CN110315161A - A kind of High-temperature Packaging Cu3The preparation method of Sn/ foam copper composite-joint - Google Patents
A kind of High-temperature Packaging Cu3The preparation method of Sn/ foam copper composite-joint Download PDFInfo
- Publication number
- CN110315161A CN110315161A CN201910619082.0A CN201910619082A CN110315161A CN 110315161 A CN110315161 A CN 110315161A CN 201910619082 A CN201910619082 A CN 201910619082A CN 110315161 A CN110315161 A CN 110315161A
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- CN
- China
- Prior art keywords
- foam copper
- tin alloy
- composite
- temperature
- joint
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- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K1/00—Soldering, e.g. brazing, or unsoldering
- B23K1/08—Soldering by means of dipping in molten solder
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K1/00—Soldering, e.g. brazing, or unsoldering
- B23K1/20—Preliminary treatment of work or areas to be soldered, e.g. in respect of a galvanic coating
- B23K1/206—Cleaning
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K20/00—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating
- B23K20/02—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating by means of a press ; Diffusion bonding
- B23K20/023—Thermo-compression bonding
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K28/00—Welding or cutting not covered by any of the preceding groups, e.g. electrolytic welding
- B23K28/02—Combined welding or cutting procedures or apparatus
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K31/00—Processes relevant to this subclass, specially adapted for particular articles or purposes, but not covered by only one of the preceding main groups
- B23K31/02—Processes relevant to this subclass, specially adapted for particular articles or purposes, but not covered by only one of the preceding main groups relating to soldering or welding
Abstract
The present invention relates to a kind of High-temperature Packaging Cu3The preparation method of Sn/ foam copper composite-joint.It is characterized in that: using foam copper as skeleton, tin alloy is as packing material, composite soldering is made according to a certain percentage, make it in product (such as IGBT by welding, LED, photovoltaic module) and substrate between formed and be reliably connected, be quickly obtained by generated in-situ IMC with react after the microbonding point that is combined of remaining foam copper.The composite-joint generated in the present invention is compared with full compound connector, with higher conductivity, thermal conductivity, while there is good mechanical property, high temperature creep-resisting, deelectric transferred performance, it is low in cost, it can satisfy high-volume requirement, can be widely applied to three generations's semiconductor packages.
Description
Technical field
The present invention relates to semiconductor packages interconnection more particularly to a kind of High-temperature Packaging Cu3Sn/ foam copper is compound to be connect
The preparation method of head.
Background technique
Recently as the high speed development of the industry markets such as new energy, rail traffic, Industry Control, to third generation semiconductor
Device proposes strong demand.However China in this field is limited by developed country at present, exploitation have independent intellectual property right,
Localized high performance three generations's semiconductor product is extremely urgent, and weld be three generations's semiconductor packages key technology it
One.Since the power density of chip is continuously improved, up to 175 DEG C, the high-temperature service performance of this butt welding point mentions highest work section temperature
Higher requirement is gone out.Research has three classes for the main method that three generations's semiconductor device chip is connect with substrate at present: respectively
It is that high temperature brazing, sintering of nano-material, Transient liquid phase connect to form full compound (TLP).In high temperature brazing, Au-Sn solder apply compared with
It is more, but its connector is at high cost, although there is effect on environment but to the civilian production in part in followed by high Pb solder, high Pb solder
Product be reduce cost still with.Although sintering of nano-material technology meets three generations's semiconductor packages demand to a certain extent,
But a large amount of cavities at high cost, in sintering structure, problems of electromigration are this method critical issues in the urgent need to address.Instantaneously
It is to melt to form liquid phase and react with refractory metal using low-melting-point metal that liquid phase, which connects and to form full compound (TLP) principle,
Dystectic articulamentum is formed, realizes metallurgical bonding, is a kind of to realize " law temperature joining, the high-temperature service " of power device
The ideal method for being used for three generations's semiconductor packages.
Currently used for the TLP technology of three generations's semiconductor packages to study based on the full compound connector of Cu-Sn.Cu- at room temperature
Sn compound has Cu6Sn5And Cu3Two kinds of Sn.Wherein Cu6Sn5Resistivity is 17.5 μ Ω cm, thermal conductivity 34.1W/mcK, poplar
Family name's modulus 112.3GPa.Cu3Sn resistivity is 8.9 μ Ω cm, thermal conductivity 70.4W/mcK, Young's modulus 134.2GPa.
Cu3Resistivity, thermal conductivity, the Young's modulus of Sn is better than Cu6Sn5.Therefore, full Cu3Sn compound connector is particularly suited for three generations
Semiconductor device chip is connect with substrate.But Cu3Sn brittleness compared with conventional high-temperature Pb base, Au base solder is big, and electric conductivity is led
Hot property is poor, forms full Cu3Sn connector needs stay longer under high temperature, these all limit it in third generation semiconductor package
Application in dress interconnection.
The present invention is by the way that using foam copper as skeleton, tin alloy makes Combined Welding as packing material according to a certain percentage
Piece is quickly obtained by the effect of additional energy field by generated in-situ Cu3Sn with react after remaining foam copper be combined
Microbonding point.The compound of the two can overcome pure Cu3The brittleness of Sn improves conductive, the thermally conductive and comprehensive mechanical property of microbonding point.
Summary of the invention
Present invention aim to address full Cu3Brittleness when Sn compound is connect for three generations's semiconductor device chip with substrate
Greatly, the problem of electric conductivity, heating conduction difference and poor mechanical property, a kind of High-temperature Packaging Cu is designed3Sn/ foam copper is compound to be connect
The connector thermal conductivity of head, acquisition is high, and resistivity is low, good mechanical properties, Properties of High Temperature Creep is good, deelectric transferred ability is high,
It is low in cost, it can satisfy high-volume requirement, can be widely applied to three generations's semiconductor packages.
The present invention solves the problems, such as that scheme is: using foam copper as skeleton, tin alloy is as packing material, according to a certain percentage
Composite soldering is made, by the effect of additional energy field, is quickly obtained by generated in-situ Cu3Sn with react after remaining three dimensional network
The microbonding point that network Cu is combined.
Composite-joint provided by the present invention may be implemented for IGBT, LED, and photovoltaic module etc. is reliable between substrate
Connection, with Cu3Sn is complete, and compound connector is compared, and composite soldering has higher conductivity, thermal conductivity, while having good power
Performance, high temperature creep-resisting, deelectric transferred performance are learned, it is low in cost, it can satisfy high-volume requirement, can be widely applied to
Three generations's semiconductor packages.
Detailed description of the invention
Fig. 1 is composite soldering production schematic diagram.
Fig. 2 is composite soldering welding schematic diagram.
Fig. 3 is composite welding SEM micro-organization chart after welding.
Fig. 4 is composite welding EDX energy spectrum analysis figure after welding.
Claims (6)
1. a kind of High-temperature Packaging Cu3The preparation method of Sn/ foam copper composite-joint, which is characterized in that key step includes:
(a) cleaning of foam copper and tin alloy particles: by commercial tin alloy (99.3% bronze medal 0.7% of tin) and foam copper (100ppi) point
It is not soaked in acetone soln, is cleaned by ultrasonic 5min, the greasy dirt for defoam copper and tin alloy particles surface；It later will be above-mentioned
Foam copper and tin alloy particles are soaked in respectively in the hydrochloride alcohol solution that mass concentration is 0.5%, are cleaned by ultrasonic 5min, are used for
Remove oxide on surface；Above-mentioned foam copper and tin alloy particles are soaked in the nitric acid wine that mass concentration is 0.5% respectively later
In smart solution, it is cleaned by ultrasonic 5min, for removing surface indissoluble chloride；Finally above-mentioned foam copper and tin alloy particles are distinguished
It is soaked in alcoholic solution, is air-dried after ultrasonic cleaning 5min spare；
(b) it is put into crucible in the tin alloy particles that step (a) obtains, is that heating is molten on 300 DEG C of heated at constant temperature platforms in temperature
Change；
(c) step (a) is obtained into foam copper using double roller cold press and is compressed to 0.2mm from a thickness of 1mm；
(d) (c) is obtained after compressed foam copper smears scaling powder and immerses 10s in step (b) acquisition tin alloy molten liquid；
(e) (d) is obtained into tin alloy and foam copper compound structure weld tabs and is compressed to 100 at 300 DEG C, 600MPa using hot press
μm, cut into the weld tabs of 1 × 1mm；
(f) Sn foil is placed in the weld tabs two sides for obtaining (e), is then placed on DBC substrate, and chip is placed in (e) acquisition
On weld tabs, chip and DBC substrate are carried out with prepared composite soldering at 300 DEG C, 0.5MPa by modes such as thermocompression bondings
Welding.
2. a kind of High-temperature Packaging Cu according to claim 13The preparation method of Sn/ foam copper composite-joint, feature exist
In: the specific steps of the step (a):
(1) tin alloy includes but is not limited to pure tin, 99.3% copper content of Theil indices, 0.7% tin alloy, one of SAC brazing filler metal or
It is several；
(2) foam copper material includes but is not limited to fine copper, brass, the one or more of nickel；
(3) foam copper aperture is between 5~500ppi, and thickness is between 0.1~40mm, and porosity is between 50~98%.
3. a kind of High-temperature Packaging Cu according to claim 13The preparation method of Sn/ foam copper composite-joint, feature exist
In: the specific steps of the step (b):
(1) tin alloy particles fusing mode includes but is not limited to heated at constant temperature platform, the modes such as vacuum drying oven；
(2) tin alloy particles melting vessel includes but is not limited to crucible；
(3) tin alloy particles fusion temperature is between 250~500 DEG C.
4. a kind of High-temperature Packaging Cu according to claim 13The preparation method of Sn/ foam copper composite-joint, feature exist
In: the specific steps of the step (c):
(1) compress mode of foam copper includes but is not limited to double roller cold press, the modes such as hydraulic press；
(2) compressed thickness of foam copper is between 0.2~1mm.
5. a kind of High-temperature Packaging Cu according to claim 13The preparation method of Sn/ foam copper composite-joint, feature exist
In: the specific steps of the step (e):
(1) compress mode of composite construction weld tabs includes but is not limited to hot press, the modes such as vacuum hotpressing stove；
(2) compression temperature of composite construction weld tabs is between 250~500 DEG C；
(3) compression pressure of composite construction weld tabs is between 50~600MPa；
(3) the compressed thickness of composite construction weld tabs is between 10~300 μm.
6. a kind of High-temperature Packaging Cu according to claim 13The preparation method of Sn/ foam copper composite-joint, feature exist
In: the specific steps of the step (f):
(1) chip and DBC substrate welding manner include but is not limited to the side such as heated at constant temperature platform, Reflow Soldering, wave-soldering, thermocompression bonding
Formula；
(2) chip and DBC substrate welding temperature are between 250~500 DEG C；
(3) chip and DBC substrate welding pressure are between 0.5~100MPa.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910619082.0A CN110315161B (en) | 2019-07-10 | 2019-07-10 | Cu for high-temperature packaging3Preparation method of Sn/foam copper composite joint |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910619082.0A CN110315161B (en) | 2019-07-10 | 2019-07-10 | Cu for high-temperature packaging3Preparation method of Sn/foam copper composite joint |
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| Publication Number | Publication Date |
|---|---|
| CN110315161A true CN110315161A (en) | 2019-10-11 |
| CN110315161B CN110315161B (en) | 2021-03-26 |
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111702368A (en) * | 2020-06-23 | 2020-09-25 | 哈尔滨工业大学(深圳)(哈尔滨工业大学深圳科技创新研究院) | Preparation method and packaging method of metal aerogel-based preformed soldering lug |
| CN112122804A (en) * | 2020-09-23 | 2020-12-25 | 厦门大学 | Low-temperature rapid non-pressure manufacturing method of high-temperature-resistant joint for packaging power chip |
| CN112157327A (en) * | 2020-10-06 | 2021-01-01 | 哈尔滨理工大学 | Method for rapidly preparing Cu3 Sn/foam copper composite joint under assistance of current |
| CN112191969A (en) * | 2020-10-16 | 2021-01-08 | 哈尔滨理工大学 | High-frequency induction welding rapid preparation Cu3Sn-Cu micro-welding method |
| CN112317972A (en) * | 2020-09-30 | 2021-02-05 | 厦门大学 | Low-temperature rapid manufacturing method of unidirectional high-temperature-resistant welding joint |
| CN113798787A (en) * | 2021-08-30 | 2021-12-17 | 桂林电子科技大学 | Preparation method of all-intermetallic compound joint |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN111702368A (en) * | 2020-06-23 | 2020-09-25 | 哈尔滨工业大学(深圳)(哈尔滨工业大学深圳科技创新研究院) | Preparation method and packaging method of metal aerogel-based preformed soldering lug |
| CN111702368B (en) * | 2020-06-23 | 2022-04-22 | 哈尔滨工业大学(深圳)(哈尔滨工业大学深圳科技创新研究院) | Preparation method and packaging method of metal aerogel-based preformed soldering lug |
| CN112122804A (en) * | 2020-09-23 | 2020-12-25 | 厦门大学 | Low-temperature rapid non-pressure manufacturing method of high-temperature-resistant joint for packaging power chip |
| CN112122804B (en) * | 2020-09-23 | 2021-06-11 | 厦门大学 | Low-temperature rapid non-pressure manufacturing method of high-temperature-resistant joint for packaging power chip |
| CN112317972A (en) * | 2020-09-30 | 2021-02-05 | 厦门大学 | Low-temperature rapid manufacturing method of unidirectional high-temperature-resistant welding joint |
| CN112157327A (en) * | 2020-10-06 | 2021-01-01 | 哈尔滨理工大学 | Method for rapidly preparing Cu3 Sn/foam copper composite joint under assistance of current |
| CN112191969A (en) * | 2020-10-16 | 2021-01-08 | 哈尔滨理工大学 | High-frequency induction welding rapid preparation Cu3Sn-Cu micro-welding method |
| CN113798787A (en) * | 2021-08-30 | 2021-12-17 | 桂林电子科技大学 | Preparation method of all-intermetallic compound joint |
| CN113798787B (en) * | 2021-08-30 | 2022-11-15 | 桂林电子科技大学 | Preparation method of all-intermetallic compound joint |
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