CN110337194B - Connecting structure of parallel double MOS (Metal oxide semiconductor) tubes and PCBA (printed circuit board assembly) - Google Patents
Connecting structure of parallel double MOS (Metal oxide semiconductor) tubes and PCBA (printed circuit board assembly) Download PDFInfo
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- CN110337194B CN110337194B CN201910676627.1A CN201910676627A CN110337194B CN 110337194 B CN110337194 B CN 110337194B CN 201910676627 A CN201910676627 A CN 201910676627A CN 110337194 B CN110337194 B CN 110337194B
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- 229910044991 metal oxide Inorganic materials 0.000 title description 2
- 150000004706 metal oxides Chemical class 0.000 title description 2
- 239000004065 semiconductor Substances 0.000 title description 2
- RVCKCEDKBVEEHL-UHFFFAOYSA-N 2,3,4,5,6-pentachlorobenzyl alcohol Chemical compound OCC1=C(Cl)C(Cl)=C(Cl)C(Cl)=C1Cl RVCKCEDKBVEEHL-UHFFFAOYSA-N 0.000 claims abstract 14
- 238000003466 welding Methods 0.000 claims description 24
- 239000002184 metal Substances 0.000 claims description 10
- 239000004020 conductor Substances 0.000 abstract description 24
- 238000010438 heat treatment Methods 0.000 abstract description 10
- 238000000034 method Methods 0.000 abstract description 8
- CJDNEKOMKXLSBN-UHFFFAOYSA-N 1-chloro-3-(4-chlorophenyl)benzene Chemical compound C1=CC(Cl)=CC=C1C1=CC=CC(Cl)=C1 CJDNEKOMKXLSBN-UHFFFAOYSA-N 0.000 description 7
- 238000009434 installation Methods 0.000 description 4
- 230000009286 beneficial effect Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 1
- 230000020169 heat generation Effects 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
Classifications
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/18—Printed circuits structurally associated with non-printed electric components
- H05K1/182—Printed circuits structurally associated with non-printed electric components associated with components mounted in the printed circuit board, e.g. insert mounted components [IMC]
- H05K1/184—Components including terminals inserted in holes through the printed circuit board and connected to printed contacts on the walls of the holes or at the edges thereof or protruding over or into the holes
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
- H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
- H05K3/34—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by soldering
- H05K3/3447—Lead-in-hole components
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Connections Effected By Soldering, Adhesion, Or Permanent Deformation (AREA)
Abstract
The invention relates to a connecting structure of parallel double MOS tubes and a PCBA board, wherein the method comprises the steps of connecting conductors with resistance values smaller than pins of the MOS tubes to the same pins of the two MOS tubes, and then connecting the conductors to the PCBA board; the connecting structure comprises two MOS tubes and a PCBA board for installing the MOS tubes, wherein two G pin through holes, one D pin through hole and one S pin through hole are formed in the PCBA board, and the respective G pins of the two MOS tubes are correspondingly inserted into the two G pin through holes on the PCBA board one by one and are welded and connected; the D pins of the two MOS tubes are connected with the D pin through holes after being connected with each other through a D terminal connecting sheet with the resistance value smaller than that of the D pins, and the S pins of the two MOS tubes are connected with the S pin through holes after being connected with each other through an S terminal connecting sheet with the resistance value smaller than that of the S pins. According to the invention, the resistance of the connection between the pins of the MOS tube and the PCBA is reduced, so that the heating value of the pins during the operation of the MOS tube is reduced.
Description
Technical Field
The invention relates to a connecting structure of a parallel double MOS tube and a PCBA board.
Background
The MOS tube is often used for controlling the on-off of large current, and pins D and S of the MOS tube are respectively used for the input and output of a power supply, and pin G outputs driving current, so that the MOS tube is often used in a switch circuit.
In order to reduce the heating value of the switch circuit, two MOS tubes are generally connected in parallel so as to reduce the current flowing through each MOS tube, thereby reducing the overall heating value of the switch circuit, and simultaneously, the bearable current extremum of the switch circuit can be effectively improved, and the usability of the switch is improved.
Two MOS tubes are arranged in the same switch, the two MOS tubes are connected to the PCBA board respectively in a common mode, and then the two MOS tubes are connected in parallel through a preset circuit on the PCBA board, but because the pins of the MOS tubes are relatively slender, a larger resistor is formed by connecting the MOS tubes to the PCBA board, the current of a single MOS tube is reduced after the two MOS tubes are connected in parallel, and the larger resistor of the pins still causes more serious heating.
Disclosure of Invention
The invention aims to solve the technical problems that: the method for connecting the parallel double MOS tubes and the PCBA can effectively relieve the problem of heating of pins of the MOS tubes.
In order to solve the technical problems, the invention adopts the following technical scheme: the method for connecting the parallel double MOS tubes and the PCBA board comprises the steps of connecting a conductor with a resistance value smaller than that of the pins of the MOS tubes with the same pins of the two MOS tubes, and then connecting the conductor to the PCBA board.
As a preferable scheme, the conductor is connected to the root of the MOS tube pin.
As a preferable scheme, a plug welding mode is adopted to weld pins of the MOS tube and conductors connected with the pins on a smaller PCB in advance, so that a fixed module is formed.
As a preferable scheme, the two MOS tubes are oppositely arranged, D pins of the two MOS tubes are close to each other, and the two D pins and a conductor plug connected with the D pins are welded into a whole.
The beneficial effects of the invention are as follows: the parallel MOS tube with the resistance smaller than the pins of the MOS tube is connected with the PCBA plate, so that the resistance of the connection of the MOS tube and the PCBA plate is effectively reduced, and the technical problem that the pins heat when the MOS tube is connected with the PCBA plate is effectively solved.
According to the invention, the conductors are further connected to the root parts of the pins of the MOS tube, so that the length of current flowing through the pins of the MOS tube is further shortened, the resistance value of the connection between the pins of the MOS tube and the PCBA is further reduced, and the heating of the pins is further reduced.
According to the invention, the pins of the MOS tube and the corresponding conductors are welded on the smaller PCB in advance in a plug welding mode, so that a module of the parallel double MOS tube can be formed, the installation and welding of a subsequent process and the PCBA are facilitated, meanwhile, the connection of the pins of the MOS tube and the conductors can be ensured by plug welding, and the resistance value of a connection node is reduced. The plug welding can also effectively avoid the phenomenon that welding liquid flows to cause overlap joint with other pins, and improve the connection quality of the pins and conductors.
The pins of the two MOS tubes are arranged opposite to each other, so that the D pins of the two MOS tubes and the corresponding conductors are welded together to form a whole, the conductivity of the welded node is further improved, the resistance of the welded node is reduced, and the heating of the D pins is reduced.
The invention further solves the technical problems that: the utility model provides a connect structure of parallelly connected two MOS pipes and PCBA board, this structure can effectively alleviate MOS pipe pin problem of generating heat.
In order to solve the technical problems, the invention adopts the following technical scheme: the connecting structure of the parallel double MOS tubes and the PCBA comprises two MOS tubes and a PCBA board for installing the MOS tubes, wherein two G pin through holes are formed in the PCBA board and correspond to the G pins of the two MOS tubes respectively, one D pin through hole and one S pin through hole, a circuit for connecting the two G pin through holes is preset in the PCBA board, the pins of the two MOS tubes are oppositely arranged, and the respective G pins of the two MOS tubes are inserted into the two G pin through holes on the PCBA board in a one-to-one correspondence manner and are welded;
the D pins of the two MOS tubes are connected with each other through a D terminal connecting piece, the D terminal connecting piece is also provided with a D pin inserted into a D pin through hole, the D pin is connected with the D pin through hole in a welding way, and the resistance of the D terminal connecting piece is smaller than that of the D pin;
the S pins of the two MOS tubes are mutually connected through an S terminal connecting sheet, S pins inserted into the S pin through holes are further arranged on the S terminal connecting sheet, the S pins are connected with the S pin through holes in a welding mode, and the resistance of the S terminal connecting sheet is smaller than that of the S pins.
As a preferable scheme, the D terminal connecting piece is connected to the root of any D pin to shorten the distance of the current flowing through the D pin.
As a preferred scheme, the connecting structure further comprises a PCB board, a D pin connecting hole and two S pin connecting holes are formed in the PCB board, metal sleeves are fixedly arranged on the inner side walls of the D pin connecting hole and the S pin connecting hole respectively, a D connector inserted into the D pin connecting hole is arranged on the D terminal connecting piece, and the D connector and the two D pins are inserted into the metal sleeves in the D pin connecting hole together and are connected through welding; the two S pin connecting holes are respectively in one-to-one correspondence with the S pins of the two MOS tubes, S connectors which are in one-to-one correspondence with the two S pin connecting holes are arranged on the S terminal connecting piece, and the S pin and the S connector which are corresponding to any S pin connecting hole are plugged in the metal sleeve in the S pin connecting hole together and are connected through welding
The beneficial effects of the invention are as follows: through passing through the D terminal connection piece interconnect that a resistance is less than arbitrary D pin with the D pin of two MOS pipes respectively, then with D terminal connection piece welding to D pin via hole in, realize the parallelly connected of two D pins and with being connected of PCBA board, reduce the connecting resistance of D pin and PCBA board, reduce the D pin calorific capacity.
Similarly, the S pins of the two MOS tubes are connected with each other through the S terminal connecting piece with the resistance smaller than that of any S pin, and then the S terminal connecting piece is welded into the S pin through hole, so that the parallel connection of the two S pins and the connection with the PCBA board are realized, the connection resistance of the S pins and the PCBA board is reduced, and the heating value of the S pins is reduced.
In the invention, because the G pin of the MOS tube is used for transmitting signal current and belongs to low current, the G pin is directly connected with the PCBA board and does not generate much heat.
The invention further connects the S terminal connecting sheet at the root parts of the two S pins, and connects the D terminal connecting sheet at the root parts of the two D pins, so as to reduce the distance between the current flowing through the D pins and the S pins, reduce the resistance value and reduce the heating value of the S pins and the D pins.
According to the invention, the two S pins and the corresponding S joints are subjected to plug welding in advance on the PCB, and the two D pins and the corresponding D joints are subjected to plug welding in advance on the PCB, so that the two MOS tubes, the S terminal connecting pieces, the D terminal connecting pieces and the PCB form a module, and the installation and welding of the subsequent PCBA are facilitated.
Drawings
The invention is described in further detail below with reference to the attached drawing figures, wherein:
FIG. 1 is a schematic diagram of a connection structure of a parallel double MOS tube and a PCBA board;
FIG. 2 is a rear view of the schematic of the connection structure of FIG. 1;
fig. 3 is a schematic diagram of a connection structure of a parallel double MOS transistor and a PCBA board mounted with a PCB board.
In fig. 1 to 3: 1. MOS pipe, 2, PCBA board, 3, G pin via hole, 4, G pin, 5, D pin via hole, 6, S pin via hole, 7, D pin, 8, D terminal connection piece, 9, D pin, 10, S pin, 11, S terminal connection piece, 12, S pin, 13, PCB board, 14, D pin connection hole, 15, S pin connection hole, 16, metal sleeve, 17, D joint, 18, S joint.
Detailed Description
Specific embodiments of the present invention are described in detail below with reference to the accompanying drawings.
Example 1:
the method for connecting the parallel double MOS tubes and the PCBA board comprises the steps of connecting a conductor with a resistance value smaller than that of the pins of the MOS tubes with the same pins of the two MOS tubes, and then connecting the conductor to the PCBA board.
The conductor is preferably connected to the root of the MOS tube pin.
Preferably, the pins of the MOS tube and the conductors connected with the pins are welded on a smaller PCB in advance in a plug welding mode to form a fixed module.
Preferably, the two MOS tubes are oppositely arranged, the D pins of the two MOS tubes are close to each other, and the two D pins and the conductor plug connected with the D pins are welded into a whole.
The specific implementation process of the method is described in detail below by taking fig. 1-3 as examples.
As shown in fig. 1, two S pins 10 are connected by using an S terminal connection piece 11 with a resistance value smaller than that of the S pin 10 of the MOS transistor 1, then the S terminal connection piece 11 is connected with the PCBA board 2, and similarly, two D pins 7 are connected by using a D terminal connection piece 8 with a resistance value smaller than that of the D pin 7 of the MOS transistor 1, and then the D terminal connection piece 8 is connected with the PCBA board 2.
Because the G pin 4 of the MOS transistor 1 is used for transmitting signal current and belongs to low current, the G pin 4 is directly connected with the PCBA board 2 and does not generate much heat, so in this embodiment, the G pin 4 is directly connected with the PCBA board 2, and of course, a conductor with a resistance value smaller than that of the G pin may be used to connect the two G pins 4 and then connect with the PCBA board 2.
As can be seen from fig. 1, the S terminal connection piece 11 is connected to the root portions of the two S pins 10, and the D terminal connection piece 8 is connected to the root portions of the two D pins 7, so that the length of the current flowing through the S pins 10 and the D pins 7 can be shortened, the resistance can be reduced, and the heat generation amount of the S pins 10 and the D pins 7 can be reduced.
As shown in FIG. 1, two MOS tubes 1 are oppositely arranged, in the invention, the pins of the two MOS tubes are opposite, as shown in FIG. 3, two D pins 7 and one D connector 17 are welded on a PCB 13 together to realize firmer connection and lower flow resistance, and as two S pins 10 are far away from each other, the two S pins 7 cannot be welded together as the two D pins 7 are welded together, therefore, the two S pins 10 are welded on the PCB 13 with the corresponding S connectors respectively, by the connection mode, the connection strength of the MOS tubes is enhanced, the connection resistance value of the MOS tubes 1 and the PCBA board 2 is reduced, and the heat productivity of the S pins 10 and the D pins 7 of the MOS tubes 1 in operation is reduced.
Example 2:
the connecting structure of the parallel dual-MOS tube and the PCBA shown in the figures 1 and 2 comprises two MOS tubes 1 and a PCBA 2 for installing the MOS tubes 1, wherein two G pin through holes 3 are formed in the PCBA 2 and correspond to the G pins 4 of the two MOS tubes respectively, one D pin through hole 5 and one S pin through hole 6, a circuit for connecting the two G pin through holes 3 is preset in the PCBA 2, the pins of the two MOS tubes 1 are oppositely arranged, and the respective G pins 4 of the two MOS tubes 1 are correspondingly inserted into the two G pin through holes 3 in the PCBA 2 one by one and are welded;
the respective D pins 7 of the two MOS tubes 1 are connected with each other through a D terminal connecting sheet 8, the D terminal connecting sheet 8 is also provided with a D pin 9,D pin 9 inserted into the D pin through hole 5 and is welded with the D pin through hole 5, the connection position of the D terminal connecting sheet 8 and the D pin 7 is provided with a groove capable of accommodating the D pin 7, and the D pin 7 is embedded into the groove and then connected in a welding mode. The resistance of the D terminal connecting sheet 8 is smaller than that of the D pin 7;
the S pins 10 of the two MOS tubes 1 are mutually connected through an S terminal connecting sheet 11, S pins 12 inserted into the S pin through holes 6 are further arranged on the S terminal connecting sheet 11, the S pins 12 are welded with the S pin through holes 6, grooves capable of containing the S pins 10 are formed in the positions, connected with the S pins 10, of the S terminal connecting sheet 11, and the S pins 10 are embedded into the grooves and then are connected in a welding mode. The resistance of the S terminal connection piece 11 is smaller than that of the S pin 10.
The D terminal connection piece 8 is connected to the root of any D pin 7 to shorten the distance of the current flowing through the D pin 7.
As shown in fig. 3, a further improvement of the connection structure is shown in fig. 3, a PCB 13 is additionally arranged on the connection structure shown in fig. 1, a D pin connection hole 14 and two S pin connection holes 15 are arranged on the PCB 13, metal sleeves 16 are fixedly arranged on the inner side walls of the D pin connection hole 14 and the S pin connection hole 15 respectively, a D connector 17 inserted into the D pin connection hole 14 is arranged on the D terminal connection piece 8, and the D connector 17 and the two D pins 7 are inserted into the metal sleeves 16 in the D pin connection hole 14 together and are connected through welding; the two S pin connecting holes 15 are respectively in one-to-one correspondence with the S pins 10 of the two MOS tubes 1, S joints 18 which are in one-to-one correspondence with the two S pin connecting holes 15 are arranged on the S terminal connecting piece 11, and the S pins 10 and the S joints 18 which are corresponding to any S pin connecting hole 15 are inserted into the metal sleeve 16 in the S pin connecting hole 15 together and are connected through welding.
Due to the adoption of the PCB 13, the two MOS tubes 1, the S terminal connecting piece 11, the D terminal connecting piece 8 and the PCB 13 form a module, so that the installation and welding of the subsequent process and the PCBA 2 are facilitated, and the connection strength of the MOS tubes 1 is enhanced.
The working principle of the invention is as follows: the low-resistance conductor is adopted to connect the root parts of the same pins of the MOS tube 1 and then the conductor is connected with the PCBA 2, so that the resistance value of the connection between the MOS tube 1 and the PCBA 2 is reduced, the heating value of the pins of the MOS tube 1 is reduced, meanwhile, the adopted conductor is thicker, so that the connection between the conductor and the PCBA 2 is firmer, the connection stability of the MOS tube 1 is improved, the two MOS tubes 1 and the conductor are further connected in advance through the PCB 13 to form modularization, the connection strength of the MOS tube 1 is further enhanced, and the convenience in the installation and welding of the subsequent MOS tube and the PCBA 2 is improved. The conductors are the D terminal connecting piece 8 and the S terminal connecting piece 11 shown in fig. 1-3; the pins described herein are the D pin 7 and the S pin 10 shown in fig. 1 to 3.
The above embodiments are merely illustrative of the principles and effects of the present invention, and some of the applied embodiments, and are not intended to limit the invention; it should be noted that modifications and improvements can be made by those skilled in the art without departing from the inventive concept, and these are all within the scope of the present invention.
Claims (3)
1. The connecting structure of the parallel double MOS tubes and the PCBA comprises two MOS tubes (1) and a PCBA (2) for installing the MOS tubes (1), and is characterized in that two G pin through holes (3) are formed in the PCBA (2), the G pins (4) of the two MOS tubes are respectively corresponding to one D pin through hole (5) and one S pin through hole (6), a circuit for connecting the two G pin through holes (3) is preset on the PCBA (2), pins of the two MOS tubes (1) are oppositely arranged, and the respective G pins (4) of the two MOS tubes (1) are inserted into the two G pin through holes (3) on the PCBA (2) in a one-to-one correspondence manner and are connected in a welding manner;
the D pins (7) of the two MOS tubes (1) are connected with each other through a D terminal connecting sheet (8), D pins (9) inserted into the D pin through holes (5) are further arranged on the D terminal connecting sheet (8), the D pins (9) are welded with the D pin through holes (5), and the resistance of the D terminal connecting sheet (8) is smaller than that of the D pins (7);
s pins (10) of the two MOS tubes (1) are connected with each other through an S terminal connecting sheet (11), S pins (12) inserted into S pin through holes (6) are further arranged on the S terminal connecting sheet (11), the S pins (12) are connected with the S pin through holes (6) in a welded mode, and the resistance of the S terminal connecting sheet (11) is smaller than that of the S pins (10).
2. The structure for connecting the parallel double MOS transistors and the PCBA board according to claim 1, wherein the D terminal connecting piece (8) is connected to the root of any D pin (7) to shorten the distance of the current flowing through the D pin (7).
3. The connecting structure of the parallel double-MOS tube and the PCBA as claimed in claim 1, further comprising a PCB (13), wherein a D pin connecting hole (14) and two S pin connecting holes (15) are formed in the PCB (13), metal sleeves (16) are fixedly arranged on the inner side walls of the D pin connecting hole (14) and the S pin connecting holes (15) respectively, a D connector (17) inserted into the D pin connecting hole (14) is arranged on the D terminal connecting piece (8), and the D connector (17) and the two D pins (7) are connected in the metal sleeves (16) in the D pin connecting hole (14) in an inserted mode through welding; the two S pin connecting holes (15) are respectively in one-to-one correspondence with the S pins (10) of the two MOS tubes (1), S connectors (18) which are in one-to-one correspondence with the two S pin connecting holes (15) are arranged on the S terminal connecting piece (11), and the S pins (10) and the S connectors (18) which are corresponding to any S pin connecting hole (15) are plugged in the metal sleeves (16) in the S pin connecting holes (15) together and are connected through welding.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910676627.1A CN110337194B (en) | 2019-07-25 | 2019-07-25 | Connecting structure of parallel double MOS (Metal oxide semiconductor) tubes and PCBA (printed circuit board assembly) |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910676627.1A CN110337194B (en) | 2019-07-25 | 2019-07-25 | Connecting structure of parallel double MOS (Metal oxide semiconductor) tubes and PCBA (printed circuit board assembly) |
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| CN110337194A CN110337194A (en) | 2019-10-15 |
| CN110337194B true CN110337194B (en) | 2024-02-13 |
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| Publication number | Publication date |
|---|---|
| CN110337194A (en) | 2019-10-15 |
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