CN110333432A - Gallium nitride microwave power device junction temperature measuring method - Google Patents
Gallium nitride microwave power device junction temperature measuring method Download PDFInfo
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- CN110333432A CN110333432A CN201910613866.2A CN201910613866A CN110333432A CN 110333432 A CN110333432 A CN 110333432A CN 201910613866 A CN201910613866 A CN 201910613866A CN 110333432 A CN110333432 A CN 110333432A
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- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
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- G01R31/26—Testing of individual semiconductor devices
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- G01R31/2603—Apparatus or methods therefor for curve tracing of semiconductor characteristics, e.g. on oscilloscope
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- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
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Abstract
The present invention provides a kind of gallium nitride microwave power device junction temperature measuring method, the tube core heat distribution for including the following steps: S1, calculating gallium nitride Microwave Power Tubes；S2, device substrate and case temperature calibration；S3, the measurement of gallium nitride layer temperature is carried out using raman microspectroscopy method；S4, the measurement of gate metal temperature is carried out using heat reflection imaging method；S5, it is distributed using the maximum junction temperature and three dimensional temperature of finite element method layered method gallium nitride layer.Maximum junction temperature location point, channel temperature distribution and three dimensional temperature distribution under the working condition of the available gallium nitride microwave power device of the present invention.It can be with the data validity of check test by the method emulated and measured data of experiment combines, maximum possible avoids the measurement error and true junction temperature extrapolation error generated by unexpected factors, using up-and-down boundary condition come the junction temperature of digital simulation gallium nitride device, the beneficial effect with more accurate junction temperature.
Description
Technical field
The present invention relates to semiconducter device testing technical field, in particular to a kind of gallium nitride microwave power device junction temperature is surveyed
Determine method.
Background technique
Gallium nitride microwave power device is a kind of novel broad stopband device, and forbidden bandwidth is big, Radiation hardness is strong, output
Power is high, direct current-microwave energy high conversion efficiency, is suitble to work under the adverse circumstances such as high temperature, irradiation, aerospace, military affairs and
Basis is had a wide range of applications in the communications field of new generation.In order to preferably apply gallium nitride microwave power device, need to it
It examined, screened and life appraisal, wherein channel Peak Junction Temperature is key parameter, tests channel maximum junction temperature and Temperature Distribution
It is to calculate thermal resistance, setting electricity, the technical foundation that thermal stress is screened and the service life calculates.In gallium nitride microwave power device, device
Maximum channel temperature be to influence the key factor of device reliability and life cycle, unknown Temperature Distribution will affect device
Research and application, inaccurate junction temperature parameter will lead to the performance to gallium nitride microwave power device and the erroneous judgement in service life, to answering
With bringing hidden danger.
Industry mainstream technology is using the IR thermometry of traditional GaAs to gallium nitride microwave power device at present
Junction temperature measures, and some scholars carry out junction temperature measurement to gallium nitride microwave power device using the test method of micro- Raman.
The technical characterstic of these thermometrys is as follows:
1. IR thermometry is to be measured using infrared method to the surface temperature of device, because of IR thermometry space
Resolution ratio is low, measure be entire device surface layer mean temperature, be not capable of measuring the peak value of the internal channel of microwave power device
Temperature.IR thermometry underestimates junction temperature, is not suitable for the accurate measurement of gallium nitride microwave power device Peak Junction Temperature.
2. micro- Raman thermometry is to carry out direct temperature to the gallium nitride layer in microwave power device using raman microspectroscopy instrument
Measurement, and using the temperature of gallium nitride layer as junction temperature.Its advantage is that spatial resolution is high, however gallium nitride layer is located under channel
Layer, therefore the temperature measured is not the temperature of channel layer.In addition, micro- Raman method is unable to test metal temperature, by microwave power
Device grids block, and can not obtain the accurate channel peak power of the lower layer of T-type grid metal.
Therefore, there are the prior arts can not obtain gallium nitride microwave high power device T-type metal in the above technical field
The Peak Junction Temperature of channel temperature under grid and the problem of Temperature Distribution, which prevent the reliability skills of gallium nitride microwave power device
Art development and further high reliability application.
Summary of the invention
The purpose of the present invention is to provide a kind of gallium nitride microwave power device junction temperature measuring methods, to solve not obtaining
The problem of Peak Junction Temperature and Temperature Distribution of channel temperature under gallium nitride microwave high power device T-type metal gate.
In order to solve the above-mentioned technical problem, the technical scheme is that providing 1, gallium nitride microwave power device junction temperature
Measuring method, which comprises the steps of:
S1, the tube core heat distribution for calculating gallium nitride Microwave Power Tubes；
S2, device substrate and case temperature calibration；
S3, the measurement of gallium nitride layer temperature is carried out using raman microspectroscopy method；
S4, the measurement of gate metal temperature is carried out using heat reflection imaging method；
S5, it is distributed using the maximum junction temperature and three dimensional temperature of finite element method layered method gallium nitride layer.
Further, in the step S1, the tube core heat distribution of gallium nitride Microwave Power Tubes is calculated:
Structural parameters, the material parameter of device are set in TCAD software, under defined bias condition in calculating device
Heat distribution；Calculating process introduces self-heating effect, electro thermal coupling effect and inverse piezoelectric effect, obtains microwave power under rated condition
The tube core Peak Junction Temperature heat distribution data of pipe.
Further, in the step S2, device substrate and case temperature calibration:
It is changed using underlayer temperature of the alternating temperature platform to device, and is carried out using shell temperature of the highly sensitive point thermometer to device
Measurement result and alternating temperature platform temperature are made calibration relation curve by measurement.
Further, in the step S3, the measurement of gallium nitride layer temperature is carried out using raman microspectroscopy method:
It after the encapsulation cover plate of gallium nitride device is safely removed, is mounted on test fixture, by test fixture together with tested
Device be placed in the test zone of raman microspectroscopy instrument；
Operating bias is not applied to device, change the temperature of alternating temperature platform: initial temperature is 25 DEG C, increases by 10 DEG C every time and protects
Warm half an hour measures gallium nitride epitaxial materials E2 (H) peak displacement and temperature calibration curve, obtains the temperature of gallium nitride material；
Using raman microspectroscopy to the gallium nitride layer between the grid and source of microwave power device at interval of 0.5 μm of progress temperature measurement, and draw
The Temperature Distribution mapping of submicron order processed schemes.
Further, the test fixture substrate is the metal substrates such as rectangular copper base or aluminum substrate, and device is gone
After encapsulation, device is bonded in the groove of substrate center using heat-conducting glue, and is fixed using screw.Test fixture
Electrical connection are as follows: the output micro-strip port 1 of the gate input mouth of device and input matching network, input feeding network it is micro-
Port 2 connects by welding, forms T-type biasing section 1；The input terminal micro-strip port 3 of input matching network and input
The output end micro-strip port 4 of anti-Self-excitation Network is connected；It inputs matched input terminal micro-strip to be connected with 50ohm coaxial connector, together
Mandrel connector can connect the coaxial port of coaxial load or measuring instrumentss；The drain output mouth of device and output matching network
Input micro-strip port 5, the micro-strip port 6 for exporting feeding network connect by welding, form T-type biasing section 2；Output
The output end micro-strip port 7 of distribution network is connected with the output end micro-strip port 8 for exporting anti-Self-excitation Network；Export matched output end
Micro-strip is connected with 50ohm coaxial connector, and coaxial connector can be connected with coaxial load or measuring instrumentss.
Further, in the step S4, the measurement of gate metal temperature is carried out using heat reflection imaging method:
S4-1, using the reflectivity of grid material and the correlation of grid material and temperature, it is inclined not apply work to device
It sets, change the temperature of alternating temperature platform: initial value is 25 DEG C, increases by 10 DEG C every time and keeps the temperature half an hour, applies biasing to device and utilizes
The gate temperature of heat reflection imaging system measurement device obtains heat reflection calibration image and experiment curv；
S4-2, defined operating bias is applied to device, carries out temperature using grid of the reflectivity thermal imaging system to device
Degree measurement；According to the channel length of device, select wavelength for the wavelength of 400-800nm, to the table of the surface T-type grid metal of device
Face temperature measures, and obtains the experiment curv of the upper surface high spatial resolution of T-type grid metal.
Further, in the step S5, using finite element method layered method gallium nitride layer maximum junction temperature and
Three dimensional temperature distribution:
The heat source that step S1 is generated is as submicron order source, the submicron order heat distribution data that step S3, measure in S4
As the thermal boundary condition of fitted area, using the distance of heat source and Raman test closest approach as variable X, by heat source and T-type
Grid metal lowest level distance is used as variable Y, by changing the value of X and Y, utilizes the temperature of finite element analysis computation Raman test point
With the undermost temperature of T-type grid metal, when finite element analysis numerical value and experiment test number it is equal in grid structure and gallium nitride layer
Be fitted it is consistent on the basis of, obtain gallium nitride device junction temperature.
Further, it is in following that the step of junction temperature measurement is carried out when gallium nitride microwave power device structural parameters are unknown
One kind:
1) step S2, S3 and S5 are used, obtaining junction temperature using finite element method, box drain road is maximum on that gallium nitride layer
Temperature and Temperature Distribution, junction temperature value is set as T at this time, and it is 70 DEG C -250 DEG C that T temperature, which changes range, and initial value stepping step-length is 10 DEG C,
It is 5 DEG C and 1 DEG C that step-length is gradually changed after being fitted convergence；
2), using step S2, S4 and S5, using finite element method obtain junction temperature T-type metal gate lower channels most
Big temperature and Temperature Distribution, junction temperature value is set as T at this time, and it is 70 DEG C -250 DEG C that T temperature, which changes range, and initial value stepping step-length is 10
DEG C, it is 5 DEG C and 1 DEG C that step-length is gradually changed after being fitted convergence)；
3) step S2, S3, S4 and S5 are used, obtains junction temperature box drain under T-type Metal gate layer using finite element method
Road maximum temperature and Temperature Distribution, junction temperature value is set as T at this time, and it is 70 DEG C -250 DEG C that T temperature, which changes range, and initial value stepping step-length is
10 DEG C, it is 5 DEG C and 1 DEG C that step-length is gradually changed after being fitted convergence.
Further, the Temperature Distribution raman microspectroscopy method measured as the semiconductor boundary condition of accurate junction temperature,
The Temperature Distribution that the heat reflection method is measured is as metal layer boundary condition.
Further, in the step S5, the junction temperature distribution of calculating is used as heat source, using the coordinate of Peak Junction Temperature point as change
Amount changes the coordinate of Peak Junction Temperature point, Temperature Distribution under different location is calculated, by this Temperature Distribution and metal layer and Raman layer temperature
Degree distribution is compared, to be fitted the Peak Junction Temperature and junction temperature distribution of gallium nitride device.
Gallium nitride microwave power device junction temperature measuring method provided by the invention, solving general measure method can not be accurate
Obtain the problem of gallium nitride device Peak Junction Temperature.Under working condition using the available gallium nitride microwave power device of this method
Maximum junction temperature location point, channel temperature distribution and three dimensional temperature distribution.Method by emulating and measured data of experiment combines
The measurement error generated by unexpected factors and the extrapolation of true junction temperature can be avoided to miss with the data validity of check test, maximum possible
Difference, using up-and-down boundary condition come the junction temperature of digital simulation gallium nitride device, the beneficial effect with more accurate junction temperature.
Detailed description of the invention
Invention is described further with reference to the accompanying drawing:
Fig. 1 is the channel cross-sections schematic diagram of device of the present invention and junction temperature to be tested, wherein is knot to be tested in dotted line frame
Temperature area, right side dashed box are device constituent materials；
Fig. 2 is device of the present invention and area schematic to be tested, wherein left side dashed box is metal gate reflective thermal to be tested
Test zone, right side dashed box are Raman sample point distributed areas to be tested；
Fig. 3 is heat source of the present invention, boundary condition and junction temperature calculation flow chart；
Specific embodiment
Below in conjunction with the drawings and specific embodiments to gallium nitride microwave power device junction temperature measuring method proposed by the present invention
It is described in further detail.According to following explanation and claims, advantages and features of the invention will be become apparent from.It should be noted
It is that attached drawing is all made of very simplified form and using non-accurate ratio, only to facilitate, lucidly aid in illustrating this hair
The purpose of bright embodiment.
Core of the invention thought is that the present invention provides a kind of accurate determination method of gallium nitride microwave power device,
Carry out Accurate Curve-fitting device peak junction temperature in conjunction with emulation and temperature measurement experiment, is respectively adopted using heat reflection thermometry come getter
The temperature of the different grid of part, using raman microspectroscopy method come the temperature of the gallium nitride layer of the different channels of acquisition device；Utilize member
Component pipe core grade TCAD emulation come Temperature Distribution in die internal peak temperature under bias condition as defined in determining and two dimensional cross-section,
Basic device structure is shown in Fig. 1, it can be deduced that Peak Junction Temperature and grid metal bottom (coboundary) lower layer's gallium nitride layer (lower boundary)
Temperature Distribution.Using die-level simulation result as heat source, the temperature that heat reflection thermometry and raman microspectroscopy method are measured is as upper
Lower temperature boundary is calculated, further the Fitting Calculation gallium nitride junction temperature using the method layering of finite element.
Fig. 1 be the present invention relates to microwave power device basic structure diagrammatic cross-section, need channel temperature to be tested
Degree is that junction temperature region is as shown in phantom in FIG., is distributed under T-type grid on GaN layer, the partial region of channel can not utilize
The prior art directly measures, and needs to be calculated after the heat source and corresponding boundary condition that device has been determined using finite element technique
After obtain.
Embodiment 1: a kind of gallium nitride microwave power device junction temperature determines method, includes the following steps:
Step 1, the tube core heat distribution of gallium nitride Microwave Power Tubes is calculated.The structure ginseng of device is set in TCAD software
Number, material parameter, the heat distribution under defined bias condition in calculating device.Calculating process introduces following physical effect: from
Fuel factor, electro thermal coupling effect, inverse piezoelectric effect finally obtain the tube core Peak Junction Temperature heat point of Microwave Power Tubes under rated condition
Cloth data；
Step 2, device substrate and case temperature calibration.It is changed using underlayer temperature of the alternating temperature platform to device, and benefit
It is measured with shell temperature of the highly sensitive point thermometer to device, measurement result and alternating temperature platform temperature is made into calibration relation curve.；
Step 3, the measurement of gallium nitride layer temperature is carried out using raman microspectroscopy method.By the cover board safety of the encapsulation of gallium nitride device
It after removal, is mounted on test fixture, test fixture includes the anti-self-excitation mould of the support clamping and circuit connecting unit, two sides of device
The biasing module of block, grid end and drain terminal.Test fixture is placed in the test zone of raman microspectroscopy instrument together with tested device.
Operating bias is not applied to device, change the temperature (initial value is 25 DEG C, increases by 10 DEG C every time) of alternating temperature platform and keeps the temperature half an hour,
Gallium nitride epitaxial materials E2 (H) peak displacement and temperature calibration curve are measured, the temperature of gallium nitride material can be obtained using the curve
Degree.Multiple spot (0.5 μm of interval) is measured as far as possible to the gallium nitride layer between the grid and source of microwave power device using raman microspectroscopy
Temperature measurement, and drawing sub-micron Temperature Distribution mapping figure；
Step 4, the measurement of gate metal temperature is carried out using heat reflection imaging method.1) reflection of grid (drain electrode) material is utilized
The correlation of rate and grid (drain electrode) material and temperature does not apply operating bias to device, changes the temperature (initial value of alternating temperature platform
It is 25 DEG C, increases by 10 DEG C every time) and half an hour is kept the temperature, biasing then is applied to device and utilizes heat reflection imaging system measurement device
Gate temperature, obtain heat reflection calibration image and experiment curv；2) defined operating bias is applied to device, uses reflectivity
Thermal imaging system carries out temperature measurement to the grid of device.According to the channel length of device, select wavelength for the wave of 400-800nm
It is long, the surface temperature of the surface T-type grid metal of device is measured, the upper surface high spatial resolution of T-type grid metal is obtained
Experiment curv；
Step 5, it is distributed using the maximum junction temperature and three dimensional temperature of finite element method layered method gallium nitride layer.It will step
Rapid 1 heat source generated is as submicron order source, the heat of step 3, the submicron order heat distribution data measured in 4 as fitted area
Boundary condition regard the distance of heat source and Raman test closest approach as variable X, by heat source and T-type grid metal lowest level distance
It is most lower using the temperature and T-type grid metal of finite element analysis computation Raman test point by changing the value of X and Y as variable Y
The temperature of layer, when the numerical value and experiment test number of finite element analysis are fitted consistent basis in grid structure and gallium nitride layer
On, obtain gallium nitride device junction temperature；
Further, it in unknown device architecture parameter or when test equipment deficiency, still can be used in this method in part
Hold and carries out junction temperature fitting.It specifically includes:
In unknown device architecture parameter, using step 2,3,5, it can use finite element method and obtain junction temperature in nitrogen
Change gallium layer upper channels maximum temperature and Temperature Distribution, junction temperature value is set as T at this time, T temperature change range be (70 DEG C -250 DEG C,
Initial value stepping step-length is 10 DEG C, and it is 5 DEG C and 1 DEG C that step-length is gradually changed after being fitted convergence), this method has comparable accurate
Property.
In unknown device architecture parameter, using step 2,4,5, it can use finite element method and obtain junction temperature in T
Type metal gate lower channels maximum temperature and Temperature Distribution, junction temperature value is set as T at this time, and it is (70 DEG C -250 that T temperature, which changes range,
DEG C, initial value stepping step-length is 10 DEG C, and it is 5 DEG C and 1 DEG C that step-length is gradually changed after being fitted convergence), this method has comparable essence
True property.
In unknown device architecture parameter, using step 2,3,4,5, it can use finite element method acquisition junction temperature and exist
T-type Metal gate layer lower channels maximum temperature and Temperature Distribution, junction temperature value is set as T at this time, T temperature change range be (70 DEG C-
250 DEG C, initial value stepping step-length is 10 DEG C, and it is 5 DEG C and 1 DEG C that step-length is gradually changed after being fitted convergence), this method has comparable
Accuracy.
The present invention relates to method committed step and test and calculation process include:
The present invention relates to device, fixture and test macro connection, further comprise, device and fixture interconnection fastening
Reliably, fixture and the interconnection fastening of alternating temperature platform are reliable, and it is reliable that alternating temperature platform connect fastening with test macro.
The present invention relates to calibration include raman microspectroscopy test macro calibration, further comprise containing calibration
The mobile relationship with temperature of GaN E2 (H) peak position, carries out after stable state should being reached after alternating temperature platform is to device alternating temperature.
The present invention relates to calibration include reflective thermal imaging test system calibration, further comprise containing school
The relationship for the temperature that grid heat reflection measures under quasi- difference shell temperature, it is laggard should to reach stable state after alternating temperature platform is to device alternating temperature
Row.
The present invention relates to device generate heat source be considered as self-heating effect, electro thermal coupling effect and inverse piezoelectric effect,
To remove the error of such device generation.
It calculates data using top edge temperature test data combination heat source of the finite element to T-type grid to calculate, to obtain T
The Temperature Distribution of type grid lower edge, is calculated as boundary condition.
It calculates data to the gallium nitride data combination heat source that Raman is tested using finite element to calculate, to obtain on channel
The Temperature Distribution of side.
Heat source, T-type metal gate Temperature Distribution, GaN layer Temperature Distribution are unifiedly calculated using finite element, had
When limit member calculates, enough grids, and the convergence of setting enough accuracy should be divided, to obtain the channel limiting temperature of device
It is distributed with three dimension temperature.
The present invention is embodied in better than prior art: the technical program has comprehensively considered gallium nitride microwave power device
The features such as self-characteristic, i.e. channel dimensions are small, calorific value is big, T-type metal-gate structures can cover areas of higher temperature.It is basic herein
On, the boundary condition spatial discrimination for the measurement scheme that the technical program uses is high, thus, it is possible to obtain high-precision highest knot
Temperature and distribution.The technical program consider different technologies scheme strengths and weaknesses, i.e., reflection thermal measurement be most suitable for metal part measurement,
Raman test can deeply measure GaN material temperature, and be calibrated in key aspect, to obtain accurate temperature boundary item
Part.When heat source calculates, comprehensively considers various Main physical effects, accurate heat source and distribution can be obtained, it is basic herein
On, heat source, different materials boundary condition are calculated using finite element, available accurate maximum junction temperature and temperature point
Cloth.
Obviously, those skilled in the art can carry out various changes and deformation without departing from essence of the invention to the present invention
Mind and range.In this way, if these modifications and changes of the present invention belongs to the range of the claims in the present invention and its equivalent technologies
Within, then the present invention is also intended to include these modifications and variations.
Claims (10)
1. gallium nitride microwave power device junction temperature measuring method, which comprises the steps of:
S1, the tube core heat distribution for calculating gallium nitride Microwave Power Tubes；
S2, device substrate and case temperature calibration；
S3, the measurement of gallium nitride layer temperature is carried out using raman microspectroscopy method；
S4, the measurement of gate metal temperature is carried out using heat reflection imaging method；
S5, it is distributed using the maximum junction temperature and three dimensional temperature of finite element method layered method gallium nitride layer.
2. gallium nitride microwave power device junction temperature measuring method as described in claim 1, which is characterized in that the step S1
In, calculate the tube core heat distribution of gallium nitride Microwave Power Tubes:
Structural parameters, the material parameter of device, the heat under defined bias condition in calculating device are set in TCAD software
Distribution；Calculating process introduces self-heating effect, electro thermal coupling effect and inverse piezoelectric effect, obtains Microwave Power Tubes under rated condition
Tube core Peak Junction Temperature heat distribution data.
3. gallium nitride microwave power device junction temperature measuring method as described in claim 1, which is characterized in that the step S2
In, device substrate and case temperature calibration:
It is changed using underlayer temperature of the alternating temperature platform to device, and is surveyed using shell temperature of the highly sensitive point thermometer to device
Measurement result and alternating temperature platform temperature are made calibration relation curve by amount.
4. gallium nitride microwave power device junction temperature measuring method as described in claim 1, which is characterized in that the step S3
In, the measurement of gallium nitride layer temperature is carried out using raman microspectroscopy method:
It after the encapsulation cover plate of gallium nitride device is safely removed, is mounted on test fixture, by test fixture together with tested device
Part is placed in the test zone of raman microspectroscopy instrument；
Operating bias is not applied to device, change the temperature of alternating temperature platform: initial temperature is 25 DEG C, increases by 10 DEG C every time and keeps the temperature half
Hour, gallium nitride epitaxial materials E2 (H) peak displacement and temperature calibration curve are measured, the temperature of gallium nitride material is obtained；It utilizes
Raman microspectroscopy, at interval of 0.5 μm of progress temperature measurement, and draws Asia to the gallium nitride layer between the grid and source of microwave power device
Micron-sized Temperature Distribution mapping figure.
5. gallium nitride microwave power device junction temperature measuring method as claimed in claim 4, which is characterized in that test fixture substrate
Device is bonded in base using heat-conducting glue after device removal encapsulation for metal substrates such as rectangular copper base or aluminum substrates
In the groove at plate center, and it is fixed using screw；The electrical connection of test fixture are as follows: the gate input mouth of device with
The output micro-strip port of input matching network, the micro-strip port for inputting feeding network connect by welding, and it is inclined to form T-type
Set section；The input terminal micro-strip port of input matching network is connected with the output end micro-strip port for inputting anti-Self-excitation Network；Input
The input terminal micro-strip matched is connected with 50ohm coaxial connector, and coaxial connector can connect the coaxial of coaxial load or measuring instrumentss
Port；The drain output mouth of device and input micro-strip port, the micro-strip port of output feeding network of output matching network are logical
The mode for crossing welding connects, and forms T-type biasing section；The output end micro-strip port of output matching network and the anti-Self-excitation Network of output
Output end micro-strip port is connected；Matched output end micro-strip is exported to be connected with 50ohm coaxial connector, coaxial connector can with it is same
Axle load or measuring instrumentss are connected.
6. gallium nitride microwave power device junction temperature measuring method as described in claim 1, which is characterized in that the step S4
In, the measurement of gate metal temperature is carried out using heat reflection imaging method:
S4-1, using the reflectivity of grid material and the correlation of grid material and temperature, operating bias is not applied to device, is changed
Become the temperature of alternating temperature platform: initial value increases by 10 DEG C every time and keeps the temperature half an hour, apply biasing to device and utilize heat reflection into 25 DEG C
The gate temperature of imaging system measurement device obtains heat reflection calibration image and experiment curv；
S4-2, defined operating bias is applied to device, carries out temperature survey using grid of the reflectivity thermal imaging system to device
Amount；According to the channel length of device, select wavelength for the wavelength of 400-800nm, to the surface temperature of the surface T-type grid metal of device
Degree measures, and obtains the experiment curv of the upper surface high spatial resolution of T-type grid metal.
7. gallium nitride microwave power device junction temperature measuring method as described in claim 1, which is characterized in that the step S5
In, it is distributed using the maximum junction temperature and three dimensional temperature of finite element method layered method gallium nitride layer:
The heat source that step S1 is generated is as submicron order source, the submicron order heat distribution data conduct that step S3, measures in S4
The thermal boundary condition of fitted area, using the distance of heat source and Raman test closest approach as variable X, by the golden with T-type grid of heat source
Belong to lowest level distance and be used as variable Y, by changing the value of X and Y, utilizes the temperature and T of finite element analysis computation Raman test point
The undermost temperature of type grid metal, when the numerical value and experiment test number of finite element analysis are fitted in grid structure and gallium nitride layer
On the basis of consistent, gallium nitride device junction temperature is obtained.
8. gallium nitride microwave power device junction temperature measuring method as described in claim 1, which is characterized in that when gallium nitride microwave
The step of junction temperature measurement is carried out when power unit structure unknown parameters is one of following:
1) step S2, S3 and S5 are used, obtains junction temperature box drain road maximum temperature on that gallium nitride layer using finite element method
And Temperature Distribution, junction temperature value is set as T at this time, and it is 70 DEG C -250 DEG C that T temperature, which changes range, and initial value stepping step-length is 10 DEG C, to quasi-
Closing and gradually changing step-length after restraining is 5 DEG C and 1 DEG C；
2), using step S2, S4 and S5, junction temperature is obtained in the maximum temperature of T-type metal gate lower channels using finite element method
Degree and Temperature Distribution, junction temperature value is set as T at this time, and it is 70 DEG C -250 DEG C that T temperature, which changes range, and initial value stepping step-length is 10 DEG C, to
It is 5 DEG C and 1 DEG C that step-length is gradually changed after fitting convergence)；
3) use step S2, S3, S4 and S5, using finite element method obtain junction temperature T-type Metal gate layer lower channels most
Big temperature and Temperature Distribution, junction temperature value is set as T at this time, and it is 70 DEG C -250 DEG C that T temperature, which changes range, and initial value stepping step-length is 10
DEG C, it is 5 DEG C and 1 DEG C that step-length is gradually changed after being fitted convergence.
9. gallium nitride microwave power device junction temperature measuring method as described in claim 1, which is characterized in that draw the microcell
Semiconductor boundary condition of the Temperature Distribution that graceful method measures as accurate junction temperature, the Temperature Distribution that the heat reflection method is measured are made
For metal layer boundary condition.
10. gallium nitride microwave power device junction temperature measuring method as described in claim 1, which is characterized in that the step S5
In, the junction temperature distribution of calculating is used as heat source, using the coordinate of Peak Junction Temperature point as variable, changes the coordinate of Peak Junction Temperature point, meter
Temperature Distribution under different location is calculated, by this Temperature Distribution compared with metal layer and Raman layer Temperature Distribution, to be fitted gallium nitride device
The Peak Junction Temperature and junction temperature of part are distributed.
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN117928769A (en) * | 2024-03-21 | 2024-04-26 | 山东大学 | Method for determining channel carrier temperature of gallium nitride device |
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN111665430A (en) * | 2020-03-27 | 2020-09-15 | 厦门市三安集成电路有限公司 | Thermal reliability evaluation method of GaN HEMT device |
| CN114047224A (en) * | 2021-11-24 | 2022-02-15 | 江苏省特种设备安全监督检验研究院 | Method for testing junction temperature and temperature distribution of gallium nitride-based blue light LED |
| CN117074894A (en) * | 2023-07-07 | 2023-11-17 | 西安电子科技大学 | Transient working condition thermoelectric characteristic characterization system and method based on thermal reflection imaging technology |
| CN117074894B (en) * | 2023-07-07 | 2024-04-16 | 西安电子科技大学 | Transient working condition thermoelectric characteristic characterization system and method based on thermal reflection imaging technology |
| CN117928769A (en) * | 2024-03-21 | 2024-04-26 | 山东大学 | Method for determining channel carrier temperature of gallium nitride device |
| CN117928769B (en) * | 2024-03-21 | 2024-05-31 | 山东大学 | Method for determining channel carrier temperature of gallium nitride device |
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