CN103811994A - Working point variable semiconductor laser - Google Patents
Working point variable semiconductor laser Download PDFInfo
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- CN103811994A CN103811994A CN201210441725.5A CN201210441725A CN103811994A CN 103811994 A CN103811994 A CN 103811994A CN 201210441725 A CN201210441725 A CN 201210441725A CN 103811994 A CN103811994 A CN 103811994A
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Abstract
The invention provides a working point variable semiconductor laser which comprises a sampled grating distributed reflector, a phase shifter, a gain region, a distributed feedback laser and a semiconductor optical amplifier which are sequentially connected. The working point variable semiconductor laser also comprises a temperature control device, and the above sampled grating distributed reflector, the phase shifter, the gain region, the distributed feedback laser and the semiconductor optical amplifier are arranged above the temperature control device to carry out temperature controlling. The working point variable semiconductor laser also comprises an output light detector used for detecting the light output characteristics of a light emitting device, a wavelength detector used for detecting the working wavelength of the output light of the light emitting device, a controller which controls the sampled grating distributed reflector, the phase shifter, the gain region, the distributed feedback laser and the semiconductor optical amplifier according to the detection structures of the output light detector and the wavelength detector such that the light emitting device outputs a desired working point.
Description
Technical field
The invention belongs to areas of information technology, especially interconnected, the internet of things information technology of information, is specifically related to the variable semiconductor laser in a kind of working point.
Background technology
Internet of Things is the important component part of generation information technology.Its English name is " The Internet of things ".Thus, as its name suggests, " Internet of Things is exactly the connected the Internet of thing thing ".This has the two-layer meaning: the first, and core and the basis of Internet of Things remain the Internet, are extension on Internet basic and the network of expansion; The second, its user side extends and has expanded between any article and article, carries out information exchange and communicates by letter.Therefore, the definition of Internet of Things is by information sensing equipment such as radio-frequency (RF) identification (RFID), infrared inductor, global positioning system, laser scanners, by the agreement of agreement, any article are connected with the Internet, carry out information exchange and communicate by letter, to realize a kind of network of intellectuality identification, location, tracking, monitoring and management to article.
In Internet of Things, need to there is superpower information network and sophisticated sensor supports.Semiconductor laser, it has advantages of, and volume is little, lightweight, running is reliable, little power consumption, efficiency are high, and particularly it can adopt the mode of electric excitation to produce laser, just can be realized and in output beam, be carried out information loading by direct modulation drive current.Therefore, it,, as basic information component, plays an important role in Internet of Things.
Semiconductor laser is the laser as operation material with semi-conducting material, and due to the difference in the structure of matter, the lasing detailed process of variety classes is more special.Conventional operation material has GaAs (GaAs), cadmium sulfide (CdS), indium phosphide (InP), zinc sulphide (ZnS) etc.Energisation mode has electric injection, electron beam excitation and three kinds of forms of optical pumping.Semiconductor laser device, can be divided into homojunction, single heterojunction, double heterojunction etc. several.When homojunction laser and single heterojunction laser room temperature, mostly be pulse device, and can realize continuous operation when double heterojunction laser room temperature.
It is known in prior art, can selecting the tunable laser of desired working point.For example, tunable laser has two or more wavelength selection portion, and these wavelength selection portions are for example the gain regions that has the reflector of periodicity reflectance spectrum or have periodic gain spectrum.In the time of relativeness between control cycle peak value, tunable laser is selected desired wavelength.
Carry out test example as the oscillatory regime of oscillation wavelength or spectrum and so on by using the instrument of for example wavemeter or spectroanalysis instrument; The optimal working point according to each passage detected, set the wavelength of for example look-up table and so on and select information; And select information and try to achieve the design temperature of temperature control equipment (TEC) and the setting electric current of reflector based on this wavelength, to detect the relativeness between each periodic peaks.
Tunable laser is tried to achieve oscillation wavelength desired in the time starting and when wavelength switches by using from the value of look-up table.For example, wavelength test section detects the output wavelength of tunable laser.
If the value detecting is different from the set point of look-up table, tunable laser regulates the temperature of TEC, and the peak value of gain spectra to gain regions is proofreaied and correct.Generally this feedback loop is called to wavelength locker.This operation can make output wavelength constant.
Japanese Patent Application Publication No.2004-47638 (being after this called document 1) discloses a kind of method by means of wavelength detecting or the jump of oscillation mode detector detecting pattern, as the method addressing this problem.In document 1, wavelength detecting test example is as the oscillatory regime of oscillation wavelength or spectrum.Wavelength detecting is provided with the etalon (etalon) with periodic peaks.Increase and reduce the parameter for control cycle peak relation, and utilizing wavelength detecting border A1 and border A2 near the large offset point of wavelength, to be detected.Mean value between border A1 and border A2 is set as to optimal working point " a ", and skew initial value.In this case, both made the initial temperature of temperature control equipment or the drive current of tunable laser accurately not offer tunable laser, also the position relationship of control cycle peak value optimally.Therefore, can reduce the possibility with another oscillation wavelength.
But, there is following situation, that is, due to the wavelength interval that wavelength jumps, wavelength detecting utilizes the disclosed method of document 1 large wavelength shift can not be detected.For example, in the time that wavelength mode was jumped according to the cycle identical with the cycle of wavelength detecting, near large wavelength shift, testing result may be identical.In this case, be difficult to detection boundaries A1 and border A2.In document 1, in order to address this problem, multiple etalons with different wavelength range are combined.In this case, because number of components increases and installation time prolongation, may increase cost, and be difficult to reduce size, light beam output quality is also poor.
Summary of the invention
Make the present invention in view of above situation, and the invention provides a kind of working point variable laser device method of testing, working point variable laser device control method and laser aid, it has avoided number of components to increase and installation time extends and detection optimal working point.
The semiconductor laser that working point is variable, comprising: the sampling grating distributed reflector (SG-DBR), phase deviation device (PS), gain regions, distributed feedback laser (SG-DFB) and the semiconductor optical amplifier (SOA) that sequentially connect;
Temperature control equipment, above-mentioned sampling grating distributed reflector (SG-DBR), phase deviation device (PS), gain regions, distributed feedback laser (SG-DFB) and semiconductor optical amplifier (SOA) are arranged on the top of temperature control equipment, to carry out temperature control;
Output photodetector, for detection of the light output characteristic of described light emitting devices;
Wavelength detecting, for detection of the operation wavelength of output light that detects described light emitting devices;
Controller, its detection architecture according to described output photodetector and wavelength detecting is controlled described sampling grating distributed reflector (SG-DBR), phase deviation device (PS), gain regions, distributed feedback laser (SG-DFB) and semiconductor optical amplifier (SOA), with the working point that described light emitting devices output is expected.
The working point of described expectation is the laser of the wavelength of described laser output expectation.
The length of supposing described sampling grating distributed reflector (SG-DBR), phase deviation device (PS), gain regions, distributed feedback laser (SG-DFB) and semiconductor optical amplifier (SOA) is respectively d1, d2, d3, d4 and d5,, set d2 and d5 and be all greater than d1, d3, d4, simultaneously, d2 and d5 are all not more than d1, d3, any both sums in d4.
Described controller has the control part of CPU (CPU), random asccess memory (RAM), read-only memory (ROM) and so on.
Accompanying drawing explanation
When read in conjunction with the accompanying drawings, according to following detailed description, other objects of the present invention, feature and advantage will become clearer, in the accompanying drawings:
Fig. 1 is exemplified with the schematic diagram of the variable semiconductor laser in working point of the present invention;
Embodiment
Now with reference to accompanying drawing, embodiments of the present invention are described.
Fig. 1 is exemplified with working point variable laser device 10a and have the schematic diagram of laser aid 100a of working point variable laser device 10a.As shown in Figure 1, laser aid 100a has working point variable laser device 10a, temperature control equipment 20, output detector 30, wavelength detecting 40 and controller 50.Working point variable laser device 10a is positioned on temperature control equipment 20, is arranged on temperature control equipment 20 for the thermistor of the temperature of measuring temperature control equipment 20.
Each parts will be described in detail belows.
As shown in Figure 1, working point variable laser device 10a has following structure, is sequentially connected with SG-DBR (sampling grating distributed Bragg reflector) region 21, PS (phase deviation) region 22, gain regions 23,24HeSOA region, SG-DBR region 13 in this structure.
SG-DBR region 21 and 24 has fiber waveguide, and fiber waveguide has multiple segmentations, is provided with and has the first area of diffraction grating and be connected to first area and serve as the second area of distance piece in these segmentations.Fiber waveguide is made up of semiconductor crystal, and this semiconductor crystal has the ABSORPTION EDGE wavelength of short wavelength side compared with laser oscillation wavelength.In SG-DBR region 21 and 24, each second area has mutually the same length.Heater 25 is arranged on SG-DBR region 21.Heater 28 is arranged on SG-DBR region 24.Utilize the temperature control of heater 25 to control the equivalent refractive index of the fiber waveguide in SG-DBR region 21.Utilize the temperature control of heater 28 to control the equivalent refractive index of the fiber waveguide in SG-DBR region 24.
The cycle of the wavelength peak in SG-DBR region 21 is different from the cycle of the wavelength peak in SG-DBR region 24.Wavelength selection portion is served as in SG-DBR region 21 and 24.Because longitudinal mode can be controlled by phase adjusted in PS region 22, therefore wavelength selection portion is served as in PS region 22.When SG-DBR region 21 and 24 and the wavelength characteristic in PS region 22 while changing, select oscillation wavelength.Can utilize at least one in combination and the temperature control equipment 20 of heater 25 and 28 to control the wavelength characteristic in SG-DBR region 21 and 24.
Suppose SG-DBR (sampling grating distributed Bragg reflector) region 21, PS (phase deviation) region 22, gain regions 23, the length in 24HeSOA region, SG-DBR region 13 is respectively d1, d2, d3, d4 and d5, , preferably d2 and d5 are all greater than d1, d3, d4, this is conducive to improve the reflection efficiency of described reflector, make laser be easy to starting of oscillation, thereby raising luminous efficiency, simultaneously, d2 and d5 all should not be greater than d1, d3, any both sums in d4, if be greater than above-mentioned both sums, out of proportion due between each several part, the photostability variation of output.
Can be by means of working point variable laser device 10a, by SG-DBR region 21 and 24 and PS region 22 at least one wavelength characteristic when regulating and starting by detection or the discontinuity that when wavelength switches, the gain-state of working point variable laser device 10a changes obtain the Optimal Temperature of heater 25 and 28 or the optimal current in PS region 22.Output detector 30 comprises beam splitter 31 and photodiode 32.Beam splitter 31 is arranged so that laser is reflected by the part in SOA region 13 and the laser of reflection is offered to photodiode 32.Wavelength detecting 40 has beam splitter 41, etalon 42 and photodiode 43 and 44.Beam splitter 41 is arranged to be reflected from a part for the laser of CSG-DBR region 11 side outputs, the laser of reflection is offered to photodiode 43, and the remainder of laser passes beam splitter 41 and offers photodiode 44.Etalon 42 is arranged between beam splitter 41 and photodiode 44.
In Fig. 1, wavelength detecting 40 is arranged on CSG-DBR region 11 sides, and output detector 30 is arranged on SOA region 13 sides.This structure is not limited to above structure.For example, each detector can be set in reverse order.
Concrete control adjustment mode is as follows:
First step, controls described adjustable wavelength laser to vibrate under setted wavelength according to initial set value, and wherein, controller utilizes photodiode measure laser intensity and the value recording is stored as to M0;
Second step, utilize a step value to regulate the wavelength characteristic of described wavelength selection portion, and detect described adjustable wavelength laser gain-state change discontinuity point, wherein, a described step value that step value is the mean temperature based on heater, and wherein, described controller utilizes described photodiode measure laser intensity and the value recording is stored as to M1, then, if | M1-M0| is greater than threshold value Th0, this controller determines whether this step value is more than or equal to threshold value Th1, if a described step value is equal to or greater than threshold value Th1, increase for this controller the situation that offers the electric power of described heater and the mean temperature of described heater is increased to described step value, mean temperature is reduced described step value by this controller, then utilize another step value that is less than a described step value to regulate the wavelength characteristic of described wavelength selection portion, and detect described adjustable wavelength laser gain-state change discontinuity point, the situation that reduces to offer the electric power of described heater and the mean temperature of described heater is reduced to described step value for this controller, mean temperature is increased described step value by this controller, then utilize another step value that is less than a described step value to regulate the wavelength characteristic of described wavelength selection portion, and detect the discontinuity point of the gain-state variation of described adjustable wavelength laser,
Third step, tries to achieve the stable operating point of described wavelength selection portion according to the limit point of the oscillatory regime under described setted wavelength, described limit point is point when described discontinuity point detected; And
The 4th step, controls described stable operating point place as the desired value vibration of described adjustable wavelength laser to try to achieve in described third step.
Applicant's statement, the present invention illustrates detailed construction of the present invention and technical parameter by above-described embodiment, but the present invention is not limited to above-mentioned detailed construction and technical parameter, do not mean that the present invention must rely on above-mentioned detailed construction and technical parameter could be implemented.Person of ordinary skill in the field should understand, any improvement in the present invention, and the selections of the equivalence replacement to the each parts of product of the present invention and the interpolation of accessory, concrete mode etc., within all dropping on protection scope of the present invention and open scope.
Claims (4)
1. the variable semiconductor laser in working point, comprising: the sampling grating distributed reflector (SG-DBR), phase deviation device (PS), gain regions, distributed feedback laser (SG-DFB) and the semiconductor optical amplifier (SOA) that sequentially connect;
Temperature control equipment, above-mentioned sampling grating distributed reflector (SG-DBR), phase deviation device (PS), gain regions, distributed feedback laser (SG-DFB) and semiconductor optical amplifier (SOA) are arranged on the top of temperature control equipment, to carry out temperature control;
Output photodetector, for detection of the light output characteristic of described light emitting devices;
Wavelength detecting, for detection of the operation wavelength of output light that detects described light emitting devices;
Controller, its detection architecture according to described output photodetector and wavelength detecting is controlled described sampling grating distributed reflector (SG-DBR), phase deviation device (PS), gain regions, distributed feedback laser (SG-DFB) and semiconductor optical amplifier (SOA), with the working point that described light emitting devices output is expected.
2. laser as claimed in claim 1, the working point of described expectation is the laser of the wavelength of described laser output expectation.
3. laser as claimed in claim 1, supposes that the length of described sampling grating distributed reflector (SG-DBR), phase deviation device (PS), gain regions, distributed feedback laser (SG-DFB) and semiconductor optical amplifier (SOA) is respectively d1, d2, d3, d4 and d5,, set d2 and d5 and be all greater than d1, d3, d4, meanwhile, d2 and d5 are all not more than d1, d3, any both sums in d4.
4. laser as claimed in claim 1, described controller has the control part of CPU (CPU), random asccess memory (RAM), read-only memory (ROM) and so on.
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| CN201210441725.5A CN103811994A (en) | 2012-11-07 | 2012-11-07 | Working point variable semiconductor laser |
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| CN201210441725.5A CN103811994A (en) | 2012-11-07 | 2012-11-07 | Working point variable semiconductor laser |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2016000183A1 (en) * | 2014-06-30 | 2016-01-07 | 华为技术有限公司 | Laser wavelength alignment method and device, onu, olt and pon system |
| JP2017147249A (en) * | 2016-02-15 | 2017-08-24 | 古河電気工業株式会社 | Wavelength variable type laser module and wavelength control method for the same |
| CN107210584A (en) * | 2014-11-24 | 2017-09-26 | 祥茂光电科技股份有限公司 | Tunable laser with multiple list type sections including sampling grating |
| CN109802298A (en) * | 2016-10-21 | 2019-05-24 | 北京信息科技大学 | Butterfly encapsulates SG-DBR semiconductor laser with tunable module control system |
-
2012
- 2012-11-07 CN CN201210441725.5A patent/CN103811994A/en active Pending
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2016000183A1 (en) * | 2014-06-30 | 2016-01-07 | 华为技术有限公司 | Laser wavelength alignment method and device, onu, olt and pon system |
| CN105409073A (en) * | 2014-06-30 | 2016-03-16 | 华为技术有限公司 | Laser wavelength alignment method and device, onu, olt and pon system |
| CN105409073B (en) * | 2014-06-30 | 2018-09-21 | 华为技术有限公司 | The wavelength alignment methods and device of laser, ONU, OLT and PON system |
| CN107210584A (en) * | 2014-11-24 | 2017-09-26 | 祥茂光电科技股份有限公司 | Tunable laser with multiple list type sections including sampling grating |
| JP2017147249A (en) * | 2016-02-15 | 2017-08-24 | 古河電気工業株式会社 | Wavelength variable type laser module and wavelength control method for the same |
| JP7019283B2 (en) | 2016-02-15 | 2022-02-15 | 古河電気工業株式会社 | Tunable laser module and its wavelength control method |
| CN109802298A (en) * | 2016-10-21 | 2019-05-24 | 北京信息科技大学 | Butterfly encapsulates SG-DBR semiconductor laser with tunable module control system |
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Application publication date: 20140521 |