TWI606154B - Enhancement of electrolyte hydrodynamics for efficient mass transfer during electroplating - Google Patents

Description

Enhanced fluid dynamics for efficient mass transfer during electroplating [Reciprocal Reference of Related Applications]

US Provisional Patent Application No. 61/736,499 [Attorney Docket No. LAMRP015P], entitled "ENHANCEMENT OF ELECTROLYTE HYDRODYNAMICS FOR EFFICIENT MASS TRANSFER DURING ELECTROPLATING", filed on Dec. 12, 2012, which is incorporated herein by reference. This is incorporated by reference in its entirety for all purposes. This application is also a continuation of US Patent Application No. 13/893,242 [Attorney Docket No. NOVLP367X1], entitled "CROSS FLOW MANIFOLD FOR ELECTROPLATING APPARATUS", filed on May 13, 2013, U.S. Patent Application Part 13/893,242, part of US Patent Application No. 13/172,642 [Attorney Docket No. NOVLP367], entitled "CONTROL OF ELECTROLYTE HYDRODYNAMICS FOR EFFICIENT MASS TRANSFER DURING ELECTROPLATING", dated June 29, 2011 Continuation, U.S. Patent Application Serial No. 13/172,642, entitled "FLOW DIVERTERS AND FLOW SHAPING PLATES FOR ELECTROPLATING CELLS", US Provisional Patent Application No. 61/405,608, filed on October 21, 2010. No. NOVLP396P], US Provisional Patent Application No. 61/374,911 entitled "HIGH FLOW RATE PROCESSING FOR WAFER LEVEL PACKAGING", dated August 18, 2010 [Attorney Docket No. NOVLP367P], and July 2, 2010 U.S. Provisional Patent Application No. 61/361,333 [Attorney Docket No. NOVLP366P] entitled "ANGLED HRVA", which is based on its entirety and Purposes herein incorporated by reference. Further, U.S. Patent Application Serial No. 13/893,242, entitled "CROSS FLOW MANIFOLD FOR ELECTROPLATING APPARATUS", US Provisional Patent Application No. 61/646,598 [Attorney Docket No. NOVLP367X1P] Priority is hereby incorporated by reference in its entirety for all purposes.

The present invention relates to a method and apparatus for controlling the fluid dynamics of an electrolyte during electroplating.

The disclosed embodiments are directed to methods and apparatus for controlling the fluid dynamics of an electrolyte during electroplating. More specifically, the methods and apparatus described herein are particularly useful for electroplating metals onto semiconductor wafer substrates, particularly those having a plurality of recessed features. The example program and features can include small microbump features (eg, copper, nickel, tin, and tin alloy solder) having a width less than, for example, about 50 μm , and through-lights with copper through-through via (TSV) features. Resistance plating.

In the modern integrated circuit manufacturing, the electrochemical deposition process system has been fully established. The transition from aluminum to copper wire connections in the early 21st century has driven the need for more complex electrodeposition processes and plating tools. Much of this complexity has evolved from the need for smaller current carrying lines in the metallization layer of the component. These copper wires are formed by electroplating metals into very fine, high aspect ratio trenches and vias in a methodology commonly referred to as "insert" processing (metallization prior to passivation).

At present, electrochemical deposition has been able to meet the commercial requirements for complex packaging and multi-chip interconnect technology, which are commonly and verbatim in wafer level package (WLP) and through through via (TSV) electrical connection technology. know. Some of these techniques present themselves with significant challenges due to the overall larger feature size (as compared to Front End Process (FEOL)) and high aspect ratio.

Depending on the type and application of the package features (eg, TSV through wafer connections, interconnect rewiring wiring, or wafer-to-board or wafer-to-wafer bonding such as flip chip), the features of the plating are typically found in the art. It is greater than about 2 microns and is typically from about 5 to 100 microns in its major dimension (e.g., the copper pillar can be about 50 microns). For some on-wafer configurations like power busses, the features to be plated can be greater than 100 microns. Although the aspect ratio of the WLP features can be as high as about 2: 1, which is typically less than about 1:1 (height to width); and the TSV structure can have a very high aspect ratio (e.g., close to about 20: 1).

A series of special problems arise when the WLP structure size is reduced from 100-200 μm to less than 50 μm (for example 20 μm), because at this size, the size of the feature and the typical mass transfer boundary layer thickness (to a flat surface) The distance in which the convection transmission takes place is almost equal. For previous generations with larger features, the convection of fluid and mass into the feature The delivery system is implemented by a general flow field penetration feature, but with a smaller feature, the formation of flow vortices and stagnation can inhibit both the rate and uniformity of mass transfer within the growing feature. Therefore, there is a need for a new method of producing a strong uniform mass transfer in the smaller "microbumps" and TSV features.

Not only the feature size, but also the plating speed makes WLP and TSV applications different. Mosaic application. For many WLP applications, depending on the plating metal (eg copper, nickel, gold, silver solder, etc.), there is a balance between one aspect of manufacturing and cost requirements and another aspect of the technical requirements and technical difficulties (eg With wafer pattern variability and on-wafer requirements (such as capital incapacity and within feature targets). For copper, this balance is typically achieved at a rate of at least about 2 microns per minute, and typically at least about 3-4 microns per minute. For electroplating tin and tin alloys, plating rates greater than about 3 [mu]m/min and, for some applications, at least about 7 [mu]m/min may be required. For nickel or flash gold plating (e.g., a low concentration gold flash film layer), the plating rate can be between about 0.1 and 1.5 μm/min. At these higher metal-related plating rates, efficient mass transfer of metal ions from the electrolyte to the plated surface is of importance.

In several embodiments, the plating must be in a highly uniform manner throughout the entire surface of the wafer. Performing a good uniform plating in the wafer (WIW uniformity), in all features of a particular die or between features (WID uniformity), and also in individual features (WIF uniformity) degree. The high plating rates of WLP and TSV applications present challenges in the uniformity of the electrodeposited layer. For different WLP applications, the plating must exhibit up to about 5% of the full-scale variation along the wafer surface in the radial direction (referred to as WIW non-uniformity for the grain at multiple locations across the wafer diameter) Single feature type in the measurement). Similar equally challenging requirements are uniform deposition (thickness and shape) of different features of different sizes (eg, feature diameters) or feature densities (eg, isolated or embedded features in the center of the wafer die array). This performance specification is often referred to as WID non-uniformity. The WID non-uniformity is measured as a local variation of different feature types as described above (eg, <5% full-length) relative to the particular grain location on the wafer (eg, at the center, center, or edge of the radius) Average feature height or other dimensions within the wafer grain.

Another challenging requirement is the overall control of the shape within the feature. In the absence of appropriate In the case of flow and mass transfer convection control, it may evolve to become inclined (eg, saddle or dome) in a concave, flat or convex manner in two or three dimensions after plating lines or columns. A flat profile, although not always, is usually preferred. In the face of these challenges, WLP applications need to compete with conventional, potentially less expensive, pick and place sequence routing operations. Still further, electrochemical deposition for WLP applications may involve plating different non-copper metals, such as solders such as lead, tin, tin-silver, and others such as nickel, cobalt, gold, platinum, and the like. An under bump metallization (UBM) material of an alloy, some of which contains copper. Electroplating of tin-silver near-eutectic alloys is an example of electroplating techniques for electroplated alloys as lead-free solder substitutes for lead-tin eutectic solders.

Embodiments herein relate to methods and apparatus for electroplating materials onto substrates. Roughly The disclosed technology relates to the use of an improved channel ion impedance element having a plurality of perforations adapted to provide ion transport through the plate, and a series of protrusions to improve plating uniformity or a step. In one embodiment of the embodiment, an electroplating apparatus is provided comprising: (a) an electroplating chamber configured to contain an electrolyte and an anode while simultaneously electroplating the metal onto a substantially flat substrate; (b) configured to hold substantially a substrate holder that flattens the substrate such that the plated side of the substrate is separated from the anode during plating; (c) an ion impedance element comprising: (i) extending through the ion impedance element and for plating Providing a plurality of channels for ion transport through the ion impedance element; (ii) facing the substrate side substantially parallel to the plated surface of the substrate and separated from the plated surface of the substrate by a gap; and (iii) positioning a plurality of protrusions on the side of the substrate facing the substrate; (d) an inlet for directing the flowing electrolyte to the gap; and (e) for accepting flow in the gap An outlet of the cross-flowing electrolyte leading to the gap, wherein the inlet and outlet are positioned adjacent to the circumferential position of the plated surface of the substrate during plating.

In some embodiments, when the plating surface and the ion impedance component are on the substrate During the inter-measurement, the gap between the substrate-side side of the ion-impedance element and the plated surface of the substrate is less than about 15 mm. In some cases, the gap between the plated face of the substrate and the uppermost portion of the projection is between about 0.5 and 4 mm. In some cases, the protrusions can have a height of between about 2-10 mm. In various embodiments, on average, the projections are oriented substantially perpendicular to the direction of the electrolyte flowing across. One, or more, or the owner of the protrusions can have a length to width aspect ratio of at least about 3:1. In various embodiments, the protrusions are plated with the substrate The faces are essentially extended together.

Many different protrusion shapes can be used. In some cases, ion impedance components There are at least two protrusions of different shapes and/or sizes. The one or more protrusions can include an electrolyte flowing through the gap during electroplating. The projections can be shaped to be generally rectangular, or shaped into a triangle, or shaped into a cylinder, or some combination of the above. The projections can also have more complex shapes, such as generally rectangular projections with differently shaped indentations along the top and bottom of the projection. In some cases, the protrusion has a triangular upper portion. An example is a rectangular protrusion with a triangular tip. Another example is a protrusion with the entire triangular shape.

The protrusions may be at a vertical angle, or at a non-perpendicular angle, or at a complex angle The combination extends upward from the channel ion impedance plate. In other words, in some embodiments, the protrusion comprises a face that is substantially perpendicular to the face of the ion impedance element. Alternatively or in addition, the protrusions may include faces that are offset from the surface of the ion impedance element by a non-orthogonal angle. In some embodiments, the projections are made from more than one segment. For example, the protrusion can include a first protrusion section and a second protrusion section, wherein the first and second protrusion sections are flowed from the intersection at substantially similar angles with opposite signs The direction of the electrolyte is deviated.

The ion impedance element can be configured to shape the electric field during plating and control the vicinity of the substrate Electrolyte flow characteristics. In various embodiments, the lower manifold region is positioned below the lower surface of the ion impedance element, wherein the lower surface faces away from the substrate holder. The central electrolyte chamber and one or more feed channels may be configured to supply electrolyte from the central electrolyte chamber to both the inlet and the lower manifold regions. In this manner, the electrolyte can be supplied directly to the inlet to initiate a cross flow over the channeled ion impedance element, and the electrolyte can be simultaneously supplied to the lower manifold region where the electrolyte will pass. A channel in the channel ion impedance element enters the gap between the substrate and the channel ion impedance element. The cross-flow injection manifold can be fluidly connected to the inlet. The cross-flow injection manifold can be defined at least in part by a cavity within the ion impedance element. In several embodiments, the cross-flow injection manifold is completely within the ion impedance element.

The flow confinement ring can be positioned above the surrounding portion of the ion impedance element. Flow limited ring Helps redirect the flow from the cross-flow injection manifold such that it flows in a direction parallel to the surface of the substrate. The apparatus may also include a mechanism to rotate the substrate holder during plating. In some embodiments, the inlet spans an arc between about 90-180° near the perimeter of the plated face of the substrate. Enter The port may contain other sections in the complex azimuth. The plurality of electrolyte feed inlets can be configured to supply the electrolyte to a different inlet section in the azimuth. Further, one or more flow control elements can be configured to independently control a plurality of electrolyte volumetric flow rates in the plurality of electrolyte feed inlets during plating. In various cases, the inlet and outlet may be used to create a cross-flowing electrolyte in the gap during plating to create or maintain shear forces on the plated side of the substrate. In several embodiments, the protrusions can be oriented in a plurality of parallel columns. The columns may include two or more discrete protrusions separated by a non-protruding gap, wherein the non-protruding gaps in adjacent columns are substantially out of alignment with each other in the direction of the cross-flowing electrolyte.

In another embodiment of the disclosed embodiment, an electroplating apparatus is provided, comprising: (a) Forming an electroplating chamber that houses the electrolyte and the anode while plating the metal onto the substantially flat substrate; (b) is configured to hold the substrate substantially flat such that the plated side of the substrate is separated from the anode during electroplating a substrate holder; (c) an ion impedance element comprising: (i) a plurality of channels extending through the ion impedance element and for providing ion transport through the ion impedance element during electroplating; (ii) a step substantially parallel to the plating surface of the substrate and spaced apart from the plating surface of the substrate by a gap; and (iii) a step positioned on the substrate-facing side of the ion impedance element, wherein The step portion has a height and a diameter, wherein the step portion has a diameter substantially coextensive with the plating surface of the wafer, and wherein the height and diameter of the step portion are small enough to allow the electrolyte to be held on the substrate during electroplating Flowing under the device, flowing over the step and into the gap; (d) an inlet for introducing the electrolyte to the gap to the gap; and (e) for accepting electrolysis flowing in the gap Of the gap leading to the outlet, wherein the inlet and outlet line for generating a cross-flow of the electrolyte in the gap is generated during electroplating or shear force is maintained at the plating surface of the substrate.

Provided in a plating apparatus for further implementation in a further embodiment of the disclosed embodiment The material is plated to a channel ion impedance plate on a standard diameter semiconductor wafer, the channel ion impedance plate comprising: a plate that is nearly coextensive with the plated surface of the semiconductor wafer, wherein the plate has a diameter of between about 2 and 25 mm Between the thicknesses; at least about 1000 non-communicating perforations extending through the thickness of the plate, wherein the perforations are used to provide ion transport through the plate during electroplating; and positioned on one side of the plate Multiple protrusions.

In another embodiment of the disclosed embodiment, an apparatus for plating is provided to material A channel ion impedance plate plated onto a standard diameter semiconductor wafer with a channel ion impedance The board includes: a board that extends substantially coextensively with the plated side of the semiconductor wafer, wherein the board has a thickness of between about 2-25 mm; at least about 1000 non-connected perforations extending through the thickness of the board, Wherein the perforations are used to provide ion transport through the plate during electroplating; and a step comprising a raised portion of the plate in a central region of the plate; non-lifting of the plate positioned around the plate unit.

A plating method for a substrate is provided in a further embodiment of the disclosed embodiment, The method comprises: (a) receiving a substantially flat substrate in the substrate holder, wherein the plating surface of the substrate is exposed, and wherein the substrate holder is configured to hold the substrate such that the plating surface of the substrate is plated during the plating Separating; (b) immersing the substrate in an electrolyte, wherein a gap is formed between the plating surface of the substrate and the surface of the ion impedance element, wherein the ion impedance element and the plating surface of the substrate are at least approximately coextensive, Wherein the ion impedance element is configured to provide ion transport through the ion impedance element during electroplating, and wherein the ion impedance element comprises a plurality of protrusions on a side of the substrate facing the substrate, the plurality of protrusions and the substrate The electroplated surface is substantially coextensive; (c) causing the electrolyte to flow in contact with the substrate in the substrate holder in the following manner: (i) from the side inlet, into the gap, and out of the side outlet, and (ii) From the ion impedance element, through the ion impedance element, into the gap, and out of the side outlet, wherein the inlet and outlet are designed or configured to be in the plating period An electrolyte that cross-flows in the gap; (d) rotates the substrate holder; and (e) electroplates the material onto the plating surface of the substrate while flowing the electrolyte as in (c).

In some embodiments, the amount is between the plating surface of the substrate and the surface of the ion impedance component When measuring, the gap is less than about 15 mm. The gap between the plated surface of the substrate and the uppermost surface of the protrusion is between about 0.5 and 4 mm. In several embodiments, the side inlets may be divided into two or more azimuthal and fluidly separated sections, and the electrolyte flows entering the azimuths of the inlets may be independently controlled. In some cases, the flow directing element can be positioned in the gap. The flow directing element can cause the electrolyte to flow from the side inlet to the side outlet in a substantially linear flow path.

In another embodiment of the disclosed embodiment, a plating method for a substrate is provided, The method comprises: (a) receiving a substantially flat substrate in the substrate holder, wherein the plating surface of the substrate is exposed, and wherein the substrate holder is configured to hold the substrate such that the plating surface of the substrate is plated during the plating Separating; (b) immersing the substrate in an electrolyte, wherein a gap is formed between the plating surface of the substrate and the surface of the ion impedance element, wherein the ion impedance element and the electricity of the substrate The plated surface is at least approximately coextensive, wherein the ion impedance element is configured to provide ion transport through the ion impedance element during electroplating, and wherein the ion impedance element includes a step on a substrate facing side of the ion impedance element, a step portion is positioned in a central region of the ion impedance element and surrounded by a non-lifting portion of the ion impedance element; (c) causing the electrolyte to flow in contact with the substrate in the substrate holder in the following manner: (i Passing from the side inlet, over the step, into the gap, again over the step, and out of the outlet, and (ii) from below the ion impedance element, through the ion impedance element, into the gap, over the step And exiting the side outlet, wherein the inlet and outlet are designed or configured to create a cross-flowing electrolyte in the gap during plating; (d) rotating the substrate holder; and (e) plating the material to The plating surface of the substrate simultaneously flows the electrolyte as in (c).

These and other technical features are described below with reference to the related drawings.

100‧‧‧ Equipment

101‧‧‧ components

102‧‧‧ cup

103‧‧‧ cone

104‧‧‧ pillar

105‧‧‧ boards

106‧‧‧ shaft

107‧‧‧Motor

108‧‧‧ screws

109‧‧‧Installation bracket

111‧‧‧Wafer Holder

113‧‧‧Drive cylinder

115‧‧‧ board

117‧‧‧ board

119‧‧‧ pivot joint

121‧‧‧Pivot joint

142‧‧‧ front side

143‧‧‧ Lip seal

145‧‧‧ wafer

149‧‧‧ Sealing Department

150‧‧‧Channel ion impedance plate (CIRP)

151‧‧‧Protruding

155‧‧‧ plating bath

160‧‧‧Anode

202‧‧‧ film

206‧‧‧With channel ion impedance plate (CIRP)

208‧‧‧Channel ion impedance plate (CIRP) manifold, lower manifold

210‧‧‧ Limit ring

218‧‧‧Fixed parts

222‧‧‧ Crossflow Injection Manifold

226‧‧‧cross flow manifolds, gaps

234‧‧‧Export

238‧‧‧Close mat

242‧‧‧Sprinkler

246‧‧‧ holes

250‧‧‧ entrance

254‧‧‧Retainer (cup)

258‧‧‧ channel

262‧‧‧ channel

266‧‧‧Fins

270‧‧‧Fluid adjustment rod

274‧‧‧Film frame

278‧‧‧ screw holes

282‧‧‧堰

325‧‧ ‧ flow steering

410‧‧‧Channel ion impedance plate (CIRP), manifold plastic plate

710‧‧‧ drool

710a‧‧‧ drool

725‧‧‧ Equipment

735‧‧‧Support components

740‧‧‧ film

902‧‧‧Steps

904‧‧‧ Fluid gap

906‧‧‧ Lip seal

908‧‧‧Protruding

910‧‧‧ hole

912‧‧‧ gap

914‧‧‧Channel ion impedance plate (CIRP) surface

921‧‧ ‧ gap

922‧‧‧ gap

Section 931‧‧‧

Section 932‧‧‧

A‧‧‧distance

B‧‧‧distance

C‧‧‧distance

D‧‧‧distance

E‧‧‧distance

F‧‧‧distance

G‧‧‧distance

W‧‧‧ wafer surface

H‧‧‧height

I‧‧‧thickness

J‧‧‧height

K‧‧‧ length

M‧‧‧ Height

N‧‧‧ length

Distance p‧‧‧

Q‧‧‧distance

R‧‧‧ Height

S‧‧‧ Height

T‧‧‧ angle

U‧‧‧ angle

1A shows an isometric view of a channeled ion impedance plate having a plurality of protrusions thereon, in accordance with several embodiments.

Figure 1B shows a perspective view of a substrate holding and positioning apparatus for electrochemically processing semiconductor wafers.

1C is a cross-sectional view of a portion of a substrate holding assembly including a cone and a cup.

FIG. 1D illustrates a simplified diagram of a plating bath that can be used to perform the embodiments herein.

2 shows an exploded view of different parts of an electroplating apparatus that is typically present in a cathode chamber in accordance with several embodiments disclosed herein.

3A shows an enlarged view of the cross flow side inlet and surrounding hardware in accordance with several embodiments herein.

3B shows an enlarged view of a cross-flow outlet, a CIRP manifold inlet, and a surrounding hardware in accordance with various disclosed embodiments.

4 is a cross-sectional view showing different parts of the plating apparatus shown in FIGS. 3A-B.

Figure 5 shows a cross-flow injection manifold and showerhead divided into six individual sections, in accordance with several embodiments.

Figure 6 shows a top view of a CIRP and associated hardware in accordance with embodiments herein, with particular focus on the inlet side of the crossflow manifold.

Figure 7 shows a simplified top view of CIRP and related hardware, which shows different exposures The inlet and outlet sides of the cross flow manifold of the embodiment.

8A-B illustrate a design of a crossflow inlet region in accordance with several embodiments.

Figure 9 shows a cross-flow entry area depicting several related geometries.

Fig. 10A shows a cross flow inlet region in which a channel ion impedance plate having a step portion is used.

Figure 10B shows an example of a channeled ion impedance plate with steps.

Figure 11 shows a cross-flow inlet region in which a channel ion impedance plate having a series of protrusions is used.

Figure 12 shows an enlarged view of a channeled ion impedance plate with protrusions.

Figures 13 and 14 present different shapes and designs for the projections in accordance with several embodiments.

Figure 15 shows a projection with two different kinds of notches.

Figure 16 depicts a channeled ion impedance plate having projections of the type shown in Figure 15.

Figure 17 is a simplified top plan view of a channeled ion impedance plate having discontinuous projections separated by gaps within the column.

Figure 18 shows an enlarged cross-sectional view of a channeled ion impedance plate with protrusions.

Figure 19 shows a simplified top view of an embodiment with a channel ion impedance plate in which the protrusions are formed by a plurality of segments.

Figure 20 presents experimental data showing that the addition of protrusions on a channel ion impedance plate can promote more uniform plating by achieving smaller bump height thickness variations.

In the present application, terms such as "semiconductor wafer", "wafer", "substrate", "wafer substrate", and "partially manufactured integrated circuit" are used interchangeably. Those of ordinary skill in the art will understand that the term "partially fabricated integrated circuit" may refer to the germanium wafer during any of a number of integrated circuit fabrication stages on a germanium wafer. The following detailed description assumes that the invention is performed on a wafer. Semiconductor wafers often have diameters of 200, 300, or 450 mm. However, the invention is not so limited. The workpiece can be of different shapes, sizes, and materials. In addition to semiconductor wafers, other workpieces that can utilize the present invention include different objects such as printed circuit boards.

Numerous specific details are set forth in the description which follows. The disclosed embodiments may be practiced without some or all of these specific details. In other instances, well-known program operations have not been described in detail, and the disclosed embodiments are not unnecessarily obscured. Although the disclosed embodiments are described with respect to the specific embodiments, it is understood that the embodiments are not intended to be limited.

In the following discussion, when referring to the "top" and "bottom" features of the disclosed embodiments (or similar terms such as "upper" and "lower" features, etc.), "top" and " The term "bottom" is used for convenience only and represents only a single reference frame or execution framework of the present invention. Other configurations are possible, such as the top and bottom members being inverted relative to gravity and/or the top and bottom members becoming left and right or right and left members. Described herein are apparatus and methods for electroplating one or more metals onto a substrate. Embodiments in which the substrate is a semiconductor wafer are generally described; however, the invention is not so limited.

The disclosed embodiments include an electroplating apparatus configured for use in a method of controlling the hydrodynamics of the electrolyte during electroplating to obtain a highly uniform electroplated layer. In a particular embodiment, the disclosed embodiments utilize a stream that produces an impinging stream (a flow directed to or perpendicular to the surface of the workpiece) and a shear stream (sometimes referred to as a "crossflow" or with a surface parallel to the workpiece. Method and apparatus for combining speed streams).

The disclosed embodiment uses a channel ion impedance plate (CIRP) that provides a small channel (cross flow manifold) between the plated surface of the wafer and the top of the CIRP. CIRP provides a number of features, including 1) allowing ion current to flow from the anode that is normally below the CIRP to the wafer, 2) allowing fluid to flow upward through the CIRP and generally toward the wafer surface, and 3) limiting and preventing electrolyte flow. Move away from and leave the cross flow manifold area. The flow in the cross-flow manifold region consists of a fluid injected into the CIRP through the hole and a fluid entering from a cross-flow injection manifold that is typically located on the CIRP and on one side of the wafer.

In the embodiments disclosed herein, the top surface of the CIRP is modified to thereby improve the maximum deposition rate, and the uniformity of plating throughout the wafer face and within the plating features. Modifications on the top surface of the CIRP may take the form of steps or groups of protrusions. FIG. 1A provides an isometric view of a CIRP 150 having clusters of protrusions 151 thereon. These CIRP modifications are discussed in more detail below.

In several embodiments, the means for applying a cross-flow in the cross-flow manifold is, for example, with or adjacent a channel ion impedance element with appropriate flow directing and dispensing means Entrance. The inlet directs the catholyte that flows across the surface of the substrate facing the substrate with the channel ion impedance element. The entrance is asymmetrical in azimuth and partially follows the circumference of the channel ion impedance element. The inlet may include one or more gaps or cavities, such as a cross-flow injection manifold, positioned in a radially outer annular cavity with a channel ion impedance element. Other components are optionally provided for operation with the cross-flow injection manifold. These may include cross-flow injection flow dispensing showerheads, cross-flow confinement rings, and flow directing fins, which are further described below in conjunction with the drawings.

In several embodiments, the apparatus is configured to be oriented toward or perpendicular to the base during electroplating The flow of electrolyte in the direction of the plated face can produce an average flow rate of at least about 3 cm/s (e.g., at least about 5 cm/s or at least about 10 cm/s) when exiting the orifice with the channel ion impedance element. In several embodiments, the apparatus is configured to be about 3 cm/s or more (eg, about 5 cm/s or more, about 10 cm/s or more, about 15 cm/s or more, or about 20 cm/s) when generating a center point across the plating surface of the substrate. The above) operates on the average traverse of the electrolyte speed. In some embodiments, these flow rates (ie, the flow rate away from the pores of the ion-impedance element and the flow rate across the plated surface of the substrate) are suitable for use with an overall electrolyte flow rate of about 20 L/min and a diameter of about 12 吋. In the plating bath of the substrate. Embodiments herein may be performed using different substrate sizes. In some cases, the substrate has a diameter of about 200 mm, about 300 mm, or about 450 mm. Again, embodiments herein can be performed at many different overall flow rates. In several embodiments, the overall electrolyte flow rate is between about 1-60 L/min, between about 6-60 L/min, between about 5-25 L/min, or between about 15- Between 25L/min. The flow rate achieved during electroplating may be limited by a number of hardware limitations, such as the size and capacity of the pump used. Those of ordinary skill in the art will appreciate that the flow rate described herein can be higher when performing the disclosed techniques with larger pumps.

In some embodiments, the electroplating apparatus includes separate anode and cathode chambers, wherein there is a different electrolyte composition, electrolyte circulation loop, and/or fluid dynamics in each of the two chambers. An ion permeable membrane can be utilized to prevent direct convective transport of one or more components between the chambers (by mass movement of the stream) and maintain a desired separation between the chambers. The membrane blocks a large flow of electrolyte and excludes the transport of several species, such as organic additives, while selectively allowing ion transport such as only cations (cation exchange membranes) or only anions (anion exchange membranes). As a specific example, in some embodiments, the film comprises a cation exchange membrane NAFION ^(TM) from DuPont, Delaware Wilmington, or a related ion-selective polymer. In other cases, the membrane does not comprise an ion exchange material, but rather comprises a microporous material. The electrolyte in the cathode chamber is conventionally referred to as "catholyte" and the electrolyte in the anode chamber is referred to as "anolyte". The anolyte and catholyte often have different compositions, and the anolyte contains little or no plating additives (such as accelerators, inhibitors, and/or levelers), and the catholyte contains significant concentrations of these. Additives. The concentration of metal ions and acids also often varies between the two chambers. An example of an electroplating apparatus that includes a separate anode chamber is disclosed in U.S. Patent No. 6,527,920, issued on Nov. 3, 2000 [Attorney Docket No. NOVLP007], and U.S. Patent No. 6,821,407, issued on Aug. 27, 2002. </ RTI><RTIgt;</RTI><RTIgt;</RTI><RTIgt;</RTI><RTIgt;</RTI><RTIgt;</RTI><RTIgt;</RTI><RTIgt;

In some embodiments, the membrane does not necessarily comprise an ion exchange material. In some examples, The membrane system is made of a microporous material of polyether oxime produced by Koch Membrane of Massachusetts Wilmington. The most different type of film is available for inert anode applications such as tin-silver plating and gold plating, but can also be used for soluble anode applications such as nickel plating.

In several embodiments, and as described more fully elsewhere herein, cathodic electrolysis The liquid can flow through one of the two main paths in the cell. In the first path, the catholyte is fed into the manifold region below the CIRP and typically (but not necessarily) above the tank membrane and/or membrane frame holder (hereinafter referred to as the "CIRP Manifold Region") ). From the CIRP manifold area, the catholyte passes up through the different holes in the CIRP and into the CIRP-to-substrate gap (often referred to as the cross-flow area or cross-flow manifold area) to travel in the direction of the wafer surface. In the second cross-flow electrolyte feed path, the catholyte is fed into the region from one side of the cross-flow injection manifold region. The catholyte enters the gap from the cross-flow injection manifold into the CIRP to the substrate (ie, the cross-flow manifold) in which the catholyte flows across the surface of the substrate in a direction substantially parallel to the surface of the substrate.

Although some of the embodiments described herein can be used with different types of plating equipment, for the sake of simplicity and clarity, most of the examples will be related to wafer-facing "fountain" plating equipment. In such an apparatus, the workpiece to be plated (typically a semiconductor wafer in the example presented herein) typically has a substantially horizontal orientation (in some cases, the orientation is during a portion or throughout the plating process) A few degrees differ from the true level) and can be driven to rotate during electroplating, resulting in a substantially vertically upward convection pattern of the electrolyte. The integration of the mass of the impinging stream from the center of the wafer to the edge and the essentially higher tangential velocity of the wafer at its edge relative to its center creates a radially increasing shear (parallel to the wafer) flow velocity. An example of a member of the tank/device of the fountain plating category is the Sabre ^® Electroplating System manufactured by Novellus System Inc. of CA San Jose and available therefrom. In addition, the fountain plating system is disclosed in U.S. Patent No. 6,800,187 issued to Aug. 10, 2001 [Attorney Docket No. NOVLP020] and U.S. Patent No. 8,308,931 issued on November 7, 2008 [Attorney Docket No. NOVLP299] The description is hereby incorporated by reference in its entirety.

The substrate to be plated is substantially flat or substantially flat. As used here, with like The substrate which is a feature such as a groove, a through hole, or a photoresist pattern is considered to be substantially flat. These features are often on a microscopic scale, but this is not always the case. In many embodiments, one or more portions of the substrate surface can be shielded from exposure to the electrolyte.

The following description of Figure IB provides a non-limiting general background to assist in understanding The equipment and methods described. FIG. 1B provides a perspective view of a wafer holding and positioning apparatus 100 for electrochemically processing semiconductor wafers. Device 100 includes a wafer bonding member (sometimes referred to herein as a "grab" member). The actual grapple includes a cup 102 and a cone 103 that allow pressure to be applied between the wafer and the seal thereby securing the wafer in the cup.

The cup 102 is supported by a post 104 that is coupled to the top panel 105. Component This assembly (102-105) of 101 is driven by motor 107 via spindle 106. The motor 107 is attached to the mounting bracket 109. The spindle 106 transmits torque to the wafer (not shown in this figure) to allow for rotation during plating. A cylinder (not shown) within the shaft 106 also provides a vertical force between the cup and the cone 103 to create a seal between the wafer and the sealing member (lip seal) contained within the cup. For the purposes of this discussion, the components comprising components 102-109 are collectively referred to as wafer holders 111. Note, however, that the concept of "wafer holder" generally extends to different combinations and sub-combinations of components that engage the wafer and allow it to move and position.

The tilting assembly including the first plate 115 is coupled to the mounting bracket 109, and the first panel 115 is attached It is slidably coupled to the second plate 117. The drive cylinders 113 are connected to the plates 115 and 117 at the pivot joints 119 and 121, respectively. Thus, the drive cylinder 113 provides a force for sliding the plate 115 (and thus the wafer holder 111) across the plate 117. The distal end of the wafer holder 111 (i.e., the mounting bracket 109) moves along an arcuate path (not shown) defining the contact area between the board 115 and the board 117, and thus the wafer holder 111 is near The ends (i.e., the cup and cone assembly) are tilted on a virtual pivot. This allows the wafer to enter the plating bath at an oblique angle.

The entire device 100 is raised or lowered vertically by another actuator (not shown) to cause the crystal The proximal end of the circular holder 111 is immersed in the plating solution. Thus, the two-component positioning mechanism provides vertical movement along a trajectory perpendicular to the electrolyte and tilt movement (angled wafer impregnation capability) that allows for offset from the horizontal position of the wafer (parallel to the electrolyte surface) . A more detailed description of the mobility of the device 100 and related hardware is described in U.S. Patent No. 6,551,487 [Attorney Docket No. NOVLP022], which is hereby incorporated by reference. This is incorporated herein by reference in its entirety.

Note that device 100 is typically used with a specific plating bath that has a capacity A plating chamber for a nanoanode (such as a copper anode or a non-metallic inert anode) and an electrolyte. The plating bath may also include piping or piping connections for circulating electrolyte throughout the plating bath - and toward the electroplated workpiece. It may also include a membrane or other separator designed to maintain different electrolyte chemistry in the anode and cathode compartments. Alternatively, a method of transferring the anolyte to the catholyte or to the primary plating bath by a physical device, such as a direct pump or overflow tank containing a valve, may also be provided.

The following description provides more details of the cup and cone assembly of the grapple. Figure 1C is a section Portions of the assembly 101 including the cone 103 and the cup 102 are shown. Note that this figure is not intended to be a true depiction of the cup and cone product components, but rather as a modified version of the drawing for discussion purposes. The cup 102 is supported by the top plate 105 via the struts 104, and the struts 104 are attached via the screws 108. In general, the cup 102 provides a support on which the wafer 145 rests. The cup 102 includes an opening through which an electrolyte from the plating bath can contact the wafer. Note that wafer 145 has a front side 142 where it occurs for electroplating. The periphery of the wafer 145 rests on the cup 102. The cone 103 is pressed down on the back side of the wafer to hold it in place during plating.

In order to load the wafer into the 101, the cone 103 is drawn from its position via the rotating shaft 106. Raise until the cone 103 hits the top plate 105. The gap is created between the cup and the cone by this position, and the wafer 145 can be inserted into the gap and thus loaded into the cup. Next, the cone 103 is lowered to engage the wafer against the circumference of the cup 102 as illustrated, and with the set of electrical contacts radially outside the lip seal 143 along the periphery of the wafer (not Displayed at 1C) connection. In embodiments where a step or series of protrusions are used in a channel ion impedance plate (CIRP), the wafer can be inserted in a slightly different manner to avoid contacting the wafer or wafer holder with the CIRP. In this case, the wafer holder can first insert the wafer at an angle relative to the surface of the electrolyte. Next, the wafer holder can rotate the wafer to a horizontal position. As long as the CIRP is undisturbed, the wafer can be in it Rotate while continuing down into the electrolyte. The final portion of the wafer insertion can include inserting the wafer straight down. This straight downward movement can be completed once the wafer is at its horizontal position (ie, after the wafer has been tilted).

The shaft 106 transmits both a vertical force for engaging the cone 103 with the wafer 145 and a moment for rotating the assembly 101. These transmitted forces are represented by the arrows in Figure 1C. Note that the plating of the wafer typically occurs while the wafer is rotating (as indicated by the dashed arrows at the top of Figure 1C).

The cup 102 has a compressible lip seal 143 that forms a fluid-tight seal when the cone 103 is engaged with the wafer 145. The vertical force from the cone and wafer compresses the lip seal 143 to form a liquid-tight seal. The lip seal prevents the electrolyte from contacting the back side of the wafer 145 (the electrolyte can directly introduce contaminants such as copper or tin ions into the crucible on the back side) and contact sensitive components of the assembly 101. There may also be a seal between the cup and the interface of the wafer that forms a liquid-tight seal to further protect the back side of the wafer 145 (not shown).

The cone 103 also includes a seal 149. As shown, the sealing portion 149 is positioned adjacent the edge of the cone 103 and the upper portion of the cup when engaged. This also protects the back side of wafer 145 from any electrolyte that may enter the grab from above the cup. The seal 149 can be secured to the cone or cup and can be a single seal or a plurality of component seals.

At the beginning of the plating, the cone 103 is raised above the cup 102 and the wafer 145 is introduced into the cup 102. When the wafer is initially introduced into the cup 102 - typically by the robot arm - its front side 142 is gently resting on the lip seal 143. Assembly 101 is rotated during plating to assist in achieving uniform plating. In the subsequent figures, component 101 is depicted in a more simplified format and is related to the hydrodynamic components of the electrolyte that is controlled to the front side 142 during electroplating.

1D illustrates a cross-section of a plating apparatus 725 for plating metal onto a wafer 145 that is held, positioned, and rotated by assembly 101. Apparatus 725 includes a plating bath 155 that is a dual chamber tank having an anode chamber with, for example, a copper anode 160 and an anolyte. The anode and cathode chambers are separated by, for example, a cation membrane 740 supported by a support member 735. As described herein, electroplating apparatus 725 includes CIRP 410. Flow diverter 325 is attached to the top of CIRP 410 and assists in creating a traverse shear flow as described herein. The catholyte is introduced into the cathode chamber (above the membrane 740) via the orifice 710. From the orifice 710, the catholyte is passed through the CIRP 410 as described herein and produces an impinging stream onto the plated surface of the wafer 145. apart from In addition to the catholyte orifice 710, an additional orifice 710a introduces a catholyte at its outlet (at a location remote from the outlet of the gap/flow diverter 325). In this example, the outlet of the orifice 710a is formed as a channel in the manifold 101. The result of the functionality is that the catholyte flow system is introduced directly into the plating region formed between the front side of the CIRP 410 and the wafer 145 to enhance cross-flow across the wafer surface and thereby span the wafer 145 (and The flow vector of the flow plate 410) is normalized.

Numerous drawings are provided to further illustrate and illustrate the embodiments disclosed herein. apart from In addition to other things, the drawings contain different drawings of the structural elements and flow paths associated with the disclosed plating apparatus. These elements are assigned a number of name/reference numbers, which are used consistently in the description of Figures 2 through 19. 2 illustrates several components present in several embodiments, including a wafer holder 254, a crossflow confinement ring 210, a crossflow ring adhesion pad 238, and a channel ion impedance plate (CIRP) with a crossflow showerhead 242. 206, and a membrane frame 274 with a fluid adjustment rod 270. In Figure 2, these components are provided in an exploded view to show how the parts are joined together.

The following examples assume that the plating apparatus mostly contains separate anode chambers. The feature The part is contained in the cathode chamber. 3A, 3B and 4, the bottom surface of the cathode chamber contains the membrane frame 274 and membrane 202 separating the anode chamber from the cathode chamber (note that the membrane is not actually shown in the drawing due to its very thinness). Medium, but its position is shown to be located on the lower surface of the membrane frame 274). Any number of possible anode and anode chamber configurations can be utilized.

Most of the focus in the following description is in controlling the cross flow manifold or manifold region 226 On the catholyte. This cross-flow manifold region 226 may also be referred to as a gap or CIRP-to-wafer gap 226. Catholyte enters cross-flow manifold 226 through two separate inlet locations: (1) a channel in channel ion impedance plate 206 and (2) a cross-flow initiation structure 250. The catholyte system that reaches the cross-flow manifold 226 via the channels in the CIRP 206 is typically directed to the workpiece face in a substantially vertical direction. The catholyte thus supplied by the channel can form a small jet that impacts the surface of the workpiece, which is typically rotated slowly relative to the channel plate 206 (e.g., between about 1 and 30 rpm). Conversely, the catholyte that reaches the crossflow manifold 226 via the crossflow initiation structure 250 is directed substantially parallel to the workpiece face.

As indicated in the discussion above, a channel ion impedance plate 206 (sometimes referred to as a channel) Ion impedance components, CIRP, high-impedance virtual anodes or HRVA) are positioned between the working electrode (wafer or substrate) and the opposite electrode (anode) during plating to exhibit relatively close to the wafer interface Huge localized ion system resistance (and thereby controlling and shaping the electric field) and controlling the characteristics of the electrolyte flow. The different figures herein show the relative position of the channel ion impedance plate 206 relative to other structural features of the disclosed device. An example of such an ion-impedance element 206 is described in U.S. Patent No. 8,308,931, the entire disclosure of which is incorporated herein by reference. The channeled ion impedance plate described in U.S. Patent No. 8,308,931 is adapted to improve the radial plating uniformity on the surface of the wafer, such as those containing relatively low conductivity or containing very thin impedance seed layers. In many embodiments, the channeled ion impedance plate is adapted to include a step or series of protrusions as mentioned above or as further described below.

"Film frame" 274 (sometimes referred to as an anodic film frame in other documents) is in some A structural element in the embodiment for supporting a membrane 202 that separates the anode chamber from the cathode chamber. Membrane frame 274 can have other features associated with several embodiments disclosed herein. In particular, referring to embodiments of the drawings, it may include flow channels 258 and 262 for supplying catholyte to CIRP manifold 208 or to crossflow manifold 226. Further, the membrane frame 274 can include a showerhead plate 242 configured to supply a cross-flowing catholyte to the cross-flow manifold 226. The membrane frame 274 can also include a channel wall 282 that is useful in determining and regulating the uppermost orientation of the catholyte. Membrane frames 274 are depicted in different figures herein, alongside other structural features associated with the disclosed cross-flow devices.

The membrane frame 274 is a rigid structural member for holding the membrane 202, and the membrane 202 is typically An ion exchange membrane responsible for separating the anode chamber from the cathode chamber. As explained, the anode chamber can comprise an electrolyte having a first composition and the cathode chamber comprises an electrolyte having a second composition. The membrane frame 274 can also include a plurality of fluid adjustment rods 270 (sometimes referred to as beam elements) that can be used to help control fluid supply to the channel ion impedance elements 206. Membrane frame 274 defines the bottommost portion of the cathode chamber and the uppermost portion of the anode chamber. The components are all located on the workpiece side of the electrochemical plating bath above the anode chamber and anode chamber membrane 202. It can all be considered part of the cathode chamber. However, it should be understood that several embodiments of the cross-flow injection device do not utilize separate anode chambers, and thus the membrane frame 274 is not indispensable.

Typically located between the workpiece and the membrane frame 274 is a channel ion impedance plate 206, And a cross-flow ring adhesion pad 238 and a wafer cross-flow confinement ring 210 that are each attached to the channel ion impedance plate 206. More specifically, the cross-flow ring adhesion pad 238 can be positioned directly on top of the CIRP 206, and the wafer cross-flow confinement ring 210 can be positioned over the cross-flow ring adhesion pad 238 and attached to the The top surface of the channel ion impedance plate 206 effectively sandwiches the close pad 238. The different patterns herein show a cross-flow confinement ring 210 that is arranged relative to the channel ion impedance plate 206. Further, CIRP 206 can include a step or series of protrusions as explained further below.

As shown in FIG. 2, the top structural related feature of the present disclosure is a workpiece or wafer holder. In several embodiments, the workpiece holder can be commonly used in the cone and cup design of the clamshell type (such as the above mentioned, reflects the electroplated tools Sabre ^® from Lam Research Corporation in design) of the wafer holder 254. For example, Figures 2, 8A and 8B show the relative orientation of the cup 254 relative to other components of the device.

3A shows a cross-flow inlet side of an electroplating apparatus in accordance with an embodiment disclosed herein. An enlarged sectional view. Figure 3B shows an enlarged cross-sectional view of the cross-flow outlet side of the electroplating apparatus in accordance with an embodiment herein. 4 shows a cross-sectional view of a plating tool showing both the inlet and outlet sides in accordance with several embodiments herein. During the plating process, the catholyte fills and occupies the area between the top of the membrane 202 on the membrane frame 274 and the membrane frame wall 282. The catholyte region can be divided into three sub-regions: 1) under the CIRP 206 and (for the design of the anode chamber cation membrane) a channel ion impedance plate manifold above the cation membrane 202 of the separate anode chamber Region 208 (this element is sometimes referred to as lower manifold region 208), 2) crossflow manifold region 226 between the wafer and the upper surface of CIRP 206, and 3) outside the grab/cup 254 and in the slot An upper trough region or an "electrolyte containment region" (which is sometimes a physical part of the membrane frame 274) inside the body wall 282. The second and third regions merge into a single region when the wafer is not impregnated and the grab/cup 254 is not in a lowered position.

FIG. 3B shows a cross-sectional view of a single inlet aperture fed into the CIRP manifold 208 through the passage 262. The dashed line indicates the path of the fluid flow.

The catholyte can be supplied to the plating bath at a central catholyte inlet manifold (not shown), which can be located at the tank base and fed in a single line. From here, the catholyte can be separated into two different flow paths or streams. One stream (e.g., six of the twelve feeder holes) causes catholyte to flow through the passage 262 into the CIRP manifold region 208. After the catholyte is supplied to the CIRP manifold 208, it passes upward through the microchannels in the CIRP and into the crossflow manifold 226. Another stream (e.g., another 6 feeder holes) causes the catholyte to flow into the cross-flow injection manifold 222. From there, the electrolyte passes through the dispensing orifices 246 of the cross-flow showerhead 242 (in several embodiments, the number can exceed about 100). After leaving the crossflow sprinkler hole 246, the cathode The flow direction of the electrolyte is converted from (a) orthogonal to the wafer to (b) parallel to the wafer. This change in flow direction occurs when the flow impinges on and is limited by the surface of the inlet cavity 250 of the cross-flow confinement ring 210. After entering the cross-flow manifold region 226, the two catholyte streams that were initially separated at the center of the tank base are finally rejoined.

In the embodiment shown in Figures 3A, 3B and 4, the catholyte entering the cathode chamber A portion of it is supplied directly to the channel ion impedance plate manifold 208 and a portion is directly supplied to the cross flow injection manifold 222. At least a portion (and often, but not always all) of the catholyte supplied to the channeled ion impedance plate manifold 208 passes through different microchannels within the plate 206 and reaches the crossflow manifold 226. The catholyte entering the cross-flow manifold 226 through the passage in the channel ion impedance plate 206 acts as a substantially vertically guided jet (in some embodiments, the channel is made at an angle, so it is not completely Forward to the wafer surface, for example, the jet angle can be up to about 45 degrees relative to the wafer surface, and enter the crossflow manifold. This portion of the catholyte entering the cross-flow injection manifold 222 is supplied directly to the cross-flow manifold 226 that it enters as a horizontally-oriented cross-flow under the wafer. During its passage to the crossflow manifold 226, the cross-flowing catholyte passes through the cross-flow injection manifold 222 and the cross-flow showerhead plate 242 (in a particular embodiment, it comprises about 139 having about 0.048" The diameter of the dispensing aperture 246), and then the flow/geometry of the inlet cavity 250 of the cross-flow confinement ring 210 is redirected from a vertical upward flow to a flow parallel to the wafer surface.

The absolute angle of the cross flow and the jet flow need not be positive or vertical or even with each other Oriented to be positive 90°. However, in general, the cross flow of the catholyte in the cross flow manifold 226 is substantially along the direction of the workpiece surface, and the direction of the catholyte jet exiting the top surface of the microchannel ion impedance plate 206 is substantially The upper surface flows toward the workpiece/perpendicular to the surface of the workpiece. This mixture of cross-flow and impinging streams on the wafer helps promote more uniform plating results. The protrusions are used in several embodiments to help interfere with the cross-flowing electrolyte, causing it to be redirected toward the wafer surface.

As mentioned, the catholyte entering the cathode chamber is distributed as (i) from the channel Sub-impedance plate manifold 208, through the channels in CIRP 206, and then into the catholyte of cross-flow manifold 226 and (ii) into cross-flow injection manifold 222, through holes 246 in showerhead 242, And then enter the catholyte of the crossflow manifold 226. Flow directly from the cross-flow injection manifold region 222 may enter via a cross-flow confinement ring inlet (sometimes referred to as a cross-flow side inlet 250) and is flat Walk on the wafer and exit from one side of the tank. Conversely, fluid jets entering the crossflow manifold region 226 via the microchannels of CIRP 206 enter from below the wafer and below the crossflow manifold 226, and the jet flow regime is diverted (redirected) within the crossflow manifold 226. Parallel to the wafer and flow toward the cross-flow confinement ring outlet 234 (sometimes referred to as a cross-flow outlet or outlet).

In a particular embodiment, there are six separate feed channels 258 for the catholyte Directly supplied to the cross-flow injection manifold 222 (where the catholyte is then supplied to the cross-flow manifold 226). To create cross-flows in the cross-flow manifold 226, the channels 258 form an outlet into the cross-flow manifold 226 in a non-uniformly azimuthal manner. In particular, these passages 258 enter the cross flow manifold 226 at a particular side or azimuthal region (eg, the inlet side) of the cross flow manifold 226.

In a particular embodiment, illustrated in Figure 3A, for supplying catholyte directly to The fluid path 258 of the cross-flow injection manifold 222 passes through four separate elements before reaching the cross-flow manifold 226: (1) a dedicated channel in the anode chamber wall of the tank, (2) a dedicated channel in the membrane frame 274, (3) Exclusive channels in the channel ion impedance element 206 (these exclusive channels are different from the 1-D microchannels used to supply the catholyte from the CIRP manifold 208 to the crossflow manifold 226), and finally (4) The wafer cross-flow restricts the fluid path in the ring 210. In the case where these elements are constructed differently, the catholyte may not flow through each of these separate elements.

As mentioned, the flow through the membrane frame 274 and fed into the cross-flow injection manifold 222 The portion of the path is referred to as the cross-flow feed channel 258 in the membrane frame. Likewise, the portion of the flow path through the membrane frame 274 and fed into the CIRP manifold is referred to as the cross-flow feed channel 262, or CIRP manifold feed channel 262, fed into the channel ion impedance plate manifold 208. In other words, the term "cross-flow feed channel" includes both the catholyte feed channel 258 fed into the cross-flow injection manifold 222 and the catholyte feed channel 262 fed into the CIRP manifold 208. A difference between these streams 258 and 262 is indicated above: the direction of the flow through CIRP 206 is initially directed to the wafer and then becomes parallel due to the presence of cross-flow in the wafer and cross-flow manifold. The wafer, while the cross-flow portion from the cross-flow injection manifold 222 and exiting the cross-flow confinement ring inlet 250 begins substantially parallel to the wafer in the cross-flow manifold. While not intending to adhere to any particular model or theory, the combination and mixing of this impact and parallel flow is believed to promote substantially improved flow penetration within the recessed/embedded features and thereby improve mass transfer. The inclusion of a series of protrusions on the surface of the CIRP further enhances this mixing. By creating a spatially uniform convective flow field beneath the wafer and rotating the wafer, each feature, and each die is exposed throughout the spin and plating process Almost the same flow pattern.

The flow path of the electrolyte supplying the cross flow as it passes through the intersection in the plate 206 Flow feed channel 258 begins in a vertically upward direction. This flow path then enters a cross-flow injection manifold 222 formed in the body of the channel ion impedance plate 206. The cross-flow injection manifold 222 is an azimuth cavity that can be a digging channel within the plate 206 that can direct fluid from different individual feed channels 258 (eg, from 6 individual cross-flow feed channels) Each) is supplied to a different plurality of flow distribution holes 246 of the cross-flow showerhead plate 242. This cross-flow injection manifold 222 is disposed along an angular section having a perimeter or edge region of the channel ion impedance plate 206. See, for example, Figures 3A and 4-6. Figures 3A and 4 are described above. FIG. 5 shows the showerhead plate 242 positioned above the cross-flow injection manifold 222. Figure 6 also shows the showerhead plate 242 above the cross-flow manifold 222, alongside other components of the electroplating apparatus.

In several embodiments, the cross-flow injection manifold 222 forms a surrounding area across the board A C-shaped structure at an angle of about 90-180 is shown in Figures 5 and 6. In several embodiments, the cross-flow injection manifold 222 has an angular extent between about 120-170°, and in a more particular embodiment between about 140-150°. In these or other embodiments, the cross-flow injection manifold 222 has an angular extent of at least about 90°. In many embodiments, the showerhead 242 encompasses approximately the same angular extent as the cross-flow injection manifold 222. Again, the entire inlet structure 250 (which in many cases includes one or more of the following: cross-flow injection manifold 222, sprinkler plate 242, sprinkler hole 246, and cross-flow confinement ring 210) The opening) can cover these same angular ranges.

In some embodiments, the cross-flow injection manifold 222 is in a channel ion impedance plate 206 A continuous fluid-connected cavity is formed therein. In this case, the owner of the cross-flow feed channel 258 fed into the cross-flow injection manifold forms an outlet into a continuous and connected cross-flow injection manifold chamber. In other embodiments, the cross-flow injection manifold 222 and/or the cross-flow showerhead 242 are separated into two or more angularly distinct or partially separate segments, as shown in FIG. 5 (shown 6 separate sections). In some embodiments, the number of angularly separated segments is between about 1-12, or between about 4-6. In a particular embodiment, each of the additional segments at these angles is fluidly coupled to a separate crossflow feed channel 258 disposed in the channeled ion impedance plate 206. Thus, for example, there may be six distinct and separate sub-regions within the cross-flow injection manifold 222, each of which is fed by a separate cross-flow feed channel 258. In several embodiments, each of these sub-regions of cross-flow injection manifold 222 has the same volume and/or the same The range of angles.

In many cases, the catholyte exits the cross-flow injection manifold 222 and passes through the There are a plurality of angularly separated catholyte outlets (holes) 246 that cross the sprinkler head plate 242. See, for example, Figures 2, 3A and 6 (catholyte outlet/hole 246 is not shown in all figures). For example, in several embodiments, the cross-flow showerhead plate 242 is integrated into the channeled ion impedance plate 206 as shown in FIG. In some embodiments, the showerhead plate 242 is glued, bolted, or otherwise secured to the top of the cross-flow injection manifold 222 with the channel ion impedance plate 206. In several embodiments, the top surface of the cross-flow showerhead 242 is flush with or slightly above the plane or top surface of the channel ion impedance plate 206 (without any steps or protrusions on the CIRP 206). In this manner, the catholyte flowing through the cross-flow injection manifold 222 can initially travel vertically through the showerhead aperture 246 and then travel laterally under the cross-flow confinement ring 210 and into the cross-flow manifold. Tube 226 is such that the catholyte enters cross-flow manifold 226 in a direction substantially parallel to the wafer surface. In other embodiments, the showerhead 242 can be oriented such that the catholyte exiting the showerhead aperture 246 has traveled in the direction of the parallel wafer.

In a particular embodiment, the cross-flow showerhead 242 has approximately 140 angular separations Catholyte outlet orifice 246. More generally, any number of holes that reasonably create a uniform cross flow within the cross flow manifold 226 can be utilized. In several embodiments, the cross-flow showerhead 242 has between about 50-300 such cathode electrolyte outlet holes 246. In several embodiments, there are such holes between about 100-200. In several embodiments, there are such holes between about 120-160. In general, the size of the individual ports or holes 246 may range in diameter from between about 0.020 to 0.10 Torr, and more specifically, between about 0.03 and 0.06 Torr.

In several embodiments, the holes 246 are angularly uniform (ie, holes) The spacing between 246 is determined by the fixed angle between the center of the tank and two adjacent holes) along the entire angular extent of the cross-flow showerhead 242. In other embodiments, the holes 246 are distributed along the angular extent in an angularly non-uniform manner. Nonetheless, in some embodiments, the angularly non-uniform hole distribution is a linear ("x-direction") uniform distribution. In other words, in the latter case, the hole distribution is such that if projected onto an axis perpendicular to the direction of the cross flow (the axis is in the "x" direction), the holes are spaced as far apart. Each of the holes 246 is positioned at the same radial distance from the center of the trough and is equidistant from the adjacent holes in the "x" direction. With these angles The net effect of the non-uniform holes 246 is that the overall cross-flow pattern is much more uniform. Conversely, where the holes are angularly evenly spaced, since the edge regions will have more holes required for a more uniform cross flow, the cross flow above the center portion of the substrate will be less than the cross flow above the edge regions.

In several embodiments, the direction of the catholyte exiting the cross-flow showerhead 242 The system is further controlled by a wafer cross-flow limited loop 210. In several embodiments, the ring 210 extends over the entire circumference of the channel ion impedance plate 206. In several embodiments, the cross-section of the cross-flow confinement ring 210 has an L-shape, as shown in Figures 3A, 3B, and 4. This shape can be selected to match the bottom surface of the substrate holder/cup 254. In several embodiments, the wafer crossflow confinement ring 210 includes a series of flow directing elements, such as directional fins 266 in fluid communication with the exit apertures 246 of the crossflow showerhead 242. Fins 266 are clearly shown in Figure 7, but can also be seen in Figures 3A and 4. The directional fins 266 define a substantially isolated fluid passage between the upper surface of the wafer cross-flow confinement ring 210 and adjacent directional fins 266. In some cases, the purpose of the fins 266 is to redirect the flow exiting the cross-flow showerhead aperture 246 from other different radially inward directions and to the "left to right" flow path (left is the entrance to the cross flow) Side 250, right is the exit side 234 of the cross flow. This helps to create a substantially linear cross-flow pattern. The catholyte exiting the aperture 246 of the cross-flow showerhead 242 is directed by the directional fins 266 along the flow lines created by the orientation of the directional fins 266. In several embodiments, all of the directional fins 266 of the wafer cross-flow confinement ring 210 are parallel to each other. This parallel alignment helps establish a uniform cross-flow direction within the cross-flow manifold 226. In various embodiments, the directional fins 266 of the wafer cross-flow confinement ring 210 are disposed along two sides of the inlet 250 and the outlet 234 of the cross-flow manifold 226. In other cases, the fins 266 may be disposed only along the inlet region 250 of the crossflow manifold 226.

As indicated, the catholyte flowing in the cross-flow manifold 226 leads from the inlet region 250 of the wafer cross-flow confinement ring 210 to the outlet side 234 of the ring 210, as shown in Figures 3B and 4. In several embodiments, there are a plurality of directional fins 266 on the exit side 234 that are parallel and aligned with the entrance side directional fins 266. The cross flow passes through the passage created by the directional fins 266 of the outlet side 234 and then passes outside of the cross flow manifold 226. The stream then enters the cathode chamber substantially radially outward and in another region outside of the wafer holder 254 and the cross-flow confinement ring 210, and the fluid is passed through the membrane frame before flowing over the crucible 282 for collection and recycling. The upper wall 282 is collected and temporarily retained. Therefore, it should be understood that the drawings (eg, Figures 3A, 3B, and 4) only show the in and out intersections. A partial path of the overall bypass of the catholyte of the manifold. Note that, for example, in the embodiment illustrated in Figures 3B and 4, the fluid exiting the cross-flow manifold 226 does not pass through the small hole or again through the passage similar to the feed channel 258 on the inlet side, but instead accumulates Moving outward in a direction substantially parallel to the wafer during the aforementioned accumulation region.

Returning to the embodiment of Figure 6, a top view of the cross-flow manifold 226 is shown looking downward. This figure depicts the location of the cross-flow injection manifold 222 with the embedded showerhead 242 within the channel ion impedance plate 206. Although the exit aperture 246 on the showerhead 242 is not shown, it is understood that there are such exit apertures. A fluid adjustment rod 270 for cross-flow injection manifold flow is also shown. The cross-flow confinement ring 210 is not installed in this illustration, but shows the contour of the cross-flow confinement ring seal mat 238 sealed between the cross-flow confinement ring 210 and the upper surface of the CIRP 206. Other components shown in Figure 6 include cross-flow confinement ring fixture 218, membrane frame 274, and screw holes 278 on the anode side of CIRP 206 (which may be used, for example, for a cathode shielding insert).

In some embodiments, the geometry of the cross-flow confinement ring outlet 234 can be adjusted, The cross flow pattern is further optimized. For example, the divergence of the cross-flow to the edge of the confinement ring 210 can be corrected by reducing the open area in the outer region of the cross-flow confinement ring exit 234. In several embodiments, the outlet manifold 234 can include separate portions or ports, much like the cross-flow injection manifold 222. In some embodiments, the number of outlet portions is between about 1-12, or between 4-6. The ports are separated in azimuth and occupy a different (usually adjacent) position along the exit manifold 234. The relative flow rate of each of the through ports can be independently controlled in some cases. This control can be achieved, for example, by using a lever 270 similar to the one described with respect to the inlet stream. In another embodiment, the flow through different portions of the outlet may be controlled by the geometry of the outlet manifold. For example, an outlet manifold with less open area near each side and more open area near the center would result in more flow leaving the solution near the exit center and less flow exiting near the exit edge. pattern. Other methods of controlling the relative flow rate through the port in the outlet manifold 234 (e.g., pumps, program control valves, etc.) may also be used.

As mentioned, a large amount of catholyte entering the catholyte chamber passes through the plural Channels 258 and 262 are separately introduced into cross-flow injection manifold 222 and channel ion impedance plate manifold 208. In several embodiments, the flow through the individual passages 258 and 262 is controlled independently of each other by a suitable mechanism. In some embodiments, this mechanism involves a separate pump for supplying fluid into individual channels. In other embodiments, a single pump is used to the main catholyte The manifold feeds, and different adjustable rectification limiting elements can be disposed in one or more of the channels to adjust between the different channels 258 and 262 and between the cross-flow injection manifold 222 and the CIRP manifold 208 region And/or relative flow around the angle of the trough. In various embodiments illustrated in the figures, one or more fluid adjustment rods 270 (sometimes referred to as flow control elements) are deployed in channels that provide independent control. In the illustrated embodiment, the fluid control rod 270 provides an annulus in which the catholyte is constrained during its flow to the cross-flow injection manifold 222 or the channel ion impedance plate manifold 208. In the fully retracted state, the fluid adjustment rod 270 does not substantially provide resistance to flow. In the fully engaged state, the fluid adjustment rod 270 provides maximum resistance to flow and, in some embodiments, stops all flow through the passage. In the intermediate state or position, the rod 270 allows for an intermediate degree of flow restraint when the fluid flows through the restricted annulus between the inner diameter of the passage and the outer diameter of the fluid adjustment rod.

In some embodiments, the adjustment of the fluid adjustment rod 270 allows the operator of the plating bath Or the controller has a preference for the flow to the cross-flow injection manifold 222 or to the channel ion impedance plate manifold 208. In several embodiments, the independent adjustment of the fluid adjustment rod 270 in the passage 258 that supplies the catholyte directly to the cross-flow injection manifold 222 allows the operator or controller to control the flow of fluid into the cross-flow manifold 226 in azimuth. Part of it.

8A-B show cross flow injection manifold 222 and phase relative to plating cup 254 A cross-sectional view of the intersecting flow inlet 250. The location of the crossflow inlet 250 is defined, at least in part, by the location of the crossflow confinement ring 210. In particular, the inlet 250 is considered to begin at the end of the cross-flow confinement ring 210. In FIG. 8A, the termination position of the confinement ring 210 (and the start position of the inlet 250) is below the edge of the wafer, whereas in FIG. 8B, the termination/start position is below the plating cup and from the wafer as compared to the design of FIG. 8A. The edges are further radially outward. Additionally, the cross-flow injection manifold 222 of FIG. 8A has a step in the cross-flow ring cavity (the generally left-hand arrow begins to rise), which can be in the cross-flow manifold region 226. Some turbulence is formed near this location of the fluid inlet. In some cases, fluid trajectory expansion near the edge of the wafer is minimized and plating is allowed by providing some distance (eg, about 10-15 mm) for the solution stream to become more uniform before flowing across the wafer surface. The transition of the solution from the cross-flow manifold region 222 and into the cross-flow manifold region 226 can have benefits.

Figure 9 provides an enlarged view of the inlet portion of the electroplating apparatus. This figure is used to display several elements The relative geometry of the pieces is provided. The distance (a) represents the height of the cross flow manifold region 226. This is between The distance between the top of the wafer holder (the substrate footprint) and the plane of the uppermost surface of the CIRP 206. As defined herein, since the CIRP 206 of FIG. 9 does not include a step or protrusion, the uppermost surface of the CIRP 206 is also a CIRP plane. In several embodiments, this distance is between about 2-10 mm, such as about 4.75 mm. The distance (b) represents the distance between the exposed wafer surface and the bottommost surface of the wafer holder (the bottom surface of the wafer holding cup). In several embodiments, this distance is between about 1-4 mm, such as about 1.75 mm. The distance (c) represents the height of the fluid gap between the upper surface of the cross-flow confinement ring 210 and the bottom surface of the cup 254. This gap between the confinement ring 210 and the bottom of the cup 254 provides space to allow the cup 254 to rotate during electroplating, and is typically as small as possible to avoid fluid leakage out of the gap and thereby confining the fluid to cross flow. The inside of the tube region 226. In some embodiments, the fluid gap is about 0.5 mm high. The distance (d) represents the height of the fluid passage for supplying the cross-flowing catholyte into the cross-flow manifold 226. The distance (d) includes the height of the cross-flow confinement ring 210. In several embodiments, the distance (d) is between about 1-4 mm, such as about 2.5 mm. Also shown in FIG. 9 is a cross-flow injection manifold 222, a showerhead plate 242 with dispensing apertures 246, and one of the directional fins 266 attached to the cross-flow confinement ring 210.

The disclosed apparatus can be configured to perform the methods described herein. Suitable equipment contains The hardware described and illustrated herein and one or more controllers having instructions for controlling the operation of the program in accordance with the present invention. The device will include one or more controllers for control: positioning of the wafer in the cup 254 and the cone, positioning of the wafer relative to the channeled ion impedance plate 206, wafer, among others Rotation, supply of catholyte into crossflow manifold 226, supply of catholyte into CIRP manifold 208, supply of catholyte into crossflow injection manifold 222, resistance/position of fluid adjustment rod 270, current to anode And the supply of wafers and any other electrodes, mixing of electrolyte components, time points of electrolyte supply, inlet pressure, plating bath pressure, plating bath temperature, wafer temperature, and other parameters of the particular program performed by the program tool.

System controllers typically contain one or more memory components and one or more processes The memory component and processor are configured to execute instructions such that the device performs the method in accordance with the present invention. The processor may include a central processing unit (CPU) or computer, analog and/or digital input/output connections, stepper motor control boards, and other similar components. A machine readable medium containing instructions for controlling operation of the program in accordance with the present invention can be coupled to a system controller. The instructions for performing the appropriate control operations are executed by the processor. These instructions can be stored in the record associated with the controller. Recall the body component, or it can be provided through the network. In several embodiments, the system controller executes system control software.

The system control software can be configured in any suitable manner. For example, you can write Different program tool component programs or control objects operate to control the program tool components required to execute programs of different program tools. The system control software can be encoded in any suitable computer readable programming language.

In some embodiments, the system control software includes controls for controlling the different parameters described above. Input/Output Control (IOC) sequencing instructions. For example, each stage of the plating process can include one or more instructions that are executed by the system controller. Instructions for setting the program conditions of the impregnation procedure stage can be included in the corresponding impregnation formulation stage. In some embodiments, the plating recipe stages can be arranged in sequence such that all instructions of the plating process stage can be performed concurrently with the program stage.

Other computer software and/or programs may be utilized in some embodiments. For this purpose Examples of programs or program fragments include a substrate positioning program, an electrolyte composition control program, a pressure control program, a heater control program, and a potential/current power control program.

In some cases, the controller controls one or more of the following functions: wafer dipping (moving, tilting, rotating), fluid transport between the tanks, etc. Wafer immersion can be moved as desired by, for example, indicating the wafer lift assembly, the wafer tilt assembly, and the wafer rotation assembly. The controller can control fluid delivery between the tanks by, for example, indicating that several valves are open or closed and several pumps are activated or deactivated. The controller can be based on the sensor output (eg, when current, current density, potential, pressure, etc. reaches a certain threshold), the point in time of operation (eg, opening the valve at some point in the program), or based on the received These implementations are controlled by the user's instructions.

The device/program described above can be used with a lithography patterning tool or program. Use, for example, for the manufacture or production of semiconductor components, displays, LEDs, photovoltaic panels, and the like. Although not necessary, in general, such tools/procedures can be used or executed together in a common manufacturing facility. The lithographic patterning of the film usually comprises part or the whole of the following steps, each step becomes feasible with some possible tools: (1) applying a photoresist on the workpiece (ie the substrate) using a spin coating or a spray tool; (2) Use a hot plate or furnace or UV curing tool to cure the photoresist; (3) expose the photoresist to visible or UV or X-ray light using a tool such as a wafer stepper; (4) use a wet bench a tool that develops the photoresist to selectively remove the photoresist and thereby pattern it; (5) transfer the photoresist pattern to the underlying film or workpiece by using a dry or plasma-assisted etching tool; 6) use like The tool of the RF or microwave plasma photoresist stripper removes the photoresist.

Characteristics of channel ion impedance components Electrical function

In several embodiments, a channeled ion impedance element approximates a nearly constant and uniform current source near the substrate (cathode), and thus may be referred to as a high impedance virtual anode (HRVA) in some instances. In general, the CIRP is positioned in a state of being close to the wafer. Conversely, an anode that is also very close to the substrate will be significantly less able to supply a nearly constant current density to the wafer and across the wafer, while maintaining a constant potential plane at the anode metal surface, allowing current to flow from the anode plane to The net resistance of the terminal (eg, to the surrounding contact points on the wafer) is the largest. Therefore, although channel ion impedance components are sometimes referred to as high impedance virtual anodes (HRVA), this does not imply that the two are electrochemically interchangeable. Under optimal operating conditions, CIRP will be more closely and perhaps better described as a virtual uniform current source, and an almost constant current is derived from the upper surface of the entire CIRP. Although it is true that CIRP can be considered as a "virtual current source" (ie, it is the plane from which current flows), and therefore CIBC can be considered as the location or source from which the anode current flows from. "virtual anode", but the relatively high ionic resistance of CIRP (relative to the electrolyte and relative to the region outside the CIRP) causes a uniform current across its face and results in a more favorable, usually compared to when the metal anode is placed in the same physical position Better wafer uniformity. The impedance of the plate to the ionic current flow increases with the increased specific resistance of the electrolyte contained in the different channels of the plate (often but not always with the same or nearly similar catholyte impedance), increased Plate thickness, and reduced porosity (eg, by having fewer holes of the same diameter, or the same number of smaller diameter holes, etc., and less of the cross-sectional area for current travel).

structure

CIRP is a dish of material that can be between about 2 and 25 mm thick (e.g., 12 mm thick). In many but not all embodiments, the CIRP comprises a very large number of micro-sized (typically less than 0.04" perforations that form less than about five percent of the CIRP volume, the perforations being spatially and ionically isolated from each other such that they are not Interconnect channels are formed within the body of the CIRP. Such perforations are often referred to as "non-connected perforations." It typically extends in a direction or dimension that is often, but not necessarily, orthogonal to the plated surface of the wafer (in some embodiments, the non-connected perforations are substantially relative to CIRP The wafers with parallel front surfaces are at an angle). The perforations are often substantially parallel to each other. In some embodiments, the thickness of the CIRP plate is not uniform. The CIRP board can be thicker at the edge than at its center and vice versa. The CIRP surface farthest from the wafer can be shaped to adjust the local fluid and ion current impedance of the plate. The holes are often arranged in a square array, but other arrangements that result in an evenly uniform pore density in space are also possible. Of course, the hole density can also be varied by increasing (or decreasing) the distance from the CIRP center to the edge, for example, as the distance from the CIRP center increases (or decreases). At other times, it is arranged as an eccentric spiral pattern. These perforations differ from the 3D hole network in which the channels extend in three dimensions and form an interconnected hole structure, since the perforations recombine both the ion current flow and the fluid flow parallel to the surface in the perforation, and the current and fluid flow are two The path of the person straightens toward the surface of the wafer. In several embodiments, however, such a porous plate with interconnected pore networks can be used in place of CIRP. When the distance from the top surface of the board to the wafer is small (for example, a gap of about 1/10 wafer radius size, for example, about 5 mm or less), the divergence of both current flow and fluid flow is locally limited, and is applied. Align with the channel of the CIRP.

In several embodiments, the CIRP includes a step that is nearly coextensive with the diameter of the substrate. (For example, the diameter of the step portion may be within about 5% of the diameter of the substrate, for example, within about 1% of the difference). The step is defined as a lift on the substrate-facing side of the CIRP that is nearly coextensive with the substrate to be plated. The CIRP ladder also contains perforations that match the perforations in the main part of the CIRP. Examples of this embodiment are shown in Figures 10A and 10B. The purpose of the step portion 902 is to reduce the height of the cross flow manifold 226 and thereby increase the velocity of the fluid traveling in this region without the need to increase the volumetric flow rate. The step portion 902 can also be considered as a plateau region and implemented as a raised region of the CIRP 206 itself.

In many cases, the diameter of the step 902 should be slightly smaller than the wafer holder 254 The inner diameter (e.g., the outer diameter of the step portion may be less than about 2-10 mm from the inner diameter of the substrate holder) and the inner diameter of the cross flow restriction ring 210. Without such a difference in diameter (shown as distance (f)), it may be undesirable to form a fluid between the cup holder 254 and/or the cross-flow confinement ring 210 and the step 902 where it is difficult or It is not possible to flow up and enter the squeezing point of the cross flow manifold 226. When this is the case, the fluid may undesirably flow away through the fluid gap 904 between the cross-flow confinement ring 210 and the bottom surface of the substrate holder/cup 254. Fluid gap 904 is a problem due to practicality because substrate holder 254 should be capable of rotating relative to CIRP 206 and other elements of the plating bath. It is more desirable to make the cathode electricity flowing through the fluid gap 904 The amount of solution is minimized. The step portion 902 can have a height between about 2-5 mm (eg, between about 3-4 mm), which can correspond to between about 1-4 mm, or between about 1-2 mm, or Cross flow manifold height less than about 2.5 mm.

In the presence of a step, the height of the crossflow manifold is measured to be inter-wafer The distance between the plated surface and the lift step 902 of the CIRP 206. In Figure 10A, this height is shown as distance (e). Although no substrate is shown in FIG. 10A, it is understood that the plated side of the substrate will rest on the lip seal 906 of the substrate holder 254. In several embodiments, the step has a rounded edge to better allow fluid to enter the crossflow manifold. In this case, the step portion may include a transition region in which the step surface is rounded or inclined, about 2-4 mm wide. Although FIG. 10A does not show the rounded step, the distance (g) represents that such a transition region is set. Within the radial interior of this transition region, the CIRP can be flat. As shown in Figure 10B, the non-lifting portion of the CIRP can extend around the entire circumference of the CIRP.

In other embodiments, the CIRP can include a cluster of protrusions on its upper surface. The protruding portion is defined as a structure placed/attached to the CIRP facing substrate side, extending into the CIRP plane and the cross flow manifold between the wafers. The CIRP plane (also known as the ion impedance element plane) is defined as the top surface of the CIRP that does not contain any protrusions. The CIRP plane is attached to the CIRP for the projections and also exits the CIRP from the CIRP into the crossflow manifold. Examples of this embodiment are shown in Figures 1A and 11. FIG. 1A shows an isometric view of a CIRP having protrusions 151 oriented perpendicular to the cross-flow direction. Figure 11 shows an enlarged view of the inlet portion of an electroplating apparatus having a CIRP with a projection 908. The CIRP 206 can include a surrounding area where no protrusions are provided to allow the catholyte to travel up and into the cross flow manifold 226. The surrounding non-protruding area may have a width as described above with respect to the distance between the step and the cup holder. In many cases, the tabs are substantially coextensive with the plated face of the plated substrate (eg, the diameter of the tab regions on the CIRP can be within about 5% of the substrate diameter, or within about 1% of the difference).

The projections can be oriented in different ways, but in many embodiments, the projections are The elongated ribs are disposed between the plurality of holes in the CIRP and are oriented such that the length of the projections is perpendicular to the cross flow through the cross flow manifold. An enlarged view of the CIRP having elongated projections between the CIRP holes in the plural column is shown in FIG. The protrusions change the flow field adjacent to the wafer to improve quality transfer to the wafer and improve quality transfer across the wafer surface. In some cases, the projections can be machined into an existing CIRP panel, or the projections can be shaped while the CIRP is being fabricated. to make. As shown in Figure 12, the projections can be arranged such that they do not block the existing 1-D CIRP perforations 910. In other words, the width of the protrusions 908 can be less than the distance between each of the holes 910 in the CIRP 206. In one example, the CIRP holes 910 are arranged with a center-to-center spacing of 2.69 mm and a hole diameter of 0.66 mm. Thus, the projections can be less than about 2 mm wide (2.69-2*(0.66/2) = 2.03 mm). In some cases, the protrusions can be less than about 1 mm wide. In some cases, the protrusions have an aspect ratio of length to width of at least about 3:1.

In many embodiments, the tabs are oriented such that their length is perpendicular or substantially perpendicular to the cross-flow direction across the wafer face (sometimes referred to herein as the "z" direction). In some cases, the projections are oriented at a different angle or a set of angles.

Many different protrusion shapes, sizes, and arrangements can be used. In some embodiments, the protrusion has a face that is substantially perpendicular to the face of the CIRP, while in other embodiments, the protrusion has a face that is positioned at an angle relative to the face of the CIRP. In still further embodiments, the projections are shaped to have no flat faces. Some embodiments may utilize different protrusion shapes and/or sizes and/or orientations.

Figure 13 provides an example of the shape of the protrusion, shown as a section of the protrusion 908 on the CIRP 206. In some embodiments, the projections are shaped to be substantially rectangular. In other embodiments, the protrusions are triangular, cylindrical, or some combination of the two. The projections can also be substantially rectangular with a machined triangular tip. In several embodiments, the protrusions can include holes that pass through the protrusions and are oriented substantially parallel to the cross-flow direction across the wafer.

Figure 14 provides several examples of protrusions having different types of perforations. The perforations can also be referred to as flow mitigation structures, notches, or notches. The perforation assists in disrupting the manifold so that the flow becomes detoured in all directions (x, y, and z). Example (a) shows a protrusion having a top portion that is dug into a rectangular pattern; example (b) shows a protrusion having a bottom portion that is dug into a rectangular pattern; and example (c) shows a pattern with a rectangle cut out a protrusion of the middle portion; the example (d) shows a protrusion having a series of holes excavated into a circular/elliptical pattern; and the example (e) shows a protrusion having a series of holes excavated into a diamond pattern; Example (f) shows a projection having alternating top and bottom portions of a trapezoidal pattern. The holes may be lined up to each other horizontally or may be offset from one another as shown in examples (d) and (f).

Figure 15 shows an example of a protrusion 908 having an alternating type of notch similar to the embodiment of example (f) of Figure 14. Two types called first notch 921 and second notch 922 are used here. gap. In this embodiment, the first notch 921 is at the bottom portion of the projection 908 and the second notch 922 is at the top portion of the projection 908. The entire protrusion may have a height (h) between about 1-5 mm and a thickness (i) between about 0.25-2 mm. The first gap can have a height (j) between about 0.2-3 mm, and a length (k) between about 2-20 mm. The second notch 922 at the top portion of the projection 908 can also have a height (m) between about 0.2-3 mm and a length (n) between about 2-20 mm. The distance (p) between adjacent first notches 921 (i.e., the period of the first notches 921) may be between about 4 and 50 mm. The distance (q) between the adjacent second notches 922 (i.e., the period of the second notches 922) may also be between about 4-50 mm. These dimensions are provided for ease of understanding and are not intended to be limiting. The wafer face (W) is shown above the protrusion 908. Between the base and the wafer face (w) attached to the CIRP projection 908 is a cross flow manifold 226.

Figure 16 shows an implementation of CIRP 206 having the type of protrusion 908 shown in Figure 15. example. Also shown in Figure 16 is a cross-flow confinement ring 210. Those of ordinary skill in the art will appreciate that many different types of protrusions and indentations can be used within the scope of the disclosed embodiments.

Some embodiments may utilize protrusions with gaps (sometimes referred to as non-protruding gaps) For so that two or more separate/discontinuous protrusions are placed in the same column of CIRP holes. FIG. 17 shows an example of a CIRP 206 having a protrusion 908 with a non-protruding gap 912. The gaps 912 in the protrusions 908 can be designed such that they are not substantially aligned with one another in the cross-flow direction. For example, in Figure 17, the gaps 912 are not aligned with one another between the protrusions 908 of adjacent columns. The misalignment of the purpose of the gap 912 can help increase the mixing of the impinging stream and the cross-flow in the cross-flow manifold to promote uniform plating results.

In some embodiments, there is a protrusion between each column of holes in the CIRP. In other embodiments, however, there may be fewer protrusions. For example, in several embodiments, there may be a protrusion for every two columns of CIRP holes, or a protrusion for every four columns of CIRP holes. In a further embodiment, the location of the protrusions may be more random.

A closely related parameter in the optimization of the protrusion is the height of the protrusion or the phase Off ground, the distance between the top of the protrusion and the bottom of the wafer surface, or the ratio of the height of the protrusion to the height of the upper CIRP to the wafer path. In several embodiments, the projections are between about 2-5 mm high, such as about 4-5 mm high. The distance between the top of the protrusion and the bottom of the wafer can be between about 1-4 mm (eg, about 1-2 mm), or less than about 2.5 mm. Projection height than upper cross flow manifold The height ratio can be between about 1:3 and 5:6. In the presence of the protrusions, the height of the cross-flow manifold is measured as the distance between the wafer plating surface and the CIRP surface that does not include any protrusions.

Figure 18 shows a projection 908 having a hole 910 positioned in the CIRP 206. An example of an enlarged cross-sectional view of CIRP 206. Crossflow manifold 226 occupies a space between wafer face (w) and CIRP face 914. Crossflow manifold 226 can have a height of between about 3-8 mm, such as between about 4-6 mm. In a particular embodiment, this height is about 4.75 mm. The protrusions 908 are positioned between the plurality of column holes 910 in the CIRP 206 and have a height (s) that is less than the height (r) of the cross flow manifold 226 as described above.

Figure 19 shows a simplified top view of an alternative embodiment of a CIRP 206 having protrusions 908 oriented in different ways. In this embodiment, each projection 908 is formed by two sections 931 and 932. For the sake of clarity, only a single protrusion and a single set of protrusion sections are marked. Sections 931 and 932 are oriented perpendicular to each other and have the same or substantially similar (e.g., within about 10% of each other) length. In other embodiments, the segments 931 and 932 can be oriented at different angles relative to one another and can have different lengths. In a further embodiment, the two sections 931 and 932 may be disconnected from one another such that there are two (or more) separate types of projections, each oriented at an angle relative to the cross flow. In Fig. 19, the direction of the cross flow is left to right as indicated. Each of the segments 931 and 932 of the projection 908 is oriented at an angle relative to the crossflow as indicated by angles (t) and (u). The line dividing the angles (t) and (u) is intended to represent the overall direction of the cross flow. In some cases, the angles are the same or substantially similar (eg, within about 10% of each other). Since the protrusions 908 are not individually oriented in a direction perpendicular to the cross flow, this embodiment is different from, for example, the one shown in FIG. 1A. However, since the angles t and u are substantially similar, and since the lengths of the projection sections are substantially similar, the projections can be considered to be oriented generally perpendicular to the cross flow direction.

In various cases, CIRP is a dish made of solid, non-porous dielectric material that is ionically and electrically resistive. This material is also chemically stable in the plating bath used. In some cases, the CIRP is made of a ceramic material (such as a mixture of alumina, tin dioxide, titanium dioxide, or metal oxide) or a plastic material (such as polyethylene, polypropylene, polyvinylidene fluoride (PVDF), polytetra Made of vinyl fluoride, polysulphone, polyvinyl chloride (PVC), polycarbonate, etc., having non-connected perforations between about 6000-12000. In many embodiments, the dish is substantially crystalline The circle is coextensive (for example, a CIRP dish has a diameter of about 300 mm when used with a 300 mm wafer) and exists in a state very close to the wafer, for example, in a wafer facing down plating apparatus directly under the wafer. Preferably, the plated side of the wafer is present within about 10 mm, more preferably within about 5 mm of the closest CIRP surface. To this end, the top surface of the channel ion impedance plate can be flat or substantially flat. In some cases, the top and bottom surfaces of the channel ion impedance plate are flat or substantially flat.

Another feature of CIRP is the diameter or major size of the perforations and their relationship to CIRP and The relationship between the distance between the substrates. In several embodiments, the diameter of each perforation (or the diameter of most of the perforations, or the average diameter of the perforations) does not exceed a distance from the surface of the plated wafer to the closest CIRP surface. Thus, in such an embodiment, the diameter or major dimension of the perforations should not exceed about 5 mm when the CIRP is placed within about 5 mm of the surface of the plated wafer.

As above, the overall ionic impedance and flow resistance of the plate depend on the thickness of the plate, and Body porosity (the area available for flow through the plate) and the size/diameter of the hole. Lower porosity plates will have higher impinging flow rates and ionic impedance. Compared to plates of the same porosity, 1-D holes with smaller diameters (and therefore a larger number of 1-D holes) have more individual current sources (which are more scatterable in the same gap) Point sources everywhere) will have a more microscopic uniform current distribution on the wafer and will also have a higher total pressure drop (high viscous flow resistance).

In some cases, however, the ion impedance plate is referred to as porous as mentioned above. These boards The pores in the space may not form separate 1-D channels, but may instead form a perforated network that may or may not be interconnected. It should be understood that the channel ion impedance plate (CIRP) and channel ion impedance element as used herein are intended to encompass this embodiment unless otherwise noted.

Vertical flow through the perforation

In applications where the end effect is active/associated, such as when the current impedance in the seed layer of the wafer is greater than in the catholyte of the bath, the ion-impedance but ion-permeable element The presence of CIRP) 206 near the wafer substantially reduces termination effects and improves plating uniformity in the radial direction. By acting as a flow diffusion manifold, CIRP also provides the ability to direct substantially spatially uniform catholyte impingement streams up to the wafer surface. Importantly, if the same components are placed far from the wafer, the uniformity of ion current and flow improvement become significantly less pronounced or absent.

Furthermore, since non-connected perforations do not allow ion current or fluid transport within the CIRP The lateral movement of the movement thus causes the current and flow movement towards the edge of the center to be blocked inside the CIRP, resulting in a further improvement in the uniformity of the radial plating.

Note that in some embodiments, the CIRP plate can be used primarily or separately as a tank An element that is fluid flow impedance, flow controlled, and thus shaped by flow, is sometimes referred to as a turboplate. This designation can be used regardless of whether the plate adjusts the radial deposition uniformity by, for example, balancing the end effect and/or adjusting the electric field or the dynamic resistance of the plating additive in combination with the flow in the tank. Thus, for example, in TSV and WLP plating where the thickness of the seed metal is typically large (eg, >1000 Å thick) and the metal is deposited at a very high rate, uniform distribution of the electrolyte flow is important, but is within the wafer seed crystal. The radial non-uniformity control caused by the ohmic pressure drop is less compensable (at least in part, because the center-to-edge non-uniformity is less severe with thicker seed layers). Therefore, the CIRP board can be referred to as an element with ion impedance, ion permeation, and a manifold plastic element, and can exhibit a deposition rate by changing the flow of the ion current, changing the convective flow of the substance, or improving both. Corrected features.

The distance between the wafer and the channel plate

In some embodiments, the wafer holder and associated positioning mechanism hold the rotating wafer in close proximity to the parallel upper surface of the channel ion impedance element. During electroplating, the substrate is positioned substantially such that it is parallel or substantially parallel (eg, within about 10[deg.]) to the ion impedance element. Although the substrate may have several features thereon, only a substantially flat shape of the substrate is considered in determining whether the substrate and the ion impedance element are substantially parallel.

In a typical case, the separation distance is about 1-10 mm, or about 2-8 mm. This plate-to-wafer short distance creates a plating pattern on the wafer, particularly near the center of rotation of the wafer, which is associated with near "imaging" of individual holes in the pattern. In such cases, an electroplated ring pattern (on thickness or electroplated texture) may be created near the center of the wafer. To avoid this, in some embodiments, individual holes in the CIRP (especially at or near the center of the wafer) can be constructed to have a particularly small size, such as less than about 1/5 of the plate-to-wafer gap. When coupled to the wafer, the small pore size allows for a time average of the flow rate of the impinging fluid from the plate as a jet and reduces or avoids small scale non-uniformities (e.g., at the micron scale). Despite the above precautions, and depending on the nature of the plating bath used (eg specific metal deposited, conductivity, And the bath additive used), in some cases, the deposition may still be prone to appear in microscopic non-uniform patterns (eg, forming a center ring) as a time-averaged exposure of varying thicknesses (eg, in the "bulb center" shape around the center of the wafer) And near imaging patterns, and corresponding to the individual hole patterns used. This can occur if a limited pattern of holes produces a pattern of impinging flow that is non-uniform and affects deposition. In this case, it has been found that the introduction of lateral flow across the center of the wafer, and/or the change of regular hole patterns that are in the vicinity of the center and/or center, substantially eliminates any microscopic findings found in other cases. Signs of uniformity.

Porosity of channel plate

In various embodiments, the channeled ion impedance plate has a low porosity and a small enough pore size to provide a viscous flow resistance back pressure and a high vertical impact flow rate at a normal operating volume flow rate. In some cases, about 1-10% of the channel ion impedance plates are open areas that allow fluid to reach the wafer surface. In a particular embodiment, about 2-5% of the panel is an open area. In a particular embodiment, the open area of the plate 206 is about 3.2% and the effective total open cross-sectional area is about 23 cm ² .

Hole size with channel plate

The porosity of a channeled ion impedance plate can be implemented in many different ways. In various embodiments, it is practiced with a plurality of small diameter vertical holes. In some cases, the plates are not made up of individual "drilled" holes, but are made from sintered sheets of continuous porous material. An example of such a sintered plate is described in U.S. Patent No. 6,964,792 [Attorney Docket No. NOVLP023], which is incorporated herein by reference in its entirety. In some embodiments, the non-connected holes that are pierced have a diameter of about 0.01 to 0.05 inches. In some cases, the holes have a diameter of about 0.02 to 0.03 inches. As mentioned above, in various embodiments, the holes have a diameter that is at most about 0.2 times the gap distance between the channel ion impedance plate and the wafer. The holes are usually circular in cross section, but this is not necessarily the case. Again, all holes in the panel can have the same diameter for ease of manufacture. However, this is not necessarily the case, and the individual dimensions and local densities of the holes may vary throughout the surface of the panel as certain requirements may be required.

As an example, a solid board made of a suitable ceramic or plastic material (typically a dielectrically insulating and mechanically strong material) has, for example, at least about 1000, or at least about 3000, or A small number of small holes are provided in which about 5,000, or at least about 6,000 (9,465 holes having a diameter of 0.026 已 have been found) are disposed. As mentioned, some designs have about 9000 holes. The porosity of the panels is typically less than about 5 percent so that the total flow rate required to produce high impact velocities is not too great. The use of smaller holes helps create a large pressure drop across the plate compared to larger holes, helping to produce a more uniform upward velocity across the plate.

In general, the distribution of holes in a channel with an ion impedance plate is uniform. Degrees are not random. In some embodiments, however, the density of the holes may vary, particularly in the radial direction. As described more fully below, in certain embodiments there is a greater hole density and/or diameter in the region that directs the flow to the center of the rotating substrate. Further, in some embodiments, directing the holes of the electrolyte at or near the center of the rotating wafer can induce a flow that is not at right angles to the surface of the wafer. Further, the pattern of holes in this region may have a random or partially random distribution of non-uniform plated "rings" to cope with the possible interaction between a limited number of holes and wafer rotation. In some embodiments, the density of the holes near the open section of the flow diverter or confinement ring is relatively small compared to the area of the channel ion impedance plate that is further away from the open section of the attached diverting redirector or confinement ring. .

It should be understood that the configuration and/or the parties described herein are possible due to numerous variations. The formula is exemplary in nature and the specific embodiments or examples are not to be considered in a limiting sense. The particular process or manner described herein can represent one or more of any number of processing strategies. Accordingly, the various actions illustrated may be performed in the sequence illustrated, in other sequences, concurrently, or in some cases. Likewise, the order of the above described procedures can be changed.

The subject matter of this disclosure encompasses the various procedures, systems, and configurations disclosed herein. And all other and all equivalents of the novel and non-obvious combinations and sub-combinations of the technical features, functions, acts, and/or properties.

Examples and experiments

The results of the modeling and experimental results on the wafer show that the disclosed embodiments can substantially increase the uniformity of the plating process. Figure 20 presents a summary of some experimental results for copper plating. Two different CIRP designs were tested at each of two different deposition rates (with and without protrusions).

The first CIRP design is a control design in which no steps or protrusions are used. The second CIRP design includes a cluster of protrusions positioned between CIRP holes of adjacent columns and oriented 2.5 mm high perpendicular to the direction of the cross flow. The height of the cross flow manifold is about 4.75 mm. The two copper deposition rates tested were 2.4 and 3.2 μ m/min. In other words, the current supplied during each experiment was the current level required to deposit a metal of about 2.4 or 3.2 μm /min on average. The plating chemistry used in the experiments was SC40 chemistry with a sulfuric acid concentration of about 140 g/L and about 40 g/L of copper ions (Cu ²⁺ ) (from copper sulphate), Enthone from Connecticut West Haven. The concentrations of the R1 and R2 additives in the catholyte were 20 and 12 mL/L, respectively. The flow rate of the catholyte was about 20 L/min. The substrate was rotated at a rate of about 4 RPM. The fluid gap between the upper surface of the cross-flow confinement ring and the lower surface of the electroplated cup is about 0.5 mm. The plating procedure was carried out at about 30 °C. The height of the bump after plating is measured at a number of different locations across the surface of each wafer.

In all cases, the bump height is slightly thicker near the edge of the wafer and is thinner near the center of the wafer. However, at both deposition rates, CIRP with protrusions showed less variation in thickness compared to the CIRP of the control. Therefore, the CIRP with the protrusions shows a clear improvement in the bump height distribution. Coplanarity is substantially the same between the control set and the set of protrusions, but is expected to be excellent for the protrusions under conditions of severe mass transfer (eg, a deposition rate of >4 μm /min for copper) . For a given grain, the grain co-flatness is defined as (1/2 x (maximum bump height - minimum bump height) / average bump height. Wafer coplanarity reported in Figure 20) Is the average of all grain co-flatness for a given wafer. In this case, there are about 170 grains for a particular test wafer.

Additional modeled results showing the effectiveness of the protrusions are contained in U.S. Provisional Patent Application Serial No. 61/736,499, which is incorporated herein by reference.

Other embodiments

Although the above is a complete description of a particular embodiment, various modifications, alternative constructions, and equivalents may be used. Therefore, the above description and description are not to be considered as limiting the scope of the invention as defined by the appended claims.

150‧‧‧Channel ion impedance plate (CIRP)

151‧‧‧Protruding

Claims (33)

An electroplating apparatus comprising: (a) an electroplating chamber configured to receive an electrolyte and an anode, and to plate metal onto a flat substrate; (b) a substrate holder configured to hold the flat substrate Having a plated surface of the substrate separated from the anode during electroplating; (c) an ion impedance element comprising: (i) a plurality of channels extending through the ion impedance element and for providing a pass through during the electroplating Ion transport of the ion impedance element; (ii) a substrate-facing side parallel to the plated surface of the substrate and separated from the plated surface of the substrate by a gap; and (iii) a plurality of protrusions positioned at the ion impedance The substrate faces the substrate side; (d) an inlet leading to the gap for directing the cross-flowing electrolyte to the gap; and (e) an outlet leading to the gap for receiving in the gap A flowing, cross-flowing electrolyte, wherein the inlet and the outlet are positioned adjacent to a peripheral location of the plated surface of the substrate during plating relative to a surrounding location. The electroplating apparatus of claim 1, wherein when the plating surface of the substrate and an ion impedance element surface are measured, the substrate of the ion impedance element faces the substrate side and the plating surface of the substrate The gap is less than about 15 mm. The electroplating apparatus of claim 1, wherein a gap between the plated surface of the substrate and an uppermost height of one of the plurality of protrusions is between about 0.5 and 4 mm. The electroplating apparatus of claim 1, wherein the plurality of protrusions have a height of between about 2 and 10 mm. The electroplating apparatus of claim 1, wherein, on average, the plurality of protrusions are oriented in a direction perpendicular to the electrolyte flowing in the cross. The electroplating apparatus of claim 1, wherein at least some of the plurality of protrusions have a length to width aspect ratio of at least about 3:1. An electroplating apparatus according to claim 1, wherein the ion impedance element is present on the ion impedance element A plurality of complex protrusions of different shapes and/or sizes. The electroplating apparatus of claim 1, further comprising one or more notches on at least some of the plurality of protrusions, the electrolyte flowing through the gap portions during electroplating. The electroplating apparatus of claim 1, wherein at least some of the plurality of protrusions comprise a surface that is perpendicular to an ion impedance element surface. The electroplating apparatus of claim 1, wherein at least some of the plurality of protrusions comprise a side that is offset from a surface of an ion impedance element by a non-right angle. The electroplating apparatus of claim 1, further comprising a triangular upper portion on at least some of the plurality of protrusions. The electroplating apparatus of claim 1, wherein the plurality of protrusions comprise at least one first protrusion section and one second protrusion section, and wherein the first and second protrusion sections are similar but The complex angles with opposite signs deviate from the direction of the cross-flowing electrolyte. The electroplating apparatus of claim 1, wherein the ion impedance element is configured to shape an electric field during electroplating and to control characteristics of an electrolyte flow in the vicinity of the substrate. The electroplating apparatus of claim 1, further comprising a lower manifold region positioned below a lower surface of the ion impedance element, wherein the lower surface faces away from the substrate holder. The electroplating apparatus of claim 14, further comprising a central electrolyte chamber and one or more feed channels configured to supply electrolyte from the central electrolyte chamber to Both the inlet and the lower manifold region. The electroplating apparatus of claim 1, further comprising a cross-flow injection manifold fluidly connected to the inlet. The electroplating apparatus of claim 16, wherein the cross-flow injection manifold is at least partially defined by a cavity in the ion-impedance element. The electroplating apparatus of claim 1 further includes a first-order confinement ring positioned above a portion of the ion impedance element. The electroplating apparatus of claim 1, further comprising a mechanism for rotating the substrate holder during electroplating. The electroplating apparatus of claim 1, wherein the inlet spans an arc between about 90-180° near the periphery of the plating surface of the substrate. The electroplating apparatus of claim 1 of the patent scope further includes a plurality of azimuths in the inlet. a further section, a plurality of electrolyte feed inlets configured to supply an electrolyte to the plurality of sections of the plurality of azimuthal angles, and configured to independently control the plurality of electrolytes in the plurality of electrolyte feed inlets during plating One or more flow control elements of volumetric flow rate. The electroplating apparatus of claim 1, wherein the plurality of protrusions are coextensive with the plating surface of the substrate. The electroplating apparatus of claim 1, wherein the inlet and the outlet are used to generate a cross-flowing electrolyte in the gap during electroplating to generate or maintain a shearing force on the plating surface of the substrate. The electroplating apparatus of claim 1, wherein the plurality of protrusions are oriented in a plurality of parallel columns, wherein the columns comprise two or more discontinuous protrusions separated by a non-protruding gap, and wherein adjacent The plurality of non-protruding gaps in the column are not aligned with each other in the direction of the cross-flowing electrolyte. An electroplating apparatus comprising: (a) an electroplating chamber configured to receive an electrolyte and an anode while electroplating metal onto a flat substrate; (b) a substrate holder configured to hold the flat substrate Having a plated surface of the substrate separated from the anode during electroplating; (c) an ion impedance element comprising: (i) a plurality of channels extending through the ion impedance element and for providing a pass through during the electroplating Ion transport of the ion impedance element; (ii) a substrate-facing side parallel to the plated surface of the substrate and separated from the plated surface of the substrate by a gap; and (iii) a stepped portion positioned at the ion impedance The step of the component facing the substrate, wherein the step has a height and a diameter, wherein the diameter of the step is coextensive with the plated surface of the substrate, and wherein the height and diameter of the step are small Sufficient to allow the electrolyte to flow under the substrate holder during electroplating, to flow across the step and into the gap; (d) an inlet leading to the gap for directing electrolyte to the gap; and (e) One exit Leading to the gap for receiving electrolyte flow in the gap, wherein the inlet and outlet lines for the electrolysis in the cross-flow gap during electroplating The liquid creates or maintains a shear force on the plated surface of the substrate. A channel ion impedance plate for use in an electroplating apparatus for electroplating a material onto a standard diameter semiconductor wafer, the channel ion impedance plate comprising: a plate coextensive with a plated surface of the semiconductor wafer Wherein the plate has a thickness of between about 2 and 25 mm; at least 1000 non-communicating perforations extending through the thickness of the plate, wherein the perforations serve to provide ions through the plate during electroplating Delivery; and a plurality of protrusions positioned on one side of the plate. A channel ion impedance plate for use in an electroplating apparatus for electroplating a material onto a standard diameter semiconductor wafer, the channel ion impedance plate comprising: a plate coextensive with a plated surface of the semiconductor wafer Wherein the plate has a thickness of between about 2 and 25 mm; at least 1000 non-communicating perforations extending through the thickness of the plate, wherein the perforations serve to provide ions through the plate during electroplating And a step portion comprising a raised portion of the plate in a central region of the plate; a non-lifting portion of the plate positioned about the plate. A method of plating a substrate, comprising: (a) receiving a flat substrate in a substrate holder, wherein a plating surface of the substrate is exposed, and wherein the substrate holder is configured to hold the substrate, such that the substrate The plating surface is separated from an anode during electroplating; (b) immersing the substrate in the electrolyte, wherein a gap is formed between the plating surface of the substrate and an ion impedance element surface, wherein the ion impedance element The plated surface of the substrate is at least approximately coextensive, wherein the ion impedance element is configured to provide ion transport through the ion impedance element during electroplating, and wherein the ion impedance element comprises one of the ion impedance elements facing the substrate side a plurality of protrusions coextensive with the plated surface of the substrate; (c) causing the electrolyte to flow in contact with the substrate in the substrate holder in the following manner: (i) entering from one side, entering The gap, the outflow side outlet, and (ii) the ion resistance Resisting the element, passing through the ion impedance element, entering the gap, and exiting the side outlet, wherein the inlet and outlet are designed or configured to create a cross-flowing electrolyte in the gap during electroplating; (d) The substrate holder rotates; and (e) electroplating the material onto the plating surface of the substrate while flowing the electrolyte as in (c). The method of electroplating a substrate according to claim 28, wherein the gap is less than about 15 mm when measured between the plated surface of the substrate and the surface of the ion impedance element. The method of electroplating a substrate according to claim 28, wherein a gap between the plated surface of the substrate and an uppermost surface of the plurality of protrusions is between about 0.5 and 4 mm. The method of electroplating a substrate according to claim 28, wherein the side inlet is divided into two or more azimuthally separated and fluidly separated sections, and wherein the azimuth angle to the inlet is different. The electrolyte flow system of the section is independently controlled. The method of electroplating a substrate according to claim 28, wherein the plurality of flow guiding members are positioned in the gap, and wherein the plurality of flow guiding members cause the electrolyte to flow from the side inlet to the side outlet in a linear flow path . A method of plating a substrate, comprising: (a) receiving a flat substrate in a substrate holder, wherein a plating surface of the substrate is exposed, and wherein the substrate holder is configured to hold the substrate, such that the substrate The plating surface is separated from an anode during electroplating; (b) immersing the substrate in the electrolyte, wherein a gap is formed between the plating surface of the substrate and an ion impedance element surface, wherein the ion impedance element The plated face of the substrate is at least approximately coextensive, wherein the ion impedance element is configured to provide ion transport through the ion impedance element during plating, and wherein the ion impedance element comprises on one of the ion impedance elements facing the substrate side a step portion positioned in a central region of the ion impedance element and surrounded by one non-lifting portion of the ion impedance element; (c) causing the electrolyte to flow in the following manner with the substrate holder The substrate connection Touch: (i) from one side of the inlet, over the step, into the gap, again over the step, and out of the outlet, and (ii) from below the ion impedance element, through the ion impedance element, into The gap, over the step, and out of the side outlet, wherein the inlet and outlet are designed or configured to create a cross-flowing electrolyte in the gap during plating; (d) rotating the substrate holder; e) plating the material onto the plated side of the substrate while flowing the electrolyte as in (c).