CN106549109A - A kind of QLED devices based on p i n structures and preparation method thereof - Google Patents

A kind of QLED devices based on p i n structures and preparation method thereof Download PDF

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Publication number
CN106549109A
CN106549109A CN201610939765.0A CN201610939765A CN106549109A CN 106549109 A CN106549109 A CN 106549109A CN 201610939765 A CN201610939765 A CN 201610939765A CN 106549109 A CN106549109 A CN 106549109A
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layer
devices based
qled devices
qled
type material
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钱磊
杨行
杨一行
曹蔚然
向超宇
陈崧
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TCL Corp
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TCL Corp
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Priority to CN201610939765.0A priority Critical patent/CN106549109A/en
Publication of CN106549109A publication Critical patent/CN106549109A/en
Priority to PCT/CN2017/098254 priority patent/WO2018076907A1/en
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/14—Carrier transporting layers
    • H10K50/15—Hole transporting layers
    • H10K50/155—Hole transporting layers comprising dopants
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/04—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
    • H01L33/06—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
    • H10K50/115—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers comprising active inorganic nanostructures, e.g. luminescent quantum dots
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/14—Carrier transporting layers
    • H10K50/16—Electron transporting layers
    • H10K50/165—Electron transporting layers comprising dopants

Abstract

The present invention discloses a kind of QLED devices based on p i n structures and preparation method thereof, including substrate, hearth electrode, hole transmission layer, electronic barrier layer, quantum dot light emitting layer, hole blocking layer, electron transfer layer and top electrode, wherein, one aspect of the present invention is by using p-type material as hole transmission layer and using n-type material as electron transfer layer, to reduce the driving voltage of QLED devices, so as to effectively reduce quenching of the Stark effect to quantum dot light emitting；On the other hand, the cross relaxation between quantum dot is reduced by intrinsic host material is introduced in quantum dot light emitting layer, enhanced rad recombination probability, injected electrons and hole can also effectively be captured to improve current efficiency simultaneously, so as to improving the luminous efficiency of device and increasing the service life and stability of device.

Description

A kind of QLED devices based on p-i-n structure and preparation method thereof
Technical field
The present invention relates to technology of quantum dots field, more particularly to a kind of QLED devices and its preparation based on p-i-n structure Method.
Background technology
For solid-state illumination and Display Technique, driving voltage how is reduced so as to the device for obtaining low-power consumption is always Research worker endeavours the difficult problem for solving.Prior art improves its electric conductivity typically by heavily doped transmission material, so as to The driving voltage of device is reduced effectively；The device of low driving voltage and low energy consumption is had been obtained in OLED using p-i-n technologies Part.The p-type of high conductance is heavily doped can effectively to strengthen electrical pumping with the heavily doped transport layer of N-shaped, reduce transport layer in device drive process The ohmic loss of middle generation.
For II races and VI races luminescent quantum dot, its luminous efficiency is high, high color purity, and glow color can with Particle size changes.When quantum dot size gradually increases, glow color starts slowly red shift from blue.And sending out based on quantum dot Optical diode with preparing using typography, the features such as flexible and frivolous, is also follow-on Display Technique.
But QLED technologies also have blue light efficiency at present low, the defect such as device stability difference, thus block the technology Further industrialization.For QLED devices, high driving voltage can not only cause significant Quantum Confined Stark effect, so as to Cause to be quenched luminous, on the other hand can also affect the stability of device；How further to reduce QLED driving voltage become under One step improves the main target of device performance.
Therefore, prior art has yet to be improved and developed.
The content of the invention
In view of above-mentioned the deficiencies in the prior art, it is an object of the invention to provide a kind of QLED devices based on p-i-n structure Part and preparation method thereof, it is intended to which solving existing quantum dot device needs high voltage drive, and high voltage can cause significant amount Sub- Stark effect, so as to cause, quantum dot device luminous efficiency is low, stability is poor, the problem that service life is short.
Technical scheme is as follows：
It is preferred that a kind of QLED devices based on p-i-n structure, including substrate, hearth electrode, hole transmission layer, electronic blocking Layer, quantum dot light emitting layer, hole blocking layer, electron transfer layer and top electrode, wherein, the hole transmission layer is p-type material, The electron transfer layer is n-type material, and the quantum dot light emitting layer includes quanta point material and host material.
It is preferred that the described QLED devices based on p-i-n structure, wherein, the p-type material is doping F4-TCNQ TFB, polyTPD or PVK, or the p-type material be copper doped, ferrum, aluminum and nickel in one or more molybdenum oxide, oxidation Nickel, tungsten oxide or vanadium oxide, the n-type material is Doped LiF, one or more NET5, Alq3 in CsF, CsCOs and NDN1 Or OXD-7, or the ZnO or TiO that the n-type material is one or more in adulterated al, lithium, lanthanum, indium, gadolinium and magnesium2。
It is preferred that the described QLED devices based on p-i-n structure, wherein, the material of the electronic barrier layer be PVK, TFB、polyTPB、NPB、TAPC、NiO、V2O5、MoO3Or WO3In one or more, the material of the hole blocking layer is NET5, Alq3, OXD-7, ZnO or TiO2In one or more.
It is preferred that the described QLED devices based on p-i-n structure, wherein, the host material is II-VI group quasiconductor At least one of material, inorganic nanometer oxide or polymeric material.
It is preferred that the described QLED devices based on p-i-n structure, wherein, the Group II-VI semiconductor material is ZnS Or ZnSe, the inorganic nanometer oxide is ZnO, TiO2、SiO2, or Al2O3, the polymeric material is PMMA, PVP or PS.
It is preferred that the described QLED devices based on p-i-n structure, wherein, the quanta point material include CdSe/ZnS, CdZnS/ZnS, CdxZn1-xSeyS1-y/ZnS, PbSe/PbS, PbSe/CdS, PbSe/ZnS, MAPbX3, CsPbX3 or Cu- In-S。
It is preferred that the described QLED devices based on p-i-n structure, wherein, the hole transmission layer and electron transfer layer Thickness be 5-100nm.
It is preferred that the described QLED devices based on p-i-n structure, wherein, the doping content of the p-type material is 5wt- 20wt%。
It is preferred that the described QLED devices based on p-i-n structure, wherein, the doping content of the n-type material is 2wt- 10wt%。
It is preferred that the described QLED devices based on p-i-n structure, wherein, the QLED devices are eurymeric QLED device Or transoid QLED device.
Beneficial effect：The present invention provides a kind of QLED devices based on p-i-n structure, on the one hand by being made with p-type material For hole transmission layer and using n-type material as electron transfer layer, the driving voltage of QLED devices is reduced, so as to effectively reduce Quenching of the Stark effect to quantum dot light emitting；On the other hand, by host material is introduced in quantum dot light emitting layer reducing Cross relaxation between quantum dot, enhanced rad recombination probability, while effectively can also capture injected electrons and hole to carry High current efficiency, so as to improving the luminous efficiency of device and increasing the service life and stability of device.
Description of the drawings
Fig. 1 is a kind of structural representation of the QLED device preferred embodiments based on p-i-n structure of the present invention.
Fig. 2 is the structural representation of quantum dot light emitting layer in a kind of QLED devices based on p-i-n structure of the present invention.
Specific embodiment
The present invention provides a kind of QLED devices based on p-i-n structure, to make the purpose of the present invention, technical scheme and effect Clearer, clear and definite, the present invention is described in more detail below.It should be appreciated that specific embodiment described herein is only To explain the present invention, it is not intended to limit the present invention.
Fig. 1 is referred to, Fig. 1 is a kind of flow chart of the QLED device preferred embodiments based on p-i-n structure of the present invention, such as Shown in figure, by taking eurymeric QLED device as an example, the device includes substrate 10, hearth electrode to the embodiment of the present invention from bottom to up successively 20th, hole transmission layer 30, electronic barrier layer 40, quantum dot light emitting layer 50, hole blocking layer 60, electron transfer layer 70 and top electricity Pole 80, wherein, the hole transmission layer 30 be p-type material, the electron transfer layer 70 be n-type material, the quantum dot light emitting Layer 50 includes quanta point material and host material.
Specifically, for QLED devices, prior art prepares luminescent layer using pure quanta point material, although also take Obtained preferable device performance, but yet suffered from some problems, the cross relaxation phenomenon such as between quantum dot than more serious, And as the interconnection function that there is no host material between quantum dot, the consistency of quantum dot film be not generally high, this also causes There is larger current leakage in quantum dot light emitting device, so as to reduce the current efficiency of device；
Also, its luminescent quantum yield is very sensitive for extra electric field as luminescent material for quantum dot, under high driving voltage, It is very easy to cause Quantum Confined Stark effect, causes device light emitting efficiency rapid decrease and device performance unstable.
In order to solve the above problems, the present invention is by adopting the p-type material and n-type material of doping respectively as QLED devices Hole transmission layer 30 and electron transfer layer 70, drastically increase the electric conductivity of the QLED devices, effectively can reduce drive Voltage, so as to effectively reduce quenching of the Stark effect to quantum dot light emitting, improves device light emitting efficiency；
Further, the present invention reduces the relaxation of the intersection between quantum dot also by host material is introduced in quantum dot light emitting layer 50 Henan, enhanced rad recombination probability, while injected electrons and hole can also be effectively captured to improve current efficiency, so as to improve The service life and stability of the luminous efficiency and increase device of device, this efficiently solves current QLED commercial applications Major obstacle.
Further, in the present invention, the p-type material is TFB, polyTPD or PVK of doping F4-TCNQ, or described P-type material is one or more in copper doped, ferrum, aluminum and nickel of molybdenum oxide, nickel oxide, tungsten oxide or vanadium oxide.
Specifically, the p-type material belongs to extrinsic semiconductor of the hole concentration much larger than free electronic concentration, and which contains two Plant the hole in the free electron and valence band in carrier, i.e. conduction band；In p-type material, hole is son more, and free electron is few Son, the p-type material is mainly by hole conduction, and hole is mainly provided by foreign atom, and free electron is formed by thermal excitation, leads to In the case of often, the impurity of incorporation is more, more son（Hole）Concentration it is higher, its electric conductivity is stronger.
Further, in the present invention, the doping content of p-type material is 5wt-20wt%, it is preferable that the p-type material is mixed Miscellaneous concentration is 10 wt%, and in the concentration, the electric conductivity of the p-type material is optimal, i.e. the electric conductivity of hole transmission layer 30 Most preferably.
Further, in the present invention, the n-type material be Doped LiF, one or more in CsF, CsCOs and NDN1 NET5、Alq3Or OXD-7, or the n-type material be adulterated al, lithium, lanthanum, indium, gadolinium and magnesium in one or more ZnO or TiO2。
Specifically, the n-type material belongs to extrinsic semiconductor of the free electronic concentration much larger than hole concentration, in N-shaped material In material, free electron is son more, and hole is few son, and the n-type material is conductive mainly by free electron, and free electron mainly by Foreign atom is provided, and hole is formed by thermal excitation, it is generally the case that the impurity of incorporation is more, more son（Free electron）Concentration Higher, its electric conductivity is stronger.
Further, in the present invention, the doping content of n-type material is 2wt-10wt%, it is preferable that the n-type material is mixed Miscellaneous concentration is 6 wt%, and in the concentration, the electric conductivity of the n-type material is optimal, i.e., the electric conductivity of electron transfer layer 70 is most It is good.
Further, the thickness of the hole transmission layer 30 and electron transfer layer 70 is 5-100nm；When the hole passes When the thickness of defeated layer 30 and electron transfer layer 70 is excessive, its power consumption is larger, and electric conductivity is poor, needs higher driving voltage, leads Cause the luminous efficiency of device low；Preferably, in the QLED devices that the present invention is provided, the thickness of the hole transmission layer 30 is arranged For 25nm, the thickness of the electron transfer layer 70 is set to 20nm, and in the thickness value, the hole transmission layer 30 and electronics are passed The electric conductivity of defeated layer 70 is optimal, and required driving voltage is relatively low so that the luminosity and luminous efficiency of device has larger carrying Rise.
Further, in the present invention, the material of the electronic barrier layer 40 be PVK, TFB, polyTPB, NPB, TAPC, NiO、V2O5、MoO3Or WO3In one or more；The material of the hole blocking layer 60 is ET5、Alq3, OXD-7, ZnO or TiO2In one or more.
Further, in the present invention, the quantum dot light emitting layer 50 includes quanta point material and host material, the amount Son point material can be the II-VI group nucleocapsid quasiconductors such as CdSe/ZnS, CdZnS/ZnS, CdxZn1-xSeyS1-y/ZnS；Also may be used Think the group IV-VI nucleocapsid semi-conducting material such as PbSe/PbS, PbSe/CdS, PbSe/ZnS；Or be MAPbX3、CsPbX3Deng calcium Titanium ore luminescent material and luminescent quantum dot；And be the I-III-VI races semi-conducting materials such as Cu-In-S；
The host material is the Group II-VI semiconductor materials such as ZnS or ZnSe, or is ZnO, TiO2、SiO2Or Al2O3 Etc. nothing Machine nano-oxide, can also be the polymeric materials such as PMMA, PVP or PS.
Specifically, as shown in Fig. 2 in the present invention, the quantum dot light emitting layer 50 includes quanta point material 90 and substrate Material 100, the i.e. present invention cause the quantum dot in quantum dot light emitting layer to lead to by being introduced into host material in quantum dot light emitting layer 50 Cross host material to be connected with each other, so as to strengthen the consistency of quantum dot light emitting layer, can effectively prevent the electricity in quantum dot light emitting layer Dew is flowed, and reduces the cross relaxation between quantum dot, effectively capture is injected into electronics and hole in luminescent layer, so as to improve The current efficiency of device, and the further service life of give out light efficiency and the prolongation device of boost device.
It is preferred that in the present invention, the QLED devices are eurymeric QLED device or transoid QLED device.
Below by specific example, the present invention will be described in detail：
Embodiment 1
In a QLED, substrate of glass, 120nmITO；HTL is F4-TCNQ:TFB= 1:10, thickness is 25nm；EBL is TFB, EBL thickness is 15nm；I-EML is quantum dot layer (CdSe/ZnS) QDs/PMMA for introducing intrinsic host material PMMA, The percentage by weight of quanta point material CdSe/ZnS and host material PMMA is 10:1, thickness is 40 nanometers；HBL is nano oxidized Zinc, 10 nanometers of thickness；ETL is the Zinc Oxide of aluminum doping, and doping content 5wt%, thickness are 20nm；Electrode is Al.
Embodiment 2
In a QLED, substrate of glass, 120nmITO；HTL is Cu:MoO3=10wt%, thickness are 25nm；EBL is MoO3, EBL thickness is 10nm；I-EML is quantum dot layer (CdSe/ZnS) QDs/PMMA for introducing intrinsic host material PMMA, quantum Point material C dSe/ZnS is 10 with the percentage by weight of host material PMMA:1, thickness is 40 nanometers；HBL is nano zine oxide, 10 nanometers of thickness；ETL is the Zinc Oxide of lithium doping, and doping content 5%, thickness are 20nm；Electrode is Al.
Embodiment 3
In a QLED, substrate of glass, 120nmITO；HTL is F4-TCNQ:TFB =1:10, thickness is 25nm；EBL is TFB, EBL thickness is 15nm；I-EML is to introduce intrinsic host material SiO2Quantum dot layer (CdSe/ZnS) QDs of colloidal sol/ SiO2, quanta point material CdSe/ZnS and host material SiO2Percentage by weight be 10:1, thickness is 40 nanometers；HBL is nanometer Zinc Oxide, 10 nanometers of thickness；ETL is the Zinc Oxide of aluminum doping, and doping content 5wt%, thickness are 20nm；Electrode is Al.
In sum, the present invention provides a kind of QLED devices based on p-i-n structure, on the one hand by being made with p-type material For hole transmission layer and using n-type material as electron transfer layer, the driving voltage of QLED devices is reduced, so as to effectively reduce Quenching of the Stark effect to quantum dot light emitting；On the other hand, by intrinsic host material is introduced in quantum dot light emitting layer come Reduce the cross relaxation between quantum dot, enhanced rad recombination probability, while injected electrons and hole effectively can also be captured To improve current efficiency, so as to improving the luminous efficiency of device and increasing the service life and stability of device.
It should be appreciated that the application of the present invention is not limited to above-mentioned citing, and for those of ordinary skills, can To be improved according to the above description or be converted, all these modifications and variations should all belong to the guarantor of claims of the present invention Shield scope.

Claims (10)

1. a kind of QLED devices based on p-i-n structure, including substrate, hearth electrode, hole transmission layer, electronic barrier layer, quantum Point luminescent layer, hole blocking layer, electron transfer layer and top electrode, it is characterised in that the hole transmission layer is p-type material, The electron transfer layer is n-type material, and the quantum dot light emitting layer includes quanta point material and host material.
2. QLED devices based on p-i-n structure according to claim 1, it is characterised in that the p-type material is to mix TFB, polyTPD or PVK of miscellaneous F4-TCNQ, or the oxygen that the p-type material is one or more in copper doped, ferrum, aluminum and nickel Change molybdenum, nickel oxide, tungsten oxide or vanadium oxide, the n-type material is Doped LiF, one or more in CsF, CsCOs and NDN1 NET5, Alq3 or OXD-7, or the n-type material be adulterated al, lithium, lanthanum, indium, gadolinium and magnesium in one or more ZnO or TiO2。
3. QLED devices based on p-i-n structure according to claim 1, it is characterised in that the electronic barrier layer Material is PVK, TFB, polyTPB, NPB, TAPC, NiO, V2O5、MoO3Or WO3In one or more, the hole blocking layer Material be NET5, Alq3, OXD-7, ZnO or TiO2In one or more.
4. QLED devices based on p-i-n structure according to claim 1, it is characterised in that the host material is II- At least one of VI races semi-conducting material, inorganic nanometer oxide or polymeric material.
5. QLED devices based on p-i-n structure according to claim 4, it is characterised in that the II-VI group quasiconductor Material is ZnS or ZnSe, and the inorganic nanometer oxide is ZnO, TiO2、SiO2, or Al2O3, the polymeric material is PMMA, PVP or PS.
6. QLED devices based on p-i-n structure according to claim 1, it is characterised in that the quanta point material bag Include CdSe/ZnS, CdZnS/ZnS, CdxZn1-xSeyS1-y/ZnS, PbSe/PbS, PbSe/CdS, PbSe/ZnS, MAPbX3, CsPbX3 or Cu-In-S.
7. QLED devices based on p-i-n structure according to claim 1, it is characterised in that the hole transmission layer and The thickness of electron transfer layer is 5-100nm.
8. QLED devices based on p-i-n structure according to claim 1, it is characterised in that the doping of the p-type material Concentration is 5wt-20wt%.
9. QLED devices based on p-i-n structure according to claim 1, it is characterised in that the doping of the n-type material Concentration is 2wt-10wt%.
10. QLED devices based on p-i-n structure according to claim 1, it is characterised in that the QLED devices are for just Type QLED device or transoid QLED device.
CN201610939765.0A 2016-10-25 2016-10-25 A kind of QLED devices based on p i n structures and preparation method thereof Pending CN106549109A (en)

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