) | 2007-09-12 |
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101165591B (en) * | 2007-09-29 | 2010-10-06 | 山东大学 | Method for producing two-dimensional polymer photon crystal using flexible offset printing |
| CN102243438A (en) * | 2011-07-04 | 2011-11-16 | 东南大学 | Method for manufacturing nano-scale periodic structured photonic crystals |
| CN101717989B (en) * | 2009-11-13 | 2012-01-04 | 西安交通大学 | Three-dimensional photonic crystal manufacturing method |
| CN102520481A (en) * | 2011-11-10 | 2012-06-27 | 宁波大学 | Preparation device and preparation method for one-dimension photonic crystal band-stop filter |
| CN102722091A (en) * | 2012-07-04 | 2012-10-10 | 苏州大学 | Two-beam interference photoetching method and system |
| CN104795482A (en) * | 2015-05-08 | 2015-07-22 | 大连民族学院 | Preparation method of LED photonic crystal |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5365541A (en) * | 1992-01-29 | 1994-11-15 | Trw Inc. | Mirror with photonic band structure |
| JP3348668B2 (en) * | 1998-12-24 | 2002-11-20 | 日本電気株式会社 | Method for manufacturing three-dimensional diffraction grating |
| CN1111288C (en) * | 2000-12-28 | 2003-06-11 | 复旦大学 | Photon crystal quantum trap structure and its preparing process |
| CN1204292C (en) * | 2001-11-27 | 2005-06-01 | 南京大学 | Preparation for external electric field controlled colloid particle self-composing and three-D photon crystal |
-
2004
- 2004-06-22 CN CNB2004100197285A patent/CN100337145C/en not_active Expired - Fee Related
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101165591B (en) * | 2007-09-29 | 2010-10-06 | 山东大学 | Method for producing two-dimensional polymer photon crystal using flexible offset printing |
| CN101717989B (en) * | 2009-11-13 | 2012-01-04 | 西安交通大学 | Three-dimensional photonic crystal manufacturing method |
| CN102243438A (en) * | 2011-07-04 | 2011-11-16 | 东南大学 | Method for manufacturing nano-scale periodic structured photonic crystals |
| CN102520481A (en) * | 2011-11-10 | 2012-06-27 | 宁波大学 | Preparation device and preparation method for one-dimension photonic crystal band-stop filter |
| CN102520481B (en) * | 2011-11-10 | 2014-04-16 | 宁波大学 | Preparation device and preparation method for one-dimension photonic crystal band-stop filter |
| CN102722091A (en) * | 2012-07-04 | 2012-10-10 | 苏州大学 | Two-beam interference photoetching method and system |
| CN104795482A (en) * | 2015-05-08 | 2015-07-22 | 大连民族学院 | Preparation method of LED photonic crystal |
| CN104795482B (en) * | 2015-05-08 | 2017-10-03 | 大连民族学院 | A kind of preparation method of LED photonic crystal |
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| CN100337145C (en) | 2007-09-12 |
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