CN110324019A - 具有嵌入式边界环的耦合谐振器滤波器 - Google Patents
具有嵌入式边界环的耦合谐振器滤波器 Download PDFInfo
- Publication number
- CN110324019A CN110324019A CN201910217433.5A CN201910217433A CN110324019A CN 110324019 A CN110324019 A CN 110324019A CN 201910217433 A CN201910217433 A CN 201910217433A CN 110324019 A CN110324019 A CN 110324019A
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- Prior art keywords
- resonator
- crf
- electrode
- boundary
- piezoelectric layer
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Links
- 230000005611 electricity Effects 0.000 claims description 8
- 229910052751 metal Inorganic materials 0.000 claims description 5
- 239000002184 metal Substances 0.000 claims description 5
- 239000000758 substrate Substances 0.000 description 8
- 230000008878 coupling Effects 0.000 description 7
- 238000010168 coupling process Methods 0.000 description 7
- 238000005859 coupling reaction Methods 0.000 description 7
- 239000013078 crystal Substances 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 230000004048 modification Effects 0.000 description 4
- 238000012986 modification Methods 0.000 description 4
- 238000004891 communication Methods 0.000 description 3
- 238000013461 design Methods 0.000 description 3
- 238000001914 filtration Methods 0.000 description 3
- 230000004044 response Effects 0.000 description 3
- 238000010897 surface acoustic wave method Methods 0.000 description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 3
- 229910052721 tungsten Inorganic materials 0.000 description 3
- 239000010937 tungsten Substances 0.000 description 3
- 230000007423 decrease Effects 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 238000003780 insertion Methods 0.000 description 2
- 230000037431 insertion Effects 0.000 description 2
- 229910016570 AlCu Inorganic materials 0.000 description 1
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- JRBRVDCKNXZZGH-UHFFFAOYSA-N alumane;copper Chemical compound [AlH3].[Cu] JRBRVDCKNXZZGH-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
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- 239000006185 dispersion Substances 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 230000002045 lasting effect Effects 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
- H03H9/46—Filters
- H03H9/54—Filters comprising resonators of piezoelectric or electrostrictive material
- H03H9/58—Multiple crystal filters
- H03H9/582—Multiple crystal filters implemented with thin-film techniques
- H03H9/583—Multiple crystal filters implemented with thin-film techniques comprising a plurality of piezoelectric layers acoustically coupled
- H03H9/584—Coupled Resonator Filters [CFR]
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
- H03H9/0023—Networks for transforming balanced signals into unbalanced signals and vice versa, e.g. baluns, or networks having balanced input and output
- H03H9/0095—Networks for transforming balanced signals into unbalanced signals and vice versa, e.g. baluns, or networks having balanced input and output using bulk acoustic wave devices
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
- H03H9/02—Details
- H03H9/02007—Details of bulk acoustic wave devices
- H03H9/02086—Means for compensation or elimination of undesirable effects
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
- H03H9/02—Details
- H03H9/02007—Details of bulk acoustic wave devices
- H03H9/02086—Means for compensation or elimination of undesirable effects
- H03H9/02118—Means for compensation or elimination of undesirable effects of lateral leakage between adjacent resonators
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
- H03H9/02—Details
- H03H9/02007—Details of bulk acoustic wave devices
- H03H9/02086—Means for compensation or elimination of undesirable effects
- H03H9/02125—Means for compensation or elimination of undesirable effects of parasitic elements
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
- H03H9/02—Details
- H03H9/02535—Details of surface acoustic wave devices
- H03H9/02637—Details concerning reflective or coupling arrays
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
- H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
- H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
- H03H9/171—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator implemented with thin-film techniques, i.e. of the film bulk acoustic resonator [FBAR] type
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
- H03H9/46—Filters
- H03H9/54—Filters comprising resonators of piezoelectric or electrostrictive material
- H03H9/58—Multiple crystal filters
- H03H9/582—Multiple crystal filters implemented with thin-film techniques
- H03H9/583—Multiple crystal filters implemented with thin-film techniques comprising a plurality of piezoelectric layers acoustically coupled
- H03H9/585—Stacked Crystal Filters [SCF]
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
- H03H9/46—Filters
- H03H9/54—Filters comprising resonators of piezoelectric or electrostrictive material
- H03H9/58—Multiple crystal filters
- H03H9/582—Multiple crystal filters implemented with thin-film techniques
- H03H9/586—Means for mounting to a substrate, i.e. means constituting the material interface confining the waves to a volume
- H03H9/587—Air-gaps
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
- H03H9/02—Details
- H03H9/125—Driving means, e.g. electrodes, coils
- H03H9/13—Driving means, e.g. electrodes, coils for networks consisting of piezoelectric or electrostrictive materials
Landscapes
- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201862649339P | 2018-03-28 | 2018-03-28 | |
| US62/649,339 | 2018-03-28 | ||
| US16/287,277 US11095267B2 (en) | 2018-03-28 | 2019-02-27 | Coupled resonator filter with embedded border ring |
| US16/287,277 | 2019-02-27 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN110324019A true CN110324019A (zh) | 2019-10-11 |
Family
ID=68055614
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201910217433.5A Pending CN110324019A (zh) | 2018-03-28 | 2019-03-21 | 具有嵌入式边界环的耦合谐振器滤波器 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US11095267B2 (enExample) |
| JP (1) | JP7405513B2 (enExample) |
| KR (1) | KR102658389B1 (enExample) |
| CN (1) | CN110324019A (enExample) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114070224A (zh) * | 2020-08-06 | 2022-02-18 | 诺思(天津)微系统有限责任公司 | 带声学解耦层的体声波谐振器组件及制造方法、滤波器及电子设备 |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US11509287B2 (en) | 2018-12-14 | 2022-11-22 | Qorvo Us, Inc. | Bi-polar border region in piezoelectric device |
| US12316304B2 (en) * | 2022-12-21 | 2025-05-27 | Rf360 Singapore Pte. Ltd. | Vertically coupled SAW resonators |
| WO2025009408A1 (ja) * | 2023-07-03 | 2025-01-09 | 株式会社村田製作所 | 圧電デバイス |
| US20250219615A1 (en) * | 2024-01-03 | 2025-07-03 | Skyworks Global Pte Ltd. | Bulk acoustic wave resonator with bragg grating embedded in electrode |
Citations (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20090096550A1 (en) * | 2007-10-12 | 2009-04-16 | Martin Handtmann | Bulk acoustic wave device |
| US20100005654A1 (en) * | 2008-07-11 | 2010-01-14 | Maxim Integrated Products, Inc. | Planarization Methods |
| CN101931380A (zh) * | 2009-06-24 | 2010-12-29 | 安华高科技无线Ip(新加坡)私人有限公司 | 包括桥部的声学谐振器结构 |
| US20120218056A1 (en) * | 2011-02-28 | 2012-08-30 | Avago Technologies Wireless Ip (Singapore) Pte. Ltd. | Coupled resonator filter comprising a bridge |
| US20120218059A1 (en) * | 2011-02-28 | 2012-08-30 | Avago Technologies Wireless Ip (Singapore) Pte. Ltd. | Stacked bulk acoustic resonator comprising a bridge and an acoustic reflector along a perimeter of the resonator |
| US20120218060A1 (en) * | 2011-02-28 | 2012-08-30 | Avago Technologies Wireless Ip (Singapore) Pte. Ltd. | Bulk acoustic wave resonator comprising bridge formed within piezoelectric layer |
| US20120218058A1 (en) * | 2011-02-28 | 2012-08-30 | Avago Technologies Wireless Ip (Singapore) Pte. Ltd. | Coupled resonator filter comprising a bridge and frame elements |
| US20120248941A1 (en) * | 2011-03-29 | 2012-10-04 | Avago Technologies Wireless Ip (Singapore) Pte. Lt | Stacked bulk accoustic resonator and method of fabricating the same |
| CN102739191A (zh) * | 2011-03-29 | 2012-10-17 | 安华高科技无线Ip(新加坡)私人有限公司 | 包括桥部的堆叠式声学谐振器 |
| US20120280767A1 (en) * | 2011-05-05 | 2012-11-08 | Avago Technologies Wireless Ip (Singapore) Pte. Ltd. | Double film bulk acoustic resonators with electrode layer and piezo-electric layer thicknesses providing improved quality factor |
| US20130314177A1 (en) * | 2011-03-29 | 2013-11-28 | Avago Technologies General Ip (Singapore) Pte. Ltd | Acoustic resonator comprising collar, frame and perimeter distributed bragg reflector |
| US20140176261A1 (en) * | 2011-02-28 | 2014-06-26 | Avago Technologies Wireless Ip (Singapore) Pte. Ltd. | Acoustic resonator device with at least one air-ring and frame |
| US20150349747A1 (en) * | 2014-05-29 | 2015-12-03 | Avago Technologies General Ip ( Singapore) Pte. Ltd. | Capacitive coupled resonator device with air-gap separating electrode and piezoelectric layer |
| US20160126930A1 (en) * | 2011-02-28 | 2016-05-05 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Bulk acoustic wave resonator comprising a ring |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5563739B2 (ja) * | 2008-02-20 | 2014-07-30 | 太陽誘電株式会社 | 圧電薄膜共振器、フィルタ、デュープレクサ、通信モジュール、および通信装置 |
| US8456257B1 (en) | 2009-11-12 | 2013-06-04 | Triquint Semiconductor, Inc. | Bulk acoustic wave devices and method for spurious mode suppression |
| KR101708893B1 (ko) | 2010-09-01 | 2017-03-08 | 삼성전자주식회사 | 체적 음향 공진기 구조 및 제조 방법 |
| US8330325B1 (en) * | 2011-06-16 | 2012-12-11 | Avago Technologies Wireless Ip (Singapore) Pte. Ltd. | Bulk acoustic resonator comprising non-piezoelectric layer |
| US9853626B2 (en) | 2014-03-31 | 2017-12-26 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Acoustic resonator comprising acoustic redistribution layers and lateral features |
| US9401691B2 (en) | 2014-04-30 | 2016-07-26 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Acoustic resonator device with air-ring and temperature compensating layer |
| US9634642B2 (en) | 2014-05-30 | 2017-04-25 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Acoustic resonator comprising vertically extended acoustic cavity |
| US20170054430A1 (en) | 2015-08-21 | 2017-02-23 | Rf Micro Devices, Inc. | Baw resonator having multi-layer electrode and bo ring close to piezoelectric layer |
| US10547283B2 (en) | 2016-03-10 | 2020-01-28 | Qorvo Us, Inc. | Bulk acoustic wave resonator with a border ring and an inner ring |
-
2019
- 2019-02-27 US US16/287,277 patent/US11095267B2/en active Active
- 2019-03-21 CN CN201910217433.5A patent/CN110324019A/zh active Pending
- 2019-03-28 JP JP2019062612A patent/JP7405513B2/ja active Active
- 2019-03-28 KR KR1020190035956A patent/KR102658389B1/ko active Active
Patent Citations (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20090096550A1 (en) * | 2007-10-12 | 2009-04-16 | Martin Handtmann | Bulk acoustic wave device |
| US20100005654A1 (en) * | 2008-07-11 | 2010-01-14 | Maxim Integrated Products, Inc. | Planarization Methods |
| CN101931380A (zh) * | 2009-06-24 | 2010-12-29 | 安华高科技无线Ip(新加坡)私人有限公司 | 包括桥部的声学谐振器结构 |
| US20120218058A1 (en) * | 2011-02-28 | 2012-08-30 | Avago Technologies Wireless Ip (Singapore) Pte. Ltd. | Coupled resonator filter comprising a bridge and frame elements |
| US20120218059A1 (en) * | 2011-02-28 | 2012-08-30 | Avago Technologies Wireless Ip (Singapore) Pte. Ltd. | Stacked bulk acoustic resonator comprising a bridge and an acoustic reflector along a perimeter of the resonator |
| US20120218060A1 (en) * | 2011-02-28 | 2012-08-30 | Avago Technologies Wireless Ip (Singapore) Pte. Ltd. | Bulk acoustic wave resonator comprising bridge formed within piezoelectric layer |
| US20120218056A1 (en) * | 2011-02-28 | 2012-08-30 | Avago Technologies Wireless Ip (Singapore) Pte. Ltd. | Coupled resonator filter comprising a bridge |
| US20140176261A1 (en) * | 2011-02-28 | 2014-06-26 | Avago Technologies Wireless Ip (Singapore) Pte. Ltd. | Acoustic resonator device with at least one air-ring and frame |
| US20160126930A1 (en) * | 2011-02-28 | 2016-05-05 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Bulk acoustic wave resonator comprising a ring |
| US20120248941A1 (en) * | 2011-03-29 | 2012-10-04 | Avago Technologies Wireless Ip (Singapore) Pte. Lt | Stacked bulk accoustic resonator and method of fabricating the same |
| CN102739191A (zh) * | 2011-03-29 | 2012-10-17 | 安华高科技无线Ip(新加坡)私人有限公司 | 包括桥部的堆叠式声学谐振器 |
| US20130314177A1 (en) * | 2011-03-29 | 2013-11-28 | Avago Technologies General Ip (Singapore) Pte. Ltd | Acoustic resonator comprising collar, frame and perimeter distributed bragg reflector |
| US20120280767A1 (en) * | 2011-05-05 | 2012-11-08 | Avago Technologies Wireless Ip (Singapore) Pte. Ltd. | Double film bulk acoustic resonators with electrode layer and piezo-electric layer thicknesses providing improved quality factor |
| US20150349747A1 (en) * | 2014-05-29 | 2015-12-03 | Avago Technologies General Ip ( Singapore) Pte. Ltd. | Capacitive coupled resonator device with air-gap separating electrode and piezoelectric layer |
Non-Patent Citations (3)
| Title |
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| HARTMUT HILLMER, JUERGEN DALEIDEN, SOEREN IRMER, FRIEDHARD ROEMER, CORNELIA PROTT, AMER TARRAF, MARTIN STRASSNER, EDWIN ATARO, T: "Potential of micromachined photonics: miniaturization, scaling, and applications in continuously tunable vertical air-cavity filters", PROC. SPIE 4947, LASER DIODES, OPTOELECTRONIC DEVICES, AND HETEROGENOUS INTEGRATION, 31 December 2003 (2003-12-31) * |
| M. LEE ET AL.: "Improved bulk acoustic wave resonator using edge method for high performance", 2012 ASIA PACIFIC MICROWAVE CONFERENCE PROCEEDINGS, KAOHSIUNG, TAIWAN, 31 December 2012 (2012-12-31) * |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114070224A (zh) * | 2020-08-06 | 2022-02-18 | 诺思(天津)微系统有限责任公司 | 带声学解耦层的体声波谐振器组件及制造方法、滤波器及电子设备 |
Also Published As
| Publication number | Publication date |
|---|---|
| KR102658389B1 (ko) | 2024-04-16 |
| KR20190113670A (ko) | 2019-10-08 |
| US20190305755A1 (en) | 2019-10-03 |
| US11095267B2 (en) | 2021-08-17 |
| JP2019198066A (ja) | 2019-11-14 |
| JP7405513B2 (ja) | 2023-12-26 |
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