CN110299589A - It is a kind of to divide and times frequency generating method and device - Google Patents
It is a kind of to divide and times frequency generating method and device Download PDFInfo
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- CN110299589A CN110299589A CN201910483013.1A CN201910483013A CN110299589A CN 110299589 A CN110299589 A CN 110299589A CN 201910483013 A CN201910483013 A CN 201910483013A CN 110299589 A CN110299589 A CN 110299589A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P1/00—Auxiliary devices
- H01P1/20—Frequency-selective devices, e.g. filters
- H01P1/213—Frequency-selective devices, e.g. filters combining or separating two or more different frequencies
Abstract
This application discloses a kind of frequency dividings and times frequency generating method and device, and solving the problems, such as frequency dividing, structure is complicated, at high cost, precision and integrated level are low with frequency doubling device.Front end laser, phase region, rear end laser successively integrate on the same substrate；Front end laser, rear end laser mutually inject；The operation wavelength of two lasers is different；The phase region tunes the stiffness of coupling and coupled phase between two lasers by electrode, changes the light injection ratio of two lasers；The driving signal of two lasers be modulated signal, by adjust modulated signal frequency, realize the frequency dividing or frequency multiplication of microwave；The output light of the rear end laser is drawn by the single mode optical fiber, is converted to modulated signal by the photodetector, is exported by the radio-frequency cable.The present invention realizes that simply the modulated signal purity is high of generation, accuracy is strong, compact-sized, performance is stable, at low cost.
Description
Technical field
This application involves optoelectronic areas more particularly to a kind of frequency dividings and times frequency generating method and device.
Background technique
Light microwave transmitting and receiving system be in microwave communication, electronic countermeasure, radar, remote control, remote sensing and many measuring systems extremely
Close important component.As the core of receive-transmit system, frequency multiplication plays system performance with frequency dividing production method and device key
Effect.Since " electronic bottleneck " limits, traditional electrical domain method realize microwave multiple-frequency and frequency dividing usually there are system structures it is complicated,
At high cost, the disadvantages of stability is poor；In addition, the frequency modulating signal (lower than number GHz) generated is lower, phase noise is poor, especially
It, which is that frequency is often put, is twice phase noise deterioration about 6dB；Using optical means realize modulated signal frequency dividing be also with frequency multiplication
A kind of common method, wherein especially based on the optical injection-locked Laser Diode System based on discrete device, but, polarization
Control that cumbersome, structure is complicated, volume is big, power consumption is high, coupling loss is big.If realized with general Monolithic Integrated Laser,
Two lasers are integrated to share same waveguide, same temperature controller on the same chip, then can not be controlled and be realized by temperature
Two-laser wavelength is detuning.
Summary of the invention
The embodiment of the present application provide it is a kind of frequency dividing with times frequency generating method and device, solve frequency dividing and frequency doubling device structure
Complicated, at high cost, precision and the low problem of integrated level.
On the one hand, the embodiment of the present application propose it is a kind of frequency dividing with frequency multiplication generation device, including front end laser, phase region,
Rear end laser, single mode optical fiber, photodetector, radio-frequency cable.
The front end laser, phase region, rear end laser successively integrate on the same substrate.The front end laser,
Rear end laser is connected by phase region, realizes mutually injection；The operating wave of the front end laser and the rear end laser
It is long different；The phase region is active waveguide composition, and phase section length is 200-300 μm, tunes the front end by electrode and swashs
Stiffness of coupling and coupled phase between light device, rear end laser change the front end laser and the rear end laser
Light injects ratio；The driving signal of the front end laser or rear end laser is modulated signal, by the frequency for adjusting modulated signal
Rate realizes the frequency dividing or frequency multiplication of microwave；The output light of the rear end laser is drawn by the single mode optical fiber, by the light
Electric explorer is converted to microwave signal, is exported by the radio-frequency cable.
Preferably, the front end laser and the rear end laser are that the DFB made of reconstruction-equivalent chirp technology swashs
Light device.
Preferably, the front end laser, phase region, rear end laser epitaxial material having the same and structure；It is described
Material epitaxy structure grows to obtain by traditional divalent metal organic compound chemical vapor infiltration to material epitaxy, the material
Expect that epitaxial structure includes n-type substrate, N-type buffer layer, N-shaped limiting layer, strained multiple-quantum-well layer, p-type limiting layer, grating material
Layer, p-type cladding layer, p-type ohmic contact layer, p-type ducting layer, insulating layer and positive and negative electrode.
It preferably, is the first electricity isolated region, the phase region and described between the front end laser and the phase region
It is the second electricity isolated region between the laser of rear end.
Preferably, first electricity isolated region, the second electricity isolated region, front end laser, phase region, rear end laser share
Same ridge waveguide structure；
Preferably, first electricity isolated region and second electricity isolated region are to etch away light using electron beam lithography
Grid structure and ohmic contact layer are made.
Preferably, the length of first electricity isolated region and second electricity isolated region is in 30~80 μ ms.
Preferably, epitaxial material used by the front end laser, phase region, rear end laser is iii-v chemical combination
Object semiconductor material, group IV-VI compound semiconductor materials, is mixed in aluminum semiconductor material II-VI group compound semiconductor materials
It is at least one.
Preferably, wavelength interval < 0.5nm of the front end laser and the rear end laser.
On the other hand, the application also propose it is a kind of frequency dividing with times frequency generating method, be used for the application any one embodiment
Institute's described device comprising the steps of:
The DC bias current for adjusting the front end laser and/or the rear end laser changes the front end laser
Frequency interval and light between device and the rear end laser inject ratio, make described device work in Two Periodic Oscillation state；
Under Two Periodic Oscillation state, make the oscillation of the front end laser and rear end laser collective effect generation
Optical signal mutually locking；
Change the frequency of the modulated signal, modulated signal directly modulates the front end laser or the rear end laser
Device realizes the frequency multiplication of microwave when the frequency modulating signal of frequency source injection moves closer to Two Periodic Oscillation frequency；It moves closer to
When off-resonance frequency, the frequency dividing of microwave is realized.
At least one above-mentioned technical solution that the embodiment of the present application uses can reach following the utility model has the advantages that frequency dividing and frequency multiplication
Generation device implementation method is simple, and the microwave signal spectral purity of generation is high, accuracy is strong, compact-sized, performance is stable, cost
Low, wherein the mutual injection laser of single-chip integration is realized with a low cost.Overcome that traditional discrete device is more, injected system volume
Greatly, the disadvantages of structure is complicated, stability is poor；Improve the control precision of two laser off-resonance frequencies, raising single-chip integration swashs
The productibility and yield rate of light device reduce manufacture difficulty and manufacturing cost.At lower cost, low-quality injection radio frequency letter
It number modulates the front end laser and the rear end laser and realizes that the frequency dividing of high quality and frequency-doubled signal generate.
Detailed description of the invention
The drawings described herein are used to provide a further understanding of the present application, constitutes part of this application, this Shen
Illustrative embodiments and their description please are not constituted an undue limitation on the present application for explaining the application.In the accompanying drawings:
Fig. 1 is frequency dividing and frequency multiplication generation device structural schematic diagram based on the mutual injection laser of single-chip integration；
Fig. 2 is Monolithic Integrated Laser structural schematic diagram；
Fig. 3 is the output spectrum schematic diagram under Two Periodic Oscillation state；
Fig. 4 is the actual effect figure of present invention frequency dividing and times frequency generating method；
Fig. 5 is the control flow chart of present invention frequency dividing and times frequency generating method.
Specific embodiment
To keep the purposes, technical schemes and advantages of the application clearer, below in conjunction with the application specific embodiment and
Technical scheme is clearly and completely described in corresponding attached drawing.Obviously, described embodiment is only the application one
Section Example, instead of all the embodiments.Based on the embodiment in the application, those of ordinary skill in the art are not doing
Every other embodiment obtained under the premise of creative work out, shall fall in the protection scope of this application.
Below in conjunction with attached drawing, the technical scheme provided by various embodiments of the present application will be described in detail.
Fig. 1 is frequency dividing and frequency multiplication generation device structural schematic diagram based on the mutual injection laser of single-chip integration.
The embodiment of the present application propose it is a kind of frequency dividing with frequency multiplication generation device, including front end laser 1, phase region 2, rear end swash
Light device 3, single mode optical fiber 4, photodetector 5, radio-frequency cable 6.
The front end laser, phase region, rear end laser successively integrate on the same substrate.The front end laser,
Rear end laser is connected by phase region, realizes mutually injection；The operating wave of the front end laser and the rear end laser
It is long different；The phase region is active waveguide composition, and phase section length is 200-300 μm, tunes the front end by electrode and swashs
Stiffness of coupling and coupled phase between light device, rear end laser change the front end laser and the rear end laser
Light injects ratio.The driving signal of the front end laser or rear end laser is modulated signal, by the frequency for adjusting modulated signal
Rate realizes the frequency dividing or frequency multiplication of microwave.The output light of the rear end laser is drawn by the single mode optical fiber, by the light
Electric explorer is converted to microwave signal, is exported by the radio-frequency cable.
In the prior art, integration laser production is active waveguide, and passive wave guide combines, complex manufacturing process.This Shen
Please the phase region of embodiment only use active waveguide, avoid active passive waveguide junction complicated in integration laser manufacturing process
It closes.
The light of the front end laser is injected into the laser of rear end by phase region, and the light of rear end laser passes through phase
Area is injected into the laser of front end, and two lasers realize mutually injection, to change the physical characteristic (modulation of two lasers
Bandwidth increases, threshold current reduces, electro-optical efficiency enhancing).Electric current by tuning phase region, which can be changed in phase region, to be carried
The concentration of son is flowed, thus realize the change of refractive index, the variation for the light path for promoting light to propagate in phase region, to realize to preceding
The control of the phase and intensity of the light for holding laser and rear end laser lasing to go out.
In addition, respectively increasing one section of pi at its center in the front end laser and the rear end laser optical grid structure
Phase shift can effectively improve the single-mode behavior of front end laser Yu rear end laser.In manufacturing process, make front end laser certainly
It is less than the optical wavelength of lasing under rear end laser free-running operation by the optical wavelength of lasing under oscillatory regime, to be more advantageous to
Monolithic Integrated Laser realizes injection locking.
In one embodiment of the application, Monolithic Integrated Laser is encapsulated by standard butterfly, shares 7 pins, point
The temperature of integration laser and the electric current in Liang Ge laser area and phase region are not controlled, in encapsulation process, to single-chip integration
The chip of laser is dissociated, and coats highly reflecting films and anti-reflective film in the two sides of integration laser respectively, thus will
More light feedbacks improve the power of Monolithic Integrated Laser output light to rear end laser side, defeated in this integration laser
Light out will finally be exported from rear end laser mouth.
As shown in Figure 1, the modulated signal 71 of external injection, single chip integrated front end laser 1, phase region 2, single-chip integration
Rear end laser 3, outside injection modulated signal 72, single mode optical fiber 4, photodetector 5, RF cable 6.Above-mentioned configuration
In, single chip integrated front end laser, rear end laser and the phase region between two lasers constitute monolithic collection
At the main structure of laser.
It should be noted that the front end is swashed in order to enable device of the present invention to work in Two Periodic Oscillation state
Wavelength interval < 0.5nm of light device and the rear end laser." Two Periodic Oscillation state " described in present specification refers to described
Front end laser combines a kind of oscillatory regime of entrance, double weeks of generation with the rear end laser under mutual light injection condition
Phase oscillating optical signal modulates frequency from spectrally seeing the main oscillations optical wavelength enterprising line frequency modulation being similar in two lasers
Rate is Two Periodic Oscillation frequency.It generally, include the front end laser by modulated signal caused by photodetector beat frequency
Device and the rear end laser off-resonance frequency component and its corresponding order harmonic components (or Two Periodic Oscillation frequency component),
With big bandwidth tuning range, but due to realization mechanism is the nonlinear effect for injecting locked laser, the tune that beat frequency generates
Signal quality processed is poor.
It should be noted that modulated signal 71 and 72 can be injected separately into front end laser or rear end by radio frequency mouth simultaneously
Laser only can also inject rear end laser by 71 injection front end lasers or by 72.If inject simultaneously front end laser and
The frequency of rear end laser, the then modulated signal 71 and 72 for needing to inject is consistent.
Fig. 2 is Monolithic Integrated Laser structural schematic diagram.
The front end laser, phase region, rear end laser share same ridge waveguide structure.The front end laser 1, phase
Position area 2, the epitaxial material having the same of rear end laser 3 and structure.The material epitaxy structure has by traditional divalent metal
Machine compound chemical vapor infiltration grows to obtain to material epitaxy, and the material epitaxy structure includes n-type substrate, N-shaped buffering
Layer, N-shaped limiting layer, strained multiple-quantum-well layer, p-type limiting layer, grating material layer, p-type cladding layer, p-type ohmic contact layer, p-type
Ducting layer, insulating layer and positive and negative electrode.
For example, the front end laser and the rear end laser are the DFB laser made of reconstruction-equivalent chirp technology
Device.Be the first electricity isolated region 8 between the front end laser and the phase region, the phase region and the rear end laser it
Between be the second electricity isolated region 9.First electricity isolated region, the second electricity isolated region, front end laser, phase region, rear end laser
Share same ridge waveguide structure.First electricity isolated region and second electricity isolated region are etched using electron beam lithography
Fall optical grating construction and ohmic contact layer is made.
It should be noted that the length of first electricity isolated region and second electricity isolated region is in 30~80 μ ms
It is interior.Length can make electricity isolated region prevent front end laser and phase region less than 30 μm, and the electrode of phase region and rear end laser is mutual
Mutually interfere.
Single-chip integration three-stage laser includes: n-type substrate 10 on material structure；N-type buffer layer 11；N-shaped limiting layer
12；Strained multiple-quantum-well layer 13；P-type limiting layer 14；Grating material layer 15；P-type cladding layer 16；The highly doped ohmic contact layer of p-type
17；SiO2Insulating layer 18；Front end laser positive electrode 19；Phase region positive electrode 20；Rear end laser positive electrode 21；Negative electrode
22。
It should be noted that in frequency dividing described in the application any one embodiment and frequency multiplication generation device, the front end
Epitaxial material used by laser, phase region, rear end laser is III-V compound semiconductor material, II-VI group chemical combination
Object semiconductor material, group IV-VI compound semiconductor materials at least one of mix aluminum semiconductor material.
Fig. 3 is integration laser Two Periodic Oscillation state exemplary spectrum schematic diagram.
fmFor the main oscillations optical mode of the front end laser, fsIt is described for the main oscillations optical mode of the rear end laser
The difference on the frequency (or off-resonance frequency) of front end laser and the rear end laser is fr；The mutual injection laser of single-chip integration is double
Under rectilinear oscillation state, the oscillating optical signal of generation is similar to the main oscillations in the front end laser and the rear end laser
The multistage optical sideband that signal frequency modulation generates is modulated at mode, and it is f that modulating frequency, which is Two Periodic Oscillation frequency,0(f0=
0.5×fr).Preferably, the frequency dividing is injected into the front end laser or the rear end laser with frequency multiplication generation device
Modulated signal frequency be off-resonance frequency or Two Periodic Oscillation frequency, to realize each lightwave signal under Two Periodic Oscillation state
Injection locking, the frequency dividing and frequency-doubled signal of high quality are obtained by photodetector beat frequency.
Fig. 4 is the actual effect figure of present invention frequency dividing and times frequency generating method.
The driving signal of the front end laser or rear end laser is modulated signal, by the frequency for adjusting modulated signal
Rate makes the frequency off-resonance frequency f for being injected into the modulated signal of the front end laser or the rear end laserrWhen, pass through
Frequency dividing is Two Periodic Oscillation frequency f with frequency doubling device output frequency0Modulated signal, realize microwave frequency division；Make to be injected into described
The frequency of the modulated signal of front end laser or the rear end laser is Two Periodic Oscillation frequency f0When, by frequency dividing and frequency multiplication
Device output frequency is the modulated signal f of off-resonance frequencyr, realize microwave multiple-frequency.
It should be noted that modulated signal can inject front end laser and/or rear end laser by radio frequency mouth.Once
One in front end laser or rear end laser need to be only injected, if injecting front end laser and rear end laser simultaneously,
The frequency for the modulated signal for then needing to inject is consistent.
Fig. 5 is the control flow chart of present invention frequency dividing and times frequency generating method.For the application any one embodiment institute
State institute's device comprising the steps of:
Step 101, the DC bias current for adjusting the front end laser and/or the rear end laser, described in change
Frequency interval and light between front end laser and the rear end laser inject ratio, and described device work is made to shake in binary cycle
Swing state；
In a step 101, the front end laser is manufactured and designed using reconstruction-equivalent chirp technology and the rear end is swashed
Light device is easy to implement the accuracy controlling of Monolithic Integrated Laser operation wavelength；In addition, also needing carefully to tune in specific implementation
The size of phase region bias current between Liang Ge laser area, play front end laser described in further finely regulating with
Off-resonance frequency effect between the rear end laser.
Step 102, under Two Periodic Oscillation state, change the frequency of the modulated signal, make the front end laser and
The oscillating optical signal mutually locking that the rear end laser collective effect generates；The front end laser is directly modulated with modulated signal
Device and/or the rear end laser are realized when the frequency modulating signal of frequency source injection moves closer to Two Periodic Oscillation frequency
The frequency multiplication of microwave；When moving closer to off-resonance frequency, the frequency dividing of microwave is realized.
For example, the modulated signal, can load on the laser of front end, can also load on the laser of rear end.
It should be noted that in this application: the modulated signal for being directly modulated on Monolithic Integrated Laser,
Its modulating frequency is the off-resonance frequency or Two Periodic Oscillation frequency of the front end laser and the rear end laser, described double
Rectilinear oscillation frequency is the half of the front end laser and the rear end laser off-resonance frequency.
The present invention provides a kind of frequency dividings and frequency multiplication generation device and its implementation compact-sized, performance is stable, and
And used Monolithic Integrated Laser is realized with a low cost.The present invention realizes that DFB swashs with Monolithic Integrated Laser mode
The Two Periodic Oscillation of light device overcomes the disadvantages of traditional discrete device is more, injected system volume is big, structure is complicated, stability is poor.
In an embodiment of the present invention, the grating of single-chip integration Distributed Feedback Laser is made using reconstruction-equivalent chirp technology,
The wavelength of two lasers can be accurately controlled by controlling the sampling grating period of μm magnitude, improve the control of off-resonance frequency
Precision processed reduces single-chip integration to improve the productibility and yield rate of Monolithic Integrated Laser Two Periodic Oscillation state
The manufacture difficulty and manufacturing cost of laser.
It should also be noted that, the terms "include", "comprise" or its any other variant are intended to nonexcludability
It include so that the process, method, commodity or the equipment that include a series of elements not only include those elements, but also to wrap
Include other elements that are not explicitly listed, or further include for this process, method, commodity or equipment intrinsic want
Element.In the absence of more restrictions, the element limited by sentence "including a ...", it is not excluded that including described want
There is also other identical elements in the process, method of element, commodity or equipment.
The above description is only an example of the present application, is not intended to limit this application.For those skilled in the art
For, various changes and changes are possible in this application.All any modifications made within the spirit and principles of the present application are equal
Replacement, improvement etc., should be included within the scope of the claims of this application.
Claims (10)
1. a kind of frequency dividing and frequency multiplication generation device, including front end laser, phase region, rear end laser, single mode optical fiber, photoelectricity are visited
Survey device, radio-frequency cable, which is characterized in that
The front end laser, phase region, rear end laser successively integrate on the same substrate；
The front end laser, rear end laser are connected by phase region, realize mutually injection；The front end laser and described
The operation wavelength of rear end laser is different；
The phase region is active waveguide composition, and phase section length is 200-300 μm, tunes the front end laser by electrode
Stiffness of coupling and coupled phase between device, rear end laser change the light of the front end laser Yu the rear end laser
Injection ratio；
The driving signal of the front end laser or rear end laser is modulated signal, real by adjusting the frequency of modulated signal
The frequency dividing or frequency multiplication of existing microwave；
The output light of the rear end laser is drawn by the single mode optical fiber, is converted to microwave letter by the photodetector
Number, it is exported by the radio-frequency cable.
2. frequency dividing and frequency multiplication generation device according to claim 1, which is characterized in that the front end laser and the rear end
Laser is the Distributed Feedback Laser made of reconstruction-equivalent chirp technology.
3. frequency dividing and frequency multiplication generation device according to claim 1, which is characterized in that
The front end laser, phase region, rear end laser epitaxial material having the same and structure；
The material epitaxy structure grows material epitaxy by traditional divalent metal organic compound chemical vapor infiltration
Arrive, the material epitaxy structure include n-type substrate, N-type buffer layer, N-shaped limiting layer, strained multiple-quantum-well layer, p-type limiting layer,
Grating material layer, p-type cladding layer, p-type ohmic contact layer, p-type ducting layer, insulating layer and positive and negative electrode.
4. frequency dividing and frequency multiplication generation device according to claim 1, which is characterized in that the front end laser and the phase
It is the first electricity isolated region between area, is the second electricity isolated region between the phase region and the rear end laser.
5. according to claim 4 frequency dividing with frequency multiplication generation device, which is characterized in that the front end laser, phase region, after
End laser, the first electricity isolated region and the second electricity isolated region share same ridge waveguide structure.
6. frequency dividing and frequency multiplication generation device according to claim 4, which is characterized in that first electricity isolated region and described the
Two electricity isolated regions are made of to etch away optical grating construction and ohmic contact layer using electron beam lithography.
7. frequency dividing described in any one and frequency multiplication generation device according to claim 1~6, which is characterized in that first electricity
Isolated area and the length of second electricity isolated region are in 30~80 μ ms.
8. frequency dividing described in any one and frequency multiplication generation device according to claim 1~6, which is characterized in that swash the front end
Epitaxial material used by light device, phase region, rear end laser is III-V compound semiconductor material, II-VI group compound
Semiconductor material, group IV-VI compound semiconductor materials at least one of mix aluminum semiconductor material.
9. frequency dividing described in any one and frequency multiplication generation device according to claim 1~6, which is characterized in that swash the front end
Wavelength interval < 0.5nm of light device and the rear end laser.
10. a kind of frequency dividing and times frequency generating method, are used for claim 1~9 any one described device, which is characterized in that packet
Containing following steps:
The DC bias current for adjusting the front end laser and/or the rear end laser, change the front end laser and
Frequency interval and light between the rear end laser inject ratio, make described device work in Two Periodic Oscillation state；
Changing the frequency of the modulated signal, modulated signal directly modulates the front end laser or the rear end laser, when
When the frequency modulating signal of frequency source injection moves closer to Two Periodic Oscillation frequency, the frequency multiplication of microwave is realized；It moves closer to detuning
When frequency, the frequency dividing of microwave is realized.
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111007422A (en) * | 2019-12-18 | 2020-04-14 | 青岛航天半导体研究所有限公司 | Method for manufacturing highly integrated electronic frequency divider |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20010030796A1 (en) * | 1997-01-14 | 2001-10-18 | California Institute Of Technology, A California Corporation | Methods and devices based on brillouin selective sideband amplification |
| CN101053130A (en) * | 2004-09-24 | 2007-10-10 | 加布里埃莱·费拉里 | Method and device for optical frequency multiplying factor 1.5 |
| CN101764348A (en) * | 2010-01-07 | 2010-06-30 | 武汉华工激光工程有限责任公司 | Semiconductor pump ultraviolet laser |
| CN102025102A (en) * | 2009-09-23 | 2011-04-20 | 中国计量科学研究院 | Narrow-linewidth laser |
| CN105379159A (en) * | 2013-06-13 | 2016-03-02 | 祥茂光电科技股份有限公司 | Tunable laser with multiple in-line sections |
| CN107210584A (en) * | 2014-11-24 | 2017-09-26 | 祥茂光电科技股份有限公司 | Tunable laser with multiple list type sections including sampling grating |
| CN108598845A (en) * | 2018-03-19 | 2018-09-28 | 中国人民解放军陆军工程大学 | A kind of chirp microwave pulse production method and device |
-
2019
- 2019-06-04 CN CN201910483013.1A patent/CN110299589B/en active Active
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20010030796A1 (en) * | 1997-01-14 | 2001-10-18 | California Institute Of Technology, A California Corporation | Methods and devices based on brillouin selective sideband amplification |
| CN101053130A (en) * | 2004-09-24 | 2007-10-10 | 加布里埃莱·费拉里 | Method and device for optical frequency multiplying factor 1.5 |
| CN102025102A (en) * | 2009-09-23 | 2011-04-20 | 中国计量科学研究院 | Narrow-linewidth laser |
| CN101764348A (en) * | 2010-01-07 | 2010-06-30 | 武汉华工激光工程有限责任公司 | Semiconductor pump ultraviolet laser |
| CN105379159A (en) * | 2013-06-13 | 2016-03-02 | 祥茂光电科技股份有限公司 | Tunable laser with multiple in-line sections |
| CN107210584A (en) * | 2014-11-24 | 2017-09-26 | 祥茂光电科技股份有限公司 | Tunable laser with multiple list type sections including sampling grating |
| CN108598845A (en) * | 2018-03-19 | 2018-09-28 | 中国人民解放军陆军工程大学 | A kind of chirp microwave pulse production method and device |
Non-Patent Citations (2)
| Title |
|---|
| SZE-CHUN CHAN等: "Microwave Frequency Division and Multiplication Using an Optically Injected Semiconductor Laser", 《IEEE JOURNAL OF QUANTUM ELECTRONICS》 * |
| 毛嵩: "基于光注入半导体激光器产生窄线宽微波信号", 《中国优秀硕士学位论文全文数据库 信息科技辑》 * |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111007422A (en) * | 2019-12-18 | 2020-04-14 | 青岛航天半导体研究所有限公司 | Method for manufacturing highly integrated electronic frequency divider |
| CN111007422B (en) * | 2019-12-18 | 2022-08-05 | 青岛航天半导体研究所有限公司 | Method for manufacturing highly integrated electronic frequency divider |
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| CN110299589B (en) | 2021-11-09 |
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