CN108011040B - Green light organic electroluminescent device - Google Patents
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Abstract
The invention discloses a green light organic electroluminescent device, which comprises a substrate, and a first electrode layer, a light-emitting layer and a second electrode layer which are sequentially formed on the substrate, wherein the light-emitting layer comprises a main material and a green phosphorescent dye, the main material is a thermal activation delayed fluorescent material and a hole type transmission material which are doped or undoped hole type transmission materials, and the mass ratio of the thermal activation delayed fluorescent material to the hole type transmission material is (0.1-100%): (99.9-0%), and the doping ratio of the green phosphorescent dye in the luminescent layer is 0.5-10 wt%. The invention adopts
Energy transfer can reduce triplet-triplet annihilation (TTA), improve exciton utilization rate, and further improve device efficiency and service life, △ E of the inventionSTSmall (<0.3eV), the electron acceptor has good stability, small torsion angle between the acceptor and the donor, high radiation transition rate and singlet S of a thermal activation delayed fluorescence material (TADF)1Singlet S than normal host1And the driving voltage of the device is effectively reduced.
Description
Technical Field
The invention relates to the technical field of organic electroluminescent devices, in particular to a green organic electroluminescent device adopting a thermal activation delayed fluorescent material and a hole type transmission material as luminescent main materials.
Background
Through the development of the last thirty years, Organic electroluminescent devices (called Organic L light emitting devices for short as O L ED) have the advantages of wide color gamut, fast response, wide viewing angle, no pollution, high contrast, planarization and the like as the next generation of lighting and display technologies, and have been applied to lighting and display to a certain extent.
An organic electroluminescent device generally includes a cathode, a light emitting layer including a light emitting host material and a light emitting dye, and an anode, as shown in fig. 1, and under an electro-excitation condition, the organic electroluminescent device may generate 25% of singlet excitons and 75% of triplet excitons. The conventional fluorescent material can only utilize 25% of singlet excitons due to spin forbidden resistance, so that the external quantum efficiency is only limited within 5%, almost all triplet excitons can only be lost in the form of heat, and in order to improve the efficiency of the organic electroluminescent device, the triplet excitons must be fully utilized.
In order to utilize triplet excitons, researchers have proposed a number of approaches, most notably the use of phosphorescent materials. The phosphorescent material introduces heavy atoms and has a spin-orbit coupling effect, so 75% of triplet state can be fully utilized, and 100% of internal quantum efficiency is realized. This problem can be solved well if the fluorescent device can make good use of triplet excitons. Researchers have proposed using triplet quenching to generate singlet states in fluorescent devices to improve the efficiency of fluorescent devices, but this approach has been theorized to achieve maximum external quantum efficiencies of only 62.5%, much lower than phosphorescent materials. Therefore, it is necessary to find a new technology to fully utilize the triplet level of the fluorescent material to improve the luminous efficiency.
Adachi et al, Kyushu university of Japan, proposed a new approach to achieving high-efficiency fluorescence O L ED, a Thermally Activated Delayed Fluorescence (TADF) material, whose singlet-triplet energy gap (. DELTA.E)ST) Very small, non-luminescent triplet excitons may be upconverted to singlet excitons which may emit light under the influence of ambient heat. However, the materials are directly used as a luminescent layer, so that the device is far from the practical level, the efficiency is not high enough, the service life is short, and the roll-off is serious.
Zhang Dongdong, Duan L ian, Qiu Yong, JMCC,2014,2(42),8983-8989 this document shows that the device of thermally activated sensitized phosphorescence has a higher efficiency at a lower doping concentration, such as 5 wt%, but the efficiency of the conventional phosphorescent device using CBP as the host is significantly reduced.
Disclosure of Invention
Therefore, the technical problem to be solved by the present invention is to provide a green organic electroluminescent device, which uses the thermal activation delayed fluorescent material as the host material and utilizes the thermal activation delayed fluorescent material as the host material, thereby solving the problems of low energy, high doping concentration and high cost of the green O L ED luminescent layer in the prior art
The energy transfer mode reduces the doping concentration of the dye, and further improves the service life and the efficiency of the device.
In order to solve the technical problems, the invention adopts the following technical scheme: a green organic electroluminescent device comprises a substrate, and a first electrode layer, a light emitting layer and a second electrode layer sequentially formed on the substrate,
the luminescent layer comprises a host material and a green phosphorescent dye, the host material is a thermal activation delayed fluorescent material doped or undoped with a hole type transport material, and the mass ratio of the thermal activation delayed fluorescent material to the hole type transport material (0.1-100%): (99.9-0%); preferably (15-80%): (85-20%).
The thermal activation delayed fluorescence material is a mono-benzonitrile compound with a structure shown in a formula (I):
wherein R is1～R5Are the same or different, and R1～R5At most two of which are H, the others being electron donating groups.
The doping proportion of the green phosphorescent dye in the luminescent layer is 0.5-10 wt%.
The electron group is selected from one of the structural compounds shown in the formulas 1-1 to 1-13:
wherein, R in the formula 1-16And R7Is the same as orAnd the groups are respectively selected from hydrogen radical, methyl, tertiary butyl, methoxy, phenyl and substituted or unsubstituted carbazolyl electron donating groups.
The heat-activated delayed fluorescence material is selected from one of structural compounds shown in formulas 2-1 to 2-14:
the hole-type transport material is (N, N '-di-1-naphthyl) -N, N' -diphenyl-1, 1 '-biphenyl-4, 4' -diamine, N '-diphenyl-N, N' -bis (m-methylphenyl) -1, 1 '-biphenyl-4, 4' -diamine, 4 '-cyclohexylbis [ N, N-bis (4-methylphenyl) ] aniline, 4' -N, N '-dicarbazole-biphenyl, 4',4 ″ -tris (carbazol-9-yl) triphenylamine or 1, 3-dicarbazole-9-ylbenzene.
The green phosphorescent dye is one or more of metal complexes containing Ir, Eu and Os.
The green phosphorescent dye is one or more of Ir-containing metal complexes.
The green phosphorescent dye is Ir (mppy)3、p-PF-py、Ir(pbi)2(acac) and Ir (nbi)2(acac) one or a mixture of several thereof:
a first organic functional layer is arranged between the first electrode layer and the light-emitting layer, and a second organic functional layer is arranged between the light-emitting layer and the second electrode layer.
The first organic functional layer is a hole injection layer and/or a hole transport layer, and the second organic functional layer is an electron transport layer and/or an electron injection layer.
The thickness of the light-emitting layer is 5-50 nm.
Compared with the prior art, the technical scheme of the invention has the following advantages:
the invention provides a green light organic electroluminescent device which comprises a substrate, and a first electrode layer, a light-emitting layer and a second electrode layer which are sequentially formed on the substrate, wherein the light-emitting layer comprises a light-emitting main material and a green phosphorescent dye, and the light-emitting main material comprises a thermal activation delayed fluorescent material and a hole type transmission material. The thermal activation delayed fluorescence material used in the invention is a bipolar material, and is mainly characterized in that the electron transport capacity is higher than the hole transport capacity, namely the partial electron type bipolar material. The heat-activated delayed fluorescent material provided by the invention provides energy conversion, the phosphorescent dye is a luminescent material, the full utilization of triplet state energy is ensured, the efficiency is improved, the problem of roll-off under high brightness is reduced, and the service life of the device is prolonged.
Preferably, in order to ensure that the carriers reach balance in the light-emitting layer, the invention preferably adopts a thermal activation delayed fluorescence material doped with a hole type transport material as a light-emitting layer host material, so that energy conversion and light emission can occur on different materials, and the mass ratio of the two materials is preferably (15-80%): (85-20%). The energy transfer process of the thermal activation sensitized phosphorescent device is shown in figure 2, and 75% of excitons of the host material in the first triplet state are rapidly transferred to the first singlet state through intersystem crossing and pass through a long range
Energy is transferred to the first triplet state of the dye, and long-range transfer of energy is beneficial to reducing the doping concentration of the dye. The doping proportion of the green phosphorescent dye in the luminescent layer is only 0.5-5 wt%, so that the manufacturing cost is further reduced, the efficiency and the service life of the device are improved, and the effects of high efficiency, low voltage and long service life of the device can be realized. The traditional host sensitized phosphorescent device is easy to cause the efficiency attenuation of the device due to the over-high concentration of the dye.
In addition, the invention adopts
Energy transfer can reduce triplet-triplet annihilation (TTA), improve exciton utilization rate, and further improve device efficiency and service life. First excited singlet S of the invention1And the difference T between the first excited triplet state1Very small (△ E)ST<0.3eV), the electron acceptor has good stability, the torsion angle between the acceptor and the donor is small, and the radiation transition rate is high; singlet state S of thermally activated delayed fluorescence materials (TADF)1Singlet S than normal host1And the driving voltage of the device can be effectively reduced.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, and it is obvious that the drawings in the following description are some embodiments of the present invention, and other drawings can be obtained by those skilled in the art without creative efforts.
FIG. 1 is a prior art energy transfer diagram of a light emitting layer;
FIG. 2 is a diagram showing energy transfer of a light emitting layer of the green organic electroluminescent device according to the present invention;
fig. 3 is a schematic structural diagram of the green organic electroluminescent device of the present invention.
Detailed Description
The invention will now be further described by means of specific examples.
In order to make the objects, technical solutions and advantages of the present invention more apparent, embodiments of the present invention will be described in detail with reference to the accompanying drawings. This invention may be embodied in many different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the concept of the invention to those skilled in the art. It will be understood that when an element such as a layer, region or substrate is referred to as being "formed on" or "disposed on" another element, it can be directly on the other element or intervening elements may also be present. In contrast, when an element is referred to as being "directly formed on" or "directly disposed on" another element, there are no intervening elements present.
As shown in fig. 3, the green organic electroluminescent device provided by the present invention includes a substrate, and a first electrode layer 01, a light emitting layer 04, and a second electrode layer 07 sequentially formed on the substrate, wherein a first organic functional layer is disposed between the first electrode layer 01 and the light emitting layer 04, and a second organic functional layer is disposed between the light emitting layer 04 and the second electrode layer 07. The first organic functional layer is a hole injection layer 02 and/or a hole transport layer 03, and the second organic functional layer is an electron transport layer 05 and/or an electron injection layer 06. The thickness of the light emitting layer 04 is 5-50 nm.
The luminescent layer comprises a host material and a green phosphorescent dye, the host material is a thermal activation delayed fluorescent material doped or undoped with a hole type transport material, and the mass ratio of the thermal activation delayed fluorescent material to the hole type transport material is (0.1-100%): (99.9-0%); preferably (15-80%): (85-20%).
The thermal activation delayed fluorescence material is a mono-benzonitrile compound with a structure shown in a formula (I):
wherein R1 to R5 are the same or different, and R1～R5At most two of which are H, the others being electron donating groups.
The doping proportion of the green phosphorescent dye in the luminescent layer is 0.5-10 wt%.
The electron-donating group is selected from one of structural compounds shown in formulas 1-1 to 1-13:
wherein, R in the formula 1-16And R7The same or different, are respectively selected from hydrogen radical, methyl, tertiary butyl, methoxy, phenyl, substituted or unsubstituted carbazolyl and electron donating group.
The heat-activated delayed fluorescence material is selected from one of structural compounds shown in formulas 2-1 to 2-14:
the hole transport material is (N, N '-di-1-naphthyl) -N, N' -diphenyl-1, 1 '-biphenyl-4, 4' -diamine, N '-diphenyl-N, N' -bis (m-methylphenyl) -1, 1 '-biphenyl-4, 4' -diamine, 4 '-cyclohexylbis [ N, N-bis (4-methylphenyl) ] aniline, 4' -N, N '-dicarbazole-biphenyl, 4' -tris (carbazol-9-yl) triphenylamine or 1, 3-dicarbazole-9-ylbenzene, wherein the structural formula of the hole transport material is shown in Table 1.
The green phosphorescent dye is one or more of metal complexes containing Ir, Eu and Os.
The green phosphorescent dye is one or more of Ir-containing metal complexes.
The green phosphorescent dye is Ir (mppy)3、p-PF-py、Ir(pbi)2(acac) and Ir (nbi)2(acac) one or a mixture of several thereof:
TABLE 1 abbreviated names and corresponding structural formulae of hole-type transport materials
The substrate may be glass or a flexible substrate, and the flexible substrate may be made of a compound material of polyester, polyimide or a thin metal sheet. The lamination and encapsulation may be by any suitable method known to those skilled in the art.
The first electrode layer (anode) 01 may employ an inorganic material or an organic conductive polymer. The inorganic material is generally a metal oxide such as Indium Tin Oxide (ITO), zinc oxide (ZnO), Indium Zinc Oxide (IZO), or a metal having a high work function such as gold, copper, or silver, and preferably ITO; the organic conductive polymer is preferably one of polythiophene/sodium polyvinylbenzenesulfonate (hereinafter abbreviated as PEDOT/PSS) and polyaniline (hereinafter abbreviated as PANI).
The second electrode layer (cathode) 07 is generally formed by using a metal having a low work function such as lithium, magnesium, calcium, strontium, aluminum, indium, an alloy of these with copper, gold, silver, or a metal and a metal fluoride alternately, and the cathode 07 is preferably formed by stacking an L iF layer and an Al layer (L iF layer on the outer side).
The material of the hole transport layer 03 may be selected from arylamine-based and oligomer-based low molecular materials, preferably NPB.
The material of the electron transport layer 05 may be an organometallic complex (e.g., Alq)3、Gaq3BAlq or Ga (Saph-q)) or other materials commonly used for the electron transport layer 05, such as aromatic condensed rings (e.g. pentacene, perylene) or phenanthrolines (e.g. Bphen, BCP) compounds.
The hole injection layer 02 may be made of, for example, 4',4 ″ -tris (3-methylphenylaniline) -triphenylamine doped F4TCNQ, or copper phthalocyanine (CuPc), or may be a metal oxide such as molybdenum oxide or rhenium oxide.
The thicknesses of the various layers described above may be those conventional in the art.
Example 1
As shown in fig. 3, the green organic electroluminescent device provided by the present invention includes a substrate, and a first electrode layer 01, a light emitting layer 04, and a second electrode layer 07 sequentially formed on the substrate, wherein a first organic functional layer is disposed between the first electrode layer 01 and the light emitting layer 04, and a second organic functional layer is disposed between the light emitting layer 04 and the second electrode layer 07. The first organic functional layer is a hole injection layer 02 and/or a hole transport layer 03, and the second organic functional layer is an electron transport layer 05 and/or an electron injection layer 06.
The light-emitting main material of the device of the embodiment is a thermal activation delayed fluorescent material and a hole type transport material which are doped or undoped with the hole type transport material, and the mass ratio of the thermal activation delayed fluorescent material to the hole type transport material is (0.1-100%): (99.9-0%) the dye is a green phosphorescent dye.
Device 1: ITO/NPB (40nm)/TCTA (10 nm)/formula 2-1: 5 wt% Ir (ppy)2(acac)(20n m)/Bphen(40nm)/LiF(5nm)/Al
The device 1 uses ITO (indium tin oxide) as an anode; NPB is used as a hole injection layer; TCTA is used as a hole transport layer; the host material used in the light-emitting layer 06 is a compound of formula (I) of the present invention, Ir (ppy)2The mass percentage of the (acac) dye doped in the light-emitting layer was 5 wt%, Bphen was used as the electron transport layer, and L i (5nm)/Al was used as the cathode.
Comparative example 1:
the structure of this comparative example is the same as that of example 1, except that the host material used only in the light-emitting layer 04 is different, the structure of this comparative example using CBP as the light-emitting host material is as follows, and the performance of both devices is tested as shown in table 2.
ITO/NPB(40nm)/TCTA(10nm)/CBP：5wt％Ir(ppy)2(acac)(20nm)/Bphen(40nm)/LiF(5nm)/Al
Table 2 results of performance test of example 1 and comparative example 1
As can be seen from the above table: the green light phosphorescence organic electroluminescent device adopts the new thermal activation sensitized fluorescent material as the main body, the current efficiency of the thermal activation sensitized fluorescent material device is higher than that of the device of the common main body sensitized phosphorescent material, and the voltage is the lowest, which shows that the Delta E of the thermal activation sensitized fluorescent material used by the main body material of the inventionSTVery small (<0.3eV), has a high coefficient of intersystem crossing (k)RISC) Further shorten the lifetime of triplet excitons, and
energy transfer can reduce triplet-triplet annihilation (TTA), improve exciton utilization rate, and further improve device efficiency and service life.
Example 2
The device 2 to device 5 light emitting devices have the same structure as the device 1 light emitting device except for the difference in the doping concentration of the green phosphorescent dye. The structure is as follows:
ITO/NPB (40nm)/TCTA (10 nm)/formula 2-1: 0.5 to 5 wt% Ir (ppy)2(acac)(20nm)/Bp hen(40nm)/LiF(5nm)/Al
Table 3 performance test results for devices 2 through 5
Device 2 to device 5 the performance of the light emitting devices was tested at 5000cd/m as shown in Table 32At brightness, as the doping concentration of the dye increases, the current efficiency of the device also increases, because of the long range
Energy transfer improves exciton utilization and thus device efficiency.
Example 3
Device 6 to device 10 the light emitting device is the same in structure as the light emitting device of embodiment 1 except that the host material of the light emitting layer 06 is different. The structure is as follows:
ITO/NPB (40nm)/TCTA (10 nm)/host material: 3 wt% Ir (ppy)2(acac)(20nm)/Bp hen(40nm)/LiF(5nm)/Al
Table 4 performance test results for devices 6 through 10
Device 6 to device 10 the performance of the light emitting devices was tested at 5000cd/m as shown in Table 42Under the brightness, different thermal activation delayed fluorescence materials and different hole type transport materials are subjected to co-evaporation, although the doping proportion is different, the device performance shows low driving voltage and high efficiency, and the thermal activation delayed fluorescence protected by the invention is shown as follows: the main body material formed by the hole type transmission material has universality, and all devices of the main body material have high-efficiency performance and can reduce the driving voltage of the devices.
Example 4
Device 11 to device 15 the light emitting device was the same in structure as the light emitting device of example 1 except that the light emitting layer 06 was different in material as shown in table 5, and the performance of the devices 11 to 18 was tested as shown in table 6.
ITO/NPB (40nm)/TCTA (10 nm)/host material
TABLE 5 structures of device 11 through device 18 light emitting materials
Table 6 performance test results for devices 11 through 18
Device 11 to device 18 the performance of the light emitting devices was tested at 5000cd/m as shown in Table 62Under the brightness, the main materials are different thermal activation delayed fluorescence materials and different hole type transmission materials, the luminescent material is a phosphorescent material with various concentrations for common evaporation, the current carriers in the luminescent layer are balanced by adjusting the doping proportion of the hole transmission materials, and the device performance shows low driving voltage and high efficiency, which shows that the thermal activation delayed fluorescence protected by the invention: the main body material formed by the hole type transmission material has universality, and all devices of the main body material have high-efficiency performance and can reduce the driving voltage of the devices.
It should be understood that the above examples are only for clarity of illustration and are not intended to limit the embodiments. Other variations and modifications will be apparent to persons skilled in the art in light of the above description. And are neither required nor exhaustive of all embodiments. And obvious variations or modifications therefrom are within the scope of the invention.
Claims (8)
1. A green organic electroluminescent device comprising a substrate, and a first electrode layer, a light-emitting layer and a second electrode layer formed on the substrate in this order,
the light-emitting layer comprises a host material and a green phosphorescent dye, the host material is a thermal activation delayed fluorescent material doped or undoped with a hole type transport material, when the host material is doped with the hole type transport material, the mass ratio of the thermal activation delayed fluorescent material to the hole type transport material is (15-80%) (85-20%), and the thermal activation delayed fluorescent material is △ EST<0.3eV；
The thermal activation delayed fluorescence material is a mono-benzonitrile compound with a structure shown in a formula (I):
wherein R is1～R5Are the same or different, and R1～R5At most two of the total number of the carbon atoms are H, and the rest are electron donating groups;
the electron donating group is selected from one of the following compounds:
wherein, R in the formula 1-16And R7Identical or different, are respectively selected from methoxy and phenyl.
2. The green organic electroluminescent device according to claim 1, wherein: the doping proportion of the green phosphorescent dye in the luminescent layer is 0.5-10 wt%.
3. The green organic electroluminescent device according to claim 1, wherein:
the heat-activated delayed fluorescence material is selected from one of the compounds with the following structures:
4. the green organic electroluminescent device according to claim 3, wherein the green phosphorescent dye is one or more of Ir, Eu and Os containing metal complexes.
5. The green organic electroluminescent device according to claim 4, wherein the green phosphorescent dye is one or more of Ir-containing metal complexes.
6. The green organic electroluminescent device according to claim 4, wherein the green phosphorescent dye is Ir (mppy)3、p-PF-py、Ir(pbi)2(acac) and Ir (nbi)2(acac) one or a mixture of several thereof:
7. the green organic electroluminescent device according to claim 6, wherein a first organic functional layer is disposed between the first electrode layer and the light-emitting layer, and a second organic functional layer is disposed between the light-emitting layer and the second electrode layer;
the first organic functional layer is a hole injection layer and/or a hole transport layer, and the second organic functional layer is an electron transport layer and/or an electron injection layer.
8. The green organic electroluminescent device according to claim 7, wherein the thickness of the light emitting layer is 5 to 50 nm.
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| CN112289942B (en) * | 2020-10-30 | 2022-11-29 | 苏州大学 | Doped electronic device based on green thermal activation delayed fluorescent material and preparation method thereof |
| CN112679414B (en) * | 2020-10-30 | 2022-07-19 | 苏州大学 | Super-thick non-doped electroluminescent device based on thermal activation delayed fluorescent material and preparation method thereof |
| CN112300056A (en) * | 2020-10-30 | 2021-02-02 | 苏州大学 | Green thermal activation delayed fluorescent material and preparation method thereof |
| WO2022088111A1 (en) * | 2020-10-30 | 2022-05-05 | 苏州大学 | Super-thick non-doped electroluminescent device based on thermally activated delayed fluorescent material, and production method therefor |
| WO2022088113A1 (en) * | 2020-10-30 | 2022-05-05 | 苏州大学 | Doped electronic device based on green thermally activated delayed fluorescence material, and manufacturing method therefor |
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