CN110318086A - Electroplating tank structure - Google Patents
Electroplating tank structure Download PDFInfo
- Publication number
- CN110318086A CN110318086A CN201810265892.6A CN201810265892A CN110318086A CN 110318086 A CN110318086 A CN 110318086A CN 201810265892 A CN201810265892 A CN 201810265892A CN 110318086 A CN110318086 A CN 110318086A
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- Prior art keywords
- electroplate liquid
- wafer
- tank body
- module
- slot
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Classifications
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- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
- C25D17/001—Apparatus specially adapted for electrolytic coating of wafers, e.g. semiconductors or solar cells
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
- C25D17/02—Tanks; Installations therefor
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- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D21/00—Processes for servicing or operating cells for electrolytic coating
- C25D21/16—Regeneration of process solutions
- C25D21/18—Regeneration of process solutions of electrolytes
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
- C25D5/08—Electroplating with moving electrolyte e.g. jet electroplating
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D7/00—Electroplating characterised by the article coated
- C25D7/12—Semiconductors
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Electrochemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Electroplating Methods And Accessories (AREA)
Abstract
A kind of electroplating tank structure, including a groove body, at least a jet flow module, at least an electroplate liquid recycling module and one recycle supplying module, and electroplate liquid can be accommodated in the groove body, and middle section is that a wafer puts area；The jet flow module is set to the intracorporal side wall of slot, from bottom to top sequentially it is dispersed with multiple spurt holes, it can put area in face of the wafer and connect and gush out electroplate liquid, which is set in the groove body and puts the periphery region in area in the wafer, to lasting recycling electroplate liquid；The circulation supplying module includes an at least liquid supply pipe, at least a recovery tube and pump, the liquid supply pipe is connected to the jet flow module, the recovery tube is connected to the electroplate liquid recycling module, which is connected to the recovery tube and liquid supply pipe and persistent loop recycles and supply electroplate liquid to the groove body；The present invention can maintain electroplate liquid electric field in preferable flow direction as a result, keep field distribution more average, promote the efficiency, reliability and the uniformity of plating.
Description
Technical field
The present invention relates to a kind of technical field of electroplating bath more particularly to a kind of setting for crystal column surface electroplating processes
It is standby.
Background technique
For semiconductor wafer carry out electroplating processes, according to the electroplating technology of use can be classified into cup type electroplating technology and
Latent immersion (dipping-type) electroplating technology, wherein cup type electroplating technology is that electroplating solution is penetrated to half in horizontal location upwards
Semiconductor wafer substrate, and the substrate surface being electroplated is downwards；And latent immersion electroplating technology is to be supplied from plating in electroplating solution
When trench bottom and overflow go out electroplating bath, substrate is erectly dived in the electroplating solution being dipped in electroplating bath.It is general to determine electroplate
Qualitative factor essentially consists in: efficiency, reliability and the uniformity, in above-mentioned technique, its uniformity of cup type electroplating technology and reliable
Degree is high, but efficiency is poor.Latent immersion electroplating technology efficiency is preferable, but wafer is placed in vertical, is easy to influence lower layer and upper layer
Electroplating thickness, therefore reliability and the uniformity are poor.Another plating mode is taken in the present inventor's thinking thus, makes its efficiency, can
By degree and the uniformity etc., good promotion all can get.
Summary of the invention
The main object of the present invention is to provide a kind of electroplating tank structure, the flowing side of electroplate liquid mainly in change electroplating bath
To being intended to the wafer of plating in the latent electroplate liquid being dipped in electroplating bath of vertical type, the present invention separately provides one group in vertical
Jet flow module, the continuous surface that is plated in face of the wafer gush out electroplate liquid, are additionally provided with an electroplate liquid recycling module in wafer
Periphery regional sustained recycles electroplate liquid, on the one hand maintains electroplate liquid electric field in preferable flow direction, makes field distribution more
Be it is average, another aspect sustainable utilization water flow, which is changed, to be replaced close to being plated the electroplate liquid after surface has been reacted, and makes crystal column surface electric
Plating thickness is more uniform, and reliability is good, improves production efficiency.
In order to achieve the above object, the present invention include a groove body, an at least jet flow module, an at least electroplate liquid recycling module with
And a circulation supplying module, electroplate liquid can be accommodated in the groove body, middle section is that wafer puts area, makes wafer in straight in plating
Vertical dive is dipped in electroplate liquid；The jet flow module is set to the intracorporal side wall of the slot, which includes a cavity and distribution
Multiple spurt holes in its surface, multiple spurt holes wafer that from bottom to top sequentially distribution and the facing wafer put area wait for
Surface is plated, which is set in the groove body and puts the periphery region in area in the wafer, to continue
Recycle electroplate liquid；The circulation supplying module includes an at least liquid supply pipe, at least a recovery tube and pump, which is connected to this
Jet flow module, the recovery tube are connected to the electroplate liquid recycling module, which is connected to the recovery tube and liquid supply pipe and persistent loop
The electroplate liquid is recycled and supplied to the groove body.
In the present invention, which includes an outer tank body and an inner tank body, which is located in the outer tank body and height
It is lower, at least one first slot room is formed between the outer tank body and the inner tank body and at least one second slot room, the inner tank body are by face
Solid rectangular slot made of two the first side walls on opposite and two second sidewalls are surrounded, the first slot room be in close proximity to this first
Side wall, the second slot room is then close to the second sidewall.Wherein the outer tank body separately has a fluid reservoir, the fluid reservoir have hole with
The first slot room is connected, and is initially placed in the electroplate liquid overflowed in slot to store wafer.
In the present invention, the overflow notch of multiple recess is additionally provided at the top of the second sidewall, which is to be electroplated
In the process, extra electroplate liquid is allowed to flow in the second slot room, and maintain liquid level close to the inner tank body apical margin but not
It overflows.
In the present invention, which is affixed on the first side wall of the inner tank body, is distributed in the housing surface
Multiple spurt holes be radial distribution in concentric, distributed areas and position correspond to the wafer size, thus tie up
Electroplate liquid is held in preferable electrical field-flow direction.
In the present invention, which is located at wafer and puts the periphery region in area and can recycle plating
Liquid；If being recycled by two side directions, which includes multiple first return ports and at least one first delivery pipe, multiple
First return port is from bottom to top sequentially distributed in the second sidewall, which is set in the second slot room, this one
Delivery pipe surface longitudinal also has multiple first return ports.Water flow of this recycling, which helps persistently to replace to approach, has been plated surface
Electroplate liquid after reaction promotes electroplating quality.
In the present invention, which is located at the wafer and puts the periphery region in area and can recycle plating
Liquid；If being recycled by bottom direction, which includes multiple second recovery holes and at least one second delivery pipe, multiple
Second return port is distributed in the inner tank body bottom, and position corresponds to the lower zone that the wafer puts area's circumference, the outer tank body
Separately there is closed three groove chamber, close to the inner tank body bottom, which is connected in the inner tank body empty for the three groove chamber
Between and the three groove chamber, second delivery pipe be located in the third slot room, the indoor electroplate liquid of third slot can be discharged.
In order to improve the production efficiency, can be in the electroplating activity for once carrying out two wafers in groove body, therefore spray of the invention
Flow module has two groups, is respectively arranged in the inner tank body on two aspectant the first side walls, the electroplate liquid recycling module
Also there are few two groups to be distributed in the groove body.
The beneficial effects of the present invention are the one group provided by the invention jet flow modules in vertical, in face of the wafer
It is plated continuous surface and gushes out electroplate liquid, be additionally provided with an electroplate liquid recycling module in the periphery regional sustained recycling electricity of wafer
On the one hand plating solution maintains electroplate liquid electric field in preferable flow direction, keeps field distribution more average, another aspect sustainable utilization
Water flow, which is changed, to be replaced close to the electroplate liquid after surface has been reacted is plated, and makes crystal column surface electroplating thickness more uniform, and reliability is good,
Improve production efficiency.
Attached drawing and component symbol is cooperated to do more detailed description to embodiments of the present invention below, so as to be familiar with this skill
Skill person can implement accordingly after studying this specification carefully.
Detailed description of the invention
Fig. 1 is perspective view of the invention；
Fig. 2 is the partial cutaway perspective view of groove body of the invention
Fig. 3 is the top view of groove body of the invention:
Fig. 4 is the AA figure cross-sectional view of Fig. 3.
Fig. 5 is diagrammatic cross-section (one) of the electroplating tank structure of the present invention in running；
Fig. 6 is diagrammatic cross-section (two) of the electroplating tank structure of the present invention in running
Appended drawing reference is as follows:
1 groove body
11 outer tank bodies
12 inner tank bodys
121 the first side walls
122 second sidewalls
13 first slot rooms
14 second slot rooms
15 fluid reservoirs
16 three groove chamber
2 jet flow modules
21 cavitys
211 inlet openings
22 spurt holes
3 electroplate liquid recycling modules
31 first return ports
311 holes
32 second recovery holes
33 first delivery pipes
34 second delivery pipes
4 circulation supplying modules
41 liquid supply pipes
42 recovery tubes
43 pumps
5 wafer jigs
Specific embodiment
As shown in Figure 1, being respectively the perspective view of electroplating tank structure of the present invention.Electroplating tank structure of the present invention includes a groove body 1,
An at least jet flow module 2, at least an electroplate liquid recycling module 3 and the circulation being arranged outside the groove body 1 supply being set in slot
Module 4.The present invention focuses on the loop structure of the flowing of the electroplate liquid in electroplating bath, and needs in the plating process and wafer phase to be plated
The cathode electrode of connection and in the dependency structures such as anode electrode in electroplating bath all with existing identical, therefore no longer elaborate.
Function mode of the present invention are as follows: when the groove body 1 fills electroplate liquid, wafer to be plated can be dived by a wafer jig in vertical
It is dipped in the electroplate liquid in the groove body 1, which gushes out electroplate liquid in face of the continuous surface to be plated of the wafer, then due to
Be distributed in the electroplate liquid recycling module 3 of the periphery of the wafer, persistently recycle electroplate liquid, this can maintain electroplate liquid electric field in compared with
Good flow direction, and keep field distribution more uniform, the water flow in addition generated while can change are replaced close to being plated surface
Electroplate liquid after reaction, this makes crystal column surface electroplating thickness more uniform, and reliability is good, also can be reduced noble metal in electroplate liquid
Usage amount.The circulation supplying module 4 then there is pipeline to be connected with the jet flow module 2 and electroplate liquid recycling module 3, to recycle electricity
Plating solution recycling output uses, which can also filter or persistently add new electroplate liquid, with maintain electroplate liquid in
Preferable concentration.
The structure of each component makees a detailed description with that:
To accommodate electroplate liquid in the groove body 1, it is that wafer puts area 10 in middle section, only indicates brilliant in figure with imaginary line
Circle puts area 10, is actually additionally provided with wafer jig to clamp wafer, and wafer is made to be dipped in the slot in vertical is latent in plating
In electroplate liquid in body 1.In Fig. 1, actually the groove body 1 can accommodate one group of wafer jig simultaneously in each clamping of left and right sides difference
One wafer, and the surface of each wafer Naked dew is electroplated, to improve production efficiency, therefore electroplating tank structure of the present invention is
It adopts bilateral symmetry mode to design, as soon as actually also only a wafer can be electroplated, subsequent only single side structure is explained.Please
Join Fig. 2, Fig. 3 and Fig. 4, partial cutaway perspective view, top view and the sectional view of groove body respectively of the present invention together.
The groove body 1 includes an outer tank body 11 and an inner tank body 12, and the height of the inner tank body 12 lower than outer tank body 11 and is located at
In its slot.At least one first slot room 13 and at least one second slot room 14 are formed between the outer tank body 11 and inner tank body 12.In this reality
It applies and is respectively provided with position opposite two the first slot rooms 13 and two the second slot rooms 14 in example.In addition the inner tank body 12 is by facing
Solid rectangular slot made of two the first side walls 121 in face and two second sidewalls 122 are surrounded, the first slot room 13 are in close proximity to
The first side wall 121, the second slot room 14 is then close to the second sidewall 122.The outer tank body 11 separately has a fluid reservoir 15, the storage
There is liquid chamber 15 hole 151 to be connected with the first slot room 13.The first slot room 13 and the fluid reservoir 15 are to put in wafer
Enter 12 initial stage of the inner tank body, the electroplate liquid of overflow is allowed to be stored in two Room spaces, prevents electroplate liquid from overflowing the outer tank body 11.In figure
Though the wall adjacent with the fluid reservoir 15 has a hole, it is additionally provided with pipe fitting in actual structure or valve is installed on this, with
Sharp subsequent recovery electroplate liquid.
In addition the overflow notch 1221 of multiple recess is additionally provided at the top of the second sidewall 122, which is
In the plating process, it can be flow in the second slot room 14 for extra electroplate liquid, and maintain liquid level close to the inner tank body 12
Apical margin but not spilling.In addition the outer tank body 11 separately has a closed three groove chamber 16, and the three groove chamber 16 is close to the inside groove
12 bottom of body.
The jet flow module 2 is mainly persistently to gush out electroplate liquid towards wafer direction.The jet flow module 2 is installed on the groove body 1
An inner vertical walls, be specifically affixed to the first side wall 121, which includes a cavity 21 and being distributed in it
Multiple spurt holes 22 on surface, the cavity 21 be in hollow and liquid can be accommodated, top have water inlet 211 can connecting pipe supply
Electroplate liquid injection.Multiple spurt holes 22, which are from bottom to top sequentially dispersed with and face the wafer, puts the surface to be plated of area 10,
Multiple spurt holes 22 are in the radial distribution of concentric in the present embodiment, and distributed areas and position correspond to wafer size.
Wherein the spurt hole 22 distribution concentric circles circle number and hole number and unlimited figure in form, can demand adjust again, such as
Enclose that number is more, and hole count and aperture are smaller etc., in addition the distribution mode of spurt hole 22 also unlimited concentric circles.The cavity 21 and spurt hole
22 all must be specially designed, and the flow velocity and direction for spraying the electroplate liquid for injecting the cavity 21 most through the spurt hole 22 afterwards all meet
Actual demand, though such as electroplate liquid persistently pour into the wafer and put area 10, water flow will not disturb excessively, it is ensured that electroplate liquid electricity
Field is in preferable flow direction, and field distribution is more uniform, promotes electroplating quality.
The electroplate liquid recycling module 3 is to recycle the electroplate liquid after reacting, and position is located in the groove body 1 and is distributed in
The wafer puts the periphery region in area 10, because can be there are many different modes, the present invention be only explained with regard to one of which.
The electroplate liquid recycling module 3 includes multiple taps and an at least delivery pipe, in the present embodiment includes two groups of different directions
Discharge mode.In the present embodiment, the electroplate liquid recycling module 3 include multiple first return ports 31, multiple second recovery holes 32,
At least one first delivery pipe 33 and at least one second delivery pipe 34.Wherein the first discharging modes be in two sides position, it is multiple
First return port 31 is from bottom to top sequentially distributed in the second sidewall 122, which is set to the second slot room 14
Interior, which has multiple first return ports 331, the shape of first return port 331 and distribution side
Formula is not limited, such as hole shape can be circular hole, strip hole, square hole etc., though in addition first delivery pipe 33 is only seen in figure
One row of longitudinal direction, first return port 331 is indeed provided with longitudinal four rows, and is distributed in first delivery pipe 33 in angularly part
Tube wall, but be also not limited thereto, the hole count of longitudinal number of rows and distribution, all it can adjust and change according to actual demand.This
The position of one delivery pipe 33 correspond to multiple first return ports 31, using first comb 33 through multiple first return ports 31,
Electroplate liquid after reaction is put the side direction discharge of 10 liang of area by the wafer by multiple first return ports 331.
In addition in other embodiments of the invention, the structure that can omit the second sidewall 122 utilizes first delivery pipe
It 33 and is distributed first return port 331 on its surface and is expelled directly out electroplate liquid.
Second of discharging modes is bottom discharge mode, and multiple second return ports 32 are distributed in 12 bottom of inner tank body, position
Set the lower zone for corresponding to the periphery that the wafer puts area 10.Second return port 32 is connected to space in the inner tank body 12
And three groove chamber 16, second delivery pipe 34 are located in the second slot room 16, one end has opening 341, thus using this
Electroplate liquid is discharged by lower section through multiple second return ports 32 for two combs 34.
As shown in Figure 1, the Xun ring supplying module 4 is set to outside the groove body 1, to recycle supply electroplate liquid to the groove body
1, which includes an at least liquid supply pipe 41, at least a recovery tube 42 and pump 43, which is to be connected to
At the cavity 21 of the jet flow module 2, with lasting injection electroplate liquid.41 end of liquid supply pipe is to be connected to the cavity in this embodiment
2 tops, but be not limited thereto, it also may connect to 2 side wall of cavity or bottom position, then extend out by the wall of groove body 1,
This mode is notably sealed effect, facilitates and closes the 2 top surface space of groove body.The recovery tube 42 is to be connected to electroplate liquid recycling module
3 the first delivery pipe 33 and the second delivery pipe 34, to recycle the electroplate liquid.In figure and it is not drawn into pipeline structure interconnected,
Because such pipeline connecting mode to it is existing similar, such as connected by three-dimensional communicating pipe and multiple pipe fittings, therefore no longer in detail
It describes in detail bright.The pump 43 is connected to the recovery tube 42 and liquid supply pipe 41 can be continuously circulated recycling and supply electroplate liquid to the groove body 1.?
Independent control is additionally provided in the pipeline that the first delivery pipe 33 of this in the present embodiment, the second delivery pipe 34 are connected with recovery tube 42
Valve, more accurately to control the flow velocity in removal process.The pipeline that the liquid supply pipe 41 is connect with the cavity 21 in the same manner also has solely
Vertical control valve, accurately to control pressure and flow during feed flow, and then when ensuring to be electroplated, electroplate liquid field distribution is more
It is uniform.In addition the Xun ring supplying module 4 can also be equipped with filter device, filtering the impurity in electroplate liquid, or include electric
Liquid supplementing device is plated, is adjusted in due course according to the concentration of electroplate liquid to optimum state.
The mode of overall operation of the present invention is described with that, as shown in Figures 5 and 6, respectively longitudinal different angle
Diagrammatic cross-section, which is not drawn with sectional view, other two wafer is to be fixed in a wafer jig respectively
5 two opposite faces, are described as follows:
Inner tank body 12 in the groove body 1 fills electroplate liquid, which is dipped in the inner tank body 12 in vertical is latent
In electroplate liquid, the extra first overflow of electroplate liquid meeting to the first slot room 13.In addition related electrode all with connection after the completion of, the jet flow
Module 2 gushes out electroplate liquid in face of the continuous surface to be plated of wafer.It can be via first reflux in the electroplate liquid of wafer two side areas
Hole 31 is persistently recycled with first delivery pipe 33, and the electroplate liquid of Yu Jingyuan lower zone is then by the second discharge of the second return port 32
Pipe 34 persistently recycles, and the direction of electroplate liquid electrical field-flow is thus kept, to keep field distribution more average.In addition the water generated
Stream also can be changed persistently for close to the electroplate liquid after surface has been reacted is plated, this makes crystal column surface electroplating thickness more uniform, subtracts
The usage amount of few noble metal, raising reliability is good, and production efficiency is also synchronous to be improved.In addition the circulation supplying module 4 then has pipe
Road is connected with the jet flow module 2 and electroplate liquid recycling module 3, is used with recycling electroplate liquid recycling output, ensures electricity at any time
The concentration of plating solution.Therefore the electroplating activity carried out with electroplating bath of the present invention, high production efficiency, the uniformity and reliability
It is good, hence it is evident that be better than existing mode, meet the application important document of patent.
As described above is only to be not intended to do any shape to the present invention accordingly to explain presently preferred embodiments of the present invention
Limitation in formula, therefore, it is all have make any modification or change for the present invention under identical spirit, should all wrap
It includes the invention is intended to the scopes of protection.
Claims (9)
1. a kind of electroplating tank structure, comprising:
One groove body can accommodate electroplate liquid in slot, and middle section is that wafer puts area, be dipped in wafer in vertical type is latent
In electroplate liquid；
An at least jet flow module, is installed on the inner vertical walls of the groove body, and the jet flow module is including a cavity and is distributed in its surface
Multiple spurt holes, multiple spurt holes from bottom to top sequentially distribution and facing to the wafer put area；
One electroplate liquid recycling module is installed in the groove body and puts the periphery region in area, lasting recycling electricity in the wafer
Plating solution；
One Xun ring supplying module, is set to outside the groove body, which includes an at least liquid supply pipe, at least a recovery tube
And pump, the liquid supply pipe connect the jet flow module, which connects the electroplate liquid recycling module, which is connected to the recovery tube
And the liquid supply pipe can be continuously circulated recycling and supply electroplate liquid to the groove body.
2. electroplating tank structure as described in claim 1, wherein the electroplate liquid recycling module includes multiple first return ports and
One delivery pipe, first delivery pipe are from top to bottom dispersed with more first return ports.
3. electroplating tank structure as described in claim 1, wherein the groove body includes an outer tank body and an inner tank body, the inside groove position
In in the outer tank body and height it is lower, at least one first slot room and at least one second slot are formed between the outer tank body and inner tank body
Room, the inner tank body are solid slot made of being surrounded as aspectant two the first side walls and two second sidewalls, the first slot room
It is in close proximity to the first side wall, the second slot room is then close to the second sidewall.
4. electroplating tank structure as claimed in claim 3, wherein the outer tank body separately has a fluid reservoir, which has hole
It is connected with the first slot room.
5. electroplating tank structure as claimed in claim 3, wherein separately with the overflow notch of multiple recess at the top of the second sidewall.
6. electroplating tank structure as claimed in claim 3, wherein the jet flow module is affixed to the first side wall, multiple jet flows
Hole is the radial distribution in concentric, and distributed areas and position correspond to wafer size.
7. electroplating tank structure as claimed in claim 3, wherein the electroplate liquid recycling module includes multiple first return ports and extremely
Few one first delivery pipe, multiple first return ports are from bottom to top sequentially distributed in the second sidewall, first delivery pipe setting
In in the second slot room, the first discharge pipe surface is longitudinal also with multiple first return ports.
8. electroplating tank structure as claimed in claim 3, wherein the electroplate liquid recycling module includes multiple second recovery holes and extremely
Few one second delivery pipe, multiple second return ports are distributed in the inner tank body bottom, and position corresponds to the wafer and puts area's circumference
The lower zone of periphery, the outer tank body separately have a closed three groove chamber, which is in close proximity to the inner tank body bottom, should
Second return port is connected to space and the three groove chamber in the inner tank body, which is located in the second slot room, can be discharged
The indoor electroplate liquid of third slot.
9. electroplating tank structure as claimed in claim 3, wherein the jet flow module has two groups, it is respectively arranged in the inner tank body
Two face-to-face the first side walls on.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810265892.6A CN110318086A (en) | 2018-03-28 | 2018-03-28 | Electroplating tank structure |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810265892.6A CN110318086A (en) | 2018-03-28 | 2018-03-28 | Electroplating tank structure |
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| CN110318086A true CN110318086A (en) | 2019-10-11 |
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| CN201810265892.6A Pending CN110318086A (en) | 2018-03-28 | 2018-03-28 | Electroplating tank structure |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112701072A (en) * | 2021-03-25 | 2021-04-23 | 西安奕斯伟硅片技术有限公司 | Wafer processing apparatus and wafer defect evaluation method |
| CN114775020A (en) * | 2022-04-21 | 2022-07-22 | 上海裕继金属制品有限公司 | Electroplating production equipment |
| CN116536739A (en) * | 2023-07-05 | 2023-08-04 | 江苏台祥自动化科技有限公司 | Hardware electroplating equipment |
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| CN202558955U (en) * | 2012-05-10 | 2012-11-28 | 吴燕 | Stirring assembly for printed circuit board or wafer electroplating device |
| CN103590092A (en) * | 2012-08-16 | 2014-02-19 | 盛美半导体设备（上海）有限公司 | Device and method used for electrochemical polishing/electroplating |
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