CN104795482B - A kind of preparation method of LED photonic crystal - Google Patents
A kind of preparation method of LED photonic crystal Download PDFInfo
- Publication number
- CN104795482B CN104795482B CN201510233631.2A CN201510233631A CN104795482B CN 104795482 B CN104795482 B CN 104795482B CN 201510233631 A CN201510233631 A CN 201510233631A CN 104795482 B CN104795482 B CN 104795482B
- Authority
- CN
- China
- Prior art keywords
- light
- photonic crystal
- light beam
- laser
- led
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000004038 photonic crystal Substances 0.000 title claims abstract description 51
- 238000002360 preparation method Methods 0.000 title claims abstract description 12
- 230000001427 coherent effect Effects 0.000 claims abstract description 20
- 239000010409 thin film Substances 0.000 claims abstract description 17
- 238000000034 method Methods 0.000 claims abstract description 13
- 230000010287 polarization Effects 0.000 claims abstract description 7
- 238000005530 etching Methods 0.000 claims abstract description 6
- 239000011148 porous material Substances 0.000 claims abstract description 3
- 230000015572 biosynthetic process Effects 0.000 claims description 10
- 238000012544 monitoring process Methods 0.000 claims description 5
- 238000011031 large-scale manufacturing process Methods 0.000 abstract description 4
- 239000013078 crystal Substances 0.000 description 5
- 238000000605 extraction Methods 0.000 description 2
- 241001025261 Neoraja caerulea Species 0.000 description 1
- 238000005090 crystal field Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 239000000686 essence Substances 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 238000000025 interference lithography Methods 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/40—Materials therefor
- H01L33/42—Transparent materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0095—Post-treatment of devices, e.g. annealing, recrystallisation or short-circuit elimination
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0016—Processes relating to electrodes
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Microscoopes, Condenser (AREA)
- Polarising Elements (AREA)
- Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
Abstract
The present invention relates to a kind of preparation method of LED photonic crystal, using Nd：The frequency tripled laser Shu Zuowei direct etching laser of YAG laser, wavelength is λ, it is divided into three beams coherent laser through beam splitter, any two beams coherent laser forms identical angle theta between the three beams coherent laser, and the three beams coherent laser is respectively provided with identical polarization direction, and converge in simultaneously on the transparent electrode thin film of LED chip；By giving Nd：One or more pulse of YAG laser, has eventually formed the photonic crystal with some cycles T and pore size.This method can once complete to prepare photonic crystal in chip surface, and technique is simple, convenient and swift, without burying, post-treating and other steps；The prepared photonic crystal cycle is controllable, and the photonic crystal that the cycle is 300nm μm is can obtain by changing the scope of angle theta；Working (finishing) area is big, processing low cost, it is adaptable to mass, large-scale production.
Description
Technical field
The present invention relates to photonic crystal field, more particularly, to a kind of preparation method of LED photonic crystal.
Background technology
Photonic crystal refers to the artificial periodic dielectric structures with photon band gap characteristic, and photonic crystal is to improve
One of important way of GaN base blue-ray LED light extraction efficiency.In theory, photonic crystal improve light extraction efficiency of LED be utilize with
The corresponding photonic band gap structure of the LED output light wavelengths, by the way that the guided wave mould being limited in luminescent layer is converted into spoke
Penetrate mould realization.The LED of given output light wavelength, the photon with specific lattice types and geometry is prepared on its surface
Crystal, typically require the photonic crystal of the structure has photon band gap at optical wavelength (or frequency) place.It is existing to prepare photon crystalline substance
The method of body mostly uses the methods such as beamwriter lithography, holographic lithography, seems to be easier to realize from technological angle, but right
In the LED of visible-range, the photon of centre wavelength is caused to be in band gap, the cycle of photonic crystal wants small and arrives wavelength fraction
Yardstick, generally more than 100 nanometer, realize that the process equipment of this nanoscale is complicated, processing step is more, and cost
High, output is small, is not easy to mass, large-scale production.
The content of the invention
The present invention for solve it is of the prior art prepare photonic crystal nanometer process technology difficulty it is big, processing step is complicated,
Cost is high, there is provided a kind of preparation method of LED photonic crystal the problem of be unfavorable for large-scale production.
The technical proposal of the invention is realized in this way：A kind of preparation method of LED photonic crystal, methods described includes adopting
Use Nd：The frequency tripled laser Shu Zuowei direct etching laser of YAG laser, wavelength is λ, is divided into three beams coherent laser through beam splitter,
Any two beams coherent laser forms identical angle theta between the three beams coherent laser, and the three beams coherent laser is respectively provided with phase
Same polarization direction, and converge in simultaneously on the transparent electrode thin film of LED chip；By giving Nd：YAG laser one is more
Individual pulse, has eventually formed the photonic crystal with some cycles T and pore size.
Further, the beam splitter is divided into three beams coherent laser and comprised the following steps：
A, the frequency tripled laser beam are divided into the first light beam and the second light beam after diaphragm by the first beam splitter；
B, first light beam are divided into the 3rd light beam and the 4th light beam by the second beam splitter；Second light beam passes through
Three beam splitters are divided into the 5th light beam and the 6th light beam；
C, the 3rd light beam, the 4th light beam and the 5th light beam respectively by polarizer, speculum modulation after simultaneously
On the transparent electrode thin film for converging the LED chip, i.e. the 3rd light beam is after the first polarizer through the first speculum reflection
Into the 7th beam light, the 4th light beam is passed through after being reflected through the second speculum through the second polarizer the 8th beam light of formation, and the 5th light beam
The 9th beam light is reflected to form through the 3rd speculum after crossing the 3rd polarizer, the last 7th beam light, the 8th beam light and the 9th
There is Shu Guang identical polarization direction and same phase or phase difference to be 2 π integral multiple, and converge the LED chip simultaneously
On transparent electrode thin film.
Further, the 6th light beam is directly inputted into light power meter, for detecting and monitoring Nd：The work(of YAG laser
Rate.
Further, the relation between angle and the photonic crystal cycle T is
Further, the scope of the angle theta is 10 °~40 °.
Further, the Nd is given：The number of pulses of YAG laser is more, the aperture of the photonic crystal of the formation
It is bigger.
Further, the angle bisection for the three-dimensional cone angle that the 7th light beam, the 8th light beam and the 9th light beam three are formed
Line direction is consistent with the transparent electrode thin film normal to a surface direction of the LED chip.
The present invention has the advantages that relative to prior art：
(1) present invention process can once complete to prepare photonic crystal in chip surface, and technique is simple, convenient and swift, nothing
Need to bury, post-treating and other steps；
(2) the photonic crystal cycle prepared by the present invention is controllable, and can obtain the cycle by changing the scope of angle theta is
The photonic crystal of 300nm- numbers μm, compared with the LED chip without photonic crystal, the LED chip luminous power for having photonic crystal is carried
High 50-110%；
(3) working (finishing) area of present invention process is big, process low cost, it is adaptable to mass, large-scale production.
Brief description of the drawings
Fig. 1 is the light path schematic diagram that the inventive method prepares LED photonic crystal.
Wherein, G, diaphragm, F1, the first beam splitter, F2, the second beam splitter, F3, the 3rd beam splitter, B1, the first polarizer,
B2, the second polarizer, B3, the 3rd polarizer, S1, the first speculum, S2, the second speculum, S3, the 3rd speculum L, luminous power
Meter.
Embodiment
With reference to embodiment and accompanying drawing, the present invention is described in further detail, but embodiments of the present invention are not
It is limited to this.
Embodiment 1
As shown in figure 1, using Nd：The frequency tripled laser beam (355nm) of YAG laser is as direct etching laser, in GaN cores
On piece, different cycles, the photonic crystal of different depth of triangular crystal lattice, the frequency tripled laser Shu Jing are prepared on the ito layer
Cross after diaphragm G, be divided into the first light beam and the second light beam by the first beam splitter F1；First light beam passes through the second beam splitter F2
It is divided into the 3rd light beam and the 4th light beam；Second light beam is divided into the 5th light beam and the 6th light beam by the 3rd beam splitter F3；Institute
State the 6th light beam and be directly inputted into light power meter L, for detecting and monitoring Nd：The power of YAG laser.3rd light beam,
Four light beams and the 5th light beam converge the transparency electrode of the LED chip simultaneously after respectively being modulated by polarizer, speculum
On film, i.e. the 3rd light beam reflects to form the 7th beam light, the 4th light beam warp after the first polarizer B1 through the first speculum S1
Passed through after second speculum S2 reflections through the second polarizer B2 the 8th beam light of formation, and the 5th light beam after the 3rd polarizer B3
3rd speculum S3 reflects to form the 9th beam light, and the last 7th beam light, the 8th beam light and the 9th beam light have identical inclined
Shake direction and same phase or phase difference is 2 π integral multiple, and converges in the transparent electrode thin film of the LED chip simultaneously
On, the angular bisector direction of the three-dimensional cone angle of this three-beam formation and the transparent electrode thin film normal to a surface of the LED chip
Direction is consistent.Any two beams coherent laser forms identical angle theta between three beams coherent laser, and the angular range is 10 ° -40 °,
Relation between angle and photonic crystal cycle T isAngle theta is bigger, and the photonic crystal cycle is smaller, gives
Nd：The number of pulses of YAG laser is more, and the aperture of the photonic crystal of formation is bigger.When angle theta=23.68 °, T=0.51
μm, will there are photonic crystal and LED chip without photonic crystal to be tested, in more than threshold voltage 2.4V, in 2.8-4.0V electricity
In the range of pressure, the LED luminous powers of the present embodiment improve 90%.
Embodiment 2
As shown in figure 1, using Nd：The frequency tripled laser Shu Zuowei direct etching laser of YAG laser, on GaN chips,
Different cycles, the photonic crystal of different depth of triangular crystal lattice are prepared in ITO layer, the frequency tripled laser beam passes through diaphragm G
Afterwards, it is divided into the first light beam and the second light beam by the first beam splitter F1；First light beam is divided into by the second beam splitter F2
Three light beams and the 4th light beam；Second light beam is divided into the 5th light beam and the 6th light beam by the 3rd beam splitter F3；Described 6th
Light beam is directly inputted into light power meter L, for detecting and monitoring Nd：The power of YAG laser.3rd light beam, the 4th light beam
And the 5th light beam respectively by being converged on the transparent electrode thin film of the LED chip after polarizer, speculum modulation simultaneously,
That is the 3rd light beam reflects to form the 7th beam light after the first polarizer B1 through the first speculum S1, and the 4th light beam is through the second reflection
Reflected after mirror S2 reflections through the second polarizer B2 the 8th beam light of formation, and the 5th light beam after the 3rd polarizer B3 through the 3rd
Mirror S3 reflects to form the 9th beam light, the last 7th beam light, the 8th beam light and the 9th beam light have identical polarization direction and
Same phase or phase difference are 2 π integral multiple, and converge in simultaneously on the transparent electrode thin film of the LED chip, this three beams
The angular bisector direction of the three-dimensional cone angle of light formation is consistent with the transparent electrode thin film normal to a surface direction of the LED chip.
Any two beams coherent laser forms identical angle theta between three beams coherent laser, and the angular range is 10 ° -40 °, when angle is excellent
Elect 13.68 ° as, the relation between angle and photonic crystal cycle T isT=867nm.Give Nd：YAG swashs
The number of pulses of light device is more, and the aperture of the photonic crystal formed is bigger.To there are photonic crystal and LED core without photonic crystal
Piece is tested, in more than threshold voltage 2.4V, in 2.8-4.0V voltage ranges, and the LED luminous powers of the present embodiment are improved
50%.Embodiment 3
As shown in figure 1, using Nd：The frequency tripled laser Shu Zuowei direct etching laser of YAG laser, on GaN chips,
Different cycles, the photonic crystal of different depth of triangular crystal lattice are prepared in ITO layer, the frequency tripled laser beam passes through diaphragm G
Afterwards, it is divided into the first light beam and the second light beam by the first beam splitter F1；First light beam is divided into by the second beam splitter F2
Three light beams and the 4th light beam；Second light beam is divided into the 5th light beam and the 6th light beam by the 3rd beam splitter F3；Described 6th
Light beam is directly inputted into light power meter L, for detecting and monitoring Nd：The power of YAG laser.3rd light beam, the 4th light beam
And the 5th light beam respectively by being converged on the transparent electrode thin film of the LED chip after polarizer, speculum modulation simultaneously,
That is the 3rd light beam reflects to form the 7th beam light after the first polarizer B1 through the first speculum S1, and the 4th light beam is through the second reflection
Reflected after mirror S2 reflections through the second polarizer B2 the 8th beam light of formation, and the 5th light beam after the 3rd polarizer B3 through the 3rd
Mirror S3 reflects to form the 9th beam light, the last 7th beam light, the 8th beam light and the 9th beam light have identical polarization direction and
Same phase or phase difference are 2 π integral multiple, and converge in simultaneously on the transparent electrode thin film of the LED chip, this three beams
The angular bisector direction of the three-dimensional cone angle of light formation is consistent with the transparent electrode thin film normal to a surface direction of the LED chip.
Any two beams coherent laser forms identical angle theta between three beams coherent laser, and the angular range is 10 ° -40 °, when angle is excellent
Elect 26.68 ° as, the relation between angle and photonic crystal cycle T isThe photonic crystal cycle is 456nm.
Give Nd：The number of pulses of YAG laser is more, and the aperture of the photonic crystal formed is bigger.There to be photonic crystal and unglazed
The LED chip of sub- crystal is tested, in more than threshold voltage 2.4V, in 2.8-4.0V voltage ranges, the LED of the present embodiment
Luminous power improves 110%.
Above-described embodiment is preferably embodiment, but embodiments of the present invention are not by above-described embodiment of the invention
Limitation, other any Spirit Essences for not running counter to the present invention and the change made under principle, modification, replacement, combine, simplification,
Equivalent substitute mode is should be, is included within protection scope of the present invention.
Claims (6)
1. a kind of preparation method of LED photonic crystal, it is characterised in that methods described includes using Nd：The frequency tripling of YAG laser
Laser beam is as direct etching laser, and wavelength is λ, is divided into through beam splitter between three beams coherent laser, the three beams coherent laser
Any two beams coherent laser forms identical angle theta, and the three beams coherent laser is respectively provided with identical polarization direction, and converges simultaneously
On the transparent electrode thin film of LED chip；By giving Nd：One or more pulse of YAG laser, having eventually formed has
Some cycles T and pore size photonic crystal；
The beam splitter is divided into three beams coherent laser and comprised the following steps：
A, the frequency tripled laser beam are divided into the first light beam and the second light beam after diaphragm (G) by the first beam splitter (F1)；
B, first light beam are divided into the 3rd light beam and the 4th light beam by the second beam splitter (F2)；Second light beam passes through
Three beam splitters (F3) are divided into the 5th light beam and the 6th light beam；
C, the 3rd light beam, the 4th light beam and the 5th light beam after polarizer, speculum modulation respectively by converging simultaneously
On the transparent electrode thin film of the LED chip, i.e. the 3rd light beam is anti-by the first speculum (S1) by the first polarizer (B1)
Penetrate to form the 7th beam light, the 4th light beam forms the 8th beam light after reflecting through the second speculum (S2) through the second polarizer (B2), with
And the 5th light beam reflect to form the 9th beam light by the 3rd speculum (S3) by the 3rd polarizer (B3), last 7th beam
The integral multiple that light, the 8th beam light and the 9th beam light have identical polarization direction and same phase or phase difference is 2 π, and together
When converge on the transparent electrode thin film of the LED chip.
2. the preparation method of LED photonic crystal according to claim 1, it is characterised in that the 6th light beam is directly defeated
Enter to light power meter (L), for detecting and monitoring Nd：The power of YAG laser.
3. the preparation method of LED photonic crystal according to claim 1, it is characterised in that the angle and photonic crystal
Relation between cycle T is
4. the preparation method of LED photonic crystal according to claim 1, it is characterised in that the scope of the angle theta is
10 °~40 °.
5. the preparation method of LED photonic crystal according to claim 1, it is characterised in that give the Nd：YAG laser
The number of pulses of device is more, and the aperture of the photonic crystal of the formation is bigger.
6. the preparation method of LED photonic crystal according to claim 1, it is characterised in that the 7th light beam, the 8th light
The angular bisector direction and the transparent electrode thin film surface of the LED chip for the three-dimensional cone angle that beam and the 9th light beam three are formed
Normal direction it is consistent.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510233631.2A CN104795482B (en) | 2015-05-08 | 2015-05-08 | A kind of preparation method of LED photonic crystal |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510233631.2A CN104795482B (en) | 2015-05-08 | 2015-05-08 | A kind of preparation method of LED photonic crystal |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN104795482A CN104795482A (en) | 2015-07-22 |
| CN104795482B true CN104795482B (en) | 2017-10-03 |
Family
ID=53560155
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510233631.2A Expired - Fee Related CN104795482B (en) | 2015-05-08 | 2015-05-08 | A kind of preparation method of LED photonic crystal |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN104795482B (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105403935A (en) * | 2015-12-02 | 2016-03-16 | 山东建筑大学 | Preparation method of white-light three-dimensional photonic crystal and apparatus thereof |
| CN110814515B (en) * | 2019-11-15 | 2021-08-17 | 中南大学 | Hollow microstructure of LED and manufacturing method thereof |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1595232A (en) * | 2004-06-22 | 2005-03-16 | 天津大学 | A method and apparatus for producing three-dimensional photon crystal structure |
| CN1796039A (en) * | 2004-12-29 | 2006-07-05 | 中国科学院理化技术研究所 | Method and system for making multiple period microstructure in photosensitive material by laser |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20050124712A1 (en) * | 2003-12-05 | 2005-06-09 | 3M Innovative Properties Company | Process for producing photonic crystals |
-
2015
- 2015-05-08 CN CN201510233631.2A patent/CN104795482B/en not_active Expired - Fee Related
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1595232A (en) * | 2004-06-22 | 2005-03-16 | 天津大学 | A method and apparatus for producing three-dimensional photon crystal structure |
| CN1796039A (en) * | 2004-12-29 | 2006-07-05 | 中国科学院理化技术研究所 | Method and system for making multiple period microstructure in photosensitive material by laser |
Also Published As
| Publication number | Publication date |
|---|---|
| CN104795482A (en) | 2015-07-22 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN204496118U (en) | A kind of device producing radial polarisation or angle polarized light vortex | |
| CN105171235B (en) | A kind of double focus laser micromachining device and its processing method | |
| CN108031992A (en) | The ultrafast systems of processing of LTCC and its method | |
| TW200923416A (en) | Beam shaping module | |
| CN106695116B (en) | A kind of optics module and laser cutting device | |
| CN104795482B (en) | A kind of preparation method of LED photonic crystal | |
| CN105988261B (en) | A kind of vortex light field generation device | |
| CN204143105U (en) | A kind of high power optical isolator of small size | |
| CN107765375B (en) | Chip based on double-layer grating-fiber perpendicular coupled structure | |
| CN103944048A (en) | Femtosecond laser device based on single cladding neodymium optical fibers and ring cavity and manufacturing method | |
| CN107065213A (en) | A kind of method and device that non-uniform polarisation light beam is produced based on single Amici prism | |
| CN207746571U (en) | The ultrafast systems of processing of LTCC | |
| TWI454331B (en) | Variable depth of field optical system and modulating method and optical method for process material | |
| US20170170623A1 (en) | Potassium fluoroboratoberyllate crystal oblique-incidence laser second harmonic generator | |
| CN103208732B (en) | A kind of laser is changed a device and its is changed point methods with SESAM's | |
| CN204992240U (en) | Fiber laser of phase place biasing ware and applied phase place biasing ware | |
| CN104577681A (en) | Axial cone, optical resonator and laser device | |
| CN102591095A (en) | Ultra-short single-pulse light generator based on photonic crystal crossed beam-splitting waveguide | |
| CN202948213U (en) | Polarization polarizer | |
| CN105048268A (en) | Integrated phase biasing device and optical fiber laser employing same | |
| CN111123559B (en) | Based on Bi4Br4Infrared all-optical modulation device | |
| CN104570377A (en) | Laser chirp pulse beam splitting loop optical grating compressor | |
| CN103887695A (en) | Laser transmitting radial polarized beams based on conical uniaxial crystal | |
| CN104297939B (en) | A kind of for selecting the laser tail mirror assembly angularly polarized | |
| CN104536164B (en) | A kind of vector light beam modulating system and method based on magneto-optic effect |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| EXSB | Decision made by sipo to initiate substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20171003 Termination date: 20200508 |