CN107210584A - Tunable laser with multiple list type sections including sampling grating - Google Patents

Tunable laser with multiple list type sections including sampling grating Download PDF

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Publication number
CN107210584A
CN107210584A CN201580072166.7A CN201580072166A CN107210584A CN 107210584 A CN107210584 A CN 107210584A CN 201580072166 A CN201580072166 A CN 201580072166A CN 107210584 A CN107210584 A CN 107210584A
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China
Prior art keywords
laser
section
wavelength
grating
sampling
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CN201580072166.7A
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Inventor
郑军
克劳斯·亚历山大·安索姆
张焕林
迪恩·麦因托希·朵希
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Applied Optoelectronics Inc
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Applied Optoelectronics Inc
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Priority claimed from US14/551,353 external-priority patent/US10020636B2/en
Application filed by Applied Optoelectronics Inc filed Critical Applied Optoelectronics Inc
Publication of CN107210584A publication Critical patent/CN107210584A/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4087—Array arrangements, e.g. constituted by discrete laser diodes or laser bar emitting more than one wavelength
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
    • H01S5/0625—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes in multi-section lasers
    • H01S5/06255—Controlling the frequency of the radiation
    • H01S5/06258—Controlling the frequency of the radiation with DFB-structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H01S5/1206—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers having a non constant or multiplicity of periods
    • H01S5/1215—Multiplicity of periods
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4031—Edge-emitting structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/50—Amplifier structures not provided for in groups H01S5/02 - H01S5/30
    • H01S5/5027—Concatenated amplifiers, i.e. amplifiers in series or cascaded
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/028—Coatings ; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers
    • H01S5/0287—Facet reflectivity
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/0607—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying physical parameters other than the potential of the electrodes, e.g. by an electric or magnetic field, mechanical deformation, pressure, light, temperature
    • H01S5/0612—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying physical parameters other than the potential of the electrodes, e.g. by an electric or magnetic field, mechanical deformation, pressure, light, temperature controlled by temperature
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H01S5/1206—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers having a non constant or multiplicity of periods
    • H01S5/1209—Sampled grating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H01S5/124—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers incorporating phase shifts

Abstract

A kind of tunable laser with the multiple list type sections for including sampling grating, the semiconductor laser main body with multiple list type laser sections is generally included, is configured as independent driving to produce the laser for a wavelength being located in each different wave-length coverages.There is sampling grating in each list type section identical screen periods and different sampling periods to produce different wavelength.Responded with temperature change, the wavelength of the light produced in each laser section is tuned to the channel wavelength in each range of channels.By optionally producing one of laser section or multiple light, one or more channel wavelengths are selected to be used for lasing and transmitting.By using the sampling grating with identical screen periods in multiple list type sections, the tunable laser of multiple sections can be more easily manufactured.

Description

Tunable laser with multiple list type sections including sampling grating
The application is the part continuation application for the U.S. Patent Application No. 13/916,652 submitted on June 13rd, 2013, its Full content is incorporated herein by reference.
Technical field
The present invention on tunable laser, especially it is a kind of there are the multiple list type sections for including sampling grating can Tuned laser, is configured as tuning for wavelength-division multiplex (wavelength in the channel wavelength of multiple different range division multiplexed；WDM EPON (Passive Optical Network)；PON it is tunable in) Emitter or transceiver.
Background technology
Once optical communication network was typically the network of " point-to-point " type, including the emitter connected by optical fiber and reception Machine.This network is relatively easily constructed, but is equipped with many optical fiber to connect multiple users.With the user with this network connection Number increases and fiber count increases sharply, and being equipped with and manage many optical fiber becomes complicated and expensive.
By using such as optical line terminal of the transmitting terminal from network (Optical Line Terminal, OLT) to far reaching Single " trunk (the trunk) " optical fiber of 20 kilometers or more of remote branch point, EPON solves this problem.Exploitation One challenge of this EPON is effective capacity using trunk optical fiber, so as to transmit maximum possible on trunk optical fiber The information of quantity.Using wavelength-division multiplex on different wave length by different optical signal multiplexers, optical fiber communication network can increase It is added in the information content carried on single optical fiber.For example, in the EPON (WDM-PON) of wavelength-division multiplex, single trunk The optical signal of multichannel wavelength is carried to optical branch point by optical fiber, and carries the light letter of the multichannel wavelength from optical branch point Number, and by being directed to the signal of individual consumer or different wave length from individual consumer, branch point provides simple road By function.In each customer location, ONT Optical Network Terminal (optical networking terminal；) or optical network unit ONT (optical networking unit；ONU one or more channel wavelengths) are allocated to send and/or receive light letter Number.
However, the challenge in the EPON of wavelength-division multiplex is to design a kind of network, it is allowed in any customer location ONT Optical Network Terminal or optical network unit in use identical emitter.For the ease of matching somebody with somebody in the EPON of wavelength-division multiplex Put and safeguard, be desired to have the ONT Optical Network Terminal/optical network unit (ONT/ of " colourless " that its wavelength can be changed or tune ONU), such single device can be used in any ONT/ONU on EPON.Utilize the ONT/ONU of " colourless ", operator Member, which needs only to have, can be provided in single, the general emitter or transceiver devices of any customer location.
In wavelength-division multiplex system or network such as WDM-PON, one or more tunable laser are used to be directed to light The different wavelength of signal behavior.In these years develop a variety of different types of tunable laser, but most of quilts Develop and connected for the backbone network of high power capacity to realize that high-performance and cost are of a relatively high.With high power capacity, the wavelength-division of long range Multiplex system is compared, many WDM-PON apply have relatively low data rate and shorter transmission range, therefore lower-performance and The laser of lower cost can then be met.However, when be used to cover in WDM-PON with respect to wide scope channel (for example, 16 Channel) when, the relatively low tunable laser of expense often meets with challenge.For example, by controlling the tuned expense of temperature Relatively low distributed feedback laser, only about 0.1nm/ DEG C of wavelength change.16 channel ripples are covered using this laser Grow the temperature range, it is necessary to 120 DEG C.
The content of the invention
Brief description of the drawings
By reading detailed description below and combining schema, these and other feature is better understood with and excellent Point, wherein：
Fig. 1 be meet this exposure embodiment include the optical WDM communication of at least one Multi sectional tunable laser The schematic diagram of system.
Fig. 2 be meet this exposure embodiment the wavelength-division multiplex including at least one Multi sectional tunable laser it is passive The schematic diagram of optical-fiber network.
Fig. 3 is the schematic diagram for the Multi sectional tunable laser for meeting this exposure embodiment.
Fig. 4 is the Multi sectional tunable laser with grating in each laser section for meeting this exposure embodiment The schematic diagram of device.
Fig. 5 A and Fig. 5 B are the running schematic diagram of the Multi sectional tunable laser shown in Fig. 4.
Fig. 6 be meet this exposure embodiment have the Multi sectional of grating and phase shift tunable in each laser section The schematic diagram of laser.
Fig. 6 A are the wavelength spectrum and lasing point related to a section in the Multi sectional tunable laser shown in Fig. 6 Figure.
Fig. 7 be meet another embodiment of this exposure have the Multi sectional of grating and phase shift can in each laser section The schematic diagram of tuned laser.
Fig. 7 A are the wavelength spectrum and lasing point related to a section in the Multi sectional tunable laser shown in Fig. 7 Figure.
Fig. 8 A and Fig. 8 B are the running schematic diagram of the Multi sectional tunable laser shown in Fig. 6 and Fig. 7.
Fig. 9 is the schematic diagram for the Multi sectional tunable laser with sampling grating for meeting another embodiment of this exposure.
Figure 10 A and Figure 10 B are the laser area with sampling grating for the offer phase shift for meeting this exposure another embodiment The schematic diagram of section.
Figure 11 A to Figure 11 C are the signal of the example of the manufacture method of the Multi sectional tunable laser with sampling grating Figure.
Embodiment
The tunable laser with the multiple list type sections for including sampling grating for meeting embodiment described herein is led to Often include semiconductor laser main body, with multiple list type laser sections, be configured as independent driving with different each The laser of multiple wavelength is produced in individual wave-length coverage.Sampling grating in each list type section have identical screen periods and The different sampling periods is to produce different wavelength.Responded with temperature change, the ripple of the light produced in each laser section The long channel wavelength being tuned in each wave-length coverage.By optionally produce laser section it is one or more in Light, selects one or more channel wavelengths to be used for lasing and transmission.By using in multiple list type sections have same light The sampling grating of grid cycle, can more easily manufacture Multi sectional tunable laser.
For example, it can be used in tunable transmitter with the adjustable of the multiple list type sections for including sampling grating Humorous laser, produce and combine with the optical signal for the channel wavelength for producing selection and/or in the optical sender of multiplexing it is multiple not The optical signal of cochannel wavelength.In one kind application, the tunable laser with multiple list type sections is used for wavelength division multiplexed light In optical sender or transceiver in system.For example, the tunable laser with multiple list type sections is used for wavelength-division In tunable transmitter or transceiver in multiplex system, such as the ONT Optical Network Terminal in the EPON of wavelength-division multiplex (ONT) it is that ONT Optical Network Terminal/optical network unit selects suitable transmission channel wavelength or in optical network unit (ONU).As an example Son, the tunable laser with multiple list type sections is additionally operable to the optical line terminal in the EPON of wavelength-division multiplex (OLT), to provide multiple optical signals of different channels wavelength.
" channel wavelength " used herein refers to the wavelength related to optical channel and includes the certain wave on centre wavelength periphery It is long.In one example, standard is such as International Telecommunication Union (International Telecommunication Union, ITU) It is that ITU-T high density wavelength-division multiplex (DWDM) grid (grid) defines channel wavelength.It is used herein " be tuned to channel ripple It is long " refer to adjustment laser output, the laser so launched includes this channel wavelength." list type section " used herein refers to sharp The section placed in light device along a line, another section of light penetration so from a section, and not necessarily require this A little sections are continuous.Term as used herein " coupling " refers to the modes such as any connection, coupling, link, and " optical coupling " refers to coupling Another element can be transferred to by closing the light so from an element.This " coupling " device not necessarily directly connects with another Connect, and can be separated by the intermediate module or device for manipulating or changing these signals." thermal coupling " used herein refers to Direct or indirect connection or contact between two components, cause heat to be transmitted to another component from a component.
It refer to and the optical WDM communication system 100 for meeting this exposure embodiment is show and described in Fig. 1, figure, wrap Include one or more Multi sectional tunable laser 101.Wavelength-division multiplex system 100 includes one or more terminals 110,112, coupling Together in trunk optical fiber or every one end in path 114, for launching on backbone optical path footpath 114 and receiving different channels wavelength Optical signal.The terminal 110,112 of every one end of wavelength-division multiplex system 100 includes and different channels (for example, Ch.1 to Ch.n) Related one or more emitters 120 are (for example, TX1To TXn) and receiver 122 (for example, RX1To RXn), at one or Launch and receive the optical signal of different channels wavelength between multiple terminals 110,112.
Each terminal 110,112 includes one or more emitters 120 and receiver 122, emitter 120 and receiver 122 can separate or be integrated into a transceiver in terminal.The light multiplexing of every one end of wavelength-division multiplex system 100 The optical signal of different channels wavelength is combined and separated by device/demultiplexer 116,118.The wavelength-division-multiplexed optical signal of aggregation includes group The channel wavelength of conjunction, carries the wavelength-division-multiplexed optical signal of this aggregation on backbone optical path footpath 14.Emitter 120 it is one or more It can be tunable transmitter, Multi sectional tunable laser 101 can be used to be tuned to suitable channel wavelength.Therefore, Emitter 120 is configured to general, tunable emitter, the diverse location that can be used in wavelength-division multiplex system 100 with And the position in wavelength-division multiplex system 100 is tuned to suitable channel wavelength.
Fig. 2 is refer to, meeting one or more Multi sectional tunable laser of this exposure embodiment is used for wavelength-division multiplex EPON 200 in emitter and/or transceiver in.The EPON 200 of wavelength-division multiplex uses wavelength-division multiplex system System provides the optical-fiber network framework of point-to-multipoint.According to one embodiment of the EPON 200 of wavelength-division multiplex, by optical fiber, Waveguide and/or path 214,215-1 to 215-n, at least one optical line terminal 210 are coupled in multiple ONT Optical Network Terminals (ONT) Or optical network unit (ONU) 212-1 to 212-n.Optical line terminal 210 includes one or more multi-channel optical transceivers 102a、102b.Multi sectional tunable laser is used in ONT Optical Network Terminal/optical network unit and/or in optical line terminal 210, To allow to tune channel wavelength, it will be described in more detail below.
Optical line terminal 210 is located at the central office (central office) of the EPON 200 of wavelength-division multiplex, light net Network unit (ONU) 212-1 to 212-n is located at family, business or other types of customer location or management place.Branch point Backbone optical path footpath 214 is coupled to the light path 215-1 to 215-n of separation to be coupled to each use by 213 (for example, remote nodes) The optical network unit 212-1 to 212-n of family position.Branch point 113 includes one or more passive coupling arrangements, such as optical branching Device (splitter) or optical multiplexer/demultiplexer.In one example, optical network unit 212-1 to 212-n is located at distance light About 20 kilometers of road terminal 210 or the position less than 20 kilometers.
The EPON 200 of wavelength-division multiplex also includes extra node or network equipment, such as Ethernet passive optical network Network (EPON) or gigabit passive optical network (GPON) node or device, are coupled in branch point 213 and diverse location or manage field Optical network unit 212-1 between 212-n.A kind of application of the EPON 200 of wavelength-division multiplex is to provide optical fiber and arrived Room (Fiber To The Home, FTTH) or fiber entering household (Fiber To The Premises, FTTP), can be across jointly Platform transmission audio, data and/or Video service.In this application, central office is with providing these audios, data and/or video One or more sources or network coupling.
In the EPON 200 of wavelength-division multiplex, different optical network unit 212-1 to 212-n is allocated different Channel wavelength is for launching and receive optical signal.In one embodiment, the use of EPON 200 of wavelength-division multiplex is different Wavelength range transmits downlink and uplink optical signal with relative optical line terminal 210, with avoid the signal that is received on same optical fiber and Interference between the transmission signal of back-reflection.For example, L- wave bands (for example, about 1565 to 1625 nanometers) are used to come from light The downlink transfer of line terminal 210, and C- wave bands (e.g., from about 1530 to 1565 nanometers) are used for optical line terminal 210 Row transmission.Up and/or down channel wavelength generally corresponds to International Telecommunication Union (ITU) grid.In one example, upstream wavelength 100GHz ITU grids are directed at, and ITU grid of the downstream wavelength with respect to 100GHz is slightly displaced from.
Therefore, optical network unit 212-1 to 212-n is allocated different channel wavelengths in L- wave bands and in C- wave bands. Transceiver or receiver in optical network unit 212-1 to 212-n are configured as receiving L- wave bands (for example, λL1、λL2、… λLn) in optical signal at least one channel wavelength.Transceiver or emitter in optical network unit 212-1 to 212-n Transmitting C- wave bands are configured as (for example, λC1、λC2、…λCn) in optical signal at least one channel wavelength.Other wavelength or ripple Long-wave band is also in the range of system and method as described herein.
Branch point 213 is by the descending wavelength-division-multiplexed optical signal from optical line terminal 210 (for example, λL1、λL2、…λLn) solution Multiplexing, for the channel wavelength of separation is transferred into respective optical network unit 212-1 to 212-n.Or, branch point 213 Descending wavelength-division-multiplexed optical signal is provided to each optical network unit 212-1 to 212-n, and each optical network unit 212-1 is extremely 212-n is separated and the distributed optical channel wavelength of processing.Individual other optical signal is encrypted avoid not to particular optical network list Eavesdropping on the optical channel of member distribution.Branch point 213 also believes the up light from each optical network unit 212-1 to 212-n Number combination or be multiplexed, using on the backbone optical path footpath 214 to optical line terminal 210 as up wavelength-division-multiplexed optical signal (for example, λC1、λC2、…λCn) transmission.
Optical network unit 212-1 one embodiment includes laser 216 and photodetector (photodetector) 218. Laser 216 is used for the up channel wavelength (λ of distributionC1) transmission optical signal.Photodetector 218 is, for example, photodiode, With the down channel wavelength (λ of distributionL1) receive optical signal.The Multi sectional that laser 216 includes meeting embodiment described herein can Tuned laser, is configured as example being tuned to the channel wavelength of distribution by changing the temperature of laser 216.This reality Apply duplexer (diplexer) 217 and photodetector 218 that the optical network unit 212-1 of example also includes coupling with laser 216 And the C+L band filters 219 coupled with duplexer 217, it is allowed to optical network unit 212-1 receives L- band channel wavelength (λL1) and optical network unit 212-1 transmitting C- band channel wavelength (λC1).Optical network unit 212-1 also includes temperature control system System, for controlling the temperature of laser 216 and laser driving circuit for driving laser 216.
Optical line terminal 210 is configured as producing different channels wavelength (for example, λL1、λL2、…λLn) multiple optical signals, And optical signal set is combined into the descending wavelength-division-multiplexed optical signal carried on trunk optical fiber or path 214.Each optical link is whole Multi-channel optical transceiver 202a, 202b is held to include multi-channel optical emitter sub-assembly (TOSA) 220, to produce and combine many letters The optical signal of road wavelength.Optical line terminal 210 is additionally configured to the up wavelength-division-multiplexed optical signal that will be carried on trunk path 214 Different channels wavelength is separated into (for example, λC1、λC2、…λCn) optical signal, and receive separation optical signal.Therefore, Mei Yiguang Line terminal multi-channel optical transceiver 202a, 202b include multi-channel optical receiver sub-assembly (ROSA) 230, to separate and connect Receive the optical signal of multiple channel wavelengths.
One embodiment of multi-channel optical emitter sub-assembly 220 includes the array of laser 222, by respective radio frequency Data-signal (TX_D1 to TX_Dm) is modulated to produce respective optical signal.Laser 222 includes multi-region described herein Section tunable laser.The various modulation techniques modulation laser 222 that can be used including external modulation and directly modulate.Recovery With the such as array waveguide grating of device 224 (arrayedwaveguide grating；AWG), by each different down channel ripples Length is (for example, λL1、λL2、…λLm) optical signal combination.Channel ripple is arrived by the thermal tuning laser 222 for changing laser 222 It is long.Optical sender sub-assembly 220 also includes temperature control system, for controlling the temperature of laser 222 and multiplexer 224 to tie up Hold desired wavelength accuracy or accuracy.
In shown embodiment, optical line terminal 210 further comprises multiplexer 204, for that will be received and dispatched from multichannel The multiplexing optical signal of multi-channel optical emitter sub-assembly 220 in device 202a and many in other multichannel transceiver 202b The multiplexing optical signal multiplexing of channel optical sender sub-assembly, to produce descending set wavelength-division-multiplexed optical signal.
One embodiment of multi-channel optical receiver sub-assembly 230 includes demultiplexer 232, for separating each up letter Road wavelength is (for example, λC1、λC2、…λCn).The array of the such as photodiode of photodetector 234 detects the up letter of each separation The optical signal of road wavelength and the data-signal (RX_D1 to RX_Dm) that reception is provided.In shown embodiment, optical line terminal 210 further comprise demultiplexer 206, for up wavelength-division-multiplexed optical signal to be demultiplexing as into the first and second wavelength division multiplexed lights Signal, is provided to each multi-channel optical receiver sub-assembly in each transceiver 202a, 202b.Optical line terminal 210 is also Including duplexer 208, between trunk path 214 and multiplexer 204 and demultiplexer 206, such trunk path 214 is carried Uplink and downlink channel wavelength.Transceiver 202a, 202b also include other components, such as laser driver, trans-impedance amplifier (transimpedance amplifier；TIA) and control interface, for launching and receiving optical signal.
In one example, each multi-channel optical transceiver 202a, 202b are configured as launching and receive 16 channels, so The EPON 200 of wavelength-division multiplex supports 32 descending L- band channels wavelength and 32 up C- band channels wavelength.Ripple One example of the EPON 200 of point multiplexing uses on-off keying (on-off keying) as modulation scheme, operation in 1.25G bauds (baud).Other data rates and modulation scheme can also be used.
As described above, the channel wavelength that the channel wavelength of uplink and downlink is crossed on 100GHz International Telecommunication Union's grid Scope.For example, each transceiver 202a, 202b cover 16 channels in the L- wave bands for optical sender sub-assembly Wavelength and for 16 channel wavelengths in the C- wave bands of photoreceiver sub-assembly, such transceiver 202a, 202b are collectively covered 32 channels.Therefore, multiplexer 204 is by 16 channels from transceiver 202a and 16 from another transceiver 202b Channel is combined, and demultiplexer 206 answers the wavelength-division that the wavelength-division-multiplexed optical signal of 32 channels is separated into two 16 channels Use optical signal.For the ease of the use of multiplexer 204 and demultiplexer 206, the pars intermedia of the scope of channel wavelength in this scope Part can skip channel.According to an example of the multi-channel optical transceiver used in the EPON 200 of wavelength-division multiplex, phase The wavelength accuracy or accuracy of prestige are ± 0.05 nanometer, and desired operating temperature is between -5 and 70 DEG C.
Fig. 3 is refer to, Multi sectional tunable laser 300 is described more fully, can be used in wavelength-division multiplex system example In such as EPON of wavelength-division multiplex.Multi sectional tunable laser 300 includes semiconductor laser main body 302, in rear end Face (back facet) extends between 304 and front end face 306.Laser bodies 302 include multiple list types can thermal tuning swash Light device section 310-1 to 310-n, from rear end face 304, end face 306 is arranged as " list type (in line) " forward.Below will be more detailed Carefully it is been described by, for example, through use different chamber length and/or optical grating construction, each list type laser area Section 310-1 to 310-n is configured as producing laser in each different wave-length coverages.Each list type laser section 310- 1 to 310-n adjoins with the list type laser sections of one or more adjoinings, and such laser bodies 302 are formed as single-piece.Change Yan Zhi, on the same chip co-manufactured list type laser section 310-1 to 310-n.
Although illustrated embodiment represents the laser section 310-1 to 310-n with almost identical length, laser section The one or more of 310-1 to 310-n have different length.Although illustrated embodiment represents three laser sections, multi-region Section tunable laser can include the list type laser section of other numbers.
Each list type laser section 310-1 to 310-n can be thermally tuned, so each wave-length coverage wherein it In one, the wavelength X according to selectionsThe channel wavelength of such as selection, laser is launched from the front end face 306 of laser bodies 302.Can The laser that tuned laser 300 is launched is predominantly located at the wavelength X of selectionsThe light quilt at wavelength beyond place, the channel of selection Minimize to improve performance (for example, reduction noise).The laser that tunable laser 300 is launched also is filtered, to remove essence Whole wavelength beyond part or selection wavelength.
Laser driver circuit 320 electrically connects each laser section 310-1 to 310-n, each sharp for independent driving One of the laser section 310-1 to 310-n of light device section 310-1 to 310-n to produce selection and positioned at each wavelength In the range of laser.Laser driver circuit 320 includes the circuit for being configured as driving semiconductor laser, enough by application Driving or operating current (Iop) to trigger lasing.For example, in optical sender, laser driver circuit 320 utilizes telecommunications Number such as rf-signal modulation laser section 310-1 to 310-n is each first, the modulation light of the channel wavelength to produce selection Signal.
Pass through the higher drive current higher than threshold current (for example, 12 milliamperes), it is sufficient to cause selection or active laser Lasing in device section, one of the laser section 310-1 to 310-n of selection is (that is, with the channel wavelength including selection Wave-length coverage laser section) driven.One or more of other laser section 310-1 to 310-n are closed, or Person is driven according to the relatively low driving current less than the threshold current for causing lasing.For example, active laser device section is with after Laser section between end face 404 is closed.When the laser penetration from active laser device section, active laser device section Laser section between front end face 306 is driven with this relatively low driving current, sufficiently transparent to reduce loss, but is not had Lasing.
Temperature control system 330 is thermally coupled in each laser section 310-1 to 310-n, for each laser of thermal tuning Device section 310-1 to 310-n is to the wavelength selected in each wave-length coverage.With temperature change respond, using can be tuned to choosing The arbitrary disposition or technology of standing wave length, thermal tuning laser section 310-1 to 310-n.Temperature control system 330 include one or Multiple temperature control equipments such as TEC (thermoelectric coolers；TEC) and/or resistance heater, use In the temperature for changing each laser section, it is sufficient to change the wavelength produced in that laser section.It can use same Temperature control equipment uses the individual temperature control equipment with each laser section 310-1 to 310-n thermal couplings, change Each laser section 310-1 to 310-n temperature.Temperature control system 330 also includes temperature sensor and/or wavelength monitoring Device and control circuit.For example, circuitorder temperature control equipment design temperature is controlled, so as to respond tunable laser The monitoring wavelength that monitoring temperature or response tunable laser 300 at 300 are launched.
As illustrated, for example, laser section 310-1 is driven and tuned to produce range of wavelengths lambda1–λxInterior The laser of one channel wavelength, laser section 310-2 is driven and tuned to produce range of wavelengths lambdax–λyAn interior letter The laser of road wavelength, and laser section 310-n are driven and tuned to produce range of wavelengths lambday–λzAn interior channel The laser of wavelength.Therefore, one of driving and thermal tuning section 310-1 to 310-n, Multi sectional tunable laser are passed through The 300 channel wavelength λ for producing and launching the selection from z channel wavelengthss.By using with each different wavelength models The multisequencing formula enclosed can thermal tuning laser section 310-1 to 310-n, tunable laser 300 can be in less temperature model The channel wavelength of wider range is tuned in enclosing.
One has in the example of 16 channels, and Multi sectional tunable laser 300 includes 3 list type laser areas Section, each wave-length coverage each covers about 4 nanometers and including at least five channel wavelength.Although wavelength with temperature drift is usual It is that the wavelength of each laser section can be changed about 0.1nm/ DEG C in the function of material property, an example.Therefore, Using the same temperature ranges stated of about 40 DEG C of Δ, in each different wave-length coverages of C- wave bands, each laser section should This is tuned to about 5 or 6 different channel wavelengths.
As shown in Figure 4, for example with distributed feedback (distributed feedback；DFB) laser is similar, multi-region One embodiment of section tunable laser 400 is using different optical grating constructions to produce the laser of each different wavelength.It is many Section tunable laser 400 includes semiconductor laser main body 402, can thermal tuning laser section with multiple list types 410-1 is to 410-3, including each grating section 414-1 to 414-3 along semiconductor active region 412-1 to 412-3.Partly lead Body active region 412-1 to 412-3 includes multiple quantum well active regions or other gain medias, can launch and cross over wavelength The light spectral of scope and the light amplification that gain media can be will reflect back into.Grating section 414-1 to 414-3 has grating Structure (for example, screen periods, refractive index and length), produces the light in each range of channels.For example, grating section 414-1 to 414-3 includes the known Bragg-grating structure used in diffraction or distributed feedback laser, in cloth By by the light distributed feed-back of Bragg reflection at glug wavelength.
As illustrated, each grating section 414-1 to 414-3 has different knots corresponding from each different wave-length coverages Structure (for example, different screen periods).In shown example, the first grating section 414-1 in first laser device section 410-1 It is configured as reflecting λ1–λ5The second grating in light in wave-length coverage at bragg wavelength, second laser section 410-2 Section 414-2 is configured as reflecting λ6–λ10Light in wave-length coverage at bragg wavelength, and the 3rd laser section 410- The 3rd grating section 414-3 in 3 is configured as reflecting λ11–λ16Light in wave-length coverage at bragg wavelength.Laser area Section 410-1 to 410-3 is thermally tuned, to change the bragg wavelength and selection excitation wavelength of respective wave-length coverage internal reflection.
It is used as the reflection in grating section 414-1 to 414-3 and the result of feedback, although each laser section 410-1 Occur lasing, laser outflow laser section 410-1 to 410-3 and effective laser cavity (laser cavity) in 410-3 It is longer than active laser section.Because the front end face 406 for lasing need not reflect, front end face 406 includes anti-reflective Penetrate (anti-reflective；AR) coating, such as reflectivity with below about 1% reflectance factor.Therefore, the laser of selection Laser produced by one of device section 410-1 to 410-3 is sent from front end face 406.When laser section has enough During reflectivity, rear end face 404 also includes ARC.In other embodiment, rear end face 404 is included with least about 80% High reflection (the highly reflective of reflectivity；HR) coating, so as to reflect most laser to front end face 406.No matter Which kind of situation, rear end face 404 allows a part of laser penetration rear end face 404 for monitoring.In other embodiment, when first swash Light device section 410-1 and/or second laser section 410-2 and non-active or when being closed, penetrate the light of rear end face 404 It is not enough to for monitoring purposes.
The running of the embodiment of Multi sectional laser 400 is shown in more detail in Fig. 5 A and Fig. 5 B.In order to select this First wave length range lambda in individual example1–λ5In channel wavelength λ2(Fig. 5 A), higher driving current (IOPH) it is applied to first Laser section 410-1, and relatively low driving current (IOPL) it is applied to other laser section 410-2,410-3.With First laser device section 410-1 to be driven, first laser device section 410-1 temperature is provided so that first laser device area Section 410-1 is thermally tuned the channel wavelength λ for selection2.The light produced in first laser device section 410-1 is by the first grating region Section 414-1 reflections, and in first laser device section 410-1 untill there is lasing.Then, the channel wavelength of selection λ2The laser at place spreads out of first laser device section 410-1 and launched from front end face 406.Relatively low driving current is in by driving (IOPL) other sections 410-2,410-3, with selected channel wavelength X2These sections of laser penetration when, damage can be reduced Consumption.In order to select first wave length range lambda1–λ5In other channel wavelengths, can by change temperature further tune it is tunable Laser 400.
In order to select second wave length range lambda6–λ10In channel wavelength λ8(Fig. 5 B), higher driving current (IOPH) applied It is added to second laser section 410-2, relatively low driving current (IOPL) it is applied to other laser sections 410-1,410-3. Or, the laser section 410-1 between active laser device section 410-2 and rear end face 404 is closed.With second laser Section 410-2 is driven, and second laser section 410-2 temperature is set so that second laser section 410-2 is warm It is tuned as the channel wavelength λ of selection8.The light produced in second laser section 410-2 is anti-by the second grating section 414-2 Penetrate, and in second laser section 410-2 untill there is lasing.Then, the channel wavelength λ of selection8Place swashs Light spreads out of second laser section 410-2 and launched from front end face 406.By with relatively low driving current (IOPL) drive it He is section 410-1,410-3, with the channel wavelength λ of selection8Laser penetration these sections, it is possible to decrease loss.In order to select Second wave length range lambda6–λ10In another channel wavelength, can further tune tunable laser 400 by changing temperature. By similarly drive with the laser section 410-3 of thermal tuning the 3rd, it is also an option that wavelength range λ11–λ16In letter Road wavelength.
As fig. 5 a and fig. 5b, driven and in active laser section, lasing occurring according to selected wavelength, still Because light spreads out of the two ends of lasing section, laser cavity effectively extends between rear end face 404 and front end face 406.Therefore, The reflections affect laser performance of grating from non-active section.
In one embodiment, the laser section 410-1 to 410-3 in Multi sectional tunable laser 400 has difference Length.Those skilled in the art judge for tune each various lasers section 410-1 to 410-3 performance (for example, Efficiency and threshold current) length.The laser section 310-1 of different length is provided to 310-n, can also reduce has from non- The back-reflection of source range (for example, second section 410-2 and the 3rd section 410-3 shown in Fig. 5 A) is tunable to Multi sectional to swash The influence of the mode stability of light device 400.In one example, first laser device section 410-1 has 300 microns of length, the Dual-laser device section 410-2 has 400 microns of length, and the 3rd laser section 410-3 has 500 microns of length.
Although the advantage of the embodiment of the Multi sectional tunable laser 400 shown in Fig. 4 is without expansion temperature range Wavelength tuning range can be expanded, similar with the grating in distributed feedback laser, grating section 414-1 to 414-3 can be with Cause degradation modes.The presence of these degradation modes causes multi-mode running, uncertain pattern or moding, sometimes It is referred to as mode degeneracy (mode degeneracy).
The Multi sectional tunable laser 600,700 of other embodiment shown in Fig. 6 and Fig. 7 uses different grating knots Structure, these optical grating constructions are provided the phase shift of laser and operated with the monotype of suppression mode degeneracy and the selected wavelength of offer.One In embodiment, phase shift is almost the bragg wavelength (λ of grating sectionB) place laser pi/2 optical phase shift because Bradley lattice wave Long λBThe pi/2 phase shift at place, which is equal in optical grating construction, increases Λ/2=λB/(4ne) section, so also referred to as a quarter The phase shift of wavelength or λ/4, wherein Λ is the cycle of grating, neFor the effective refractive index of the waveguide with grating.It is used herein The optical shift of " λ/4 phase shift " laser for referring to same phase be about pi/2 or equal parts, mode degeneracy is adequately suppressed to provide At bragg wavelength or the running of neighbouring monotype.Term " λ/4 phase shift " is it is not essential that accurately corresponding with λ/4 or pi/2 Phase shift, the monotype running that is accurately located at bragg wavelength, or the phase place change of grating in itself.Term " λ/4 phase shift " Also without the phase shift of single λ/4, but multiple less scattered phase shifts for being equal to the phase shift of λ/4 can be included (for example, two The phase shift of λ/8).Although representative embodiment refers to the phase shift of λ/4, the Multi sectional tunable laser of other embodiment can be provided Other phase shifts of monotype running can be provided.
By including pi/2 phase shift section in grating, Multi sectional tunable laser 600 shown in Fig. 6 provides the phase of λ/4 Move.Multi sectional tunable laser 600 includes laser bodies 602, with " the sequence between rear end face 604 and front end face 606 Multiple laser section 610-1 to 610-3 of row " extension.Laser section 610-1 to 610-3 is included along semiconductor active region Domain 612-1 to 612-3 backward grating section 614-1 to 614-3 and forward direction grating region section 615-1 to 615-3.By at one Grating is overturn the phase shift of λ/4, backward light are introduced in 180 ° (that is, increasing the section of Λ/2), the laser reflected between grating section Grid region section 614-1 to 614-3 and forward direction grating region section 615-1 to the phase shift section 616-1 to 616-2 between 615-3 provide pi/2 Pattern displacement.
In addition to grating is overturn into 180 ° at phase shift section 616-1 to 616-3, backward grating section 614-1 is extremely 614-3 and forward direction grating region section 615-1 to 615-3 can be also separated by the blank section without grating.Utilize phase shift section 616-1 to 616-3 separates backward grating section 614-1 to 614-3 with forward direction grating region section 615-1 to 615-3, can produce Distributed bragg reflector mirror (DBR) similar functions, so penetrate sharp chamber and are in just in each laser section of lasing.It is shown In embodiment, backward grating section 614-1 to 614-3 is long to grating region section 615-1 to 615-3 than before, so that in each laser The higher reflectivity of the backward offer of device section.Those skilled in the art is relative to section 615-1 to the 615-3 choosings of forward direction grating region Backward grating section 614-1 to 614-3 length is selected, the balance between efficiency and mode stability is used as.In this embodiment, Rear end face 604 and front end face 606 are respectively provided with ARC.
The grating stiffness of coupling of grating section is in 1-4 scope in Multi sectional tunable laser 600, is particularly located in In 2-3 scope." grating stiffness of coupling " used herein is the numerical value without unit, is described generally as coupling parameter κ (one As with centimetre negating cm-1Measurement) it is multiplied by length l.In some embodiments, each different grating section is (for example, 614-1,615- 1st, 614-2,615-2,614-3,615-3) also there is different stiffness of couplings to improve performance.
As shown in the wavelength spectrum 650 in Fig. 6 A, unless suppressed degradation modes by introducing the phase shift of λ/4, otherwise highest reflects Rate is at the bragg wavelength of peak value, but lasing appears in one or two degeneration lasing mould that dotted line 654 is marked At formula.By providing the phase shift of λ/4 into 610-3 in each laser section 610-1, Multi sectional tunable laser 600 suppresses Single excitation wavelength (lasing at degeneration excitation mode 654, and locking bragg wavelength indicated by arrow 652 Wavelength), so as to provide monotype running.As described above, for each laser section 610-1 to 610-3 Bradley Lattice wave length (thus excitation wavelength 652) changes with temperature change.
Although the embodiment of the Multi sectional tunable laser 600 shown in Fig. 6 is in each multiple list type laser sections Interior offer monotype running, two separate in the grating in itself each section of interior manufacture phase shift needs grating and meet with manufacture Problem.By providing the section (that is, no-raster section) without grating, but the phase of optical grating construction does not have any change, Fig. 7 Shown Multi sectional tunable laser 700 provides the phase shift of λ/4 in laser.Multi sectional tunable laser 700 includes laser Device main body 702, with multiple laser section 710-1 to 710-3, " sequence " prolongs between rear end face 704 and front end face 706 Stretch.Laser section 710-1 to 710-3 includes the backward grating section 714-1 along semiconductor active region 712-1 to 712-3 To 714-3, no-raster section 716-1 to 716-3 and forward direction grating region section 715-1 to 715-3.
Backward grating section 714-1 to 714-3 and forward direction grating region section 715-1 to 715-3 grating for each other " same to phase ", Length between the backward section forward direction grating region of no-raster section 716-1 to 716-3 coverings, otherwise will be with to miss screen periods The same phase of screen periods of backward and forward direction grating region section.Therefore, no-raster section 716-1 to 716-3 has with grating section not With effective refractive index because no-raster section 716-1 to 716-3 rear to grating section 714-1 to 714-3 and forward direction grating Section 715-1 misses extension on screen periods to a considerable amount of between 715-3, so effectively providing scattered phase-shifted region Section.Therefore, no-raster section 716-1 to 716-3 provides the phase shift of λ/4, it is not necessary to backward grating section 714-1 to 714-3 and before To grating section 715-1 to the change of the actual raster phase between 715-3, and need not backward and forward direction grating region Duan Dan Solely be formed as with different screen periods.
By being initially formed rear to grating section 714-1 to 714-3 with forward direction grating region section 715-1 between 715-3 Continuously, it is uniform that there is the grating for expecting screen periods, part grating (for example, by chemical etching) is then removed, nothing is formed Grating section 716-1 to 716-3.The offer phase of λ/4 is provided in U.S. Patent number 6,608,855 and 6,638,773 The example of the forming method of the no-raster structure of shifting and this no-raster structure, above-mentioned data is all merged in one as this paper Point.
In this embodiment, backward grating section 714-1 to 714-3 is long to grating region section 715-1 to 715-3 than before, nothing Grating section 716-1 to 716-3 is shorter than backward grating section 714-1 to 714-3 and ratio is preceding to grating region section 715-1 to 715-3 It is long.Therefore, backward and forward direction grating region section as operated as distributed bragg reflector mirror (that is, rear mirror and outgoing mirror), with Individual lasing cavity is formed in each lasing section 710-1 to 710-3.In other words, longer backward grating section 714-1 is extremely 714-3 provides enough reflectivity to be operated as rearview mirror, and shorter forward direction grating region section 715-1 to 715-3 provides foot Enough reflectivity cause lasing and also allow laser emitting to be operated as outgoing mirror.Because backward grating section provides foot Enough reflectivity, rear end face 704 is not required to highly-reflective coating to be coated.In this embodiment, rear end face 704 and front end face 706 It is coated with cloth ARC.
In one example, backward grating section 714-1 to 714-3 has about 150 microns of length, forward direction grating region section 715-1 to 715-3 has about 50 microns of length, and no-raster section 716-1 to 716-3 has about 100 microns of length. For example, each grating is about 0.2 micron, and there is backward grating section 750 gratings and forward direction grating region section to have 250 gratings.Other sizes and configuration are also possible to and belonged in the range of this exposure.
As shown in Fig. 7 A wavelength spectrum 750, unless suppressed degradation modes by introducing the phase shift of λ/4, highest reflectivity goes out At the bragg wavelength of present peak value, but lasing is at one or two degeneration excitation mode indicated by dotted line 754. In this embodiment, no-raster section 716-1 to 716-3 provides the phase shift of approximate λ/4, suppress degeneration lasing mode 754 with And be locked at the single excitation wavelength indicated by arrow 752, the bragg wavelength in peak value or be slightly displaced from.Although swashing Ejected wave length 752 is not precisely located at the bragg wavelength of peak value, and no-raster section 716-1 to 716-3 provides enough phase shifts Degenerated with suppression mode, cause monotype to operate.As described above, for each laser section 710-1 to 710-3 Prague Wavelength (thus excitation wavelength 752) is varied with temperature and changed.
The running of the embodiment of Multi sectional tunable laser 600,700 is shown in more detail in Fig. 8 A and Fig. 8 B.With Above-mentioned running related to Fig. 5 B Fig. 5 A is similar, by driving suitable laser section and setting the appropriate temperature for thermal tuning Degree, selects a channel wavelength.As shown in Figure 8 A, for example, by applying higher driving current (IOPH), driving correspondence Laser section, such as with including channel wavelength λ2Wave-length coverage (for example, λ1–λ5), select a channel wavelength λ2。 Relatively low driving current (IOPL) be applied between other laser sections and/or active laser device section and rear end face Any laser section is closed.In one example, higher driving current (IOPH) it is about 40 milliamperes, and relatively low drive Streaming current (IOPL) it is about 6 milliamperes.As corresponding laser section is driven, temperature is set so that corresponding laser Device section is thermally tuned as the selected channel wavelength X in wave-length coverage2。
As shown in 8B figures, by driving corresponding laser section, with including channel wavelength λ8Wave-length coverage (example Such as, λ6–λ10), then design temperature is with thermal tuning to that wavelength X8, different channel wavelength λ can be selected8.As illustrated, In these embodiments, by above-mentioned forward and backward grating section, in the individual lasing cavity only formed in lasing section Given wavelength is selected lasing occur.Therefore, lasing cavity does not extend into the rear end face and front end face of these Multi sectional tunable laser.
In other embodiment, between each laser section of Multi sectional tunable laser 600, such as first laser device Section 610-1 and second laser section 610-2 and second laser section 610-2 and the 3rd laser section 610-3 it Between extra phase shift section can be provided.From non-active laser section (for example, second shown in Fig. 8 A and the 3rd laser Section) grating reflection feedback to active laser device section (for example, first laser device section shown in Fig. 8 A), cause pattern The problem of stability.Therefore, extra phase shift is provided between laser section (that is, except the phase-shifted region in laser section Beyond section) performance of laser can be improved.The phase-shift phase that these extra phase shift sections are provided depends on other design ginsengs The length of numerical example such as lasing section.
Electron beam Writing Technology is used to produce complicated grating in Multi sectional tunable laser 600,700, but this Plant manufacturing process slow and expensive.Fig. 9 is refer to, another embodiment of Multi sectional tunable laser 900 includes sampling grating Section 914-1 to 914-3, each list type laser section 910-1 formed in semiconductor laser main body 902 is extremely In 910-3.Whole laser section 910-1 is into 910-3, and sampling grating section 914-1 to 914-3 has identical grating week Phase (Λg), but different sampling period (Λs1、Λs2、Λs3).Because using identical screen periods, more detail below The simplified manufacturing process of ground description.
In Multi sectional tunable laser 900, along the semiconductor active region 912-1 in semiconductor laser main body 902 To 912-3 formation sequence formulas laser section 910-1 to 910-3.Semiconductor active region 912-1 to 912-3 includes multiple amounts Sub- trap active region or other gain medias, can launch the light spectral for crossing over wave-length coverage and can will reflect back into increasing The light amplification of beneficial medium.When driving current is applied to each laser section, sampling grating section 914-1 to 914-3 With produce each wave-length coverage in light optical grating construction and parameter (for example, screen periods, the sampling period, refractive index and Length).Multi sectional tunable laser 900 also includes rear end face 904 and front end face 906, for emitting laser section 910-1 The laser produced into 910-3 each one.Similar to the above embodiments, rear end face 404 has ARC or high reflection Coating, and front end face 906 have ARC.
Sampling grating section 914-1 to 914-3 each includes periodic optical grating construction 916-1 to 916-3, is adopted by each Sample grating section 914-1 provide Different sampling period (Λ into 914-3s1、Λs2、Λs3) white space 918-1 to 918-3 Separation.Each sampling grating section 914-1 to 914-3 also has different dutycycles (duty cycle).Dutycycle is one The length of optical grating construction and the ratio in sampling period are (for example, L in sampling periodg1/Λs1).The example of these parameters can be light Grid cycle ΛgFor 240 nanometers, sampling period Λs1、Λs2And Λs3Respectively 6.1,6.7 and 5.3 microns, and dutycycle is 50%.
In shown example, the first sampling grating section 914-1 in first laser device section 910-1 is configured as reflection λ1–λ5The second sampling grating section 914-2 in the light of bragg wavelength in wave-length coverage, second laser section 910-2 It is configured as reflecting λ6–λ10The 3rd in the light of bragg wavelength in wave-length coverage, and the 3rd laser section 910-3 Sampling grating section 914-3 is configured as reflecting λ11–λ16The light of bragg wavelength in wave-length coverage.Laser section 910-1 to 910-3 is thermally tuned to change the reflected bragg wavelength and selection excitation wavelength in each wave-length coverage. Therefore, the embodiment of Multi sectional tunable laser 900 can be operated according to the same way of above-described embodiment.
Although illustrated embodiment represents the Multi sectional tunable laser with three laser section 910-1 to 910-3 900, but Multi sectional tunable laser 900 can have the laser section 910-1 to 910-3 of other numbers.List type swashs Light device section 910-1 to 910-3 is also without neighbouring as shown in the figure.Multi sectional tunable laser 900 also includes other sections (for example, between laser section or at laser end), such as providing gain is used to amplify in laser area Other gain sections of the light produced in section.
As illustrated in figs. 10 a and 10b, the embodiment of the Multi sectional tunable laser 1000,1000 ' with sampling grating is also The phase shift of laser is provided the single-mode operation for selecting wavelength is provided with suppression mode degeneracy.As described above, phase shift is sampling grating Bragg wavelength (the λ of sectionB) place laser pi/2 optical phase shift, the phase shift of also referred to as λ/4.For example by sampling grating The sampling period is shifted in section, the phase shift of λ/4 can be obtained in sampling grating section.As shown in Figure 10 A, by swashing At least one optical grating construction 1016a is extended into half of sampling period in the sampling grating section 1014 of light device section 1010, multi-region One embodiment of section tunable laser 1000 provides the phase shift of λ/4.In sampling grating section 1014, the sampling period is in extension Optical grating construction 1016a before and after it is identical.As shown in Figure 10 B, by the sampling grating section 1014 by laser section 1010 Optical grating construction 1016 between at least one white space 1018a extend half of sampling period, the Multi sectional of another embodiment Tunable laser 1000 ' provides the phase shift of λ/4.In sampling grating section 1014, white space of the sampling period in extension It is identical before and after 1018a.
It can use and write simpler process to manufacture the Multi sectional tunable laser with sampling grating than electron beam Device 900,1000,1000 '.By shifting the substrate grating pattern (base grating pattern) with screen periods, The continuous substrate grating with screen periods is formed at least one semiconductor layer of semiconductor laser main body.Then, pass through Multiple sampled lights are formed on sampling grating pattern of the transfer with the sampling period, the substrate grating at least one semiconductor layer Grid region section.For example, using holographic lithography to use photosensitive or Other substrate materials formation substrate grating pattern and sampling grating Pattern.Holographic lithography includes that the ultraviolet for being exposed for the Other substrate materials to form pattern or other radiation can be changed, for example Use the known photoetching technique for being used to manufacture Prague or diffraction grating in semiconductor laser.In other embodiment, pass through Holographic exposure formation substrate grating and sampling grating section, such as using being used to manufacture Prague in known semiconductor laser Or phase mask during diffraction grating.
Figure 11 A to Figure 11 C are refer to, the system of the Multi sectional tunable laser including sampling grating is described more fully Make an example of method.As shown in Figure 11 A, semiconductor laser main body 1102 includes form active region 1112 multiple half Conductor layer 1104,1106,1108, for example, meet known distribution reaction type (DFB) or distributed bragg reflector mirror (DBR) is partly led Body diode laser.Extending along active region 1112 or parallel at least one semiconductor layer of active region 112 Sampling grating section is formed in 1108.
As shown in Figure 11 A, the first time of radiation 1120, which is exposed on to be formed in Other substrate materials 1122, has screen periods (Λg) substrate grating pattern.The first time exposure of radiation 1120 can be holographic exposure, use known holographic lithography Form interference figure corresponding with substrate grating pattern.Then, as shown in Figure 11 B, the substrate grating in Other substrate materials 1122 Pattern is transferred to semiconductor layer 1108, parallel with active region 1112 with screen periods (Λ to be formedg) continuous base Back light grid 1116.Using known photoetching technique such as by the way that Other substrate materials 1122 are developed and utilized with substrate grating pattern Semiconductor layer 1108 is etched, can be with transfer substrate grating pattern.
As shown in Figure 11 B, being exposed on for the second time in Other substrate materials 1132 for radiation 1130 forms sampling grating pattern, There is Different sampling period (Λ in different sections corresponding from various lasers section 1010-1 to 1010-3s1、Λs2、Λs3)。 Second of exposure of radiation 1130 can also be the holographic exposure using known holographic lithography, be formed and sampling grating figure The corresponding interference figure of case.In other embodiment, mask such as phase mask can be used to be exposed, with Other substrate materials Middle formation grating pattern.
Then, the sampling grating pattern in Other substrate materials 1132 is transferred to semiconductor layer 1108, and is added to To form sampling grating section 1114-1 to 1114-3 on continuous substrate grating 1116, as shown in Figure 11 C.Use known light Lithography by Other substrate materials 1132 such as by developing and etching semiconductor layer 1108 with continuous substrate grating 1116 Upper formation sampling grating pattern, sampling grating pattern is shifted.The grating pattern migration period of sampling is eliminated into substrate Grating 1116, so that there is sampling period (Λ into 1114-3 in each sampling grating section 1114-1s1,Λs2,Λs3) substrate White space 1118 is formed between the fragment of grating 1116.Therefore, using simpler than electron beam write-in and less expensive two Lithography step, can form sampling grating section 1114-1 to 1114-3.
Although two lithography steps are only used only in this example, other changes of method can also use extra step Suddenly.This method can also use different technologies, for forming substrate grating and for forming sampling grating section.It is this Method further comprises extra step, such as the end face (for example, using ARC) of coating semiconductor laser bodies And offer is electrically connected to each laser section (for example, through wire bonding).
Therefore, the Multi sectional for meeting the list type laser section with sampling grating of embodiment described herein is tunable Laser provides relatively cheap laser, and wdm applications can be tuned in relatively wide scope, and Identical simple process can be used to be manufactured.
A kind of tunable laser for meeting one embodiment is included in the semiconductor extended between front end face and rear end face Laser bodies.Laser bodies include multiple list type laser sections, are each configured as independent driving to produce difference Each wave-length coverage in wavelength laser.Laser produced by one of laser section of each selection is from front end Surface launching.Each of list type laser section includes semiconductor active region, is used to amplify each ripple by stimulated emission The light of the wavelength of long scope, and along the sampling grating section of active region.Sampling grating section is configured as producing each The wavelength of wave-length coverage.Sampling grating section in list type laser section has identical screen periods, and list type Sampling grating section in laser section has the different sampling periods respectively.
Meeting a kind of optical network unit of another embodiment includes photodetector, and channel wavelength is received for receiving one Optical signal, and tunable laser, the optical signal for launching a launch channel wavelength.Receive channel wavelength and be in L- ripples In section or one of C- wave bands, and launch channel wavelength is in L- wave bands or C- wave bands in another.Tunable laser Including semiconductor laser main body, extend between front end face and rear end face.Laser bodies include multiple list type lasers Section, is each configured as being operated alone producing the laser of a wavelength in each different wave-length coverages.Each choosing Laser produced by one of laser section selected is launched from front end face.Each of list type laser section includes half Conductor active region, is used for the light for amplifying wavelength in each wave-length coverage by stimulated emission, and along active region Sampling grating section.Sampling grating section is configured as producing the wavelength of each wave-length coverage.In list type laser section There is sampling grating section the sampling grating section in identical screen periods, and list type laser section to have respectively not The same sampling period.
Meeting a kind of wavelength-division multiplex system of another embodiment includes multiple terminals, related from each different channel wavelengths And be configured as launching optical signal on each different channel wavelengths.It is tunable sharp that multiple terminals at least one includes at least one Light device, is configured as being tuned to the channel wavelength of respective one.Tunable laser is included between front end face and rear end face The semiconductor laser main body of extension.Laser bodies include multiple list type laser sections, are each configured as individually drive The dynamic laser to produce the wavelength in each different wave-length coverages.One of laser section of each selection is produced Raw laser is launched from front end face.Each of list type laser section includes semiconductor active region, passes through stimulated emission For the light for the wavelength for amplifying each wave-length coverage, and along the sampling grating section of active region.Sampling grating section It is configured as producing the wavelength of each wave-length coverage.Sampling grating section in list type laser section has identical grating Sampling grating section in cycle, and list type laser section has the different sampling periods respectively.
A kind of production method for the Multi sectional list type tunable laser for meeting another embodiment is provided.This method bag Include：Semiconductor laser main body, including multiple semiconductor layers, front end face and rear end face are provided, wherein semiconductor layer formation is partly led Body active region；Continuous substrate grating, substrate grating tool are formed in the semiconductor layer parallel with active region at least one There are screen periods；And form multiple sampling grating sections in substrate grating, wherein sampling grating section has different each In the individual sampling period, to form multiple list type laser sections, it is configured as producing the laser of different wave length.
Although there have been described herein the principle of the present invention, it will be apparent to an ordinarily skilled person in the art that this explanation is only Illustrate and be not intended to limit the scope of the invention.In addition to shown and description representative embodiment, in the model of the present invention It is envisioned that other embodiments in enclosing.The modification of one of one of ordinary skill in the art or replacement are considered as in this hair In bright scope, the scope of the present invention is not limited by claims below.

Claims (25)

1. a kind of tunable laser, including：
Semiconductor laser bodies, extend between a front end face and a rear end face, and the laser bodies include multiple sequences Column laser section, is each configured as independent driving to produce the laser of a wavelength in each different wave-length coverages, And the laser produced by one of the laser section of each of which selection is from the front end surface launching, and wherein sequence Each of formula laser section includes：
Semiconductor active region, by stimulated emission, the light for amplifying the wavelength in each wave-length coverage；And
One sampling grating section, parallel with active region, the sampling grating section is configured as producing in each wave-length coverage The wavelength；And
Sampling grating section wherein in list type laser section has identical screen periods, and wherein list type laser Sampling grating section in device section has the different sampling periods respectively.
2. tunable laser as claimed in claim 1, it is characterised in that the sampling in each of laser section Grating section provides a phase shift of the laser between the front end and a rear end of the sampling grating section, and wherein described phase Shifting, which is configured to supply, is selecting the monotype of given wavelength to operate.
3. tunable laser as claimed in claim 2, it is characterised in that the phase shift provides the phase shift of the λ of laser/4.
4. tunable laser as claimed in claim 3, it is characterised in that each of laser section has different ripples It is long.
5. tunable laser as claimed in claim 3, it is characterised in that further comprise laser section each it Between extra phase shift section.
6. tunable laser as claimed in claim 1, it is characterised in that the multiple list type laser section includes three Individual laser section.
7. tunable laser as claimed in claim 1, it is characterised in that described each different wave-length coverage each includes At least five channel wavelengths.
8. tunable laser as claimed in claim 1, it is characterised in that responded with temperature change, the multiple list type Each of laser section can be tuned, and wavelength is selected to produce one in each wave-length coverage.
9. tunable laser as claimed in claim 8, it is characterised in that described each different wave-length coverage is included at least Five channel wavelengths, and wherein each of laser section can be tuned to described at least five using identical temperature range One of individual channel wavelength.
10. tunable laser as claimed in claim 1, it is characterised in that described each different wave-length coverage includes C- Channel wavelength in wave band.
11. tunable laser as claimed in claim 1, it is characterised in that the front end face and the rear end face include anti- Reflectance coating.
12. a kind of optical network unit, including：
One photodetector, the optical signal for receiving channel wavelength, wherein the reception channel wavelength is in L- ripples In one of section or C- wave bands；And
One tunable laser, the optical signal for launching a launch channel wavelength, wherein the launch channel wavelength is in In another of L- wave bands or C- wave bands, the tunable laser includes semiconductor laser bodies, in a front end face and Extend between one rear end face, laser bodies include multiple list type laser sections, be each configured as being operated alone with Produce the laser of a wavelength in different each wave-length coverage, and each of which selection one of laser section institute From the front end surface launching, and wherein, each of list type laser section includes the laser of generation：
Semiconductor active region, passes through stimulated emission, the light of the wavelength for amplifying each wave-length coverage；And
One sampling grating section, parallel with active region, the sampling grating section is configured as producing each wave-length coverage The wavelength；And
The sampling grating section wherein in list type laser section has identical screen periods, and wherein list type The sampling grating section in laser section has the different sampling periods respectively.
13. optical network unit as claimed in claim 12, it is characterised in that the sampled light of the laser section in each Grid region section provides a phase shift of the laser between the front end and a rear end of grating section, and wherein described phase shift is configured as Offer selects the monotype of given wavelength to operate.
14. optical network unit as claimed in claim 12, it is characterised in that responded with temperature change, laser section it is every The wavelength of light produced by one can be tuned to the launch channel wavelength in each wave-length coverage.
15. a kind of wavelength-division multiplex system, including：
Multiple terminals are related from different each channel wavelength and be configured as launching on described each different channel wavelength Optical signal, the multiple terminal at least one include an at least tunable laser, an at least tunable laser It is configured as being tuned to the channel wavelength of respective one, tunable laser includes：
Semiconductor laser bodies, extend between a front end face and a rear end face, and laser bodies include multiple list types Laser section, is each configured as being operated alone producing the laser of the wavelength in each different wave-length coverages, and Laser produced by one of laser section of each of which selection is from the front end surface launching, and wherein list type Each of laser section includes：
Semiconductor active region, by stimulated emission, the light for amplifying the wavelength in each wave-length coverage；And
One sampling grating section, parallel with active region, the sampling grating section is configured as producing each described wavelength model The wavelength in enclosing；And
The sampling grating section wherein in list type laser section has identical screen periods, and wherein list type The sampling grating section in laser section has the different sampling periods respectively.
16. wavelength-division multiplex system as claimed in claim 15, it is characterised in that the sampling of the laser section in each Grating section provides a phase shift of the laser between the front end and a rear end of grating section, and wherein described phase shift is configured The monotype of given wavelength is selected to operate to provide.
17. wavelength-division multiplex system as claimed in claim 15, it is characterised in that responded with temperature change, laser section The wavelength of light produced by each can be tuned to the launch channel wavelength in each wave-length coverage.
18. wavelength-division multiplex system as claimed in claim 17, it is characterised in that the multiple terminal includes being located at wavelength-division multiplex EPON in ONT Optical Network Terminal.
19. wavelength-division multiplex system as claimed in claim 18, it is characterised in that further comprise：
At least one optical line terminal, being configured as receiving includes the set wavelength-division-multiplexed optical signal of the channel wavelength；
At least one branch point, is coupled between optical line terminal and multiple ONT Optical Network Terminals, and branch point is configured as combining institute State the optical signal of channel wavelength；And
One backbone optical path footpath, coupling optical line terminal and branch point.
20. a kind of production method of Multi sectional tunable laser, methods described includes：
Semiconductor laser bodies are provided, the semiconductor laser main body includes multiple semiconductor layers, a front end face and one Rear end face, wherein semiconductor layer formation semiconductor active region；
A continuous substrate grating is formed in the semiconductor layer parallel with active region at least one；And
Multiple sampling grating sections are formed at least one of substrate grating of semiconductor layer, wherein sampling grating section has There is the different respective sampling periods to form multiple list type laser sections, be configured as producing the laser of different wave length.
21. the production method of Multi sectional tunable laser as claimed in claim 20, it is characterised in that form described continuous Substrate grating include one first holographic lithography step, and wherein form the multiple sampling grating section including one second complete Cease lithography step.
22. the production method of Multi sectional tunable laser as claimed in claim 20, it is characterised in that form described continuous Substrate grating include radiation one first exposure, with change with screen periods a substrate grating pattern in one first sense Luminescent material and the substrate grating pattern is shifted to semiconductor layer at least one to form the substrate grating with screen periods, And one second exposure that the multiple sampling grating section includes radiating wherein is formed, have the one of the sampling period to adopt to change A photosensitive material in sample grating pattern and by the sampling grating pattern transferring semiconductor layers at least one to form sampling Grating.
23. the production method of Multi sectional tunable laser as claimed in claim 20, it is characterised in that form described continuous Substrate grating include one first holographic exposure, and wherein form the multiple sampling grating section and holographic exposed including one second Light.
24. the production method of Multi sectional tunable laser as claimed in claim 23, it is characterised in that use phase mask Perform first holographic exposure and second holographic exposure.
25. the production method of Multi sectional tunable laser as claimed in claim 20, it is characterised in that formed the multiple Sampling grating section, which is included in sampling grating section at least one, forms a phase shift.
CN201580072166.7A 2014-11-24 2015-11-24 Tunable laser with multiple list type sections including sampling grating Pending CN107210584A (en)

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Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106099639A (en) * 2016-08-26 2016-11-09 武汉光迅科技股份有限公司 A kind of multi-wavelength array laser and manufacture method thereof and using method
CN110299589A (en) * 2019-06-04 2019-10-01 中国人民解放军陆军工程大学 It is a kind of to divide and times frequency generating method and device
CN111799649A (en) * 2020-06-12 2020-10-20 芯思杰技术(深圳)股份有限公司 Method and device for controlling wavelength of photodiode
WO2021249541A1 (en) * 2020-06-12 2021-12-16 芯思杰技术(深圳)股份有限公司 Photodiode and chip thereof, chip manufacturing method, and wavelength control method and apparatus

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5413884A (en) * 1992-12-14 1995-05-09 American Telephone And Telegraph Company Grating fabrication using electron beam lithography
US20030169785A1 (en) * 2002-03-11 2003-09-11 Jong-Ryeol Kim Wavelength-tunable laser apparatus
US20050031009A1 (en) * 2003-08-07 2005-02-10 San-Liang Lee Structure and manufacturing method for single-wavelength and multi-wavelength distributed feedback lasers
EP2113973A1 (en) * 2008-04-29 2009-11-04 Alcatel Lucent Laser source and method for generating millimeter wave
CN102891433A (en) * 2012-09-27 2013-01-23 中国科学院半导体研究所 Method for manufacturing tunable laser and optical amplifier monolithic integrated device
US20130084070A1 (en) * 2011-09-29 2013-04-04 Applied Optoelectronics, Inc. Optical transceiver including optical fiber coupling assembly to increase usable channel wavelengths
CN103811994A (en) * 2012-11-07 2014-05-21 无锡华御信息技术有限公司 Working point variable semiconductor laser
CN103956652A (en) * 2014-04-25 2014-07-30 南京威宁锐克信息技术有限公司 Low-cost tunable DFB semiconductor laser device of integrated modulator and manufacturing method

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5536085A (en) * 1995-03-30 1996-07-16 Northern Telecom Limited Multi-wavelength gain-coupled distributed feedback laser array with fine tunability
US8457165B2 (en) * 2010-05-26 2013-06-04 Google Inc. Tunable multi-wavelength semiconductor laser array for optical communications based on wavelength division multiplexing
US10020636B2 (en) * 2013-06-13 2018-07-10 Applied Optoelectronics, Inc. Tunable laser with multiple in-line sections including sampled gratings

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5413884A (en) * 1992-12-14 1995-05-09 American Telephone And Telegraph Company Grating fabrication using electron beam lithography
US20030169785A1 (en) * 2002-03-11 2003-09-11 Jong-Ryeol Kim Wavelength-tunable laser apparatus
US20050031009A1 (en) * 2003-08-07 2005-02-10 San-Liang Lee Structure and manufacturing method for single-wavelength and multi-wavelength distributed feedback lasers
EP2113973A1 (en) * 2008-04-29 2009-11-04 Alcatel Lucent Laser source and method for generating millimeter wave
US20130084070A1 (en) * 2011-09-29 2013-04-04 Applied Optoelectronics, Inc. Optical transceiver including optical fiber coupling assembly to increase usable channel wavelengths
CN102891433A (en) * 2012-09-27 2013-01-23 中国科学院半导体研究所 Method for manufacturing tunable laser and optical amplifier monolithic integrated device
CN103811994A (en) * 2012-11-07 2014-05-21 无锡华御信息技术有限公司 Working point variable semiconductor laser
CN103956652A (en) * 2014-04-25 2014-07-30 南京威宁锐克信息技术有限公司 Low-cost tunable DFB semiconductor laser device of integrated modulator and manufacturing method

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
LIANYAN LI ET AL: "Experimental demonstration of a low-cost tunable semiconductor DFB laser for access networks", 《SEMICONDUCTOR SCIENCE AND TECHNOLOGY》 *

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106099639A (en) * 2016-08-26 2016-11-09 武汉光迅科技股份有限公司 A kind of multi-wavelength array laser and manufacture method thereof and using method
CN110299589A (en) * 2019-06-04 2019-10-01 中国人民解放军陆军工程大学 It is a kind of to divide and times frequency generating method and device
CN110299589B (en) * 2019-06-04 2021-11-09 中国人民解放军陆军工程大学 Frequency division and frequency multiplication generation method and device
CN111799649A (en) * 2020-06-12 2020-10-20 芯思杰技术(深圳)股份有限公司 Method and device for controlling wavelength of photodiode
WO2021249541A1 (en) * 2020-06-12 2021-12-16 芯思杰技术(深圳)股份有限公司 Photodiode and chip thereof, chip manufacturing method, and wavelength control method and apparatus

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