CN110299466A - A kind of substrate and stripping means - Google Patents
A kind of substrate and stripping means Download PDFInfo
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- CN110299466A CN110299466A CN201910521426.4A CN201910521426A CN110299466A CN 110299466 A CN110299466 A CN 110299466A CN 201910521426 A CN201910521426 A CN 201910521426A CN 110299466 A CN110299466 A CN 110299466A
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- substrate
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/84—Passivation; Containers; Encapsulations
- H10K50/841—Self-supporting sealing arrangements
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/80—Manufacture or treatment specially adapted for the organic devices covered by this subclass using temporary substrates
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K77/00—Constructional details of devices covered by this subclass and not covered by groups H10K10/80, H10K30/80, H10K50/80 or H10K59/80
- H10K77/10—Substrates, e.g. flexible substrates
- H10K77/111—Flexible substrates
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The present invention provides the preparation methods of a kind of substrate, flexible el device.The substrate includes first surface and the second surface opposite with first surface, first surface is equipped with multiple first openings, second surface is equipped with multiple second openings, first surface is for carrying film layer, multiple first openings correspond with multiple second openings and run through substrate and be connected to form multiple ducts, the surface of first surface can and film layer surface can be respectively less than duct inner surface surface can, and the surface of film layer can and first surface surface can deviation within ± 10%.By changing the surface property of substrate surface and substrate inner surfaces of pores, the quick removing of flexible device and substrate is realized, charge stripping efficiency is improved.The active force that sacrificial layer material is in contact with substrate interface is destroyed by etching medium simultaneously, device can be separated in the case where not generating mechanical damage to device with substrate, complete the removing and preparation of flexible device, improve flexible device prepares yield.
Description
Technical field
The present invention relates to field of display technology more particularly to the preparation methods of a kind of substrate, flexible el device.
Background technique
The appearance of wearable electronic is lived to people and perception brings great transformation, mainly due to wearable electronic
Equipment can bring user compared to conventional electronic devices and more perfectly experience.Meanwhile wearable electronic is wearable
Property require related electronic devices have good flexibility.Therefore, the preparation research in relation to flexible device is concerned in recent years.
The preparation process of general flexible device mainly includes following steps: flexible material being first produced on rigid substrates
On, form flexbile base；Continue to make electroluminescent device or other functional layers and encapsulate on flexbile base surface again；Finally will
Electroluminescent device is removed from substrate, obtains flexible el device.Currently, the most widely used stripping means is to adopt
Substrate and device are separated with laser, and substrate used thereof is conventional base plate.But due to base material during the preparation process with
Substrates into intimate fitting, therefore a large amount of heat can be generated in stripping process, device is caused to damage, thereby reduce preparation process
The yield of middle device.Meanwhile laser lift-off equipment is not only at high price, but also the limitation of this stripping means itself also limits
The problem of effective promotion of charge stripping efficiency, conventional base plate can not be effectively improved stripping process.
Summary of the invention
For overcome the deficiencies in the prior art, the purpose of the present invention is to provide a kind of substrates, reusable, and can
Realize the summary of stripping process.
It is another object of the present invention to provide a kind of preparation methods of flexible el device, with prior art phase
It is more easy to operate than this method, while yield of devices can be promoted, reduce the cost in stripping process.
According to an aspect of the present invention, a kind of substrate is provided, including first surface and opposite with first surface second
Surface, first surface are equipped with multiple first openings, and second surface is equipped with multiple second openings, and first surface is used to carry film layer,
Multiple first openings correspond with multiple second openings and run through substrate and be connected to form multiple ducts, the surface of first surface
The surface of energy and film layer can be respectively less than the surface energy of the inner surface in duct, and the surface of film layer can be with the surface of the first surface
Energy deviation is within ± 10%.
Preferably, first surface and second surface are parallel.
Optionally, first surface is hydrophobic surface, and the inner surface in duct is water-wetted surface.
Further, the surface of first surface can be less than or equal to 40mN/m.
Further, the shape of the first opening and the second opening is symmetric figure, the figure of the first opening and the second opening
The geometric center of shape to figure exterior contour distance be 0.1 μm~5mm.
Further, axial symmetry is divided over the first and second surface respectively for multiple first openings and multiple second openings
Cloth, and the first opening and the second opening correspond on gravity direction, the first opening and the second opening are respectively in first surface
1~500/square centimeter is distributed as on second surface.
Further, template material is one of silicon wafer, quartz, glass, template thickness 0.1-1mm.
According to another aspect of the present invention, a kind of preparation method of flexible el device, including following step are provided
It is rapid:
S1 prepares a substrate, sacrificial layer material is arranged on the first surface of the substrate and in duct, so that described first
Sacrificial layer is formed on surface and in the duct, the surface energy of first surface and the surface of sacrificial layer can be respectively less than the interior table in duct
The surface in face can, and the surface of sacrificial layer can and first surface surface can deviation within ± 10%, sacrificial layer and the first table
The affinity in face is less than the affinity of sacrificial layer and duct；
Flexible material is arranged in S2 in sacrificial layer surface, forms flexible substrate layer, and continuation is set in flexible base board layer surface
It sets electroluminescent device and encapsulates, form flexible el device；
S3 contacts etching medium with the second surface of substrate, and etching medium is corroded sacrificial in duct by the second opening
Domestic animal layer material separates flexible el device with substrate, obtains flexible el device.
Further, in above-mentioned steps S1, sacrificial layer material is selected from macromolecule resin, metal oxide, nonmetallic oxidation
One of object, organic-inorganic hybrid material are a variety of.
Further, in above-mentioned steps S1, sacrificial layer thickness is 0.5~100 μm, it is preferable that sacrificial layer preparation method is
One of spin coating, blade coating, chemical vapor deposition, physical vapour deposition (PVD).
Further, in above-mentioned steps S2, flexible material is selected from polyimides, polyethylene naphthalate, gathers to benzene
One of naphthalate, polycarbonate, cyclic olefine copolymer, polyether sulfone, polyacrylate, polyether-ether-ketone are more
Kind.
Further, in above-mentioned steps S3, etching medium is one of liquid medium, gas medium, plasma.
Compared with prior art, pass through etching medium the beneficial effects of the present invention are: the present invention and destroy sacrificial layer and channel
Interface between sacrificial layer and first surface, can be in the case where not generating mechanical damage to device by device and substrate point
From completing the removing and preparation of flexible device, improve the yield of devices in preparation process.Due to substrate first surface and duct
The surface energy differential of inner surface is different, reduces removing difficulty, improves the charge stripping efficiency in preparation process.Complete preparation process
Afterwards, cleaning can be carried out to substrate and realizes the reusable of substrate, reduce preparation cost.In addition, operating process is simple, controllability
By force, it is advantageously implemented scale.
Detailed description of the invention
The accompanying drawings constituting a part of this application is used to provide further understanding of the present invention, and of the invention shows
Examples and descriptions thereof are used to explain the present invention for meaning property, does not constitute improper limitations of the present invention.In the accompanying drawings:
Fig. 1 is shown shows the top view of substrate according to an embodiment of the present；
Fig. 2 shows show the sectional view of substrate according to an embodiment of the present；
Fig. 3 shows the section shown after sacrificial layer is arranged in substrate first surface according to an embodiment of the present
Figure；
Fig. 4 shows to show according to an embodiment of the present and set in substrate first surface completion electroluminescent device
The structural front view postponed；
Fig. 5 is shown shows flexible el device architecture main view according to an embodiment of the present；
In figure: 10, substrate；101, duct；102a, the first opening；102b, the second opening；103a, first surface；103b,
Second surface；20, sacrificial layer；30, flexible substrate layer；40, electroluminescent device.
Specific embodiment
In the following, being described further in conjunction with specific embodiment to the present invention, it should be noted that is do not collided
Under the premise of, new embodiment can be formed between various embodiments described below or between each technical characteristic in any combination.
It should be noted that the term " first ", " second " etc. in specification and claims in the application are to use
In distinguishing similar object, without being used to describe a particular order or precedence order.It should be understood that the data used in this way exist
It can be interchanged in appropriate situation, so as to embodiments herein described herein.In addition, term " includes " and " having " and he
Any deformation, it is intended that cover it is non-exclusive include, for example, contain the process, method of a series of steps or units,
System, product or equipment those of are not necessarily limited to be clearly listed step or unit, but may include being not clearly listed
Or the other step or units intrinsic for these process, methods, product or equipment.
As depicted in figs. 1 and 2, the present invention provides a kind of substrate 10, including first surface 103a and with first surface 103a
Opposite second surface 103b, first surface 103a are equipped with multiple first opening 102a, second surface 103b and are equipped with multiple second
Be open 102b, and first surface 103a is corresponded for carrying film layer, multiple first opening 102a and multiple second opening 102b
And be connected to through substrate 10 and form multiple ducts 101, the surface of first surface 103a can be less than the table of the inner surface in duct 101
Face energy.The surface of first surface 103a can and film layer surface can be respectively less than duct 101 inner surface surface can, and film layer
Surface can and first surface 103a surface can deviation within ± 10%.
In the preparation of the application substrate 10 progress flexible device, first surface 103a is reduced by surface treatment means
Surface can or increase by 101 inner surface of duct surface can, i.e., the surface of first surface 103a can be less than duct 101 interior table
The surface energy in face, to reduce the affinity of film layer (such as: sacrificial layer 20) and first surface 103a, or increases in duct 101
The affinity of film layer (sacrificial layer 20) and 101 inner surface of duct works as film layer in subsequent electroluminescent device stripping process
After the active force of (sacrificial layer 20) and 101 inner surface of duct is destroyed, film layer (sacrificial layer 20) then can be separated quickly with substrate 10,
To improve charge stripping efficiency.
Above-mentioned surface treatment means are not particularly limited in the present invention, using surface well known to those skilled in the art
Processing means.
In a kind of preferred embodiment, the first surface 103a of aforesaid substrate 10 is parallel with second surface 103b.
In a kind of preferred embodiment, the surface energy of first surface 103a and the surface of film layer can be respectively less than duct 101
Inner surface surface can 15% or more.
In some embodiments, first surface 103a is hydrophobic surface, and the inner surface in duct 101 is water-wetted surface.It is hydrophilic
Surface refers to the surface of the solid material formed by the molecule with polar group, is easily soaked by water.And have this easy
It is all the hydrophily of substance by the characteristic that water parent is moistened.Hydrophobicity refers to that a molecule (hydrophobe) and water phase are arranged in chemistry
The physical property of reprimand, hydrophobic surface refer to by the table of this solid material formed with the mutually exclusive physical property of water molecule
Face.For example, soaking larger area, for contact angle less than 90 degree, then it is hydrophilic for claiming surface if drop (water) diffusion.Such as
One sphere of fruit droplet formation hardly touches surface, and liquid-drop contact angle is greater than 90 degree, and surface claims to be hydrophobic, or hates
Water.
In some embodiments, the inner surface in duct 101 has roughness and is greater than the roughness of first surface 103a.
In some embodiments, when first surface 103a is hydrophobic surface, and the inner surface in duct 101 is water-wetted surface,
Sacrificial layer material has hydrophily, is conducive to the charge stripping efficiency that sacrificial layer 20 and substrate 10 are improved in subsequent stripping process.
In a kind of preferred embodiment, the surface of the first surface 103a of aforesaid substrate 10 can be less than or equal to 40mN/m.
In some embodiments, the shape of the first opening 102a and the second opening 102b are symmetric figure, the first opening
102a and second opening 102b figure geometric center to figure exterior contour distance be 0.1 μm~5mm.
In some embodiments, the shape of single first opening 102a and single second opening 102b can be set to triangle
Shape, round, rectangular etc., multiple first opening 102a can be consistent or different with multiple second opening 102b shape and size
It causes.
In some embodiments, multiple first opening 102a and multiple second opening 102b respectively in first surface 103a and
It is symmetrical on second surface 103b, and in the geometry of the geometric center of the first opening 102a figure and the second opening 102b figure
The heart corresponds, the first opening 102a and the second opening 102b distribution on first surface 103a and second surface 103b respectively
For 1~500/square centimeter.Distribution density properly increases, on the one hand, can reinforce the knot of sacrificial layer and substrate in early period
With joint efforts, it on the other hand can increase the contact velocity of etching medium and the second opening 102b in the later period, improve charge stripping efficiency.
It is noted that multiple first opening 102a and multiple second opening 102b are respectively in first surface 103a and the
It is symmetrical on two surface 103b to be conducive to make sacrificial layer in 10 surface uniform force of substrate, therefore symmetrical point of the present invention
Symmetry axis in cloth refers to the central symmetry axis of 10 figure of substrate, and the multipair first opening 102a of first surface 103a is one a pair of
The multipair second opening 102b of the zhou duicheng tuxing answered, second surface 103b is one-to-one zhou duicheng tuxing.
In addition, being respectively distributed to one-to-one first opening 102a and the on first surface 103a and second surface 103b
Two opening 102b sizes can be consistent or inconsistent.
It is noted that being conducive to sacrificial when one-to-one first opening 102a size is greater than the second opening 102b
The Fast Filling of domestic animal layer material；When one-to-one first opening 102a size is less than the second opening 102b, be conducive to increase
The contact area of sacrificial layer 20 and etching medium；When one-to-one first opening 102a size is equal to the second opening 102b,
Be conducive to the preparation of substrate 10.
In some embodiments, 10 material of substrate is one of silicon wafer, quartz, glass, and substrate thickness is 0.1~1mm.
Material is also possible to other hard materials.
In some embodiments, substrate 10 is used to prepare bearing substrate used in flexible device pilot process.Flexible device
Including but not limited to flexible el device.
According to another aspect of the present invention, a kind of preparation method of flexible el device, including following step are provided
It is rapid:
S1 prepares a substrate 10, sacrificial layer material is arranged on the first surface 103a of substrate 10 and in duct 101, makes
It obtains and forms sacrificial layer 20 on first surface 103a and in the duct 101, cross-section structure is as shown in figure 3, first surface
The surface energy of 103a and the surface of sacrificial layer 20 can be respectively less than the surface energy of the inner surface in duct 101, and the surface of sacrificial layer 20
Can and first surface 103a surface can deviation within ± 10%, sacrificial layer material and the affinity of first surface 103a are less than
The affinity of sacrificial layer material and duct 101, wherein aforesaid substrate 10 is substrate provided in any embodiment of the present invention
10；Flexible material is arranged in S2 on 20 surface of sacrificial layer, forms flexible substrate layer 30, continues on 30 surface of flexible substrate layer
Setting electroluminescent device 40 simultaneously encapsulates, and obtains structure shown in Fig. 4；
S3 contacts etching medium with the second surface 103b of substrate 10, and etching medium is corroded by the second opening 102b
Sacrificial layer material in duct 101 separates flexible el device with substrate 10, obtains flexible el device,
Structure is as shown in Figure 5.
The present invention destroys sacrificial layer 20 and 101 inner surface of duct and sacrificial layer 20 and first surface 103a by etching medium
Between interface, then can be in the case where not generating mechanical damage to device by the film layer point on flexible device and substrate 10
From completing the removing and preparation of flexible device, improve the flexible device yield in preparation process.Simultaneously because sacrificial layer material
It is less than the affinity of sacrificial layer material and duct 101 with the affinity of first surface 103a, when sacrificial layer material and duct 101
After affinity is destroyed, sacrificial layer then can be separated quickly with substrate 10, to reduce removing difficulty, be improved in preparation process
Charge stripping efficiency.After completing preparation process, cleaning can be carried out to substrate 10 and realizes the reusable of substrate 10, reduces preparation
Cost.In addition, inventor is designed by the size and distribution of opening and duct 101 to substrate 10, make system of the invention
Preparation Method will not influence the planarization of flexible material coating.
It is noted that whether being stuffed entirely in duct 101 completely, without limitation.Loading in duct is with can
Maintaining the sacrificial layer of first surface that recess does not occur at the first opening 102a in processing procedure is critical value, it is preferable that in duct 101
It does not fill up, thus the removing in more conducively sacrificial layer later period.
In some embodiments, in above-mentioned steps S1, sacrificial layer material is selected from macromolecule resin, metal oxide, non-gold
Belong to one of oxide, organic-inorganic hybrid material or a variety of.Macromolecule resin can be, but not limited to, photo curable
Resin, such as photoresist.It is sub- that organic-inorganic hybrid material can be, but not limited to, epoxy resin silica composite, polyamides
Amine titanium dioxide compound etc..
In some embodiments, in above-mentioned steps S1, sacrificial layer thickness is 0.5~100 μm.What the thickness of sacrificial layer only referred to
It is the thickness on first surface 103a, does not include the thickness in duct.
In some embodiments, sacrificial layer preparation method is spin coating, in blade coating, chemical vapor deposition, physical vapour deposition (PVD)
One kind.
In some embodiments, in above-mentioned steps S2, flexible material be selected from polyimides, polyethylene naphthalate,
One of polyethylene terephthalate, polycarbonate, cyclic olefine copolymer, polyether sulfone, polyacrylate, polyether-ether-ketone
Or it is a variety of.
In some embodiments, in above-mentioned steps S3, etching medium is liquid medium, in gas medium, plasma
It is a kind of.Liquid medium can be, but not limited to, acid developer, alkaline-based developer, alcohol ether solvents etc..Gas medium can be
But be not limited to carbon tetrafluoride, perfluoroethane etc..
Embodiment
Embodiment 1
(1) substrate specification selects: having a size of 200*200*0.7mm, the surface of first surface can be 28mN/m, the first opening
It is circle with the second opening, round radius is 250 μm, and the first opening and the second opening are respectively in first surface and second surface
The distribution of upper axial symmetry, distribution density are 100/square centimeter, the geometric center line of the first opening and the second opening figure with
First surface is vertical.
(2) sacrificial layer makes: the zinc oxide (ZnO) for being coated with 15wt% on aforesaid substrate with slot coated equipment is nanocrystalline
Solution, the size of ZnO nano crystalline substance are 8nm, and solvent is amylalcohol, and solution surface tension 35mN/m measures it first after dry
On surface with a thickness of 300nm.
(3) flexible substrate layer makes: being coated with polyimides (PI) solution using slot coated equipment, solvent is dimethyl second
Amide, measured after dry its on sacrificial layer with a thickness of 20 μm of PI film.
(4) element manufacturing: on PI film using chemical vapour deposition technique successively make with a thickness of 50nm silicon nitride layer,
150nm tin indium oxide (ITO) layer, 40nm Polyglycolic acid fibre-poly- (styrene sulfonate) (PEDOT:PSS) layer, 25nm are poly-
(9,9- dioctyl fluorene-CO-N- (4- butyl phenyl) diphenylamines) (TFB) layer, 40nm blue quantum dot (BQD), 50nm ZnO layer,
100nm silver (Ag) layer.Inorganic organic four groups are set gradually using atomic layer deposition method (ALD) and inkjet printing technology to stack to obtain
Encapsulating film, wherein using aluminum oxide (Al2O3) layer of ALD production with a thickness of 50nm, inkjet printing is simultaneously obtained after solidifying
Polymer film thickness is 400nm, after encapsulating film top layer coating thickness is polyester (PET) transparent membrane of 250um, is completed
Quanta point electroluminescent device production.
(5) device is removed: applying attack solution on the second surface of substrate, attack solution is made successively to contact the of substrate
Two surfaces, duct and first surface, attack solution are made of acetic acid, ethyl alcohol and propylene glycol monomethyl ether, and the volume ratio of each component is 2:
It can be observed occur segregation phenomenon between substrate and flexible base board after 48:50,5min, continue to extend the processing time to sacrificial layer
All removals, then complete the removing of device.Then with a thickness of the PET film of 250um in exposed PI film side fitting, then
To flexible el device.
Embodiment 2
(1) substrate specification selects: having a size of 200*200*0.7mm, the surface of first surface can be 28mN/m, the first opening
It is circle with the second opening, round radius is 100 μm, and the first opening and the second opening are respectively in first surface and second surface
The distribution of upper axial symmetry, distribution density are 500/square centimeter, the geometric center line of the first opening and the second opening figure with
First surface is vertical.
(2) layer manufacturing method thereof is sacrificed with (2) the step of embodiment 1.
(3) flexible base board layer manufacturing method thereof is the same as (3) the step of embodiment 1.
(4) device manufacture method is the same as (4) the step of embodiment 1.
(5) device stripping means is the same as (5) the step of embodiment 1.
Embodiment 3
(1) substrate specification selects: having a size of 200*200*0.7mm, the surface of first surface can be 28mN/m, the first opening
It is circle with the second opening, round radius is 2mm, and the first opening and the second opening difference is over the first and second surface
Axial symmetry distribution, distribution density are 4/square centimeter, the geometric center line of the first opening and the second opening figure and first
Surface is vertical.
(2) layer manufacturing method thereof is sacrificed with (2) the step of embodiment 1.
(3) flexible base board layer manufacturing method thereof is the same as (3) the step of embodiment 1.
(4) device manufacture method is the same as (4) the step of embodiment 1.
(5) device stripping means is the same as (5) the step of embodiment 1.
Embodiment 4
(1) substrate specification selects: having a size of 200*200*0.7mm, the surface of first surface can be 28mN/m, the first opening
With second opening be square, first opening side length be 200 μm, second opening side length be 100 μm, first opening and
Axial symmetry is distributed second opening over the first and second surface respectively, and distribution density is 200/square centimeter, and first opens
Mouth and the geometric center line of the second opening figure are vertical with first surface.
(2) layer manufacturing method thereof is sacrificed with (2) the step of embodiment 1.
(3) flexible base board layer manufacturing method thereof is the same as (3) the step of embodiment 1.
(4) device manufacture method is the same as (4) the step of embodiment 1.
(5) device stripping means is the same as (5) the step of embodiment 1.
Embodiment 5
(1) substrate specification selects: having a size of 200*200*0.7mm, the surface of first surface can be 28mN/m, the first opening
It is square with the second opening, the side length of the first opening and the second opening is 200 μm, the first opening and the second opening difference
Axial symmetry is distributed over the first and second surface, and in the central area of 100*100mm, opening is distributed as 400/square
Centimetre, peripheral region opening is distributed as 100/square centimeter, the geometric center line of the first opening and the second opening figure
It is vertical with first surface.
(2) layer manufacturing method thereof is sacrificed with (2) the step of embodiment 1.
(3) flexible base board layer manufacturing method thereof is the same as (3) the step of embodiment 1.
(4) device manufacture method is the same as (4) the step of embodiment 1.
(5) device stripping means is the same as (5) the step of embodiment 1.
Comparative example 1
(1) substrate specification of the substrate specification with embodiment 1.
(2) layer manufacturing method thereof is sacrificed with (2) the step of embodiment 1.
(3) flexible base board layer manufacturing method thereof is the same as (3) the step of embodiment 1.
(4) device manufacture method is the same as (4) the step of embodiment 1.
Performance test:
The device efficient lighting area for choosing the various embodiments described above and comparative example 1 is 150*150mm, utilizes Photo
The PR670 of Research carries out photoelectric properties test, tests the external quantum efficiency (EQE) of device center, and by light-emitting surface
Product is divided into 9 parts (brill cd/m2), and tests the bright of every part of center under the conditions of current density is 2mA/cm2
Degree, assesses its uniformity of luminance, test result is as follows shown in table:
| Number | Embodiment 1 | Embodiment 2 | Embodiment 3 | Embodiment 4 | Embodiment 5 | Comparative example 1 |
| EQE% | 6.48 | 6.51 | 6.55 | 6.47 | 6.5 | 6.52 |
| Brightness 1 | 133.2 | 131.8 | 131.2 | 128.7 | 130.3 | 132.5 |
| Brightness 2 | 129.8 | 128.6 | 127.9 | 133.0 | 128.6 | 133.1 |
| Brightness 3 | 131.7 | 132.7 | 132.6 | 130.3 | 128.7 | 129.5 |
| Brightness 4 | 128.9 | 128.8 | 130.3 | 128.8 | 129.2 | 128.2 |
| Brightness 5 | 129.7 | 131.8 | 129.2 | 130.4 | 130.6 | 129.9 |
| Brightness 6 | 132.8 | 128.6 | 127.9 | 130.2 | 131.8 | 130.5 |
| Brightness 7 | 126.9 | 132.7 | 130.4 | 127.2 | 130.3 | 127.8 |
| Brightness 8 | 130.5 | 128.8 | 132.9 | 129.8 | 132.3 | 131.2 |
| Brightness 9 | 127.8 | 130.8 | 131.7 | 128.1 | 129.2 | 128.1 |
| Average brightness | 130.1 | 130.5 | 130.4 | 129.6 | 130.1 | 130.1 |
As can be seen from the above table, using in the present invention substrate and the obtained QLED (Examples 1 to 5) of stripping means imitating
In rate and brightness uniformity all with unstripped device (comparative example 1) basic indifference, because of relative ease and mild removing
Mode does not damage device, mainly due to the surface energy differential of substrate first surface and duct it is different caused by.Using the present invention
In substrate, due to substrate first surface surface can and film layer surface can be respectively less than inner surfaces of pores surface can, this
In inventive embodiments 1~5, zinc oxide nanocrystalline is weaker in first surface adhesive force, but since zinc oxide nanocrystalline penetrates into hole
Good adhesion strength is formed in road and with through-hole inner surface, therefore after zinc oxide film (sacrificial layer) completes, zinc oxide film
Overall adhesion on substrate is preferable, and size and distribution by must rationally design the first opening and the second opening, and
The planarization of film layer coating is not influenced, while in entire processing procedure, not observing the phenomenon that film layer falls off.It was removed in device
Cheng Zhong, attack solution enter from the second opening, after attack solution dissolves the sacrificial layer material in duct, in addition zinc oxide nano
Meter Jing is weaker in first surface adhesive force, and device is then easy to remove from substrate, continues to extend the processing time, then can will remain
Zinc oxide film all remove.To sum up reason, using substrate and stripping means of the invention, the flexible device being finally prepared
It is possible to prevente effectively from conventional stripping methods to the mechanical damage situation of device, shorten the work of device and etching medium to be stripped
With the time, to improve charge stripping efficiency and flexible device yield.
The above embodiment is only the preferred embodiment of the present invention, and the scope of protection of the present invention is not limited thereto,
The variation and replacement for any unsubstantiality that those skilled in the art is done on the basis of the present invention belong to institute of the present invention
Claimed range.
Claims (10)
1. a kind of substrate, which is characterized in that including first surface and the second surface opposite with the first surface, described first
Surface is equipped with multiple first openings, and the second surface is equipped with multiple second openings, and the first surface is for carrying film layer, institute
Multiple first openings are stated to correspond with the multiple second opening and be connected to form multiple ducts through the substrate, it is described
The surface of first surface can and the film layer surface can be respectively less than the duct inner surface surface can, and the film layer
Surface can and the first surface surface can deviation within ± 10%.
2. substrate according to claim 1, which is characterized in that the first surface be hydrophobic surface, the duct it is interior
Surface is water-wetted surface.
3. substrate according to claim 1, which is characterized in that the surface of the first surface can be less than or equal to 40mN/m.
4. substrate according to claim 1, which is characterized in that described first is open is with the shape of second opening
The distance of exterior contour of the geometric center of the figure of symmetric figure, first opening and second opening to the figure
For 0.1 μm~5mm.
5. substrate according to claim 1, which is characterized in that the multiple first opening and the multiple second opening point
It is not symmetrical on the first surface and the second surface, and the geometric center of first opening figure and described
The geometric center of two opening figures corresponds, and first opening and second opening are respectively in the first surface and institute
It states and is distributed as 1~500/square centimeter on second surface.
6. a kind of preparation method of flexible el device, which comprises the following steps:
S1, prepares a substrate, and the substrate is the described in any item substrates of Claims 1 to 5；Described the first of the substrate
Sacrificial layer material is set on surface and in the duct, so that sacrificial layer is formed on the first surface and in the duct,
The surface energy of the first surface and the surface of the sacrificial layer can be respectively less than the surface energy of the inner surface in the duct, and described
The surface of sacrificial layer can and the first surface surface can deviation within ± 10%, the sacrificial layer and the first surface
Affinity be less than the sacrificial layer and the duct affinity；
Flexible material is arranged in S2 in the sacrificial layer surface, forms flexible substrate layer, continues in the flexible base board layer surface
Upper setting electroluminescent device simultaneously encapsulates, and forms flexible el device；
S3 contacts etching medium with the second surface of the substrate, and the etching medium is invaded by second opening
The sacrificial layer material in the duct is lost, separates the flexible el device with the substrate, is obtained described soft
Property electroluminescent device.
7. the preparation method of flexible el device according to claim 6, which is characterized in that the sacrificial layer material
Selected from one of macromolecule resin, metal oxide, nonmetal oxide, organic-inorganic hybrid material or a variety of.
8. the preparation method of flexible el device according to claim 6, which is characterized in that the sacrificial layer thickness
It is 0.5~100 μm, it is preferable that the sacrificial layer preparation method is spin coating, in blade coating, chemical vapor deposition, physical vapour deposition (PVD)
One kind.
9. the preparation method of flexible el device according to claim 6, which is characterized in that in the step S2,
The flexible material is selected from polyimides, polyethylene naphthalate, polyethylene terephthalate, polycarbonate, ring
One of olefin copolymer, polyether sulfone, polyacrylate, polyether-ether-ketone are a variety of.
10. the preparation method of flexible el device according to claim 6, which is characterized in that in the step S3, institute
Stating etching medium is one of liquid medium, gas medium, plasma.
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