CN110335926A - A kind of LED epitaxial wafer and preparation method thereof based on GaN - Google Patents
A kind of LED epitaxial wafer and preparation method thereof based on GaN Download PDFInfo
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- CN110335926A CN110335926A CN201910395232.4A CN201910395232A CN110335926A CN 110335926 A CN110335926 A CN 110335926A CN 201910395232 A CN201910395232 A CN 201910395232A CN 110335926 A CN110335926 A CN 110335926A
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- 238000002360 preparation method Methods 0.000 title claims abstract description 12
- 239000000758 substrate Substances 0.000 claims abstract description 29
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 12
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 12
- 229910002244 LaAlO3 Inorganic materials 0.000 claims description 9
- 239000000126 substance Substances 0.000 claims description 7
- 229910021529 ammonia Inorganic materials 0.000 claims description 6
- 238000006243 chemical reaction Methods 0.000 claims description 6
- 229910052757 nitrogen Inorganic materials 0.000 claims description 6
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 claims description 6
- 238000000151 deposition Methods 0.000 claims description 5
- 230000002708 enhancing effect Effects 0.000 claims description 5
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims description 3
- 229910000077 silane Inorganic materials 0.000 claims description 3
- 239000000463 material Substances 0.000 abstract description 14
- 239000002061 nanopillar Substances 0.000 abstract description 9
- 230000000694 effects Effects 0.000 abstract description 8
- 230000007547 defect Effects 0.000 abstract description 6
- 230000002950 deficient Effects 0.000 abstract description 2
- 239000010408 film Substances 0.000 description 16
- 238000002441 X-ray diffraction Methods 0.000 description 7
- 239000013078 crystal Substances 0.000 description 6
- 230000007423 decrease Effects 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 230000010287 polarization Effects 0.000 description 4
- 238000000034 method Methods 0.000 description 3
- 229910052594 sapphire Inorganic materials 0.000 description 3
- 239000010980 sapphire Substances 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- 230000005699 Stark effect Effects 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000004134 energy conservation Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000005701 quantum confined stark effect Effects 0.000 description 2
- 230000002269 spontaneous effect Effects 0.000 description 2
- -1 LaSrAlTaO6 Inorganic materials 0.000 description 1
- 229910010936 LiGaO2 Inorganic materials 0.000 description 1
- 240000007594 Oryza sativa Species 0.000 description 1
- 235000007164 Oryza sativa Nutrition 0.000 description 1
- JTCFNJXQEFODHE-UHFFFAOYSA-N [Ca].[Ti] Chemical compound [Ca].[Ti] JTCFNJXQEFODHE-UHFFFAOYSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 230000003139 buffering effect Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000004615 ingredient Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 235000009566 rice Nutrition 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0075—Processes for devices with an active region comprising only III-V compounds comprising nitride compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/12—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a stress relaxation structure, e.g. buffer layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Nanotechnology (AREA)
- Physics & Mathematics (AREA)
- Composite Materials (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Materials Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Led Devices (AREA)
Abstract
The LED epitaxial wafer and preparation method thereof based on GaN that the invention discloses a kind of, the LED epitaxial wafer includes substrate, wherein GaN nano-pillar insert layer and n-GaN layers are sequentially formed on the substrate.LED epitaxial wafer and preparation method thereof provided by the invention based on GaN, GaN insert layer uses nano-pillar array structure, and relative to film-type buffer layer, the contact area of nano column array buffer layer and substrate is small, stress is easy to get release, is substantially shorter crack length；Nanometer column material is defective can to substantially reduce defect concentration from effect is excluded, the GaN film for being easier to obtain flawless high quality in subsequent growth.
Description
Technical field
The present invention relates to a kind of LED epitaxial wafer and preparation method thereof more particularly to a kind of LED epitaxial wafer based on GaN and
Preparation method.
Background technique
Light emitting diode (light-emitting diode, LED) because have efficiently, it is energy conservation and environmental protection, the long-life, small in size
The advantages that, it is expected to the lighting source for replacing traditional incandescent lamp, fluorescent lamp and gas-discharge lamp to become a new generation, causes industry
And the extensive concern of scientific research field.It is born so far from first LED in 1962, the various aspects of performance of LED has all obtained greatly
It is promoted, application field is also increasingly wider.
Currently, being the GaN and its correlation with excellent photoelectric properties for manufacturing blue white light LED chip most ideal material
Group III-nitride.Although the GaN base LED chip of extension on a sapphire substrate is very mature, this chip mostly base
Built-up in polar surface, this can form very strong internal electric field (magnitude MV/cm), electric dipole easy to form at Quantum Well
And spontaneous polarization field and piezoelectric polarization fields are generated, and then quantum is caused to fetter Stark effect (Quantum-confined
Starker Effect, QCSE), the final luminous efficiency for reducing LED.In fact, the GaN epitaxial film of non-polar plane is demonstrate,proved
The influence of film itself spontaneous polarization effect is avoided that or weakened in fact, is greatly improved the luminous efficiency of chip, is generally acknowledged in the world
Most effectual way.Compared with traditional polar surface film, it is more applicable applied to LED light emitting device.Firstly, using nonpolarity
Face GaN base material prepares LED, and LED luminous efficiency can theoretically improved by about one time；Secondly, non-polar plane LED will not generate hair
The phenomenon that optical wavelength blue shift；Finally, nonpolarity InGaN/GaN Quantum Well has polarization characteristic, and light uniformity is promoted, reached
Energy conservation, the effect for improving tone.And the extension of non-polar plane film is largely related with the selection of substrate material.Therefore
LED industry will obtain the core technology of epitaxial growth, improve LED luminous efficiency, and being bound to, it is sapphire new to find a kind of substitution
Type substrate, and realize the growth of non-polar GaN epitaxial material.
In contrast, LaAlO3Crystal is growing nonpolar face GaN and its more particularly suitable substrate material of LED component.It grinds
The person's of studying carefully discovery, LaAlO3 chemical property are stablized, and are at room temperature monoclinic structure, and space group is R-3c (No.167), structure cell
Parameter are as follows:LaAlO3 crystal at room temperature has counterfeit cubic structure, and ideal calcium titanium
Mine structure is very close.Therefore LaAlO3 monocrystalline matches a variety of perovskite structure material lattices, is that epitaxial growth high temperature is super
Lead film and the fabulous substrate material of giant magnetoresistive thin film, dielectric properties are suitable for answering in terms of low-loss microwave and dielectric resonance
With.In addition, for a long time, LaAlO3As the substrate material of high-temperature superconducting thin film and giant magnetoresistive thin film, technology of preparing is mature, produces
Amount is big, the corresponding substrate of crystal face required for being easy to get.
Summary of the invention
The LED epitaxial wafer and preparation method thereof based on GaN that technical problem to be solved by the invention is to provide a kind of, can
Crack length is greatly shortened, defect concentration is reduced, is easier to obtain the GaN film of flawless high quality.
The present invention to solve above-mentioned technical problem and the technical solution adopted is that provide a kind of LED epitaxial wafer based on GaN,
Including substrate, wherein be sequentially formed with GaN nano-pillar insert layer and n-GaN layers on the substrate.
The present invention provides a kind of preparation method of LED epitaxial wafer based on GaN to solve above-mentioned technical problem and also,
In, include the following steps: S1) GaN nanometers are grown on substrate using plasma enhancing Metallo-Organic Chemical Vapor depositing operation
Column array insert layer；S2 n-GaN) is grown in GaN insert layer using plasma enhancing Metallo-Organic Chemical Vapor depositing operation
Layer.
Further, it is 800 DEG C that reaction chamber temperature is controlled in the step S1, and chamber pressure 200Torr is passed through
200sccm ammonia, 100sccm nitrogen and 380sccm trimethyl gallium.
Further, it is 1000 DEG C that reaction chamber temperature is controlled in the step S2, and chamber pressure 200Torr is passed through
The silane of 60sccm, the ammonia of 200sccm, the nitrogen of 100sccm, 380sccm trimethyl gallium.
The present invention, which compares the prior art, to be had following the utility model has the advantages that GaN insert layer of the invention is using nano column array knot
Structure, relative to film-type buffer layer, the contact area of nano column array buffer layer and substrate is small, and stress is easy to get release, can
Greatly shorten crack length；Nanometer column material is defective from effect is excluded, and can substantially reduce defect concentration.It is preferred that novel LaAlO3
Substrate can substantially reduce quantum constraint Stark effect (Quantum-confined Starker Effect, QCSE) to subsequent
The adverse effect of growth is easier to obtain the GaN film of flawless high quality in subsequent growth.
Detailed description of the invention
Fig. 1 is the LED epitaxial wafer structural schematic diagram based on GaN in the embodiment of the present invention.
Fig. 2 is the top view of GaN nano column array insert layer in the embodiment of the present invention.
Fig. 3 is x-ray diffraction map of the present invention using the GaN (0002) of GaN nano column array insert layer.
Fig. 4 is x-ray diffraction map of the present invention using the GaN (0002) of GaN film insert layer.
Fig. 5 is x-ray diffraction map of the present invention using the GaN (1012) of GaN nano column array insert layer.
Fig. 6 is x-ray diffraction map of the present invention using the GaN (1012) of GaN film insert layer.
Specific embodiment
The invention will be further described with reference to the accompanying drawings and examples, it should be noted that is do not collided
Under the premise of, new embodiment can be formed between various embodiments described below or between each technical characteristic in any combination.Except spy
Except very illustrating, employed in the present embodiment to material and equipment be commercially available.
Fig. 1 is the LED epitaxial wafer structural schematic diagram based on GaN in the embodiment of the present invention.
Referring to Figure 1, the LED epitaxial wafer provided by the invention based on GaN, including substrate 1, sequentially form on substrate 1
GaN nano column array insert layer 2 and n-GaN layer 3.
GaN insert layer of the invention uses nano-pillar array structure, relative to film-type buffer layer, nano column array buffering
Layer is small with the contact area of substrate.If the contact area of film and substrate is 1, nano column array and substrate are connect
Contacting surface product maximum is 0.785, i.e., the area of inscribed circle of square that side length is 1 can so that stress is easy to get release
Greatly shorten crack length.As preferred embodiment, the substrate includes sapphire, Si, SiC, GaN, ZnO, LiGaO2、
LaSrAlTaO6, Al or Cu.
Thickness selection for GaN nano column array insert layer 2, insert layer thickness is too low, can weaken nano-pillar itself
Defect increases its defect concentration, is unfavorable for the n-GaN of subsequent growth high quality from effect is excluded；Insert layer thickness is excessively high,
Nano-pillar is easy to happen bending, fracture, makes density, the orientation uniformity decline of nano-pillar, is unfavorable for subsequent growth high quality
n-GaN.As preferred embodiment, heretofore described GaN nano column array with a thickness of 500~1500nm.
Further described n-GaN layers with a thickness of 1500-3000nm.N-GaN thickness is spent low, can give subsequent LED core
The processing of piece increases larger difficulty, for example requirement is thinned, etching technics is more accurate, and chip yields is caused to decline；N-GaN layers
Thickness is blocked up, and the internal stress in n-GaN can be made to increase, and epitaxial wafer cracks deteriorate, meanwhile, it can also extend growth time, increase
Add production cost.
Further, Si doping concentration is 1 × 1017~1 × 1019cm-3.Si doping concentration is too low, can mention in n-GaN
The efficient carrier of confession is insufficient, will be greatly reduced the electric property of LED chip, for example brightness reduces obviously；Si doping concentration mistake
Height, the defects of n-GaN increase, and crystal quality meeting cliff of displacement formula decline causes the quality of epitaxial wafer to decline, while can also reduce
The electric property of LED chip, such as electric leakage increase.
LED epitaxial wafer provided by the invention based on GaN, preparation method include:
S1) GaN nano column array insert layer growth step: using plasma enhances Metallo-Organic Chemical Vapor and deposits work
Skill is in LaAlO3Upper growth GaN nano-pillar insert layer；
S2) n-GaN layers of growth step: using plasma enhancing Metallo-Organic Chemical Vapor depositing operation is received in GaN
N-GaN layers are grown in rice insert layer.
As preferred embodiment,
Step S1) in, concrete technology condition is as follows:
The process conditions of GaN insert layer are as follows: reaction chamber temperature is 800 DEG C, and chamber pressure 200Torr is passed through
200sccm ammonia, 100sccm nitrogen and 380sccm trimethyl gallium；
Step S2) in, concrete technology condition is as follows:
N-GaN layers of process conditions are as follows: reaction chamber temperature is 1000 DEG C, and chamber pressure 200Torr is passed through 60sccm
Silane, the ammonia of 200sccm, the nitrogen of 100sccm, 380sccm trimethyl gallium；
The present invention increases the crystal quality and electric property of GaN epitaxy film by increasing GaN nano-array insert layer
LED epitaxial wafer structure comprising LaAlO3Substrate 1, with a thickness of 500nm GaN nano-array insert layer 2, with a thickness of 1.5 μm,
Si doping concentration is 1 × 1018cm-3N-GaN layer 3.Performance detection:
1, XRD, the i.e. abbreviation of X-ray diffraction, are X-ray diffractions, by carrying out X-ray diffraction to material,
Its diffracting spectrum is analyzed, the research means of the information such as the ingredient of material, the structure of material internal atom or molecule or form are obtained.
Please continue to refer to Fig. 3-6, abscissa: angle of diffraction (degree), ordinate: diffracted intensity；Comparative example using substrate+
+ n-GaN layers of GaN film, wherein the thickness of GaN film is identical as GaN nano-pillar insert layer thickness, is herein 500nm.Relatively
In comparative example using GaN film be used as insert layer, the embodiment of the present invention use GaN nano-array as insert layer after, GaN is thin
The crystal quality of film, which has, to be obviously improved: GaN (0002) improves 200arcsec, and GaN (1012) improves 321arcsec,
Illustrate to be easier to obtain the GaN film of high quality as insert layer using GaN nano-array.
Although the present invention is disclosed as above with preferred embodiment, however, it is not to limit the invention, any this field skill
Art personnel, without departing from the spirit and scope of the present invention, when can make a little modification and perfect therefore of the invention protection model
It encloses to work as and subject to the definition of the claims.
Claims (7)
1. a kind of LED epitaxial wafer based on GaN, including substrate, which is characterized in that be sequentially formed with GaN nanometers on the substrate
Column insert layer and n-GaN layers.
2. as described in claim 1 based on the LED epitaxial wafer of GaN, which is characterized in that the substrate is LaAlO3Substrate, Lan Bao
Stone lining bottom or SiC substrate.
3. as described in claim 1 based on the LED epitaxial wafer of GaN, which is characterized in that the GaN nano column array insert layer
With a thickness of 500-1500nm.
4. as described in claim 1 based on the LED epitaxial wafer of GaN, which is characterized in that described n-GaN layers with a thickness of 1500
~3000nm, Si doping concentration are 1 × 1017~1 × 1019cm-3。
5. a kind of preparation method of such as described in any item LED epitaxial wafer based on GaN of Claims 1 to 4, which is characterized in that
Include the following steps:
S1 GaN nano column array insert layer) is grown using plasma enhancing Metallo-Organic Chemical Vapor depositing operation on substrate；
S2 n-GaN layers) are grown in GaN insert layer using plasma enhancing Metallo-Organic Chemical Vapor depositing operation.
6. the preparation method of the LED epitaxial wafer based on GaN as claimed in claim 5, which is characterized in that controlled in the step S1
Reaction chamber temperature processed is 800 DEG C, chamber pressure 200Torr, is passed through 200sccm ammonia, 100sccm nitrogen and 380sccm
Trimethyl gallium.
7. the preparation method of the LED epitaxial wafer based on GaN as claimed in claim 5, which is characterized in that controlled in the step S2
Reaction chamber temperature processed be 1000 DEG C, chamber pressure 200Torr, be passed through the silane of 60sccm, the ammonia of 200sccm,
The trimethyl gallium of the nitrogen of 100sccm, 380sccm.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910395232.4A CN110335926A (en) | 2019-05-13 | 2019-05-13 | A kind of LED epitaxial wafer and preparation method thereof based on GaN |
| PCT/CN2019/128054 WO2020228336A1 (en) | 2019-05-13 | 2019-12-24 | Gan-based led epitaxial wafer and preparation method therefor |
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| CN201910395232.4A CN110335926A (en) | 2019-05-13 | 2019-05-13 | A kind of LED epitaxial wafer and preparation method thereof based on GaN |
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| WO2020228336A1 (en) * | 2019-05-13 | 2020-11-19 | 夕心科技（上海）有限公司 | Gan-based led epitaxial wafer and preparation method therefor |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20080017100A1 (en) * | 2006-07-20 | 2008-01-24 | National Central University | Method for fabricating single-crystal GaN based substrate |
| CN102201332A (en) * | 2011-05-08 | 2011-09-28 | 北京燕园中镓半导体工程研发中心有限公司 | Preparation method of GaN substrate |
| US20160190259A1 (en) * | 2014-12-30 | 2016-06-30 | National Tsing Hua University | Epitaxial structure and growth thereof |
| CN105932117A (en) * | 2016-06-07 | 2016-09-07 | 太原理工大学 | GaN-based LED epitaxial structure and preparation method therefor |
| CN108807625A (en) * | 2018-04-24 | 2018-11-13 | 河源市众拓光电科技有限公司 | A kind of AlN buffer layer structures and preparation method thereof |
| CN108831973A (en) * | 2018-04-28 | 2018-11-16 | 华灿光电(苏州）有限公司 | Epitaxial wafer of light emitting diode and preparation method thereof |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100646696B1 (en) * | 2004-03-10 | 2006-11-23 | 주식회사 실트론 | Nitride semiconductor device and method for manufacturing the same |
| TWI412069B (en) * | 2010-12-27 | 2013-10-11 | Ind Tech Res Inst | Nitride semiconductor substrate and manufacturing method thereof |
| CN102593273B (en) * | 2011-01-17 | 2015-09-30 | 晶元光电股份有限公司 | The formation method of light-emitting diode assembly and board structure |
| CN110335926A (en) * | 2019-05-13 | 2019-10-15 | 夕心科技（上海）有限公司 | A kind of LED epitaxial wafer and preparation method thereof based on GaN |
-
2019
- 2019-05-13 CN CN201910395232.4A patent/CN110335926A/en active Pending
- 2019-12-24 WO PCT/CN2019/128054 patent/WO2020228336A1/en active Application Filing
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20080017100A1 (en) * | 2006-07-20 | 2008-01-24 | National Central University | Method for fabricating single-crystal GaN based substrate |
| CN102201332A (en) * | 2011-05-08 | 2011-09-28 | 北京燕园中镓半导体工程研发中心有限公司 | Preparation method of GaN substrate |
| US20160190259A1 (en) * | 2014-12-30 | 2016-06-30 | National Tsing Hua University | Epitaxial structure and growth thereof |
| CN105932117A (en) * | 2016-06-07 | 2016-09-07 | 太原理工大学 | GaN-based LED epitaxial structure and preparation method therefor |
| CN108807625A (en) * | 2018-04-24 | 2018-11-13 | 河源市众拓光电科技有限公司 | A kind of AlN buffer layer structures and preparation method thereof |
| CN108831973A (en) * | 2018-04-28 | 2018-11-16 | 华灿光电(苏州）有限公司 | Epitaxial wafer of light emitting diode and preparation method thereof |
Non-Patent Citations (1)
| Title |
|---|
| 李国强 等: "不同氧化物衬底上高质量GaN薄膜的外延生长", 《半导体技术》 * |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2020228336A1 (en) * | 2019-05-13 | 2020-11-19 | 夕心科技（上海）有限公司 | Gan-based led epitaxial wafer and preparation method therefor |
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