CN100495761C - Organic electro-white light device and producing method thereof - Google Patents

Organic electro-white light device and producing method thereof Download PDF

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CN100495761C
CN100495761C CNB200410046156XA CN200410046156A CN100495761C CN 100495761 C CN100495761 C CN 100495761C CN B200410046156X A CNB200410046156X A CN B200410046156XA CN 200410046156 A CN200410046156 A CN 200410046156A CN 100495761 C CN100495761 C CN 100495761C
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white light
organic electroluminescent
light device
organic
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CN1585580A (en
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邱勇
雷钢铁
王立铎
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Tsinghua University
Beijing Visionox Technology Co Ltd
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Tsinghua University
Beijing Visionox Technology Co Ltd
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Abstract

The invention consists of transparent base plate, anode layer and organic functional layer. The light emitting layer in organic functional layer comprises main body material, blue phosphorescence fluorochrome. The doping concentration of phosphorescence fluorochrome is: 1-20wt%. The doping concentration of fluorochrome is 0.05-1wt%. Due to increasing the utilization of fluorochrome, high efficiency red fluorescence is obtained. Combining blue fluorescence emitted from fluorochrome the high efficiency phosphor photo- activation fluorescence white light device is obtained.

Description

A kind of organic electroluminescent white light device and preparation method thereof
Technical field
The present invention relates to a kind of organic electroluminescent white light device, also relate to this preparation of devices method, belong to technical field of organic electroluminescence.
Background technology
Now, along with the arriving of Development of Multimedia Technology and information-intensive society, more and more higher to the flat-panel monitor performance demands.In recent years emerging three kinds of Display Techniques: plasma display, Field Emission Display and display of organic electroluminescence have all remedied the deficiency of cathode ray tube and LCD to a certain extent.Wherein, display of organic electroluminescence has from main light emission, low-voltage DC driven, complete curings, wide visual angle, color and a series of advantage such as enriches, compare with LCD, display of organic electroluminescence does not need backlight, and the visual angle is big, and power is low, its response speed can reach 1000 times of LCD, its manufacturing cost but is lower than the LCD of equal resolution, and therefore, display of organic electroluminescence has broad application prospects.
Display of organic electroluminescence (claims Organic Light Emitting Diode again, organic light emitting diode, OLED) research starts from the sixties in 20th century, people such as Pope (Pope M, Kallmann HP, and Magnante P.J.CHEM.PHYS., 1963,38,2042) reported first the electro optical phenomenon of anthracene single crystal, opened the electroluminescent prelude of organic solid.1987, (C.W.Tang such as the researcher C.W.Tang of Kodak, S.A.Vanslyke, Appl.Phys.Lett., 1987,51,913) on the basis of summing up previous work, propose double-deck design philosophy, selected to have the derivative of tri-arylamine group and the oxine aluminum complex (Alq of better filming performance 3) respectively as hole transmission layer and luminescent layer (electron transfer layer of holding concurrently), obtained high-quantum efficiency (1%), high-luminous-efficiency (1.5lm/W), high brightness (〉 1000cd/m 2) and low driving voltage (<10V) organic electroluminescence device; Nineteen ninety, (Burroughes JH such as the breadboard R.H.Friend of the Cavendish of Cambridge University, Bradley DDC, Brown AR, R.H.Friend.Nature (London), 1990,347,539) be that the luminescent layer material has been made polymer electroluminescent device with poly-phenylene vinylene (ppv) (PPV), opened up another frontier of luminescent device---thin polymer film electroluminescent device.These two breakthroughs make people see the potential hope of organic electroluminescence device as flat-panel display device of new generation.
The flat-panel monitor of full color, large tracts of land, high information quantity is one of most important target of OLED development.Along with reaching its maturity of the luminous demonstration of monochrome, the research of full-color display spare also is surging forward.Full-colour image shows needs to obtain continuously adjustable color in visible wavelength range, and organic electroluminescent realizes that the colored method that shows has following several at present:
A, prepare the trichromatic luminescence center of red, green, blue (being RGB) respectively, the luminous intensity of regulating three kinds of colors then is to realize different color combination.
The device that b, preparation emit white light obtains three primary colors by the colour filter film then, realizes colored the demonstration thereby reconfigure three primary colors.
The device of c, preparation blue light-emitting obtains ruddiness and green glow respectively by blue-light excited other luminescent material then, thereby further obtains colored the demonstration.
D, with red, green, blue luminescent device vertical stack, thereby realize colored the demonstration.
In said method, the technology in the method d preparation process is very complicated.Although the full color device existing procucts based on method a come out, accurate pixel preparation needs high-quality vaporization coating template, brings the difficulty of accurate contraposition thus, makes that resolution is difficult to improve.Method b, c do not need accurate pixel contraposition, and c compares with method, and method b biggest advantage is directly to use the colored filter of liquid crystal display (LCD).Therefore, people turn to sight white light to add the scheme of colour filter film one after another recently, and the high efficiency white light parts becomes a research focus in OLED field.
White organic electroluminescent research is because of its application prospects develops very fast.For fluorescent device, existing at present high-high brightness has surpassed 50000cd/m 2Report (Cheon K.O, Shinar J.APPL.PHYS.LETT., 2002,81,1738), the fluorescent lamp (~3000cd/m that uses considerably beyond general lighting 2); But this device maximum power efficiency is 4.1lm/W (corresponding external quantum efficiency~3%), is lower than the requirement (under the illumination of 1000lm, energy efficiency surpasses 30lm/W) of flat-plate light source, and therefore raising the efficiency is one of main goal in research of organic electroluminescent.
Minimum energy excitation state in the organic solid is divided into singlet and triplet state, and the latter causes phosphorescent emissions.Phosphorescence is another important kind of excitation state radiation transistion, the energy that is discharged when being the excited state molecule inactivation to the different low-energy state of multiplicity.Common observed phosphorescence all is from the first excited triplet state (T 1) radiation that when ground state transition, discharged.According to the spin statistical estimation, under electric shooting condition, the probability that hole and electronics are combined into singlet and triplet excitons is respectively 25% and 75%.For fluorescent material, it can only pass through singlet---and the mode that the singlet energy shifts forms singlet exciton, thereby is 25% by the highest internal quantum efficiency of the device of singlet luminescent material preparation.In the practical application, because the influence of factors such as device interfaces refraction utilizes the external quantum efficiency of the organic electroluminescence device of fluorescent material preparation to be up to 5%.And for some phosphor material, it can pass through triplet state---and the mode that triplet energy state shifts is utilized the triplet excitons of formation, can pass through singlet again---singlet energy shift mode then through singlet---intersystem crossing of triplet state utilizes the singlet exciton of formation, thereby the highest internal quantum efficiency of the device of being made up of phosphor material can reach 100%, external quantum efficiency can be four times of (Baldo MA of fluorescent material device in theory, O ' Brien DF, YouY, et al.NATURE, 1998,395,151).
Recently, there are some researches show, in the micromolecule device, use organic phosphorescent complexes of heavy metals such as Pt or Ir can obtain 100% internal quantum efficiency nearly, these so-called electroluminescent phosphorescence OLEDs (Electrophosphorescent OLEDs, PHOLEDs) having proved can be luminous at visible region, and by the emission of direct triplet state or between phosphorescent molecules, form the triplet state excimer and prepare efficient white light OLED device.At present, the green electroluminescent device power efficiency luminous based on triplet state reached 80lm/W, and corresponding external quantum efficiency surpasses 20%, and internal quantum efficiency is near 100%.(Fukase?A,Dao?KLT,Kido?J.POLYM?ADVAN?TECHNOL,2002,13,601)。
Another approach that realizes 100% internal quantum efficiency is to adopt phosphor-sensitized fluorescent (Baldo MA, Thompson ME, Forrest SR.NATURE, 1998,403,750).Baldo etc. studies show that, mix phosphorescence sensitizer and fluorescent dye in matrix, and matrix can pass to triplet energy state phosphorescence sensitizer (T 1 *→ T 2 *), sensitizer is given luminescent dye molecule (T with energy delivery again 2 *→ S 3 *), last fluorescent dye is luminous with the fluorescence form.The related work of phosphor-sensitized fluorescent has caused people's extensive concern, because at room temperature the organic compound that can phosphoresce from triplet state effectively is very few for number, the compound that can effectively send fluorescence on the contrary is then strong in number, and phosphor-sensitized fluorescent provides material range of choice widely; And in this luminescence process, not existing triplet state-triplet state to bury in oblivion phenomenon, this has just been avoided the device phenomenon that efficient can descend rapidly under big electric current.
The selection of phosphorescence sensitizer, very crucial for realizing high efficiency sensitized fluorescence.In the phosphor-sensitized fluorescent system,, realize the fluorescent emission of 100% internal quantum efficiency by " multistage waterfall type " energy delivery (cascade).This requires the energy of matrix to be higher than the energy of phosphorescence sensitizer usually, and the energy of phosphorescence sensitizer is higher than the energy of fluorescent dye, this has limited the application of phosphor-sensitized fluorescent to a certain extent, the phosphor-sensitized fluorescent system of report all adopts green phosphorescent dye and red fluorescence dyestuff at present, finally realizes red fluorescence (Kawamura Y, Yanagida S efficiently, Forrest SR.J.APPL.PHYS., 2002,92,87).
(Gang Cheng, Feng Li, et al.APPL.PHYS.LETT., 2003,82,4224) such as Gang Cheng with CBP as host, doping Ir (ppy) 3With 2% DCJTB, Ir (ppy) wherein 3As sensitizer, sensitization DCJTB sends orange-red light, mixes the blue light that NPB (simultaneously as hole transmission layer) sends and obtains white light.By regulating Ir (ppy) 3Concentration and the thickness of CBP layer regulate luminous intensity and colorimetric purity.At 4%Ir (ppy) 3During with the CBP layer of 18nm, high-high brightness and efficient are respectively 11200cd/m 2And 6.8cd/A.
From the existing result who utilizes phosphor-sensitized fluorescent to obtain white light, generally all be to take green phosphorescent dye sensitization red fluorescence dyestuff, mix blue-fluorescence again and obtain white light.By aforementioned content as can be known, generally speaking, the luminous efficiency of fluorescence is lower than phosphorescence.So the white light that obtains in this way, its efficient is not high relatively.
Summary of the invention
The purpose of this invention is to provide that a kind of luminous efficiency height, brightness are big, the organic electroluminescent white light device of good stability.
Another object of the present invention provides a kind of preparation method of organic electroluminescent white light device.
For achieving the above object, a technical scheme of the present invention provides a kind of organic electroluminescent white light device, this device architecture comprises transparent substrate, anode layer, organic function layer and cathode layer successively, comprise luminescent layer in the organic function layer, comprise material of main part, blue phosphorescent dyestuff and red fluorescence dyestuff in the luminescent layer.
The average doping content of the phosphorescent coloring in organic electroluminescent white light device of the present invention is 1~20wt%.
The average doping content of the fluorescent dye in organic electroluminescent white light device of the present invention is 0.05~1wt%.
Luminescent layer material of main part in the organic electroluminescent white light device of the present invention is a kind of material in carbazoles, the compound of fluorene class.Comprise polyvinylcarbazole, 4,4 '-N, N '-two carbazoles-biphenyl, N, N '-two carbazyl-1,4-dimethylene benzene or 9, compounds such as 9-two (4-two carbazoles-phenyl) fluorenes.
Blue phosphorescent dyestuff in the organic electroluminescent white light device of the present invention is a metal organic complex, comprises two [2-(4, the 6-difluorophenyl) pyridine radicals-N, C 2 '] picolinic acid iridium (III), two (4 ', 6 '-difluorophenyl pyridine radicals) four (1-pyrazoles) boryl iridium (III), (2-(4 ', 6 '-difluorophenyl) pyridine radicals-N, C 2 ') acetylacetone based platinum (II).
Red fluorescence dyestuff in the organic electroluminescent white light device of the present invention comprises 4-methylene dicyanoethyl-2-methyl-6-(p-dimethylamino styryl)-4H-pyrans, the 4-4-dicyano methylene-2-tert-butyl group-6-(1,1,7,7-tetramethyl-julolidine-9-vinyl)-4H-pyrans and 5,6,11,12-tetraphenyl aphthacene.
Can comprise electron transfer layer in the organic function layer in the organic electroluminescent white light device of the present invention.
Can comprise electron transfer layer and hole transmission layer in the organic function layer in the organic electroluminescent white light device of the present invention.
Can comprise electron transfer layer, hole transmission layer and resilient coating in the organic function layer in the organic electroluminescent white light device of the present invention.Wherein comprise hole injection layer in the resilient coating, hole transmission layer adopts a kind of material in the triphenylamine compounds.The triphenylamine compounds comprises N, N '-two-(1-naphthyl)-N, N '-diphenyl-1,1 '-xenyl-4,4 '-diamines, N, N '-diphenyl-N, N '-two (aminomethyl phenyl)-1,1 '-xenyl-4,4 '-diamines or 4,4 ', 4 " three (3-aminomethyl phenyl aniline) triphenylamines.
Electron transfer layer in the organic electroluminescent white light device of the present invention adopts a kind of material in metal organic complex, aromatic condensed ring class, the o-phenanthroline Lei Huo oxadiazole compounds.Wherein metal organic complex comprises that three (oxine) aluminium, two (2-methyl-8-quinolyl)-4-phenylphenol aluminium (III), three (oxine) gallium, (the adjacent amine phenol of salicylidene)-(8-oxyquinoline) close aluminium (III) or (the adjacent amine phenol of salicylidene)-(8-oxyquinoline) closes gallium (III).Wherein the aromatic condensed ring compounds comprises pentacene Huo perylene, wherein the o-phenanthroline compounds comprises 4,7-diphenyl-1,10-o-phenanthroline or 2,9-dimethyl-4,7-diphenyl-1, the 10-o-phenanthroline, Suo Shu De oxadiazole compounds comprises 2-(4-t-butyl-phenyl)-5-(4-xenyl)-1,3,4-oxadiazole.
Hole injection layer in the organic electroluminescent white light device of the present invention is polymeric material or is inorganic material.Polymeric material is a kind of in polytetrafluoroethylene, polyimides, polymethyl methacrylate or the polyethylene terephthalate, and inorganic material is SiO 2, TiO 2Or LiF.
Another technical scheme of the present invention provides a kind of preparation method of organic electroluminescent white light device, and this method may further comprise the steps:
1. successively transparent conduction base sheet is carried out ultrasonic cleaning, oven dry, preliminary treatment, wherein the conducting film above the conductive substrate is as the anode layer of device;
2. place in the vacuum chamber with above-mentioned cleaning, drying and through pretreated transparent conduction base sheet, vacuumize, then evaporation hole transmission layer on above-mentioned conducting film;
3. keep above-mentioned vacuum chamber internal pressure constant, on above-mentioned hole transmission layer, continue the organic luminous layer that evaporation is doped with phosphorescent coloring and fluorescent dye, adopt the method for three source evaporations to mix, respectively material of main part, phosphorescent coloring and fluorescent dye are placed different evaporation sources, by controlling the evaporation speed of three evaporation sources, make the doping content in phosphorescent coloring and the fluorescent dye material of main part meet technological requirement;
4. keep above-mentioned vacuum chamber internal pressure constant, on above-mentioned organic luminous layer, continue the evaporation electron transfer layer;
5. keep above-mentioned vacuum chamber internal pressure constant, on above-mentioned electron transfer layer, continue the cathode layer of evaporated metal layer as device.
The organic electroluminescent white light device that the present invention proposes, have the following advantages: phosphorescent coloring and fluorescent dye are entrained in the material of main part jointly in organic luminous layer, the multistage energy delivery of " waterfall type " has taken place between material of main part, phosphorescent coloring and fluorescent dye three, the utilance of fluorescent dye is improved, obtained red fluorescence efficiently, in conjunction with the blue phosphorescent that phosphorescent coloring sends, obtained phosphor-sensitized fluorescent white light parts efficiently.Also overcome simultaneously under big electric current, the luminous efficiency of device is hanged down the shortcoming with poor stability.
Description of drawings
Be illustrated by embodiment, embodiment below in conjunction with accompanying drawing, it is clearer that the present invention can become.
Fig. 1 is the structural representation of the organic electroluminescent white light device that proposes of the present invention, and wherein 1 is transparent substrate, the 2nd, and anode layer, the 3rd, hole transmission layer, the 4th, organic luminous layer, the 5th, electron transfer layer, the 6th, cathode layer, the 7th, power supply.
Fig. 2 is current density-voltage-brightness curve of the OLED1 of the embodiment of the invention 1 preparation.
Fig. 3 is luminous efficiency-current density curve of the OLED1 of the embodiment of the invention 1 preparation.
Fig. 4 is the luminescent spectrum of the OLED1 of the embodiment of the invention 1 preparation.。
Elaborate content of the present invention below in conjunction with the drawings and specific embodiments, should be appreciated that the present invention is not limited to following preferred implementation, preferred implementation is as just illustrative embodiment of the present invention.
Embodiment
For the purpose of reference, list the abbreviation of some organic materials that relate in this specification and full name as follows:
Table 1
Figure C200410046156D00091
Figure C200410046156D00111
Figure C200410046156D00121
Figure C200410046156D00131
Figure C200410046156D00141
The structure of the organic electroluminescent white light device that the present invention proposes as shown in Figure 1, wherein: 1 be transparent substrate, can be glass or flexible substrate, a kind of material in flexible substrate employing polyesters, the polyimides compounds; 2 is anode layer, can adopt inorganic material or organic conductive polymer, inorganic material is generally the higher metals of work function such as metal oxides such as ITO, zinc oxide, zinc tin oxide or gold, copper, silver, the optimized ITO that is chosen as, organic conductive polymer are preferably a kind of material among PEDOT:PSS, the PANI; 3 is hole transmission layer, adopts the stronger p type organic semiconducting materials of cavity transmission ability, is generally the triphenylamine compounds, a kind of as in the materials such as NPB, TPD, MTDATA, and the present invention is preferably NPB; 4 is organic luminous layer, adopt micromolecule or polymeric material as material of main part, this material of main part has higher triplet, can give phosphorescent coloring with energy delivery effectively, make phosphorescent coloring luminous, the micromolecule material of main part generally uses a kind of material in biphenyl-carbazoles (as CBP) or benzene-carbazoles (as DCB, the CPF) compound, and the polymer body material is generally polyvinylcarbazole or poly-fluorenes class material.Be entrained in the metal organic complex that phosphorescent coloring in the material of main part is generally blue light-emitting, as FIrpic, FIr6, FPt1 etc., its average doping content is 1~20wt%, and preferred average doping content is 5~12wt%.The red fluorescence dyestuff of mixing simultaneously in material of main part with phosphorescent coloring comprises DCM, DCM1, DCM2, DCJTB, Rubrene etc., and average doping content is 0.05~1wt%, and preferred concentration is 0.2~0.8wt%; 5 is electron transfer layer, is generally metal organic complex (as Alq 3, BAlq, Gaq 3, Al (Saph-q) or Ga (Saph-q)), aromatic condensed ring class (as pentacene, perylene), o-phenanthroline class be (as a kind of material in Bphen, BCP) Huo oxadiazole class (as the PBD) compound; 6 is cathode layer (metal level), generally adopts the alloy of the lower metal of work functions such as lithium, magnesium, calcium, strontium, aluminium, indium or they and copper, gold, silver, and the present invention is preferably Mg:Ag alloy-layer, Ag layer or LiF layer successively, Al layer successively.
The organic electroluminescent white light device that the present invention proposes also can comprise anode buffer layer (not showing among Fig. 1), anode buffer layer is between anode layer and hole transmission layer, the general a kind of material that adopts in phthalocyanines, polyacrylate, polyimide, fluoropolymer, inorganic fluoride salt, inorganic oxide or the diamond is as CuPc etc.
A kind of preferred structure of organic electroluminescent white light device of the present invention has following structural formula (1):
Glass/ITO/ hole transmission layer/organic luminous layer 1/ electron transfer layer/cathode layer (1)
Comprise in the organic luminous layer 1 that wherein material of main part is doped with phosphorescent coloring and fluorescent dye simultaneously.According to said structure formula (1), be described below in conjunction with the detailed execution mode of preparation process of device:
The washing agent of 1. utilization heat is ultrasonic to be cleaned the transparent conduction base sheet ito glass with the ultrasonic method of deionized water, place it in oven dry under the infrared lamp after the cleaning, ito glass to oven dry carries out the preliminary treatment that UV ozone is cleaned and the low energy oxygen ion beam bombards then, wherein the ITO film above the conductive substrate is as the anode layer of device, the square resistance of ITO film is 5 Ω~100 Ω, and thickness is 80~280nm;
2. place in the vacuum chamber with above-mentioned cleaning, drying and through pretreated ito glass, be evacuated to 1 * 10 -5~9 * 10 -3Pa, evaporation one deck hole mobile material on above-mentioned ITO film then, the evaporation speed of material film is 0.01~0.5nm/s, thickness is 20~80nm;
3. keep above-mentioned vacuum chamber internal pressure constant, on above-mentioned hole transmission layer, continue evaporation organic luminous layer 1, adopt the method for three source evaporations to mix, respectively with material of main part, phosphorescent coloring, fluorescent dye places different evaporation sources, with three film thickness monitoring instrument probes the evaporation speed of three evaporation sources is monitored respectively simultaneously at evaporation, by controlling the evaporation speed of three evaporation sources, make phosphorescent coloring, the doping content of fluorescent dye in material of main part meets technological requirement, the doping content of phosphorescent coloring is 1~20wt%, and the doping content of fluorescent dye is 0.05~1wt%.Total film thickness is 20~100nm;
4. keep above-mentioned vacuum chamber internal pressure constant, continue evaporation one deck electron transfer layer on above-mentioned organic luminous layer, the evaporation speed of material film is 0.01~0.5nm/s, and thickness is 20~80nm;
5. keep above-mentioned vacuum chamber internal pressure constant, evaporated metal layer, metal fluoride layer or alloy-layer are as the cathode layer of device successively on above-mentioned electron transfer layer, and wherein alloy-layer adopts the method for double source evaporation to mix.
The another kind of preferred structure of organic electroluminescent white light device of the present invention has following structural formula (2):
Glass/ITO/ anode buffer layer/organic luminous layer 2/ electron transfer layer/electric transmission and hole blocking layer/cathode layer
(2)
Comprise in the organic luminous layer 2 that wherein the material of main part mixing with hole transport function has the electric transmission materials with function, mixes phosphorescent coloring and fluorescent dye according to certain proportioning again.According to said structure formula (2), be described below in conjunction with the detailed execution mode of preparation process of device:
The washing agent of 1. utilization heat is ultrasonic to be cleaned the transparent conduction base sheet ito glass with the ultrasonic method of deionized water, place it in oven dry under the infrared lamp after the cleaning, ito glass to oven dry carries out the preliminary treatment that UV ozone is cleaned and the low energy oxygen ion beam bombards then, wherein the ITO film above the conductive substrate is as the anode layer of device, the square resistance of ITO film is 5 Ω~100 Ω, and thickness is 80~280nm;
2. the thick anode buffer layer of first spin coating one deck 60nm is dried with infrared lamp.To have the material of main part of hole transport function and have the electric transmission materials with function and be dissolved in the chloroform in certain proportion.Phosphorescent coloring and fluorescent dye are dissolved in the chloroform respectively.Three kinds of solution drawing respective volume according to different concentration carry out proportioning.Mixed solution filter with 0.45 μ m before carrying out spin coating to get rid of film filters.Control thickness by regulating rotating speed, with the infrared lamp oven dry, about the about 80nm of its thickness;
3. above-mentioned ito glass through spin-coat process and oven dry is placed in the vacuum chamber, be evacuated to 1 * 10 -5~9 * 10 -3Pa, evaporation one deck electron transfer layer on above-mentioned spin-coating film then, the evaporation speed of material film is 0.01~0.5nm/s, thickness is 20~80nm; Send into vacuum coating equipment at last, evaporation one deck electric transmission and hole blocking layer;
4. keep above-mentioned vacuum chamber internal pressure constant, evaporated metal layer, metal fluoride layer or alloy-layer are as the cathode layer of device successively on above-mentioned electron transfer layer, and wherein alloy-layer adopts the method for double source evaporation to mix.
Embodiment 1 (device number OLED1)
Prepare OLED1 with the method for preparing device shown in the structural formula (1).
Hole transmission layer among the OLED1 adopts NPB, and material of main part adopts DCB in the organic luminous layer, and phosphorescent coloring adopts FIrpic and red dye to adopt DCJTB, and electron transfer layer adopts Bphen, and cathode layer adopts Mg:Ag alloy and Ag.
Glass/ITO/NPB/DCB:FIrpic:DCJTB/Bphen/Mg:Ag/Ag
The preparation method is as follows:
The washing agent of 1. utilization heat is ultrasonic to be cleaned the transparent conduction base sheet ito glass with the ultrasonic method of deionized water, place it in oven dry under the infrared lamp after the cleaning, ito glass to oven dry carries out the preliminary treatment that UV ozone is cleaned and the low energy oxygen ion beam bombards then, wherein the ITO film above the conductive substrate is as the anode layer of device, the square resistance of ITO film is 15 Ω, and thickness is 200nm;
2. place in the vacuum chamber with above-mentioned cleaning, drying and through pretreated ito glass, be evacuated to 1 * 10 -5~9 * 10 -3Pa, evaporation one deck NPB is as the hole transmission layer of device on above-mentioned ITO film then, and the evaporation speed of NPB film is 0.3nm/s, and thickness is 40nm;
3. keep above-mentioned vacuum chamber internal pressure constant, on above-mentioned NPB hole transmission layer, continue the organic luminous layer that evaporation is doped with phosphorescent coloring FIrpic and red dye DCJTB, adopt the method for three source evaporations to mix, respectively with material of main part DCB, phosphorescent coloring FIrpic, fluorescent dye DCJTB places different evaporation sources, with three film thickness monitoring instrument probes the evaporation speed of three evaporation sources is monitored respectively simultaneously at evaporation, by controlling the evaporation speed of three evaporation sources, make FIrpic, the doping content of DCJTB in DCB meets technological requirement, the doping content of FIrpic in DCB is 10wt%, and the doping content of DCJTB in DCB is 0.2wt%.Total film thickness is 30nm;
4. keep above-mentioned vacuum chamber internal pressure constant, continue the electron transfer layer of evaporation one deck Bphen as device on above-mentioned organic luminous layer, the evaporation speed of Bphen film is 0.3nm/s, and thickness is 30nm;
5. keep above-mentioned vacuum chamber internal pressure constant, on above-mentioned Bphen electron transfer layer successively evaporation Mg:Ag alloy-layer, Ag layer as the cathode layer of device, wherein alloy-layer adopts the method for double source evaporation to mix, Mg, Ag evaporation speed ratio are 10:1 in the alloy-layer, the total speed of evaporation is 1nm/s, the evaporation gross thickness is 100nm, and the evaporation speed of Ag layer is 0.5nm/s, and thickness is 50nm.
The device parameters of OLED1 is referring to table 2, and the electric current-brightness of device-voltage curve, luminous efficiency-current density curve, luminescent spectrum figure are respectively referring to accompanying drawing 2-4.
Embodiment 2 (device number OLED2)
Prepare OLED2 with the method for preparing device shown in the structural formula (1).
Material of main part employing CBP in the organic luminous layer among the OLED2, phosphorescent coloring adopts FIr6 and red dye to adopt DCM, and electron transfer layer adopts BAlq, and cathode layer adopts LiF and Al alternating layer.
Glass/ITO/CBP:Fir6:DCM/BAlq/LiF/Al
It is identical with embodiment 1 to prepare among the OLED2 method of luminescent layer and electron transfer layer, and wherein the luminescent layer thickness is 30nm, and the FIr6 doping content is 3wt%, and the DCM doping content is 0.05wt%, and the BAlq thickness is 40nm.
The method for preparing cathode layer is as follows: keep above-mentioned vacuum chamber internal pressure constant, on above-mentioned BAlq electron transfer layer successively evaporation LiF layer, Al layer as the cathode layer of device, wherein the thickness of LiF layer is 0.2~2nm, evaporation speed is 0.01~0.1nm/s, the thickness of Al layer is 40~200nm, and evaporation speed is 0.01~0.5nm/s.
The device parameters of OLED2 is referring to table 2
Embodiment 3 (device number OLED3)
Prepare OLED3 with the method for preparing device shown in the structural formula (2).
Glass/ITO/PEDOT/PVK:PBD:FIrpic:Rubrene/Bphen/Mg:Ag/Ag
The preparation method is as follows:
The washing agent of 1. utilization heat is ultrasonic to be cleaned the transparent conduction base sheet ito glass with the ultrasonic method of deionized water, place it in oven dry under the infrared lamp after the cleaning, ito glass to oven dry carries out the preliminary treatment that UV ozone is cleaned and the low energy oxygen ion beam bombards then, wherein the ITO film above the conductive substrate is as the anode layer of device, the square resistance of ITO film is 30 Ω, and thickness is 200nm;
2. the thick PEDOT of first spin coating one deck 60nm is dried with infrared lamp as anode buffer layer.Adopt PVK as matrix and hole mobile material, PBD is as electron transport material, and PVK and PBD are dissolved in the chloroform with the ratio of 9:1.FIrpic and Rubrene are dissolved in the chloroform the two respectively.Three kinds of solution drawing respective volume according to different concentration carry out proportioning.The doping content of FIrpic is 18wt%, and the Rubrene doping content is 0.8wt%, and mixed solution filter with 0.45 μ m before carrying out spin coating to get rid of film filters.Control thickness by regulating rotating speed, with the infrared lamp oven dry, its thickness is 80nm;
3. above-mentioned ito glass through spin-coat process and oven dry is placed in the vacuum chamber, be evacuated to 1 * 10 -5~9 * 10 -3Pa, evaporation one deck Bphen is as the electron transfer layer of device on above-mentioned spin-coating film then, and the evaporation speed of Bphen film is 0.2nm/s, and thickness is 15nm; Send into vacuum coating equipment at last, evaporation 15nm BPhen is as electric transmission and hole blocking layer;
4. keep above-mentioned vacuum chamber internal pressure constant, on above-mentioned Bphen electron transfer layer successively evaporation Mg:Ag alloy-layer, Ag layer as the cathode layer of device, wherein alloy-layer adopts the method for double source evaporation to mix, Mg, Ag evaporation speed ratio are 10:1 in the alloy-layer, the total speed of evaporation is 1.5nm/s, the evaporation gross thickness is 100nm, and the evaporation speed of Ag layer is 0.5nm/s, and thickness is 50nm.
The device parameters of OLED3 is referring to table 2
Table 2
Figure C200410046156D00191
As can be seen from Table 2, the organic electroluminescence device that adopts this technology to obtain, all can obtain higher white luminous of brightness, efficient, its brightness and luminous efficiency all are better than even green phosphorescent dye sensitization ruddiness and the white light parts that obtains, show owing to adopt the blue phosphorescent dyestuff, the performance of white light parts is greatly improved as sensitizer and blue-light-emitting agent.
Although describe the present invention in conjunction with the preferred embodiments, but the present invention is not limited to the foregoing description and accompanying drawing, should be appreciated that under the guiding of the present invention's design, those skilled in the art can carry out various modifications and improvement, and claims have been summarized scope of the present invention.

Claims (19)

1. organic electroluminescent white light device, this device architecture comprises transparent substrate, anode layer, organic function layer and cathode layer successively, comprise luminescent layer in the organic function layer, it is characterized in that, comprise material of main part, blue phosphorescent dyestuff and red fluorescence dyestuff in the luminescent layer.
2. organic electroluminescent white light device according to claim 1 is characterized in that, the doping content of described blue phosphorescent dyestuff is 1wt%~20wt%.
3. organic electroluminescent white light device according to claim 1 is characterized in that, the doping content of described red fluorescence dyestuff is 0.05wt%~1wt%.
4. organic electroluminescent white light device according to claim 1 is characterized in that, described material of main part is a kind of material in carbazoles, the compound of fluorene class.
5. organic electroluminescent white light device according to claim 4 is characterized in that, described carbazoles, compound of fluorene class material comprise polyvinylcarbazole, 4,4 '-N, N '-two carbazoles-biphenyl, N, N '-two carbazyl-1,4-dimethylene benzene or 9,9-two (4-two carbazoles-phenyl) fluorenes.
6. organic electroluminescent white light device according to claim 2 is characterized in that, described blue phosphorescent dyestuff is a metal organic complex.
7. organic electroluminescent white light device according to claim 6 is characterized in that, described metal organic complex comprises two [2-(4 ', 6 '-difluorophenyl) pyridine radicals-N, C 2 '] picolinic acid iridium (III), two (4 ', 6 '-difluorophenyl pyridine radicals) four (1-pyrazoles) boryl iridium (III), (2-(4 ', 6 '-difluorophenyl) pyridine radicals-N, C 2 ') acetylacetone based platinum (II).
8. organic electroluminescent white light device according to claim 3, it is characterized in that, described red fluorescence dyestuff comprises 4-methylene dicyanoethyl-2-methyl-6-(p-dimethylamino styryl)-4H-pyrans, the 4-4-dicyano methylene-2-tert-butyl group-6-(1,1,7,7-tetramethyl-julolidine-9-vinyl)-4H-pyrans and 5,6,11,12-tetraphenyl aphthacene.
9. organic electroluminescent white light device according to claim 1 is characterized in that, comprises electron transfer layer in the described organic function layer.
10. organic electroluminescent white light device according to claim 1 is characterized in that, comprises electron transfer layer and hole transmission layer in the described organic function layer.
11. organic electroluminescent white light device according to claim 1 is characterized in that, comprises electron transfer layer, hole transmission layer and resilient coating in the described organic function layer, resilient coating is between hole transmission layer and anode.
12. organic electroluminescent white light device according to claim 11 is characterized in that, comprises hole injection layer in the described resilient coating.
13., it is characterized in that described hole transmission layer adopts a kind of material in the triphenylamine compounds according to claim 10 or 11 described organic electroluminescent white light devices.
14. organic electroluminescent white light device according to claim 13 is characterized in that, described triphenylamine compounds comprises N, N '-two-(1-naphthyl)-N, N '-diphenyl-1,1 '-xenyl-4,4 '-diamines, N, N '-diphenyl-N, N '-two (aminomethyl phenyl)-1,1 '-xenyl-4,4 '-diamines or 4,4 ', 4 ' ' (3-aminomethyl phenyl aniline) triphenylamine-three.
15., it is characterized in that described electron transfer layer adopts a kind of material in metal organic complex, aromatic condensed ring class, the o-phenanthroline Lei Huo oxadiazole compounds according to claim 9 or 10 described organic electroluminescent white light devices.
16. organic electroluminescent white light device according to claim 15, it is characterized in that, described metal organic complex comprises three (oxine) aluminium, two (2-methyl-8-quinolyl)-4-phenylphenol aluminium (III), three (oxine) gallium, (the adjacent amine phenol of salicylidene)-(8-oxyquinoline) closes aluminium (III) or (the adjacent amine phenol of salicylidene)-(8-oxyquinoline) closes gallium (III), described aromatic condensed ring compounds comprises pentacene Huo perylene, described o-phenanthroline compounds comprises 4,7-diphenyl-1,10-o-phenanthroline or 2,9-dimethyl-4,7-diphenyl-1, the 10-o-phenanthroline, Suo Shu De oxadiazole compounds comprises 2-(4-t-butyl-phenyl)-5-(4-xenyl)-1,3, the 4-oxadiazole.
17. organic electroluminescent white light device according to claim 12 is characterized in that, described hole injection layer is polymeric material or is inorganic material.
18. organic electroluminescent white light device according to claim 17 is characterized in that, described polymeric material is a kind of in polytetrafluoroethylene, polyimides, polymethyl methacrylate or the polyethylene terephthalate, and described inorganic material is SiO 2, TiO 2Or LiF.
19. a method for preparing the described organic electroluminescent white light device of claim 1, this method may further comprise the steps:
1. successively transparent conduction base sheet is carried out ultrasonic cleaning, oven dry, preliminary treatment, wherein the conducting film above the conductive substrate is as the anode layer of device;
2. place in the vacuum chamber with above-mentioned cleaning, drying and through pretreated transparent conduction base sheet, vacuumize, then evaporation organic function layer on above-mentioned conducting film;
3. keep above-mentioned vacuum chamber internal pressure constant, when the evaporation organic luminous layer, adopt the method for three source evaporations to mix, respectively material of main part, phosphorescent coloring and fluorescent dye are placed different evaporation sources, by controlling the evaporation speed of three evaporation sources, guarantee that phosphorescent coloring and the fluorescent dye doping content in material of main part meets technological requirement;
4. keep above-mentioned vacuum chamber internal pressure constant, on organic function layer, continue the cathode layer of evaporated metal layer as device.
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