CN102931357B - Two emission layer hemispherical shell organic electroluminescence device and preparation method thereof - Google Patents
Two emission layer hemispherical shell organic electroluminescence device and preparation method thereof Download PDFInfo
- Publication number
- CN102931357B CN102931357B CN201110226142.6A CN201110226142A CN102931357B CN 102931357 B CN102931357 B CN 102931357B CN 201110226142 A CN201110226142 A CN 201110226142A CN 102931357 B CN102931357 B CN 102931357B
- Authority
- CN
- China
- Prior art keywords
- layer
- hemispherical shell
- organic electroluminescence
- electroluminescence device
- emission layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Landscapes
- Electroluminescent Light Sources (AREA)
Abstract
The invention belongs to field of photoelectric devices, it discloses a kind of two emission layer hemispherical shell organic electroluminescence device and preparation method thereof; This pair of emission layer hemispherical shell organic electroluminescence device comprises hemispherical shell substrate, at the inner surface of described hemispherical shell substrate sequentially laminated with anode layer, p-type doping hole transmission layer, electronic barrier layer, blue light-emitting, green light emitting layer, hole blocking layer, N-shaped doping electron transfer layer and cathode layer.Provided by the invention pair of emission layer hemispherical shell organic electroluminescence device, adopt two-layer luminescent layer, and two-layer luminescent layer all adopts host-guest system structure, and material of main part is bipolar host material or the composite material for hole transport ability and electron-transporting material of main part, so just can widen the collision recombination region of exciton, thus minimizing triplet state-triplet state annihilation, reduce the starting resistor of organic electroluminescence device.
Description
Technical field
The present invention relates to field of photoelectric devices, particularly relate to a kind of two emission layer hemispherical shell organic electroluminescence device and preparation method thereof.
Background technology
1987, Tang and VanSlyke of EastmanKodak company of the U.S. reported the breakthrough in organic electroluminescent research.They utilize vacuum evaporation technology higher to the aromatic diamine and fluorescence efficiency with hole transport ability and have the oxine aluminium (Alq of electron-transporting first
3) combine and prepared double-deck organic electroluminescence device.Device is under 10V driving voltage, and transmitting green light, brightness is up to 1000cd/m
2, efficiency reaches 1.5lm/W, and the life-span was more than 1000 hours.This landmark work makes people see the practical and business-like rosy prospect of organic electroluminescent.
Since people's reported first such as J.Kido in 1994 since white color organic electroluminescence device (WOLEDs), the research of this respect causes the broad interest of people.Nineteen ninety-five, they report multi-luminescent layer structure and obtain white light on science.Have employed two or three independently luminescent layer launch the light of different colours, the light of these different colours is along synthesize white light when a direction outgoing.Have now been developed various device architecture to obtain efficient and that color rendering is stable white light parts.But compared to semiconductor light-emitting-diode LEDs, the luminous efficiency of present white light OLED is still lower, and need to improve further.Therefore, the general phosphorescent emitter that adopts is doped to make full use of singlet and triplet emission in fluorescent host material, thus improves device light emitting efficiency.Due to the carrier lifetime that triplet excitons is shorter, when high driving voltage, because the concentration of charge carrier is higher, easily cause triplet state-triplet state annihilation.Therefore, when increasing the driving voltage of phosphorescent OLED device, there will be a maximum, then just sharply decline, this just hinders phosphorescent OLED device application in practice.
Summary of the invention
The object of the present invention is to provide a kind of two emission layer hemispherical shell organic electroluminescence device that can reduce driving voltage.
A kind of two emission layer hemispherical shell organic electroluminescence device, comprise hemispherical shell substrate, at the inner surface of described hemispherical shell substrate sequentially laminated with anode layer, p-type doping hole transmission layer, electronic barrier layer, blue light-emitting, green light emitting layer, hole blocking layer, N-shaped doping electron transfer layer and cathode layer.
Above-mentioned pair of emission layer hemispherical shell organic electroluminescence device, the internal diameter of described hemispherical shell substrate is 3 ~ 10mm, and the radius-thickness ratio between the thickness of described hemispherical shell substrate and internal diameter is 0.1 ~ 1.0.
Above-mentioned pair of emission layer hemispherical shell organic electroluminescence device, the material of its functional layer is as follows:
The material of described anode layer is conventional electric conducting material, e.g., and tin indium oxide, fluorine doped tin oxide, Al-Doped ZnO or mix indium zinc oxide;
The material of described p-type doping hole transmission layer is hole mobile material doping tetrafluoro 1,4-benzoquinone bismethane, four cyano 1,4-benzoquinone bismethane or molybdenum trioxide;
Described hole mobile material is 4,4 ', 4 "-three (3-aminomethyl phenyl aniline) triphenylamine, N, N '-two (3-aminomethyl phenyl)-N, N '-diphenyl-4; 4 '-benzidine, 4; 4 ', 4 "-three (carbazole-9-base) triphenylamine or N, N '-(1-naphthyl)-N, N '-diphenyl-4,4 '-benzidine;
The material of described electronic barrier layer is 1,1-bis-[4-[N, N '-two (p-tolyl) is amino] phenyl] cyclohexane, N, N '-two (3-aminomethyl phenyl)-N, N '-diphenyl-4,4 '-benzidine or 4,4 ', 4 "-three (carbazole-9-base) triphenylamine;
The material of described luminescent layer is 4,4 ', 4 "-three (carbazole-9-base) triphenylamine, 1,2,4-triazole derivative or N-aryl benzimidazole doped luminescent material;
The material of described blue light-emitting is material of main part, red emitting material and blue light emitting material; Wherein, described blue light emitting material two (4,6-difluorophenyl pyridinato-N, C
2) pyridinecarboxylic closes iridium or two (4,6-difluorophenyl pyridinato)-four (1-pyrazolyl) boric acid closes iridium;
The material of described green light emitting layer is material of main part, red emitting material and green light luminescent material; Wherein, described green light luminescent material is described green light luminescent material is that three (2-phenylpyridines) close iridium or acetylacetone,2,4-pentanedione two (2-phenylpyridine) closes iridium;
In above-mentioned blue light-emitting and green light emitting layer:
Described material of main part is 2,8-bis-(hexichol phosphorus oxygen base) benzothiophene, 4,4 ', 4 " the doping composite material of-three (carbazole-9-base) triphenylamines and N-aryl benzimidazole, phenyl beautiful jade and 2-(4-xenyl)-5-(the 4-tert-butyl group) phenyl-1; the doping composite material of 3,4-oxadiazole or 4,4 '-two (9-carbazole) biphenyl and 4; the doping composite material of 7-diphenyl-1,10-phenanthroline; Described red emitting material is that two (2-methyl-diphenylquinoxaline) (acetylacetone,2,4-pentanediones) close iridium, two (1-phenyl isoquinolin quinoline) (acetylacetone,2,4-pentanediones) close iridium or three (1-phenyl-isoquinolin) close iridium;
The material of described hole blocking layer is 2-(4-xenyl)-5-(the 4-tert-butyl group) phenyl-1,3,4-oxadiazole, oxine aluminium, 2,5-bis-(1-naphthyl)-1,3,4-diazole, 4,7-diphenyl-1,10-phenanthroline or N-aryl benzimidazole;
The material of described N-shaped doping electron transfer layer is electron transport material doping cesium carbonate, cesium azide, cesium fluoride, lithium fluoride or lithium carbonate;
Described electron transport material is 2-(4-xenyl)-5-(the 4-tert-butyl group) phenyl-1,3,4-oxadiazole, oxine aluminium, 2,5-bis-(1-naphthyl)-1,3,4-diazole, 4,7-diphenyl-1,10-phenanthroline or N-aryl benzimidazole;
The material of described cathode layer is common metal, e.g., and silver, aluminium, platinum, gold or magnesium silver alloy.
Another object of the present invention is to the preparation method that above-mentioned pair of emission layer hemispherical shell organic electroluminescence device is provided, comprise the steps:
S1, cleaning, dry hemispherical shell substrate;
S2, employing magnetron sputtering technique, at the inner surface sputter anode layer of described hemispherical shell substrate;
S3, at described anode layer surface successively evaporation p-type doping hole transmission layer, electronic barrier layer, blue light-emitting, green light emitting layer, hole blocking layer, N-shaped doping electron transfer layer and cathode layer;
After above-mentioned technique completes, obtained described pair of emission layer hemispherical shell organic electroluminescence device.
Provided by the invention pair of emission layer hemispherical shell organic electroluminescence device, adopt two-layer luminescent layer, and two-layer luminescent layer all adopts host-guest system structure, and material of main part is bipolar host material or the composite material for hole transport ability and electron-transporting material of main part, so just can widen the collision recombination region of exciton, thus minimizing triplet state-triplet state annihilation, reduce the starting resistor of organic electroluminescence device.
Accompanying drawing explanation
Fig. 1 is the structural representation of of the present invention pair of emission layer hemispherical shell organic electroluminescence device;
Fig. 2 is preparation technology's flow chart of of the present invention pair of emission layer hemispherical shell organic electroluminescence device;
Fig. 3 is the brightness-voltage curve comparison diagram of the organic electroluminescence device of embodiment 1 and comparative example;
Fig. 4 is the luminous efficiency-current density plot figure of the organic electroluminescence device of embodiment 1 and comparative example.
Embodiment
The two emission layer hemispherical shell organic electroluminescence device of one provided by the invention, as shown in Figure 1, comprise hemispherical shell substrate 101, at the inner surface of described hemispherical shell substrate sequentially laminated with anode layer 102, p-type doping hole transmission layer 103, electronic barrier layer 104, blue light-emitting 105, green light emitting layer 106, hole blocking layer 107, N-shaped doping electron transfer layer 108 and cathode layer 109;
In above-mentioned pair of emission layer hemispherical shell organic electroluminescence device, the internal diameter of hemispherical shell substrate (e.g., glass) is 3 ~ 10mm, and the pass between the thickness of hemispherical shell substrate and internal diameter is: radius-thickness ratio
be 0.1 ~ 1.0; Thickness is regulated according to corresponding internal diameter.
Above-mentioned pair of emission layer hemispherical shell organic electroluminescence device, the material of its functional layer is as follows:
The material of described anode layer is conventional electric conducting material, e.g., and tin indium oxide (ITO), fluorine doped tin oxide (FTO), Al-Doped ZnO (AZO) or mix indium zinc oxide (IZO); The preferred ITO of material of anode layer; The thickness of anode layer is 100 ~ 200nm, and thickness is preferably 150nm;
The material of described p-type doping hole transmission layer be hole mobile material (as, 4, 4 ', 4 "-three (3-aminomethyl phenyl aniline) triphenylamine (m-MTDATA), N, N '-two (3-aminomethyl phenyl)-N, N '-diphenyl-4, 4 '-benzidine (TPD), 4, 4 ', 4 "-three (carbazole-9-base) triphenylamine (TCTA), N, N '-(1-naphthyl)-N, N '-diphenyl-4, 4 '-benzidine (NPB)) doping tetrafluoro 1,4-benzoquinone bismethane (F4-TCNQ), four cyano 1,4-benzoquinone bismethane (TCNQ) or molybdenum trioxide (MoO
3), the material of p-type doping hole transmission layer is preferably m-MTDATA:F4-TCNQ, and the thickness of p-type doping hole transmission layer is 20 ~ 80nm, and thickness is preferably 40nm, in the material of described p-type doping hole transmission layer, dopant material, i.e. tetrafluoro 1,4-benzoquinone bismethane (F4-TCNQ), four cyano 1,4-benzoquinone bismethane (TCNQ) or molybdenum trioxide (MoO
3) doping mass percent be 0.4% ~ 4%,
The material of described electronic barrier layer is 1,1-bis-[4-[N, N '-two (p-tolyl) is amino] phenyl] cyclohexane (TAPC), N, N '-two (3-aminomethyl phenyl)-N, N '-diphenyl-4,4 '-benzidine (TPD) or 4,4 ', 4 "-three (carbazole-9-base) triphenylamine (TCTA); The material of electronic barrier layer is preferably TAPC; The thickness of electronic barrier layer is 2 ~ 20nm, and thickness is preferably 5nm;
The material of described blue light-emitting is material of main part, red emitting material and blue light emitting material, and the material of described green light emitting layer is material of main part, red emitting material and green light luminescent material; Wherein:
Described material of main part is 2, 8-bis-(hexichol phosphorus oxygen base) benzothiophene (PPT), 4, 4 ', 4 " doping composite material (the i.e. TCTA:TPBi of-three (carbazole-9-base) triphenylamine (TCTA) and N-aryl benzimidazole (TPBi), the mol ratio of TCTA and TPBi is 1: 1), phenyl beautiful jade (NPB) and 2-(4-xenyl)-5-(the 4-tert-butyl group) phenyl-1, 3, doping composite material (the i.e. NPB:PBD of 4-oxadiazole (PBD), the mol ratio of NPB and PBD is 1: 1), 4, 4 '-two (9-carbazole) biphenyl (CBP) and 4, 7-diphenyl-1, doping composite material (the i.e. CBP:Bphen of 10-phenanthroline (Bphen), the mol ratio of CBP and Bphen is 1: 1),
Described blue light emitting material is two (4,6-difluorophenyl pyridinato-N, C
2) pyridinecarboxylic closes iridium (FIrpic) or two (4,6-difluorophenyl pyridinato)-four (1-pyrazolyl) boric acid closes iridium (FIr6);
Described green light luminescent material is that three (2-phenylpyridines) close iridium (Ir (ppy)
3) or acetylacetone,2,4-pentanedione two (2-phenylpyridine) close iridium (Ir (ppy)
2(acac));
Described red emitting material is that two (2-methyl-diphenylquinoxaline) (acetylacetone,2,4-pentanediones) close iridium (Ir (MDQ)
2(acac)), two (1-phenyl isoquinolin quinoline) (acetylacetone,2,4-pentanediones) close iridium (Ir (piq)
2(acac)) or three (1-phenyl-isoquinolin) close iridium (Ir (piq)
3);
In described blue light-emitting, blue light emitting material is guest materials, and red emitting material is dopant material; And in described blue light-emitting, the mass percent of guest materials is 5 ~ 15wt%, the mass percent of dopant material is 0.1 ~ 1wt%; The thickness of this blue light-emitting is 8 ~ 20nm;
In described green light emitting layer, green light luminescent material is guest materials, and red emitting material is dopant material; And in described green light emitting layer, the mass percent of guest materials is 5 ~ 15wt%, the mass percent of dopant material is 0.1 ~ 1wt%; The thickness of this green light emitting layer is 8 ~ 20nm;
The material of described hole blocking layer is 2-(4-xenyl)-5-(the 4-tert-butyl group) phenyl-1,3,4-oxadiazole (PBD), oxine aluminium (Alq
3), 2,5-bis-(1-naphthyl)-1,3,4-diazole (BND), 4,7-diphenyl-1,10-phenanthrolines (Bphen) or N-aryl benzimidazole (TPBi); The material of hole blocking layer is preferably Bphen; Hole barrier layer thickness is 2 ~ 20nm, and thickness is preferably 10nm;
The material of described N-shaped doping electron transfer layer is electron transport material (e.g., 2-(4-xenyl)-5-(the 4-tert-butyl group) phenyl-1,3,4-oxadiazole (PBD), oxine aluminium (Alq
3), 2,5-bis-(1-naphthyl)-1,3,4-diazole (BND), 4,7-diphenyl-1,10-phenanthrolines (Bphen) or N-aryl benzimidazole (TPBi)) doping cesium carbonate (Cs
2cO
3), cesium azide (CsN
3), cesium fluoride (CsF), lithium fluoride (LiF) or lithium carbonate (Li
2cO
3); The material of N-shaped doping electron transfer layer is preferably Bphen:Cs
2cO
3; N-shaped doping electric transmission layer thickness is 40 ~ 80nm, and thickness is preferably 40nm; In the material of described N-shaped doping electron transfer layer, dopant material, i.e. cesium carbonate (Cs
2cO
3), cesium azide (CsN
3), cesium fluoride (CsF), lithium fluoride (LiF) or lithium carbonate (Li
2cO
3) doping mass percent be 10% ~ 30%.
The material of described cathode layer is common metal, e.g., silver (Ag), aluminium (Al), platinum (Pt), gold (Au) or magnesium silver alloy (Mg:Ag), wherein, the mass ratio of Mg and Ag is 10: 1; The material of cathode layer is preferably Mg: the Ag alloy that mass ratio is 10: 1; The thickness of cathode layer is 100 ~ 200nm, and thickness is preferably 150nm.
The preparation method of above-mentioned pair of emission layer hemispherical shell organic electroluminescence device, as shown in Figure 2, comprises the steps:
S1, by hemisphere substrate (e.g., glass), use each ultrasonic cleaning 15min such as pure water, acetone, ethanol successively, clean up post-drying;
S2, employing magnetron sputtering technique, put into the vacuum cavity of magnetron sputtering apparatus, at the inner surface sputter anode layer of hemispherical shell substrate by described hemispherical shell substrate; Obtained hemispherical shell anode substrate, employing power is the oxygen plasma treatment anode layer 15min of 10W subsequently;
S3, hemispherical shell anode substrate is put into the organic vacuum cavity of evaporated device, at described anode layer surface successively evaporation p-type doping hole transmission layer, luminescent layer, hole blocking layer, N-shaped doping electron transfer layer; Subsequently, substrate moves in the vacuum metal cavity of evaporated device, at described N-shaped doping electron transfer layer surface evaporation one deck cathode layer;
After above-mentioned technique completes, obtained described pair of emission layer hemispherical shell organic electroluminescence device.
In above-mentioned preparation method, also can obtain containing the substrate of anode layer by procurement method, e.g., indium oxide tin glass, fluorine doped tin oxide glass, mix aluminium zinc oxide glass or mix indium zinc oxide glass.
Provided by the invention pair of emission layer hemispherical shell organic electroluminescence device, adopt two-layer luminescent layer, and two-layer luminescent layer all adopts host-guest system structure, and material of main part is bipolar host material or the composite material for hole transport ability and electron-transporting material of main part, so just can widen the collision recombination region of exciton, thus minimizing triplet state-triplet state annihilation, reduce the starting resistor of organic electroluminescence device.
Below in conjunction with accompanying drawing, preferred embodiment of the present invention is described in further detail.
Embodiment 1
The structure of two emission layer hemispherical shell organic electroluminescence device of the present embodiment is: glass/ITO/m-MTDATA:F4-TCNQ/TAPC/ (TCTA:TPBi): Firpic:Ir (MDQ)
2(acac)/(TCTA:TPBi): Ir (ppy)
3: Ir (MDQ)
2(acac)/Bphen/Bphen:Cs
2cO
3/ Mg:Ag.
The preparation process of two emission layer hemispherical shell organic electroluminescence device of the present embodiment is as follows:
1, be 5mm by internal diameter, thickness is the hemisphere substrate of glass of 2mm, uses each ultrasonic cleaning 15min such as pure water, acetone, ethanol successively, clean up post-drying;
2, hemisphere substrate of glass is put into the organic vacuum cavity of magnetron sputtering apparatus, the ito anode layer that sputter one deck 150nm is thick; Then the spin-on-glass photoresist of ito anode layer, exposure, development, chloroazotic acid etching will be coated with, be etched into required pattern and size, then the electro-conductive glass cleaning will etched, use each 15min of each ultrasonic cleaning such as pure water, acetone, ethanol successively, clean up and rear oxygen plasma treatment is carried out to it, the oxygen plasma treatment time is 15min, and power is 10W, improves the surperficial work content of electro-conductive glass with this;
3, ITO hemisphere glass is put into the organic vacuum cavity of evaporated device, (material is m-MTDATA:F4-TCNQ to evaporation p-type doping hole transmission layer successively, thickness is 40nm, the mass percent of dopant material is 0.4%), electronic barrier layer (material is TAPC, and thickness is 5nm), (material is (TCTA:TPBI): Firpic:Ir (MDQ) to blue light-emitting
2(acac); Wherein, material of main part to be mol ratio be 1: 1 TCTA: TPBI, guest materials mass percent is the Firpic of 10%, dopant material to be mass percent be 0.5% Ir (MDQ)
2(acac); The thickness of this blue light-emitting is 10nm), (material is (TCTA:TPBi): Ir (ppy) to green light emitting layer
3: Ir (MDQ)
2(acac); Wherein, material of main part to be mol ratio be 1: 1 TCTA: TPBi, guest materials mass percent is the Ir (ppy) of 10%
3, dopant material to be mass percent be 0.5% Ir (MDQ)
2(acac); The thickness of this green light emitting layer is 10nm, (material is Bphen:Cs to hole blocking layer (material is Bphen, and thickness is 10nm), N-shaped doping electron transfer layer
2cO
3; Thickness 40nm; The mass percent of dopant material is 10%);
4, substrate is moved into the vacuum metal cavity of evaporated device, continue on N-shaped doping electron transfer layer surface evaporation cathode layer (material to be mass ratio be 10: 1 magnesium silver alloy, namely Mg: Ag; Thickness 150nm);
After above-mentioned technique completes, the organic electroluminescence device of obtained described hemispherical shell.
Embodiment 2
The structure of two emission layer hemispherical shell organic electroluminescence device of the present embodiment is:
Glass/FTO/TPD:TCNQ/TPD/ (TCTA:TPBi): FIr6:Ir (MDQ)
2(acac)/(TCTA:TPBi): Ir (ppy)
3: Ir (MDQ)
2(acac)/PBD/PBD:LiF/Ag.
The preparation process of two emission layer hemispherical shell organic electroluminescence device of the present embodiment is as follows:
1, be 5mm by internal diameter, thickness is the hemisphere substrate of glass of 4mm, uses each ultrasonic cleaning 15min such as pure water, acetone, ethanol successively, clean up post-drying;
2, hemisphere substrate of glass is put into the organic vacuum cavity of magnetron sputtering apparatus, the FTO anode layer that sputter one deck 180nm is thick; Then the spin-on-glass photoresist of FTO anode layer, exposure, development, chloroazotic acid etching will be coated with, be etched into required pattern and size, then the electro-conductive glass cleaning will etched, use each 15min of each ultrasonic cleaning such as pure water, acetone, ethanol successively, clean up and rear oxygen plasma treatment is carried out to it, the oxygen plasma treatment time is 15min, and power is 10W, improves the surperficial work content of electro-conductive glass with this;
3, FTO hemisphere glass is put into the organic vacuum cavity of evaporated device, (material is TPD:TCNQ to evaporation p-type doping hole transmission layer successively, thickness is 20nm, the mass percent of dopant material is 1%), electronic barrier layer (material is TPD, and thickness is 2nm), (material is (TCTA:TPBi): FIr6:Ir (MDQ) to blue light-emitting
2(acac); Wherein, material of main part to be mol ratio be 1: 1 TCTA:TPBi, guest materials mass percent is the FIr6 of 10%, dopant material to be mass percent be 1% Ir (MDQ)
2(acac), the thickness of this blue light-emitting is 8nm), (material is (TCTA:TPBi): Ir (ppy) to green light emitting layer
3: Ir (MDQ)
2(acac); Wherein, material of main part to be mol ratio be 1: 1 TCTA: TPBi, guest materials mass percent is the Ir (ppy) of 10%
3, dopant material to be mass percent be 1% Ir (MDQ)
2(acac), the thickness of this green light emitting layer is 8nm), hole blocking layer (material is PBD, and thickness is 2nm), N-shaped doping electron transfer layer (material is PBD:LiF, thickness 60nm; The mass percent of dopant material is 20%);
4, substrate is moved into the vacuum metal cavity of evaporated device, (material is Ag to continue evaporation cathode layer on N-shaped doping electron transfer layer surface; Thickness 100nm);
After above-mentioned technique completes, the organic electroluminescence device of obtained described hemispherical shell.
Embodiment 3
The structure of two emission layer hemispherical shell organic electroluminescence device of the present embodiment is:
Glass/AZO/TCTA:MoO
3/ TCTA/PPT:FIrpic:Ir (MDQ)
2(acac)/PPT:Ir (ppy)
2(acac): Ir (MDQ)
2(acac)/Alq
3/ Alq
3: CsN
3/ Al.
The preparation process of two emission layer hemispherical shell organic electroluminescence device of the present embodiment is as follows:
1, be 5mm by internal diameter, thickness is the hemisphere substrate of glass of 5mm, uses each ultrasonic cleaning 15min such as pure water, acetone, ethanol successively, clean up post-drying;
2, hemisphere substrate of glass is put into the organic vacuum cavity of magnetron sputtering apparatus, the AZO anode layer that sputter one deck 200nm is thick; Then the spin-on-glass photoresist of AZO anode layer, exposure, development, chloroazotic acid etching will be coated with, be etched into required pattern and size, then the electro-conductive glass cleaning will etched, use each 15min of each ultrasonic cleaning such as pure water, acetone, ethanol successively, clean up and rear oxygen plasma treatment is carried out to it, the oxygen plasma treatment time is 15min, and power is 10W, improves the surperficial work content of electro-conductive glass with this;
3, AZO hemisphere glass is put into the organic vacuum cavity of evaporated device, (material is TCTA:MoO to evaporation p-type doping hole transmission layer successively
3, thickness is 60nm, and the mass percent of dopant material is 2%), electronic barrier layer (material is TCTA, and thickness is 20nm), (material is PPT:FIrpic:Ir (MDQ) to blue light-emitting
2(acac); Wherein, material of main part is PPT, and guest materials mass percent is the Firpic of 15%, dopant material to be mass percent be 0.1% Ir (MDQ)
2(acac); The thickness of this blue light-emitting is 12nm), (material is PPT:Ir (ppy) to green light emitting layer
2(acac): Ir (MDQ)
2(acac); Wherein, material of main part is PPT, and guest materials mass percent is the Ir (ppy) of 5%
2(acac), dopant material to be mass percent be 0.1% Ir (MDQ)
2(acac); The thickness of this green light emitting layer is 12nm), (material is Alq to hole blocking layer
3, thickness is 20nm), N-shaped doping electron transfer layer (material is Alq
3: CsN
3, thickness 80nm; The mass percent of dopant material is 30%);
4, substrate is moved into the vacuum metal cavity of evaporated device, (material is Al to continue evaporation cathode layer on N-shaped doping electron transfer layer surface; Thickness 200nm);
After above-mentioned technique completes, the organic electroluminescence device of obtained described hemispherical shell.
Embodiment 4
The structure of two emission layer hemispherical shell organic electroluminescence device of the present embodiment is:
Glass/IZO/NPB:MoO
3/ TAPC/ (NPB:PBD): FIr6:Ir (piq)
2(acac)/(TCTA:TPBi): Ir (ppy)
2(acac): Ir (piq)
2(acac/BND/BND:CsF/Mg:Ag.
The preparation process of two emission layer hemispherical shell organic electroluminescence device of the present embodiment is as follows:
1, be 5mm by internal diameter, thickness is the hemisphere substrate of glass of 4mm, uses each ultrasonic cleaning 15min such as pure water, acetone, ethanol successively, clean up post-drying;
2, hemisphere substrate of glass is put into the organic vacuum cavity of magnetron sputtering apparatus, the IZO anode layer that sputter one deck 100nm is thick; Then the spin-on-glass photoresist of IZO anode layer, exposure, development, chloroazotic acid etching will be coated with, be etched into required pattern and size, then the electro-conductive glass cleaning will etched, use each 15min of each ultrasonic cleaning such as pure water, acetone, ethanol successively, clean up and rear oxygen plasma treatment is carried out to it, the oxygen plasma treatment time is 15min, and power is 10W, improves the surperficial work content of electro-conductive glass with this;
3, IZO hemisphere glass is put into the organic vacuum cavity of evaporated device, (material is NPB:MoO to evaporation p-type doping hole transmission layer successively
3, thickness is 80nm, and the mass percent of dopant material is 4%), electronic barrier layer (material is TAPC, and thickness is 10nm), (material is (NPB:PBD): FIr6:Ir (piq) to blue light-emitting
2(acac); Wherein, material of main part to be mol ratio be 1: 1 NPB: PBD, guest materials mass percent is the FIr6 of 5%, dopant material to be mass percent be 0.2% Ir (MDQ)
2(acac); The thickness of this blue light-emitting is 10nm), (material is (TCTA:TPBi): Ir (ppy) to green light emitting layer
2(acac): Ir (piq)
2(acac); Wherein, material of main part to be mol ratio be 1: 1 TCTA: TPBi, guest materials mass percent is the Ir (ppy) of 15%
2(acac), dopant material to be mass percent be 0.2% Ir (piq)
2(acac); The thickness of this green light emitting layer is 10nm), hole blocking layer (material is BND, and thickness is 10nm), N-shaped doping electron transfer layer (material is BND:CsF, thickness 100nm; The mass percent of dopant material is 25%);
4, substrate is moved into the vacuum metal cavity of evaporated device, continue on N-shaped doping electron transfer layer surface evaporation cathode layer (material to be mass ratio be 10: 1 magnesium silver alloy, namely Mg: Ag; Thickness 150nm);
After above-mentioned technique completes, the organic electroluminescence device of obtained described hemispherical shell.
Embodiment 5
The structure of two emission layer hemispherical shell organic electroluminescence device of the present embodiment is:
Glass/ITO/m-MTDATA:F4-TCNQ/TAPC/ (CBP:Bphen): FIr6:Ir (piq)
3/ (CBP:Bphen): Ir (ppy)
3: Ir (piq)
3/ TPBi/TPBi:Li
2cO
3/ Pt.
The preparation process of two emission layer hemispherical shell organic electroluminescence device of the present embodiment is as follows:
1, be 8mm by internal diameter, thickness is the hemisphere substrate of glass of 5mm, uses each ultrasonic cleaning 15min such as pure water, acetone, ethanol successively, clean up post-drying;
2, hemisphere substrate of glass is put into the organic vacuum cavity of magnetron sputtering apparatus, the ito anode layer that sputter one deck 150nm is thick; Then the spin-on-glass photoresist of ito anode layer, exposure, development, chloroazotic acid etching will be coated with, be etched into required pattern and size, then the electro-conductive glass cleaning will etched, use each 15min of each ultrasonic cleaning such as pure water, acetone, ethanol successively, clean up and rear oxygen plasma treatment is carried out to it, the oxygen plasma treatment time is 15min, and power is 10W, improves the surperficial work content of electro-conductive glass with this;
3, ITO hemisphere glass is put into the organic vacuum cavity of evaporated device, (material is m-MTDATA:F4-TCNQ to evaporation p-type doping hole transmission layer successively, thickness is 40nm, the mass percent of dopant material is 3%), electronic barrier layer (material is TAPC, and thickness is 5nm), (material is (CBP:Bphen): FIr6:Ir (piq) to blue light-emitting
3; Wherein, material of main part to be mol ratio be 1: 1 CBP: Bphen, guest materials mass percent is the FIr6 of 10%, dopant material to be mass percent be 0.5% Ir (piq)
3; The thickness of this blue light-emitting is 10nm), (material is (CBP:Bphen): Ir (ppy) to green light emitting layer
3: Ir (piq)
3; Wherein, material of main part to be mol ratio be 1: 1 CBP: Bphen, guest materials mass percent is the Ir (ppy) of 10%
3, dopant material to be mass percent be 0.5% Ir (piq)
3; The thickness of this green light emitting layer is 10nm), hole blocking layer (material is TPBi, and thickness is 12nm), N-shaped doping electron transfer layer (material is TPBi:Li
2cO
3, thickness 40nm; The mass percent of dopant material is 15%);
4, substrate is moved into the vacuum metal cavity of evaporated device, (material is Pt to continue evaporation cathode layer on N-shaped doping electron transfer layer surface; Thickness 100nm);
After above-mentioned technique completes, the organic electroluminescence device of obtained described hemispherical shell.
Embodiment 6
The structure of two emission layer hemispherical shell organic electroluminescence device of the present embodiment is: glass/ITO/m-MTDATA:F4-TCNQ/TAPC/ (TCTA:TPBi): Firpic:Ir (MDQ)
2(acac)/(TCTA:TPBi): Ir (ppy)
3: Ir (MDQ)
2(acac)/Bphen/Bphen:Cs
2cO
3/ Mg:Ag.
The preparation process of two emission layer hemispherical shell organic electroluminescence device of the present embodiment is as follows:
1, be 3mm by internal diameter, thickness is the hemisphere substrate of glass of 1mm, uses each ultrasonic cleaning 15min such as pure water, acetone, ethanol successively, clean up post-drying;
2, hemisphere substrate of glass is put into the organic vacuum cavity of magnetron sputtering apparatus, the ito anode layer that sputter one deck 150nm is thick; Then the spin-on-glass photoresist of ito anode layer, exposure, development, chloroazotic acid etching will be coated with, be etched into required pattern and size, then the electro-conductive glass cleaning will etched, use each 15min of each ultrasonic cleaning such as pure water, acetone, ethanol successively, clean up and rear oxygen plasma treatment is carried out to it, the oxygen plasma treatment time is 15min, and power is 10W, improves the surperficial work content of electro-conductive glass with this;
3, ITO hemisphere glass is put into the organic vacuum cavity of evaporated device, (material is m-MTDATA:F4-TCNQ to evaporation p-type doping hole transmission layer successively, thickness is 40nm, the mass percent of dopant material is 4%), electronic barrier layer (material is TAPC, and thickness is 5nm), (material is (TCTA:TPBi): Firpic:Ir (MDQ) to blue light-emitting
2(acac); Wherein, material of main part to be mol ratio be 1: 1 TCTA: TPBi, guest materials mass percent is the Firpic of 15%, dopant material to be mass percent be 0.6% Ir (MDQ)
2(acac); The thickness of this blue light-emitting is 20nm), (material is (TCTA:TPBi): Ir (ppy) to green light emitting layer
3: Ir (MDQ)
2(acac); Wherein, material of main part to be mol ratio be 1: 1 TCTA: TPBi, guest materials mass percent is the Ir (ppy) of 15%
3, dopant material to be mass percent be 0.6% Ir (MDQ)
2(acac); The thickness of this green light emitting layer is 20nm); Thickness is 40nm), hole blocking layer (material is Bphen, and thickness is 10nm), N-shaped doping electron transfer layer (material is Bphen:Cs
2cO
3, thickness 40nm; The mass percent of dopant material is 30%);
4, substrate is moved into the vacuum metal cavity of evaporated device, continue on N-shaped doping electron transfer layer surface evaporation cathode layer (material to be mass ratio be 10: 1 magnesium silver alloy, namely Mg: Ag; Thickness 150nm);
After above-mentioned technique completes, the organic electroluminescence device of obtained described hemispherical shell.
Comparative example
The structure of the organic electroluminescence device of this comparative example is: glass/ITO/m-MTDATA:F4-TCNQ/TAPC/TCTA:Firpic:Ir (MDQ)
2(acac)/TPBi/TPBi:Ir (ppy)
3: Ir (MDQ)
2(acac)/Bphen/Bphen:Cs
2cO
3/ Mg:Ag.
The preparation process of the organic electroluminescence device of this comparative example is as follows:
1, by flat glass substrate thick for 1mm as a comparison
use each ultrasonic cleaning 15min such as pure water, acetone, ethanol successively, clean up post-drying;
2, flat glass substrate is put into the organic vacuum cavity of magnetron sputtering apparatus, the ito anode layer that sputter one deck 150nm is thick; Then the spin-on-glass photoresist of ito anode layer, exposure, development, chloroazotic acid etching will be coated with, be etched into required pattern and size, then the electro-conductive glass cleaning will etched, use each 15min of each ultrasonic cleaning such as pure water, acetone, ethanol successively, clean up and rear oxygen plasma treatment is carried out to it, the oxygen plasma treatment time is 15min, and power is 10W, improves the surperficial work content of electro-conductive glass with this;
3, ito glass is put into the organic vacuum cavity of evaporated device, (material is m-MTDATA:F4-TCNQ to evaporation p-type doping hole transmission layer successively, thickness is 40nm, the mass percent of dopant material is 0.4%), electronic barrier layer (material is TAPC, and thickness is 5nm), (material is TCTA:Firpic:Ir (MDQ) to blue light-emitting
2(acac); Wherein, material of main part is TCTA, and guest materials mass percent is the Firpic of 10%, dopant material to be mass percent be 0.5% Ir (MDQ)
2(acac); The thickness of this blue light-emitting is 10nm), wall (material is TPBi, and thickness is 5nm), (material is TPBi:Ir (ppy) to green light emitting layer
3: Ir (MDQ)
2(acac); Wherein, material of main part is TPBi, and guest materials mass percent is the Ir (ppy) of 10%
3, dopant material to be mass percent be 0.5% Ir (MDQ)
2(acac); The thickness of this green light emitting layer is 10nm), hole blocking layer (material is Bphen, and thickness is 10nm), N-shaped doping electron transfer layer (material is Bphen:Cs
2cO
3, thickness 40nm; The mass percent of dopant material is 10%);
4, substrate is moved into the vacuum metal cavity of evaporated device, continue on N-shaped doping electron transfer layer surface evaporation cathode layer (material to be mass ratio be 10: 1 magnesium silver alloy, namely Mg: Ag; Thickness 150nm);
After above-mentioned technique completes, the organic electroluminescence device of obtained described hemispherical shell.
Fig. 3 is the brightness-voltage curve comparison diagram of the organic electroluminescence device of embodiment 1 and comparative example.
Fig. 4 is the luminous efficiency-current density plot figure of the organic electroluminescence device of embodiment 1 and comparative example.
Preparation used by the present invention and tester are: high vacuum thermal resistance evaporation coating system (scientific instrument development center, Shenyang Co., Ltd, pressure < 10
-4pa), current-voltage tester (Keithly company of the U.S., 2602), electroluminescent spectrum tester (photoresearch company of the U.S. model:, model: PR650) and screen intensity meter (Beijing Normal University, model: ST-86LA).
As can be seen from Figure 3, during identical voltage, the organic electroluminescence device of embodiment 1 is higher than the brightness of the organic electroluminescence device of comparative example, and the organic electroluminescence device starting resistor of embodiment 1 will lower than comparative example.
Can read a book from Fig. 4, under same current density, the luminous efficiency of the organic electroluminescence device that embodiment 1 is obtained is greater than comparative example; And the decay of the organic electroluminescence device efficiency of embodiment 1 is also slower than comparative example;
Therefore, when organic electroluminescence device adopts the double emitting layers structure of host-guest system, guest materials Direct Acquisition charge carrier in luminescent layer as the collision complex centre of charge carrier, expand recombination region, reduce device starting resistor, and improve the luminous efficiency of organic electroluminescence device.
Should be understood that, the above-mentioned statement for present pre-ferred embodiments is comparatively detailed, and therefore can not think the restriction to scope of patent protection of the present invention, scope of patent protection of the present invention should be as the criterion with claims.
Claims (9)
1. a two emission layer hemispherical shell organic electroluminescence device, it is characterized in that, comprise hemispherical shell substrate, at the inner surface of described hemispherical shell substrate sequentially laminated with anode layer, p-type doping hole transmission layer, electronic barrier layer, blue light-emitting, green light emitting layer, hole blocking layer, N-shaped doping electron transfer layer and cathode layer, the material of described hemispherical shell substrate is glass, the internal diameter of described hemispherical shell substrate is 3 ~ 10mm, and the radius-thickness ratio between the thickness of described hemispherical shell substrate and internal diameter is 0.1 ~ 1.0.
2. according to claim 1 pair of emission layer hemispherical shell organic electroluminescence device, it is characterized in that, the material of described p-type doping hole transmission layer is hole mobile material doping tetrafluoro 1,4-benzoquinone bismethane, four cyano 1,4-benzoquinone bismethane or molybdenum trioxide; Wherein, described hole mobile material is 4,4 ', 4 "-three (3-aminomethyl phenyl aniline) triphenylamine, N; N '-two (3-aminomethyl phenyl)-N; N '-diphenyl-4,4 '-benzidine, 4,4'; 4 "-three (carbazole-9-base) triphenylamine or N, N '-(1-naphthyl)-N, N '-diphenyl-4,4 '-benzidine.
3. according to claim 1 pair of emission layer hemispherical shell organic electroluminescence device, it is characterized in that, the material of described electronic barrier layer is 1,1-bis-[4-[N, N '-two (p-tolyl) are amino] phenyl] cyclohexane, N, N '-two (3-aminomethyl phenyl)-N, N '-diphenyl-4,4 '-benzidine or 4,4', 4 "-three (carbazole-9-base) triphenylamines.
4. according to claim 1 pair of emission layer hemispherical shell organic electroluminescence device, is characterized in that, the material of described blue light-emitting is material of main part, red emitting material and blue light emitting material; Wherein, described blue light emitting material two (4,6-difluorophenyl pyridinato-N, C
2) pyridinecarboxylic closes iridium or two (4,6-difluorophenyl pyridinato)-four (1-pyrazolyl) boric acid closes iridium.
5. according to claim 1 pair of emission layer hemispherical shell organic electroluminescence device, is characterized in that, the material of described green light emitting layer is material of main part, red emitting material and green light luminescent material; Wherein, described green light luminescent material is described green light luminescent material is that three (2-phenylpyridines) close iridium or acetylacetone,2,4-pentanedione two (2-phenylpyridine) closes iridium.
6. the two emission layer hemispherical shell organic electroluminescence device according to claim 3 or 4, it is characterized in that, described material of main part is 2,8-bis-(hexichol phosphorus oxygen base) benzothiophene, 4,4', 4 " the doping composite material of-three (carbazole-9-base) triphenylamines and N-aryl benzimidazole, phenyl beautiful jade and 2-(4-xenyl)-5-(the 4-tert-butyl group) phenyl-1; 3; the doping composite material of 4-oxadiazole or 4; 4'-bis-(9-carbazole) biphenyl and 4; the doping composite material of 7-diphenyl-1,10-phenanthroline; Described red emitting material is that two (2-methyl-diphenylquinoxaline) (acetylacetone,2,4-pentanediones) close iridium, two (1-phenyl isoquinolin quinoline) (acetylacetone,2,4-pentanediones) close iridium or three (1-phenyl-isoquinolin) close iridium.
7. according to claim 1 pair of emission layer hemispherical shell organic electroluminescence device, it is characterized in that, the material of described hole blocking layer is 2-(4-xenyl)-5-(the 4-tert-butyl group) phenyl-1,3,4-oxadiazole, oxine aluminium, 2,5-bis-(1-naphthyls)-1,3,4-diazole, 4,7-diphenyl-1,10-phenanthrolines or N-aryl benzimidazole.
8. according to claim 1 pair of emission layer hemispherical shell organic electroluminescence device, is characterized in that, the material of described N-shaped doping electron transfer layer is electron transport material doping cesium carbonate, cesium azide, cesium fluoride, lithium fluoride or lithium carbonate; Described electron transport material is 2-(4-xenyl)-5-(the 4-tert-butyl group) phenyl-1,3,4-oxadiazole, oxine aluminium, 2,5-bis-(1-naphthyl)-1,3,4-diazole, 4,7-diphenyl-1,10-phenanthroline or N-aryl benzimidazole.
9. a preparation method for two emission layer hemispherical shell organic electroluminescence device, is characterized in that, comprise the steps:
S1, cleaning, dry hemispherical shell substrate, the material of described hemispherical shell substrate of glass is glass, and the internal diameter of described hemispherical shell substrate is 3 ~ 10mm, and the radius-thickness ratio between the thickness of described hemispherical shell substrate and internal diameter is 0.1 ~ 1.0;
S2, employing magnetron sputtering technique, at the inner surface sputter anode layer of described hemispherical shell substrate;
S3, at described anode layer surface successively evaporation p-type doping hole transmission layer, electronic barrier layer, blue light-emitting, green light emitting layer, hole blocking layer, N-shaped doping electron transfer layer and cathode layer;
After above-mentioned technique completes, obtained described pair of emission layer hemispherical shell organic electroluminescence device.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110226142.6A CN102931357B (en) | 2011-08-08 | 2011-08-08 | Two emission layer hemispherical shell organic electroluminescence device and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110226142.6A CN102931357B (en) | 2011-08-08 | 2011-08-08 | Two emission layer hemispherical shell organic electroluminescence device and preparation method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN102931357A CN102931357A (en) | 2013-02-13 |
| CN102931357B true CN102931357B (en) | 2016-04-13 |
Family
ID=47646112
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201110226142.6A Active CN102931357B (en) | 2011-08-08 | 2011-08-08 | Two emission layer hemispherical shell organic electroluminescence device and preparation method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN102931357B (en) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104051651A (en) * | 2013-03-15 | 2014-09-17 | 海洋王照明科技股份有限公司 | Organic electroluminescent device and preparation method thereof |
| CN104250370A (en) * | 2013-06-26 | 2014-12-31 | 海洋王照明科技股份有限公司 | Copolymer green light body material, preparation method thereof and organic electroluminescent device |
| CN106549109A (en) * | 2016-10-25 | 2017-03-29 | Tcl集团股份有限公司 | A kind of QLED devices based on p i n structures and preparation method thereof |
| US11575087B1 (en) | 2020-12-25 | 2023-02-07 | Idemitsu Kosan Co., Ltd. | Organic electroluminescence device, light emitting device, organic electroluminescence display device and electronic device |
| WO2022138948A1 (en) * | 2020-12-25 | 2022-06-30 | 出光興産株式会社 | Organic electroluminescent element, light emitting device, organic electroluminescent display device, and electronic device |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1438829A (en) * | 2003-02-13 | 2003-08-27 | 光磊科技股份有限公司 | Organic electric-exciting light emitting device and its making method |
| CN2676417Y (en) * | 2003-12-11 | 2005-02-02 | 彭冠璋 | Illuminator |
| CN102027615A (en) * | 2008-03-26 | 2011-04-20 | 皇家飞利浦电子股份有限公司 | Light emitting diode device |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4474884B2 (en) * | 2003-09-29 | 2010-06-09 | セイコーエプソン株式会社 | Organic EL device |
-
2011
- 2011-08-08 CN CN201110226142.6A patent/CN102931357B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1438829A (en) * | 2003-02-13 | 2003-08-27 | 光磊科技股份有限公司 | Organic electric-exciting light emitting device and its making method |
| CN2676417Y (en) * | 2003-12-11 | 2005-02-02 | 彭冠璋 | Illuminator |
| CN102027615A (en) * | 2008-03-26 | 2011-04-20 | 皇家飞利浦电子股份有限公司 | Light emitting diode device |
Also Published As
| Publication number | Publication date |
|---|---|
| CN102931357A (en) | 2013-02-13 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN100484353C (en) | Organic electroluminescent part | |
| CN102694131B (en) | Organic light-emitting device, manufacturing method thereof and display device | |
| CN102136550B (en) | White light organic electroluminescent device and preparation method thereof | |
| CN102651454B (en) | Electroluminescent device, display device and preparation method of electroluminescent device | |
| CN101635334A (en) | Red organic electroluminescence device and preparation method thereof | |
| CN101364636A (en) | Organic electroluminescent device | |
| CN102916132A (en) | White-light organic electroluminescence device and preparation method thereof | |
| CN103730589A (en) | Top emission organic light-emitting device and manufacturing method thereof | |
| CN101452997B (en) | Organic electroluminescent devices of laminated construction | |
| CN100470877C (en) | Organic electro phosphorescent device and its preparation method | |
| CN102891262A (en) | Lamination organic electroluminescent device and preparation method thereof | |
| CN102931357B (en) | Two emission layer hemispherical shell organic electroluminescence device and preparation method thereof | |
| CN104282839A (en) | Organic electroluminescent device, preparation method of organic electroluminescent device and display device | |
| CN102931358A (en) | Hemispherical shell organic electroluminescence device and preparation method thereof | |
| CN101114699A (en) | Novel electroluminescent device and method for producing the same | |
| CN106531897B (en) | A kind of organic electroluminescence device and preparation method thereof based on exciplex | |
| CN100452476C (en) | Organic electroluminescent device | |
| CN105374949A (en) | Organic light-emitting device and preparation method thereof | |
| CN113066935A (en) | White organic electroluminescent device with double-excited-base compound as main body | |
| CN1585580A (en) | Organic electro-white light device and producing method thereof | |
| CN103545445A (en) | Organic electroluminescence device and manufacturing method thereof | |
| CN102842682A (en) | Stacked organic electroluminescence device and manufacturing method thereof | |
| CN102810645A (en) | Transmissive organic electroluminescent device and preparation method thereof | |
| CN110165065B (en) | High-efficiency/color quality/color stability laminated white organic light-emitting diode | |
| CN102214797B (en) | WOLED (white organic light-emitting device) and manufacturing method thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant |