CN108598845B - A kind of chirp microwave pulse production method and device - Google Patents
A kind of chirp microwave pulse production method and device Download PDFInfo
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- CN108598845B CN108598845B CN201810224136.9A CN201810224136A CN108598845B CN 108598845 B CN108598845 B CN 108598845B CN 201810224136 A CN201810224136 A CN 201810224136A CN 108598845 B CN108598845 B CN 108598845B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S1/00—Masers, i.e. devices using stimulated emission of electromagnetic radiation in the microwave range
- H01S1/02—Masers, i.e. devices using stimulated emission of electromagnetic radiation in the microwave range solid
Abstract
This application discloses a kind of chirp microwave pulse production method and device, described device includes front end laser, rear end laser, phase region, single mode optical fiber, photoelectric converter, radio-frequency cable；Front end laser, phase region, rear end laser successively integrate on the same chip；Front end laser, rear end laser are the Distributed Feedback Lasers made of reconstruction-equivalent chirp technology；The driving signal of the front end laser or the rear end laser is periodic serrations wave electric signal or class sawtooth wave electric signal.The method includes adjusting the bias current of the front end laser and rear end laser, change the wavelength interval between the front end laser and the rear end laser；The intensity for changing the sawtooth wave or the class sawtooth wave makes off-resonance frequency between the front end laser and the rear end laser periodically increasing or decreasing.Present invention control precision is high, compact-sized, performance is stable, at low cost.
Description
Technical field
This application involves optoelectronic areas more particularly to a kind of microwave pulse production methods based on Monolithic Integrated Laser
And device.
Background technique
Modern microwave radar system needs the chirp microwave pulse of big time-bandwidth product to improve detection range and detection point
Resolution.Since circuit engineering limits, chirp microwave pulse caused by traditional electrical domain method usually has that frequency is lower and bandwidth
The disadvantages of relatively narrow (lower than number GHz)；The chirp microwave pulse of high time-bandwidth product is optically generated, especially, is based on dividing
Principal and subordinate's laser of device is found to generate chirp microwave pulse, system complex, size are big, coupling loss is big；If with monolithic collection
It is realized at laser, two lasers are integrated on the same chip, share same waveguide, same temperature controller, then can not
It is controlled by temperature and realizes that two-laser wavelength is detuning.
For with making single chip integrated two laser stabilizations single mode operation, and wavelength can accurately be controlled, this is right
More stringent requirements are proposed for the manufacturing process of grating inside laser.Above-mentioned want is unable to satisfy using common holographic exposure technique
It asks；Although electron beam lithography can satisfy required precision, but equipment price is expensive, it is slow to inscribe speed, manufacturing process consumption
Shi Duo, batch production difficulty are big.
Summary of the invention
The embodiment of the present application provides a kind of chirp microwave pulse production method and device, it is intended to solve that manufacture is complicated, cost
High, precision and the low problem of integrated level.
A kind of chirp microwave pulse generator that the embodiment of the present application proposes, including front end laser, rear end laser, phase
Position area, single mode optical fiber, photoelectric converter, radio-frequency cable.The front end laser, phase region, rear end laser are successively integrated in
It is the first electricity isolated region, the phase region and the rear end between the front end laser and the phase region on same chip
It is the second electricity isolated region between laser；The front end laser is different with the operation wavelength of the rear end laser；Before described
Holding the driving signal of laser or the rear end laser is periodic serrations wave electric signal or class sawtooth wave electric signal；After described
It holds the output light of laser to draw by the single mode optical fiber, is converted to microwave signal using the photoelectric converter, uses institute
State radio-frequency cable output.Preferably, wavelength interval < 0.5nm of the front end laser and the rear end laser.
Preferably, in the chirp microwave pulse generator, the front end laser and the rear end laser are with weight
Distributed Feedback Laser made of structure-equivalent chirp technology.
Preferably, in the chirp microwave pulse generator, the front end laser, phase region, rear end laser are shared
Same ridge waveguide structure.
Preferably, in the chirp microwave pulse generator, the front end laser, phase region, rear end laser have
Identical material epitaxy structure；The material epitaxy structure includes n-type substrate, N-type buffer layer, ducting layer, strained multiple-quantum-well
Layer, grating material layer, p-type ducting layer, p-type limiting layer, p-type ohmic contact layer, insulating layer and positive and negative electrode；The phase region
Grid structure that grating material layer is unglazed.
Preferably, in the chirp microwave pulse generator, first electricity isolated region, the second electricity isolated region, front end are swashed
Light device, phase region, rear end laser share same ridge waveguide structure；First electricity isolated region and second electricity isolated region are
Optical grating construction is etched away using photoetching technique and ohmic contact layer is made.
Further, in chirp microwave pulse generator described in the application any one embodiment, the front end laser
Material used by device, phase region, rear end laser is III-V compound semiconductor material, II-VI group compound semiconductor
Material, group IV-VI compound semiconductor materials at least one of mix aluminum semiconductor material.
Further, in chirp microwave pulse generator described in the application any one embodiment, it is described first electricity every
From the length of area and second electricity isolated region in 30~80 μ ms.
The application also proposes a kind of chirp microwave pulse production method, for described in the applicant's any one embodiment
Device comprising the steps of:
The bias current for adjusting the front end laser and/or the rear end laser, change the front end laser and
Wavelength interval between the rear end laser makes described device work in monocycle oscillatory regime；
The intensity for changing the sawtooth wave or the class sawtooth wave makes the front end laser under monocycle oscillatory regime
Off-resonance frequency between device and the rear end laser periodically increasing or decreasing.
At least one above-mentioned technical solution that the embodiment of the present application uses can reach following the utility model has the advantages that chirp microwave arteries and veins
Rush generator structures are compact, performance stablize, wherein Monolithic Integrated Laser is realized with a low cost.Overcome traditional discrete device
The disadvantages of more, injected system volume is greatly, structure is complicated, stability is poor；Improve the control of two laser frequency off-resonance frequencies
Precision, the productibility for improving Monolithic Integrated Laser and yield rate reduce manufacture difficulty and manufacturing cost.
Detailed description of the invention
The drawings described herein are used to provide a further understanding of the present application, constitutes part of this application, this Shen
Illustrative embodiments and their description please are not constituted an undue limitation on the present application for explaining the application.In the accompanying drawings:
Fig. 1 is the chirp microwave pulse generator structures schematic diagram based on Monolithic Integrated Laser；
Fig. 2 is Monolithic Integrated Laser structural schematic diagram；
Fig. 3 is the equivalent grating principle of sampling grating；
Fig. 4 is the method control flow chart that chirp microwave pulse of the present invention generates；
The output of apparatus of the present invention when Fig. 5 is DC bias current difference, in which: (a) spectrum；(b) electricity that beat frequency obtains
Frequency spectrum；
Fig. 6 is sawtooth wave, class sawtooth wave electric signal waveform；
Fig. 7 is the chirp microwave pulse signal that beat frequency generates.
Specific embodiment
To keep the purposes, technical schemes and advantages of the application clearer, below in conjunction with the application specific embodiment and
Technical scheme is clearly and completely described in corresponding attached drawing.Obviously, described embodiment is only the application one
Section Example, instead of all the embodiments.Based on the embodiment in the application, those of ordinary skill in the art are not doing
Every other embodiment obtained under the premise of creative work out, shall fall in the protection scope of this application.
The laser made of conventional method, error reach ± 1.5nm.The monocycle is generated by Monolithic Integrated Laser
Oscillatory regime makes its beat frequency obtain the microwave pulse of chirp, it is necessary to guarantee relative wavelength between two integrated lasers
Accuracy controlling needs accurately semiconductor laser preparation method.
Below in conjunction with attached drawing, the technical scheme provided by various embodiments of the present application will be described in detail.
Fig. 1 is the chirp microwave pulse generator structures schematic diagram based on Monolithic Integrated Laser.The embodiment of the present application mentions
A kind of chirp microwave pulse generator out, including front end laser, rear end laser, phase region, single mode optical fiber, photoelectric conversion
Device, radio-frequency cable.The front end laser, phase region, rear end laser successively integrate on the same chip, the front end laser
It is the first electricity isolated region between device and the phase region, is the second electricity isolated region between the phase region and the rear end laser
(the first electricity isolated region, second point isolated area are not shown in Fig. 1)；The work of the front end laser and the rear end laser
Wavelength is different；The driving signal of the front end laser or the rear end laser is periodic serrations wave electric signal or class sawtooth
Wave electric signal；The output light of the rear end laser is drawn by the single mode optical fiber, is converted using the photoelectric converter
For microwave signal, exported with the radio-frequency cable.
Such as embodiment illustrated in fig. 1, include: the periodic class sawtooth wave electric signal 1 of outside injection, after single chip integrated
Hold laser 2, the phase region 3 between two lasers, single chip integrated front end laser 4, the periodic class of outside injection
Sawtooth wave electric signal 5, communication single mode optical fiber 6, wideband photodetectors 7, RF cable 8.It is single chip integrated in above-mentioned configuration
Front end laser, rear end laser, the phase region between two lasers constitute single chip integrated laser structure.
It should be noted that the front end is swashed in order to enable device of the present invention to work in monocycle oscillatory regime
Wavelength interval < 0.5nm of light device and the rear end laser." monocycle oscillatory regime " described in present specification refers to described
A kind of oscillatory regime that both front end laser and rear end laser enter when working together, it is micro- caused by the two beat frequency at this time
The line width of wave signal is relatively narrow.When generally, into monocycle oscillatory regime, the front end laser and the rear end laser
Wavelength interval is in 0.1nm magnitude or smaller.
Fig. 2 is Monolithic Integrated Laser structural schematic diagram.In the chirp microwave pulse generator, the front end laser
Device, phase region, rear end laser share same ridge waveguide structure.Preferably, in the chirp microwave pulse generator, before described
Hold laser, phase region, rear end laser material epitaxy structure having the same；The material epitaxy structure include n-type substrate,
N-type buffer layer, ducting layer, strained multiple-quantum-well layer, grating material layer, p-type ducting layer, p-type limiting layer, p-type ohmic contact layer,
Insulating layer and positive and negative electrode；The unglazed grid structure of grating material layer of the phase region.
Specifically, as shown in Fig. 2, the laser is integrated with two Distributed Feedback Lasers, i.e. rear end laser on the same chip
9 and front end laser 10, between, the phase region 11 comprising one section of unglazed grid structure.In order to guarantee rear end laser, phase
Position area, three sections of regions of front end laser can independent operation, in every design electricity isolated region 12,13 between the two.
Single-chip integration three-stage laser includes: n-type substrate 14 on material structure；N-shaped InP buffer layer 15；It is undoped
Lattice Matching InGaAsP ducting layer 16；Strain InGaAsP multiple quantum well layer 17；InGaAsP grating material layer 18；P-type lattice
With InGaAsP ducting layer 19；P-type InP limiting layer 20；P-type InGaAs ohmic contact layer 21；SiO2 insulating layer 22；Rear end laser
Device positive electrode 23-1；Front end laser positive electrode 23-2；Phase region positive electrode 23-3；Negative electrode 24.
As the embodiment that the application advanced optimizes, in the chirp microwave pulse generator, described first is electrically isolated
Area 13, the second electricity isolated region 12, front end laser 10, phase region 11, rear end laser 9 share same ridge waveguide structure；It is described
First electricity isolated region and second electricity isolated region are made of to etch away optical grating construction and ohmic contact layer using photoetching technique.
Further, in chirp microwave pulse generator described in the application any one embodiment, it is described first electricity every
From the length of area and second electricity isolated region in 30~80 μ ms.
It should be noted that in chirp microwave pulse generator described in the application any one embodiment, the front end
Material used by laser, phase region, rear end laser is III-V compound semiconductor material, II-VI group compound half
Conductor material, group IV-VI compound semiconductor materials at least one of mix aluminum semiconductor material.
Fig. 3 is the equivalent grating principle of sampling grating.Preferably, in the chirp microwave pulse generator, the front end
Laser and the rear end laser are the Distributed Feedback Lasers made of reconstruction-equivalent chirp technology.
To make the device of the invention work in monocycle oscillatory regime, the frequency between two lasers of accuracy controlling is needed
Off-resonance frequency size, however single chip integrated two lasers integrate on the same chip, two lasers share same waveguide,
The same temperature controller is shared, this means can not be adjusted by temperature to regulate and control wavelength off-resonance frequency, therefore single-chip integration
Under the conditions of, need two respective operation wavelengths of laser of careful design first.Reconstruct equivalent chirp technology is to utilize sampled light
The equivalent grating principles of grid realizes the accuracy controlling of laser excitation wavelength.The equivalent grating structural parameter of sampling grating with
The relationship of laser output wavelength is expressed as follows:
Wherein, λ±1It is the lasing wave of the corresponding bragg wavelength of the equivalent grating in sampling grating ± 1 grade and laser
It is long.NeffIt is the effective refractive index of laser, P is the sampling period of sampling grating, λ0=2NeffΛ0It is Prague of seed grating
Wavelength, Λ0It is uniform seed screen periods.In seed grating period A0In the case where determination, change the sampling week of sampling grating
Phase P is the outgoing wavelength X of changeable laser±1.Therefore the frequency detuning frequency of single chip integrated front-end and back-end laser,
It can accurately be guaranteed and accurately setting the sampling period of respective sampling grating.
Reconstruction-equivalent chirp technology has higher control precision to Distributed Feedback Laser wavelength, and wavelength control precision can at present
Up to ± 0.2nm, the wavelength accuracy requirement for generating two lasers of chirp microwave pulse is fully met.
Fig. 4 is the method control flow chart that chirp microwave pulse of the present invention generates.The application also proposes a kind of chirp microwave
Method for generating pulse is used for the applicant's any one embodiment institute described device comprising the steps of:
Step 101, the bias current for adjusting the front end laser and/or the rear end laser, change the front end
Wavelength interval (or off-resonance frequency) between laser and the rear end laser vibrates described device work in the monocycle
State；
It should be noted that the present invention come careful design and realizes Monolithic Integrated Laser using reconstruct equivalent chirp technology
Operation wavelength, in addition, also need in specific implementation carefully adjust two lasers bias current size, play further
The effect of finely regulating frequency detuning frequency.
It should also be noted that, bias current adjusts laser wavelength variation range in 0.1nm magnitude, with conventional method system
The laser of work, since laser wavelength error range is big, being affected of the wavelength interval stimulated light device wavelength error (±
3nm), the range that can be adjusted with bias current is had exceeded.
Step 102, the intensity for changing the sawtooth wave or the class sawtooth wave make described under monocycle oscillatory regime
Off-resonance frequency between front end laser and the rear end laser periodically increasing or decreasing.
As driving signal, the sawtooth wave or the class sawtooth wave can be loaded in main laser (such as front end laser
Device) on, it can also load at from laser (such as rear end laser).
The output of apparatus of the present invention when Fig. 5 DC bias current difference reflects the single-chip integration under monocycle oscillatory regime
The electric frequency spectrum that laser is obtained with (a) spectrum, (b) beat frequency of the variation of DC bias current.In addition to passing through reconstruct etc. in advance
It imitates except the frequency detuning frequency between two lasers of chirp technology careful design, by carefully adjusting two lasers
DC bias current size can play the effect of further finely regulating frequency detuning frequency.In an implementation of the invention
In example, single chip integrated front-end and back-end laser is in monocycle oscillatory regime, holds the direct current biasing of laser after fixation
In the case of electric current is 88mA, by adjusting the DC bias current size of front end laser, the frequency between two lasers is lost
Harmonics rate is also adjusted therewith, and the frequency for the microwave signal that corresponding beat frequency obtains also is changed.
Fig. 6 is sawtooth wave, class sawtooth wave electric signal waveform.In order on wideband photodetectors generate linear frequency modulation or
Chirped microwave signal needs for the electric signal of external drive to be designed as periodic sawtooth wave electric signal or class sawtooth wave
Electric signal, the Signal shock front end laser or rear end laser reach the power note changed between two lasers
Enter than and wavelength interval effect, due to it is this change be periodic increasing or decreasing, generated microwave signal
Frequency be also periodically be incremented by this frequency periodicity of perhaps successively decreasing be incremented by or the microwave signal successively decreased is exactly linear
Frequency modulation or chirped microwave pulse signal.
It should be noted that in this application: sawtooth wave is that rising edge is steep, failing edge is negative slope line, or rises
Along the periodic waveform steep for positive slope line, failing edge.Class sawtooth wave is that rising edge is steep, failing edge is curve, or rises
Along the periodic waveform steep for curve, failing edge.
Several possible sawtooth wave, the class sawtooth wave electric signal waveform enumerated in Fig. 6, wherein (a) sawtooth wave, rising edge
For positive slope line；Failing edge is steep；(b) class sawtooth wave, rising edge are curve, and first derivative is greater than 0, second dervative less than 0；
Failing edge is steep；(c) sawtooth wave, rising edge are steep；Failing edge is negative slope line；(b) class sawtooth wave, rising edge is steep, declines
Along being curve, first derivative is less than 0, second dervative greater than 0.
Fig. 7 is the chirp microwave pulse signal that beat frequency generates.Due to changing for two integrated laser frequency off-resonance frequencies
Change is periodic increasing or decreasing, therefore the frequency of generated microwave signal is also periodically on wideband photodetectors
Be incremented by this frequency periodicity of perhaps successively decreasing be incremented by or the microwave signal successively decreased is exactly linear frequency modulation or chirped
Microwave pulse signal, time domain waveform and real-time frequency are as shown in Figure 6, it can be seen that the real-time frequency inside microwave pulse is close
Like linear increment.Wherein, (a) time domain waveform；(b) real-time frequency curve.
The present invention provides a kind of chirp microwave pulse generators and its implementation compact-sized, performance is stable, and
And used Monolithic Integrated Laser is realized with a low cost.The present invention realizes that DFB swashs with Monolithic Integrated Laser mode
The monocycle of light device is vibrated, and the disadvantages of traditional discrete device is more, injected system volume is big, structure is complicated, stability is poor are overcome.
In an embodiment of the present invention, the grating that reconstruction-equivalent chirp technology introduces single-chip integration Distributed Feedback Laser is manufactured
In the process, two can accurately be controlled by controlling the sampling grating period of micron dimension using reconstruction-equivalent chirp technology
The wavelength difference of laser, improves the control precision of frequency detuning frequency, to improve the oscillation of Monolithic Integrated Laser monocycle
The productibility and yield rate of state reduce the manufacture difficulty and manufacturing cost of Monolithic Integrated Laser.
The DFB semiconductor laser of reconstruction-equivalent chirp (REC) complicated technology realization wave-guide grating structure.It is complete with a step
Breath exposure replaces the electron beam exposure of sub-nanometer magnitude with the contact exposure of the common sub-micrometer scale of a step, utilizes sub-micron
Class precision realizes the manufacture of nano-precision, to reduce the production time, lower production cost.Meanwhile reconstruction-equivalent chirp
The manufacturing process of technology and conventional photographic exposure technology are completely compatible, in manufacturing cost there is electron beam lithography can not compare
Quasi- advantage can satisfy requirement of the future communication systems to low cost.
It should also be noted that, the terms "include", "comprise" or its any other variant are intended to nonexcludability
It include so that the process, method, commodity or the equipment that include a series of elements not only include those elements, but also to wrap
Include other elements that are not explicitly listed, or further include for this process, method, commodity or equipment intrinsic want
Element.In the absence of more restrictions, the element limited by sentence "including a ...", it is not excluded that including described want
There is also other identical elements in the process, method of element, commodity or equipment.
The above description is only an example of the present application, is not intended to limit this application.For those skilled in the art
For, various changes and changes are possible in this application.All any modifications made within the spirit and principles of the present application are equal
Replacement, improvement etc., should be included within the scope of the claims of this application.
Claims (9)
1. a kind of chirp microwave pulse generator, including front end laser, rear end laser, phase region, single mode optical fiber, photoelectricity turn
Parallel operation, radio-frequency cable, which is characterized in that
The front end laser, phase region, rear end laser successively integrate on the same chip, the front end laser and described
It is the first electricity isolated region between phase region, is the second electricity isolated region between the phase region and the rear end laser；
The front end laser is different with the operation wavelength of the rear end laser；
The driving signal of the front end laser or the rear end laser is periodic serrations wave electric signal or class sawtooth wave electricity
Signal；
The output light of the rear end laser is drawn by the single mode optical fiber, is converted to microwave using the photoelectric converter
Signal is exported with the radio-frequency cable.
2. chirp microwave pulse generator as described in claim 1, which is characterized in that the front end laser and the rear end are swashed
Light device is the Distributed Feedback Laser made of reconstruction-equivalent chirp technology.
3. chirp microwave pulse generator as described in claim 1, which is characterized in that the front end laser, phase region, rear end
Laser shares same ridge waveguide structure.
4. chirp microwave pulse generator as described in claim 1, which is characterized in that
The front end laser, phase region, rear end laser material epitaxy structure having the same；
The material epitaxy structure includes n-type substrate, N-type buffer layer, ducting layer, strained multiple-quantum-well layer, grating material layer, p
Type ducting layer, p-type limiting layer, p-type ohmic contact layer, insulating layer and positive and negative electrode；
The unglazed grid structure of grating material layer of the phase region.
5. chirp microwave pulse generator as claimed in claim 3, which is characterized in that
First electricity isolated region, the second electricity isolated region, front end laser, phase region, rear end laser share same ridge waveguide
Structure；
First electricity isolated region and second electricity isolated region are to etch away optical grating construction and Ohmic contact using photoetching technique
Layer is made.
6. chirp microwave pulse generator as claimed in any one of claims 1 to 5, wherein, which is characterized in that
Material used by the front end laser, phase region, rear end laser is III-V compound semiconductor material, II-
VI group iii v compound semiconductor material, group IV-VI compound semiconductor materials at least one of mix aluminum semiconductor material.
7. chirp microwave pulse generator as claimed in any one of claims 1 to 5, wherein, it is characterised in that
The length of first electricity isolated region and second electricity isolated region is in 30~80 μ ms.
8. chirp microwave pulse generator as claimed in any one of claims 1 to 5, wherein, it is characterised in that
Wavelength interval < 0.5nm of the front end laser and the rear end laser.
9. a kind of chirp microwave pulse production method is generated for chirp microwave pulse described in claim 1~8 any one
Device, which is characterized in that comprise the steps of:
The bias current for adjusting the front end laser and/or the rear end laser changes the front end laser and described
Wavelength interval between the laser of rear end makes the chirp microwave pulse generators duty in monocycle oscillatory regime；
The intensity for changing the sawtooth wave or the class sawtooth wave, under monocycle oscillatory regime, make the front end laser and
Off-resonance frequency between the rear end laser periodically increasing or decreasing.
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| CN111490438B (en) * | 2019-01-25 | 2021-05-07 | 中国人民解放军陆军工程大学 | Tunable microwave signal generation system and method |
| CN110299589B (en) * | 2019-06-04 | 2021-11-09 | 中国人民解放军陆军工程大学 | Frequency division and frequency multiplication generation method and device |
| CN110444995A (en) * | 2019-07-10 | 2019-11-12 | 太原理工大学 | A kind of integreted phontonics tunable photo microwave chip |
| CN110737089B (en) * | 2019-09-09 | 2021-08-20 | 华南师范大学 | Method and system for generating chirped airy vortex electronic plasma wave |
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| CN102882127B (en) * | 2012-09-19 | 2014-04-02 | 大连理工大学 | Photoinjection-type chaotic photonic integration device and preparation method thereof |
| CN104124611B (en) * | 2014-05-09 | 2017-08-25 | 南京大学 | Single-chip integration injection locking Distributed Feedback Laser and array and its manufacture method based on reconstruct equivalent chirp |
| CN104377544B (en) * | 2014-11-28 | 2017-11-21 | 中国科学院半导体研究所 | The straight Monolithic Integrated Laser chip for adjusting bandwidth expansion is realized based on amplification feedback |
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