CN104835916A - Highly-efficient organic electroluminescent device based on fluorescence doped luminescent layer - Google Patents
Highly-efficient organic electroluminescent device based on fluorescence doped luminescent layer Download PDFInfo
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- 239000000463 material Substances 0.000 claims abstract description 65
- 230000005540 biological transmission Effects 0.000 claims abstract description 10
- 239000000758 substrate Substances 0.000 claims abstract description 10
- NRCMAYZCPIVABH-UHFFFAOYSA-N Quinacridone Chemical class N1C2=CC=CC=C2C(=O)C2=C1C=C1C(=O)C3=CC=CC=C3NC1=C2 NRCMAYZCPIVABH-UHFFFAOYSA-N 0.000 claims abstract description 6
- 230000004888 barrier function Effects 0.000 claims abstract description 4
- 238000005401 electroluminescence Methods 0.000 claims description 17
- PRWATGACIORDEL-UHFFFAOYSA-N 2,4,5,6-tetra(carbazol-9-yl)benzene-1,3-dicarbonitrile Chemical compound C12=CC=CC=C2C2=CC=CC=C2N1C1=C(C#N)C(N2C3=CC=CC=C3C3=CC=CC=C32)=C(N2C3=CC=CC=C3C3=CC=CC=C32)C(N2C3=CC=CC=C3C3=CC=CC=C32)=C1C#N PRWATGACIORDEL-UHFFFAOYSA-N 0.000 claims description 15
- 230000027756 respiratory electron transport chain Effects 0.000 claims description 10
- 239000002019 doping agent Substances 0.000 claims description 8
- 230000005525 hole transport Effects 0.000 claims description 7
- 238000002360 preparation method Methods 0.000 claims description 5
- UJOBWOGCFQCDNV-UHFFFAOYSA-N 9H-carbazole Chemical compound C1=CC=C2C3=CC=CC=C3NC2=C1 UJOBWOGCFQCDNV-UHFFFAOYSA-N 0.000 claims description 4
- 125000000217 alkyl group Chemical group 0.000 claims description 4
- AWXGSYPUMWKTBR-UHFFFAOYSA-N 4-carbazol-9-yl-n,n-bis(4-carbazol-9-ylphenyl)aniline Chemical group C12=CC=CC=C2C2=CC=CC=C2N1C1=CC=C(N(C=2C=CC(=CC=2)N2C3=CC=CC=C3C3=CC=CC=C32)C=2C=CC(=CC=2)N2C3=CC=CC=C3C3=CC=CC=C32)C=C1 AWXGSYPUMWKTBR-UHFFFAOYSA-N 0.000 claims description 3
- 101000837344 Homo sapiens T-cell leukemia translocation-altered gene protein Proteins 0.000 claims description 3
- 102100028692 T-cell leukemia translocation-altered gene protein Human genes 0.000 claims description 3
- 239000011248 coating agent Substances 0.000 claims description 3
- 238000000576 coating method Methods 0.000 claims description 3
- ODHXBMXNKOYIBV-UHFFFAOYSA-N triphenylamine Chemical compound C1=CC=CC=C1N(C=1C=CC=CC=1)C1=CC=CC=C1 ODHXBMXNKOYIBV-UHFFFAOYSA-N 0.000 claims description 3
- QMXFUIUEGUOSEV-UHFFFAOYSA-N 3,4,5,6-tetra(carbazol-9-yl)benzene-1,2-dicarbonitrile Chemical compound N#Cc1c(C#N)c(c(c(c1-n1c2ccccc2c2ccccc12)-n1c2ccccc2c2ccccc12)-n1c2ccccc2c2ccccc12)-n1c2ccccc2c2ccccc12 QMXFUIUEGUOSEV-UHFFFAOYSA-N 0.000 claims description 2
- CINYXYWQPZSTOT-UHFFFAOYSA-N 3-[3-[3,5-bis(3-pyridin-3-ylphenyl)phenyl]phenyl]pyridine Chemical compound C1=CN=CC(C=2C=C(C=CC=2)C=2C=C(C=C(C=2)C=2C=C(C=CC=2)C=2C=NC=CC=2)C=2C=C(C=CC=2)C=2C=NC=CC=2)=C1 CINYXYWQPZSTOT-UHFFFAOYSA-N 0.000 claims description 2
- ZOKIJILZFXPFTO-UHFFFAOYSA-N 4-methyl-n-[4-[1-[4-(4-methyl-n-(4-methylphenyl)anilino)phenyl]cyclohexyl]phenyl]-n-(4-methylphenyl)aniline Chemical compound C1=CC(C)=CC=C1N(C=1C=CC(=CC=1)C1(CCCCC1)C=1C=CC(=CC=1)N(C=1C=CC(C)=CC=1)C=1C=CC(C)=CC=1)C1=CC=C(C)C=C1 ZOKIJILZFXPFTO-UHFFFAOYSA-N 0.000 claims description 2
- 229910001316 Ag alloy Inorganic materials 0.000 claims description 2
- 239000004411 aluminium Substances 0.000 claims description 2
- 229910052782 aluminium Inorganic materials 0.000 claims description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical group [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 2
- 230000000903 blocking effect Effects 0.000 claims description 2
- DMBHHRLKUKUOEG-UHFFFAOYSA-N diphenylamine Chemical class C=1C=CC=CC=1NC1=CC=CC=C1 DMBHHRLKUKUOEG-UHFFFAOYSA-N 0.000 claims description 2
- SJCKRGFTWFGHGZ-UHFFFAOYSA-N magnesium silver Chemical compound [Mg].[Ag] SJCKRGFTWFGHGZ-UHFFFAOYSA-N 0.000 claims description 2
- 238000004020 luminiscence type Methods 0.000 abstract description 4
- 229910052751 metal Inorganic materials 0.000 abstract description 3
- 239000002184 metal Substances 0.000 abstract description 3
- 150000003384 small molecules Chemical class 0.000 abstract description 3
- 230000005284 excitation Effects 0.000 abstract 2
- 238000000034 method Methods 0.000 description 20
- 238000004506 ultrasonic cleaning Methods 0.000 description 16
- 230000008569 process Effects 0.000 description 15
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 12
- 238000000151 deposition Methods 0.000 description 9
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 8
- 230000003111 delayed effect Effects 0.000 description 8
- 230000007246 mechanism Effects 0.000 description 8
- 230000005281 excited state Effects 0.000 description 7
- 238000010586 diagram Methods 0.000 description 6
- 230000000052 comparative effect Effects 0.000 description 5
- 239000011521 glass Substances 0.000 description 5
- 238000007725 thermal activation Methods 0.000 description 5
- 238000004140 cleaning Methods 0.000 description 4
- 239000008367 deionised water Substances 0.000 description 4
- 229910021641 deionized water Inorganic materials 0.000 description 4
- 238000001035 drying Methods 0.000 description 4
- 239000012530 fluid Substances 0.000 description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 4
- 239000000975 dye Substances 0.000 description 3
- 229910052739 hydrogen Inorganic materials 0.000 description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 239000007850 fluorescent dye Substances 0.000 description 2
- 230000005283 ground state Effects 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 238000005086 pumping Methods 0.000 description 2
- 238000001228 spectrum Methods 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
- QPZYNVHZZYFXRT-UHFFFAOYSA-N C1=CC=CC=C1.C1(=CC=CC=C1)C=1NC2=C(N1)C=CC=C2 Chemical compound C1=CC=CC=C1.C1(=CC=CC=C1)C=1NC2=C(N1)C=CC=C2 QPZYNVHZZYFXRT-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000010406 cathode material Substances 0.000 description 1
- 238000004040 coloring Methods 0.000 description 1
- 230000001808 coupling effect Effects 0.000 description 1
- 238000003996 delayed luminescence Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 229910052741 iridium Inorganic materials 0.000 description 1
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 1
- IBHBKWKFFTZAHE-UHFFFAOYSA-N n-[4-[4-(n-naphthalen-1-ylanilino)phenyl]phenyl]-n-phenylnaphthalen-1-amine Chemical class C1=CC=CC=C1N(C=1C2=CC=CC=C2C=CC=1)C1=CC=C(C=2C=CC(=CC=2)N(C=2C=CC=CC=2)C=2C3=CC=CC=C3C=CC=2)C=C1 IBHBKWKFFTZAHE-UHFFFAOYSA-N 0.000 description 1
- 229910000510 noble metal Inorganic materials 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 238000005424 photoluminescence Methods 0.000 description 1
- 239000011295 pitch Substances 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 238000006862 quantum yield reaction Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000001044 red dye Substances 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- 230000001052 transient effect Effects 0.000 description 1
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/60—Organic compounds having low molecular weight
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
- H10K50/12—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers comprising dopants
- H10K50/121—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers comprising dopants for assisting energy transfer, e.g. sensitization
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/60—Organic compounds having low molecular weight
- H10K85/649—Aromatic compounds comprising a hetero atom
- H10K85/657—Polycyclic condensed heteroaromatic hydrocarbons
- H10K85/6572—Polycyclic condensed heteroaromatic hydrocarbons comprising only nitrogen in the heteroaromatic polycondensed ring system, e.g. phenanthroline or carbazole
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K2101/00—Properties of the organic materials covered by group H10K85/00
- H10K2101/20—Delayed fluorescence emission
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- Spectroscopy & Molecular Physics (AREA)
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- Optics & Photonics (AREA)
- Electroluminescent Light Sources (AREA)
Abstract
The invention relates to a device structure of an organic light-emitting diode (OLED), and especially relates to a highly-efficient organic electroluminescent device based on a fluorescence doped luminescent layer. The organic electroluminescent device comprises a transparent substrate, a transparent anode, a cavity transmission layer, a first exciton barrier layer, a luminescent layer, a second exciton barrier layer, an electronic transmission layer, an electronic injecting layer and a metal cathode. The luminescent layer is formed by mixing a main body and a guest body. The main body material is organic small molecules whose energy difference between a first kind single heavy excitation state and a triplet excitation state is quite small. The guest body material is dye molecules with high fluorescence efficiency, like quinacridone derivatives. The highly-efficient organic electroluminescent device based on a fluorescence doped luminescent layer is advantageous in that the external quantum efficiency exceeds 5% of theoretic limit efficiency of a conventional fluorescence device, and the luminescence efficiency of a fluorescent OLED device can be effectively improved; the luminescent device of the invention is high in brightness, low in starting voltage, high in efficiency, and low in efficiency roll-off.
Description
Technical field
The invention belongs to organic electroluminescence device technical field, be specifically related to a kind of organic electroluminescence device (OLED), such organic electroluminescence device utilizes has thermal activation delayed fluorescence (TADF, ThermallyActivated Delayed Fluorescence) organic material of characteristic adulterates as material of main part and quinacridone fluorescent material and prepares the luminescent layer of organic electroluminescence device, and device has very high efficiency.
Background technology
Organic electroluminescence device (OLEDs, Organic Light Emitting Diods) utilizes the luminescence in conjunction with the exciton of generation again of electronics and hole.Infer according to electron spin statistical law, the ratio of its singlet excitons produced and triplet exciton is 1:3, typically, during use small molecule fluorescent luminescent material, it only can utilize the singlet excitons of wherein 25%, and remaining triplet exciton of 75% loses because of radiationless transition.So the organic electroluminescence device internal quantum efficiency of general fluorescent material is no more than 25%.And for phosphor material, it utilizes the spin coupling effect of heavy atom, the energy of singlet excited is transferred in triplet excited state by intersystem crossing (ISC), and then by triplet excited state luminescence and phosphorescence, therefore device internal quantum efficiency can reach 100% in theory.But, because high efficiency electromechanical phosphorescent material must contain the noble metal such as iridium, platinum, there is fatal shortcoming that is expensive, natural resources shortage.In addition, current navy blue electromechanical phosphorescent material performance (colorimetric purity, efficiency and stability) is poor.So develop some aboundresources and comparatively cheap stable high efficiency electroluminous organic small molecular material seems very important.
The current fluorescence OLED that can realize the internal quantum efficiency restriction of breakthrough 25% mainly have employed delayed fluorescence mechanism, and it effectively can utilize the triplet excited state energy in device.Its mechanism mainly contains two classes, one class is TTA (Triplet-Triplet Annihilation, T-T annihilation) machine-processed (see D.Kondakov, T.D.Pawlik, T.K.Hatwar, and J.P.Spindler, J.Appl.Phys., 2009,106,124510).Another kind of is that TADF (Thermally Activated Delayed Fluorescence, thermal activation delayed fluorescence) mechanism is (see H.Uoyama, K.Goushi, K.Shizu, H.Nomura, C.Adachi, Nature., 2012,492,234).TTA mechanism utilizes two triplet excitons to merge to produce singlet excitons, improve the mechanism that singlet excitons generates ratio, but the maximum internal quantum efficiency of its device only has 40% ~ 62.5%.TADF mechanism utilizes to have less singlet state-triplet energy level difference (Δ E
sT) organic small molecule material, its triplet exciton is converted into the mechanism of singlet excitons under environment thermal energy by reverse intersystem crossing (RISC) this process.Its device internal quantum efficiency can reach 100% in theory.But its device under high illumination efficiency roll-off is comparatively large, limit its application in total colouring and white-light illuminating.
Conventional fluorescent dye molecule often has very high fluorescence quantum yield, but its doping OLED internal quantum efficiency owing to being limited to 25%, and external quantum efficiency is generally lower than 5%, and also there is a big difference with the efficiency of phosphorescent devices.As red dye DCM (see C.W.Tang, S.A.VanSlyke, and C.H.Chen, J.Appl.Phys., 1989,65,3610; U.S.Pat.No.5,908,581), device efficiency <10cd/A; Green glow dyestuff quinacridone (see U.S.Pat.No.5,227,252; 5,593,788; CN1482127A; CN1219778; CN1660844), device efficiency <20cd/A etc.
Current TADF molecule is entrained in the material of main part of broad stopband mainly as guest materials and realizes high efficiency thermal activation delayed fluorescence (see Q.Zhang, J.Li, K.Shizu, S.Huang, S.Hirata, H.Miyazaki, C.Adachi, J.Am.Chem.Soc.2012,134,14706, H.Uoyama, K.Goushi, K.Shizu, H.Nomura, C.Adachi, Nature., 2012,492,234, T.Nishimoto, T.Yasuda, S.Y.Lee, R.Kondo, C.Adachi, Mater.Horiz., 2014, 1, 264), also there is bibliographical information to it can be used as the material of main part of phosphor material to use and there is bipolar transmission character, the carrier mobility that can realize comparatively balancing is (see D.D.Zhang, L.Duan, D.Q.Zhang, J.Qiao, G.F.Dong, L.D.Wang, Y.Qiu, OrganicElectronics., 2013, 14, 260), and it can be used as the OLED of the material of main part of fluorescent material comparatively rare (see D.D.Zhang, L.Duan, C.Li, Y.L.Li, H.Y.Li, D.Q.Zhang, Y.Qiu, Adv.Mater.2014, 26, 5050, patent WO 2012133188 A1).
Summary of the invention
In order to solve the lower problem of conventional fluorescent dyestuff device efficiency, the object of the invention is to utilize and have singlet state-triplet energy level difference and be less than the thermal activation delayed fluorescence material of 0.3eV as fluorescence OLED material of main part, the quinacridone guest materials by doping with high efficiency photoluminescence quantum efficiency prepares luminescent layer.The electroexcitation state produced in material of main part in electrical pumping situation realizes the transformation of triplet excited state to singlet excited by the physical process of thermal activation delayed fluorescence, then arrives object by main body
energy trasfer makes doped with fluorescent dyes molecule be in singlet excited, finally, the fluorescence doping molecule being in singlet excited gets back to ground state in the mode of radiation transistion, high efficiency electroluminescent fluorescent is achieved, thus improve the luminous efficiency of fluorescence OLED, the efficiency of electrochromic fluorescent devices can reach the level of electro phosphorescent device.
Principle of the present invention is:
In device of the present invention, utilize the organic molecule with TADF characteristic to adulterate as material of main part and fluorescent material and prepare the luminescent layer of organic electroluminescence device, the doping content of fluorescent material is 0.5-1.0%, the ratio of the singlet excited generated in TADF material of main part in electrical pumping situation and triplet excited state is classified as 1:3, because TADF material of main part its triplet excited state under environment thermal energy with less singlet state-triplet energy level difference is converted into singlet excited by inverse intersystem crossing (RISC) process, when TADF material of main part and doped luminescent material have good energy match relation, between host molecule to guest molecule, the leading mechanism of energy trasfer is long-range
type energy trasfer, i.e. singlet state-singlet energy branch mode.Based on above-mentioned principle, guest molecule not only can obtain the energy of the main body singlet excited directly generated, also can obtain the energy of the triplet exciton being converted into singlet excitons via RISC process, its internal quantum efficiency also can reach 100% in theory, and detailed process as shown in Figure 1.Wherein solid line is advantageous process, and dotted line is unfavorable process, pitches as energy loss process.S
0, H, S
0, Gbe respectively the ground state level of material of main part and guest materials, S
1, H, S
1, Gbe respectively the singlet excited energy level of material of main part and guest materials, T
1, H, T
1, Gthe triplet excited state energy level of material of main part and guest materials respectively, ISC is intersystem crossing process, and RISC is inverse intersystem crossing process, and PF is transient luminescence, and DF is delayed luminescence, and NR is nonradiative transition, and ET is energy transfer process.
Technical solution of the present invention is:
Organic electroluminescence device structure is for prepare nesa coating, hole transmission layer, the first exciton barrier-layer, luminescent layer, the second exciton barrier-layer, electron transfer layer, electron injecting layer and negative electrode successively on a transparent substrate.Wherein luminescent layer is the film of the material doped preparation of Subjective and Objective, and material of main part adopts TADF material 4CzIPN, 4CzPN or 2CzPN (see Nature, 2012,492,235), it is characterized by singlet state-triplet energy level difference Δ E
sT<0.1eV, dopant material adopts quinacridone derivative (QA) dye molecule DR1DR-QA or DR1DR2DR-QA with high fluorescence quantum efficiency, doping content is 0.3 ~ 1.5% (weight percentage), and the thickness range of luminescent layer is 15 ~ 40nm.
In above formula, R
4it is the straight or branched alkyl of 1 ~ 10 carbochain; R
5, R
6the straight or branched alkyl of 1 ~ 6 carbochain, F, Cl, CF respectively
3, carbazole, diphenylamines or triphenylamine.
Typical QA derivative is DFDB-QA, DCF
3dB-QA, TFDB-QA or TCF
3dB-QA etc.
First exciton barrier-layer is that band gap width is greater than 3.0eV and has the material of electronic blocking and hole transport performance, and as TCTA, TAPC or mCP etc., thickness is 3 ~ 20nm.
Second exciton barrier-layer is that band gap width is greater than 3.0eV and has the material of hole barrier and electronic transmission performance, and as TPBi, TmPyPB or BCP etc., thickness is 3 ~ 20nm.
Hole transmission layer is made up of NPB etc., and thickness is 20 ~ 50nm; Electron transfer layer is by BePP
2etc. formation, thickness is 30 ~ 60nm.
The material of electron injecting layer is LiF, and thickness is 0.5 ~ 1nm.
Cathode material can be the active metal such as aluminium, magnesium silver alloy, and its thickness is 200 ~ 2000nm.
The preparation method of organic electroluminescence device of the present invention is as follows:
Adopt the vacuum-deposited method of hot evaporation, prepare nesa coating on a transparent substrate, and control thickness deposition of hole transport layer, the first exciton barrier-layer, luminescent layer, the second exciton barrier-layer, electron transfer layer, electron injecting layer and negative electrode successively.Organic electroluminescence device of the present invention can be used for preparing flat-panel monitor, lighting source, signal lamp or direction board etc.
Accompanying drawing explanation
Fig. 1: electroluminescent device operation principle schematic diagram involved in the present invention;
Fig. 2: the overall structure schematic diagram of OLED of the present invention;
Fig. 3: OLED of the present invention (luminescent layer is 4CzIPN:0.5%DFDB-QA) luminescent spectrum schematic diagram;
Fig. 4: (luminescent layer is 4CzIPN:0.5%TCF to OLED of the present invention
3dB-QA) luminescent spectrum schematic diagram;
Fig. 5: OLED of the present invention (luminescent layer is 4CzIPN:0.5%DFDB-QA) current efficiency-brightness-power efficiency schematic diagram;
Fig. 6: OLED luminescent layer of the present invention is 4CzIPN:0.5%TCF
3dB-QA) current efficiency-brightness-power efficiency schematic diagram.
The structure of electroluminescent device prepared by the present invention as shown in Figure 1, each component names is: clear glass or other transparent substrates 1, attachment ITO (indium tin oxide) anode 2 on a transparent substrate, NPB (N, N'-bis-(1-naphthyl)-N, N'-diphenyl-1, 1'-biphenyl-4, 4'-diamines) hole transmission layer 3, TCTA (4, 4', 4 "-three (9-carbazyl) triphenylamine), first exciton barrier-layer 4, the luminescent layer 5 of material of the present invention, second exciton barrier-layer 6, between three (phenylbenzimidazol) benzene (TPBI) electron transfer layer 7, LiF electron injecting layer 8, metal A l is as negative electrode 9.
Comparative device luminescent layer material of main part used is Alq
3.
Electroluminescent device adopts the material of main part 4CzIPN with TADF characteristic and fluorescent material DFDB-QA to adulterate the maximum power efficiency 53.4lm/W of the electroluminescent device prepared in the present invention, and utilization does not have the material of main part of TADF characteristic as Alq
3to adulterate the maximum power efficiency 11.6lm/W of the electroluminescent device prepared with DFDB-QA, the former efficiency is 4.6 times (see embodiments 1) of the latter.Above-mentioned implementation, adopts the material of main part with TADF characteristic can improve the efficiency of electroluminescent device with fluorescent material Proper Match very significantly with adulterating.
Embodiment
The following examples have the material of main part of TADF characteristic and fluorescence dopant material constructs luminescent layer and prepares high efficiency electroluminescent device to enumerate typical example to illustrate to utilize, instead of utilize embodiment to limit the present invention.
Embodiment 1: device [ITO/NPB/mCP/4CzIPN:0.5%DFDB-QA/BCP/BePP
2/ LiF/Al]
By thick for 15mm × 15mm × 1mm ITO conducting glass substrate ITO cleaning fluid ultrasonic cleaning 5 minutes, deionized water ultrasonic cleaning 5 minutes, acetone ultrasonic cleaning 20 minutes, isopropyl alcohol ultrasonic cleaning 20 minutes.After drying, plasma (plasma) processes 5 minutes.In high vacuum 5 × 10
-5deposition of hole transport layer NPB successively under Pa, thickness is 35nm; First exciton barrier-layer mCP, thickness is 5nm; The method depositing light emitting layer that double source steams altogether, wherein material of main part is 4CzIPN, and object dopant material is DFDB-QA, and doping content is 0.5% (weight percentage), and thickness is 30nm; Second exciton barrier-layer BCP, thickness is 5nm; Electron transfer layer BePP
2, thickness is 40nm.Deposit electron injecting layer LiF again, thickness is 1nm; Metallic cathode Al, thickness 100nm.This device cut-in voltage is 2.7V, high-high brightness 113100cd/m
2, maximum power efficiency 53.4lm/W.
Comparative device structure [ITO/NPB/mCP/Alq
3: 0.5%DFDB-QA/BCP/BePP
2/ LiF/Al] device cut-in voltage be 3.0V, high-high brightness 46140cd/m
2, maximum power efficiency 11.6lm/W.
Embodiment 2: device [ITO/NPB/mCP/4CzIPN:0.5%TCF
3dB-QA/BCP/BePP
2/ LiF/Al]
By thick for 15mm × 15mm × 1mm ITO conducting glass substrate ITO cleaning fluid ultrasonic cleaning 5 minutes, deionized water ultrasonic cleaning 5 minutes, acetone ultrasonic cleaning 20 minutes, isopropyl alcohol ultrasonic cleaning 20 minutes.After drying, plasma process 5 minutes.In high vacuum 5 × 10
-5deposition of hole transport layer NPB successively under Pa, thickness is 35nm; First exciton barrier-layer mCP, thickness is 5nm; The method depositing light emitting layer that double source steams altogether, wherein material of main part is 4CzIPN, and object dopant material is TCF
3dB-QA, doping content is 0.5% (weight percentage), and thickness is 30nm; Second exciton barrier-layer BCP, thickness is 5nm; Electron transfer layer BePP
2, thickness is 40nm.Deposit electron injecting layer LiF again, thickness is 1nm and metallic cathode Al, thickness 100nm.This device cut-in voltage is 2.8V, high-high brightness 106200cd/m
2, maximum power efficiency 46.1lm/W.
Comparative device structure [ITO/NPB/mCP/Alq
3: 0.5%TCF
3dB-QA/BCP/BePP
2/ LiF/Al] device cut-in voltage be 3.0V, high-high brightness 50240cd/m
2, maximum power efficiency 12.5lm/W.
Embodiment 3: device [ITO/NPB/mCP/4CzIPN:0.5%DCF
3dB-QA/BCP/BePP
2/ LiF/Al]
By thick for 15mm × 15mm × 1mm ITO conducting glass substrate ITO cleaning fluid ultrasonic cleaning 5 minutes, deionized water ultrasonic cleaning 5 minutes, acetone ultrasonic cleaning 20 minutes, isopropyl alcohol ultrasonic cleaning 20 minutes.After drying, plasma process 5 minutes.In high vacuum 5 × 10
-5deposition of hole transport layer NPB successively under Pa, thickness is 35nm; First exciton barrier-layer mCP, thickness is 5nm; The method depositing light emitting layer that double source steams altogether, wherein material of main part is 4CzIPN, and object dopant material is DCF
3dB-QA, doping content is 0.5% (weight percentage), and thickness is 30nm; Second exciton barrier-layer BCP, thickness is 5nm; Electron transfer layer BePP
2, thickness is 40nm.Deposit electron injecting layer LiF again, thickness is 1nm and metallic cathode Al, thickness 100nm.This device cut-in voltage is 3.0V, high-high brightness 96500cd/m
2, maximum power efficiency 45.3lm/W.
Comparative device structure [ITO/NPB/mCP/Alq
3: 0.5%DCF
3dB-QA/BCP/BePP
2/ LiF/Al] device cut-in voltage be 3.2V, high-high brightness 49170cd/m
2, maximum power efficiency 11.6lm/W.
Embodiment 4: device [ITO/NPB/mCP/4CzIPN:0.5%TFDB-QA/BCP/BePP
2/ LiF/Al]
By thick for 15mm × 15mm × 1mm ITO conducting glass substrate ITO cleaning fluid ultrasonic cleaning 5 minutes, deionized water ultrasonic cleaning 5 minutes, acetone ultrasonic cleaning 20 minutes, isopropyl alcohol ultrasonic cleaning 20 minutes.After drying, plasma process minute.In high vacuum 5 × 10
-5deposition of hole transport layer NPB successively under Pa, thickness is 35nm; First exciton barrier-layer mCP, thickness is 5nm; The method depositing light emitting layer that double source steams altogether, wherein material of main part is 4CzIPN, and object dopant material is TFDB-QA, and doping content is 0.5% (weight percentage), and thickness is 30nm; Second exciton barrier-layer BCP, thickness is 5nm; Electron transfer layer BePP
2, thickness is 40nm.Deposit electron injecting layer LiF again, thickness is 1nm and metallic cathode Al, thickness 100nm.This device cut-in voltage is 2.8V, high-high brightness 95300cd/m
2, maximum power efficiency 47.1lm/W.
Comparative device structure [ITO/NPB/mCP/Alq
3: 0.5%TFDB-QA/BCP/BePP
2/ LiF/Al] device cut-in voltage be 3.1V, high-high brightness 50320cd/m
2, maximum power efficiency 12.3lm/W.
Claims (6)
1., based on a high efficiency organic electroluminescence device for fluorescence doping luminescent layer, it is characterized in that: be made up of transparent substrates, nesa coating, hole transmission layer, the first exciton barrier-layer, luminescent layer, the second exciton barrier-layer, electron transfer layer, electron injecting layer and negative electrode successively; Luminescent layer is the film of the material doped preparation of Subjective and Objective, material of main part is structural formula TADF material 4CzIPN, 4CzPN or 2CzPN as follows, dopant material is structural formula quinacridone derivative DR1DR-QA or DR1DR2DR-QA as follows, and doping percetage by weight is 0.3 ~ 1.5%;
Wherein, R
4it is the straight or branched alkyl of 1 ~ 10 carbochain; R
5, R
6the straight or branched alkyl of 1 ~ 6 carbochain, F, Cl, CF respectively
3, carbazole, diphenylamines or triphenylamine.
2. as claimed in claim 1 a kind of based on fluorescence doping luminescent layer high efficiency organic electroluminescence device, it is characterized in that: dopant material is DFDB-QA, DMeDB-QA, TCF
3dB-QA or TMeDB-QA, its structural formula is as follows,
3. as claimed in claim 1 or 2 a kind of based on fluorescence doping luminescent layer high efficiency organic electroluminescence device, it is characterized in that: the first exciton barrier-layer is that band gap width is greater than 3.0eV and has the material of electronic blocking and hole transport performance; Second exciton barrier-layer is that band gap width is greater than 3.0eV and has the material of hole barrier and electronic transmission performance.
4. as claimed in claim 3 a kind of based on fluorescence doping luminescent layer high efficiency organic electroluminescence device, it is characterized in that: the first exciton barrier-layer is TCTA, TAPC or mCP, thickness is 3 ~ 20nm; Second exciton barrier-layer is TPBi, TmPyPB or BCP, and thickness is 3 ~ 20nm; Hole transmission layer is NPB, and thickness is 20 ~ 50nm; Electron transfer layer is BePP
2, thickness is 30 ~ 60nm; Electron injecting layer is LiF, and thickness is 0.5 ~ 3nm; Negative electrode is aluminium or magnesium silver alloy, and thickness is 50 ~ 200nm; The thickness of luminescent layer is 15 ~ 40nm.
5. a kind of high efficiency organic electroluminescence device based on fluorescence doping luminescent layer as described in claim 1,2 or 4, is characterized in that: for the preparation of flat-panel monitor, lighting source, signal lamp or direction board.
6. as claimed in claim 3 a kind of based on fluorescence doping luminescent layer high efficiency organic electroluminescence device, it is characterized in that: for the preparation of flat-panel monitor, lighting source, signal lamp or direction board.
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20120217869A1 (en) * | 2011-02-28 | 2012-08-30 | Kyushu University National University Corporation | Delayed fluorescence material and organic electroluminescence device |
| CN103443949A (en) * | 2011-03-25 | 2013-12-11 | 出光兴产株式会社 | Organic electroluminescent device |
| JP2014132002A (en) * | 2012-09-03 | 2014-07-17 | Hodogaya Chem Co Ltd | Compound having indeno acridan ring structure, and organic electroluminescence element |
| CN103985822A (en) * | 2014-05-30 | 2014-08-13 | 广州华睿光电材料有限公司 | Organic mixture, composite containing organic mixture, organic electronic device and application |
-
2015
- 2015-04-11 CN CN201510190431.3A patent/CN104835916B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20120217869A1 (en) * | 2011-02-28 | 2012-08-30 | Kyushu University National University Corporation | Delayed fluorescence material and organic electroluminescence device |
| CN103443949A (en) * | 2011-03-25 | 2013-12-11 | 出光兴产株式会社 | Organic electroluminescent device |
| JP2014132002A (en) * | 2012-09-03 | 2014-07-17 | Hodogaya Chem Co Ltd | Compound having indeno acridan ring structure, and organic electroluminescence element |
| CN103985822A (en) * | 2014-05-30 | 2014-08-13 | 广州华睿光电材料有限公司 | Organic mixture, composite containing organic mixture, organic electronic device and application |
Non-Patent Citations (1)
| Title |
|---|
| HIROKI UOYAMA,ET,AL: "Highly efficient organic light-emitting diodes from delayed fluorescence", 《NATURE》 * |
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