CN113258009B - Composite material and preparation method thereof, and quantum dot light-emitting diode - Google Patents
Composite material and preparation method thereof, and quantum dot light-emitting diode Download PDFInfo
- Publication number
- CN113258009B CN113258009B CN202010303448.6A CN202010303448A CN113258009B CN 113258009 B CN113258009 B CN 113258009B CN 202010303448 A CN202010303448 A CN 202010303448A CN 113258009 B CN113258009 B CN 113258009B
- Authority
- CN
- China
- Prior art keywords
- semiconductor material
- quantum dot
- composite material
- transport layer
- dot light
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/14—Carrier transporting layers
- H10K50/15—Hole transporting layers
- H10K50/155—Hole transporting layers comprising dopants
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/40—Thermal treatment, e.g. annealing in the presence of a solvent vapour
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Led Devices (AREA)
- Electroluminescent Light Sources (AREA)
Abstract
The invention relates to a composite material, a preparation method thereof and a quantum dot light-emitting diode. The composite material comprises a semiconductor material and a p-type dopant doped in the semiconductor material, wherein the p-type dopant is perfluoroalkylsilane. In the composite material, the perfluoroalkylsilane serving as the p-type dopant has strong electron-withdrawing capability, and can absorb electrons from the semiconductor material, so that holes are left, the hole concentration of the semiconductor material is improved, the conductivity of the semiconductor material is improved, the hole transmission efficiency is improved, and the hole transmission performance of the semiconductor material is improved. In addition, the invention also relates to a preparation method of the composite material and a quantum dot light-emitting diode comprising the composite material.
Description
Technical Field
The invention relates to the technical field of quantum dot light-emitting diodes, in particular to a composite material and a preparation method thereof, and a quantum dot light-emitting diode.
Background
Quantum dots (quantum dots) are semiconductor nanostructures that confine excitons in three spatial directions. Due to the unique optical properties of quantum dots, such as continuously adjustable emission wavelength with size and composition, narrow emission spectrum, high fluorescence efficiency, and good stability, quantum dot-based electroluminescent diodes (QLEDs) have been widely focused and studied in the display field. Meanwhile, the QLED display has many advantages that the LCD cannot achieve, such as large viewing angle, high contrast, fast response speed, and flexibility, and is expected to become a next generation display technology.
Over twenty years, the performance of QLEDs has improved greatly, but at the same time, it has faced significant challenges. The quantum dots have large valence band top energy levels (generally 6 eV-7 eV), so that the composite material with energy levels matched with the quantum dots is deficient, and the development of the QLED is restricted.
In MoS 2 、WS 2 、MoSe 2 And WSe 2 The representative transition metal sulfide/selenide is a special two-dimensional layered semiconductor material, which has excellent conductivity and stability, and the energy level of the transition metal sulfide/selenide can change along with the thickness and the size, for example, when the current thickness is a single layer or the size is small (quantum dots), the top energy level of the valence band can reach 6 eV-6.5 eV, and the transition metal sulfide/selenide is very suitable for being used as a composite material of a QLED. However, such materials have poor hole conductivity, which is disadvantageous for hole transport, resulting in a problem of low hole transport efficiency.
Disclosure of Invention
Based on this, the invention aims to improve the conductivity of the semiconductor material and increase the hole transport performance of the semiconductor material.
In order to achieve the purpose of the invention, the technical scheme adopted by the invention is as follows:
a composite material comprising a semiconductor material and a p-type dopant doped in the semiconductor material, the p-type dopant being a perfluoroalkylsilane.
In the composite material, the perfluoroalkylsilane serving as the p-type dopant has strong electron-withdrawing capability, and can absorb electrons from the semiconductor material, so that holes are left, the hole concentration of the semiconductor material is improved, the conductivity of the semiconductor material is improved, the hole transmission efficiency is improved, and the hole transmission performance of the semiconductor material is improved.
In one embodiment, the semiconductor material has an average particle size in a range of 1nm to 100 nm.
In one embodiment, the semiconductor material is selected from at least one of transition metal sulfides and transition metal selenides.
In one embodiment, the semiconductor material is selected from MoS 2 、WS 2 、MoSe 2 And WSe 2 At least one of (1).
In one embodiment, the alkyl group of the perfluoroalkylsilane is selected from at least one of methyl, ethyl, propyl, butyl, pentyl, hexyl, heptyl, octyl, nonyl, and decyl; the silane in the perfluoroalkylsilane is selected from at least one of trichlorosilane, trimethoxysilane and triethoxysilane.
In one embodiment, the perfluoroalkylsilane is selected from at least one of perfluorooctyltrimethoxysilane, perfluorooctyltriethoxysilane, and perfluorooctyltrichlorosilane.
A preparation method of a composite material comprises the following steps:
forming a semiconductor material on a substrate;
and injecting a p-type dopant or a p-type dopant solution into the surface of the semiconductor material, and carrying out heat treatment to obtain the composite material.
The preparation method of the composite material is simple in process, and tests prove that the composite material prepared by the preparation method can improve the conductivity of the semiconductor material and increase the hole transport performance of the semiconductor material.
In one embodiment, the temperature of the heat treatment is 60-80 ℃, and the time of the heat treatment is 1-2 h.
A quantum dot light-emitting diode comprises a hole transport layer, wherein the hole transport layer comprises the composite material or the composite material prepared by the preparation method.
Above-mentioned quantum dot light emitting diode simple structure, because of contain this application in its hole transport layer combined material, hole concentration and hole conductivity all obtain promoting, are showing and are improving hole transport efficiency, promote charge balance, promote the electro-optic conversion efficiency.
In one embodiment, the top valence band energy level of the semiconductor material in the composite material is between 5 electron volts and 8 electron volts; and/or the presence of a gas in the gas,
in one embodiment, the thickness of the hole transport layer is 10nm to 100 nm.
Drawings
Fig. 1 is a schematic diagram of a quantum dot light emitting diode according to an embodiment of the invention.
Detailed Description
In order to make the aforementioned objects, features and advantages of the present invention comprehensible, embodiments accompanied with figures are described in detail below. In the following description, numerous specific details are set forth in order to provide a thorough understanding of the present invention. This invention may, however, be embodied in many different forms and should not be construed as limited to the embodiments set forth herein.
Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs. The terminology used in the description of the invention herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention. As used herein, the term "and/or" includes any and all combinations of one or more of the associated listed items.
An embodiment of a composite material includes a semiconductor material and a p-type dopant doped in the semiconductor material, the p-type dopant being a perfluoroalkylsilane.
Among them, a semiconductor material refers to a class of materials that can be used as a hole transport material. Among them, the p-type dopant mainly functions to enhance the hole transport ability of the semiconductor material. Specifically, the perfluoroalkylsilane serving as the p-type dopant has strong electron-withdrawing capability, and can be used for withdrawing electrons from the semiconductor material, so that holes are left, the hole concentration of the semiconductor material is increased, the conductivity of the semiconductor material is further improved, the hole transmission efficiency is improved, and the hole transmission performance of the semiconductor material is improved.
Further, the semiconductor material is a quantum dot material. Based on the self-property of the quantum dot material, when the semiconductor material is the quantum dot material, the energy level of the semiconductor material is easier to regulate and control, so that the energy level of the semiconductor material is matched with the energy level of the material of the adjacent layer, and the improvement of the hole transmission efficiency is facilitated.
Further, the average particle size of the semiconductor material is in the range of 1nm to 100 nm. Besides being related to the properties of the quantum dot material, the top energy level of the valence band of the composite material is also a key factor influencing the top energy level of the valence band of the composite material. The inventors of the present application found that when the average particle size of the quantum dot material is in the range of 1nm to 100nm, the valence band top level of the semiconductor material of the present application can be made to be 6eV to 6.5eV, so that it can be well matched with the valence band top level of the quantum dot light emitting material in the quantum dot light emitting layer. In some embodiments, the average particle size of the quantum dot material is 1nm, 2nm, 3nm, 4nm, 5nm, 6nm, 7nm, 8nm, 9nm, or 10 nm.
Furthermore, the semiconductor material is distributed in layers, which may be, for example, a single layer or a stack of multiple layers.
Further, the semiconductor material is selected from at least one of transition metal sulfides and transition metal selenides. The inventor finds that the transition metal sulfide and the transition metal selenide are two-dimensional layered semiconductor materials, the valence band top energy level of the materials can reach 6 eV-6.5 eV (namely, the valence band top energy level is greater than or equal to 6 electron volts and less than or equal to 6.5 electron volts), the materials have excellent conductivity and stability, and the materials can be well matched with the valence band top energy level of a quantum dot luminescent material in a quantum dot luminescent layer, so that the materials are very suitable for being used as a composite material of a QLED.
Further, the semiconductor material is selected from MoS 2 、WS 2 、MoSe 2 And WSe 2 At least one of (1). The top energy level of the valence band of the materials, particularly the quantum dots, can reach 6 eV-6.5 eV, and the materials have good matching performance with the top energy level of the valence band of the quantum dot luminescent material. In addition, the material has a band gap between 2eV and 4eV, has excellent light transmittance in a visible light waveband, and is particularly suitable for being used as a composite material of a quantum dot light-emitting diode.
By the pair MoS 2 、WS 2 、MoSe 2 、WSe 2 The semiconductor materials are subjected to p-type doping, so that the work function and the hole conductivity of the materials are increased, the properties of the materials, such as energy level, light transmittance and the like, are not influenced, and the composite material is applied to the QLED to promote the development of the QLED.
Further, the alkyl group in the perfluoroalkylsilane is selected from at least one of methyl, ethyl, propyl, butyl, pentyl, hexyl, heptyl, octyl, nonyl, and decyl; the silane in the perfluoroalkylsilane is at least one selected from trichlorosilane, trimethoxysilane and triethoxysilane.
Further, the perfluoroalkyl silane is selected from at least one of perfluorooctyltrimethoxysilane, perfluorooctyltriethoxysilane and perfluorooctyltrichlorosilane.
Perfluoroalkyl groups in p-type dopants of the above-mentioned kind have a strong electron-withdrawing ability, and can attract electrons away from the semiconductor material, thereby leaving holes, increasing the hole concentration of the semiconductor material, and consequently increasing the hole conductivity thereof.
In the composite material, the perfluoroalkylsilane which is used as the p-type dopant has strong electron-withdrawing capability, and can absorb electrons from the semiconductor material, so that holes are left, the hole concentration of the semiconductor material is improved, the conductivity of the semiconductor material is improved, the hole transmission efficiency is improved, and the hole transmission performance of the semiconductor material is improved.
A method of making a composite material according to an embodiment, comprising the steps of:
and S10, forming a semiconductor material on the substrate.
Wherein the substrate serves to support the semiconductor material. The substrate herein is not limited to that of a QLED in the conventional sense, for example, when the QLED is in a face-up configuration, the anode can be used as the substrate; when the QLED is an inverted structure, the organic light emitting layer can be used as a substrate.
A semiconductor material may be formed on a substrate using a solution deposition method.
Further, the average particle size of the semiconductor material is in the range of 1nm to 100 nm.
Further, the semiconductor material is selected from at least one of transition metal sulfides and transition metal selenides.
Further, the semiconductor material is selected from MoS 2 、WS 2 、MoSe 2 And WSe 2 At least one of (1).
Further, the alkyl group in the perfluoroalkylsilane is selected from at least one of methyl, ethyl, propyl, butyl, pentyl, hexyl, heptyl, octyl, nonyl, and decyl; the silane in the perfluoroalkylsilane is selected from at least one of trichlorosilane, trimethoxysilane and triethoxysilane.
Further, the perfluoroalkyl silane is selected from at least one of perfluorooctyltrimethoxysilane, perfluorooctyltriethoxysilane and perfluorooctyltrichlorosilane.
And S20, injecting p-type dopant or p-type dopant solution into the surface of the semiconductor material, and performing heat treatment to obtain the hole transport layer.
When the p-type dopant is in a liquid state, pure p-type dopant can be injected, or the p-type dopant can be prepared into a solution for use; when the p-type dopant itself is in a solid state, it is necessary to add water to the p-type dopant to prepare a solution.
Wherein the purpose of the heat treatment is: first, accelerating the interaction of p-type dopants with the semiconductor material; second, the evaporation of excess p-type dopant solution that has not interacted with the semiconductor material is accelerated.
Further, the temperature of the heat treatment is 60-80 ℃, and the time of the heat treatment is 1-2 h.
Further, the following steps may be included after the heat treatment: after cooling, the surface is cleaned with an organic solvent to remove excess p-type dopant. The organic solvent may be toluene or other solvent capable of dissolving the p-type dopant.
The preparation method of the composite material is simple in process, and tests prove that the composite material prepared by the preparation method can improve the conductivity of the semiconductor material and increase the hole transport performance of the semiconductor material.
The quantum dot light-emitting diode of an embodiment comprises a hole transport layer, and the hole transport layer comprises the composite material or the composite material prepared by the preparation method.
Furthermore, the top energy level of the valence band of the semiconductor material in the composite material is 5-8 electron volts. At this time, the top valence band level of the semiconductor material has good matching with the top valence band level of the light emitting layer material.
Further, the thickness of the hole transport layer is 10nm to 100 nm. More preferably, the hole transport layer has a thickness of 20nm to 50 nm.
Furthermore, the quantum dot light-emitting diode also comprises an anode, a quantum dot light-emitting layer, an electron transport layer and a cathode, wherein the quantum dot light-emitting layer is arranged between the anode and the cathode, the hole transport layer is arranged between the anode and the quantum dot light-emitting layer, and the electron transport layer is arranged between the quantum dot light-emitting layer and the cathode.
It should be noted that the quantum dot light emitting diode of the present invention may have an inverted structure or an upside-down structure.
When the quantum dot light emitting diode can be an upright structure, referring to fig. 1, a quantum dot light emitting diode 100 according to an embodiment includes a substrate 101, an anode 102, a hole injection layer 103, a hole transport layer 104, a quantum dot light emitting layer 105, an electron transport layer 106, and a cathode 107, which are sequentially stacked.
Wherein the anode 102 is located below the hole transport layer 104.
Among them, the material of the hole injection layer 103 may be a conductive polymer, such as: PEDOT: PSS; it may also be a high work function n-type semiconductor, such as: HAT-CN, MoO 3 、WO 3 、V 2 O 5 、Rb 2 O, and the like. It is understood that the hole injection layer 103 may not be provided.
Wherein the hole transport layer 104 contains a composite material according to any of the embodiments of the present invention, the composite material includes a semiconductor material and a p-type dopant doped in the semiconductor material; the top energy level of the valence band of the semiconductor material is 5-8 electron volts, and the p-type dopant is perfluoroalkylsilane.
Wherein, the quantum dot light emitting layer 105 is positioned above the hole transport layer 104. The material of the quantum dot light emitting layer 105 is selected from at least one of II-VI compound, III-V compound, I-III-VI compound, IV simple substance and perovskite quantum dot.
Among them, the group II-VI compound semiconductors include, but are not limited to, ZnCdSeS, CdSe/ZnSe, CdSeS/CdS, CdSe/CdS/ZnS, ZnCdS/ZnS and ZnCdSeS/ZnS. Group III-V compound semiconductors include, but are not limited to, InP and InP/ZnS. Group I-III-VI compound semiconductors include, but are not limited to, CuInS, AgInS, CuInS/ZnS, and AnInS/ZnS. Group IV elemental semiconductors include, but are not limited to, Si, C, and Graphene.
Wherein, the electron transport layer 106 is located above the quantum dot light emitting layer 105. The electron transport material may be an n-type organic semiconductor or an n-type metal oxide. Among them, the n-type organic semiconductor includes, but is not limited to, TPBi, TmPyPb, BCP, Bphen, TmPyTz, B3PYMPM, 3TPYMB, and PO-T2T. n-type metal oxides include, but are not limited to, ZnO, ZnMgO, ZnAlO, TiO 2 And SnO 2 。
Wherein the cathode 107 is located above the electron transport layer 106.
It is understood that the qd-led 100 may further include an electron injection layer, and the electron injection layer is located between the electron transport layer 106 and the cathode 107. The material of the electron injection layer may be an alkali metal salt, for example: LiF, NaF, CsF, Cs 2 CO 3 Etc.; may be a low work function metal such as: yb, Ba, etc.
Of course, the quantum dot light emitting diode according to the present invention is not limited to the above-described embodiment, and may have an inverted structure in which the substrate is located on the cathode side.
Above-mentioned quantum dot light emitting diode simple structure, because of contain this application in its hole transport layer combined material, hole concentration and hole conductivity all obtain promoting, are showing and are improving hole transport efficiency, promote charge balance, promote the electro-optic conversion efficiency.
In order to make the objects and advantages of the present application more apparent, the present application is further described in detail with reference to the following examples. It should be understood that the specific embodiments described herein are merely illustrative of the present application and are not intended to limit the present application.
Example 1
Taking a transparent conductive film ITO with the thickness of 50nm as an anode;
PSS is deposited on the anode by a solution method to form a hole injection layer with the thickness of 30 nm;
solution deposition of MoS on hole injection layer 2 Quantum dots forming a hole transport layer precursor having a thickness of 30 nm;
dripping a perfluorooctyl trimethoxy silane solution on the hole transport layer precursor, baking for 1.5h at 70 ℃, and cleaning the surface with toluene to form a hole transport layer;
depositing ZnCdS/ZnS quantum dots on the hole transport layer by using a solution method to form a quantum dot light-emitting layer with the thickness of 30 nm;
ZnMgO is deposited on the quantum dot light-emitting layer by a solution method to form an electron transport layer with the thickness of 40 nm;
ag was deposited on the electron transport layer by evaporation to form a cathode having a thickness of 100 nm.
Example 2
Taking a transparent conductive film ITO with the thickness of 50nm as an anode;
PSS is deposited on the anode by a solution method to form a hole injection layer with the thickness of 30 nm;
solution deposition of MoS on hole injection layer 2 Quantum dots forming a hole transport layer precursor having a thickness of 30 nm;
dripping a perfluorooctyl triethoxysilane solution on the hole transport layer precursor, baking for 1.5h at 70 ℃, and cleaning the surface with toluene to form a hole transport layer;
depositing ZnCdS/ZnS quantum dots on the hole transport layer by a solution method to form a quantum dot light-emitting layer with the thickness of 30 nm;
ZnMgO is deposited on the quantum dot light-emitting layer by a solution method to form an electron transport layer with the thickness of 40 nm;
ag was deposited on the electron transport layer by evaporation to form a cathode having a thickness of 100 nm.
Example 3
Taking a transparent conductive film ITO with the thickness of 50nm as an anode;
PSS is deposited on the anode by a solution method to form a hole injection layer with the thickness of 30 nm;
solution deposition of MoS on hole injection layer 2 Quantum dots forming a hole transport layer precursor having a thickness of 30 nm;
dripping a perfluorooctyl trichlorosilane solution on the hole transport layer precursor, baking for 1.5h at 70 ℃, and cleaning the surface with toluene to form a hole transport layer;
depositing ZnCdS/ZnS quantum dots on the hole transport layer by a solution method to form a quantum dot light-emitting layer with the thickness of 30 nm;
ZnMgO is deposited on the quantum dot light-emitting layer by a solution method to form an electron transport layer with the thickness of 30 nm;
ag was deposited on the electron transport layer by evaporation to form a cathode having a thickness of 100 nm.
Example 4
Taking a transparent conductive film ITO with the thickness of 50nm as an anode;
PSS is deposited on the anode by a solution method to form a hole injection layer with the thickness of 30 nm;
deposition of WS on hole injection layer using solution method 2 Quantum dots forming a hole transport layer precursor having a thickness of 30 nm;
dripping a perfluorooctyl trimethoxy silane solution on the hole transport layer precursor, baking for 1.5h at 70 ℃, and cleaning the surface with toluene to form a hole transport layer;
depositing ZnCdS/ZnS quantum dots on the hole transport layer by a solution method to form a quantum dot light-emitting layer with the thickness of 30 nm;
ZnAlO is deposited on the quantum dot light-emitting layer by a solution method to form an electron transport layer with the thickness of 50 nm;
al was deposited on the electron transport layer by evaporation to form a cathode having a thickness of 100 nm.
Example 5
Taking a transparent conductive film ITO with the thickness of 50nm as an anode;
PSS is deposited on the anode by a solution method to form a hole injection layer with the thickness of 30 nm;
solution deposition of MoSe on hole injection layer 2 Quantum dots forming a hole transport layer precursor having a thickness of 30 nm;
dripping a perfluorooctyl trimethoxy silane solution on the hole transport layer precursor, baking for 1.5h at 70 ℃, and cleaning the surface with toluene to form a hole transport layer;
depositing ZnCdS/ZnS quantum dots on the hole transport layer by a solution method to form a quantum dot light-emitting layer with the thickness of 30 nm;
ZnAlO is deposited on the quantum dot light-emitting layer by a solution method to form an electron transport layer with the thickness of 50 nm;
al was deposited on the electron transport layer by evaporation to form a cathode having a thickness of 100 nm.
Example 6
Taking a transparent conductive film ITO with the thickness of 50nm as an anode;
PSS is deposited on the anode by a solution method to form a hole injection layer with the thickness of 30 nm;
deposition of WS on hole injection layer using solution method 2 Quantum dots forming a hole transport layer precursor having a thickness of 30 nm;
dripping a perfluorooctyl trimethoxy silane solution on the hole transport layer precursor, baking for 1.5h at 70 ℃, and cleaning the surface with toluene to form a hole transport layer;
depositing ZnCdS/ZnS quantum dots on the hole transport layer by a solution method to form a quantum dot light-emitting layer with the thickness of 30 nm;
ZnAlO is deposited on the quantum dot light-emitting layer by a solution method to form an electron transport layer with the thickness of 50 nm;
al was deposited on the electron transport layer by evaporation to form a cathode having a thickness of 100 nm.
Comparative example 1
Taking a transparent conductive film ITO with the thickness of 50nm as an anode;
PSS is deposited on the anode by a solution method to form a hole injection layer with the thickness of 30 nm;
solution deposition of MoS on hole injection layer 2 Quantum dots forming a hole transport layer having a thickness of 30 nm;
depositing ZnCdS/ZnS quantum dots on the hole transport layer by a solution method to form a quantum dot light-emitting layer with the thickness of 30 nm;
ZnMgO is deposited on the quantum dot light-emitting layer by a solution method to form an electron transport layer with the thickness of 40 nm;
ag was deposited on the electron transport layer by evaporation to form a cathode having a thickness of 100 nm.
And (3) testing:
(1) work functions of the undoped and p-type doped hole transport layer materials were examined to obtain table 1:
TABLE 1
| Substance(s) | Work function (eV) |
| MoS 2 Quantum dots | 4.4 |
| WS 2 Quantum dots | 4.6 |
| MoSe 2 Quantum dots | 4.2 |
| WSe 2 Quantum dots | 4.5 |
| Perfluorooctyltrimethoxysilane doped MoS 2 Quantum dots | 5.1 |
| Perfluorooctyltriethoxysilane doped MoS 2 Quantum dots | 4.9 |
| Perfluorooctyltrichlorosilane doped MoS 2 Quantum dots | 5.0 |
| Perfluorooctyltrimethoxysilane doped WS 2 Quantum dots | 5.2 |
| Perfluorooctyltrimethoxysilane doped MoSe 2 Quantum dots | 4.7 |
| Perfluorooctyltrimethoxysilane doped WSe 2 Quantum dots | 5.2 |
As can be seen from Table 1, the p-type doped MoS 2 Quantum dots, WS 2 Quantum dot and MoSe 2 Quantum dots and WSe 2 The work function of the quantum dots is obviously increased compared with that of the undoped similar material, which shows that the MoS treated by the perfluoroalkyl silane 2 Quantum dots, WS 2 Quantum dot and MoSe 2 Quantum dots and WSe 2 The hole concentration of the quantum dots is remarkably improved.
(2) The driving voltage, the maximum external quantum efficiency and the lifetime of the quantum dot light emitting diodes of examples 1 to 6 and comparative example 1 were examined to obtain table 2:
TABLE 2
Wherein the driving voltage @10mA/cm 2 Shows that the current density of the QLED reaches 10mA/cm 2 The voltage required;
the external quantum efficiency (%) represents the electro-optic conversion efficiency of the QLED, theoretically equal to the number of emitted photons compared to the number of injected electrons, and is generally calculated from the current (I) -voltage (V) -luminance (L) data of the device;
T50(h)@1000cd/m 2 is a physical quantity representing the lifetime of the QLED, which means that the QLED is in 1000cd/m 2 The time elapsed until the luminance decayed to 50% of the initial luminance for the initial luminance to continue lighting.
As can be seen from Table 2, the quantum dot light emitting diodes of examples 1 to 6 have higher driving voltage, maximum external quantum efficiency and lifetime than those of comparative example 1, indicating that the MoS treated with the perfluoroalkylsilane 2 Quantum dots,WS 2 Quantum dot and MoSe 2 Quantum dots and WSe 2 The hole concentration of the quantum dots is obviously improved, so that the driving voltage, the maximum external quantum efficiency and the service life of the quantum dot light-emitting diode are improved.
The technical features of the embodiments described above may be arbitrarily combined, and for the sake of brevity, all possible combinations of the technical features in the embodiments described above are not described, but should be considered as being within the scope of the present specification as long as there is no contradiction between the combinations of the technical features.
The above-mentioned embodiments only express several embodiments of the present invention, and the description thereof is more specific and detailed, but not construed as limiting the scope of the invention. It should be noted that, for a person skilled in the art, several variations and modifications can be made without departing from the inventive concept, which falls within the scope of the present invention. Therefore, the protection scope of the present patent shall be subject to the appended claims.
Claims (8)
1. A composite material for a quantum dot light emitting diode hole transport layer, the composite material comprising a semiconductor material and a p-type dopant doped in the semiconductor material, the semiconductor material being selected from transition metal selenides, the p-type dopant being a perfluoroalkylsilane selected from at least one of perfluorooctyltrimethoxysilane, perfluorooctyltriethoxysilane, and perfluorooctyltrichlorosilane.
2. The composite material of claim 1, wherein the average particle size of the semiconductor material is in the range of 1nm to 100 nm.
3. Composite material according to any one of claims 1 to 2, characterized in that the semiconducting material is selected from MoSe 2 And WSe 2 At least one of (1).
4. A preparation method of a composite material for a hole transport layer of a quantum dot light-emitting diode is characterized by comprising the following steps:
forming a semiconductor material on a substrate;
injecting a p-type dopant or a p-type dopant solution into the surface of the semiconductor material, and performing heat treatment to obtain a composite material;
the semiconductor material is selected from transition metal selenides, the p-type dopant is perfluoroalkylsilane, and the perfluoroalkylsilane is selected from at least one of perfluorooctyltrimethoxysilane, perfluorooctyltriethoxysilane, and perfluorooctyltrichlorosilane.
5. The preparation method of the composite material according to claim 4, wherein the temperature of the heat treatment is 60 ℃ to 80 ℃, and the time of the heat treatment is 1h to 2 h.
6. A quantum dot light-emitting diode, characterized in that the quantum dot light-emitting diode comprises a hole transport layer, wherein the hole transport layer comprises the composite material of any one of claims 1 to 3 or the composite material prepared by the preparation method of any one of claims 4 to 5.
7. The quantum dot light-emitting diode of claim 6, wherein the top valence band energy level of the semiconductor material in the composite material is between 5 electron volts and 8 electron volts; and/or the presence of a gas in the gas,
the thickness of the hole transport layer is 10 nm-100 nm.
8. The quantum dot light-emitting diode of claim 6, wherein the hole transport layer has a thickness of 20nm to 50 nm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010303448.6A CN113258009B (en) | 2020-04-17 | 2020-04-17 | Composite material and preparation method thereof, and quantum dot light-emitting diode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010303448.6A CN113258009B (en) | 2020-04-17 | 2020-04-17 | Composite material and preparation method thereof, and quantum dot light-emitting diode |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN113258009A CN113258009A (en) | 2021-08-13 |
| CN113258009B true CN113258009B (en) | 2022-08-05 |
Family
ID=77220034
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202010303448.6A Active CN113258009B (en) | 2020-04-17 | 2020-04-17 | Composite material and preparation method thereof, and quantum dot light-emitting diode |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN113258009B (en) |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20170076860A (en) * | 2015-12-24 | 2017-07-05 | 삼성디스플레이 주식회사 | Light emitting diode and display device including the same |
| CN108899433A (en) * | 2018-07-17 | 2018-11-27 | 嘉兴纳鼎光电科技有限公司 | Hole transmission layer, preparation method and semiconductor photoelectric device |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20080033335A (en) * | 2005-07-01 | 2008-04-16 | 신벤션 아게 | Process for the production of porous reticulated composite materials |
| KR20110044240A (en) * | 2008-07-22 | 2011-04-28 | 이 아이 듀폰 디 네모아 앤드 캄파니 | Aqueous dispersions of electrically conducting polymers containing inorganic nanoparticles |
| WO2015092840A1 (en) * | 2013-12-16 | 2015-06-25 | 株式会社日立製作所 | Organic light-emitting element |
| CN106384765B (en) * | 2016-11-03 | 2020-01-14 | Tcl集团股份有限公司 | Quantum dot light-emitting diode and preparation method thereof |
| CN106531895B (en) * | 2016-12-12 | 2019-09-10 | Tcl集团股份有限公司 | Light emitting diode with quantum dots and preparation method thereof and illuminating module, display device |
| CN109326726B (en) * | 2017-07-31 | 2021-03-16 | Tcl科技集团股份有限公司 | QLED device and preparation method thereof |
-
2020
- 2020-04-17 CN CN202010303448.6A patent/CN113258009B/en active Active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20170076860A (en) * | 2015-12-24 | 2017-07-05 | 삼성디스플레이 주식회사 | Light emitting diode and display device including the same |
| CN108899433A (en) * | 2018-07-17 | 2018-11-27 | 嘉兴纳鼎光电科技有限公司 | Hole transmission layer, preparation method and semiconductor photoelectric device |
Also Published As
| Publication number | Publication date |
|---|---|
| CN113258009A (en) | 2021-08-13 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN103904178A (en) | Quantum dot luminescent device | |
| CN111384256B (en) | Quantum dot light-emitting diode and preparation method thereof | |
| CN112331779B (en) | Quantum dot light-emitting diode and preparation method thereof and quantum dot light-emitting layer passivation method | |
| CN111509131B (en) | Light emitting device, manufacturing method thereof and display device | |
| CN111384279A (en) | Quantum dot light-emitting diode | |
| CN111540837B (en) | Quantum dot light emitting device and display device | |
| CN112349852A (en) | Electron transport material, and preparation method and application thereof | |
| CN112331784B (en) | Film and use thereof | |
| CN111326664A (en) | Quantum dot light-emitting diode device and ink for manufacturing same | |
| CN111384280A (en) | Quantum dot light-emitting diode and preparation method thereof | |
| CN112349853B (en) | Electroluminescent device, preparation method thereof and display device | |
| CN109980105A (en) | A kind of QLED device | |
| CN111244298B (en) | Light-emitting device and display | |
| CN113258009B (en) | Composite material and preparation method thereof, and quantum dot light-emitting diode | |
| CN110649168B (en) | Quantum dot light-emitting diode and preparation method thereof | |
| CN111162183B (en) | Quantum dot light-emitting diode, preparation method thereof and light source structure | |
| CN112331787B (en) | Application of metal tetraphenylporphyrin complex in electron transport material, quantum dot light-emitting device and preparation method thereof, and light-emitting device | |
| CN112341606B (en) | Compound, preparation method thereof and quantum dot light emitting diode | |
| CN109980104A (en) | A kind of QLED device | |
| CN111490172B (en) | Light emitting device | |
| CN110544746B (en) | Light emitting diode and preparation method thereof | |
| CN112331781B (en) | Hole transport material, preparation method thereof and electroluminescent device | |
| KR101687637B1 (en) | White light-emitting device using the light-emitting layer and the color converting layer with a single quantum dot | |
| CN110970534A (en) | Nickel oxide film, preparation method thereof and quantum dot light-emitting diode | |
| WO2024103982A1 (en) | Photoelectric device and preparation method therefor, and display apparatus |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |