CN110335951A - A kind of phosphor-sensitized fluorescent Organic Light Emitting Diode - Google Patents
A kind of phosphor-sensitized fluorescent Organic Light Emitting Diode Download PDFInfo
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- H10K50/00—Organic light-emitting devices
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- H10K50/12—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers comprising dopants
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Abstract
The invention belongs to Organic Light Emitting Diode fields, disclose a kind of phosphor-sensitized fluorescent Organic Light Emitting Diode.The phosphor-sensitized fluorescent Organic Light Emitting Diode includes the substrate stacked gradually, anode, hole injection layer, hole transmission layer, electronic barrier layer, luminescent layer, electron transfer layer, electron injecting layer and cathode；The luminescent layer is made of the main body luminescent material that phosphorescent sensitizer and fluorescent guest adulterate.Device according to the present invention combines method of the co-doped in main body using phosphor material and fluorescent material, realizes 100% exciton utilization rate, and the OLEDs of preparation is made to have the characteristics that high efficiency and low roll-off.
Description
Technical field
The invention belongs to Organic Light Emitting Diode fields, and in particular to a kind of phosphor-sensitized fluorescent Organic Light Emitting Diode.
Background technique
Organic Light Emitting Diode (Organic Light-Emitting Diodes, OLEDs) is that one kind is partly led based on organic
The electroluminescent device of body material.OLEDs is since with self-luminous, high colour gamut, high efficiency, ultra-thin, light-weight, preparation process is simple
Single, at low cost, foldable bending and the advantages that be easy to large-area manufacturing, it is considered to be the following very important display and solid shine
Bright technology.Currently, OLEDs display, mobile phone screen and in terms of applied.
Fluorescence OLEDs is widely studied due to having the characteristics that overlength stability and cheap cost.However, according to by
Spin statistics are theoretical, and conventional fluorescent material only has 25% singlet exciton that can shine, therefore maximum with the OLEDs of its preparation
External quantum efficiency does not exceed 5%, limits its application.Fluorescence with triplet state-triplet state annihilation (TTA) characteristics of luminescence
62.5% interior quantum effect may be implemented although two triplet excitons, which are buried in oblivion, can be converted into a singlet exciton in material
Rate, but maximum external quantum efficiency still only has 12.5%.Thermal activation delayed fluorescence material, due to its small singlet and triplet state
Energy level difference, triplet excitons can be transformed into singlet exciton by anti-intersystem crossing, and the utilization of 100% exciton has been achieved
Rate.But it is very serious with the efficiency roll-off of the OLEDs of thermal activation delayed fluorescence material preparation under high illumination, and device is steady
It is qualitative to need further to verify.In contrast, being considered as using the method that phosphorescence or thermal activation delayed fluorescence are sensitized
The effective ways for preparing high efficiency fluorescence OLEDs, by the way that the triplet exciton energy on sensitizing molecules is effectively passed to fluorescence
The singlet of molecule, equally realizes the fluorescent emission of 100% exciton, but at present there are still the serious problem of efficiency roll-off and
Lack general design principle.
Summary of the invention
In place of the above shortcoming and defect of the existing technology, the purpose of the present invention is to provide a kind of sensitizations of phosphorescence
Fluorescence Organic Light Emitting Diode.Its main feature is that introducing phosphor material in fluorescent material as sensitizer, phosphor material energy is utilized
It is enough that triplet excitons are made full use of by orbit coupling effect, the singlet exciton of generation and triplet excitons are sufficiently transmitted
To fluorescent material and radioluminescence, high efficiency and the low OLEDs to roll-off can be obtained in this way.
The object of the invention is achieved through the following technical solutions:
A kind of phosphor-sensitized fluorescent Organic Light Emitting Diode, including substrate, anode, hole injection layer, the sky stacked gradually
Cave transport layer, electronic barrier layer, luminescent layer, electron transfer layer, electron injecting layer and cathode；The luminescent layer is by phosphorescent sensitizer
It is constituted with the main body luminescent material of fluorescent guest doping.
The device architecture schematic diagram of phosphor-sensitized fluorescent OLEDs of the invention is as shown in Figure 1.
Further, in the luminescent layer, the triplet of main body luminescent material is higher than the triplet state of phosphorescent sensitizer
The singlet energy level of energy level and fluorescent guest, the triplet of phosphorescent sensitizer are higher than the singlet energy level of fluorescent guest, phosphorus
Highest occupied molecular orbital (HOMO) energy level of photosensitizer is deeper than the HOMO energy level of fluorescent guest.
Further, the luminescent layer is blue light-emitting, and main body luminescent material is 26DCzPPy (2,6- bis- ((9H-
Carbazole -9- base) -3,1- phenylene) pyridine), phosphorescent sensitizer is fac-Ir (iprpmi)3(three [1- (2,6- cumene)-
2- phenyl -1H- imidazoles] close iridium (III)), fluorescent guest is TBPe (Isosorbide-5-Nitrae, 7,10- tetra-tert perylenes)；Or the hair
Photosphere is green light emitting layer, and main body luminescent material is CDBP (4,4 '-bis- (9- carbazyls) -2,2 '-dimethyl diphenyls) and PO-
Composition is blended in T2T, and phosphorescent sensitizer is Ir (mppy)3(three [5- methyl -2- (2- pyridyl group) phenyl] close iridium (III)), fluorescence
Object is TTPA (three [4- (2- thienyl) phenyl] amine；Three [4- (2- thienyl) phenyl] amine)；Or the luminescent layer is yellow light
Luminescent layer, main body luminescent material is mCBP (3,3 '-two (9H- carbazole -9- bases) -1,1 '-biphenyl) and composition is blended in PO-T2T,
Phosphorescent sensitizer is Ir (ppy)3(three (2- phenylpyridines) close iridium (III)), fluorescent guest be TBRb (2,8- di-t-butyl -5,
(4- the tert-butyl benzene) -6,12- diphenyl of 11- bis- aphthacene)；Or the luminescent layer is red light luminescent layer, main body luminescent material
For 4P-NPB (N4, the N4 " -1- naphthalene of '-two-N4, N4 " '-diphenyl-[1,1 ': 4 ', 1 ": 4 ", 1 " '-quaterphenyl] -4,4 " '-two
Amine) and PO-T2T be blended composition, phosphorescent sensitizer be Ir (tptpy)2(acac) ((4- (the 4- tert-butyl-benzene of acetopyruvic acid two
Base)-thiophene [3,2-C] pyridine-C2, N) close iridium (III)), fluorescent guest is DCJTB (the tertiary fourth of (E) -4- dintrile methylene -2-
Base -6- (1,1,7,7- tetramethyl julolidine vinyl) pyrans).
Further, the weight ratio that the CDBP and PO-T2T is blended is 1:1；The weight that the mCBP and PO-T2T is blended
Amount ratio is 1:1；The weight ratio that the 4P-NPB and PO-T2T is blended is 1:1.
Further, phosphorescent sensitizer in the blue light-emitting, green light emitting layer, Yellow light emitting layer and red light luminescent layer
Doping concentration be respectively 8wt%, 5wt%, 9wt% and 8wt%；The blue light-emitting, green light emitting layer, Yellow light emitting layer
Doping concentration with fluorescent guest in red light luminescent layer is respectively 1wt%, 1wt%, 3wt% and 0.5wt%.
Further, the substrate be glass, quartz, polyimides, polyethylene terephthalate, metal, alloy or
Any one in stainless steel film.
Further, the anode and cathode can select metal or metal oxide: the metal can be selected
Golden (Au), silver-colored (Ag), aluminium (Al) or silver-colored magnesium alloy；The metal oxide can be tin indium oxide (ITO), zinc oxide
(ZnO), one of fluorine-doped tin dioxide (FTO) and gallium zinc oxide (IGZO).
Further, the hole injection layer can be used organic material HAT-CN (2,3,6,7,10,11- six cyano-Isosorbide-5-Nitrae,
5,8,9,2- azepine benzophenanthrenes) perhaps CuPc (CuPc) or use inorganic material MoO3(molybdenum oxide), WO3(tungsten oxide) or
Person V2O5(vanadic anhydride).
Further, the hole transmission layer is TAPC (4,4 '-cyclohexyl two [N, N- bis- (4- aminomethyl phenyl) aniline]),
Electronic barrier layer is TCTA (4,4 ', 4 "-three (carbazole -9- base) triphenylamine).
Further, the electron transfer layer can use TPBi (1,3,5- tri- (1- phenyl -1H- benzimidazolyl-2 radicals-yl)
Benzene) or PO-T2T (2,4,6- tri- [3- (diphenylphosphine oxygroup) phenyl] -1,3,5- triazole).
Further, LiF (lithium fluoride), Liq (8-hydroxy-quinoline lithium), Cs can be used in the electron injecting layer2CO3(carbonic acid
Caesium) or Li2CO3(lithium carbonate).
Further, the hole injection layer with a thickness of 10~15nm, hole transmission layer with a thickness of 50~70nm, electricity
Sub- barrier layer with a thickness of 5~10nm, light emitting layer thickness is 15~30nm, electron transfer layer with a thickness of 40~60nm, electronics
Implanted layer with a thickness of 1~3nm, cathode with a thickness of 80~120nm.
Phosphor-sensitized fluorescent OLEDs of the invention have the following advantages and the utility model has the advantages that
(1) device according to the present invention combines side of the co-doped in main body using phosphor material and fluorescent material
Method realizes 100% exciton utilization rate, and the OLEDs of preparation is made to have the characteristics that high efficiency and low roll-off.
(2) present invention is by the selection of reasonable material and the design of device architecture, can be realized blue and green light, yellow light and
The phosphor-sensitized fluorescent OLEDs of four kinds of colors of feux rouges has generality, provides a kind of new way to prepare efficient OLEDs
Diameter.
Detailed description of the invention
Fig. 1 is the device architecture schematic diagram of phosphor-sensitized fluorescent OLEDs of the invention.Wherein 1 substrate is represented, 2 represent sun
Pole, 3 represent hole injection layer, and 4 represent hole transmission layer, and 5 represent electronic barrier layer, and 6 represent luminescent layer, and 7 represent electron-transport
Layer, 8 represent electron injecting layer, and 9 represent cathode.
Fig. 2 is the obtained phosphor-sensitized fluorescent OLEDs device of the embodiment of the present invention 1~4 in 1000cd/m2Under brightness
Electroluminescent light spectrogram.
Fig. 3 is current density-brightness-electricity of the obtained phosphor-sensitized fluorescent OLEDs device of the embodiment of the present invention 1~4
Press performance diagram.
Fig. 4 is current efficiency-light characteristic of the obtained phosphor-sensitized fluorescent OLEDs device of the embodiment of the present invention 1~4
Curve graph.
Fig. 5 is that the obtained phosphor-sensitized fluorescent of the embodiment of the present invention 1~4 has power efficiency-brightness of OLEDs device special
Linearity curve figure.
Fig. 6 is that external quantum efficiency-brightness of the obtained phosphor-sensitized fluorescent OLEDs device of the embodiment of the present invention 1~4 is special
Linearity curve figure.
Specific embodiment
Present invention will now be described in further detail with reference to the embodiments and the accompanying drawings, but embodiments of the present invention are unlimited
In this.
Embodiment 1
A kind of phosphor-sensitized fluorescent Nan dian Yao s (device B) of the present embodiment, first with cleaning agent to ITO electro-conductive glass
Then ultrasound cleaning 90 minutes rinses ITO electro-conductive glass with deionized water, with being dried with nitrogen, be put into baking oven and toast 30 minutes,
Then ITO electro-conductive glass is put into vacuum coating equipment after being handled 6 minutes with UV ozone, when the pressure of vacuum coating system is low
In 1 × 10-4When Pa, start evaporated film.Using specific mask plate, hole injection layer is successively deposited on ITO electro-conductive glass
Material HAT-CN, hole transport layer material TAPC, electronic blocking layer material TCTA, emitting layer material 26DCzPPy:8wt%fac-
Ir(iprpmi)3: 1wt%TBPe, electron transport layer materials TPBi, electron injecting layer material LiF and cathode material Al.Vapor deposition is each
The rate and thickness of a functional layer using quartz crystal oscillator film thickness detector control, hole injection layer HAT-CN with a thickness of 15nm,
Hole transmission layer TAPC with a thickness of 60nm, electronic barrier layer TCTA with a thickness of 10nm, luminescent layer 26DCzPPy:8wt%
fac-Ir(iprpmi)3: 1wt%TBPe with a thickness of 20nm, electron transfer layer TPBi with a thickness of 40nm, electron injecting layer
LiF with a thickness of 1nm and Al cathode with a thickness of 100nm.Obtained device architecture are as follows: ITO/HAT-CN (15nm)/TAPC
(60nm)/TCTA (10nm)/26DCzPPy:8wt%fac-Ir (iprpmi)3: 1wt%TBPe (20nm)/TPBi (40nm)/
LiF(1nm)/Al(100nm).Device transmitting is derived from the blue light of TBPe fluorescent molecule well, in 1000cd/m2Brightness
Under electroluminescent light spectrogram, current density-brightness-voltage characteristic curve graph, current efficiency-luminosity response figure, power
Ciency-luminance performance diagram, external quantum efficiency-luminosity response figure are respectively as shown in Fig. 2, Fig. 3, Fig. 4, Fig. 5 and Fig. 6.
Embodiment 2
A kind of phosphor-sensitized fluorescent OLEDs (device G) of the present embodiment, first with cleaning agent to ITO electro-conductive glass ultrasound
Then cleaning 90 minutes rinses ITO electro-conductive glass with deionized water, with being dried with nitrogen, be put into baking oven baking 30 minutes, then
ITO electro-conductive glass is put into vacuum coating equipment after being handled 6 minutes with UV ozone.When the pressure of vacuum coating system is lower than 1
×10-4When Pa, start evaporated film.Using specific mask plate, hole injection layer material is successively deposited on ITO electro-conductive glass
HAT-CN, hole transport layer material TAPC, electronic blocking layer material TCTA and CDBP, emitting layer material CDBP:PO-T2T:
5wt%Ir (mppy)3: 1wt%TTPA, electron transport layer materials PO-T2T, electron injecting layer material LiF and cathode material Al.
Be deposited each functional layer rate and thickness using quartz crystal oscillator film thickness detector control, hole injection layer HAT-CN with a thickness of
15nm, hole transmission layer TAPC with a thickness of 60nm, electronic barrier layer TCTA with a thickness of 5nm and CDBP with a thickness of 5nm, hair
Photosphere CDBP:PO-T2T:5wt%Ir (mppy)3: 1wt%TTPA with a thickness of 20nm, electron transfer layer PO-T2T with a thickness of
45nm, electron injecting layer LiF with a thickness of 1nm and Al cathode with a thickness of 100nm.Obtained device architecture are as follows: ITO/HAT-
CN (15nm)/TAPC (60nm)/TCTA (5nm)/CDBP (5nm)/CDBP:PO-T2T:5wt%Ir (mppy)3: 1wt%TTPA
(20nm)/PO-T2T(45nm)/LiF(1nm)/Al(100nm).Device transmitting is well derived from the green of TTPA fluorescent molecule
Light, in 1000cd/m2Brightness under electroluminescent light spectrogram, current density-brightness-voltage characteristic curve graph, electric current effect
Rate-luminosity response figure, power efficiency-luminosity response figure, external quantum efficiency-luminosity response figure respectively as Fig. 2,
Shown in Fig. 3, Fig. 4, Fig. 5 and Fig. 6.
Embodiment 3
A kind of phosphor-sensitized fluorescent OLEDs (device Y) of the present embodiment, first with cleaning agent to ITO electro-conductive glass ultrasound
Then cleaning 90 minutes rinses ITO electro-conductive glass with deionized water, with being dried with nitrogen, be put into baking oven baking 30 minutes, then
ITO electro-conductive glass is put into vacuum coating equipment after being handled 6 minutes with UV ozone.When the pressure of vacuum coating system is lower than 1
×10-4When Pa, start evaporated film.Using specific mask plate, hole injection layer material is successively deposited on ITO electro-conductive glass
HAT-CN, hole transport layer material TAPC, electronic blocking layer material TCTA and mCBP, emitting layer material mCBP:PO-T2T:
9wt%Ir (ppy)3: 3wt%TBRb, electron transport layer materials PO-T2T, electron injecting layer material liF and cathode material Al.It steams
Plate each functional layer rate and thickness using quartz crystal oscillator film thickness detector control, hole injection layer HAT-CN with a thickness of
15nm, hole transmission layer TAPC with a thickness of 60nm, electronic barrier layer TCTA with a thickness of 5nm and mCBP with a thickness of 5nm, hair
Photosphere mCBP:PO-T2T:9wt%Ir (ppy)3: 3wt%TBRb with a thickness of 20nm, electron transfer layer PO-T2T with a thickness of
45nm, electron injecting layer LiF with a thickness of 1nm and Al cathode with a thickness of 100nm.Obtained device architecture are as follows: ITO/HAT-
CN (15nm)/TAPC (60nm)/TCTA (5nm)/mCBP (5nm)/mCBP:PO-T2T:9wt%Ir (ppy)3: 3wt%TBRb
(20nm)/PO-T2T(45nm)/LiF(1nm)/Al(100nm).Device transmitting is derived from the Huang of TBRb fluorescent molecule well
Light, in 1000cd/m2Brightness under electroluminescent light spectrogram, current density-brightness-voltage characteristic curve graph, electric current effect
Rate-luminosity response figure, power efficiency-luminosity response figure, external quantum efficiency-luminosity response figure respectively as Fig. 2,
Shown in Fig. 3, Fig. 4, Fig. 5 and Fig. 6.
Embodiment 4
A kind of phosphor-sensitized fluorescent OLEDs (device R) of the present embodiment, first with cleaning agent to ITO electro-conductive glass ultrasound
Then cleaning 90 minutes rinses ITO electro-conductive glass with deionized water, with being dried with nitrogen, be put into baking oven baking 30 minutes, then
ITO electro-conductive glass is put into vacuum coating equipment after being handled 6 minutes with UV ozone.When the pressure of vacuum coating system is lower than 1
×10-4When Pa, start evaporated film.Using specific mask plate, hole injection layer material is successively deposited on ITO electro-conductive glass
HAT-CN, hole transport layer material TAPC, electronic blocking layer material TCTA and 4P-NPB, emitting layer material 4P-NPB:PO-T2T:
8wt%Ir (tptpy)2(acac): 0.5wt%DCJTB, electron transport layer materials PO-T2T, electron injecting layer material liF and yin
Pole materials A l.The rate and thickness that each functional layer is deposited are controlled using quartz crystal oscillator film thickness detector, prepare hole note respectively
Enter layer HAT-CN with a thickness of 15nm, hole transmission layer TAPC with a thickness of 60nm, electronic barrier layer TCTA with a thickness of 5nm and
4P-NPB with a thickness of 8nm, luminescent layer 4P-NPB:PO-T2T:8wt%Ir (tptpy)2(acac): the thickness of 0.5wt%DCJTB
Degree is the thickness with a thickness of 1nm and Al cathode with a thickness of 45nm, electron injecting layer LiF of 20nm, electron transfer layer PO-T2T
For 100nm.Obtained device architecture are as follows: ITO/HAT-CN (15nm)/TAPC (60nm)/TCTA (5nm)/4P-NPB (8nm)/
4P-NPB:PO-T2T:8wt%Ir (tptpy)2(acac): 0.5wt%DCJTB (20nm)/PO-T2T (45nm)/LiF (1nm)/
Al(100nm).Device transmitting is derived from the feux rouges of DCJTB fluorescent molecule well, in 1000cd/m2Brightness under it is electroluminescent
Luminescent spectrum figure, current density-brightness-voltage characteristic curve graph, current efficiency-luminosity response figure, power efficiency-brightness
Performance diagram, external quantum efficiency-luminosity response figure are respectively as shown in Fig. 2, Fig. 3, Fig. 4, Fig. 5 and Fig. 6.
The electroluminescent properties of the resulting phosphor-sensitized fluorescent OLEDs of above-described embodiment 1~4 are as shown in table 1:
aSequence is followed successively by maximum value, in 1000cd/m2Value under brightness and in 5000cd/m2Value under brightness.
Fig. 2~6 by way of with phosphor-sensitized fluorescent it can be seen that can prepare blue high efficiency light, green light, yellow light
With four kinds of monochromatic OLEDs of feux rouges, and obtaining maximum external quantum efficiency is respectively 12.1%, 13.1%, 17.0% and
18.9%, in 1000cd/m2Brightness under be maintained at 11.5%, 10.3%, 14.3% and 15.4, and in 5000cd/m2It is bright
Still have 10.3%, 8.5%, 12.0% and 14.0% under degree.Show higher efficiency simultaneously, efficiency rolling under high illumination
Drop is also substantially improved, it was demonstrated that phosphor-sensitized fluorescent method proposed by the present invention preparation high efficiency, the low OLEDs that roll-offs it is excellent
More performance has huge application prospect and application value.
The above embodiment is a preferred embodiment of the present invention, but embodiments of the present invention are not by above-described embodiment
Limitation, other any changes, modifications, substitutions, combinations, simplifications made without departing from the spirit and principles of the present invention,
It should be equivalent substitute mode, be included within the scope of the present invention.
Claims (10)
1. a kind of phosphor-sensitized fluorescent Organic Light Emitting Diode, it is characterised in that: the phosphor-sensitized fluorescent organic light-emitting diodes
Pipe include stack gradually substrate, anode, hole injection layer, hole transmission layer, electronic barrier layer, luminescent layer, electron transfer layer,
Electron injecting layer and cathode；The luminescent layer is made of the main body luminescent material that phosphorescent sensitizer and fluorescent guest adulterate.
2. a kind of phosphor-sensitized fluorescent Organic Light Emitting Diode according to claim 1, it is characterised in that: the luminescent layer
In, the triplet of main body luminescent material is higher than the triplet of phosphorescent sensitizer and the singlet energy level of fluorescent guest,
The triplet of phosphorescent sensitizer is higher than the singlet energy level of fluorescent guest, and the HOMO energy level of phosphorescent sensitizer is deeper than fluorescence visitor
The HOMO energy level of body.
3. a kind of phosphor-sensitized fluorescent Organic Light Emitting Diode according to claim 1, it is characterised in that: the luminescent layer
For blue light-emitting, main body luminescent material is 26DCzPPy, and phosphorescent sensitizer is fac-Ir (iprpmi)3, fluorescent guest is
TBPe；Or the luminescent layer is green light emitting layer, main body luminescent material is that composition, phosphorescent sensitizer is blended in CDBP and PO-T2T
For Ir (mppy)3, fluorescent guest TTPA；Or the luminescent layer is Yellow light emitting layer, main body luminescent material is mCBP and PO-
Composition is blended in T2T, and phosphorescent sensitizer is Ir (ppy)3, fluorescent guest TBRb；Or the luminescent layer is red light luminescent layer, master
Body luminescent material is that composition is blended in 4P-NPB and PO-T2T, and phosphorescent sensitizer is Ir (tptpy)2(acac), fluorescent guest is
DCJTB。
4. a kind of phosphor-sensitized fluorescent Organic Light Emitting Diode according to claim 3, it is characterised in that: the CDBP and
The weight ratio that PO-T2T is blended is 1:1；The weight ratio that the mCBP and PO-T2T is blended is 1:1；The 4P-NPB and PO-
The weight ratio that T2T is blended is 1:1.
5. a kind of phosphor-sensitized fluorescent Organic Light Emitting Diode according to claim 3, it is characterised in that: the blue light hair
In photosphere, green light emitting layer, Yellow light emitting layer and red light luminescent layer the doping concentration of phosphorescent sensitizer be respectively 8wt%,
5wt%, 9wt% and 8wt%；Fluorescent guest in the blue light-emitting, green light emitting layer, Yellow light emitting layer and red light luminescent layer
Doping concentration be respectively 1wt%, 1wt%, 3wt% and 0.5wt%.
6. a kind of phosphor-sensitized fluorescent Organic Light Emitting Diode according to claim 1, it is characterised in that: the substrate is
Any one in glass, quartz, polyimides, polyethylene terephthalate, metal, alloy or stainless steel film；It is described
Anode and cathode is selected from one of gold, silver, aluminium, silver-colored magnesium alloy, ITO, ZnO, FTO and IGZO.
7. a kind of phosphor-sensitized fluorescent Organic Light Emitting Diode according to claim 1, it is characterised in that: the hole note
Enter layer and uses organic material HAT-CN perhaps CuPc or use inorganic material MoO3、WO3Or V2O5。
8. a kind of phosphor-sensitized fluorescent Organic Light Emitting Diode according to claim 1, it is characterised in that: the hole passes
Defeated layer is TAPC, electronic barrier layer TCTA.
9. a kind of phosphor-sensitized fluorescent Organic Light Emitting Diode according to claim 1, it is characterised in that: the electronics passes
Defeated layer uses TPBi or PO-T2T；The electron injecting layer uses LiF, Liq, Cs2CO3Or Li2CO3。
10. described in any item a kind of phosphor-sensitized fluorescent Organic Light Emitting Diodes according to claim 1~9, it is characterised in that:
The hole injection layer with a thickness of 10~15nm, hole transmission layer with a thickness of 50~70nm, electronic barrier layer with a thickness of 5
~10nm, light emitting layer thickness are 15~30nm, electron transfer layer with a thickness of 40~60nm, electron injecting layer with a thickness of 1~
3nm, cathode with a thickness of 80~120nm.
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111081890A (en) * | 2019-12-16 | 2020-04-28 | 华南理工大学 | Phosphorescence-sensitized fluorescent white light organic light-emitting diode and preparation method thereof |
| CN111916569A (en) * | 2020-06-23 | 2020-11-10 | 华南理工大学 | Full-fluorescence white-light organic light emitting diode and preparation method thereof |
| CN112820834A (en) * | 2019-11-15 | 2021-05-18 | 乐金显示有限公司 | Organic light emitting device and display device using the same |
| CN113540371A (en) * | 2021-06-07 | 2021-10-22 | 清华大学 | Organic electroluminescent device and display device |
| CN115101684A (en) * | 2022-05-07 | 2022-09-23 | 华南理工大学 | Organic light-emitting diode and preparation method and application thereof |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1585580A (en) * | 2004-06-03 | 2005-02-23 | 清华大学 | Organic electro-white light device and producing method thereof |
| CN101461075A (en) * | 2006-06-05 | 2009-06-17 | 普林斯顿大学理事会 | Organic light-emitting device with a phosphor-sensitized fluorescent emission layer |
| CN101635334A (en) * | 2009-08-19 | 2010-01-27 | 电子科技大学 | Red organic electroluminescence device and preparation method thereof |
-
2019
- 2019-06-20 CN CN201910535208.6A patent/CN110335951B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1585580A (en) * | 2004-06-03 | 2005-02-23 | 清华大学 | Organic electro-white light device and producing method thereof |
| CN101461075A (en) * | 2006-06-05 | 2009-06-17 | 普林斯顿大学理事会 | Organic light-emitting device with a phosphor-sensitized fluorescent emission layer |
| CN101635334A (en) * | 2009-08-19 | 2010-01-27 | 电子科技大学 | Red organic electroluminescence device and preparation method thereof |
Non-Patent Citations (3)
| Title |
|---|
| D’ ANDRADE ET AL.: "High-efficiency yellow double-doped organic light-emitting devices based on phosphor-sensitized fluorescence", 《APPL. PHYS. LETT.》 * |
| M. A. BALDO ET AL.: "High-efficiency fluorescent organic light-emitting devices using a phosphorescent sensitizer", 《NATURE》 * |
| PAUL HEIMEL ET AL.: "Unicolored phosphor-sensitized fluorescence for efficient and stable blue OLEDs", 《NATURE COMMUNICATION》 * |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112820834A (en) * | 2019-11-15 | 2021-05-18 | 乐金显示有限公司 | Organic light emitting device and display device using the same |
| CN111081890A (en) * | 2019-12-16 | 2020-04-28 | 华南理工大学 | Phosphorescence-sensitized fluorescent white light organic light-emitting diode and preparation method thereof |
| CN111916569A (en) * | 2020-06-23 | 2020-11-10 | 华南理工大学 | Full-fluorescence white-light organic light emitting diode and preparation method thereof |
| CN111916569B (en) * | 2020-06-23 | 2022-01-18 | 华南理工大学 | Full-fluorescence white-light organic light emitting diode and preparation method thereof |
| CN113540371A (en) * | 2021-06-07 | 2021-10-22 | 清华大学 | Organic electroluminescent device and display device |
| WO2022257817A1 (en) * | 2021-06-07 | 2022-12-15 | 清华大学 | Organic electroluminescent device and display apparatus |
| CN115101684A (en) * | 2022-05-07 | 2022-09-23 | 华南理工大学 | Organic light-emitting diode and preparation method and application thereof |
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