CN108598845A - Chirp microwave pulse generation method and device - Google Patents
Chirp microwave pulse generation method and device Download PDFInfo
- Publication number
- CN108598845A CN108598845A CN201810224136.9A CN201810224136A CN108598845A CN 108598845 A CN108598845 A CN 108598845A CN 201810224136 A CN201810224136 A CN 201810224136A CN 108598845 A CN108598845 A CN 108598845A
- Authority
- CN
- China
- Prior art keywords
- end laser
- laser
- rear end
- microwave pulse
- chirp
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 title claims abstract description 17
- 238000005516 engineering process Methods 0.000 claims abstract description 14
- 230000000737 periodic effect Effects 0.000 claims abstract description 11
- 230000003247 decreasing effect Effects 0.000 claims abstract description 10
- 239000000463 material Substances 0.000 claims description 29
- 230000005611 electricity Effects 0.000 claims description 27
- 238000004519 manufacturing process Methods 0.000 claims description 17
- 230000003534 oscillatory effect Effects 0.000 claims description 13
- 239000004065 semiconductor Substances 0.000 claims description 13
- 150000001875 compounds Chemical class 0.000 claims description 9
- 239000013307 optical fiber Substances 0.000 claims description 7
- 238000000407 epitaxy Methods 0.000 claims description 6
- 239000000758 substrate Substances 0.000 claims description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- 238000010276 construction Methods 0.000 claims description 3
- 230000003287 optical effect Effects 0.000 claims description 3
- 238000001259 photo etching Methods 0.000 claims description 3
- 230000005622 photoelectricity Effects 0.000 claims 1
- 230000008901 benefit Effects 0.000 abstract description 3
- 239000000835 fiber Substances 0.000 abstract 1
- 238000005070 sampling Methods 0.000 description 11
- 230000035559 beat frequency Effects 0.000 description 7
- 230000000630 rising effect Effects 0.000 description 6
- 230000008859 change Effects 0.000 description 5
- 230000001276 controlling effect Effects 0.000 description 4
- 238000013461 design Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 230000010354 integration Effects 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- 238000001228 spectrum Methods 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000004891 communication Methods 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 238000000609 electron-beam lithography Methods 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 230000005693 optoelectronics Effects 0.000 description 2
- 230000010355 oscillation Effects 0.000 description 2
- 230000001105 regulatory effect Effects 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 1
- 210000001367 artery Anatomy 0.000 description 1
- 238000010923 batch production Methods 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 238000007687 exposure technique Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
- 210000003462 vein Anatomy 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S1/00—Masers, i.e. devices using stimulated emission of electromagnetic radiation in the microwave range
- H01S1/02—Masers, i.e. devices using stimulated emission of electromagnetic radiation in the microwave range solid
Landscapes
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
Abstract
The application discloses a chirp microwave pulse generation method and a device, wherein the device comprises a front-end laser, a rear-end laser, a phase area, a single-mode fiber, a photoelectric converter and a radio-frequency cable; the front-end laser, the phase area and the rear-end laser are sequentially integrated on the same chip; the front-end laser and the rear-end laser are DFB lasers manufactured by using a reconstruction-equivalent chirp technology; the driving signal of the front-end laser or the rear-end laser is a periodic sawtooth wave electric signal or a sawtooth wave-like electric signal. The method comprises the steps of adjusting bias currents of the front-end laser and the back-end laser, and changing the wavelength interval between the front-end laser and the back-end laser; and changing the intensity of the sawtooth wave or the sawtooth-like wave to enable the detuning frequency between the front-end laser and the back-end laser to be increased or decreased periodically. The invention has the advantages of high control precision, compact structure, stable performance and low cost.
Description
Technical field
This application involves optoelectronic areas more particularly to a kind of microwave pulse production methods based on Monolithic Integrated Laser
And device.
Background technology
Modern microwave radar system needs the chirp microwave pulse of big time-bandwidth product to improve detection range and detection point
Resolution.Since circuit engineering limits, chirp microwave pulse caused by traditional electrical domain method usually has that frequency is relatively low and bandwidth
The shortcomings of relatively narrow (less than number GHz)；The chirp microwave pulse of high time-bandwidth product is optically generated, especially, is based on dividing
Principal and subordinate's laser of device is found to generate chirp microwave pulse, system complex, size are big, coupling loss is big；If with monolithic collection
It is realized at laser, two lasers are integrated on the same chip, share same waveguide, same temperature controller, then can not
It is controlled by temperature and realizes that two-laser wavelength is detuning.
For with making single chip integrated two laser stabilizations single mode operation, and wavelength can be accurately controlled, this is right
More stringent requirements are proposed for the manufacturing process of grating inside laser.Above-mentioned want is cannot be satisfied using common holographic exposure technique
It asks；Although electron beam lithography disclosure satisfy that required precision, but equipment price is expensive, it is slow to inscribe speed, manufacturing process consumption
Shi Duo, batch production difficulty are big.
Invention content
A kind of chirp microwave pulse production method of the embodiment of the present application offer and device, it is intended to solve manufacture complexity, cost
High, precision and the low problem of integrated level.
A kind of chirp microwave pulse generator that the embodiment of the present application proposes, including front end laser, rear end laser, phase
Position area, single mode optical fiber, photoelectric converter, radio-frequency cable.The front end laser, phase region, rear end laser are integrated in successively
It is the first electricity isolated region, the phase region and the rear end on same chip, between the front end laser and the phase region
It is the second electricity isolated region between laser；The front end laser is different with the operation wavelength of the rear end laser；Before described
It is periodic serrations wave electric signal or class sawtooth wave electric signal to hold the drive signal of laser or the rear end laser；After described
It holds the output light of laser to be drawn by the single mode optical fiber, microwave signal is converted to using the photoelectric converter, it is used
The radio-frequency cable output.Preferably, the wavelength interval of the front end laser and the rear end laser<0.5nm.
Preferably, in the chirp microwave pulse generator, the front end laser and the rear end laser are with weight
Distributed Feedback Laser made of structure-equivalent chirp technology.
Preferably, in the chirp microwave pulse generator, the front end laser, phase region, rear end laser share
Same ridge waveguide structure.
Preferably, in the chirp microwave pulse generator, the front end laser, phase region, rear end laser have
Identical material epitaxy structure；The material epitaxy structure includes n-type substrate, N-type buffer layer, ducting layer, strained multiple-quantum-well
Layer, grating material layer, p-type ducting layer, p-type limiting layer, p-type ohmic contact layer, insulating layer and positive and negative electrode；The phase region
Grid structure that grating material layer is unglazed.
Preferably, in the chirp microwave pulse generator, first electricity isolated region, the second electricity isolated region, front end are swashed
Light device, phase region, rear end laser share same ridge waveguide structure；First electricity isolated region and second electricity isolated region are
Optical grating construction is etched away using photoetching technique and ohmic contact layer is made.
Further, in the chirp microwave pulse generator described in the application any one embodiment, the front end laser
Material used by device, phase region, rear end laser is III-V compound semiconductor material, II-VI group compound semiconductor
Material, group IV-VI compound semiconductor materials at least one of mix aluminum semiconductor material.
Further, in the chirp microwave pulse generator described in the application any one embodiment, it is described first electricity every
From the length of area and second electricity isolated region in 30~80 μ ms.
The application also proposes a kind of chirp microwave pulse production method, described in the applicant's any one embodiment
Device comprises the steps of：
The bias current for adjusting the front end laser and/or the rear end laser, change the front end laser and
Wavelength interval between the rear end laser, makes described device be operated in monocycle oscillatory regime；
The intensity for changing the sawtooth wave or the class sawtooth wave makes the front end laser under monocycle oscillatory regime
Off-resonance frequency between device and the rear end laser periodically increasing or decreasing.
Above-mentioned at least one technical solution that the embodiment of the present application uses can reach following advantageous effect：Chirp microwave arteries and veins
Rush that generator structures are compact, performance is stablized, wherein Monolithic Integrated Laser is realized with a low cost.Overcome traditional discrete device
More, the shortcomings of injected system volume is big, complicated, stability is poor；Improve the control of two laser frequency off-resonance frequencies
Precision, the productibility for improving Monolithic Integrated Laser and yield rate reduce manufacture difficulty and manufacturing cost.
Description of the drawings
Attached drawing described herein is used for providing further understanding of the present application, constitutes part of this application, this Shen
Illustrative embodiments and their description please do not constitute the improper restriction to the application for explaining the application.In the accompanying drawings：
Fig. 1 is the chirp microwave pulse generator structures schematic diagram based on Monolithic Integrated Laser；
Fig. 2 is Monolithic Integrated Laser structural schematic diagram；
Fig. 3 is the equivalent grating principle of sampling grating；
Fig. 4 is the method control flow chart that chirp microwave pulse of the present invention generates；
The output of apparatus of the present invention when Fig. 5 is DC bias current difference, wherein：(a) spectrum；(b) electricity that beat frequency obtains
Frequency spectrum；
Fig. 6 is sawtooth wave, class sawtooth wave electric signal waveform；
Fig. 7 is the chirp microwave pulse signal that beat frequency generates.
Specific implementation mode
To keep the purpose, technical scheme and advantage of the application clearer, below in conjunction with the application specific embodiment and
Technical scheme is clearly and completely described in corresponding attached drawing.Obviously, described embodiment is only the application one
Section Example, instead of all the embodiments.Based on the embodiment in the application, those of ordinary skill in the art are not doing
Go out the every other embodiment obtained under the premise of creative work, shall fall in the protection scope of this application.
The laser made of conventional method, error reach ± 1.5nm.The monocycle is generated by Monolithic Integrated Laser
Oscillatory regime makes its beat frequency obtain the microwave pulse of chirp, it is necessary to ensure relative wavelength between two integrated lasers
Accuracy controlling needs accurately semiconductor laser preparation method.
Below in conjunction with attached drawing, the technical solution that each embodiment of the application provides is described in detail.
Fig. 1 is the chirp microwave pulse generator structures schematic diagram based on Monolithic Integrated Laser.The embodiment of the present application carries
A kind of chirp microwave pulse generator gone out, including front end laser, rear end laser, phase region, single mode optical fiber, opto-electronic conversion
Device, radio-frequency cable.The front end laser, phase region, rear end laser integrate on the same chip successively, the front end laser
It is the first electricity isolated region between device and the phase region, is the second electricity isolated region between the phase region and the rear end laser
(the first electricity isolated region, second point isolated area are not shown in Fig. 1)；The work of the front end laser and the rear end laser
Wavelength is different；The drive signal of the front end laser or the rear end laser is periodic serrations wave electric signal or class sawtooth
Wave electric signal；The output light of the rear end laser is drawn by the single mode optical fiber, is converted using the photoelectric converter
For microwave signal, the used radio-frequency cable output.
Such as embodiment illustrated in fig. 1, including：The periodic class sawtooth wave electric signal 1 of outside injection, after single chip integrated
Hold laser 2, the phase region 3 between two lasers, single chip integrated front end laser 4, the periodic class of outside injection
Sawtooth wave electric signal 5, communication single mode optical fiber 6, wideband photodetectors 7, RF cable 8.It is single chip integrated in above-mentioned configuration
Phase region between front end laser, rear end laser, two lasers constitutes single chip integrated laser structure.
It should be noted that in order to enable device of the present invention to be operated in monocycle oscillatory regime, the front end is swashed
The wavelength interval of light device and the rear end laser<0.5nm." monocycle oscillatory regime " described in present specification refers to described
A kind of oscillatory regime that both front end laser and rear end laser enter when working together, it is micro- caused by the two beat frequency at this time
The line width of wave signal is relatively narrow.When usually, into monocycle oscillatory regime, the front end laser and the rear end laser
Wavelength interval is in 0.1nm magnitudes or smaller.
Fig. 2 is Monolithic Integrated Laser structural schematic diagram.In the chirp microwave pulse generator, the front end laser
Device, phase region, rear end laser share same ridge waveguide structure.Preferably, in the chirp microwave pulse generator, before described
Hold laser, phase region, rear end laser material epitaxy structure having the same；The material epitaxy structure include n-type substrate,
N-type buffer layer, ducting layer, strained multiple-quantum-well layer, grating material layer, p-type ducting layer, p-type limiting layer, p-type ohmic contact layer,
Insulating layer and positive and negative electrode；The unglazed grid structure of grating material layer of the phase region.
Specifically, as shown in Fig. 2, the laser is integrated with two Distributed Feedback Lasers, i.e. rear end laser on the same chip
9 and front end laser 10 include the phase region 11 of one section of unglazed grid structure between.In order to ensure rear end laser, phase
Position area, three sections of regions of front end laser can independent operation, in every design electricity isolated region 12,13 between the two.
Single-chip integration three-stage laser includes on material structure：N-type substrate 14；N-shaped InP buffer layers 15；It is undoped
Lattice Matching InGaAsP ducting layers 16；Strain InGaAsP multiple quantum well layers 17；InGaAsP grating materials layer 18；P-type lattice
With InGaAsP ducting layers 19；P-type InP limiting layers 20；P-type InGaAs ohmic contact layers 21；SiO2 insulating layers 22；Rear end laser
Device positive electrode 23-1；Front end laser positive electrode 23-2；Phase region positive electrode 23-3；Negative electrode 24.
As the embodiment that the application advanced optimizes, in the chirp microwave pulse generator, described first is electrically isolated
Area 13, the second electricity isolated region 12, front end laser 10, phase region 11, rear end laser 9 share same ridge waveguide structure；It is described
First electricity isolated region and second electricity isolated region are made of to etch away optical grating construction and ohmic contact layer using photoetching technique.
Further, in the chirp microwave pulse generator described in the application any one embodiment, it is described first electricity every
From the length of area and second electricity isolated region in 30~80 μ ms.
It should be noted that in chirp microwave pulse generator described in the application any one embodiment, the front end
Material used by laser, phase region, rear end laser is III-V compound semiconductor material, II-VI group compound half
Conductor material, group IV-VI compound semiconductor materials at least one of mix aluminum semiconductor material.
Fig. 3 is the equivalent grating principle of sampling grating.Preferably, in the chirp microwave pulse generator, the front end
Laser and the rear end laser are the Distributed Feedback Lasers made of reconstruction-equivalent chirp technology.
To make the device of the invention be operated in monocycle oscillatory regime, the frequency between two lasers of accuracy controlling is needed
Off-resonance frequency size, however single chip integrated two lasers integrate on the same chip, two lasers share same waveguide,
The same temperature controller is shared, this means can not be adjusted by temperature to regulate and control wavelength off-resonance frequency, therefore single-chip integration
Under the conditions of, need two respective operation wavelengths of laser of careful design first.Reconstruct equivalent chirp technology is to utilize sampled light
The equivalent grating principles of grid realizes the accuracy controlling of laser excitation wavelength.The equivalent grating structural parameter of sampling grating with
The relationship of laser output wavelength indicates as follows：
Wherein, λ±1It is the lasing wave of the corresponding bragg wavelength of the equivalent grating in sampling grating ± 1 grade and laser
It is long.NeffIt is the effective refractive index of laser, P is the sampling period of sampling grating, λ0=2NeffΛ0It is Prague of seed grating
Wavelength, Λ0It is uniform seed screen periods.In seed grating period A0In the case of determination, change the sampling week of sampling grating
Phase P is the outgoing wavelength X of changeable laser±1.Therefore the frequency detuning frequency of single chip integrated front-end and back-end laser,
Can accurately it be ensured by accurately setting the sampling period of respective sampling grating.
Reconstruction-equivalent chirp technology has higher control accuracy to Distributed Feedback Laser wavelength, and wavelength control precision can at present
Up to ± 0.2nm, the wavelength accuracy requirement for two lasers for generating chirp microwave pulse is fully met.
Fig. 4 is the method control flow chart that chirp microwave pulse of the present invention generates.The application also proposes a kind of chirp microwave
Method for generating pulse is used for the applicant's any one embodiment institute described device, comprises the steps of：
Step 101, the bias current for adjusting the front end laser and/or the rear end laser, change the front end
Wavelength interval (or off-resonance frequency) between laser and the rear end laser makes described device be operated in monocycle oscillation
State；
It should be noted that the present invention come careful design and realizes Monolithic Integrated Laser using reconstruct equivalent chirp technology
Operation wavelength, in addition, also need in specific implementation carefully adjust two lasers bias current size, play further
The effect of finely regulating frequency detuning frequency.
It should also be noted that, bias current adjusts laser wavelength variation range in 0.1nm magnitudes, with conventional method system
The laser of work, since laser wavelength error range is big, being affected of the wavelength interval stimulated light device wavelength error (±
3nm), the range that can be adjusted with bias current is had exceeded.
Step 102, the intensity for changing the sawtooth wave or the class sawtooth wave make described under monocycle oscillatory regime
Off-resonance frequency between front end laser and the rear end laser periodically increasing or decreasing.
As drive signal, the sawtooth wave or the class sawtooth wave can be loaded in main laser (such as front end laser
Device) on, it can also load at from laser (such as rear end laser).
The output of apparatus of the present invention when Fig. 5 DC bias current differences reflects the single-chip integration under monocycle oscillatory regime
The electric frequency spectrum that laser is obtained with (a) spectrum, (b) beat frequency of the variation of DC bias current.In addition to passing through reconstruct etc. in advance
It imitates except the frequency detuning frequency between chirp technology two lasers of careful design, by carefully adjusting two lasers
DC bias current size can play the effect of further finely regulating frequency detuning frequency.In the implementation of the present invention
In example, single chip integrated front-end and back-end laser is in monocycle oscillatory regime, holds the direct current biasing of laser after fixation
In the case of electric current is 88mA, by adjusting the DC bias current size of front end laser, the frequency between two lasers is lost
Harmonics rate is also adjusted therewith, and the frequency for the microwave signal that corresponding beat frequency obtains also is changed.
Fig. 6 is sawtooth wave, class sawtooth wave electric signal waveform.In order on wideband photodetectors generate linear frequency modulation or
Chirped microwave signal needs the electric signal of external drive being designed as periodic sawtooth wave electric signal or class sawtooth wave
Electric signal, the Signal shock front end laser or rear end laser reach the power note between changing two lasers
Enter than and wavelength interval effect, due to it is this change be periodic increasing or decreasing, generated microwave signal
Frequency be also periodically be incremented by this frequency cycle of either successively decreasing be incremented by or the microwave signal successively decreased is exactly linear
Frequency modulation or chirped microwave pulse signal.
It should be noted that in this application：Sawtooth wave is that rising edge is steep, failing edge is negative slope line, or rises
The periodic waveform that edge is positive slope line, failing edge is steep.Class sawtooth wave is that rising edge is steep, failing edge is curve, or rises
The periodic waveform that edge is curve, failing edge is steep.
Several possible sawtooth wave, the class sawtooth wave electric signal waveform enumerated in Fig. 6, wherein (a) sawtooth wave, rising edge
For positive slope line；Failing edge is steep；(b) class sawtooth wave, rising edge are curve, and first derivative is more than 0, second dervative and is less than 0；
Failing edge is steep；(c) sawtooth wave, rising edge are steep；Failing edge is negative slope line；(b) class sawtooth wave, rising edge is steep, declines
Along being curve, first derivative is less than 0, second dervative more than 0.
Fig. 7 is the chirp microwave pulse signal that beat frequency generates.Due to changing for two integrated laser frequency off-resonance frequencies
Change is periodic increasing or decreasing, therefore the frequency of generated microwave signal is also periodically on wideband photodetectors
Be incremented by this frequency cycle of either successively decreasing be incremented by or the microwave signal successively decreased is exactly linear frequency modulation or chirped
Microwave pulse signal, time domain waveform and real-time frequency are as shown in Figure 6, it can be seen that the real-time frequency inside microwave pulse is close
Like linear increment.Wherein, (a) time domain waveform；(b) real-time frequency curve.
The present invention provides a kind of chirp microwave pulse generator that compact-sized, performance is stablized and its implementation, and
And used Monolithic Integrated Laser is realized with a low cost.The present invention realizes that DFB swashs with Monolithic Integrated Laser mode
The monocycle of light device is vibrated, and the shortcomings of traditional discrete device is more, injected system volume is big, complicated, stability is poor are overcome.
In an embodiment of the present invention, the grating that reconstruction-equivalent chirp technology is introduced to single-chip integration Distributed Feedback Laser manufactures
In the process, two can be accurately controlled by controlling the sampling grating period of micron dimension using reconstruction-equivalent chirp technology
The wavelength difference of laser improves the control accuracy of frequency detuning frequency, to improve the oscillation of Monolithic Integrated Laser monocycle
The productibility and yield rate of state reduce the manufacture difficulty and manufacturing cost of Monolithic Integrated Laser.
The DFB semiconductor laser of reconstruction-equivalent chirp (REC) complicated technology realization wave-guide grating structure.It is complete with a step
Breath exposure replaces the electron beam exposure of sub-nanometer magnitude with the contact exposure of the common sub-micrometer scale of a step, utilizes sub-micron
Class precision realizes the manufacture of nano-precision, to reduce the production time, lower production cost.Meanwhile reconstruction-equivalent chirp
The manufacturing process of technology and conventional photographic exposure technology are completely compatible, in manufacturing cost there is electron beam lithography can not compare
Quasi- advantage disclosure satisfy that requirement of the future communication systems to low cost.
It should also be noted that, the terms "include", "comprise" or its any other variant are intended to nonexcludability
Including so that process, method, commodity or equipment including a series of elements include not only those elements, but also wrap
Include other elements that are not explicitly listed, or further include for this process, method, commodity or equipment intrinsic want
Element.In the absence of more restrictions, the element limited by sentence "including a ...", it is not excluded that wanted including described
There is also other identical elements in the process of element, method, commodity or equipment.
Above is only an example of the present application, it is not intended to limit this application.For those skilled in the art
For, the application can have various modifications and variations.It is all within spirit herein and principle made by any modification, equivalent
Replace, improve etc., it should be included within the scope of claims hereof.
Claims (9)
1. a kind of chirp microwave pulse generator, including front end laser, rear end laser, phase region, single mode optical fiber, photoelectricity turn
Parallel operation, radio-frequency cable, which is characterized in that
The front end laser, phase region, rear end laser integrate on the same chip successively, the front end laser and described
It is the first electricity isolated region between phase region, is the second electricity isolated region between the phase region and the rear end laser；
The front end laser is different with the operation wavelength of the rear end laser；
The drive signal of the front end laser or the rear end laser is periodic serrations wave electric signal or class sawtooth wave electricity
Signal；
The output light of the rear end laser is drawn by the single mode optical fiber, and microwave is converted to using the photoelectric converter
Signal, the used radio-frequency cable output.
2. chirp microwave pulse generator as described in claim 1, which is characterized in that the front end laser and the rear end are swashed
Light device is the Distributed Feedback Laser made of reconstruction-equivalent chirp technology.
3. chirp microwave pulse generator as described in claim 1, which is characterized in that the front end laser, phase region, rear end
Laser shares same ridge waveguide structure.
4. chirp microwave pulse generator as described in claim 1, which is characterized in that
The front end laser, phase region, rear end laser material epitaxy structure having the same；
The material epitaxy structure includes n-type substrate, N-type buffer layer, ducting layer, strained multiple-quantum-well layer, grating material layer, p
Type ducting layer, p-type limiting layer, p-type ohmic contact layer, insulating layer and positive and negative electrode；
The unglazed grid structure of grating material layer of the phase region.
5. chirp microwave pulse generator as claimed in claim 3, which is characterized in that
First electricity isolated region, the second electricity isolated region, front end laser, phase region, rear end laser share same ridge waveguide
Structure；
First electricity isolated region and second electricity isolated region are to etch away optical grating construction and Ohmic contact using photoetching technique
Layer is made.
6. chirp microwave pulse generator as claimed in any one of claims 1 to 5, wherein, which is characterized in that
Material used by the front end laser, phase region, rear end laser is III-V compound semiconductor material, II-
VI group iii v compound semiconductor materials, group IV-VI compound semiconductor materials at least one of mix aluminum semiconductor material.
7. chirp microwave pulse generator as claimed in any one of claims 1 to 5, wherein, it is characterised in that
The length of first electricity isolated region and second electricity isolated region is in 30~80 μ ms.
8. chirp microwave pulse generator as claimed in any one of claims 1 to 5, wherein, it is characterised in that
The wavelength interval of the front end laser and the rear end laser<0.5nm.
9. a kind of chirp microwave pulse production method is used for claim 1~8 any one described device, which is characterized in that packet
Containing following steps
The bias current for adjusting the front end laser and/or the rear end laser changes the front end laser and described
Wavelength interval between the laser of rear end makes described device be operated in monocycle oscillatory regime；
The intensity for changing the sawtooth wave or the class sawtooth wave, under monocycle oscillatory regime, make the front end laser and
Off-resonance frequency between the rear end laser periodically increasing or decreasing.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810224136.9A CN108598845B (en) | 2018-03-19 | 2018-03-19 | Chirp microwave pulse generation method and device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810224136.9A CN108598845B (en) | 2018-03-19 | 2018-03-19 | Chirp microwave pulse generation method and device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN108598845A true CN108598845A (en) | 2018-09-28 |
| CN108598845B CN108598845B (en) | 2019-05-28 |
Family
ID=63626823
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201810224136.9A Active CN108598845B (en) | 2018-03-19 | 2018-03-19 | Chirp microwave pulse generation method and device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN108598845B (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110299589A (en) * | 2019-06-04 | 2019-10-01 | 中国人民解放军陆军工程大学 | Frequency division and frequency multiplication generation method and device |
| CN110444995A (en) * | 2019-07-10 | 2019-11-12 | 太原理工大学 | A kind of integreted phontonics tunable photo microwave chip |
| CN110737089A (en) * | 2019-09-09 | 2020-01-31 | 华南师范大学 | method and system for generating chirped Airy vortex electronic plasma wave |
| CN111490438A (en) * | 2019-01-25 | 2020-08-04 | 中国人民解放军陆军工程大学 | Tunable microwave signal generation system and method |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5502741A (en) * | 1994-03-22 | 1996-03-26 | Northern Telecom Limited | Direct amplitude modulation of lasers |
| CN102882127A (en) * | 2012-09-19 | 2013-01-16 | 大连理工大学 | Photoinjection-type chaotic photonic integration device and preparation method thereof |
| CN104124611A (en) * | 2014-05-09 | 2014-10-29 | 南京大学 | Monolithic integration injection locking DFB laser based on reconstruction-equivalent chirp and array and manufacturing method thereof |
| CN104377544A (en) * | 2014-11-28 | 2015-02-25 | 中国科学院半导体研究所 | Monolithic integrated laser chip based on amplification feedback to realize straight-strip bandwidth expansion |
| CN106067650A (en) * | 2016-07-15 | 2016-11-02 | 中国科学院半导体研究所 | Based on the microwave generator of warbling amplifying feedback laser |
-
2018
- 2018-03-19 CN CN201810224136.9A patent/CN108598845B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5502741A (en) * | 1994-03-22 | 1996-03-26 | Northern Telecom Limited | Direct amplitude modulation of lasers |
| CN102882127A (en) * | 2012-09-19 | 2013-01-16 | 大连理工大学 | Photoinjection-type chaotic photonic integration device and preparation method thereof |
| CN104124611A (en) * | 2014-05-09 | 2014-10-29 | 南京大学 | Monolithic integration injection locking DFB laser based on reconstruction-equivalent chirp and array and manufacturing method thereof |
| CN104377544A (en) * | 2014-11-28 | 2015-02-25 | 中国科学院半导体研究所 | Monolithic integrated laser chip based on amplification feedback to realize straight-strip bandwidth expansion |
| CN106067650A (en) * | 2016-07-15 | 2016-11-02 | 中国科学院半导体研究所 | Based on the microwave generator of warbling amplifying feedback laser |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111490438A (en) * | 2019-01-25 | 2020-08-04 | 中国人民解放军陆军工程大学 | Tunable microwave signal generation system and method |
| CN111490438B (en) * | 2019-01-25 | 2021-05-07 | 中国人民解放军陆军工程大学 | Tunable microwave signal generation system and method |
| CN110299589A (en) * | 2019-06-04 | 2019-10-01 | 中国人民解放军陆军工程大学 | Frequency division and frequency multiplication generation method and device |
| CN110299589B (en) * | 2019-06-04 | 2021-11-09 | 中国人民解放军陆军工程大学 | Frequency division and frequency multiplication generation method and device |
| CN110444995A (en) * | 2019-07-10 | 2019-11-12 | 太原理工大学 | A kind of integreted phontonics tunable photo microwave chip |
| CN110737089A (en) * | 2019-09-09 | 2020-01-31 | 华南师范大学 | method and system for generating chirped Airy vortex electronic plasma wave |
| CN110737089B (en) * | 2019-09-09 | 2021-08-20 | 华南师范大学 | Method and system for generating chirped airy vortex electronic plasma wave |
Also Published As
| Publication number | Publication date |
|---|---|
| CN108598845B (en) | 2019-05-28 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN108598845B (en) | Chirp microwave pulse generation method and device | |
| US7043097B2 (en) | Traveling-wave optoelectronic wavelength converter | |
| US9528875B2 (en) | Optical frequency tracking and stabilization based on extra-cavity frequency | |
| CN105048282B (en) | Single-chip integration electric pump Bragg reflection waveguide thz laser device | |
| Srinivasan et al. | Harmonically mode-locked hybrid silicon laser with intra-cavity filter to suppress supermode noise | |
| CN108471046B (en) | Semiconductor laser and control method | |
| CN108649426A (en) | A kind of laser | |
| Liu et al. | Latest advances in high-performance light sources and optical amplifiers on silicon | |
| CN105428998A (en) | External cavity narrow linewidth laser device | |
| Yuan et al. | Dual-wavelength DFB laser array based on sidewall grating and lateral modulation of the grating coupling coefficient | |
| Hou et al. | 1.55-μm AlGaInAs/InP Sampled Grating Laser Diodes for Mode Locking at Terahertz Frequencies | |
| CN104765217A (en) | Tunable light-frequency comb based on dual-mode square micro-cavity laser | |
| Hou et al. | Monolithic 45-GHz mode-locked surface-etched DBR laser using quantum-well intermixing technology | |
| CN105811242A (en) | Periodic metal contact gain-coupled distributed feedback semiconductor laser device | |
| RU2540233C1 (en) | Injection laser having multiwave modulated emission | |
| CN110299589B (en) | Frequency division and frequency multiplication generation method and device | |
| US20090279165A1 (en) | Three-terminal optical signal amplifying device | |
| Fisher et al. | Tunable optical group delay in an active waveguide semiconductor resonator | |
| JPH04133487A (en) | Apparatus with optical pulse generation means | |
| Zah et al. | High speed performance of 1.5 μm compressive-strained multiquantum-well gain-coupled distributed-feedback lasers | |
| Sun et al. | Reconfigurable microwave photonic filter enabled by a quantum dash mode-locked laser | |
| Zeng et al. | Controlled phase compensation in HR-AR-coated DFB laser with sampled Bragg grating | |
| CN112928599B (en) | Single-chip integrated mode-tunable chaotic laser and manufacturing and control method thereof | |
| CN102829866A (en) | Measurement system for passive spectrum of distribution feedback type optical fiber laser | |
| JP2006140425A (en) | Laser and its control method |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |