CN112349852A - Electron transport material, and preparation method and application thereof - Google Patents
Electron transport material, and preparation method and application thereof Download PDFInfo
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Abstract
The invention relates to an electron transport material, a preparation method and application thereof. The structure of the electron transport material comprises a core and a shell layer; the material of the inner core is metal oxide; and the conduction band bottom energy level of the material of the shell layer is less than that of the material of the inner core. The electron transmission material has an electron quantum well energy level structure, can effectively reduce the electron mobility of an electron transmission layer, reduce the quantity of electrons moving to a quantum dot light emitting layer, and promote charge balance of the QLED.
Description
Technical Field
The invention relates to the field of luminescent devices, in particular to an electron transport material and a preparation method and application thereof.
Background
Due to the unique optical properties of quantum dots, such as continuously adjustable light-emitting wavelength with size and composition, narrow light-emitting spectrum, high fluorescence efficiency, good stability, etc., quantum dot-based light-emitting diodes (QLEDs) are gaining wide attention and research in the display field. Meanwhile, the QLED display has many advantages that the LCD cannot achieve, such as large viewing angle, high contrast, fast response speed, and flexibility, and is expected to become a next generation display technology.
Over decades of development, the performance of QLEDs has advanced greatly, for example: on the premise of no special light extraction layer, the reported maximum external quantum efficiency of the red and green QLEDs is over 20 percent, which is close to the theoretical limit, and the maximum external quantum efficiency of the blue QLED is also close to 20 percent. QLEDs, especially blue QLEDs, perform less well in terms of lifetime. Currently, the prevailing view is that: electron-hole imbalance is a major cause of the low lifetime of QLEDs. This is caused by the unique energy level structure of the quantum dots and the asymmetric charge injection barrier (the hole injection barrier is much larger than the electron injection barrier) between the light emitting layer of the quantum dots and the cathode and anode. In addition, an obvious hole barrier exists between the HOMO energy level of the common hole transport material and the top energy level of the valence band of the quantum dot, and holes cannot be effectively injected.
Therefore, in order to effectively solve the problem of the imbalance of the electron and the hole, it is two fundamental research directions to improve the hole injection efficiency or reduce the electron injection efficiency. Currently, a number of attempts have been made by academia to do this. For example: insulating layers are arranged between the quantum dot light-emitting layer and the metal oxide electron transport layer and between the cathode and the metal oxide electron transport layer to block electron injection; p-type doping is carried out on the metal oxide electron transport material to reduce the electron mobility of the metal oxide electron transport material; in the QLED device with the inverted structure, a dipole layer is arranged between a quantum dot light-emitting layer and a hole transport layer, the top energy level of a valence band on the surface of the quantum dot light-emitting layer is raised, and a hole transport barrier is reduced; and so on. Although these researches deepen the understanding of the operating mechanism of the QLED and greatly improve the efficiency of the QLED, the life of the QLED still does not meet the commercial standard, especially the blue QLED.
Disclosure of Invention
Based on the electron transport material, the electron transport material has an electron quantum well energy level structure, and after the formed electron transport layer replaces the original metal oxide electron transport layer structure with a flat band structure, the electron mobility of the electron transport layer can be effectively reduced, the number of electrons moving to a quantum dot light emitting layer is reduced, and the charge balance of a QLED is promoted.
The technical scheme is as follows:
an electron transport layer material, the structure of the electron transport layer material comprises a core and a shell layer;
the material of the inner core is metal oxide;
and the conduction band bottom energy level of the material of the shell layer is less than that of the material of the inner core.
The invention also provides a preparation method of the electron transport layer material.
The technical scheme is as follows:
a preparation method of an electron transport layer material comprises the following steps:
dissolving a metal source in a solvent, adding an alkaline solution, and reacting for 1-2h to obtain metal oxide nanoparticles;
coating the surface of the metal oxide nano particle with a shell layer material;
and the conduction band bottom energy level of the material of the shell layer is less than that of the metal oxide nano particles.
The invention also provides a quantum dot light-emitting diode.
The technical scheme is as follows:
an electron transport layer of the quantum dot light-emitting diode is the electron transport layer or the electron transport material prepared by the preparation method.
Compared with the prior art, the invention has the following beneficial effects:
the electron transport material has a core-shell structure, and the conduction band bottom energy level of the core is metal oxide, and the conduction band bottom energy level of the shell is smaller than that of the core, so that the conduction band of the electron transport material forms an electron quantum well energy level structure, and the electron transport material with the electron quantum well energy level structure can bring the following advantages:
(1) the electron transport layer is adjacent to the cathode (for example, Al or Ag), and the shell layer enables an electron barrier to exist between the cathode and the metal oxide of the core material, thereby being beneficial to limiting the injection of electrons.
(2) A quantum well is formed between the conduction band bottom energy level of the material of the shell layer and the conduction band bottom energy level of the material of the core, electrons can be captured and limited in the well, and the electron cloud overlapping of the material of the core is limited, so that the electrons are more transmitted by jumping, the electron mobility of the metal oxide electron transmission material can be obviously reduced, the number of electrons moving to the quantum dot light emitting layer is reduced, the charge balance of the QLED is promoted, and the service life of the QLED is prolonged.
(3) The existence of the shell layer can also effectively passivate the surface of the metal oxide of the core material, reduce the surface defects and reduce the defect energy level.
Drawings
FIG. 1 is a schematic diagram of the energy level structures of type I and type II electron quantum wells;
FIG. 2 is a schematic diagram of the band structure of the cathode and the electron transport layer;
fig. 3 is a schematic structural diagram of a QLED device.
Detailed Description
The electron transport material of the present invention, the method for producing the same, and the use thereof will be described in further detail with reference to specific examples. The present invention may be embodied in many different forms and is not limited to the embodiments described herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete.
Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs. The terminology used in the description of the invention herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention. As used herein, the term "and/or" includes any and all combinations of one or more of the associated listed items.
An electron transport material, the structure of which comprises a core and a shell;
the material of the inner core is metal oxide;
and the conduction band bottom energy level of the material of the shell layer is less than that of the material of the inner core.
Specifically, the material of the inner core includes, but is not limited to, ZnO, TiO2And SnO2。
The electron transport material can be classified into two energy level structures of type I and type II according to the material of the selected shell layer, as shown in fig. 1.
In the electron transport material with the type I energy level structure, the material of a shell layer needs to meet the following 2 conditions:
(1) the conduction band bottom energy level of the material of the shell layer is smaller than that of the material of the core.
(2) The top energy level of the valence band of the material of the shell layer is greater than that of the material of the core.
The material of the shell layer satisfying the above conditions includes, but is not limited to, SiO2And Al2O3。
Preferably, the difference between the conduction band bottom energy level of the material of the shell layer and the conduction band bottom energy level of the material of the core is greater than or equal to 2 eV.
In the electron transport material with the type II energy level structure, the material of the shell layer needs to meet the following 2 conditions:
(1) the conduction band bottom energy level of the material of the shell layer is smaller than that of the material of the core.
(2) The top energy level of the valence band of the material of the shell layer is less than that of the material of the core.
Materials of the shell layer satisfying the above conditions include, but are not limited to, ZnS, ZnSe, and ZnTe.
Preferably, a difference between a conduction band energy level of the material of the shell layer and a conduction energy level of the core material is 1eV or more.
The type I and type II energy level structures are electron quantum well energy level structures, and after an electron transport layer is formed by the electron transport material with the energy level structures, the following advantages can be brought:
(1) the electron transport layer is generally adjacent to the cathode (for example, Al, Ag), as shown in fig. 2, 201 is the cathode, 202 is the electron transport layer, the shell layer makes an electron barrier exist between the cathode and the core material metal oxide, and the electron injection is blocked by the barrier of the shell layer, which is beneficial to limiting the electron injection.
(2) A quantum well is formed between the conduction band bottom energy level of the shell material and the conduction band bottom energy level of the core material, electrons can be captured and limited in the well, and the electron cloud overlapping of the core material is limited, so that more electrons are transmitted by jumping, the electron mobility of the metal oxide electron transmission material can be obviously reduced, the number of electrons moving to the quantum dot light emitting layer is reduced, the charge balance of the QLED is promoted, and the service life of the QLED is prolonged.
(3) The existence of the shell layer can also effectively passivate the surface of the metal oxide of the core material, reduce the surface defects and reduce the defect energy level.
In general, the binding force of the electron transport material of type I energy level structure to electrons is stronger than that of type II structureThe electron transport material is much stronger, and in the type I level structure electron transport material, the shell material satisfying the conditions has a certain insulation property, and thus may excessively hinder the electron transport. Therefore, the electron transport material of type II structure is preferred. More preferably, the electron transport material is ZnO/ZnS, ZnO/ZnSe, SnO2/ZnSe。
A preparation method of an electron transport material comprises the following steps:
preparing metal oxide core nanoparticles: dissolving a metal source in a solvent, adding an alkaline solution, and reacting for 1-2h to obtain metal oxide nanoparticles;
coating the surface of the metal oxide nano particle with a shell layer material;
and the conduction band bottom energy level of the material of the shell layer is less than that of the metal oxide nano particles.
Preferably, the step of coating the shell material on the surface of the metal oxide nanoparticle comprises:
and adding a shell material precursor into the metal oxide nano particles, and reacting for 1-4 h.
When preparing the electron transport material with the type II structure, the precursor of the shell material is preferably at least two of a sulfur source, a selenium source, a tellurium source and a zinc source.
The wrapping method comprises the following steps: firstly, adding a sulfur source, a selenium source or a tellurium source into the metal oxide nano particles, stirring for 1h-2h, then adding a zinc source, and continuously stirring for 1h-2 h.
When preparing the electron transport material of the type I structure, the shell material precursor is preferably a silicon source or an aluminum source.
The wrapping method comprises the following steps: firstly, dispersing the metal oxide nanoparticles in an alkaline solution, then adding a silicon source or an aluminum source, and continuously dispersing for 1h-2 h.
Specifically, electron transport materials ZnO/ZnS, ZnO/ZnSe, SnO2The preparation method of/ZnSe comprises the following steps:
preparing metal oxide core nanoparticles: dissolving a zinc source (such as zinc acetate dihydrate) or a titanium source (such as titanium isopropoxide) or a tin source (such as tin chloride pentahydrate) in a solvent (such as ethanol, isopropanol, dimethyl sulfoxide, etc.), slowly adding an alkaline solution (such as sodium hydroxide solution, potassium hydroxide solution, tetramethylammonium hydroxide solution, etc.), and continuously stirring and reacting for 1-2 h; finally, the metal oxide nano particles are obtained by centrifugation and are dissolved in alcohol solvents (such as ethanol, isopropanol and the like) for standby.
Growing a shell layer on the surface of the core: taking the prepared metal oxide nanoparticle solution, slowly adding a sulfur source (such as sodium sulfide) or a selenium source (such as sodium selenite), and stirring for reacting for 1-2 h; then, slowly adding a zinc source (such as zinc chloride and the like), and continuously stirring to react for 1-2 h; finally, centrifuging to obtain the electron transmission material ZnO/ZnS or ZnO/ZnSe or SnO with the core-shell structure2ZnSe, and dissolving in alcohol solvent (such as ethanol, isopropanol, etc.).
An electron transport layer of the quantum dot light-emitting diode is the electron transport layer or the electron transport material prepared by the preparation method.
It can be understood that the quantum dot light emitting diode further comprises an anode, a hole injection layer, a hole transport layer, a quantum dot light emitting layer and a cathode, wherein the hole injection layer is arranged on the anode, the hole transport layer is arranged on the hole injection layer, the quantum dot light emitting layer is arranged on the hole transport layer, the electron transport layer is arranged on the quantum dot light emitting layer, and the cathode is arranged on the electron transport layer.
The quantum dots may be group II-VI compound semiconductors, such as: CdSe, ZnCdS, CdSeS, ZnCdSeS, CdSe/ZnS, CdSeS/ZnS, CdSe/CdS/ZnS, ZnCdS/ZnS, CdS/ZnS, ZnCdSeS/ZnS, etc.; may be a group III-V compound semiconductor, for example: InP, InP/ZnS, etc.; may be a group I-III-VI compound semiconductor, for example: CuInS, AgInS, CuInS/ZnS, AnInS/ZnS, etc.; may be group IV elementary semiconductors such as Si, C, Graphene, etc.; may be perovskite quantum dots, for example: CsPbM3(M ═ Cl, Br, I), and the like.
The hole transport layer may be organicHole transport layers, for example: Poly-TPD, TFB, PVK, TCTA, CBP, NPB, NPD, etc.; or an inorganic hole transport layer, e.g. NiO, Cu2O, CuSCN, etc.
The hole injection layer may be a conductive polymer, for example: PEDOT: PSS; it may also be a high work function n-type semiconductor, such as: HAT-CN, MoO3、WO3、V2O5、Rb2O, and the like.
The following is a further description with reference to specific examples.
Example 1
The embodiment provides a ZnO/ZnS electron transport material with a core-shell structure and a preparation method thereof, and the preparation method comprises the following steps:
(1) dissolving 10mmol of zinc acetate dihydrate in 20ml of dimethyl sulfoxide, dissolving 10mmol of tetramethylammonium hydroxide in 10ml of ethanol, dropwise adding the tetramethylammonium hydroxide solution into the zinc acetate solution, heating to 60 ℃, continuously stirring, and reacting for 1 hour;
(2) after 1 hour, the reaction was completed, and excess n-hexane was added to the above solution, followed by centrifugation to obtain ZnO precipitate, which was dried in the air and dissolved in ethanol. Obtaining ZnO nano-particle solution;
(3) taking 50ml of the ZnO nanoparticle solution with the concentration of 10mg/ml, then dropwise adding 10ml of sodium sulfide solution with the concentration of 0.1M inwards, and stirring for reacting for 1 hour;
(4) after 1 hour, 10ml of 0.1M zinc chloride solution is taken and dripped into the solution drop by drop, and the stirring reaction is continued for 1 hour;
(5) adding excessive n-hexane, centrifuging to obtain ZnO/ZnS nano-particle precipitate, namely the ZnO/ZnS electronic transmission material with the core-shell structure, and dissolving in ethanol after air drying to obtain a ZnO/ZnS nano-particle solution for later use.
Example 2
The embodiment provides a ZnO/ZnSe electron transport material with a core-shell structure and a preparation method thereof, and the preparation method comprises the following steps:
(1) dissolving 10mmol of zinc acetate dihydrate in 20ml of dimethyl sulfoxide, dissolving 10mmol of tetramethylammonium hydroxide in 10ml of ethanol, dropwise adding the tetramethylammonium hydroxide solution into the zinc acetate solution, heating to 60 ℃, continuously stirring, and reacting for 1 hour;
(2) after 1 hour, after the reaction is finished, adding excessive n-hexane into the solution, centrifuging to obtain ZnO precipitate, and dissolving in ethanol after air drying to obtain a ZnO nanoparticle solution;
(3) taking 50ml of the ZnO nanoparticle solution with the concentration of 10mg/ml, then dropwise adding 10ml of sodium selenite solution with the concentration of 0.1M into the ZnO nanoparticle solution, and stirring for reacting for 1 hour;
(6) after 1 hour, 10ml of 0.1M zinc chloride solution is taken and dripped into the solution drop by drop, and the stirring reaction is continued for 1 hour;
(7) adding excessive n-hexane, centrifuging to obtain ZnO/ZnSe nano-particle precipitate, namely the ZnO/ZnSe electron transport material with the core-shell structure, and dissolving in ethanol after air drying to obtain a ZnO/ZnS nano-particle solution for later use.
Example 3
This example provides a ZnO/SiO core-shell structure2The electron transport material and the preparation method thereof comprise the following steps:
(1) dissolving 10mmol of zinc acetate dihydrate in 20ml of dimethyl sulfoxide, dissolving 10mmol of tetramethylammonium hydroxide in 10ml of ethanol, dropwise adding the tetramethylammonium hydroxide solution into the zinc acetate solution, heating to 60 ℃, continuously stirring, and reacting for 1 hour;
(2) after 1 hour, after the reaction is finished, adding excessive n-hexane into the solution, centrifuging to obtain ZnO precipitate, and dissolving in ethanol after air drying to obtain a ZnO nanoparticle solution;
(3) taking 50ml of the ZnO nanoparticle solution with the concentration of 10mg/ml, carrying out ultrasonic treatment for 15min in an argon environment, adding 15ml of ammonia water solution, and carrying out ultrasonic treatment for 15min again;
(4) then, 10ml of ethyl orthosilicate-ethanol solution (the concentration is 3.6mmol/ml) is quickly injected into the mixed solution in the step (3), and the ultrasonic treatment is continued for 2 hours at the temperature of 32 ℃ to obtain black product solution;
(5) centrifuging the black solution at 10 deg.C at 15000 rpm for 30min to obtain ZnO/SiO2Precipitating, then adding BDissolving in alcohol to obtain ZnO/SiO2A nanoparticle solution.
Example 4
The present embodiment provides a quantum dot light emitting diode and a manufacturing method thereof, as shown in fig. 3, the steps are as follows:
(1) forming an anode 302 on a substrate 301, wherein the anode is a transparent conductive film ITO and has the thickness of 50 nm;
(2) PSS as a hole injection layer 303 with a thickness of 30nm was deposited on the anode 302 using a solution method;
(3) TFB was deposited as a hole transport layer 304 on the hole injection layer 303 using a solution method to a thickness of 30 nm;
(4) depositing CdSe/CdS on the hole transport layer 304 by a solution method to form a quantum dot light emitting layer 305 with the thickness of 25 nm;
(5) ZnO/ZnSe nano-particles prepared in the embodiment 2 are deposited on the quantum dot light-emitting layer 305 by a solution method to be used as an electron transport layer 306, and the thickness is 40 nm;
(6) al is deposited as a cathode 307 on the electron transport layer 306 by evaporation to a thickness of 120 nm.
Example 5
This example provides a quantum dot light emitting diode and a method of manufacturing the same, substantially as in example 4, except that an electron transport layer is made of the electron transport material prepared in example 3. The method comprises the following specific steps:
(1) forming an anode on a substrate, wherein the anode is a transparent conductive film ITO and has the thickness of 50 nm;
(2) PSS is used as a hole injection layer, and the thickness is 30 nm;
(3) depositing TFB on the hole injection layer by a solution method to serve as a hole transport layer, wherein the thickness of the TFB is 30 nm;
(4) depositing CdSe/CdS on the hole transport layer by a solution method to be used as a quantum dot light emitting layer, wherein the thickness of the CdSe/CdS is 25 nm;
(5) deposition of the ZnO/SiO from example 3 on a Quantum dot light emitting layer Using solution method2The nano particles are used as an electron transmission layer and have the thickness of 40 nm;
(6) al is deposited on the electron transport layer by an evaporation method to be used as a cathode, and the thickness is 120 nm.
Example 6
This example provides a quantum dot light emitting diode and a method for manufacturing the same, which are substantially the same as example 4 except that the electron transport layer is made of the ZnO nanoparticle solution prepared in step (2) of example 2. The method comprises the following specific steps:
(1) forming an anode on a substrate, wherein the anode is a transparent conductive film ITO and has the thickness of 50 nm;
(2) PSS is used as a hole injection layer, and the thickness is 30 nm;
(3) depositing TFB on the hole injection layer by a solution method to serve as a hole transport layer, wherein the thickness of the TFB is 30 nm;
(4) depositing CdSe/CdS on the hole transport layer by a solution method to be used as a quantum dot light emitting layer, wherein the thickness of the CdSe/CdS is 25 nm;
(5) depositing the ZnO nanoparticles prepared in the step (2) of the embodiment 2 on the quantum dot light-emitting layer by a solution method to form an electron transmission layer with the thickness of 40 nm;
(6) al is deposited on the electron transport layer by an evaporation method to be used as a cathode, and the thickness is 120 nm.
Performance testing
V (v) @10mA/cm was performed on the quantum dot light emitting diodes manufactured in examples 4 to 62Max. eqe and T90@1000cd/m2The test results are shown in table 1:
wherein, V (v) @10mA/cm2Shows that the current density of the device reaches 10mA/cm2The required voltage can reflect the impedance of the device, the impedance has important influence on the service life of the device, and if the impedance is too large, the service life of the device is reduced;
EQE represents the maximum external quantum efficiency of the device, wherein EQE is equal to the ratio of the number of photons emitted from the device to the number of electrons injected into the device, and can be generally calculated according to the J (current density) -V (voltage) -L (brightness) test data of the device and a related theoretical calculation formula; the EQE can reflect the efficiency of a light-emitting device for converting electric energy into light energy, and theoretically, the larger the EQE is, the better the EQE is;
T90@1000cd/m2is a commonly used parameter for measuring the lifetime of a device, and represents that the device has a lifetime of 1000cd/m2Is lit up for the initial luminance until the luminance decays to 90% of the initial luminance (here 900 cd/m)2) The time duration of the clock.
The above results show that, compared with the electron transport layer adopting the flat band structure in example 6, the electron current of the quantum dot light emitting diode is obviously reduced and the electron holes are more balanced when the electron transport layers adopting the electron quantum well energy level structures in examples 4 and 5 are adopted, wherein the electron transport is excessively hindered in example 5, and the charge balance of the QLED in example 4 is better; on the other hand, the electron transport materials adopted in the embodiments 4 and 5 greatly reduce the impurity energy levels such as defects and dangling bonds on the surface of the original metal oxide nanoparticles due to the coating of the shell layer, and are beneficial to stabilizing the working current of the quantum dot light emitting diode.
The technical features of the embodiments described above may be arbitrarily combined, and for the sake of brevity, all possible combinations of the technical features in the embodiments described above are not described, but should be considered as being within the scope of the present specification as long as there is no contradiction between the combinations of the technical features.
The above-mentioned embodiments only express several embodiments of the present invention, and the description thereof is more specific and detailed, but not construed as limiting the scope of the present invention. It should be noted that, for a person skilled in the art, several variations and modifications can be made without departing from the inventive concept, which falls within the scope of the present invention. Therefore, the protection scope of the present patent shall be subject to the appended claims.
Claims (12)
1. An electron transport material, wherein the structure of the electron transport material comprises a core and a shell;
the material of the inner core is metal oxide;
and the conduction band bottom energy level of the material of the shell layer is less than that of the material of the inner core.
2. The electron transport material of claim 1, wherein a top valence band energy level of the material of the shell layer is less than a top valence band energy level of the material of the core.
3. The electron transport material of claim 2, wherein the shell layer is made of one or more materials selected from ZnS, ZnSe, and ZnTe.
4. The electron transport material of claim 1, wherein a top valence band energy level of the material of the shell layer is greater than a top valence band energy level of the material of the core.
5. The electron transport material of claim 4, wherein the shell layer is made of a material selected from the group consisting of SiO2And Al2O3One or more of them.
6. The electron transport material of any of claims 1-5, wherein the material of the core is selected from the group consisting of ZnO, TiO, and mixtures thereof2And SnO2One or more of them.
7. The preparation method of the electron transport material is characterized by comprising the following steps of:
dissolving a metal source in a solvent, adding an alkaline solution, and reacting for 1-2h to obtain metal oxide nanoparticles;
coating the surface of the metal oxide nano particle with a shell layer material;
and the conduction band bottom energy level of the material of the shell layer is less than that of the metal oxide nano particles.
8. The method as set forth in claim 7, wherein the step of coating the material of the shell layer on the surface of the metal oxide nanoparticles comprises: and adding a shell material precursor into the metal oxide nano particles, and reacting for 1-4 h.
9. The preparation method according to claim 7 or 8, wherein the metal source is selected from one or more of a zinc source, a titanium source and a tin source; and/or the presence of a catalyst in the reaction mixture,
the solvent is selected from one or more of ethanol, isopropanol and dimethyl sulfoxide; and/or the presence of a catalyst in the reaction mixture,
the alkaline solution is selected from one or more of sodium hydroxide solution, potassium hydroxide solution and tetramethyl ammonium hydroxide solution.
10. A quantum dot light-emitting diode, wherein the material of the electron transport layer of the quantum dot light-emitting diode is the electron transport material according to any one of claims 1 to 6, or the electron transport material prepared by the preparation method according to any one of claims 7 to 9.
11. The quantum dot light-emitting diode of claim 10, wherein the quantum dot light-emitting diode further comprises an anode, a hole injection layer, a hole transport layer, a quantum dot light-emitting layer, and a cathode, wherein the hole injection layer is disposed on the anode, the hole transport layer is disposed on the hole injection layer, the quantum dot light-emitting layer is disposed on the hole transport layer, the electron transport layer is disposed on the quantum dot light-emitting layer, and the cathode is disposed on the electron transport layer.
12. The quantum dot light emitting diode of claim 10 or 11, wherein in the quantum dot light emitting layer, the quantum dots are selected from one or more of group II-VI compound semiconductors, group III-V compound semiconductors, group I-III-VI compound semiconductors, group IV elemental semiconductors, and perovskite quantum dots; and/or
The material of the hole transport layer is selected from an organic hole transport material or an inorganic hole transport material; and/or
The material of the hole injection layer is selected from a conductive polymer or a high work function n-type semiconductor.
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN113299866A (en) * | 2021-05-24 | 2021-08-24 | 合肥福纳科技有限公司 | Film layer and preparation method thereof, and light-emitting device and preparation method thereof |
| CN114284435A (en) * | 2021-12-14 | 2022-04-05 | 电子科技大学 | Low-dark-current organic multiplication type photoelectric detector and preparation method thereof |
| CN114300630A (en) * | 2021-12-24 | 2022-04-08 | 河南大学 | ZnO-based composite material, preparation method thereof and QLED device |
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| CN114300630B (en) * | 2021-12-24 | 2023-09-22 | 河南大学 | ZnO-based composite material, preparation method thereof and QLED device |
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